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JPS622258B2 - - Google Patents
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JPS622258B2 - - Google Patents

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Publication number
JPS622258B2
JPS622258B2 JP13578679A JP13578679A JPS622258B2 JP S622258 B2 JPS622258 B2 JP S622258B2 JP 13578679 A JP13578679 A JP 13578679A JP 13578679 A JP13578679 A JP 13578679A JP S622258 B2 JPS622258 B2 JP S622258B2
Authority
JP
Japan
Prior art keywords
plasma
flow rate
spectrometer
sample
carrier gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP13578679A
Other languages
Japanese (ja)
Other versions
JPS5660334A (en
Inventor
Satoru Imai
Shotaro Asada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shimadzu Corp
Original Assignee
Shimadzu Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shimadzu Corp filed Critical Shimadzu Corp
Priority to JP13578679A priority Critical patent/JPS5660334A/en
Publication of JPS5660334A publication Critical patent/JPS5660334A/en
Publication of JPS622258B2 publication Critical patent/JPS622258B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01NINVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/62Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light
    • G01N21/71Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light thermally excited
    • G01N21/73Systems in which the material investigated is excited whereby it emits light or causes a change in wavelength of the incident light thermally excited using plasma burners or torches

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  • Health & Medical Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Investigating, Analyzing Materials By Fluorescence Or Luminescence (AREA)

Description

【発明の詳細な説明】 本発明はプラズマ炎を光源とする発光分光分析
装置に関する。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an optical emission spectrometer using a plasma flame as a light source.

高周波誘導結合プラズマを光源とする発光分光
分析では検出感度、精度、干渉、安定性等の分析
結果が種々な要因によつて変化し、検出しようと
する個々の元素について最適分析条件を見出すこ
とは容易でない。
In emission spectroscopy using high-frequency inductively coupled plasma as a light source, analysis results such as detection sensitivity, accuracy, interference, and stability vary depending on various factors, making it difficult to find the optimal analysis conditions for each element to be detected. It's not easy.

本発明は上記した高周波誘導結合プラズマを光
源とする発光分析において感度、精度等の分析装
置の評価基準を変動させる要因を明らかにするこ
とによつて分析条件設定方法を安式化し、分析装
置の使用者が分析目的に応じて容易に分析条件を
設定し良好な分析結果が得られるようにしようと
するものである。
The present invention simplifies the method for setting analysis conditions by clarifying the factors that change the evaluation criteria of the analyzer, such as sensitivity and accuracy, in emission analysis using the above-mentioned high-frequency inductively coupled plasma as a light source. The purpose is to enable the user to easily set analysis conditions according to the purpose of analysis and obtain good analysis results.

プラズマ炎を光源とする発光分光分析は、プラ
ズマトーチによつてアルゴンガス等のプラズマ炎
を形成し、霧状にした試料をキヤリヤガスに混ぜ
てこのプラズマ炎内に導入してプラズマにより加
熱及びプラズマ内の電子による衝撃によつて試料
成分の原子を励起し各元素個有のスペクトル線を
放射させ、これを分光器を通して検出測光するも
のである。
In optical emission spectrometry analysis using a plasma flame as a light source, a plasma flame of argon gas or other gas is formed using a plasma torch, a sample is mixed with carrier gas and introduced into the plasma flame, and the sample is heated by the plasma and removed inside the plasma. The atoms of the sample components are excited by the bombardment of electrons, causing them to emit spectral lines unique to each element, which are detected and photometered through a spectrometer.

まず分析結果の良否に影響する因子について説
明する。第1図は横軸にプラズマ炎内に試料を送
り込むキヤリヤガスの流量をとり縦軸にスペクト
ル線強度をとつてスペクトル線強度がキヤリヤ流
量によつてどのように変るかを3種の試料につい
て示したものである。一般的にキヤリヤ流量が少
ない間は強度はキヤリヤ流量と共に直線的に増加
するがやがて極大に達しその後はキヤリヤ流量を
増すと却つて強度が低下してくる。これはキヤリ
ヤ流量が少ない間はスペクトル強度は導入される
試料の量に比例するとして説明できる。しかしキ
ヤリヤ流量が増すとその冷却効果が無視できなく
なりスペクトル線強度は飽和に達し更にキヤリヤ
を増すことによつて強度は却つて減少する。3本
のカーブのうち最も左にピークのあるものは試料
が難解離性元素の場合であつて、この場合試料元
素の原子の励起にはより高温が必要であるから他
種の試料の場合よりもキヤリヤによるプラズマ冷
却の効果が早く現われる。この場合他種の試料よ
りもキヤリヤ中の試料濃度を高くしておかないと
同程度のスペクトル線強度が得られない。第1図
は以下のことを示している。
First, factors that influence the quality of the analysis results will be explained. Figure 1 shows how the spectral line intensity changes depending on the carrier flow rate for three types of samples, with the horizontal axis representing the flow rate of the carrier gas feeding the sample into the plasma flame and the vertical axis representing the spectral line intensity. It is something. Generally, while the carrier flow rate is low, the strength increases linearly with the carrier flow rate, but it eventually reaches a maximum and after that, as the carrier flow rate increases, the strength actually decreases. This can be explained by saying that while the carrier flow rate is low, the spectral intensity is proportional to the amount of sample introduced. However, as the carrier flow rate increases, the cooling effect cannot be ignored, and the spectral line intensity reaches saturation, and as the carrier is further increased, the intensity decreases. Of the three curves, the one with the peak on the far left is when the sample is a difficult-to-dissociate element, and in this case, a higher temperature is required to excite the atoms of the sample element than in the case of other types of samples. However, the effect of plasma cooling by the carrier appears quickly. In this case, the same level of spectral line intensity cannot be obtained unless the sample concentration in the carrier is higher than that of other types of samples. Figure 1 shows the following:

(1) キヤリヤガス流量の或る値の所でスペクトル
線強度が最大になる。それよりキヤリヤ流量が
少ない所、多い所ではキヤリヤ流量の変動によ
つてスペクトル線強度が変動する。即ち安定性
が低い。スペクトル線強度最大となるキヤリヤ
流量の付近では安定性が良くなると共に検出感
度も向上することになる。
(1) The spectral line intensity reaches its maximum at a certain value of the carrier gas flow rate. In areas where the carrier flow rate is lower or higher than that, the spectral line intensity fluctuates due to fluctuations in the carrier flow rate. That is, stability is low. In the vicinity of the carrier flow rate where the spectral line intensity is maximum, stability is improved and detection sensitivity is also improved.

(2) 試料成分原子の解離難易度により難解離の元
素程最大スペクトル強度を得るキヤリヤ流量を
少なく設定しなければならず、逆にキヤリヤ中
における試料濃度は難解離の元素程高く設定す
る必要がある。
(2) Depending on the dissociation difficulty of sample component atoms, the more difficult the element is to dissociate, the lower the carrier flow rate to obtain the maximum spectral intensity must be set, and conversely, the sample concentration in the carrier must be set higher as the element is more difficult to dissociate. be.

第2図は分光器に対する光源位置が目的元素の
検出限界にどのように影響するかを示すものであ
る。こゝで光源の分光器に対する位置と云うのは
光源のプラズマ炎は上方に向つて延びているの
で、その炎のどの高さの所から出ている光を光分
器に導入するを表わすもので、同図左上に画いた
図で1はプラズマトーチ、2は高周波コイル、3
がプラズマ炎で高周波コイル2の上縁を高さ0と
して高さを測り、第2図のグラフの横軸はその高
さを表わし、その高さの所を分光器の光軸に一致
させると云うことである。試料の霧を含んだキヤ
リヤガスは下方からプラズマ中心に送り込まれ、
プラズマ中を上方に昇る。試料はこのキヤリヤの
流れに乗つてプラズマ中を上昇しプラズマによつ
て励起され発光する。この発光強度は温度によつ
て変り、プラズマ炎中の温度は高さ方向に変つて
いるから、試料原子の発光強度はプラズマ内の高
さによつて異なつている。他方プラズマを形成す
るガス(例えばアルゴン)自身もプラズマ内で発
光しておりこの光は検出しようとする元素のスペ
クトル線に対し雑音となり、この雑音強度もプラ
ズマの高さ方向の位置で異なる。目的のスペクト
ル線はこの雑音と混在しているので目的のスペク
トル線が雑音に埋れて検出できなくなる限界の試
料濃度があり、第2図の縦軸はこの限界を示して
いる。第2図は別の表現をすれば光源の高さ方向
の位置によつてS/N比がどのように変るかを示
し、第2図はこのS/N比が最大値を有すること
を示している。目的元素に応じて分光器に対する
光源の高さ方向の位置を適当に選ぶと感度の極大
と結果の安定性の両方の効果が得られる。イオン
スペクトル線を検出しようとするときは、中性ス
ペクトル線を検出する場合よりプラズマ炎の高い
位置から採光する方が良い。一般にS/N比がプ
ラズマ炎の基底部に近い所で悪くなるのはプラズ
マ炎は下部の方が高温でプラズマ自身の発光によ
る雑音が大きいためと考えられる。またプラズマ
炎の上部でもS/N比が低下するのはプラズマ温
度が低いため試料成分の原子の発光量が減少する
と共に試料が炎中を上昇中に拡散して試料の発光
領域が拡がり分光器への入射効率が低下するため
と考えられる。
FIG. 2 shows how the position of the light source relative to the spectrometer affects the detection limit of the target element. The position of the light source relative to the spectrometer here refers to the height of the flame from which the light is introduced into the spectrometer, since the plasma flame of the light source extends upward. In the diagram drawn in the upper left of the same figure, 1 is the plasma torch, 2 is the high frequency coil, and 3 is the plasma torch.
is a plasma flame, and the height is measured with the upper edge of the high-frequency coil 2 as height 0, and the horizontal axis of the graph in Figure 2 represents the height, and when the height is aligned with the optical axis of the spectrometer, That's what I'm saying. A carrier gas containing sample mist is sent from below to the plasma center.
It rises upward in the plasma. The sample rises in the plasma along with the flow of this carrier, and is excited by the plasma to emit light. This emission intensity varies depending on the temperature, and since the temperature in the plasma flame changes in the height direction, the emission intensity of the sample atoms varies depending on the height within the plasma. On the other hand, the gas that forms the plasma (for example, argon) itself emits light within the plasma, and this light becomes noise in the spectral line of the element to be detected, and the intensity of this noise also differs depending on the position in the height direction of the plasma. Since the target spectral line is mixed with this noise, there is a limit sample concentration at which the target spectral line is buried in the noise and cannot be detected, and the vertical axis in FIG. 2 shows this limit. In other words, Figure 2 shows how the S/N ratio changes depending on the position of the light source in the height direction, and Figure 2 shows that this S/N ratio has the maximum value. ing. By appropriately selecting the position of the light source relative to the spectrometer in the height direction depending on the target element, it is possible to obtain both the maximum sensitivity and the stability of the results. When trying to detect ion spectral lines, it is better to collect light from a higher position above the plasma flame than when detecting neutral spectral lines. Generally, the reason why the S/N ratio deteriorates near the base of a plasma flame is thought to be because the lower part of the plasma flame is at a higher temperature and the noise caused by the plasma's own light emission is greater. Furthermore, the S/N ratio decreases even in the upper part of the plasma flame because the plasma temperature is low, so the amount of light emitted by the atoms of the sample components decreases, and the sample diffuses as it ascends through the flame, expanding the light emitting region of the sample, which can be detected by the spectrometer. This is thought to be due to a decrease in the incidence efficiency.

第3図は分光器の測定バンド幅と第2図の縦軸
と同じ検出限界との関係を示している。測定バン
ド幅は分光器の射出スリツトの幅を射出スリツト
面上のスペクトル像の波長範囲(Å)で表わした
ものである。試料成分の原子はプラズマ炎中でそ
の加熱温度における気体分子としての速度を以て
運動しており、その原子から出るスペクトル線は
ドツプラー効果によつて波長がずれるので、スペ
クトル線は或る波長範囲に拡がつている。目的と
するスペクトル線だけが存在するのであれば分光
器の射出スリツトは上記したスペクトル線の拡が
りの範囲と同じ幅に開いておくのが受光素子への
光の導入効率の点からみて最も良いが、他に妨害
雑音光があるときはスリツト幅を広くすることは
それだけ雑音光を多く取り込むことになるので
S/N比の低下を来す。従つて第3図に示すよう
に射出スリツト幅はS/N比最高を与える幅があ
つて、それより広くても狭くても検出限界は高く
なる。第3図で左側のカーブはドツプラー効果の
少ない元素、右側のカーブはドツプラー効果の大
なる元素の場合を示す。
FIG. 3 shows the relationship between the measurement bandwidth of the spectrometer and the detection limit, which is the same as the vertical axis in FIG. The measurement bandwidth is the width of the exit slit of the spectrometer expressed in terms of the wavelength range (Å) of the spectral image on the exit slit surface. The atoms of the sample components move in the plasma flame at the speed of gas molecules at the heating temperature, and the wavelengths of the spectral lines emitted by the atoms shift due to the Doppler effect, so the spectral lines spread over a certain wavelength range. It's stiff. If only the desired spectral line exists, it is best to leave the spectrometer's exit slit open to the same width as the spread range of the spectral line mentioned above, from the point of view of the efficiency of introducing light into the photodetector. If there is other interference noise light, widening the slit width means that more noise light will be taken in, resulting in a decrease in the S/N ratio. Therefore, as shown in FIG. 3, the injection slit width has a width that provides the highest S/N ratio, and the detection limit increases even if it is wider or narrower than that. In FIG. 3, the curve on the left side shows an element with a small Doppler effect, and the curve on the right side shows an element with a large Doppler effect.

以上によつてキヤリヤガス流量、光源位置、分
光器の射出スリツト幅の3因子が分析結果にどの
ように影響するかが明らかになつた。これらの因
子は或る設定値の所で検出感度極大或はS/N比
極小を与えるので、これらの因子を感度最大の所
に設定すると感度の最大と同時に測定結果の安定
性が得られ、その結果分析精度の向上が得られる
ことになる。
From the above, it has become clear how the three factors of carrier gas flow rate, light source position, and spectrometer exit slit width affect the analytical results. These factors give the maximum detection sensitivity or the minimum S/N ratio at a certain set value, so setting these factors to the maximum sensitivity will provide the maximum sensitivity and stability of the measurement results at the same time. As a result, analysis accuracy can be improved.

本発明はキヤリヤガス流量調節手段、プラズマ
トーチ上下位置調節手段及び分光器射出スリツト
幅調節手段を設け、予め各元素について上記各調
節手段の設定位置を求めておき、検出定量しよう
とする元素に対し、各調節手段を上記予め求めら
れている設定位置に調整するようにしたプラズマ
光源発光分光分析装置を提供するものである。
In the present invention, a carrier gas flow rate adjustment means, a plasma torch vertical position adjustment means, and a spectrometer injection slit width adjustment means are provided, and the setting positions of each of the adjustment means are determined for each element in advance, and for the element to be detected and quantified, The present invention provides a plasma light source emission spectrometer in which each adjusting means is adjusted to the predetermined set positions.

第4図は本発明の一実施例装置を示す。1はプ
ラズマトーチで下部からプラズマ形成ガスである
アルゴンガスとグランドガスが夫々一定流量で供
給されている。2はプラズマトーチ1に巻装した
高周波コイル、3はプラズマトーチ上に形成され
たプラズマ炎である。4はキヤリヤガス溜めでキ
ヤリヤガスは流量計5を通り、流量調節絞り6を
経て噴霧室7内に噴出せしめられる。噴霧室7内
でキヤリヤガスノズル内に試料吸引管8が挿入し
てあつて、試料容器9から試料溶液が吸い上げら
れ噴霧室7内に噴霧される。噴霧された試料溶液
の一部は乾燥してエアゾルとなつてキヤリヤガス
と共にプラズマトーチ内に挿入された管を通して
プラズマ炎の中心部に流出する。噴霧室内に噴霧
された試料液のうち余分なものはドレン排出管1
9を通して排出される。プラズマトーチ1は上下
方向のガイド10に沿つて可動な保持体11に保
持されており、保持体11はねじ12で上下され
る。13はねじ12の駆動機構である。Lは集光
レンズでプラズマ炎3の中心線部の像を分光器1
4の入射スリツトS1上に形成する。M1はコリ
メータ凹面鏡、Gは反射回折格子、M2はテレメ
ータ凹面鏡で格子Gで回折された光を射出スリツ
トS2上に集光させる。15は射出スリツトS2
のスリツト幅調節機構である。CPUはマイクロ
コンピユータで各元素に対するキヤリヤガス流
量、プラズマトーチの高さ位置及びスリツト幅の
適値が記憶させてあり、検出しようとする元素を
指定するとその元素に対する上記各パラメータを
読出し、絞り6の調節機構16及びねじ12の駆
動機構13及び射出スリツトS2の幅調節機構1
5を駆動し、キヤリヤガス流量、プラズマトーチ
高さ位置及び分光器の射出スリツト幅の3者を上
記読出したパラメータと比較し、両者が一致した
所で各調節手段の駆動を停止させる。このように
して検出しようとする元素に対して一動作の操作
で自動的に最適調整ができることになる。
FIG. 4 shows an embodiment of the present invention. Reference numeral 1 denotes a plasma torch, to which argon gas and ground gas, which are plasma forming gases, are supplied from the bottom at constant flow rates. 2 is a high frequency coil wound around the plasma torch 1, and 3 is a plasma flame formed on the plasma torch. Reference numeral 4 denotes a carrier gas reservoir, and the carrier gas passes through a flow meter 5, passes through a flow rate regulating throttle 6, and is ejected into a spray chamber 7. A sample suction tube 8 is inserted into a carrier gas nozzle in the spray chamber 7, and a sample solution is sucked up from the sample container 9 and sprayed into the spray chamber 7. A portion of the atomized sample solution dries into an aerosol and flows out into the center of the plasma flame through a tube inserted into the plasma torch together with the carrier gas. Excess sample liquid sprayed into the spray chamber is drained from the drain discharge pipe 1.
It is discharged through 9. The plasma torch 1 is held by a holder 11 that is movable along a vertical guide 10, and the holder 11 is moved up and down by a screw 12. 13 is a drive mechanism for the screw 12. L is a condensing lens that captures the image of the center line of plasma flame 3 using spectroscope 1.
It is formed on the entrance slit S1 of No. 4. M1 is a collimator concave mirror, G is a reflection diffraction grating, and M2 is a telemeter concave mirror, which converges the light diffracted by the grating G onto the exit slit S2. 15 is injection slit S2
This is a slit width adjustment mechanism. The CPU is a microcomputer that stores appropriate values for the carrier gas flow rate, plasma torch height position, and slit width for each element, and when the element to be detected is specified, the above parameters for that element are read out and the aperture 6 is adjusted. Mechanism 16, drive mechanism 13 for screw 12, and width adjustment mechanism 1 for injection slit S2
5, the carrier gas flow rate, plasma torch height position, and spectrometer exit slit width are compared with the parameters read above, and when the parameters match, the driving of each adjusting means is stopped. In this way, optimum adjustment can be automatically made for the element to be detected with a single operation.

本発明分光分析装置は上述したような構成で分
析感度、安定性に影響する因子とその影響の仕方
とを明らかにし、感度最良に調整することによつ
て測定結果の安定性を得、それに伴つて測定精度
の向上も得るものであつて、しかも調整操作が簡
単と云う効果が得られる。
The spectroscopic analyzer of the present invention has the above-described configuration to clarify the factors that affect analytical sensitivity and stability, and how they affect them, and to obtain stability in measurement results by adjusting the sensitivity to the best possible value. As a result, measurement accuracy can be improved, and the adjustment operation can be simplified.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図はキヤリヤガス流量とスペクトル線検出
強度との関係グラフ、第2図は光源位置と検出限
界との関係グラフ、第3図は測定バンド幅(分光
器の射出スリツト幅)と検出限界との関係グラ
フ。第4図は本発明の一実施例装置のブロツク
図。 1…プラズマトーチ、4…キヤリヤガス溜め、
6…流量調節絞り、7…噴霧室、9…試料容器、
13…プラズマトーチ上下駆動機構、15…射出
スリツト幅調節機構、16…絞り調節機構。
Figure 1 is a graph of the relationship between carrier gas flow rate and spectral line detection intensity, Figure 2 is a graph of the relationship between light source position and detection limit, and Figure 3 is a graph of measurement bandwidth (exit slit width of spectrometer) and detection limit. relationship graph. FIG. 4 is a block diagram of an apparatus according to an embodiment of the present invention. 1... Plasma torch, 4... Carrier gas reservoir,
6...Flow rate adjustment aperture, 7...Spray chamber, 9...Sample container,
13... Plasma torch vertical drive mechanism, 15... Injection slit width adjustment mechanism, 16... Aperture adjustment mechanism.

Claims (1)

【特許請求の範囲】[Claims] 1 プラズマトーチ上下位置調節手段とキヤリヤ
ガス流量調節手段と、分光器出口スリツト幅調節
手段と、測定対象の種類別に最適のプラズマトー
チ高さ、キヤリヤガス流量及び分光器出口スリツ
ト幅を記憶させた上記各調節手段制御装置とより
なるプラズマ光源発光分光分析装置。
1 Plasma torch vertical position adjustment means, carrier gas flow rate adjustment means, spectrometer exit slit width adjustment means, and each of the above adjustments in which the optimal plasma torch height, carrier gas flow rate, and spectrometer exit slit width are stored for each type of measurement object. A plasma light source emission spectrometer comprising a means control device.
JP13578679A 1979-10-20 1979-10-20 Spectral analyzer for plasma light source light emission Granted JPS5660334A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13578679A JPS5660334A (en) 1979-10-20 1979-10-20 Spectral analyzer for plasma light source light emission

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13578679A JPS5660334A (en) 1979-10-20 1979-10-20 Spectral analyzer for plasma light source light emission

Publications (2)

Publication Number Publication Date
JPS5660334A JPS5660334A (en) 1981-05-25
JPS622258B2 true JPS622258B2 (en) 1987-01-19

Family

ID=15159803

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13578679A Granted JPS5660334A (en) 1979-10-20 1979-10-20 Spectral analyzer for plasma light source light emission

Country Status (1)

Country Link
JP (1) JPS5660334A (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59186279A (en) * 1983-04-06 1984-10-23 Meidensha Electric Mfg Co Ltd Control of inhibitor of inorganic system dendrite in electrolyte of zinc-bromine battery
JPH0629854B2 (en) * 1983-11-30 1994-04-20 株式会社島津製作所 Cathodoluminescence detector
JPH0718798B2 (en) * 1984-02-27 1995-03-06 株式会社島津製作所 High frequency inductively coupled plasma optical emission spectrometer
JPH052846Y2 (en) * 1985-02-22 1993-01-25
JPS6275334A (en) * 1985-09-30 1987-04-07 Yokogawa Electric Corp High frecquency induction bond plasma emission spectrosope
JPH08261938A (en) * 1996-04-17 1996-10-11 Shimadzu Corp High frequency inductively coupled plasma optical emission spectrometer
JP5187259B2 (en) * 2009-04-07 2013-04-24 株式会社島津製作所 ICP emission analysis apparatus and ICP emission analysis method

Also Published As

Publication number Publication date
JPS5660334A (en) 1981-05-25

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