JPS6158775B2 - - Google Patents
Info
- Publication number
- JPS6158775B2 JPS6158775B2 JP17238680A JP17238680A JPS6158775B2 JP S6158775 B2 JPS6158775 B2 JP S6158775B2 JP 17238680 A JP17238680 A JP 17238680A JP 17238680 A JP17238680 A JP 17238680A JP S6158775 B2 JPS6158775 B2 JP S6158775B2
- Authority
- JP
- Japan
- Prior art keywords
- gas
- ultrafine particle
- film
- sensitivity
- sensor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000011882 ultra-fine particle Substances 0.000 claims description 18
- 238000001514 detection method Methods 0.000 claims description 6
- 239000012528 membrane Substances 0.000 claims description 4
- 238000007740 vapor deposition Methods 0.000 claims description 2
- 239000007789 gas Substances 0.000 description 28
- 239000010408 film Substances 0.000 description 21
- 230000035945 sensitivity Effects 0.000 description 13
- 238000010586 diagram Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 239000010409 thin film Substances 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
- G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
- G01N27/12—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of a solid body in dependence upon absorption of a fluid; of a solid body in dependence upon reaction with a fluid, for detecting components in the fluid
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
Description
【発明の詳細な説明】
本発明は超微粒子ガスセンサを用いたガス検知
法に関し、超微粒子ガスセンサの感度のバラツキ
をなくするようなガス検知方法を提供することを
目的とする。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a gas detection method using an ultrafine particle gas sensor, and an object thereof is to provide a gas detection method that eliminates variations in sensitivity of the ultrafine particle gas sensor.
従来のガスセンサにおけるガス濃度の検知方法
は、被検ガスが存在する空気中にセンサを設置し
たときのセンサの電気抵抗の値ＲGの変化を測定
することであつた。そのためたとえば第１図に示
す回路でＲGの変化を測定する場合にサンプル間
で同一ガス濃度におけるＲGの値が異なる場合に
は、入力電圧Vinに対して同一出力電圧Vout（同
一感度）を得るために標準抵抗ＲSの値をサンプ
ル毎に調整することが必要であつた。本発明は従
来におけるこのような問題を解決しようとするも
ので、以下にその説明を行う。 A conventional method for detecting gas concentration in a gas sensor is to measure the change in the electrical resistance value R G of the sensor when the sensor is installed in the air where the gas to be detected exists. Therefore, for example, when measuring changes in R G using the circuit shown in Figure 1, if the values of R G at the same gas concentration differ between samples, the same output voltage Vout (same sensitivity) should be used for the input voltage Vin. In order to obtain this, it was necessary to adjust the value of the standard resistance R S for each sample. The present invention aims to solve such problems in the prior art, and will be explained below.
超微粒子膜とは、一般に0.1Torrから10Torr程
度のO2ガス圧下で蒸着を行うことにより形成さ
れる膜をいう。 The ultrafine particle film generally refers to a film formed by vapor deposition under an O 2 gas pressure of about 0.1 Torr to 10 Torr.
本発明は、超微粒子ガスセンサを被検ガスが存
在しない空気中に設置した場合のセンサの抵抗値
がＲOであり、被検ガス中ではＲGであるとする
と、超微粒子ガス感応膜を用いた超微粒子ガスセ
ンサにおいては、サンプルの抵抗値ＲOがバラツ
イても感度（ＲO／ＲG）がＲOに無関係に一定値
を示すという現象を見い出したことにもとづいて
なされたものである。 The present invention uses an ultrafine particle gas-sensitive membrane, assuming that the resistance value of the ultrafine particle gas sensor when installed in air without a gas to be detected is R O and R G in the gas to be detected. This was based on the discovery of a phenomenon in which the sensitivity (R O /R G ) of the ultrafine particle gas sensor exhibits a constant value regardless of R O even if the resistance value R O of the sample varies.
そして、本発明は超微粒子ガス感応膜を特に数
百℃の高温に加熱して動作させるとガス感度（Ｒ
O／ＲG）がＲOのバラツキに無関係に一定になる
という現象のみならず、雰囲気空気中の湿度に対
する影響が全くないという現象を見い出したこと
にもとづいてなされたものである。 The present invention also shows that when the ultrafine particle gas-sensitive film is operated by heating it to a high temperature of several hundred degrees Celsius, the gas sensitivity (R
This was done based on the discovery that not only does O /R G ) become constant regardless of variations in R O , but also that it has no effect on the humidity in the atmosphere.
ここで第２図ａ，ｂを用い超微粒子ガス感応膜
を用いた超微粒子ガスセンサの構造の一例につい
て述べる。Ｐ形シリコン基板１の表面にSiO2膜
７を設け、その表面に電極４′，４″，４を設け
その上部に超微粒子ガス感応膜５を設けている。
３′，３″は開口８′，８″を介してＰ形基板１に接
続されている電極端子である。６′，６″はボンデ
ングパツドである。 Here, an example of the structure of an ultrafine particle gas sensor using an ultrafine particle gas sensitive membrane will be described using FIGS. 2a and 2b. A SiO 2 film 7 is provided on the surface of a P-type silicon substrate 1, electrodes 4', 4'', and 4 are provided on the surface, and an ultrafine particle gas sensitive film 5 is provided on the top thereof.
3', 3'' are electrode terminals connected to the P-type substrate 1 through openings 8', 8''. 6' and 6'' are bonding pads.
たとえば３′，３″間に電力を印加して発生した
ジユール熱により加熱された基板１の熱が絶縁物
被膜７を介して超微粒子ガス感応膜５まで伝導
し、膜５を加熱するようになつている。 For example, the heat of the substrate 1 heated by Joule heat generated by applying electric power between 3' and 3'' is conducted to the ultrafine particle gas sensitive film 5 through the insulating film 7, and heats the film 5. It's summery.
さて次に以上のようなガスセンサにおけるガス
感応膜の特性について第３図，第４図を用い説明
する。 Next, the characteristics of the gas sensitive film in the gas sensor as described above will be explained using FIGS. 3 and 4.
第３図は膜の厚さと電気抵抗ＲOとの関係を示
すものであり、パラメータは膜を形成するときの
酸素ガス圧である。ここで0.05Torr中で作成した
膜（第３図ｃ）は従来の薄膜に近い膜組織を有す
るものである。Ａ，Ｂ，Ｃいずれの場合でも、膜
厚が厚くなるにつれて、ＲOの膜厚依存性は小さ
くなることを示している。この領域ではＲOの製
造バラツキが小さくなることを示している。第４
図は第３図に示した膜を数百℃に加熱して動作さ
せたときのガスに対する感度（ＲO／ＲG）を示し
たものである。第４図Ａ，Ｂ，Ｃの記号は第３図
中のＡ，Ｂ，Ｃに相当している。第４図からも明
らかなように薄膜であるＣの場合には、感度は膜
厚とともに低下するが、超微粒子ガス感応膜の場
合（Ａ，Ｂ）には感度は膜厚には無関係にほぼ一
定である。 FIG. 3 shows the relationship between the film thickness and the electrical resistance R O , where the parameter is the oxygen gas pressure when forming the film. The film prepared here at 0.05 Torr (Fig. 3c) has a film structure close to that of conventional thin films. In all cases A, B, and C, it is shown that as the film thickness increases, the film thickness dependence of R O becomes smaller. This indicates that manufacturing variations in R O are small in this region. Fourth
The figure shows the sensitivity to gas (R O /R G ) when the film shown in FIG. 3 is heated to several hundred degrees Celsius and operated. The symbols A, B, and C in FIG. 4 correspond to A, B, and C in FIG. As is clear from Figure 4, in the case of C, which is a thin film, the sensitivity decreases with the film thickness, but in the case of ultrafine particle gas-sensitive films (A, B), the sensitivity is almost independent of the film thickness. constant.
すなわち、抵抗値ＲOの値がサンプル間でバラ
ツイても感度（ＲO／ＲG）がＲOのバラツキには
無関係に一定となることはＲOに対する調整を
個々のサンプルについて行う必要がないことを示
している。 In other words, even if the resistance value R O varies between samples, the sensitivity (R O /R G ) remains constant regardless of the variation in R O. This means that there is no need to adjust R O for each sample. It is shown that.
以上述べたように本発明によるとＲOをセンサ
感度の基準値として設定することにより感度のバ
ラツキをなくすことが可能となる。したがつて、
従来の場合のように感度を一定にするためにＲS
を調整することは必要でなくなる。電気回路的処
理によつて感度を調整することができるなど実用
上の利点が多い。 As described above, according to the present invention, it is possible to eliminate variations in sensitivity by setting R O as a reference value for sensor sensitivity. Therefore,
In order to keep the sensitivity constant as in the conventional case, R S
It is no longer necessary to adjust. It has many practical advantages, such as the ability to adjust sensitivity through electrical circuit processing.
なおガスセンサ素子を記憶素子と組合せ、その
記憶素子に感応膜のＲO値をいつたん記憶させて
おけば簡単な構造で感度バラツキのないガス検知
装置を得ることが可能となる。 Note that by combining the gas sensor element with a memory element and storing the R O value of the sensitive film in the memory element, it is possible to obtain a gas detection device with a simple structure and no variation in sensitivity.
第１図は従来のガス検知法を説明するための
図、第２図ａ，ｂは超微粒子ガスセンサを示す図
で、このうち図ａは平面図、図ｂは図ａの破線Ａ
−A′を含む断面図である。第３図および第４図
は本発明の一実施例を説明するための図である。
１……基板、３′，３″……電極端子、４，
４″，４……電極、５……超微粒子感応膜、７
……絶縁物被膜。
Figure 1 is a diagram for explaining the conventional gas detection method, and Figures 2a and 2b are diagrams showing an ultrafine particle gas sensor. Figure a is a plan view, and Figure b is a broken line A in Figure
It is a sectional view including -A'. FIGS. 3 and 4 are diagrams for explaining one embodiment of the present invention. 1... Board, 3', 3''... Electrode terminal, 4,
4'', 4...electrode, 5...ultrafine particle sensitive membrane, 7
...Insulating film.
Claims (1)
を行うことにより形成される超微粒子からなるガ
ス感応膜を有する超微粒子ガスセンサを用い、上
記ガス感応膜の、被検ガスが存在しない雰囲気に
おける電気抵抗値ＲOと、被検ガスが含まれる雰
囲気における電気抵抗値ＲGとをそれぞれ測定
し、上記ＲOとＲGとの比でもつてガスを検知する
ことを特徴とする超微粒子ガスセンサを用いたガ
ス検知法。 ２ ガス感応膜を加熱した状態にしてＲOとＲGと
をそれぞれ測定することを特徴とする特許請求の
範囲第１項記載の超微粒子ガスセンサを用いたガ
ス検知法。[Claims] 1. Using an ultrafine particle gas sensor having a gas sensitive film made of ultrafine particles formed by vapor deposition under an O 2 gas pressure of about 0.1 Torr to 10 Torr, The gas is detected by measuring the electrical resistance value RO in an atmosphere in which no gas is present and the electrical resistance value RG in an atmosphere containing the gas to be detected, and detecting the gas based on the ratio of the above-mentioned RO to RG . A gas detection method using an ultrafine particle gas sensor. 2. A gas detection method using an ultrafine particle gas sensor according to claim 1, characterized in that R O and R G are each measured while the gas sensitive membrane is heated.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55172386A JPS5796248A (en) | 1980-12-05 | 1980-12-05 | Detecting method for gas using superparticulate gas sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP55172386A JPS5796248A (en) | 1980-12-05 | 1980-12-05 | Detecting method for gas using superparticulate gas sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5796248A JPS5796248A (en) | 1982-06-15 |
| JPS6158775B2 true JPS6158775B2 (en) | 1986-12-13 |
Family
ID=15940952
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP55172386A Granted JPS5796248A (en) | 1980-12-05 | 1980-12-05 | Detecting method for gas using superparticulate gas sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5796248A (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH041492Y2 (en) * | 1984-12-27 | 1992-01-20 | ||
| JPH041493Y2 (en) * | 1984-12-27 | 1992-01-20 | ||
| JPH0411165Y2 (en) * | 1984-12-28 | 1992-03-19 | ||
| JPH0411166Y2 (en) * | 1984-12-28 | 1992-03-19 | ||
| JPS6221034A (en) * | 1985-07-19 | 1987-01-29 | Junkosha Co Ltd | Liquid leak detection sensor |
-
1980
- 1980-12-05 JP JP55172386A patent/JPS5796248A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5796248A (en) | 1982-06-15 |
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