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JPS6155798B2 - - Google Patents
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JPS6155798B2 - - Google Patents

Info

Publication number
JPS6155798B2
JPS6155798B2 JP55020166A JP2016680A JPS6155798B2 JP S6155798 B2 JPS6155798 B2 JP S6155798B2 JP 55020166 A JP55020166 A JP 55020166A JP 2016680 A JP2016680 A JP 2016680A JP S6155798 B2 JPS6155798 B2 JP S6155798B2
Authority
JP
Japan
Prior art keywords
photoresist
insulating paste
semi
applying
upper layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55020166A
Other languages
Japanese (ja)
Other versions
JPS56116657A (en
Inventor
Hikari Kimura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP2016680A priority Critical patent/JPS56116657A/en
Publication of JPS56116657A publication Critical patent/JPS56116657A/en
Publication of JPS6155798B2 publication Critical patent/JPS6155798B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/01Manufacture or treatment
    • H10W70/05Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/0011Working of insulating substrates or insulating layers
    • H05K3/0017Etching of the substrate by chemical or physical means
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/40Forming printed elements for providing electric connections to or between printed circuits
    • H05K3/4038Through-connections; Vertical interconnect access [VIA] connections
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/46Manufacturing multilayer circuits
    • H05K3/4644Manufacturing multilayer circuits by building the multilayer layer by layer, i.e. build-up multilayer circuits

Landscapes

  • Production Of Multi-Layered Print Wiring Board (AREA)

Description

【発明の詳細な説明】 本発明はコンピユータ等電子機器に用いるIC
またはLSI実装用の高密度多層配線基板における
配線用接続穴の形成方法に関する。
[Detailed Description of the Invention] The present invention relates to an IC used in electronic equipment such as a computer.
Or, it relates to a method for forming wiring connection holes in a high-density multilayer wiring board for LSI mounting.

従来の多層配線用接続穴は、導体パターンを有
する基板上に導体パターンのうち上層導体との接
続部分が抜けるように、絶縁ペーストをシルクま
たはステンレスメツシユを介してスクリーン印刷
し、乾燥し、高温焼成し前記絶縁ペーストを焼結
させることにより形成されている。
Conventional connection holes for multilayer wiring are made by screen-printing an insulating paste on a board with a conductor pattern through silk or stainless steel mesh so that the connection part with the upper layer conductor of the conductor pattern can be removed, then drying it and heating it at high temperature. It is formed by firing and sintering the insulating paste.

しかしながら、このような形成方法では、シル
クまたはステンレスメツシユを介してスクリーン
印刷するため、絶縁層のように印刷エリアが広い
パターンでは、接続穴の寸法は200μφ(ミクロ
ン直径)位が量産的に見て限度であり、これより
も小さな寸法は困難となる。このため、配線パタ
ーンを高密度化できないという欠点がある。ま
た、絶縁ペーストの特性等により接続穴のうまり
と印刷後のレベリング時間のコントロールが厳密
に規定されているため、絶縁層のピンホール不良
が発生するという欠点もある。
However, in this forming method, screen printing is performed through silk or stainless steel mesh, so for patterns with a wide printing area such as insulating layers, the connection hole size is about 200 μφ (micron diameter) in mass production. This is the limit, and smaller dimensions are difficult. For this reason, there is a drawback that the wiring pattern cannot be made high-density. Furthermore, since the control of the connection hole size and the leveling time after printing is strictly regulated depending on the characteristics of the insulating paste, there is also the drawback that pinhole defects occur in the insulating layer.

本発明の目的は高密度化が可能で絶縁層のピン
ホール不良が極めて少ない高密度多層配線用接続
穴の形成方法を提供することにある。
An object of the present invention is to provide a method for forming connection holes for high-density multilayer wiring, which can achieve high density and has extremely few pinhole defects in the insulating layer.

本発明の形成方法は、導体パターンを有する耐
熱性絶縁基板の表面にフオトレジストを塗布した
のち上層導体との接続部分以外のフオトレジスト
を選択的に除去する第1の工程と、 前記第1の工程で形成された基板表面に絶縁ペ
ーストを全面にわたつて印刷し乾燥する第2の工
程と、 前記第2の工程で形成された基板の表面全面に
フオトレジストを塗布し上層導体との接続部分の
フオトレジストを選択的に除去すると同時にこの
部分の半固形状態の絶縁ペーストも除去する第3
の工程と、 前記第3の工程で形成された基板を高温焼成す
ることにより前記フオトレジストを焼却しかつ前
記半固形状態の絶縁ペーストを焼結させる第4の
工程とを含んでいる。
The forming method of the present invention includes a first step of applying a photoresist to the surface of a heat-resistant insulating substrate having a conductor pattern, and then selectively removing the photoresist other than the connection portion with the upper layer conductor; A second step of printing an insulating paste over the entire surface of the board formed in the step and drying it, and applying a photoresist to the entire surface of the board formed in the second step and applying it to the connection part with the upper layer conductor. The third step is to selectively remove the photoresist and at the same time also remove the semi-solid insulating paste in this area.
and a fourth step of incinerating the photoresist and sintering the semi-solid insulating paste by firing the substrate formed in the third step at a high temperature.

次に本発明について図面を参照して詳細に説明
する。
Next, the present invention will be explained in detail with reference to the drawings.

第1図から第6図は本発明の高密度多層配線用
接続穴の形成方法の一実施例を説明するための工
程断面図を示す。
1 to 6 show process cross-sectional views for explaining one embodiment of the method for forming connection holes for high-density multilayer wiring according to the present invention.

第1図に示す第1の工程では、耐熱性絶縁基板
1の表面に、ステンレス等のメツシユ状スクリー
ンを介して金(Au)、銀/パラジウム(Ag/
Pb)または銅(Cu)等の導体ペーストが印刷さ
れ、高温度焼成するかまたは選択部分メツキ方法
などで所望のパターンを有する導体パターン2が
形成される。第2図に示す第2の工程では、導体
パターン2のうち、上層導体との接続部分(後述
する工程で接続穴となる部分)にのみフオトレジ
スト3が形成される。
In the first step shown in FIG. 1, gold (Au), silver/palladium (Ag/
A conductive paste such as Pb) or copper (Cu) is printed, and a conductive pattern 2 having a desired pattern is formed by high-temperature firing or selective partial plating. In the second step shown in FIG. 2, the photoresist 3 is formed only on the portion of the conductor pattern 2 that connects to the upper layer conductor (the portion that will become a connection hole in the step described later).

すなわち、第1図に示した耐熱性絶縁基板1お
よび導体パターン2の表面全面にフオトレジスト
を塗布し、図示されていないマスクを介して所望
の部分にのみ光エネルギーを照射して露光および
現像することによりフオトレジスト3を形成でき
る。第3図に示す第3の工程では第2図に示した
基板表面1および3がすべて隠れるように絶縁ペ
ーストが印刷され、十分レベリングをしたあと
で、100℃〜120℃で10分〜15分ぐらい乾燥して、
半固形状態の絶縁ペースト4が形成される。な
お、この工程においては印刷後のレベリングは十
分に時間をかけて行なえるためピンホール不良を
極力おさえることができる。
That is, a photoresist is applied to the entire surface of the heat-resistant insulating substrate 1 and the conductive pattern 2 shown in FIG. 1, and only desired areas are irradiated with light energy through a mask (not shown) for exposure and development. By this, the photoresist 3 can be formed. In the third step shown in Fig. 3, the insulating paste is printed so as to cover all of the substrate surfaces 1 and 3 shown in Fig. 2, and after sufficient leveling, it is heated at 100°C to 120°C for 10 to 15 minutes. Dry about
A semi-solid insulating paste 4 is formed. Note that in this step, since leveling after printing can be carried out over a sufficient amount of time, pinhole defects can be suppressed as much as possible.

第4図に示す第4の工程では上記半固形状態の
絶縁ペースト4の表面にフオトレジスト5が塗布
される。
In the fourth step shown in FIG. 4, a photoresist 5 is applied to the surface of the semi-solid insulating paste 4.

第5図に示す第5の工程では、図示されていな
いマスクを介して上記フオトレジスト5の所望の
部分にのみ光エネルギーが照射露光され、そのあ
とで1・1・1トリクロルエタンなどの有機溶剤
によりフオトレジスト5のうち接続穴の部分が除
去される。これと同時にこの部分の前記半固形状
態の絶縁ペースト4も一緒に除去され接続穴6が
形成される。この工程においては、半固形状態の
絶縁ペースト4の除去制御が困難であり、例え
ば、同一基板内に点在する多くの接続穴を均一に
あけることは実際上不可能に近い。この結果、あ
る部分の接続穴は極端にえぐられているのに他の
部分では完全に除去されていないなど基板内での
バラツキが問題となる。従つて、全数が完全に除
去しようとすれば、ある部分は非常に大きくな
る。
In the fifth step shown in FIG. 5, only desired portions of the photoresist 5 are irradiated with light energy through a mask (not shown), and then an organic solvent such as 1.1.1 trichloroethane is used. As a result, the connection hole portion of the photoresist 5 is removed. At the same time, the semi-solid insulating paste 4 in this portion is also removed to form the connection hole 6. In this step, it is difficult to control the removal of the semi-solid insulating paste 4, and for example, it is practically impossible to uniformly drill the many connection holes scattered within the same substrate. As a result, variations within the board become a problem, such as connection holes being extremely gouged in some areas but not completely removed in other areas. Therefore, if all numbers were to be completely removed, some parts would become very large.

このため、接続穴寸法を大きくしたり、また配
線パターン間隔を大きくしたりすれば逃げられな
いことはないが高密度化にとつて大きな障害とな
つてしまう。
For this reason, it is possible to avoid this problem by increasing the size of the connection hole or by increasing the spacing between the wiring patterns, but this becomes a major obstacle to higher density.

そこで、前記フオトレジスト3を形成すること
により、半固形状態の絶縁ペースト4の除去オー
バーを極力減らしより均一な接続穴の形成を可能
とするとともに隣接配線パターンとのシヨートの
防止をしている。この他に、穴径および配線パタ
ーンピツチを大幅に微細化できるため高密度化に
適したものとなつている。
Therefore, by forming the photoresist 3, over-removal of the semi-solid insulating paste 4 is minimized, making it possible to form more uniform connection holes, and preventing shorts with adjacent wiring patterns. In addition, the hole diameter and wiring pattern pitch can be significantly miniaturized, making it suitable for high-density applications.

また、フオトレジスト5の現像と同時に半固形
状態の絶縁ペースト4の除去を行なうため絶縁ペ
ーストの膜厚が薄いほど、均一な形状の接続穴が
形成できる。フオトレジスト3を形成したもう一
つの理由は第5図のフオトレジスト3の真上の絶
縁ペーストを除去すれば実際はフオトレジスト3
の厚さ分だけ厚い絶縁層が形成できることにな
り、ピンホール不良の削減が可能となる。
Furthermore, since the semi-solid insulating paste 4 is removed at the same time as the photoresist 5 is developed, the thinner the insulating paste is, the more uniformly shaped the connection hole can be formed. Another reason for forming the photoresist 3 is that if you remove the insulating paste directly above the photoresist 3 in FIG.
This means that it is possible to form an insulating layer that is thicker by the thickness of , making it possible to reduce pinhole defects.

フオトレジスト3は次の工程で高温焼成により
焼却してなくなつてしまうからである。
This is because the photoresist 3 is incinerated by high-temperature firing in the next step and is lost.

第6図に示す第6の工程では、第5図に示した
基板1〜5を900℃〜930℃で高温焼成して前記フ
オトレジスト3および5を焼却すると同時に、半
固形状態の絶縁ペースト4が焼結され、上層導体
との接続穴6が有する絶縁層7を形成される。本
発明には、寸法精度を向上させより高密度化が達
成できるとともに絶縁層のピンホール不良を削減
して極めて少なくすることができるという効果が
ある。
In the sixth step shown in FIG. 6, the substrates 1 to 5 shown in FIG. is sintered to form an insulating layer 7 having a connection hole 6 with the upper layer conductor. The present invention has the advantage that dimensional accuracy can be improved to achieve higher density, and pinhole defects in the insulating layer can be reduced to an extremely low level.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図から第6図は本発明の一実施例を示す工
程断面図である。 第1図から第6図において、1…耐熱性絶縁基
板、2…導体パターン、3…フオトレジスト、4
…半固形状態の絶縁ペースト、5…フオトレジス
ト、6…上層導体との接続穴、7…接続穴を有す
る絶縁層。
1 to 6 are process sectional views showing one embodiment of the present invention. 1 to 6, 1...heat-resistant insulating substrate, 2...conductor pattern, 3...photoresist, 4
... Insulating paste in semi-solid state, 5... Photoresist, 6... Connection hole with upper layer conductor, 7... Insulating layer having connection hole.

Claims (1)

【特許請求の範囲】 1 導体パターンを有する耐熱性絶縁基板の表面
にフオトレジストを塗布したのち上層導体との接
続部分以外のフオトレジストを選択的に除去する
第1の工程と、 前記第1の工程で形成された基板表面に絶縁ペ
ーストを全面にわたつて印刷し乾燥する第2の工
程と、 前記第2の工程で形成された基板の表面全面に
フオトレジストを塗布し上層導体との接続部分の
フオトレジストを選択的に除去すると同時にこの
部分の半固形状態の絶縁ペーストも除去する第3
の工程と、 前記第3の工程で形成された基板を高温焼成す
ることにより前記フオトレジストを焼却しかつ前
記半固形状態の絶縁ペーストを焼結させる第4の
工程とを含むことを特徴とする高密度多層配線用
接続穴の形成方法。
[Scope of Claims] 1. A first step of applying a photoresist to the surface of a heat-resistant insulating substrate having a conductor pattern and then selectively removing the photoresist in areas other than the connection portion with the upper layer conductor; A second step of printing an insulating paste over the entire surface of the board formed in the step and drying it, and applying a photoresist to the entire surface of the board formed in the second step and applying it to the connection part with the upper layer conductor. The third step is to selectively remove the photoresist and at the same time also remove the semi-solid insulating paste in this area.
and a fourth step of incinerating the photoresist and sintering the semi-solid insulating paste by firing the substrate formed in the third step at a high temperature. A method for forming connection holes for high-density multilayer wiring.
JP2016680A 1980-02-19 1980-02-19 Formation of connecting hole for high-density-multilayer wiring Granted JPS56116657A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2016680A JPS56116657A (en) 1980-02-19 1980-02-19 Formation of connecting hole for high-density-multilayer wiring

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2016680A JPS56116657A (en) 1980-02-19 1980-02-19 Formation of connecting hole for high-density-multilayer wiring

Publications (2)

Publication Number Publication Date
JPS56116657A JPS56116657A (en) 1981-09-12
JPS6155798B2 true JPS6155798B2 (en) 1986-11-29

Family

ID=12019570

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016680A Granted JPS56116657A (en) 1980-02-19 1980-02-19 Formation of connecting hole for high-density-multilayer wiring

Country Status (1)

Country Link
JP (1) JPS56116657A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100663892B1 (en) * 2005-05-10 2007-01-03 성균관대학교산학협력단 Nano hole forming method and semiconductor device manufactured through this nano hole forming method

Also Published As

Publication number Publication date
JPS56116657A (en) 1981-09-12

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