JPS6150151B2 - - Google Patents
Info
- Publication number
- JPS6150151B2 JPS6150151B2 JP1877683A JP1877683A JPS6150151B2 JP S6150151 B2 JPS6150151 B2 JP S6150151B2 JP 1877683 A JP1877683 A JP 1877683A JP 1877683 A JP1877683 A JP 1877683A JP S6150151 B2 JPS6150151 B2 JP S6150151B2
- Authority
- JP
- Japan
- Prior art keywords
- discharge
- substrate
- plasma
- discharge space
- ultraviolet rays
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 claims description 20
- 238000007740 vapor deposition Methods 0.000 claims description 9
- 238000006243 chemical reaction Methods 0.000 claims description 6
- 238000006552 photochemical reaction Methods 0.000 claims description 6
- 238000009792 diffusion process Methods 0.000 claims description 4
- 239000007789 gas Substances 0.000 description 14
- 239000010408 film Substances 0.000 description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 238000000034 method Methods 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 3
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 3
- 229910052753 mercury Inorganic materials 0.000 description 3
- QYKABQMBXCBINA-UHFFFAOYSA-N 4-(oxan-2-yloxy)benzaldehyde Chemical compound C1=CC(C=O)=CC=C1OC1OCCCC1 QYKABQMBXCBINA-UHFFFAOYSA-N 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 239000007795 chemical reaction product Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000005192 partition Methods 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000003504 photosensitizing agent Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/48—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation
- C23C16/482—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating by irradiation, e.g. photolysis, radiolysis, particle radiation using incoherent light, UV to IR, e.g. lamps
Landscapes
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Description
【発明の詳細な説明】 本発明は光化学蒸着装置に関するものである。[Detailed description of the invention] The present invention relates to a photochemical vapor deposition apparatus.
最近、電子複写機の感光ドラムや太陽電池など
に使用されるアモルフアスシリコンに蒸着膜の形
成方法が研究されている。また、他方では各種の
絶縁膜や保護膜の形成にも蒸着方法が利用され、
用途によつては種々の蒸着方法が提案されている
が、このなかでも光化学反応を利用した光化学蒸
着方法は被膜形成速度が著しく早く、大面積部に
も均一な被膜を形成できるなどの利点を有し、最
近特に注目を集めている。 Recently, research has been conducted into methods of forming vapor deposited films on amorphous silicon used in photosensitive drums of electronic copying machines, solar cells, and the like. On the other hand, vapor deposition methods are also used to form various insulating films and protective films.
Various vapor deposition methods have been proposed depending on the application, but among these, the photochemical vapor deposition method that uses photochemical reactions has the advantage of being extremely fast in film formation and being able to form a uniform film even on large areas. has been attracting particular attention recently.
従来の光化学反応を利用した化学蒸着方法は、
紫外線をよく透過する容器内に基板を配置し、光
反応用ガスを流すとともに、容器外から、紫外線
ランプで当該ガスを光化学反応せしめ、その反応
生成物を基板に蒸着せしめるものであつて、前記
の大きな利点を有するが、反面、反応生成物が容
器の内壁にも蒸着してしまい、紫外線の透過を大
きく阻害する欠点があることが分つた。 Conventional chemical vapor deposition methods using photochemical reactions are
A substrate is placed in a container that transmits ultraviolet rays well, a photoreaction gas is passed through the container, and the gas is subjected to a photochemical reaction using an ultraviolet lamp from outside the container, and the reaction product is vapor-deposited on the substrate. However, on the other hand, it was found that the reaction product also deposited on the inner wall of the container, which significantly inhibited the transmission of ultraviolet rays.
そこで、光反応性ガスの通路であり、かつ基板
が配置される反応空間と、この光反応性ガスに光
化学反応を生起せしめる紫外線をプラズマ放電に
より発生させる放電空間とを同一容器で取り囲
み、プラズマと基板との間に隔壁を設けない、い
わゆる放電内蔵型光化学蒸着装置が研究開発され
ている。しかし電極間で放電されるプラズマは外
方に拡散するので、プラズマの密度が低下して紫
外線の発生効率が低くなる問題点がある。そして
この拡散したプラズマが基板の蒸着膜に損傷を与
えるのを防止するためにはプラズマ中のイオン電
子の平均自由行程より遠い位置に基板を置く必要
がある。そして一方では、基板に照射される紫外
線強度を大きくして効率を上げるために基板をで
きるだけ光源部に近づけなければならない。従つ
てイオンや電子の平均自由行程より遠い位置に基
板を置いたのでは十分な薄膜形成速度が得られに
くいという不具合がある。 Therefore, the reaction space, which is a path for the photoreactive gas and where the substrate is placed, and the discharge space, where the plasma discharge generates ultraviolet rays that cause a photochemical reaction in the photoreactive gas, are surrounded by the same container. A so-called photochemical vapor deposition device with built-in discharge, which does not have a partition between the substrate and the substrate, is being researched and developed. However, since the plasma discharged between the electrodes diffuses outward, there is a problem that the density of the plasma decreases and the efficiency of generating ultraviolet rays decreases. In order to prevent this diffused plasma from damaging the deposited film on the substrate, it is necessary to place the substrate at a position farther from the mean free path of ions and electrons in the plasma. On the other hand, the substrate must be brought as close to the light source as possible in order to increase the intensity of the ultraviolet rays irradiated onto the substrate and improve efficiency. Therefore, if the substrate is placed at a position farther than the mean free path of ions or electrons, there is a problem that it is difficult to obtain a sufficient thin film formation rate.
本発明はこれらの事情にかんがみてなされたも
のであり、簡単な構成でプラズマの拡散を防止し
て基板を光源部に接近させることを可能とし、効
率よく蒸着膜を形成できる放電内蔵型の光化学蒸
着装置を提供することを目的とする。そしてその
構成は、光反応性ガスの通路であり、かつ基板が
配置される反応空間と、この光反応性ガスに光化
学反応を生起せしめる紫外線をプラズマ放電によ
り発生させる放電空間とを同一容器で取り囲み、
放電空間に向けて放電用電極を対向配置するとと
もに、両電極の後方にそれぞれ電磁コイルを配設
し、放電空間に磁界を生じさせてプラズマの拡散
を防止することを特徴とする。 The present invention has been made in view of these circumstances, and is a photochemical device with a built-in discharge that prevents plasma diffusion with a simple configuration, allows the substrate to approach the light source, and enables efficient deposition film formation. The purpose is to provide a vapor deposition apparatus. The structure is such that the reaction space, which is a path for photoreactive gas and where the substrate is placed, and the discharge space, where ultraviolet rays that cause a photochemical reaction in this photoreactive gas are generated by plasma discharge, are surrounded by the same container. ,
Discharge electrodes are arranged facing each other toward the discharge space, and electromagnetic coils are arranged behind both electrodes to generate a magnetic field in the discharge space to prevent plasma diffusion.
以下に図面により本発明の実施例を具体的に説
明する。 Embodiments of the present invention will be specifically described below with reference to the drawings.
容器１の上部両端には一対の電極２，２が対向
して配設され、この電極２間が放電空間３を構成
している。そして電極２の近傍にガス供給孔１１
が設けられ、ここから放電用ガスが導入され、電
極２間で放電されてプラズマが発生する。放電空
間３の下部は光反応性ガスＧの通路であり、かつ
基板４が配置される反応空間５を構成している。
この両空間３，５間には透明石英ガラスなどの隔
壁は設けられず、発生した紫外線は直接基板４に
照射されるようになつている。そして両電極２，
２の後方にはそれぞれ電磁コイル６，６が配設さ
れてり、両電磁コイル６，６間に直線状の磁力線
が発生するようになつている。なお、図例では電
磁コイル６は容器１内に配設されているが、電極
２部の容器１が細い場合は容器１外周に電磁コイ
ル６を巻回してもよい。 A pair of electrodes 2, 2 are disposed facing each other at both upper ends of the container 1, and a discharge space 3 is formed between the electrodes 2. A gas supply hole 11 is located near the electrode 2.
A discharge gas is introduced from here and discharged between the electrodes 2 to generate plasma. The lower part of the discharge space 3 is a passage for the photoreactive gas G, and constitutes a reaction space 5 in which the substrate 4 is placed.
No partition wall made of transparent quartz glass or the like is provided between the spaces 3 and 5, so that the generated ultraviolet rays are directly irradiated onto the substrate 4. And both electrodes 2,
Electromagnetic coils 6, 6 are disposed behind the electromagnetic coils 2, respectively, so that linear lines of magnetic force are generated between the electromagnetic coils 6, 6. In the illustrated example, the electromagnetic coil 6 is disposed inside the container 1, but if the container 1 of the electrode 2 portion is thin, the electromagnetic coil 6 may be wound around the outer periphery of the container 1.
この装置を用いた蒸着例を示すと、反応空間５
に流す光反応性ガスＧの構成は、キヤリヤーガス
としてアルゴン５mmHg、光増感剤として水銀３
×10-3mmHg、分解蒸着用ガスとして四水素化珪
素0.3mmHgの混合ガスから成り、放電用ガスとし
て８mmHgのアルゴンと２×10-3mmHgの水銀の混
合ガスを供給する。基板４は約150℃に加熱され
たアルミナ板であり、電圧60V電流5Aで放電空間
３に放電させるとアルゴンと水銀の放電からの紫
外線で四水素化珪素が光分解し、アモルフアスの
珪素が基板４上に蒸着される。 In an example of vapor deposition using this device, the reaction space 5
The composition of the photoreactive gas G to be flowed is 5 mmHg of argon as a carrier gas and 3 mmHg of mercury as a photosensitizer.
×10 -3 mmHg, a mixed gas of silicon tetrahydride 0.3 mmHg is supplied as a gas for decomposition vaporization, and a mixed gas of 8 mmHg argon and 2 × 10 -3 mmHg mercury is supplied as a discharge gas. The substrate 4 is an alumina plate heated to about 150°C, and when it is discharged into the discharge space 3 at a voltage of 60V and a current of 5A, the silicon tetrahydride is photodecomposed by ultraviolet rays from the argon and mercury discharge, and the amorphous silicon becomes the substrate. 4.
ここで重要なことは電磁コイル６により放電空
間３に磁界が生れ、円柱状の磁力線束内でプラズ
マ放電が行れることである。従つてプラズマの電
子は磁力線の周囲をラセン状に旋回しながら進行
するので下方に拡散することがない。そして磁力
線束の直径を調整することによりプラズマの密度
を任意に制御することが可能である。このため発
生する紫外線量が増大し、かつ光源部に基板４を
接近させても蒸着膜がプラズマにより損傷される
ことがなく、強力な紫外線を照射することが可能
となる。従つて蒸着膜形成速度が速くなり、磁界
を生じさせない従来例に比べてその速度は数％向
上させることができる。 What is important here is that a magnetic field is generated in the discharge space 3 by the electromagnetic coil 6, and plasma discharge can occur within the cylindrical magnetic flux. Therefore, the electrons of the plasma travel while swirling around the magnetic lines of force in a helical manner, so that they do not diffuse downward. The density of the plasma can be arbitrarily controlled by adjusting the diameter of the magnetic flux. Therefore, the amount of ultraviolet rays generated increases, and even if the substrate 4 is brought close to the light source, the deposited film will not be damaged by the plasma, making it possible to irradiate strong ultraviolet rays. Therefore, the deposition film formation speed becomes faster, and the speed can be improved by several percent compared to the conventional example in which no magnetic field is generated.
以上説明したように、本発明は放電空間に磁界
を生じさせてプラズマの拡散を防止したので、基
板を光源部に接近させることが可能となり、強力
な紫外線を効率よく照射することができる放電内
蔵型の光化学蒸着装置を提供することができる。 As explained above, the present invention prevents plasma diffusion by generating a magnetic field in the discharge space, making it possible to bring the substrate close to the light source, and a built-in discharge that can efficiently irradiate powerful ultraviolet rays. A type of photochemical vapor deposition apparatus can be provided.
図面は実施例を示す断面図である。
１…容器、２…電極、３…放電空間、４…基
板、５…反応空間、６…電磁コイル。
The drawings are cross-sectional views showing examples. DESCRIPTION OF SYMBOLS 1... Container, 2... Electrode, 3... Discharge space, 4... Substrate, 5... Reaction space, 6... Electromagnetic coil.
Claims (1)
される反応空間と、この光反応性ガスに光化学反
応を生起せしめる紫外線をプラズマ放電により発
生させる放電空間とを同一容器で取り囲み、該放
電空間に向けて放電用電極を対向配置するととも
に、両電極の後方にそれぞれ電磁コイルを配設
し、放電空間に磁界を生じさせてプラズマの拡散
を防止することを特徴とする光化学蒸着装置。1 A reaction space, which is a path for photoreactive gas and in which a substrate is placed, and a discharge space, in which ultraviolet rays that cause a photochemical reaction in this photoreactive gas are generated by plasma discharge, are surrounded by the same container, and the discharge space is A photochemical vapor deposition apparatus characterized by disposing discharge electrodes facing each other and disposing electromagnetic coils behind both electrodes to generate a magnetic field in a discharge space and preventing plasma diffusion.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1877683A JPS59145779A (en) | 1983-02-09 | 1983-02-09 | Photochemical vapor deposition device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1877683A JPS59145779A (en) | 1983-02-09 | 1983-02-09 | Photochemical vapor deposition device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59145779A JPS59145779A (en) | 1984-08-21 |
| JPS6150151B2 true JPS6150151B2 (en) | 1986-11-01 |
Family
ID=11981031
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1877683A Granted JPS59145779A (en) | 1983-02-09 | 1983-02-09 | Photochemical vapor deposition device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59145779A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0627333B2 (en) * | 1984-08-25 | 1994-04-13 | 康夫 垂井 | Deposition method |
| JPH0752718B2 (en) * | 1984-11-26 | 1995-06-05 | 株式会社半導体エネルギー研究所 | Thin film formation method |
-
1983
- 1983-02-09 JP JP1877683A patent/JPS59145779A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59145779A (en) | 1984-08-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS6150150B2 (en) | ||
| KR920008122B1 (en) | Thin film forming apparatus | |
| JPS6150151B2 (en) | ||
| JPS60117711A (en) | Forming apparatus of thin film | |
| JPS5982732A (en) | Manufacture for semiconductor device | |
| JPS58159842A (en) | Manufacture of photoreceptor | |
| JPS6150152B2 (en) | ||
| JPS6250553B2 (en) | ||
| JPS60218474A (en) | Film forming method | |
| JPS62142783A (en) | Deposited film forming device by plasma cvd method | |
| JP2890693B2 (en) | Optical reversal CVD method | |
| JPS5916966A (en) | Chemical vapor deposition apparatus | |
| JP2629773B2 (en) | Method of forming multilayer thin film | |
| JPS6150147B2 (en) | ||
| JPS60126822A (en) | Method and apparatus for optical vapor growth | |
| JPH07105346B2 (en) | Radical beam photo CVD equipment | |
| JPS60212224A (en) | Photochemical reaction apparatus | |
| JPH02110919A (en) | Filming device | |
| JPS60182127A (en) | Photoexcitation reactor | |
| JPS59145780A (en) | Photochemical vapor deposition device | |
| JP3451674B2 (en) | Semiconductor manufacturing method | |
| JPS6156278A (en) | Film forming method | |
| JPS60212222A (en) | Photochemical reaction apparatus | |
| JPS60212223A (en) | Photochemical reaction apparatus | |
| JPS6230880A (en) | Deposited film forming device using plasma CVD method |