JPS6214223B2 - - Google Patents
Info
- Publication number
- JPS6214223B2 JPS6214223B2 JP59205869A JP20586984A JPS6214223B2 JP S6214223 B2 JPS6214223 B2 JP S6214223B2 JP 59205869 A JP59205869 A JP 59205869A JP 20586984 A JP20586984 A JP 20586984A JP S6214223 B2 JPS6214223 B2 JP S6214223B2
- Authority
- JP
- Japan
- Prior art keywords
- rotating shaft
- reaction chamber
- wafer support
- magnetic fluid
- seal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、気相成長装置に係り、特に反応室内
に位置するウエハ支持体の回転駆動部の構造に関
するものである。DETAILED DESCRIPTION OF THE INVENTION [Industrial Field of Application] The present invention relates to a vapor phase growth apparatus, and particularly to the structure of a rotation drive section of a wafer support located within a reaction chamber.
バレル型の気相成長装置は、第2図に示すよう
に、鉛直に配置した反応管1内に回転軸2によつ
て支持したサセプタなどのウエハ支持体3を位置
させ、反応管1の外側に設けたRFコイルなどの
加熱源(以下RFコイルという)4によりウエハ
支持体3を発熱させてその表面にセツトされてい
るウエハ5を加熱し、ノズル6から反応ガスを供
給してウエハ5の表面に気相成長層を形成するよ
うになつている。前記ウエハ支持体3は、ウエハ
5を均一に加熱するため、モータ7から歯車8,
9,10,11ならびに前記回転軸2を介して回
転されるようになつており、また従来、回転軸2
は中空軸になされてその中を温度センサ12が貫
通し、ウエハ支持体3の温度を検出するようにな
つていた。ところで、反応管1と、その上にシー
ル13を介して載置されたガスリング14ならび
にシール15を介して被せられるフタ16によつ
て形成される反応室17内にはノズル6から反応
ガスやエツチングガスなどの有毒ガスが供給され
るため、反応室17を外部に対して気密にシール
する必要があるが、従来は前記のように回転軸2
が中空でその中を温度センサ12が通つているの
で、この回転軸2の部分におけるシールができ
ず、このため第2図に示すように、フタ16上に
シール18を介して回転軸2の外方端部および歯
車10,11を被うカバー19を設け、このカバ
ー19を貫通して外から内へ回転を伝達する歯車
9と歯車10との間に磁性流体シール20を設け
ると共に、温度センサ12の元端部とカバー19
との間にシール21を設けてカバー19内の空間
22を外部に対して気密にし、反応室17内のガ
スがカバー19内の空間22には漏れることがあ
つても、それ以上外部へは漏れないように構成し
ていた。なお、23はページガスの導入管であ
る。
As shown in FIG. 2, in a barrel-type vapor phase growth apparatus, a wafer support 3 such as a susceptor supported by a rotating shaft 2 is positioned inside a vertically arranged reaction tube 1, and the outside of the reaction tube 1 is A heating source 4 such as an RF coil (hereinafter referred to as RF coil) installed in the wafer support 3 generates heat to heat the wafer 5 set on the surface of the wafer support 3, and reactant gas is supplied from the nozzle 6 to heat the wafer 5. A vapor phase growth layer is formed on the surface. The wafer support 3 is connected to a motor 7, a gear 8,
9, 10, 11 and the rotating shaft 2, and conventionally, the rotating shaft 2
was formed into a hollow shaft through which a temperature sensor 12 penetrated to detect the temperature of the wafer support 3. By the way, a reaction gas or Since toxic gas such as etching gas is supplied, it is necessary to seal the reaction chamber 17 airtight from the outside.
Since it is hollow and the temperature sensor 12 passes through it, it is impossible to seal this part of the rotating shaft 2. Therefore, as shown in FIG. A cover 19 is provided that covers the outer end and the gears 10, 11, and a magnetic fluid seal 20 is provided between the gear 9 and the gear 10 that passes through the cover 19 to transmit rotation from the outside to the inside. The base end of the sensor 12 and the cover 19
A seal 21 is provided between the cover 19 and the space 22 to make the space 22 inside the cover 19 airtight. It was designed to prevent leaks. Note that 23 is a page gas introduction pipe.
しかしながら、このような従来の構造では、前
記カバー19内にある歯車10,11および回転
軸2の軸受24などの回転に伴なつて生ずる摩耗
粉が、反応室17内に侵入して気相成長層に重大
な欠陥を発生させ、また、軸受24などに潤滑油
を使用すると、これが蒸発して気相成長層を汚染
するなどの問題があつた。
However, in such a conventional structure, abrasion powder generated as the gears 10 and 11 in the cover 19 and the bearing 24 of the rotating shaft 2 rotate enters the reaction chamber 17 and causes vapor phase growth. In addition, when lubricating oil was used for the bearing 24, etc., there were problems such as evaporation and contamination of the vapor growth layer.
本発明は、前述したような問題を解決するた
め、シールの障害となつていた中空の回転軸とそ
の中を貫通する温度センサとからなる二重構造を
改め、ウエハ支持体を連結する回転軸を中実軸と
し、この回転軸と反応室を形成する部材との間に
磁性流体シールを設け、回転軸の軸受を磁性流体
シールによつて仕切られた反応室の外側に配置す
る構造としたものである。
In order to solve the above-mentioned problems, the present invention has improved the dual structure consisting of a hollow rotating shaft and a temperature sensor that penetrates the hollow rotating shaft, which was an obstacle to sealing, and has replaced the rotating shaft that connects the wafer support. A solid shaft is used, a magnetic fluid seal is provided between the rotating shaft and the member forming the reaction chamber, and the bearing of the rotating shaft is placed outside the reaction chamber partitioned by the magnetic fluid seal. It is something.
本発明による回転軸およびそれに連結されたウ
エハ支持体は前記軸受によつて従来装置と同様に
回転可能に支持される。ただし、この軸受は磁性
流体シールによつて確実に仕切られた反応室の外
に位置するため、摩耗粉や潤滑油の蒸気は反応室
内には侵入しない。また、ウエハ支持体やウエハ
の測温は、例えば赤外線温度検出器などの温度セ
ンサを反応管外などに設けることにより行なわれ
る。
The rotating shaft according to the present invention and the wafer support connected thereto are rotatably supported by the bearing in the same manner as in the conventional apparatus. However, since this bearing is located outside the reaction chamber that is reliably partitioned by a magnetic fluid seal, wear particles and lubricating oil vapor do not enter the reaction chamber. Furthermore, the temperature of the wafer support and the wafer is measured by providing a temperature sensor such as an infrared temperature detector outside the reaction tube.
以下本発明の一実施例を示す第1図について説
明する。1は反応管、3はウエハ支持体、4は
RFコイル、5はウエハで、これらは第2図に示
した従来装置と同様である。反応管1の第1図に
おいて上端にはシール30を介してフタ31が開
閉可能に被せられ、このフタ31に複数本のノズ
ル32が取付けられている。ウエハ支持体3の上
部中央には軸33が設けられ、カツプリング34
を介して回転軸35が連結されている。この回転
軸35は中実軸である。36は磁性流体シール
で、通常は回転軸35と対をなして市販されてい
る。この磁性流体シール36は、シール37を介
してフタ31に取付けられている。回転軸35
は、第2図において磁性流体シール36の上方に
位置する軸受38によりフタ31に回転可能に支
持されている。回転軸35の上端には歯車39が
取付けられ、歯車40を介してモータ41により
回転を与えられるようになつている。なお、4
2,42は温度センサで、RFコイル4の間から
反応管1を通してウエハ5の温度を検出するよう
になつている。
FIG. 1 showing one embodiment of the present invention will be described below. 1 is a reaction tube, 3 is a wafer support, 4 is a
The RF coil and 5 are wafers, which are similar to the conventional device shown in FIG. In FIG. 1, the reaction tube 1 is covered with a lid 31 which can be opened and closed via a seal 30 at its upper end, and a plurality of nozzles 32 are attached to the lid 31. A shaft 33 is provided in the upper center of the wafer support 3, and a coupling 34 is provided.
A rotating shaft 35 is connected via. This rotating shaft 35 is a solid shaft. 36 is a magnetic fluid seal, which is usually sold as a pair with the rotating shaft 35 on the market. This magnetic fluid seal 36 is attached to the lid 31 via a seal 37. Rotating shaft 35
is rotatably supported by the lid 31 by a bearing 38 located above the magnetic fluid seal 36 in FIG. A gear 39 is attached to the upper end of the rotating shaft 35, and rotation is applied by a motor 41 via a gear 40. In addition, 4
Temperature sensors 2 and 42 detect the temperature of the wafer 5 through the reaction tube 1 between the RF coils 4.
次いでこの装置の動作を説明する。ウエハ支持
体3は、軸33、カツプリング34、回転軸3
5、軸受38を介してフタ31に回転可能に支持
されているため、モータ41により歯車40,3
9を介して従来と同様に回転駆動される。回転軸
35が貫通するフタ31の部分は、同フタ31と
磁性流体シール36の間がシール37によつて確
実に気密に仕切られ、回転軸35の周囲は磁性流
体シール36によつて確実に気密に仕切られてい
る。そこで、反応管1やフタ31によつて形成さ
れている反応室43は、外部に対して確実に気密
になされ、ノズル32から供給された反応ガスな
どが外部に漏れ出すことはない。また、逆に回転
軸35の周囲などから外気が反応室43内に侵入
することもなく、したがつて、軸受38や歯車3
9,40などから摩耗粉が生じても気相成長には
全く悪影響を及ぼさないと共に、潤滑油も自由に
使用することが可能である。 Next, the operation of this device will be explained. The wafer support 3 includes a shaft 33, a coupling 34, and a rotating shaft 3.
5. Since it is rotatably supported by the lid 31 via the bearing 38, the gears 40, 3 are driven by the motor 41.
9, it is rotationally driven in the same way as in the conventional case. In the part of the lid 31 through which the rotating shaft 35 passes, the lid 31 and the magnetic fluid seal 36 are reliably and airtightly partitioned by a seal 37, and the area around the rotating shaft 35 is securely partitioned by the magnetic fluid seal 36. It is airtightly partitioned. Therefore, the reaction chamber 43 formed by the reaction tube 1 and the lid 31 is reliably made airtight to the outside, and the reaction gas supplied from the nozzle 32 does not leak to the outside. Moreover, on the contrary, outside air does not enter into the reaction chamber 43 from around the rotating shaft 35, and therefore the bearing 38 and the gear 3
Even if abrasion powder is generated from 9, 40, etc., it does not have any adverse effect on vapor phase growth, and lubricating oil can also be freely used.
なお、フタ31には図示しない冷却流体の流路
を設け、フタ31自身および磁性流体シール3
6、軸受38、シール30,37などをできるだ
け低温に保つことが好ましく、さらに回転軸35
内にも流路を設け、ロータリージヨイント44を
介して冷却流体を循環させることにより回転軸3
5の昇温を防ぐことにより磁性流体シール36を
保護することが好ましい。 Note that the lid 31 is provided with a cooling fluid flow path (not shown), and the lid 31 itself and the magnetic fluid seal 3
6. It is preferable to keep the bearing 38, seals 30, 37, etc. as low as possible, and furthermore, the rotating shaft 35
A flow path is also provided inside the rotary shaft 3 by circulating the cooling fluid through the rotary joint 44.
Preferably, the ferrofluidic seal 36 is protected by preventing temperature rise of the ferrofluidic seal 36.
以上述べたように本発明によれば、ウエハ支持
体を連結している回転軸と反応室を形成する部材
との間で確実なシールができ、軸受や歯車などの
回転伝達部材は反応室から完全に切離されている
部分に位置されるため、これからの摩耗粉や潤滑
油の蒸気などが気相成長に悪影響を及ぼすことが
なく、第1図と第2図を比較すれば明らかなよう
に構造も簡単にできるなどの効果が得られる。
As described above, according to the present invention, a reliable seal can be established between the rotating shaft that connects the wafer support and the members forming the reaction chamber, and rotation transmission members such as bearings and gears are separated from the reaction chamber. Since it is located in a completely separated area, future wear debris and lubricating oil vapor will not have a negative effect on vapor phase growth, as is clear from comparing Figures 1 and 2. Effects such as easy structure can be obtained.
第1図は本発明の一実施例を示す概要断面図、
第2図は従来装置の概要断面図である。
1……反応管、3……ウエハ支持体、4……
RFコイル、5……ウエハ、30,37……シー
ル、31……フタ、35……回転軸、36……磁
性流体シール、38……軸受、39,40……歯
車、41……モータ、42,42……温度セン
サ、43……反応室、44……ロータリージヨイ
ント。
FIG. 1 is a schematic sectional view showing an embodiment of the present invention;
FIG. 2 is a schematic sectional view of a conventional device. 1...Reaction tube, 3...Wafer support, 4...
RF coil, 5... Wafer, 30, 37... Seal, 31... Lid, 35... Rotating shaft, 36... Magnetic fluid seal, 38... Bearing, 39, 40... Gear, 41... Motor, 42, 42...Temperature sensor, 43...Reaction chamber, 44...Rotary joint.
Claims (1)
に設けた駆動部により回転させるようにした気相
成長装置において、ウエハ支持体に連結されてい
る回転軸を中実軸とし、同回転軸と反応室を形成
する部材との間に磁性流体シールを設け、前記回
転軸を回転可能に支持する軸受を反応室に対して
前記磁性流体シールの外側に配置したことを特徴
とする気相成長装置。1 In a vapor phase growth apparatus in which a wafer support located inside a reaction chamber is rotated by a drive unit provided outside the reaction chamber, the rotation shaft connected to the wafer support is a solid shaft, and the reaction with the rotation shaft is A vapor phase growth apparatus characterized in that a magnetic fluid seal is provided between a member forming a chamber, and a bearing rotatably supporting the rotating shaft is disposed outside the magnetic fluid seal with respect to the reaction chamber.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20586984A JPS6184373A (en) | 1984-10-01 | 1984-10-01 | Vapor growth device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20586984A JPS6184373A (en) | 1984-10-01 | 1984-10-01 | Vapor growth device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6184373A JPS6184373A (en) | 1986-04-28 |
| JPS6214223B2 true JPS6214223B2 (en) | 1987-04-01 |
Family
ID=16514066
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20586984A Granted JPS6184373A (en) | 1984-10-01 | 1984-10-01 | Vapor growth device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6184373A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9279185B2 (en) * | 2012-06-14 | 2016-03-08 | Asm Technology Singapore Pte Ltd | Feed-through apparatus for a chemical vapour deposition device |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55104057A (en) * | 1979-02-02 | 1980-08-09 | Hitachi Ltd | Ion implantation device |
| JPS58213413A (en) * | 1982-06-04 | 1983-12-12 | Nippon Telegr & Teleph Corp <Ntt> | Device for semiconductor vapor growth |
-
1984
- 1984-10-01 JP JP20586984A patent/JPS6184373A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6184373A (en) | 1986-04-28 |
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