JPS6222541B2 - - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an improvement in a semiconductor pressure detection device that detects fluid pressure using a silicon diaphragm.

A conventional semiconductor pressure detection device of this type is shown in a front sectional view in FIG. 1 is a silicon diaphragm, and a gauge resistance layer (not shown) is formed on the surface layer of the thin portion. 2 is a silicone backing plate to which this silicone diaphragm 1 is airtightly fixed, and a sealed chamber 3 is formed in the recess of the diaphragm 1.
The inside is filled with a vacuum or standard pressure gas and sealed. Reference numeral 4 denotes a pedestal made of silicon or glass material, on which the silicone backing plate 2 is adhesively fixed so as not to cause mechanical strain as much as possible, and is adhesively fixed to the circuit board 5. 6 is the circuit board 5
Terminal electrode part of the wiring conductor applied on the top, 7 is an extraction electrode part on the silicon diaphragm 1 (not shown)
This is a thin metal wire in which the terminal electrode portion 6 and the corresponding terminal electrode portion 6 are wire-bonded.

In the above conventional device, the silicon diaphragm 1
The pedestal 4 is made of silicon or glass in order to minimize mechanical strain on the pedestal 4, but this requires troublesome assembly work such as attaching the pedestal 4 and wire bonding. Furthermore, depending on the type of gas whose pressure is to be detected, the thin metal wire 7 may corrode and break, posing a problem in terms of reliability.

In this invention, beam leads are formed on both extraction electrode parts from a gauge resistance layer formed on the surface layer of a silicon diaphragm, and the beam leads are drawn out in both directions, and the silicon diaphragm part is placed on a circuit board with the surface side facing downward. Adhesively connect the beam leads on both sides to the corresponding terminal electrodes on both sides, and
The object of the present invention is to provide a highly reliable and inexpensive semiconductor pressure detection device that supports a silicon diaphragm portion, eliminates the need for a conventional pedestal and thin metal wire wire bond, and facilitates assembly work.

FIG. 2 is a front sectional view of a semiconductor pressure detection device according to an embodiment of the present invention, and numerals 1 to 3, 5, and 6 are the same as those of the conventional device. Reference numeral 10 denotes beam leads for a plurality of beams on both sides, which are formed on lead electrode portions (not shown) on both sides from a gauge resistance layer (not shown) formed on the surface layer of the silicon diaphragm 1 and drawn out laterally. be.

In the device of the above-mentioned embodiment, a silicon diaphragm 1 part with a silicon backing plate 2 bonded to the back side is placed on a circuit board 5 with the beam leads 10 facing downward, and the beam leads 10 on both sides are connected to the corresponding wirings on both sides. The silicon diaphragm 1 is connected to the terminal electrode part 6 of the silicon diaphragm 1 by thermocompression bonding or brazing, etc., and is connected to the silicon diaphragm 1 by a plurality of beam leads 10 on both sides.
supports the department.

As described above, according to the present invention, beam leads for a plurality of beams are formed on the extraction electrode portions on both sides of the surface of the silicon diaphragm and are drawn out to both sides, and the surface of the silicon diaphragm portion is turned downward, and the beam leads on both sides are The leads were adhesively connected to the corresponding terminal electrodes on both sides of the circuit board, and the silicon diaphragm was supported by the multiple beam leads on both sides, eliminating the need for conventional pedestals and wire bonds using thin metal wires. Therefore, reliability can be increased and costs can be reduced.

[Brief explanation of the drawing]

FIG. 1 is a front sectional view of a main part of a conventional semiconductor pressure detection device, and FIG. 2 is a front sectional view of a main part of a semiconductor pressure detection device according to an embodiment of the present invention. DESCRIPTION OF SYMBOLS 1... Silicon diaphragm, 2... Silicon backing plate, 3... Sealed chamber, 5... Circuit board, 6... Wiring terminal electrode part, 10... Beam lead. Note that the same reference numerals in the figures indicate the same or equivalent parts.

Claims (1)

[Claims] 1 A silicone patch plate is airtightly adhered to the back side to form a sealed chamber with a vacuum or standard pressure inside.
A silicon diaphragm with a gauge resistance layer on its surface layer and lead-out electrodes on both sides, and a beam lead for multiple beams on both sides formed on the lead-out electrodes on both sides, with tips drawn out in both directions. and a circuit board having terminal electrode portions of wiring conductors on both sides at intervals on the upper surface, and with the silicon diaphragm portion facing downward, the tips of the beam leads on both sides are connected to the ends of the beam leads on the corresponding both sides. A semiconductor pressure detection device characterized in that the silicon diaphragm portion is adhesively connected to the terminal electrode portions and supported by the plurality of beam leads on both sides.