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JPS6325493B2 - - Google Patents
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JPS6325493B2 - - Google Patents

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Publication number
JPS6325493B2
JPS6325493B2 JP55028364A JP2836480A JPS6325493B2 JP S6325493 B2 JPS6325493 B2 JP S6325493B2 JP 55028364 A JP55028364 A JP 55028364A JP 2836480 A JP2836480 A JP 2836480A JP S6325493 B2 JPS6325493 B2 JP S6325493B2
Authority
JP
Japan
Prior art keywords
electroless plating
element body
plating layer
electrode
catalyst
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55028364A
Other languages
Japanese (ja)
Other versions
JPS56124223A (en
Inventor
Hiroshi Tsuyuki
Akira Sasaki
Junichi Ideguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TDK Corp
Original Assignee
TDK Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by TDK Corp filed Critical TDK Corp
Priority to JP2836480A priority Critical patent/JPS56124223A/en
Publication of JPS56124223A publication Critical patent/JPS56124223A/en
Publication of JPS6325493B2 publication Critical patent/JPS6325493B2/ja
Granted legal-status Critical Current

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  • Ceramic Capacitors (AREA)
  • Apparatuses And Processes For Manufacturing Resistors (AREA)
  • Non-Adjustable Resistors (AREA)
  • Thermistors And Varistors (AREA)
  • Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
  • Manufacturing Of Printed Wiring (AREA)

Description

【発明の詳細な説明】 本発明は、セラミツク基板等より成る素体の表
面に無電解メツキによる電極を形成する方法に関
する。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method of forming electrodes by electroless plating on the surface of an element body made of a ceramic substrate or the like.

磁器コンデンサ、正特性サーミスタもしくはバ
リスタ等の酸化物磁器半導体またはIC基板の配
線パターン等の各種の電子部品に電極を形成する
方法として、従来より、ニツケル、銅等の卑金属
を主成分とする無電解メツキ法が知られている。
この無電解メツキ法は、高価な銀の代用としてコ
ストダウンを図るため、あるいは素体の有する電
気的特性を有効に引き出すため等に採用されるも
のであるが、無電解メツキ層の密着性向上のた
め、予め素体の電極形成領域を活性化させる必要
がある。従来は、この素体の活性化にあたつて、
塩化パラジウムPdCl2、塩化錫SnCl2等の溶液中
に素体を浸漬し、これによつて素体の表面に付着
したパラジウムPdもしくは錫Snをメツキ反応の
触媒として作用させるようにしてあつた。第1図
a〜eはこの従来の電極形成方法を説明するため
の図である。
As a method for forming electrodes on various electronic components such as oxide ceramic semiconductors such as ceramic capacitors, positive temperature coefficient thermistors, or varistors, or wiring patterns of IC boards, electroless methods mainly composed of base metals such as nickel and copper have been used. The Metsuki method is known.
This electroless plating method is used to reduce costs by substituting for expensive silver, or to effectively bring out the electrical properties of the element, but it also improves the adhesion of the electroless plating layer. Therefore, it is necessary to activate the electrode forming region of the element body in advance. Conventionally, when activating this elemental body,
The element body was immersed in a solution of palladium chloride PdCl 2 , tin chloride SnCl 2 , etc., so that the palladium Pd or tin Sn attached to the surface of the element body acted as a catalyst for the plating reaction. FIGS. 1a to 1e are diagrams for explaining this conventional electrode forming method.

まず、表面の粗面化、洗浄、脱脂、乾燥、鋭敏
化等の前処理を施した素体1(第1図a)を、
PdCl2またはSnCl2等の溶液2中に浸漬(第1図
b)して、素体1の全表面を活性化する。前記
PdCl2またはSnCl2溶液2は、濃度が0.01〜0.05%
程度の希薄水性溶液であり、素体1はこの溶液2
中に25℃の温度条件で1〜2分間浸漬する。この
後、素体1を溶液2中から引き上げると、素体1
の全面に、メツキ反応の開始剤となるPdCl2また
はSnCl2等の触媒剤3が付着する(第1図c)。
こうして得られた素体1をニツケルまたは銅等を
主成分とする無電解メツキ浴4中に浸漬(第1図
d)すると、素体1の全表面に付着している
PdCl2またはSnCl2がメツキ反応の触媒剤となり、
素体1の全表面に無電解メツキ層5が付着する
(第1図e)。
First, the element body 1 (Fig. 1 a), which has been subjected to pre-treatments such as surface roughening, cleaning, degreasing, drying, and sensitization, is
The entire surface of the element body 1 is activated by immersing it in a solution 2 such as PdCl 2 or SnCl 2 (FIG. 1b). Said
PdCl2 or SnCl2 solution 2 has a concentration of 0.01-0.05%
It is a dilute aqueous solution of about
Immerse in the liquid for 1 to 2 minutes at a temperature of 25°C. After this, when element body 1 is pulled up from solution 2, element body 1
A catalytic agent 3 such as PdCl 2 or SnCl 2 that serves as an initiator for the plating reaction is deposited on the entire surface (Fig. 1c).
When the element body 1 thus obtained is immersed in an electroless plating bath 4 containing nickel or copper as the main component (Fig. 1d), the elements adhere to the entire surface of the element body 1.
PdCl 2 or SnCl 2 serves as a catalyst for the plating reaction,
An electroless plating layer 5 is deposited on the entire surface of the element body 1 (FIG. 1e).

次に、洗浄、乾燥工程等を通した後、メツキ層
5の不要部分を化学的エツチング法またはセンタ
レス研磨法(第1図f)等によつて除去して所定
の電極パターンとした後、洗浄、熱処理等の必要
な工程を通し、メツキ層5の上に錫、ハンダメツ
キ層を施して半田付け性を向上させ、更に洗浄、
乾燥工程を経て完成する。
Next, after passing through a cleaning and drying process, unnecessary portions of the plating layer 5 are removed by chemical etching or centerless polishing (FIG. 1f) to form a predetermined electrode pattern, and then cleaning is performed. Through necessary processes such as heat treatment, a tin and solder plating layer is applied on top of the plating layer 5 to improve solderability, and further cleaning,
Completed after a drying process.

上述の如く、従来は、素体の活性化にあたつ
て、PdCl2またはSnCl2溶液中に素体を浸漬し、
素体の全表面に無電解メツキ層を形成する方法を
採用していたため、電極形成領域のみに限定した
部分選択メツキが不可能であつて、無電解メツキ
処理後に、不要なメツキ層を化学的エツチングま
たはセンタレス研磨等によつて除去せざるを得な
かつた。このため、従来の電極形成方法には、次
のような欠点があつた。
As mentioned above, conventionally, when activating the element body, the element body is immersed in a PdCl 2 or SnCl 2 solution,
Because the method used was to form an electroless plating layer on the entire surface of the element, selective plating limited only to the electrode formation area was impossible. It had to be removed by etching or centerless polishing. Therefore, the conventional electrode forming method has the following drawbacks.

(1) 不要なメツキ層の除去工程、活性化工程に入
るための前処理工程等、工程数が多く、製造コ
ストが高くつく。
(1) The manufacturing cost is high due to the large number of steps, such as the process of removing unnecessary plating layers and the pretreatment process before entering the activation process.

(2) センタレス研磨またはサンドブレスト等によ
り不要なメツキ層5を削除する場合、金属層た
るメツキ層5を機械的に直接削除することとな
るため、メツキ層5の界面剥離、接着強度の低
下、それに伴う経時的劣化、素体1の破損もし
くは割れ、またはマイクロラツクの発生等を招
き易く、信頼性の高いものを歩留まりよく製造
することが非常に困難であつた。特に素体が薄
い場合には機械的強度の不足から、製品化を断
念せざるを得ない場合もあつた。
(2) When unnecessary plating layer 5 is removed by centerless polishing or sandblasting, etc., the plating layer 5, which is a metal layer, is directly removed mechanically, so interfacial peeling of the plating layer 5, decrease in adhesive strength, This tends to cause deterioration over time, breakage or cracking of the element body 1, generation of microracks, etc., and it has been extremely difficult to manufacture highly reliable products at a high yield. Particularly in cases where the element body is thin, commercialization has sometimes had to be abandoned due to a lack of mechanical strength.

(3) センタレス研磨にあたつては、第1図fに示
すように、10〜15個程度の素体1をパラフイン
等の接着剤6を用いて一連に連結し、この状態
でセンタレス研磨を行なうのが通例であるが、
このような手段を講じても、メツキ層5が直接
削除されることに変りはないので、前述の諸欠
点は除去できず、却つて工程の煩しさや、メツ
キ層5の損傷、メツキ層5間の展延、絡みによ
る素体1の分離困難性等を招き易い。
(3) For centerless polishing, as shown in Figure 1f, approximately 10 to 15 elements 1 are connected in a series using an adhesive 6 such as paraffin, and centerless polishing is performed in this state. It is customary to do
Even if such measures are taken, the plating layer 5 will still be removed directly, so the above-mentioned drawbacks will not be removed, and instead the process will be complicated, damage to the plating layer 5, and the plating layer 5 will be removed. This tends to cause difficulty in separating the element body 1 due to the spread and entanglement of the particles.

(4) 化学的エツチング法によつてメツキ層5の不
要部分を除去する場合には、エツチング処理工
程が多く、製造コストアツプを招くうえに、エ
ツチング液等により素体1が損傷を受け、電気
的諸特性の劣化を招き易い。
(4) When unnecessary parts of the plating layer 5 are removed using a chemical etching method, there are many etching steps, which increases manufacturing costs. This tends to lead to deterioration of various properties.

(5) 素体1上に単純に無電解メツキを施す方法で
あるため、メツキ層5の接着強度が弱く、また
メツキ液の残留イオンがメツキ層5と素体1と
の界面に介在し、メツキ層5の剥離、それによ
る電気的諸特性の劣化もしくは経時的劣化等を
招き易い。また正特性サーミスタでは、オーミ
ツクコンタクトを得るため、メツキ層5の上に
フリツト含有銀焼付電極を形成してメツキ層5
の接着強度を向上させると共に、経時的劣化を
防止し、半田付け性を向上させる方法も提案さ
れているが、銀は資源的に有限であり、また最
近著るしく値上りしており、大幅なコストアツ
プを招く。
(5) Since this method simply performs electroless plating on the element body 1, the adhesive strength of the plating layer 5 is weak, and residual ions of the plating solution are present at the interface between the plating layer 5 and the element body 1. This tends to cause peeling of the plating layer 5, resulting in deterioration of various electrical characteristics or deterioration over time. In addition, in the positive temperature coefficient thermistor, in order to obtain ohmic contact, a frit-containing silver baked electrode is formed on the plating layer 5.
Methods have been proposed to improve the adhesive strength of silver, prevent deterioration over time, and improve solderability, but silver is a finite resource and has recently increased in price, so This results in increased costs.

本発明は上述する従来の諸欠点を一掃し、メツ
キ層の除去工程を必要とすることなく、素体の電
極形成領域に直接的に所定パターンの無電解メツ
キ層を形成することができ、工程数が少なく経済
的で、しかも信頼性の高い電極を形成し得る電極
形成方法を提供することを目的とする。
The present invention eliminates the above-mentioned conventional drawbacks, and makes it possible to form an electroless plating layer in a predetermined pattern directly on the electrode formation area of the element body without requiring a plating layer removal process. It is an object of the present invention to provide an electrode forming method that is economical with a small number of electrodes and can form highly reliable electrodes.

上記目的を達成するため、本発明に係る電子部
品の電極形成方法は、素体の表面に無電解メツキ
層より成る電極を形成する場合に、前記素体の電
極形成領域に、ガラス質フリツトを含有し前記無
電解メツキ反応の触媒となる触媒ペーストを塗布
し、その後に無電解メツキ処理を施すことを特徴
とする。
In order to achieve the above object, the method for forming an electrode of an electronic component according to the present invention includes, when forming an electrode made of an electroless plating layer on the surface of an element body, a glass frit is applied to the electrode formation region of the element body. The present invention is characterized in that a catalyst paste containing the catalytic material and serving as a catalyst for the electroless plating reaction is applied, and then electroless plating treatment is performed.

以下実施例たる添付図面を参照し、本発明の内
容を具体的に説明する。第2図a〜dは本発明に
係る電子部品の電極形成方法の工程を示す図であ
る。
DESCRIPTION OF THE PREFERRED EMBODIMENTS The content of the present invention will be specifically described below with reference to the accompanying drawings, which are examples. FIGS. 2a to 2d are diagrams showing the steps of the method for forming electrodes of electronic components according to the present invention.

所定の形状となるように形成された素体1(第
2図a)の両面の電極形成領域に、ガラス質フリ
ツト無電解メツキ反応の触媒となる触媒ペースト
7を、所定パターンとなるように、たとえばスク
リーン印刷等の手段によつて塗布する。前記触媒
ペースト7は、従来のPdCl2、SnCl2より成る触
媒溶液と同量のPdまたはSnを含有するペースト
であることが望ましい。具体的には、たとえば99
%のペーストラツカ1%のPdキレート(エチレ
ンジアミン四酢酸パラジウム)、Pd脂肪酸塩また
は塩化錫を混合したペースト等が適当である。
Catalyst paste 7, which serves as a catalyst for the glass frit electroless plating reaction, is applied in a predetermined pattern to the electrode forming regions on both sides of the element body 1 (FIG. 2a), which has been formed to have a predetermined shape. For example, it is applied by means such as screen printing. The catalyst paste 7 is preferably a paste containing the same amount of Pd or Sn as a conventional catalyst solution consisting of PdCl 2 and SnCl 2 . Specifically, for example 99
A paste containing 1% of Pd chelate (palladium ethylenediaminetetraacetate), Pd fatty acid salt, or tin chloride is suitable.

次に、触媒ペースト7を塗布した素体1を通炉
し、300℃前後の温度条件で、10〜60分間位加熱
することにより、触媒ペースト7の有機物を分解
遊離させると共に、Pd、Sn等の金属成分を素体
1の表面に焼付ける。この場合、予め触媒ペース
ト7に硼けい酸鉛ガラス粉末等のガラス質フリツ
トを微量添加してあるので、周知のフリツト含有
銀ペーストの焼付の場合と同様に、素体界面にフ
リツトが密着し、Pd、Sn等の金属成分を、溶解
したフリツトにより、素体1上に強固に密着させ
ることができる。
Next, the element body 1 coated with the catalyst paste 7 is passed through a furnace and heated at a temperature of around 300°C for about 10 to 60 minutes, thereby decomposing and liberating the organic matter in the catalyst paste 7, as well as Pd, Sn, etc. A metal component of is baked onto the surface of the element body 1. In this case, since a small amount of vitreous frit such as lead borosilicate glass powder is added to the catalyst paste 7 in advance, the frit adheres to the interface of the element body, as in the case of baking a well-known frit-containing silver paste. Metal components such as Pd and Sn can be firmly adhered to the element body 1 by the melted frit.

次に、素体1をたとえば1%の塩酸水溶液に10
分間程度浸漬して活性化し、更に水洗した後、無
電解メツキ浴8中に浸漬する(第2図c)。無電
解メツキ浴8は、基本的に、従来より良く知られ
ている組成のニツケル系または銅系のもので良
い。ニツケル系の無電解メツキ浴としては、塩化
ニツケル−次亜燐酸ナトリウム−ヒドロキシン酢
酸ナトリウム浴、塩化ニツケル−次亜燐酸ナトリ
ウム−クエン酸ナトリウム浴、硫酸ニツケル−次
亜燐酸ナトリウム−酢酸ナトリウム浴、塩化ニツ
ケル−次亜燐酸ナトリウム−コハク酸ナトリウム
浴が適当であり、また銅系の無電解メツキ浴とし
ては、硫酸銅−酒石酸ナトリウム浴や硫酸銅−
EDTAナトリウム浴が適当である。
Next, element body 1 is added to a 1% hydrochloric acid aqueous solution for 10
After being immersed for about a minute to activate, and further washed with water, it is immersed in an electroless plating bath 8 (FIG. 2c). The electroless plating bath 8 may basically be a nickel-based or copper-based bath having a composition well known in the art. Nickel-based electroless plating baths include nickel chloride-sodium hypophosphite-sodium hydroxyl acetate bath, nickel chloride-sodium hypophosphite-sodium citrate bath, nickel sulfate-sodium hypophosphite-sodium acetate bath, and nickel chloride-sodium hypophosphite-sodium acetate bath. A nickel-sodium hypophosphite-sodium succinate bath is suitable; copper-based electroless plating baths include a copper sulfate-sodium tartrate bath and a copper sulfate-sodium plating bath.
A sodium EDTA bath is suitable.

これらの無電解メツキ浴に、素体1を浴温80〜
90℃程度の温度条件で、5〜30分間位浸漬する。
この場合、素体1の電極形成領域上に設けた触媒
ペースト塗布部分は、素体1の表面に焼付けてあ
るPd、Sn等の金属成分が無電解メツキ反応の触
媒として働くので、この部分には無電解メツキ層
が析出するが、触媒ペーストを塗布しなかつた他
の部分には無電解メツキ層が析出することができ
ず、したがつて、電極形成領域にのみ選択的に無
電解メツキ層9が形成されることとなる(第1図
d)。
Place element 1 in these electroless plating baths at a bath temperature of 80~
Soak at a temperature of about 90°C for about 5 to 30 minutes.
In this case, metal components such as Pd and Sn baked on the surface of the element 1 act as catalysts for the electroless plating reaction, so the catalyst paste applied area provided on the electrode formation area of the element 1 is Although the electroless plating layer is deposited in the area where the catalyst paste is not applied, the electroless plating layer cannot be deposited on other parts where the catalyst paste is not applied. 9 will be formed (FIG. 1d).

このようにして、電極形成領域にのみメツキ層
9を選択的に形成し、更に水洗し、乾燥させた
後、密着力を向上させる目的でN2雰囲気中で、
400℃前後の温度条件で、1時間程度、熱処理す
る。これにより、素体1の表面に付着していたフ
リツトが再度溶解し、この溶解したフリツトによ
り、メツキ液の残留イオンが界面に残ることな
く、メツキ層9が素体1の表面に強固に密着さ
れ、電極の界面剥離や電気的特性の劣化、経時的
劣化が有効に防止される。
In this way, the plating layer 9 was selectively formed only in the electrode forming area, and after further washing with water and drying, the plating layer 9 was formed in an N 2 atmosphere for the purpose of improving adhesion.
Heat treatment is performed at a temperature of around 400℃ for about 1 hour. As a result, the frit that had adhered to the surface of the element 1 is dissolved again, and the melted frit allows the plating layer 9 to firmly adhere to the surface of the element 1 without residual ions of the plating solution remaining on the interface. This effectively prevents interfacial peeling of the electrodes, deterioration of electrical characteristics, and deterioration over time.

以上の工程を経て、本発明に係る電子部品は、
電極にリード線を半田付けできる状態となるが、
更に半田付け条件に応じてメツキ層9上に錫、半
田メツキを施して半田付け性を向上させた後、洗
浄し、乾燥させてもよい。このように、メツキ層
9上に錫・半田メツキを施す構造であると、銀焼
付けの場合に比較して遥かに安価で、しかも半田
付け性に優れた電極構造とすることができる。
Through the above steps, the electronic component according to the present invention is
Now you can solder the lead wire to the electrode.
Furthermore, tin and solder plating may be applied to the plating layer 9 according to the soldering conditions to improve solderability, followed by washing and drying. In this way, the structure in which tin/solder plating is applied on the plating layer 9 can provide an electrode structure that is much cheaper than silver baking and has excellent solderability.

以上述べたように、本発明に係る電子部品の電
極形成方法は、素体の表面に無電解メツキ層より
成る電極を形成する場合に、前記素体の電極形成
領域に、ガラス質フリツトを含有し前記無電解メ
ツキ反応の触媒となる触媒ペーストを塗布し、そ
の後に無電解メツキ処理を施すことを特徴とする
から、次のような効果がある。
As described above, in the method for forming an electrode of an electronic component according to the present invention, when forming an electrode made of an electroless plating layer on the surface of an element body, the electrode formation region of the element body contains glass frit. Since the method is characterized in that a catalyst paste serving as a catalyst for the electroless plating reaction is applied and then an electroless plating treatment is performed, the following effects can be obtained.

(1) 電極形成領域に限つて、部分選択的に無電解
メツキを施すことができる。この結果、 (イ) 無電解メツキ層の不要部分を除去する工程
が不要となり、工程数が減少し、量産性が向
上し、製造コストが低下する。
(1) Electroless plating can be applied selectively only to the electrode formation area. As a result, (a) the step of removing unnecessary portions of the electroless plating layer becomes unnecessary, the number of steps is reduced, mass productivity is improved, and manufacturing costs are reduced.

(ロ) センタレス研磨等に見られたような、メツ
キ層の界面剥離、接着強度の低下、経時的劣
化、素体の破損または割れ、マイクロクラツ
クの発生等の各種トラブルを生じる余地がな
く、高信頼度のものを歩留まり良く製造する
ことができる。
(b) There is no room for various problems such as interfacial peeling of the plating layer, decrease in adhesive strength, deterioration over time, damage or cracking of the element body, and generation of micro-cracks, as seen in centerless polishing, etc. Highly reliable products can be manufactured with good yield.

(ハ) 素体の厚みが薄くなつても、何らの障害も
なく、無電解メツキ層による電極を形成する
ことができる。
(c) Even if the thickness of the element body becomes thinner, electrodes can be formed using electroless plating layers without any problems.

(ニ) 化学的エツチング処理工程に見られるよう
な素体の損傷を生じる余地がない。
(d) There is no possibility of damage to the element as seen in chemical etching processes.

(2) 触媒ペーストにガラス質フリツトを含有させ
ることにより、素体に対するメツキ層の密着強
度を向上させ、界面剥離、経時的劣化等を有効
に防止することができる。しかも、従来の銀焼
付方法による密着強度の向上の場合に比較し
て、遥かに安価になる。
(2) By including glassy frit in the catalyst paste, the adhesion strength of the plating layer to the element body can be improved, and interfacial peeling, deterioration over time, etc. can be effectively prevented. Moreover, it is much cheaper than the case of improving adhesion strength using the conventional silver baking method.

(3) 実施例に示したように、メツキ層上の錫・半
田メツキを施すことにより、従来の銀焼付方法
に比較して遥かに安価で、半田付け性に優れた
電極を形成することができる。
(3) As shown in the example, by applying tin/solder plating on the plating layer, it is possible to form electrodes with excellent solderability at a much lower cost than the conventional silver baking method. can.

(4) 銀を使用していないので、シルバーマイグレ
ーシヨンや半田喰われ現象等を生じる余地がな
く、信頼性が向上する。
(4) Since no silver is used, there is no possibility of silver migration or solder eating phenomena, improving reliability.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図a〜fは従来の電子部品の電極形成方法
を示す図、第2図は本発明に係る電子部品の電極
形成方法を示す図である。 1……素体、7……触媒ペースト、9……無電
解メツキ層。
1A to 1F are diagrams showing a conventional method of forming electrodes of electronic components, and FIG. 2 is a diagram showing a method of forming electrodes of electronic components according to the present invention. 1...Element body, 7...Catalyst paste, 9...Electroless plating layer.

Claims (1)

【特許請求の範囲】 1 素体の表面に無電解メツキ層より成る電極を
形成する場合に、前記素体の電極形成領域に、ガ
ラス質フリツトを含有し前記無電解メツキ反応の
触媒となる触媒ペーストを塗布し、その後に無電
解メツキ処理を施すことを特徴とする電子部品の
電極形成法。 2 前記触媒ペーストはパラジウムのキレートま
たは脂肪酸塩を含有することを特徴とする特許請
求の範囲第1項に記載の電子部品の電極形成法。 3 前記触媒ペーストは塩化錫を含有することを
特徴とする特許請求の範囲第1項に記載の電子部
品の電極形成法。 4 無電解メツキ処理を施した後、該無電解メツ
キ層上に錫・半田メツキを施すことを特徴とする
特許請求の範囲第1項、第2項または第3項に記
載の電子部品の電極形成法。
[Scope of Claims] 1. When an electrode consisting of an electroless plating layer is formed on the surface of an element body, a catalyst containing glassy frit and serving as a catalyst for the electroless plating reaction is provided in the electrode formation region of the element body. A method for forming electrodes for electronic components, which is characterized by applying a paste and then performing electroless plating. 2. The method of forming an electrode for an electronic component according to claim 1, wherein the catalyst paste contains a palladium chelate or a fatty acid salt. 3. The method for forming an electrode for an electronic component according to claim 1, wherein the catalyst paste contains tin chloride. 4. An electrode for an electronic component according to claim 1, 2 or 3, characterized in that after electroless plating treatment, tin/solder plating is performed on the electroless plating layer. Formation method.
JP2836480A 1980-03-05 1980-03-05 Method of forming electrode for electronic part Granted JPS56124223A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2836480A JPS56124223A (en) 1980-03-05 1980-03-05 Method of forming electrode for electronic part

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2836480A JPS56124223A (en) 1980-03-05 1980-03-05 Method of forming electrode for electronic part

Publications (2)

Publication Number Publication Date
JPS56124223A JPS56124223A (en) 1981-09-29
JPS6325493B2 true JPS6325493B2 (en) 1988-05-25

Family

ID=12246562

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2836480A Granted JPS56124223A (en) 1980-03-05 1980-03-05 Method of forming electrode for electronic part

Country Status (1)

Country Link
JP (1) JPS56124223A (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57187925A (en) * 1981-05-14 1982-11-18 Murata Manufacturing Co Ceramic condenser
DE3143995A1 (en) * 1981-11-05 1983-05-19 Preh, Elektrofeinmechanische Werke, Jakob Preh, Nachf. Gmbh & Co, 8740 Bad Neustadt THICK FILM CAPACITOR IN PRESSURE SWITCHING TECHNOLOGY
JPS592126U (en) * 1982-06-28 1984-01-09 ティーディーケイ株式会社 non-isolated capacitor
JPS60107801A (en) * 1983-11-16 1985-06-13 コーア株式会社 Chip resistor and method of producing same
JPH0220093A (en) * 1988-07-08 1990-01-23 Tdk Corp Electrode provided on high frequency dielectric ceramics and manufacture thereof
JPH0284701A (en) * 1989-08-24 1990-03-26 Nippon Denso Co Ltd Formation of electrode of positive temperature coefficient porcelain semiconductor

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5347340A (en) * 1976-10-13 1978-04-27 Mitsubishi Heavy Ind Ltd Salt bath treating means
JPS5426459A (en) * 1977-07-29 1979-02-28 Matsushita Electric Industrial Co Ltd Method of forming electrode terminals for tip parts
JPS56116613A (en) * 1980-02-19 1981-09-12 Matsushita Electric Industrial Co Ltd Method of manufacturing ceramic electronic part
JPS56118322A (en) * 1980-02-21 1981-09-17 Matsushita Electric Industrial Co Ltd Method of manufacturing ceramic condenser

Also Published As

Publication number Publication date
JPS56124223A (en) 1981-09-29

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