JPS6219506B2 - - Google Patents
Info
- Publication number
- JPS6219506B2 JPS6219506B2 JP22271583A JP22271583A JPS6219506B2 JP S6219506 B2 JPS6219506 B2 JP S6219506B2 JP 22271583 A JP22271583 A JP 22271583A JP 22271583 A JP22271583 A JP 22271583A JP S6219506 B2 JPS6219506 B2 JP S6219506B2
- Authority
- JP
- Japan
- Prior art keywords
- etching
- opening
- thin metal
- resist film
- metal plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000002184 metal Substances 0.000 claims description 29
- 229910052751 metal Inorganic materials 0.000 claims description 29
- 238000005530 etching Methods 0.000 claims description 27
- 238000000034 method Methods 0.000 claims description 15
- 239000013078 crystal Substances 0.000 description 10
- 229910000833 kovar Inorganic materials 0.000 description 9
- 229920002120 photoresistant polymer Polymers 0.000 description 9
- 239000011521 glass Substances 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910000531 Co alloy Inorganic materials 0.000 description 1
- KGWWEXORQXHJJQ-UHFFFAOYSA-N [Fe].[Co].[Ni] Chemical compound [Fe].[Co].[Ni] KGWWEXORQXHJJQ-UHFFFAOYSA-N 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
Landscapes
- ing And Chemical Polishing (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Description
【発明の詳細な説明】
技術分野
この発明は金属薄板のエツチング方法に関し、
より詳しくは音叉型水晶振動子用サポートリード
の製造に好適する金属薄板のエツチング方法に関
する。[Detailed Description of the Invention] Technical Field This invention relates to a method of etching a thin metal plate,
More specifically, the present invention relates to a method of etching a thin metal plate suitable for manufacturing support leads for a tuning fork crystal resonator.
従来技術
水晶振動子用気密端子は水晶片の形状やその保
持方法によつて各種の構造のものがある。Prior Art Hermetic terminals for crystal resonators have various structures depending on the shape of the crystal piece and the method of holding it.
第1図は特公昭57−50363号公報、特公昭58−
24968号公報、特開昭57−50177号公報等で開示さ
れている音叉型水晶片保持用の気密端子の断面図
を示し、第2図は要部の拡大正面図、第3図は第
2図の―線に沿う側面図を示す。図におい
て、1はコバール(鉄・ニツケル・コバルト合
金)等よりなる金属外環で、ホウケイ酸ガラス等
のガラス2を介してサポートリード3,4が気密
絶縁的に封着されている。これらのサポートリー
ド3,4は、前記ガラス2に封着される直線状の
リード部5,6と、略U字状に屈曲したサポート
部7,8とを備え、サポート部7,8の先端部7
a,8a間に微小間隙9が形成されており、この
微小間隙9に音叉型水晶片10を保持するように
なつている。 Figure 1 is published in Tokuko Publication No. 50363, No. 57-5036, and Special Publication No. 58-58-
24968, Japanese Patent Application Laid-open No. 57-50177, etc., are shown cross-sectional views of airtight terminals for holding tuning fork-shaped crystal pieces, and FIG. 2 is an enlarged front view of the main parts, and FIG. A side view taken along the line - in the figure is shown. In the figure, reference numeral 1 denotes a metal outer ring made of Kovar (iron-nickel-cobalt alloy) or the like, to which support leads 3 and 4 are hermetically and insulatively sealed via glass 2 such as borosilicate glass. These support leads 3 and 4 include straight lead parts 5 and 6 that are sealed to the glass 2 and support parts 7 and 8 that are bent into a substantially U-shape. Part 7
A minute gap 9 is formed between a and 8a, and a tuning fork type crystal piece 10 is held in this minute gap 9.
上記気密端子は、従来第4図ないし第7図の工
程を経て製造されている。まず、所定の大きさお
よび厚さtのコバール板11を用意する(第4
図)。次に、このコバール板11の表面全面にフ
オトレジスト膜12を塗布し、その上に所定パタ
ーンのマスクを重ね合せて露光、現像を行ない、
フオトレジスト膜12を所定パターンに形成する
(第5図)。こののち、全体をエツチング液に浸漬
して、前記フオトレジスト膜12で被覆されてい
ない部分をエツチング除去し、さらにフオトレジ
スト膜12を有機溶剤で溶解除去して、複数組の
サポートリード3,4が連結部13で一体化され
たリードフレーム14を製作する(第6図)。次
に、上記リードフレーム14を、グラフアイト製
の封着治具(図示せず)を用いて、金属外環1お
よびガラスタブレツト2′と共に所定の関係位置
に組み立てて、全体を中性または弱還元性雰囲気
中において約1000℃に加熱して、前記ガラスタブ
レツト2′を溶融せしめ、金属外環1内にガラス
2を介してサポートリード3,4が気密かつ絶縁
して封着された連結型封書体15を製造する(第
7図)。最後に第7図の一点鎖線16,17部分
でリードフレーム14を切断分離すると、第1図
ないし第3図に示すような気密端子が得られる。 The above-mentioned airtight terminal has conventionally been manufactured through the steps shown in FIGS. 4 to 7. First, a Kovar plate 11 of a predetermined size and thickness t is prepared (fourth
figure). Next, a photoresist film 12 is applied to the entire surface of this Kovar plate 11, a mask with a predetermined pattern is superimposed on it, and exposed and developed.
A photoresist film 12 is formed in a predetermined pattern (FIG. 5). After that, the whole is immersed in an etching solution to etch away the portions not covered with the photoresist film 12, and the photoresist film 12 is further dissolved and removed with an organic solvent, and the plurality of sets of support leads 3, 4 are removed. A lead frame 14 is manufactured in which the parts are integrated at the connecting part 13 (FIG. 6). Next, the lead frame 14 is assembled in a predetermined position with the metal outer ring 1 and the glass tablet 2' using a graphite sealing jig (not shown), and the whole is made of neutral or The glass tablet 2' was melted by heating to about 1000° C. in a weakly reducing atmosphere, and the support leads 3 and 4 were hermetically and insulated sealed inside the metal outer ring 1 via the glass 2. A connected envelope 15 is manufactured (FIG. 7). Finally, the lead frame 14 is cut and separated along the dashed lines 16 and 17 in FIG. 7 to obtain an airtight terminal as shown in FIGS. 1 to 3.
従来技術の欠点
ここで、第2図に示すサポート部7,8の各先
端部7a,8a間の微小間隙9の幅寸法Wは、水
晶片10の薄型化に伴つて非常に小さいものが要
求されるようになつてきている。ところが、リー
ド部5,6やサポート部7,8は機械的強度のた
めに所定の厚さ寸法tが必要であるが、この厚さ
寸法tのコバール板11をエツチング除去するた
めには、所定のエツチング時間が必要であり、こ
のエツチング時間内に横方向へのエツチングも進
行するため、前記微小間隙9の最低幅寸法Wは、
厚さ寸法tの影響を受け、W<1.3tの関係を満足
する微小間隙9を得ることはできなかつた。Disadvantages of the Prior Art Here, the width dimension W of the minute gap 9 between the tips 7a and 8a of the support parts 7 and 8 shown in FIG. 2 is required to be extremely small as the crystal piece 10 becomes thinner. This is becoming more and more common. However, the lead parts 5, 6 and the support parts 7, 8 need a predetermined thickness t for mechanical strength, but in order to remove the Kovar plate 11 with the thickness t by etching, it is necessary to have a predetermined thickness t. Etching time is required, and etching progresses in the lateral direction within this etching time.
Due to the influence of the thickness dimension t, it was not possible to obtain a minute gap 9 satisfying the relationship W<1.3t.
発明の目的
そこで、この発明は、金属薄板の厚さ寸法を
t、金属部材相互間の微小間隙の幅寸法をwとす
るとき、w<1.3tの関係を満足し得る微小間隙を
形成することができる金属薄板のエツチング方法
を提供することを目的とする。Purpose of the Invention Therefore, the present invention aims to form a minute gap that satisfies the relationship w<1.3t, where t is the thickness of a thin metal plate, and w is the width of a minute gap between metal members. The purpose of the present invention is to provide a method for etching a thin metal plate.
発明の構成
この発明は、金属薄板に微小間隙の形成予定部
分が開口した所定のパターンのレジスト膜を形成
する工程と、前記微小間隙の形成予定部分の開口
部から露出する金属薄板をエツチング除去する工
程と、前記レジスト膜を除去する工程とを含む金
属板のエツチング方法において、前記レジスト膜
の形成工程で、微小間隙の形成予定部分の開口部
の長さ方向の中途に、この開口部より幅広の大開
口部を有するレジスト膜を形成することを特徴と
するものである。Composition of the Invention The present invention includes a step of forming a resist film of a predetermined pattern in which a portion where a micro gap is to be formed is opened on a thin metal plate, and etching away the thin metal plate exposed from the opening in the portion where the micro gap is to be formed. and a step of removing the resist film, in the step of forming the resist film, a portion wider than the opening is formed midway along the length of the opening in the portion where the minute gap is to be formed. This method is characterized by forming a resist film having a large opening.
すなわち、従来金属薄板の厚さ方法tに対して
微小間隙の幅寸法WをW〓1.3tになし得なかつた
のは、レジスト膜の微小間隙の形成予定部分の開
口部の幅寸法Wが小さくなると、この開口部より
金属薄板に対して供給されるエツチヤント量が少
なく、金属薄板の厚さ方向のエツチング速度が小
さくなり、長いエツチング時間を必要とするた
め、横方向エツチングが生じやすいことに起因し
ていた。 In other words, the reason why it was not possible to make the width W of the microgap W = 1.3t for the thickness method t of the thin metal plate is because the width W of the opening in the portion of the resist film where the microgap is planned to be formed is small. In this case, the amount of etchant supplied to the thin metal sheet through this opening is small, and the etching speed in the thickness direction of the thin metal sheet is low, requiring a long etching time, which is likely to cause lateral etching. Was.
しかるに、上記のように開口部の長さ方向の中
途に、この開口部より幅広の大開口部を形成する
ことにより、開口部の中央へのエツチヤントの供
給量が増大し、かつこの中央部から両側の開口部
に向つてエツチングが進行する結果、従来よりも
短時間で金属薄板のエツチングが可能になり、応
じて開口部における横方向エツチングが抑えられ
て、従来よりも厚さ寸法tに対して小さい幅寸法
wの微小間隙の形成が可能になるのである。 However, by forming a large opening wider than this opening midway along the length of the opening as described above, the amount of etchant supplied to the center of the opening increases, and the amount of etchant supplied from this central portion increases. As the etching progresses toward the openings on both sides, it becomes possible to etch the thin metal plate in a shorter time than before, and the lateral etching at the openings is suppressed, making it easier to etch the thickness t than before. This makes it possible to form a minute gap with a small width w.
実施例
この発明の一実施例を図面を参照して説明す
る。なお、レジスト膜の形成工程を除いては、従
来の第4図ないし第7図と同様なので、この発明
の特徴部分であるレジスト膜の形成工程について
説明する。Embodiment An embodiment of the present invention will be described with reference to the drawings. It should be noted that, except for the process of forming a resist film, the process is the same as the conventional process shown in FIGS. 4 to 7, so the process of forming a resist film, which is a characteristic feature of the present invention, will be described.
第8図はコバール板11に所定パターンのフオ
トレジスト膜12を形成した状態の要部拡大平面
図を示す。このフオトレジスト膜12は、サポー
トリード3,4のサポート部7,8の先端部7
a,8a間の微小間隙に対する幅寸法wのかつ長
さ寸法Lの開口部18を有するとともに、この開
口部18の長さ方向の中央に、前記幅寸法wより
も大きい径Dの円形状の大開口部19を有する。
その他の点は、第5図と同様である。 FIG. 8 shows an enlarged plan view of a main part of a state in which a photoresist film 12 of a predetermined pattern is formed on a Kovar plate 11. This photoresist film 12 covers the tips 7 of the support parts 7 and 8 of the support leads 3 and 4.
It has an opening 18 with a width w and a length L for the minute gap between a and 8a, and a circular hole with a diameter D larger than the width w is provided in the center of the opening 18 in the length direction. It has a large opening 19.
Other points are the same as in FIG. 5.
このようなフオトレジスト膜12を形成したコ
バール板11をエツチング液に浸漬してエツチン
グすると、前記開口部18から露出しているコバ
ール板11がエツチングされるが、開口部18の
長さ方向の中途に、前記開口部18の幅寸法wよ
りも大きい径Dの大開口部19を形成してあるの
で、エツチング液がこの大開口部19を介して、
前記開口部18へ供給されやすくなつて、開口部
18から露出しているコバール板11の厚さ方向
へのエツチング速度が増大する。この結果、エツ
チング所要時間が大幅に短縮され、応じて開口部
18の横方向へのエツチングが抑制されて、結果
として、第9図に示すように、w=1.0〜0.9tの
微小間隙20の形成が可能になつた。のみなら
ず、この発明によると、サポート部7,8の先端
部7a,8aの横方向エツチングが抑えられて両
端が曲面状とならないので、微小間隙20の幅寸
法wが従来よりも正確に設定でき、水晶片10を
従来よりも容易に垂直に保持できる利点がある。
また、大開口部19に対応する箇所に形成された
円弧状の凹部21は、微小間隙20に保持した水
晶片10を接続固着する半田等の接着剤の溜部と
なつて、接着剤の流れ広がりを防止することにも
役立つ。 When the Kovar plate 11 on which such a photoresist film 12 has been formed is immersed in an etching solution and etched, the Kovar plate 11 exposed from the opening 18 is etched, but the part halfway along the length of the opening 18 is etched. Since a large opening 19 having a diameter D larger than the width w of the opening 18 is formed in the opening 18, the etching liquid passes through the large opening 19.
The etching rate in the thickness direction of the Kovar plate 11 exposed from the opening 18 increases as the etching becomes easier to be supplied to the opening 18. As a result, the time required for etching is significantly shortened, and the etching in the lateral direction of the opening 18 is accordingly suppressed.As a result, as shown in FIG. It became possible to form Furthermore, according to the present invention, lateral etching of the tips 7a, 8a of the support parts 7, 8 is suppressed and both ends are not curved, so the width w of the minute gap 20 can be set more accurately than before. This has the advantage that the crystal piece 10 can be held vertically more easily than before.
Further, the arc-shaped recess 21 formed at the location corresponding to the large opening 19 serves as a reservoir for adhesive such as solder that connects and fixes the crystal piece 10 held in the minute gap 20, and the adhesive flows. It also helps prevent the spread.
なお、この発明は上記実施例に示した音叉型水
晶振動子用気密端子のサポートリードの製造に適
用して著効を奏するものではあるが、他に金属薄
板をエツチングして微小間隙を形成する場合には
すべて適用可能である。 Although this invention is highly effective when applied to the manufacture of support leads for airtight terminals for tuning-fork crystal resonators shown in the above embodiments, it is also possible to form minute gaps by etching thin metal plates. Applicable in all cases.
また、大開口部の形状は円形以外の任意の形状
になし得る。 Furthermore, the shape of the large opening can be any shape other than circular.
さらに、エツチヤントとしては液状のもののみ
ならずガス状のものも用い得る。 Furthermore, not only liquid but also gaseous etchants can be used.
さらにまた、レジスト膜のパターニングは、マ
スク露光によることなく、電子ビーム露光等を利
用してもよいし、レジスト膜もフオトレジスト膜
のみならずエツチヤントに対して耐食性を示すも
のであればよい。 Furthermore, the patterning of the resist film may be performed using electron beam exposure or the like instead of using mask exposure, and the resist film may be of any type as long as it exhibits corrosion resistance not only to the photoresist film but also to etchants.
発明の効果
この発明は以上のように、レジスト膜の形成工
程で、微小間隙の形成予定部分の開口部の長さ方
向の中途に、この開口部の幅寸法よりも幅広の大
開口部を有するレジスト膜を形成するものである
から、前記大開口部を通して開口部へのエツチヤ
ントの供給が円滑に行なわれ、横方向エツチング
を抑制して金属薄板のエツチングが行なえるの
で、結局所定の厚さの金属薄板に対して従来より
も小さい幅寸法の微小間隙を形成できるし、換言
すると所定の間隙寸法を形成する場合は、従来よ
りも厚い金属薄板のエツチングが可能になる。Effects of the Invention As described above, the present invention has a large opening wider than the width of the opening in the middle of the opening in the portion where the micro gap is to be formed in the resist film forming process. Since a resist film is formed, the etchant is smoothly supplied to the opening through the large opening, and the thin metal plate can be etched while suppressing lateral etching. It is possible to form a minute gap with a width smaller than that of the conventional method in a thin metal sheet, and in other words, when forming a predetermined gap size, it is possible to etch a thin metal sheet that is thicker than that of the conventional method.
第1図はこの発明の背景となる音叉型水晶振動
子用気密端子の断面図を示す。第2図は第1図の
気密端子の要部拡大正面図である。第3図は第2
図の―線に沿う側面図である。第4図ないし
第7図はサポートリードの製造方法について説明
するための各段階を示し、第4図は金属薄板の平
面図、第5図はレジスト膜現像後の金属薄板の平
面図、第6図はリードフレームの平面図、第7図
は連結型封着体の断面図である。第8図はこの発
明によるレジスト膜現像後の金属薄板の要部拡大
平面図である。第9図は金属薄板のエツチング後
のリードフレームの要部拡大平面図である。
1……金属外環、2……ガラス、3,4……サ
ポートリード、5,6……リード部、7,8……
サポート部、7a,8a……先端部、11……金
属薄板(コバール板)、12……レジスト膜(フ
オトレジスト膜)、14……リードフレーム、1
5……連結型封着体、18……開口部、19……
大開口部、20……微小間隙、21……凹部。
FIG. 1 shows a sectional view of an airtight terminal for a tuning fork type crystal resonator, which is the background of the present invention. FIG. 2 is an enlarged front view of essential parts of the airtight terminal shown in FIG. 1. Figure 3 is the second
FIG. 3 is a side view taken along line - in the figure. 4 to 7 show each step to explain the method for manufacturing the support lead, FIG. 4 is a plan view of the thin metal plate, FIG. 5 is a plan view of the thin metal plate after developing the resist film, and FIG. 6 is a plan view of the thin metal plate. The figure is a plan view of the lead frame, and FIG. 7 is a sectional view of the connected sealing body. FIG. 8 is an enlarged plan view of a main part of a thin metal plate after developing a resist film according to the present invention. FIG. 9 is an enlarged plan view of the main part of the lead frame after etching the thin metal plate. 1... Metal outer ring, 2... Glass, 3, 4... Support lead, 5, 6... Lead part, 7, 8...
Support part, 7a, 8a...Tip part, 11...Metal thin plate (Kovar plate), 12...Resist film (photoresist film), 14...Lead frame, 1
5... Connected sealed body, 18... Opening, 19...
Large opening, 20... minute gap, 21... recess.
Claims (1)
た所定パターンのレジスト膜を形成する工程と、 前記微小間隙の形成予定部分から露出する金属
薄板をエツチング除去する工程と、 前記レジスト膜を除去する工程とを含む金属薄
板のエツチング方法において、 前記レジスト膜の形成工程で、微小間隙の形成
予定部分の開口部の長さ方向の中途に、この開口
部の幅寸法より幅広の大開口部を有するレジスト
膜を形成することを特徴とする金属薄板のエツチ
ング方法。[Scope of Claims] 1. A step of forming a resist film with a predetermined pattern in which a portion where a minute gap is to be formed is opened on a thin metal plate, and a step of etching away the thin metal plate exposed from the portion where a minute gap is to be formed; In the method for etching a thin metal plate, which includes a step of removing a resist film, in the step of forming the resist film, a hole having a width wider than the width of the opening is formed midway along the length of the opening in the portion where the microgap is to be formed. A method for etching a thin metal plate, the method comprising forming a resist film having large openings.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22271583A JPS60114578A (en) | 1983-11-25 | 1983-11-25 | Method for etching thin metallic plate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP22271583A JPS60114578A (en) | 1983-11-25 | 1983-11-25 | Method for etching thin metallic plate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60114578A JPS60114578A (en) | 1985-06-21 |
| JPS6219506B2 true JPS6219506B2 (en) | 1987-04-28 |
Family
ID=16786766
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP22271583A Granted JPS60114578A (en) | 1983-11-25 | 1983-11-25 | Method for etching thin metallic plate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60114578A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10596086B2 (en) | 2012-06-21 | 2020-03-24 | The Procter & Gamble Company | Reduction of tooth staining derived from cationic antibacterials |
-
1983
- 1983-11-25 JP JP22271583A patent/JPS60114578A/en active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10596086B2 (en) | 2012-06-21 | 2020-03-24 | The Procter & Gamble Company | Reduction of tooth staining derived from cationic antibacterials |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60114578A (en) | 1985-06-21 |
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