JPS621245B2 - - Google Patents
Info
- Publication number
- JPS621245B2 JPS621245B2 JP11548378A JP11548378A JPS621245B2 JP S621245 B2 JPS621245 B2 JP S621245B2 JP 11548378 A JP11548378 A JP 11548378A JP 11548378 A JP11548378 A JP 11548378A JP S621245 B2 JPS621245 B2 JP S621245B2
- Authority
- JP
- Japan
- Prior art keywords
- silver
- layer
- conductive layer
- nickel
- electroless
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 40
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 39
- 229910052709 silver Inorganic materials 0.000 claims description 39
- 239000004332 silver Substances 0.000 claims description 39
- 238000000034 method Methods 0.000 claims description 26
- 229910052759 nickel Inorganic materials 0.000 claims description 21
- 238000007747 plating Methods 0.000 claims description 14
- RJTANRZEWTUVMA-UHFFFAOYSA-N boron;n-methylmethanamine Chemical compound [B].CNC RJTANRZEWTUVMA-UHFFFAOYSA-N 0.000 claims description 12
- 229910052573 porcelain Inorganic materials 0.000 claims description 12
- 239000003638 chemical reducing agent Substances 0.000 claims description 9
- 239000003985 ceramic capacitor Substances 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 8
- 238000010030 laminating Methods 0.000 claims description 4
- 238000000151 deposition Methods 0.000 claims 1
- 239000010410 layer Substances 0.000 description 53
- 229910000679 solder Inorganic materials 0.000 description 13
- 238000007772 electroless plating Methods 0.000 description 7
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 6
- 230000006866 deterioration Effects 0.000 description 5
- 239000005388 borosilicate glass Substances 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 4
- 238000007654 immersion Methods 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 150000002815 nickel Chemical class 0.000 description 3
- 239000002344 surface layer Substances 0.000 description 3
- 238000005406 washing Methods 0.000 description 3
- NLXLAEXVIDQMFP-UHFFFAOYSA-N Ammonia chloride Chemical compound [NH4+].[Cl-] NLXLAEXVIDQMFP-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- XFXPMWWXUTWYJX-UHFFFAOYSA-N Cyanide Chemical compound N#[C-] XFXPMWWXUTWYJX-UHFFFAOYSA-N 0.000 description 2
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- UORVGPXVDQYIDP-UHFFFAOYSA-N borane Chemical compound B UORVGPXVDQYIDP-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- NDVLTYZPCACLMA-UHFFFAOYSA-N silver oxide Chemical compound [O-2].[Ag+].[Ag+] NDVLTYZPCACLMA-UHFFFAOYSA-N 0.000 description 2
- SQGYOTSLMSWVJD-UHFFFAOYSA-N silver(1+) nitrate Chemical compound [Ag+].[O-]N(=O)=O SQGYOTSLMSWVJD-UHFFFAOYSA-N 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- FPZWZCWUIYYYBU-UHFFFAOYSA-N 2-(2-ethoxyethoxy)ethyl acetate Chemical compound CCOCCOCCOC(C)=O FPZWZCWUIYYYBU-UHFFFAOYSA-N 0.000 description 1
- 101710134784 Agnoprotein Proteins 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 229910021586 Nickel(II) chloride Inorganic materials 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 235000019270 ammonium chloride Nutrition 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 229910000085 borane Inorganic materials 0.000 description 1
- 239000012461 cellulose resin Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- KXZJHVJKXJLBKO-UHFFFAOYSA-N chembl1408157 Chemical compound N=1C2=CC=CC=C2C(C(=O)O)=CC=1C1=CC=C(O)C=C1 KXZJHVJKXJLBKO-UHFFFAOYSA-N 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 125000001309 chloro group Chemical group Cl* 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000013527 degreasing agent Substances 0.000 description 1
- 125000000118 dimethyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 239000000839 emulsion Substances 0.000 description 1
- 229960002089 ferrous chloride Drugs 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- NMCUIPGRVMDVDB-UHFFFAOYSA-L iron dichloride Chemical compound Cl[Fe]Cl NMCUIPGRVMDVDB-UHFFFAOYSA-L 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- QMMRZOWCJAIUJA-UHFFFAOYSA-L nickel dichloride Chemical compound Cl[Ni]Cl QMMRZOWCJAIUJA-UHFFFAOYSA-L 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- PIBWKRNGBLPSSY-UHFFFAOYSA-L palladium(II) chloride Chemical compound Cl[Pd]Cl PIBWKRNGBLPSSY-UHFFFAOYSA-L 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000003014 reinforcing effect Effects 0.000 description 1
- 150000003378 silver Chemical class 0.000 description 1
- 229910001961 silver nitrate Inorganic materials 0.000 description 1
- 229910001923 silver oxide Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 239000012279 sodium borohydride Substances 0.000 description 1
- 229910000033 sodium borohydride Inorganic materials 0.000 description 1
- 239000001509 sodium citrate Substances 0.000 description 1
- NLJMYIDDQXHKNR-UHFFFAOYSA-K sodium citrate Chemical compound O.O.[Na+].[Na+].[Na+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O NLJMYIDDQXHKNR-UHFFFAOYSA-K 0.000 description 1
- MNWBNISUBARLIT-UHFFFAOYSA-N sodium cyanide Chemical compound [Na+].N#[C-] MNWBNISUBARLIT-UHFFFAOYSA-N 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
Landscapes
- Ceramic Capacitors (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
Description
〔産業上の利用分野〕
本発明は、半田浸漬時のコンデンサ特性の劣化
が少なく、半田付性及び電極の密着性が良好な磁
器コンデンサの製造方法に関する。
〔従来の技術〕
従来、磁器コンデンサは、硼珪酸鉛系ガラス質
粉末(フリツト)を混入した酸化銀又は金属銀の
粉末を溶剤、樹脂等の溶液を混入して銀ペースト
とし、これを磁器素体表面に塗布、焼付けを行な
うことにより電極を形成していた。
然しこの方法では、半田浸漬後、銀電極の半田
中への拡散、剥離により電極密着強度の低下、静
電容量の減少、tanδの劣化等を生ずる欠点を有
していた。
そこで、銀ペーストを磁器素体表面に塗布した
後に、例えばクロール又はソーダが混入したメツ
キ液或いはシアンが混入したメツキ液を使用した
メツキ法により銀層を形成する方法、又は、ジメ
チルアミンボランを還元剤とする無電解銀メツキ
法により銀層を積層する方法が提案されている。
〔発明が解決しようとする問題点〕
然し、前者の場合には、クロール又はソーダを
混入したものでは、得られたコンデンサが絶縁不
良を起こす虞があり、又、シアンを用いたもので
は、公害を誘発する虞があるため、設備が大掛か
りとなり、望ましくない等の理由によつて実施さ
れていないのが実情である。
又、後者の場合には、半田浸漬時に銀層の一部
が半田中に拡散又は剥離して下層の銀層を酸化さ
せ、電極密着強度の低下、静電容量の減少、tan
δの劣化等を招く虞があり、宜しくなかつた。
〔発明の目的〕
本発明は、これらの欠点を除去すると共に量産
性に優れ且つ低コストにより生産可能な磁器コン
デンサの製造方法を提供することを目的とするも
のである。
〔問題点を解決するための手段〕
本発明に係る磁器コンデンサの製造方法は、磁
器素体表面に銀焼付法で第一導電層を付与し、こ
の第一導電層上にジメチルアミンボランを還元剤
とする無電解銀メツキ法により銀層を積層して第
二導電層を付与して成る電極を形成する磁器コン
デンサの製造方法に於て、第一導電層上にジメチ
ルアミンボランを還元剤とする無電解銀メツキ法
により銀層を積層して第二導電層を付与する前
に、第一導電層上にニツケルメツキ法によりニツ
ケル層を積層するように構成したものである。
〔発明の作用〕
本発明に於ては、第二導電層が、第一導電層上
にジメチルアミンボランを還元剤とする無電解メ
ツキ法によりニツケル層を積層し、且つこのニツ
ケル層上にジメチルアミンボランを還元剤とする
無電解銀メツキ法により銀層を積層して形成され
ているから、ニツケル層と銀層との密着性が良
く、半田浸漬時に表層の銀が一部半田中に拡散し
たとしても、下層のニツケル層の表面が酸化され
ていないため、半田付性が良好である。
〔発明の実施例〕
以下、本発明の実施例を図面に従つて説明す
る。
図に於て、1は任意の形状を為す磁器素体であ
り、この磁器素体1の表面の指定された箇所に公
知の銀ペーストを塗布、焼付けした第一導電層a
が付与されている。2はこの第一導電層a上にジ
メチルアミンボランを還元剤とする無電解メツキ
法により形成されたニツケル層、3はこのニツケ
ル層2上にジメチルアミンボランを還元剤とする
無電解銀メツキ法により形成された銀層であり、
ニツケル層2と銀層3とで第二導電層bを構成し
ている。
次に、本発明に係る磁器コンデンサの製造方法
について説明する。
まず、第一導電層aの付与は、磁器素体1の表
面に硼珪酸鉛系ガラス質粉末(フリツト)及び樹
脂、溶剤を混入した銀ペーストを塗布、焼付けす
ることで行なわれる。この銀ペーストとしては、
例えば金属銀粉末75%、硼珪酸鉛系ガラス質フリ
ツト6%、セルローズ系樹脂バインダー及びカル
ビトールアセテート19%を混練したものを使用
し、スクリーン印刷手法により磁器素体1の表面
の必要面積に選択塗布し、その後800℃で焼付け
する。この第一導電層aに於ては、磁器素体1と
銀焼付けによる第一導電層a間を硼珪酸鉛系ガラ
ス質フリツトが融着補強することにより、強い密
着度を生じている。
第一導電層aの付与後、エマルジヨン脱脂剤に
より表面の汚れを落とす。更に、約5%の希硫酸
に1〜3分間浸漬して表面活性化を行ない、水洗
い後、5%塩化第一鉄溶液に塩化パラジウム50
ppmを加えた溶液中に20℃、1〜2分間浸漬し
た後、水洗いし、次にこれをジメチルアミンボラ
ン(DMAB)を還元剤とした無電解メツキ法に
て50〜55℃、1時間でメツキを行なう。無電解メ
ツキ液としては、塩化ニツケル(NiCl2・6H2O)
30g/、クエン酸ナトリウム(Na3C6H5O7・
2H2O)60g/、塩化アンモニウム(NH4Cl)
30g/、ジメチルアミンボラン
〔(CH3)2NHBH3〕5g/を水酸化ナトリウム
でPH7.3に調整した液を使用した。
このニツケル層2の付与によりコンデンサの性
能を具備するのであるが、空気中に放置した場
合、ニツケル表面に酸化皮膜を生じ、半田付性が
悪くなり、実用的でないため、本発明は、以下の
如くこのニツケル層2上に銀層3をホウ素系無電
解銀メツキにより付与して半田付性を良好ならし
めている。ニツケル層2を付与する無電解メツキ
では、析出ニツケル皮膜は半光択な上に、皮膜の
不働態化速度が遅いため、次の工程であるホウ素
系無電解銀メツキに於て、ニツケル層2と銀層3
の密着性を増すことができる。
ニツケル層2の付与後、水洗いを充分に行な
い、ジメチルアミンボランを還元剤とした無電解
銀メツキ法により50℃、15分間にて銀層3を付与
する。無電解銀メツキ液としては、硝酸銀
(AgNO3)8.5g/、シアン化ナトリウム
(NaCN)7.35g/、水素化ホウ素ナトリウム
(NaBH4)0.35g/を水酸化ナトリウムでPH
13.0に調整した液を使用した。その後、充分な水
洗いを行ない、電極を形成する。
尚、前記ニツケル層2及び銀層3の無電解メツ
キは、本発明の目的を逸脱しない範囲であれば前
記比率に限定するものではない。
本発明による磁器コンデンサを300℃溶融半田
へ1分間浸漬後の特性(半田浸漬前の値に対する
静電容量変化率及び半田浸漬後の電極、素子間引
張強度)を第1表に示す。
[Industrial Field of Application] The present invention relates to a method for manufacturing a ceramic capacitor that exhibits little deterioration of capacitor characteristics during solder immersion and has good solderability and electrode adhesion. [Prior Art] Conventionally, porcelain capacitors are made by mixing silver oxide or metallic silver powder mixed with lead borosilicate glass powder (frit) and a solution such as a solvent or resin to form a silver paste, which is then made into a porcelain element. Electrodes were formed by coating and baking on the body surface. However, this method has the disadvantage that after solder immersion, the silver electrode diffuses into the solder and peels off, resulting in a decrease in electrode adhesion strength, a decrease in capacitance, and a deterioration in tan δ. Therefore, after applying silver paste to the surface of the porcelain body, a method is proposed in which a silver layer is formed by a plating method using, for example, a plating solution mixed with chloro or soda or a plating solution mixed with cyanide, or by reducing dimethylamine borane. A method has been proposed in which a silver layer is laminated using an electroless silver plating method. [Problem to be solved by the invention] However, in the former case, if chlorine or soda is mixed, the resulting capacitor may have insulation defects, and if cyanide is used, it may cause pollution. The reality is that this method is not implemented due to reasons such as the need for large-scale equipment and undesirability, as there is a risk of inducing In the latter case, part of the silver layer diffuses into the solder or peels off during solder immersion, oxidizing the underlying silver layer, resulting in a decrease in electrode adhesion strength, a decrease in capacitance, and a decrease in tan.
This was not desirable as it might lead to deterioration of δ. [Object of the Invention] It is an object of the present invention to provide a method for manufacturing a ceramic capacitor that eliminates these drawbacks, has excellent mass productivity, and can be produced at low cost. [Means for Solving the Problems] The method for manufacturing a ceramic capacitor according to the present invention includes applying a first conductive layer to the surface of the ceramic body by a silver baking method, and reducing dimethylamine borane onto the first conductive layer. In a method for manufacturing a ceramic capacitor, in which an electrode is formed by laminating a silver layer by an electroless silver plating method and applying a second conductive layer, dimethylamine borane is applied as a reducing agent on the first conductive layer. A nickel layer is laminated on the first conductive layer by a nickel plating method before a silver layer is laminated by an electroless silver plating method and a second conductive layer is applied. [Function of the invention] In the present invention, the second conductive layer is formed by laminating a nickel layer on the first conductive layer by an electroless plating method using dimethylamine borane as a reducing agent, and on this nickel layer, dimethyl Since the silver layer is laminated using an electroless silver plating method using amine borane as a reducing agent, the adhesion between the nickel layer and the silver layer is good, and some of the silver on the surface layer diffuses into the solder when immersed in solder. Even so, the surface of the underlying nickel layer is not oxidized, so the solderability is good. [Embodiments of the Invention] Examples of the present invention will be described below with reference to the drawings. In the figure, reference numeral 1 denotes a porcelain body having an arbitrary shape, and a first conductive layer a made by coating and baking a known silver paste on designated areas on the surface of the porcelain body 1.
has been granted. 2 is a nickel layer formed on this first conductive layer a by an electroless plating method using dimethylamine borane as a reducing agent, and 3 is a nickel layer formed on this nickel layer 2 by an electroless silver plating method using dimethylamine borane as a reducing agent. It is a silver layer formed by
The nickel layer 2 and the silver layer 3 constitute a second conductive layer b. Next, a method for manufacturing a ceramic capacitor according to the present invention will be explained. First, the first conductive layer a is applied by applying and baking a silver paste mixed with a lead borosilicate glass powder (frit), a resin, and a solvent onto the surface of the porcelain element 1. As this silver paste,
For example, a mixture of 75% metallic silver powder, 6% lead borosilicate glass frit, 19% cellulose resin binder and carbitol acetate is used, and selected on the required surface area of the porcelain body 1 by screen printing. Coat and then bake at 800℃. In this first conductive layer a, strong adhesion is achieved by reinforcing the bond between the porcelain body 1 and the first conductive layer a formed by baking silver with a lead borosilicate glass frit. After applying the first conductive layer a, dirt on the surface is removed using an emulsion degreaser. Furthermore, the surface was activated by immersing it in about 5% dilute sulfuric acid for 1 to 3 minutes, and after washing with water, it was soaked in palladium chloride 50 in a 5% ferrous chloride solution.
After immersing in a solution containing ppm at 20℃ for 1 to 2 minutes, washing with water, and then electroless plating using dimethylamine borane (DMAB) as a reducing agent at 50 to 55℃ for 1 hour. Perform metsuki. Nickel chloride (NiCl 2 6H 2 O) is used as an electroless plating solution.
30g/, sodium citrate (Na 3 C 6 H 5 O 7 .
2H 2 O) 60g/, ammonium chloride (NH 4 Cl)
30g/dimethylamine borane [(CH 3 ) 2 NHBH 3 ] 5g/adjusted to pH7.3 with sodium hydroxide was used. The provision of this nickel layer 2 provides the performance of a capacitor, but if it is left in the air, an oxide film will form on the nickel surface and the solderability will deteriorate, making it impractical. A silver layer 3 is applied onto the nickel layer 2 by boron-based electroless silver plating to improve solderability. In the electroless plating that provides the nickel layer 2, the precipitated nickel film is semi-photosensitive and the rate of passivation of the film is slow. and silver layer 3
can increase adhesion. After applying the nickel layer 2, it is thoroughly washed with water, and a silver layer 3 is applied at 50° C. for 15 minutes by electroless silver plating using dimethylamine borane as a reducing agent. As an electroless silver plating solution, 8.5g/of silver nitrate (AgNO 3 ), 7.35g/of sodium cyanide (NaCN), and 0.35g/of sodium borohydride (NaBH 4 ) are PH-treated with sodium hydroxide.
A solution adjusted to 13.0 was used. Thereafter, sufficient water washing is performed to form electrodes. Incidentally, the electroless plating of the nickel layer 2 and the silver layer 3 is not limited to the above ratio as long as it does not depart from the purpose of the present invention. Table 1 shows the characteristics of the ceramic capacitor according to the present invention after being immersed in molten solder at 300° C. for 1 minute (capacitance change rate with respect to the value before being immersed in solder and tensile strength between electrodes and elements after being immersed in solder).
【表】【table】
本発明は、上述の如く構成されているので、次
の如き作用効果を奏する。
第一導電層上に、ニツケル層と銀層とから成る
第二導電層を付与してあるので、半田浸漬時に表
層の銀が一部半田中に拡散したとしても、下層の
ニツケル層が表面が酸化されていないため、半田
付性が良好である。又、半田付工程で300℃の溶
融半田中に1分間以上浸漬しても、電極の密着強
度の劣化や静電容量の減少、tanδの劣化は殆ど
生じない。更に、電極と磁器素体間の密着強度を
得るのに磁器素体表面の粗面化(エツチング)を
必要とせず、又、磁器素体表面の必要面積の選択
的電極形成にセンターレス研磨又はカツテイング
等の煩雑な工程を必要とせず、スクリーン印刷法
等の公知の手段がそのまま使用できる。又、第二
導電層付与に於てはすべてホウ素系無電解メツキ
法を使用しているため、電気メツキの時のような
通電性を問題とせず、量産性に適し、産業上の有
用性大である。
Since the present invention is configured as described above, it has the following effects. Since the second conductive layer consisting of a nickel layer and a silver layer is provided on the first conductive layer, even if some of the silver on the surface layer diffuses into the solder during solder immersion, the surface layer of the lower nickel layer will remain intact. Since it is not oxidized, it has good solderability. Furthermore, even if the electrode is immersed in molten solder at 300° C. for one minute or more during the soldering process, there is almost no deterioration in the adhesion strength of the electrode, a decrease in capacitance, or a deterioration in tan δ. Furthermore, it is not necessary to roughen (etch) the surface of the porcelain element to obtain the adhesion strength between the electrode and the porcelain element, and centerless polishing or No complicated steps such as cutting are required, and known means such as screen printing can be used as is. In addition, since a boron-based electroless plating method is used to apply the second conductive layer, there is no problem with conductivity as with electroplating, making it suitable for mass production and highly useful in industry. It is.
図面は本発明の一実施例を示す側断面図であ
る。
1……磁器素体、2……ニツケル層、3……銀
層、a……第一導電層、b……第二導電層。
The drawing is a side sectional view showing one embodiment of the present invention. DESCRIPTION OF SYMBOLS 1... Porcelain element body, 2... Nickel layer, 3... Silver layer, a... First conductive layer, b... Second conductive layer.
Claims (1)
し、この第一導電層上にジメチルアミンボランを
還元剤とする無電解銀メツキ法により銀層を積層
して第二導電層を付与して成る電極を形成する磁
器コンデンサの製造方法に於て、第一導電層上に
ジメチルアミンボランを還元剤とする無電解銀メ
ツキ法により銀層を積層して第二導電層を付与す
る前に、第一導電層上にニツケルメツキ法により
ニツケル層を積層することを特徴とする磁器コン
デンサの製造方法。1 A first conductive layer is applied to the surface of the porcelain body by a silver baking method, and a second conductive layer is formed by laminating a silver layer on this first conductive layer by an electroless silver plating method using dimethylamine borane as a reducing agent. In a method of manufacturing a ceramic capacitor, in which an electrode is formed by depositing a silver layer on the first conductive layer by an electroless silver plating method using dimethylamine borane as a reducing agent, a second conductive layer is provided. 1. A method for manufacturing a ceramic capacitor, comprising: laminating a nickel layer on the first conductive layer by a nickel-metsuki method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11548378A JPS5541774A (en) | 1978-09-19 | 1978-09-19 | Porcelain condenser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11548378A JPS5541774A (en) | 1978-09-19 | 1978-09-19 | Porcelain condenser |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5541774A JPS5541774A (en) | 1980-03-24 |
| JPS621245B2 true JPS621245B2 (en) | 1987-01-12 |
Family
ID=14663628
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11548378A Granted JPS5541774A (en) | 1978-09-19 | 1978-09-19 | Porcelain condenser |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5541774A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5737814A (en) * | 1980-08-18 | 1982-03-02 | Nichicon Capacitor Ltd | Grain boundary insulating type semiconductor condenser |
| KR101018935B1 (en) * | 2009-03-19 | 2011-03-02 | 오영주 | Surface Mount High Voltage Ceramic Capacitor with Array Structure |
-
1978
- 1978-09-19 JP JP11548378A patent/JPS5541774A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5541774A (en) | 1980-03-24 |
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