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JPH0722117B2 - Charged particle beam drawing method - Google Patents
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JPH0722117B2 - Charged particle beam drawing method - Google Patents

Charged particle beam drawing method

Info

Publication number
JPH0722117B2
JPH0722117B2 JP2055955A JP5595590A JPH0722117B2 JP H0722117 B2 JPH0722117 B2 JP H0722117B2 JP 2055955 A JP2055955 A JP 2055955A JP 5595590 A JP5595590 A JP 5595590A JP H0722117 B2 JPH0722117 B2 JP H0722117B2
Authority
JP
Japan
Prior art keywords
length
pattern
drawn
shot
pitch
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2055955A
Other languages
Japanese (ja)
Other versions
JPH03257815A (en
Inventor
輝昭 沖野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Jeol Ltd
Original Assignee
Jeol Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jeol Ltd filed Critical Jeol Ltd
Priority to JP2055955A priority Critical patent/JPH0722117B2/en
Publication of JPH03257815A publication Critical patent/JPH03257815A/en
Publication of JPH0722117B2 publication Critical patent/JPH0722117B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Electron Beam Exposure (AREA)

Description

【発明の詳細な説明】 (産業上の利用分野) 本発明は微小幅の長いパターンを描画するのに適した荷
電粒子ビーム描画方法に関する。
TECHNICAL FIELD The present invention relates to a charged particle beam drawing method suitable for drawing a pattern having a long minute width.

(従来の技術) 最近、複数(例えば、二枚)の正方形状若しくは矩形状
の孔を持つアパーチャ板と、該各アパーチャ板間に集束
レンズと整形用偏向器を夫々光軸に沿って配置し、上方
のアパーチャ板の光を通過した荷電粒子ビームを該偏向
器により偏向させ、下方アパーチャ板の孔から所定の断
面形状及び大きさのビームを通過させ、該ビームを位置
決め用偏向器によりターゲット上の所定位置に照射する
事により所定のパターンを描画する様にした荷電粒子ビ
ーム描画方法(例えば、特願昭50−127833号参照)がパ
ターン描画に使用されている。この方法はターゲット上
に描画するパターンの形状及び大きさに合わせてビーム
の諾面形状及び大きさを可変してパターンを描画するの
で、高速に且つ高精度にパターン描画する事が出来る。
(Prior Art) Recently, an aperture plate having a plurality of (for example, two) square or rectangular holes, and a focusing lens and a shaping deflector are arranged between the aperture plates along the optical axis. , The charged particle beam that has passed through the light of the upper aperture plate is deflected by the deflector, and the beam of a predetermined cross-sectional shape and size is passed through the hole of the lower aperture plate, and the beam is directed onto the target by the positioning deflector A charged particle beam drawing method (for example, see Japanese Patent Application No. 50-127833) is used for drawing a pattern by drawing a predetermined pattern by irradiating a predetermined position. According to this method, the pattern is drawn by changing the acceptance surface shape and size of the beam in accordance with the shape and size of the pattern drawn on the target, so that the pattern can be drawn at high speed and with high accuracy.

さて、この様な描画方法に用いて、微小幅の長いパター
ンを描画する場合、ビームの断面を該描画すべきパター
ンの幅と同一幅で、適宜長さを有する様に整形し、該整
形したビームを該整形ビームの長さに等しいピッチで移
動させている。しかし、この様な長方形状の整形ビーム
(第3図(a))のビーム強度は均一ではなく、例え
ば、長さ方向のビーム強度分布は、第3図(b)の様に
周辺部にだれがある。その為に、描画されたパターンの
各ショット毎のパターンの繋ぎ目の部分が滑らかになら
ない。
Now, when a pattern with a very small width is drawn by using such a drawing method, the cross section of the beam is shaped to have the same width as the width of the pattern to be drawn and an appropriate length, and the shaping is performed. The beam is moved at a pitch equal to the length of the shaped beam. However, the beam intensity of such a rectangular shaped beam (FIG. 3 (a)) is not uniform, and for example, the beam intensity distribution in the longitudinal direction is sag in the peripheral portion as shown in FIG. 3 (b). There is. Therefore, the joint portion of the pattern for each shot of the drawn pattern is not smooth.

この様な問題を解決する為に、次の様な描画方法が提案
されている。
In order to solve such a problem, the following drawing method has been proposed.

第2図は、微小幅△Wで長さLのパターン1を、矩形状
ビームを矢印2の方向に順次移動させて描画する描画手
順を説明する為の図である。以下、描画に使用される矩
形ビームの長さの増大,縮小は前記ビーム断面整形方法
により行われ、そのビームの移動は位置決め用偏向器の
制御により行われる事は特に説明しない。先ず図示のよ
うに小さい矩形ビーム5で描画し、次のショットは矩形
ビーム6、次は矩形ビーム7と各ショット毎に矩形ビー
ムの大きさを大きくして行く。そして長さlの有する矩
形ビーム8に至る。この間矩形ビーム5〜8の始点側端
部5′〜8′はパターン1の始点側端部3の位置に一致
させたまま固定しビームの移動方向(矢印2の方向)に
矩形ビームの長さを増大させる。矩形ビームの長さは第
1ショットに用いたビーム5の長さを基準長lの1/n
(nは整数)とする。第2図では、n=4としたので、
ビーム5の長さはl/4となる。次いでビーム6は2l/4、
ビーム7は3l/4、ビーム8はlと一定の割合で長さを増
大させる。矩形ビームの長さがlに到達した後は、ビー
ムの長さlに固定し各ショット毎にビームの位置を矢印
2の方向に矩形ビーム9、10、11、12、……と、l/4の
ピッチで移動させる。そして、矩形ビーム13に至って終
点側端部13′がパターン1の終点側端部4の位置に一致
する。この後は矩形ビーム14、15、16と各ショット毎に
ビーム長さをl/4づつ縮小し、長さl/4の矩形ビーム16を
最終ショットしてパターン1の全描画過程を終了する。
上記ビーム13〜16の間は終点側端部13′〜16′の位置を
パターン1の終点側端部4に一致させたまま固定してお
く。
FIG. 2 is a diagram for explaining a drawing procedure for drawing the pattern 1 having the minute width ΔW and the length L by sequentially moving the rectangular beam in the direction of the arrow 2. Hereinafter, it is not particularly described that the length of the rectangular beam used for drawing is increased or decreased by the beam cross-section shaping method and the beam is moved by the control of the positioning deflector. First, as shown in the drawing, a small rectangular beam 5 is used for drawing, the next shot is the rectangular beam 6, the next is the rectangular beam 7, and the size of the rectangular beam is increased for each shot. Then, the rectangular beam 8 having the length 1 is reached. During this time, the end points 5'to 8'of the rectangular beams 5 to 8 are fixed while keeping the positions of the end points 3 to the starting point of the pattern 1 and the length of the rectangular beam in the beam moving direction (direction of arrow 2). Increase. The length of the rectangular beam is the length of the beam 5 used for the first shot, which is 1 / n of the reference length l.
(N is an integer). In FIG. 2, since n = 4,
The length of the beam 5 is l / 4. Then beam 6 is 2l / 4,
The length of the beam 7 is 3l / 4, and the length of the beam 8 is 1 at a constant rate. After the length of the rectangular beam reaches l, the beam length is fixed at l and the position of the beam is changed in the direction of the arrow 2 for each shot by the rectangular beams 9, 10, 11, 12, ..., l / Move at a pitch of 4. Then, reaching the rectangular beam 13, the end portion side end portion 13 ′ coincides with the position of the end portion side end portion 4 of the pattern 1. After this, the beam length is reduced by l / 4 for each shot with the rectangular beams 14, 15 and 16, and the rectangular beam 16 with a length of l / 4 is finally shot to complete the entire writing process of the pattern 1.
Between the beams 13 to 16, the positions of the end portions 13 'to 16' on the end point side are fixed while being aligned with the end portion 4 on the end point side of the pattern 1.

この様な方法によれば、描画すべきパターン1は、各シ
ョットの繋ぎ目を除く残りの全ての部分は4ショット分
の露光量が与えられている。又、各ショットの繋ぎ目
は、最大の場合で、5ショット分以下、最少の場合で3
ショット分以上と成るので(特開昭57−112016号参
照)、露光量はパターン1全域に亙って、4ショット分
±1ショット分以内となる。即ち、この方法での露光量
の変動は±25%以下となる。この実施例ではnを4とし
たので、露光量の変動は±25%以下であるが、nを大き
くする事により、露光量の変動(±100%/n)をより小
さく出来る。
According to such a method, in the pattern 1 to be drawn, the exposure amount for four shots is given to all the remaining portions except the joint of each shot. The maximum number of joints between shots is 5 shots or less, and the minimum is 3
Since the number of shots is equal to or more than that of the shots (see Japanese Patent Laid-Open No. 57-112016), the exposure amount is within 4 shots ± 1 shot over the entire pattern 1. That is, the fluctuation of the exposure amount by this method is ± 25% or less. In this embodiment, since n is 4, the fluctuation of the exposure amount is ± 25% or less, but the fluctuation of the exposure amount (± 100% / n) can be made smaller by increasing n.

(発明が解決しようとする問題点) さて、上記描画方法では、描画すべきパターン1の長さ
Lがピッチ(l/n)の整数倍の場合には良いが、パター
ン1の長さLがピッチ(l/n)の整数倍でない場合、例
えば、パターン1の長さがL+△H(△H<L/n)の場
合には、前記方法でLの長さ分を描画した後、断面の幅
が△W、長さ△Hの矩形ビームを整形し、該ビームでシ
ョット時間を増して残りの部分を描画している。
(Problems to be Solved by the Invention) In the above drawing method, the length L of the pattern 1 to be drawn is good when it is an integral multiple of the pitch (l / n), but the length L of the pattern 1 is When it is not an integral multiple of the pitch (l / n), for example, when the length of the pattern 1 is L + ΔH (ΔH <L / n), after drawing the length of L by the above method, the cross section A rectangular beam having a width of ΔW and a length of ΔH is shaped, the shot time is increased by the beam, and the remaining portion is drawn.

しかし、最終ショットの部分だけショット時間を変える
のは操作上面倒である。
However, it is troublesome to change the shot time only for the final shot.

又、極めて長さの短いビームを作成する事自体難しいの
で、パターンの終点部分の描画精度が低下する。
In addition, since it is difficult to form a beam having an extremely short length, the drawing accuracy at the end point of the pattern is reduced.

本発明はこのような問題を解決することを目的としたも
のである。
The present invention aims to solve such a problem.

(問題を解決するための手段) その為に本発明は、材料面における荷電粒子ビームの投
影像を所望の形状に整形し、該整形ビームを所定のピッ
チで移動させて所定のパターンを描画する荷電粒子ビー
ム描画方法において、描画開始に当たっては描画すべき
パターンの描画始点側端部に整形ビームの始点側端部を
一致させ、各ショット毎に該整形ビームの始点側端部を
固定したまま整形ビームの長さを段階的に増大し、該整
形ビームの長さが基準長さに達した後は該基準長さの整
形ビームを各ショット毎に該整形ビームの基準長さより
小なるピッチで移動せしめ、該整形ビームの終点側端部
と描画すべきパターンの描画終点側端部の距離がピッチ
の2倍の長さより小さくなった時、次のビームを、前記
距離から1ピット分差し引いた距離に対応した長さに前
記基準長さを加えた長さに整形して1ピッチ分移動さ
せ、その後は該ビームの終点側端部を固定したまま各シ
ョット毎に整形ビームの長さを段階的に縮小し、描画す
べきパターンのすべての部分に略一様に複数ショットの
描画を行うようにした。
(Means for Solving the Problem) Therefore, the present invention shapes the projected image of the charged particle beam on the material surface into a desired shape, and moves the shaped beam at a predetermined pitch to draw a predetermined pattern. In the charged particle beam drawing method, at the start of drawing, the end part of the shaping beam is aligned with the end part of the starting point of the pattern to be drawn, and shaping is performed for each shot while the end part of the shaping beam is fixed. The length of the beam is increased stepwise, and after the length of the shaped beam reaches the reference length, the shaped beam of the reference length is moved for each shot at a pitch smaller than the reference length of the shaped beam. At most, when the distance between the end of the shaped beam and the end of the drawing end of the pattern to be drawn becomes smaller than twice the pitch, the next beam is subtracted from the distance by one pit. Corresponding to The length of the shaped beam is gradually reduced for each shot with the end point side end of the beam fixed while shaping the length to the length obtained by adding the above-mentioned reference length. Then, the plural shots are drawn substantially uniformly on all the portions of the pattern to be drawn.

(実施例) 第1図は本発明の一実施例の手順を示す図で、例えば、
微小幅△Wで長さL+△H(△Hはピッチより小さい)
のパターン17を、矩形状ビームを矢印18の方向に順次移
動して描画する例で説明する。尚、19及び20はパターン
17の描画始点及び終点側端部を示す。以下、描画に使用
される矩形ビームの長さの増大,縮小は前記ビーム断面
整形方法により行われ、そのビームの移動は位置決め用
偏向器の制御により行われる事は特に説明しない。
(Embodiment) FIG. 1 is a diagram showing a procedure of an embodiment of the present invention.
Minute width ΔW and length L + ΔH (ΔH is smaller than the pitch)
The pattern 17 will be described using an example in which a rectangular beam is sequentially moved in the direction of arrow 18 to be drawn. 19 and 20 are patterns
17 shows end points on the drawing start point and end point side. Hereinafter, it is not particularly described that the length of the rectangular beam used for drawing is increased or decreased by the beam cross-section shaping method and the beam is moved by the control of the positioning deflector.

先ず、ピッチを基準長l/n(nは整数)とした時、例え
ば、n=4とした場合、長さl/4の矩形ビーム5で描画
する。次のショットは2l/4の矩形ビーム6、次は3l/4の
矩形ビーム7と各ショット毎に矩形ビームの大きさを大
きくして行く。そして、長さlを有する矩形ビーム8に
至る。この間矩形ビーム5〜8の始点側端部5′〜8′
はパターン17の始点側端部19の位置に一致させたまま固
定しビームの移動方向(矢印18の方向)に矩形ビームの
長さを増大させる。そして矩形ビームの長さがlに達し
た後は、ビームの長さlに固定し各ショット毎にビーム
の位置を矢印18の方向に矩形ビーム9、10、11、12、…
……とl/4のピッチで移動させる。
First, when the pitch is set to the reference length l / n (n is an integer), for example, when n = 4, the rectangular beam 5 having the length l / 4 is used for drawing. The next shot is a 2l / 4 rectangular beam 6, the next is a 3l / 4 rectangular beam 7, and the size of the rectangular beam is increased for each shot. Then, a rectangular beam 8 having a length 1 is reached. During this time, the ends 5'to 8'of the rectangular beams 5 to 8 on the starting point side
Is fixed while keeping the position of the end portion 19 on the starting point side of the pattern 17, and the length of the rectangular beam is increased in the moving direction of the beam (direction of arrow 18). After the length of the rectangular beam reaches l, the beam length is fixed to l and the position of the beam is changed in the direction of the arrow 18 for each shot by the rectangular beams 9, 10, 11, 12 ,.
...... and move at l / 4 pitch.

以下、ビームの位置を順次移動させて描画を行い、矩形
ビーム21に至ると、該矩形ビーム21の終端部21′が描画
すべきパターン17の終点側端部20からビーム移動方向の
反対方向にl/4+△Hの距離にある。この後は、本実施
例では次にショットする矩形ビームの長さをl+△Hに
整形し、該矩形ビーム22の端部22′をパターン17の描画
終点端部20に一致させ、ショットする。そして、この御
は矩形ビーム23、24、25と各ショット毎にビーム長さを
l/4づつ縮小し、長さl/4+△Hの矩形ビーム25を最終シ
ョットとしてパターン17の全描画過程を終了する。上記
ビーム22、23、24、25の間は終点側端部22′〜25′の位
置をパターン17の終点端部20に一致させたまま固定して
おく。
Thereafter, the position of the beam is sequentially moved to perform drawing, and when the rectangular beam 21 is reached, the end 21 ′ of the rectangular beam 21 is moved from the end 20 on the end side of the pattern 17 to be drawn in the direction opposite to the beam moving direction. It is at a distance of l / 4 + ΔH. After this, in the present embodiment, the length of the rectangular beam to be shot next is shaped to l + ΔH, and the end 22 ′ of the rectangular beam 22 is made to coincide with the drawing end point 20 of the pattern 17 and shot. And, this control has rectangular beams 23, 24, 25 and beam length for each shot.
The pattern beam 17 is reduced by l / 4, and the rectangular beam 25 having a length of l / 4 + ΔH is used as the final shot to complete the entire drawing process of the pattern 17. Between the beams 22, 23, 24 and 25, the positions of the end points 22 'to 25' on the end point side are fixed while being aligned with the end point 20 of the pattern 17.

尚、本発明は電子ビームの断面形状及び大きさを描画す
べきパターンに応じて整形し、所定位置にショットする
描画方法により微小幅で長いパターンを描画する場合だ
けではなく、同様のイオンビーム描画方法で微小幅で長
いパターンを描画する場合にも使用出来る。
The present invention is not limited to the case of drawing a long pattern with a minute width by a drawing method of shaping the cross-sectional shape and size of an electron beam according to the pattern to be drawn and shooting at a predetermined position, and the same ion beam drawing. It can also be used when a long pattern with a small width is drawn by the method.

(効果) 本発明は、描画開始に当たっては描画すべきパターンの
描画始点側端部に整形ビームの始点側端部を一致させ、
各ショット毎に該整形ビームの始点側端部を固定したま
ま整形ビームの長さを段階的に増大し、該整形ビームの
長さが基準長さに達した後は該基準長さの整形ビームを
各ショット毎に該整形ビームの基準長さより小なるピッ
チで移動せしめ、該整形ビームの終点側端部と描画すべ
きパターンの描画終点側端部の距離がピッチの2倍の長
さより小さくなった時、次のビームを、前記距離から1
ピッチ分差し引いた距離に対応した長さに前記基準長さ
を加えた長さに整形して1ピッチ分移動させ、その後は
該ビームの終点側端部を固定したまま各ショット毎に整
形ビームの長さを段階的に縮小し、描画すべきパターン
のすべての部分に略一様に複数ショットの描画を行うよ
うにしたので、描画すべきパターンの長さがピッチの整
数倍でない場合、最終のビームの大きさは従来の様に作
成不可能な程小さくならないので、終点部分の描画精度
が向上する。
(Effect) In the present invention, when the drawing is started, the drawing beam starting point side end part of the pattern to be drawn is made to coincide with the shaping beam starting point side end part,
For each shot, the length of the shaped beam is increased stepwise while the end of the shaped beam on the starting point side is fixed, and after the length of the shaped beam reaches the reference length, the shaped beam of the reference length is obtained. Is moved at a pitch smaller than the reference length of the shaped beam for each shot, and the distance between the end of the shaped beam and the end of the drawing end of the pattern to be drawn becomes smaller than twice the pitch. Then the next beam, 1 from the distance
The beam is shaped into a length corresponding to the distance subtracted by the pitch plus the reference length, and is moved by one pitch, and thereafter, the end of the beam is fixed and the shaped beam of each beam is shot for each shot. Since the length is reduced in stages and multiple shots are drawn almost uniformly on all parts of the pattern to be drawn, if the length of the pattern to be drawn is not an integer multiple of the pitch, the final Since the beam size does not become so small that it cannot be created as in the conventional case, the drawing accuracy at the end point is improved.

又、最終ショットのショット時間を従来を様に変える必
要がないので操作も簡単になる。
Further, since it is not necessary to change the shot time of the final shot as in the conventional case, the operation becomes simple.

【図面の簡単な説明】[Brief description of drawings]

第1図は本発明の一実施例の描画手順を説明する為の
図、第2図は従来の描画手順を説明する為の図、第3図
は矩形ビームの強度分布を説明する為の図である。 1……描画すべきパターン、2……矩形ビーム進行方
向、3……描画始点側端部、4……描画終点側端部、5
〜16……矩形ビーム、5′〜8′……始点側端部、13′
〜16′……終点側端部、21〜25……矩形ビーム、21′〜
25′……終点側端部、17……描画すべきパターン、18…
…矩形ビーム進行方向、19……描画始点側端部、20……
描画終点側端部
FIG. 1 is a diagram for explaining a drawing procedure of an embodiment of the present invention, FIG. 2 is a diagram for explaining a conventional drawing procedure, and FIG. 3 is a diagram for explaining an intensity distribution of a rectangular beam. Is. 1 ... Pattern to be drawn, 2 ... Rectangular beam traveling direction, 3 ... End of drawing start point, 4 ... End of drawing end, 5
~ 16 ...... rectangular beam, 5 '~ 8' ... start end side end, 13 '
~ 16 '…… End end side, 21 ~ 25 …… Rectangular beam, 21' ~
25 '... End of end point, 17 ... Pattern to be drawn, 18 ...
… Direction of rectangular beam, 19 …… End of drawing start point, 20 ……
End of drawing end

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】材料面における荷電粒子ビームの投影像を
所望の形状に整形し、該整形ビームを所定のピッチで移
動させて所定のパターンを描画する荷電粒子ビーム描画
方法において、描画開始に当たっては描画すべきパター
ンの描画始点側端部に整形ビームの始点側端部を一致さ
せ、各ショット毎に該整形ビームの始点側端部を固定し
たまま整形ビームの長さを段階的に増大し、該整形ビー
ムの長さが基準長さに達した後は該基準長さの整形ビー
ムを各ショット毎に該整形ビームの基準長さより小なる
ピッチで移動せしめ、該整形ビームの終点側端部と描画
すべきパターンの描画終点側端部の距離がピッチの2倍
の長さより小さくなった時、次のビームを、前記距離か
ら1ピッチ分差し引いた距離に対応した長さに前記基準
長さを加えた長さに整形して1ピッチ分移動させ、その
後は該ビームの終点側端部を固定したまま各ショット毎
に整形ビームの長さを段階的に縮小し、描画すべきパタ
ーンのすべての部分の略一様に複数ショットの描画を行
うことを特徴とする電子ビーム描画方法。
1. A charged particle beam drawing method of shaping a projected image of a charged particle beam on a material surface into a desired shape and moving the shaped beam at a predetermined pitch to draw a predetermined pattern, when starting drawing. Match the starting point side end of the shaped beam to the drawing starting point side end of the pattern to be drawn, and gradually increase the length of the shaped beam while fixing the starting point side end of the shaped beam for each shot, After the length of the shaped beam reaches the reference length, the shaped beam having the reference length is moved at a pitch smaller than the reference length of the shaped beam for each shot, and the end point side end portion of the shaped beam is moved. When the distance at the end point side of the drawing end of the pattern to be drawn becomes smaller than twice the pitch length, the reference length is set to the length corresponding to the distance obtained by subtracting one pitch from the next beam. Added length The beam is shaped and moved by one pitch, and then the length of the shaped beam is reduced stepwise for each shot while the end portion of the beam is fixed, so that all portions of the pattern to be drawn are substantially uniform. An electron beam drawing method characterized in that a plurality of shots are drawn on the same.
JP2055955A 1990-03-07 1990-03-07 Charged particle beam drawing method Expired - Fee Related JPH0722117B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2055955A JPH0722117B2 (en) 1990-03-07 1990-03-07 Charged particle beam drawing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2055955A JPH0722117B2 (en) 1990-03-07 1990-03-07 Charged particle beam drawing method

Publications (2)

Publication Number Publication Date
JPH03257815A JPH03257815A (en) 1991-11-18
JPH0722117B2 true JPH0722117B2 (en) 1995-03-08

Family

ID=13013499

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2055955A Expired - Fee Related JPH0722117B2 (en) 1990-03-07 1990-03-07 Charged particle beam drawing method

Country Status (1)

Country Link
JP (1) JPH0722117B2 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4790324B2 (en) * 2005-06-15 2011-10-12 株式会社日立ハイテクノロジーズ Pattern defect inspection method and apparatus
JP5228080B2 (en) * 2011-05-11 2013-07-03 株式会社日立ハイテクノロジーズ Pattern defect inspection method and apparatus

Also Published As

Publication number Publication date
JPH03257815A (en) 1991-11-18

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