JPS6211517B2 - - Google Patents
Info
- Publication number
- JPS6211517B2 JPS6211517B2 JP10207177A JP10207177A JPS6211517B2 JP S6211517 B2 JPS6211517 B2 JP S6211517B2 JP 10207177 A JP10207177 A JP 10207177A JP 10207177 A JP10207177 A JP 10207177A JP S6211517 B2 JPS6211517 B2 JP S6211517B2
- Authority
- JP
- Japan
- Prior art keywords
- light
- light emitting
- emitting diode
- emitting device
- receiving element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 12
- 239000013307 optical fiber Substances 0.000 claims description 8
- 230000003287 optical effect Effects 0.000 claims description 6
- 239000002184 metal Substances 0.000 description 5
- LTPBRCUWZOMYOC-UHFFFAOYSA-N Beryllium oxide Chemical compound O=[Be] LTPBRCUWZOMYOC-UHFFFAOYSA-N 0.000 description 4
- 239000012212 insulator Substances 0.000 description 3
- 238000012544 monitoring process Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 2
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012806 monitoring device Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
Landscapes
- Light Receiving Elements (AREA)
- Led Device Packages (AREA)
- Led Devices (AREA)
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
Description
【発明の詳細な説明】
本発明は半導体発光装置に係り、特に光フアイ
バ通信装置用の半導体発光装置に関するものであ
る。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a semiconductor light emitting device, and more particularly to a semiconductor light emitting device for an optical fiber communication device.
光フアイバ通信装置用半導体発光装置の代表例
としては、米国ベル研究所で提案されたいわゆる
バラス型LEDが知られている。一方、通信装置
としては、発光装置の発生する発光出力を監視す
る為に発光出力監視装置が必要であり、その為従
来は発光出力の一部を、例えばハーフミラー等の
手段を用いて発光出力監視用受光素子に導くとい
う方法がとられていた。しかしながら、この様な
方法は通信装置の複雑化を招き、したがつて経済
的に見ても不都合であつた。 A typical example of a semiconductor light emitting device for an optical fiber communication device is a so-called ballad type LED proposed by Bell Laboratories in the United States. On the other hand, as a communication device, a light emitting output monitoring device is required to monitor the light emitting output generated by the light emitting device.For this reason, conventionally, a part of the light emitting output is output using a means such as a half mirror. The method used was to guide the light to a monitoring light-receiving element. However, such a method complicates the communication device and is therefore economically disadvantageous.
本発明の目的は、かかる欠点に鑑み、より簡単
かつ経済性に優れた半導体発光装置を得ることで
ある。 SUMMARY OF THE INVENTION In view of these drawbacks, an object of the present invention is to provide a semiconductor light emitting device that is simpler and more economical.
本発明によれば、発光ダイオードと受光素子と
を一つの容器内に収容し、かつ前記発光ダイオー
ドの発生する光出力を光フアイバ・ケーブルに導
きうる構造の発光装置を構成することにより、前
記目的を達成しうる半導体発光装置が得られる。 According to the present invention, by configuring a light emitting device having a structure in which a light emitting diode and a light receiving element are housed in one container and the light output generated by the light emitting diode can be guided to an optical fiber cable, the above object can be achieved. A semiconductor light emitting device that can achieve the following can be obtained.
以下、図面に関連して本発明を詳細に説明す
る。第１図は、本発明の一実施例を示す発光装置
の断面図で、１はバラス型発光ダイオード、２は
受光トランジスタ、３は光フアイバ・ケーブル、
４は半導体収容容器を示す。LED用直流入力の
電極端子５と金属ステム９間に直流電流（交流電
流が重畳されていても良い）を印加することによ
り得られる光信号出力１０の大半は光フアイバ・
ケーブル３に導かれるが、その光出力の一部１１
は金属製の収容容器４の内面１３で反射され、そ
の反射光１２は受光トランジスタ２に到達する。
該受光トランジスタ２は、発光ダイオード１の主
軸１４に対してその主軸１５をずらして金属ステ
ム９上に取付けられ、更にベース電極端子６およ
びエミツタ電極端子７と電気的接続がなされてお
り、光発光出力の大きさに対応するコレクタ電流
は、ステム９と前記エミツタ電極端子７とから外
部に取出しうる。したがつてコレクタ電流を監視
することにより、発光ダイオードの発生する光出
力を監視することができる。 The invention will now be explained in detail in conjunction with the drawings. FIG. 1 is a cross-sectional view of a light emitting device showing an embodiment of the present invention, in which 1 is a ballast type light emitting diode, 2 is a light receiving transistor, 3 is an optical fiber cable,
4 indicates a semiconductor container. Most of the optical signal output 10 obtained by applying a direct current (alternating current may be superimposed) between the electrode terminal 5 of the LED direct current input and the metal stem 9 is an optical fiber.
A portion of its optical output 11 is guided by cable 3.
is reflected by the inner surface 13 of the metal container 4, and the reflected light 12 reaches the light receiving transistor 2.
The light-receiving transistor 2 is mounted on a metal stem 9 with its main axis 15 shifted from the main axis 14 of the light-emitting diode 1, and is electrically connected to a base electrode terminal 6 and an emitter electrode terminal 7, and emits light. A collector current corresponding to the magnitude of the output can be taken out from the stem 9 and the emitter electrode terminal 7. Therefore, by monitoring the collector current, it is possible to monitor the light output generated by the light emitting diode.
なお、８は電極端子とステム９とを電気的に絶
縁する為の絶縁体である。又、収容容器４の光フ
アイバ・ケーブル３が貫通している部分は、樹脂
等で気密封止されている。 Note that 8 is an insulator for electrically insulating the electrode terminal and the stem 9. Further, the portion of the container 4 through which the optical fiber cable 3 passes is hermetically sealed with resin or the like.
本実施例によれば、発光ダイオード１の主軸１
４と受光トランジスタ２の主軸１５との位置を互
いにずらし、かつ同一ステム面上に両半導体素子
を配置することにより、それ自体で光出力監視が
可能な半導体発光装置が得られる。 According to this embodiment, the main shaft 1 of the light emitting diode 1
4 and the main axis 15 of the light-receiving transistor 2 are shifted from each other, and by arranging both semiconductor elements on the same stem surface, a semiconductor light-emitting device capable of monitoring optical output by itself can be obtained.
なお、本実施例では、発光ダイオードの一方の
電極と受光トランジスタのコレクタとがステム９
により同一電位になる場合についてのみ示したが
これら電位を分離する必要がある場合には、例え
ば金属ステム９と発光ダイオード１との間に熱伝
導度が良く、かつ電気絶縁性に優れたベリリアま
たはダイアモンド等の絶縁体を配置し、かつ前記
発光ダイオード１の両端にバイアス電圧を印加し
うる如くに二つの引き出し電極端子を設ける事に
より目的が達成できる。 In this embodiment, one electrode of the light emitting diode and the collector of the light receiving transistor are connected to the stem 9.
Although only the case where the potentials are the same is shown above, if it is necessary to separate these potentials, for example, a material such as beryllia or beryllia, which has good thermal conductivity and excellent electrical insulation, can be used between the metal stem 9 and the light emitting diode 1. This purpose can be achieved by arranging an insulator such as a diamond and providing two lead-out electrode terminals so that a bias voltage can be applied to both ends of the light emitting diode 1.
以上、要するに本発明によれば、発光素子と受
光素子とを互いにその主軸をずらして配置するこ
とにより、発光出力の監視が簡単に出来かつ経済
性のある半導体発光装置が得られる。 In summary, according to the present invention, by arranging the light emitting element and the light receiving element so that their principal axes are shifted from each other, an economical semiconductor light emitting device can be obtained in which the light emission output can be easily monitored.
第１図は本発明の一実施例を示す断面図であ
る。
１……発光ダイオード、２……受光トランジス
タ、３……光フアイバ・ケーブル、４……半導体
収容容器、５，６，７……引出し電極端子、８…
…絶縁体、９……金属ステム、１０……光出力、
１１……光出力の一部、１２……反射光、１３…
…容器内面、１４……発光ダイオードの主軸、１
５……受光素子の主軸。
FIG. 1 is a sectional view showing one embodiment of the present invention. DESCRIPTION OF SYMBOLS 1... Light emitting diode, 2... Light receiving transistor, 3... Optical fiber cable, 4... Semiconductor container, 5, 6, 7... Extracting electrode terminal, 8...
...Insulator, 9...Metal stem, 10...Light output,
11...Part of optical output, 12...Reflected light, 13...
... Inner surface of container, 14 ... Main axis of light emitting diode, 1
5... Main axis of the light receiving element.
Claims (1)
ダイオードを収容する容器を貫通して設けられた
光フアイバ・ケーブルに伝達する半導体発光装置
において、前記発光ダイオードの主軸に対して受
光素子の主軸位置が異る如くにかつ前記光信号の
一部が前記容器の内面で反射されて前記受光素子
に到達するように受光素子と発光ダイオードとが
同一ステム上に並置されている事を特徴とする半
導体発光装置。1. In a semiconductor light emitting device that transmits an optical signal generated by a light emitting diode to an optical fiber cable provided through a container housing the light emitting diode, the main axis position of the light receiving element is different from the main axis of the light emitting diode. A semiconductor light-emitting device characterized in that a light-receiving element and a light-emitting diode are juxtaposed on the same stem so that a part of the optical signal is reflected on the inner surface of the container and reaches the light-receiving element. .
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10207177A JPS5435692A (en) | 1977-08-24 | 1977-08-24 | Luminous semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10207177A JPS5435692A (en) | 1977-08-24 | 1977-08-24 | Luminous semiconductor device |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61235946A Division JPS62115787A (en) | 1986-10-03 | 1986-10-03 | Semiconductor light-emitting device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5435692A JPS5435692A (en) | 1979-03-15 |
| JPS6211517B2 true JPS6211517B2 (en) | 1987-03-12 |
Family
ID=14317524
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10207177A Granted JPS5435692A (en) | 1977-08-24 | 1977-08-24 | Luminous semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5435692A (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55878U (en) * | 1979-06-14 | 1980-01-07 | ||
| JPS58199575A (en) * | 1982-05-14 | 1983-11-19 | Matsushita Electric Ind Co Ltd | Photoelectric device |
| JP4165592B2 (en) * | 2001-04-17 | 2008-10-15 | 日亜化学工業株式会社 | Light emitting device |
| KR101419381B1 (en) * | 2010-04-07 | 2014-07-15 | 한국전자통신연구원 | Apparatus for Bi-directional Optical transmission |
| JP7343278B2 (en) * | 2018-01-29 | 2023-09-12 | ローム株式会社 | Control circuit for light receiving/emitting device, position detection device, imaging device |
-
1977
- 1977-08-24 JP JP10207177A patent/JPS5435692A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5435692A (en) | 1979-03-15 |
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