JPS6161681B2 - - Google Patents
Info
- Publication number
- JPS6161681B2 JPS6161681B2 JP14709181A JP14709181A JPS6161681B2 JP S6161681 B2 JPS6161681 B2 JP S6161681B2 JP 14709181 A JP14709181 A JP 14709181A JP 14709181 A JP14709181 A JP 14709181A JP S6161681 B2 JPS6161681 B2 JP S6161681B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor
- graphite sheet
- paste
- sheet
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 27
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 22
- 229910002804 graphite Inorganic materials 0.000 claims description 22
- 239000010439 graphite Substances 0.000 claims description 22
- 229910052751 metal Inorganic materials 0.000 claims description 13
- 239000002184 metal Substances 0.000 claims description 13
- 239000000919 ceramic Substances 0.000 claims description 4
- 239000000843 powder Substances 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 229910052573 porcelain Inorganic materials 0.000 claims 1
- 239000000758 substrate Substances 0.000 description 11
- 238000000034 method Methods 0.000 description 7
- 239000000203 mixture Substances 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 238000002485 combustion reaction Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000007772 electroless plating Methods 0.000 description 2
- 239000000446 fuel Substances 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- -1 BaCO 3 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 238000000889 atomisation Methods 0.000 description 1
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 description 1
- 229910002113 barium titanate Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
Landscapes
- Apparatuses And Processes For Manufacturing Resistors (AREA)
- Thermistors And Varistors (AREA)
Description
【発明の詳細な説明】
本発明は正特性磁器半導体の製造方法に関する
ものであり、例えば内燃機関の燃料霧化促進装
置、温風装置などに用いて好都合である。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for manufacturing a positive characteristic ceramic semiconductor, and is conveniently used, for example, in a fuel atomization promoting device for an internal combustion engine, a hot air device, and the like.
従来、正特性磁器半導体には無電解メツキ法に
よるオーミツク電極の表面に金属粉末を含むペー
ストの塗布焼付によるカバー電極が形成してあ
る。この半導体を加熱装置として用いた場合、そ
の半導体の熱を金属基板に良好に伝えるために半
導体と金属基板との間に熱伝導シートを介在させ
る方法が提案されている。 Conventionally, a cover electrode has been formed on a positive characteristic ceramic semiconductor by coating and baking a paste containing metal powder on the surface of an ohmic electrode using an electroless plating method. When this semiconductor is used as a heating device, a method has been proposed in which a heat conductive sheet is interposed between the semiconductor and the metal substrate in order to effectively transfer the heat of the semiconductor to the metal substrate.
このシートは一般には弾性をもつた合成樹脂と
金属粉末との混合物が従来知られている。 This sheet is generally known to be a mixture of elastic synthetic resin and metal powder.
しかしながら、従来のシートはその製造が面倒
であり、しかも金属基板と半導体との間に介在
（接着しない）する構造のため、組付時にシート
の位置がずれやすく、従つて組付性が非常に悪い
という問題を有している。 However, conventional sheets are troublesome to manufacture, and because they have a structure in which they are interposed (not bonded) between the metal substrate and the semiconductor, the position of the sheet is likely to shift during assembly, making assembly very difficult. It has the problem of being bad.
そこで、本発明は上記の点に鑑み、熱伝導シー
トとしてグラフアイト製のシート（以下グラフア
イトシートと略す）を用い、半導体の表面に前記
ペーストを塗布した後にその塗布部にグラフアイ
トシートを接着し、その後に焼付けることによつ
てカバー電極とグラフアイトシートとを一体的に
結合することにより、上記の諸問題を解決しよう
とするものである。 Therefore, in view of the above points, the present invention uses a sheet made of graphite (hereinafter abbreviated as graphite sheet) as a heat conductive sheet, and after applying the paste on the surface of a semiconductor, adheres the graphite sheet to the applied part. However, the above-mentioned problems are attempted to be solved by integrally bonding the cover electrode and the graphite sheet by subsequent baking.
以下本発明を第１図の具体的実施例により詳細
に説明する。本発明方法においては、まず従来公
知の方法によつてTiO2、BaCO3、PbO、SiO2、
Y2O3等を混合して焼成したチタン酸バリウム系
正特性磁器半導体１を得る。この半導体１は例え
ば円板状の形状を有している。半導体１は特定温
度で抵抗値が急増するキユーリー点をもつてい
る。次いで、半導体１の両面を公知の方法で研摩
して、その研摩表面に無電解メツキ法によりNi
製のオーミツク電極２を形成する。その後、この
オーミツク電極２の表面に、公知のAg粉末を含
むペーストを150メツシユ〜300メツシユのスクリ
ーンにより印刷する。このペースト面に、そのペ
ーストが充分乾燥して固まらない内に塗布後直ち
に厚み0.1〜0.5mmのグラフアイトシート４をその
ペースト自身の粘着力により接着し、その後全体
を150℃〜550℃の温度で焼成し、上記ペーストを
焼付ける。 The present invention will be explained in detail below with reference to a specific embodiment shown in FIG. In the method of the present invention, TiO 2 , BaCO 3 , PbO, SiO 2 ,
A barium titanate-based positive characteristic ceramic semiconductor 1 is obtained by mixing and firing Y 2 O 3 and the like. This semiconductor 1 has, for example, a disk shape. The semiconductor 1 has a Curie point where the resistance value increases rapidly at a specific temperature. Next, both sides of the semiconductor 1 are polished by a known method, and Ni is deposited on the polished surfaces by electroless plating.
An ohmic electrode 2 made of Thereafter, a known paste containing Ag powder is printed on the surface of the ohmic electrode 2 using a screen of 150 to 300 meshes. Immediately after application, a graphite sheet 4 with a thickness of 0.1 to 0.5 mm is adhered to this paste surface using the adhesive strength of the paste itself, before the paste has sufficiently dried and hardened, and then the whole is heated to a temperature of 150℃ to 550℃. to bake the above paste.
これにより、ペーストはカバー電極３となり、
かつグラフアイトシート４はこの電極３と一体的
に結合し、剥離することがなくなる。 As a result, the paste becomes the cover electrode 3,
Moreover, the graphite sheet 4 is integrally bonded to the electrode 3, and will not peel off.
なお、このグラフアイトシート４の上面には金
属基板５が取付けられており、このグラフアイト
シート４を介して半導体１が基板５にばね等を用
いて圧着してある。 A metal substrate 5 is attached to the upper surface of the graphite sheet 4, and the semiconductor 1 is pressed onto the substrate 5 via the graphite sheet 4 using a spring or the like.
本発明は上述のごとく、グラフアイトシート４
がカバー電極３と一体的に結合しているため、上
記のように半導体１を金属基板５に組付ける際に
グラフアイトシート４がずれることがなく、組付
作業性が非常によくなる。また、カバー電極３と
グラフアイトシート４とを結合するのに接着剤を
使用しておらず、カバー電極３の焼付工程を利用
しているため、グラフアイトシート４の結合も非
常に簡単である。 As described above, the present invention provides a graphite sheet 4
Since the graphite sheet 4 is integrally combined with the cover electrode 3, the graphite sheet 4 does not shift when the semiconductor 1 is assembled to the metal substrate 5 as described above, and the assembly work efficiency is greatly improved. Further, since no adhesive is used to bond the cover electrode 3 and the graphite sheet 4, and the baking process of the cover electrode 3 is used, bonding the graphite sheet 4 is also very easy. .
次に、第２図〜第５図に実験結果を示す。 Next, experimental results are shown in FIGS. 2 to 5.
第２図は前記Agペーストのスクリーン印刷に
用いるスクリーンのメツシユサイズがガソリン混
合気に与える電力に与える影響を示している。ガ
ソリン混合気に与える電力（以下電力という）と
は第１図に示した構成において、金属基板５の表
面に定温度、定流量のガソリン混合気をあてた時
の半導体１が消費する電力である。メツシユサイ
ズが300メツシユ以上ではAgペーストの厚みが充
分でなく、グラフアイトシート４が良好に接着さ
れず電力は低下する。 FIG. 2 shows the influence of the mesh size of the screen used for screen printing of the Ag paste on the electric power applied to the gasoline mixture. The electric power applied to the gasoline mixture (hereinafter referred to as electric power) is the electric power consumed by the semiconductor 1 when a constant temperature and constant flow rate of gasoline mixture is applied to the surface of the metal substrate 5 in the configuration shown in FIG. . If the mesh size is 300 meshes or more, the thickness of the Ag paste will not be sufficient, and the graphite sheet 4 will not be bonded well, resulting in a decrease in power.
第３図は半導体１とグラフアイトシート４との
寸法差がシヨートに与える影響を示す。第３図の
シヨート率とは、第１図の構成にて振動耐久を行
ない、シヨート発生数／全数とした。第３図のｄ
寸法（半導体１の外縁とシート４の外縁との間の
寸法）が0.5mmより小さいと、シヨートを発生す
る。 FIG. 3 shows the effect that the dimensional difference between the semiconductor 1 and the graphite sheet 4 has on the shot. The shot rate in FIG. 3 is expressed as the number of shots generated/total number after vibration durability was carried out using the configuration shown in FIG. d in Figure 3
If the dimension (dimension between the outer edge of the semiconductor 1 and the outer edge of the sheet 4) is smaller than 0.5 mm, shoots will occur.
第４図はグラフアイトシート４の厚さが電力に
与える影響を示す。グラフアイトシート４の厚さ
が0.1mmより薄い場合、半導体１および金属基板
５の表面粗度および歪に充分追従できず、電力が
減少する。また、0.5mmより厚い場合、熱伝導性
が悪化し、電力が減少する。 FIG. 4 shows the influence of the thickness of the graphite sheet 4 on the electric power. When the thickness of the graphite sheet 4 is thinner than 0.1 mm, it cannot sufficiently follow the surface roughness and distortion of the semiconductor 1 and the metal substrate 5, resulting in a decrease in power. Moreover, if it is thicker than 0.5 mm, thermal conductivity will deteriorate and power will decrease.
第５図はAgペーストの焼付温度が電力に与え
る影響を示す。焼付温度が550℃より高いと、グ
ラフアイトシート４が分解してしまい、熱伝導性
が悪化し、電力が減少する。 Figure 5 shows the effect of baking temperature of Ag paste on electric power. If the baking temperature is higher than 550°C, the graphite sheet 4 will decompose, resulting in poor thermal conductivity and reduced power.
また、焼付温度が150℃より低い温度で焼付け
可能なAgペーストに使用できる材質は、耐熱性
を考慮すればない。 Furthermore, there are no materials that can be used for Ag paste that can be baked at a baking temperature lower than 150°C, if heat resistance is taken into account.
次に、本発明の方法により得た半導体を採用し
た加熱装置を第６，７，８図に示す。 Next, a heating device employing the semiconductor obtained by the method of the present invention is shown in FIGS. 6, 7, and 8.
第６図は金属基板５と底板８とにより半導体１
を収納したものであり、図中７はスプリングであ
る。これは例えば内燃機関の吸気管のライザ壁に
固定され、ライザヒータとして用いる。 FIG. 6 shows a semiconductor 1 made up of a metal substrate 5 and a bottom plate 8.
7 in the figure is a spring. This is fixed, for example, to the riser wall of the intake pipe of an internal combustion engine and used as a riser heater.
第７図および第８図は円筒５，９の間に半導体
１を配設し、かつ正電極板６と絶縁材８を配設し
て複数のＵ字形ばね７で半導体１を圧接したもの
である。これは例えば内燃機関の気化器と吸気管
との間に配置して円筒５の内側に燃料混合気を流
す。 In FIGS. 7 and 8, a semiconductor 1 is arranged between cylinders 5 and 9, a positive electrode plate 6 and an insulating material 8 are arranged, and the semiconductor 1 is pressed by a plurality of U-shaped springs 7. be. This is arranged, for example, between the carburetor and the intake pipe of an internal combustion engine, and allows the fuel mixture to flow inside the cylinder 5.
なお、本発明において、グラフアイトシート４
は半導体１および金属基板５の歪および表面粗度
をその弾性力にて吸収し、密着性の向上となり極
めて良好な伝熱特性を示す。グラフアイトシート
４は電気伝導性も優れる。 In addition, in the present invention, the graphite sheet 4
absorbs the strain and surface roughness of the semiconductor 1 and metal substrate 5 with its elastic force, improves adhesion and exhibits extremely good heat transfer properties. The graphite sheet 4 also has excellent electrical conductivity.
第９図にその効果を示す。Ａは本発明の例、Ｂ
は半導体および金属基板を研摩し、両者を直接圧
着した例、Ｃは研摩せずに両者を直接圧着した例
を示す。 Figure 9 shows the effect. A is an example of the present invention, B
C shows an example in which the semiconductor and metal substrates were polished and then directly pressed together, and C shows an example in which they were directly pressed together without polishing.
なお、本発明において、電極２，３の材質はオ
ーミツク接触であり、かつ接触抵抗が低ければ上
述の実施例に限らず、なんでもよい。 In the present invention, the material of the electrodes 2 and 3 is not limited to the above-mentioned embodiments, but may be of any material as long as it is an ohmic contact and has a low contact resistance.
第１図は本発明により得た半導体を用いた加熱
装置を示す断面図、第２図〜第５図は本発明の説
明に供する特性図、第６図および第７図は本発明
により得た半導体を用いた加熱装置を示す断面
図、第８図は第７図のＡ部拡大断面図、第９図は
本発明の効果の説明に供する特性図である。
１……半導体、２，３……電極、４……グラフ
アイトシート。
FIG. 1 is a cross-sectional view showing a heating device using a semiconductor obtained according to the present invention, FIGS. 2 to 5 are characteristic diagrams for explaining the present invention, and FIGS. FIG. 8 is an enlarged sectional view of section A in FIG. 7, and FIG. 9 is a characteristic diagram for explaining the effects of the present invention. 1... Semiconductor, 2, 3... Electrode, 4... Graphite sheet.
Claims (1)
ともに、その表面に金属粉末を含むペーストを塗
布焼付けてカバー電極を形成する際に、そのペー
ストを塗布後にグラフアイト製のシートをそのペ
ースト塗布面に接着し、その後焼付けて前記シー
トを前記カバー電極に一体的に結合する正特性磁
器半導体の製造方法。1. When an electrode is formed on the surface of a PTC ceramic semiconductor, and a paste containing metal powder is applied and baked on the surface to form a cover electrode, a graphite sheet is placed on the paste-coated surface after the paste is applied. A method of manufacturing a positive temperature coefficient porcelain semiconductor, including bonding and subsequent baking to integrally bond the sheet to the cover electrode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14709181A JPS5848407A (en) | 1981-09-17 | 1981-09-17 | Method of producing positive temperature coefficient porcelain semiconductor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14709181A JPS5848407A (en) | 1981-09-17 | 1981-09-17 | Method of producing positive temperature coefficient porcelain semiconductor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5848407A JPS5848407A (en) | 1983-03-22 |
| JPS6161681B2 true JPS6161681B2 (en) | 1986-12-26 |
Family
ID=15422266
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14709181A Granted JPS5848407A (en) | 1981-09-17 | 1981-09-17 | Method of producing positive temperature coefficient porcelain semiconductor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5848407A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6431573U (en) * | 1987-08-19 | 1989-02-27 |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60246693A (en) * | 1984-05-22 | 1985-12-06 | 三洋電機株式会社 | Hybrid integrated circuit |
-
1981
- 1981-09-17 JP JP14709181A patent/JPS5848407A/en active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6431573U (en) * | 1987-08-19 | 1989-02-27 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5848407A (en) | 1983-03-22 |
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