JPS6226171B2 - - Google Patents
Info
- Publication number
- JPS6226171B2 JPS6226171B2 JP56047072A JP4707281A JPS6226171B2 JP S6226171 B2 JPS6226171 B2 JP S6226171B2 JP 56047072 A JP56047072 A JP 56047072A JP 4707281 A JP4707281 A JP 4707281A JP S6226171 B2 JPS6226171 B2 JP S6226171B2
- Authority
- JP
- Japan
- Prior art keywords
- reaction tube
- growth
- vapor phase
- phase growth
- tube
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/34—Deposited materials, e.g. layers
- H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
- H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
- H10P14/3421—Arsenides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
- H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Description
【発明の詳細な説明】
本発明は、気相成長用反応管に関するものであ
り、更に詳しくは成長領域への汚染源の混入を防
止するための方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a reaction tube for vapor phase growth, and more particularly to a method for preventing contamination sources from entering a growth region.
気相成長法は単結晶基板上に単結晶薄膜層を成
長させる方法で、半導体プロセスに広く用いられ
ており、更に単結晶薄膜層を多重に成長する多層
成長法という形でも用いられている。たとえば、
化合物半導体の気相成長法は、マイクロ波素子、
光電素子等の多くの半導体素子を製造する上で非
常に重要な技術である。以下、化合物半導体
GaAsの気相成長を例にとり本発明を詳細に説明
する。 The vapor phase growth method is a method of growing a single crystal thin film layer on a single crystal substrate, and is widely used in semiconductor processes, and is also used in the form of a multilayer growth method that grows multiple single crystal thin film layers. for example,
The vapor phase growth method of compound semiconductors is used for microwave devices,
This is a very important technology in manufacturing many semiconductor devices such as photoelectric devices. Below, compound semiconductor
The present invention will be explained in detail by taking GaAs vapor phase growth as an example.
従来の横型反応管を用いたGaAsの気相成長装
置を第１図に示す。反応管内の成長に使用される
治具はすべて高純度石英製であり、反応管周辺に
備え付けられた加熱炉（図示せず）により反応管
内に所望の温度プロフアイルを与え、成長までの
前準備のための各工程を経た後、結晶基板に
GaAsの成長が行なわれる。このような一般的な
気相成長装置におけるGaAs気相成長の工程は、
次の３つに大きく分けられる。(1)反応管の気相エ
ツチング、(2)Ga源への砒素の飽和、(3)結晶基板
上へのGaAsの成長。上記各工程では成長領域の
ガス流下流側の低温部にGaAs、GaCl3、Asなど
よりなる混合物が反応管内壁に析出し付着するた
め、その部分に石英管（以下ライナー管と呼ぶ）
を反応管に内接するように接置することが行なわ
れている。そして各工程ごとに反応管内を清浄に
保つため、上記混合物が付着したライナー管を交
換する必要がある。しかし、成長を繰り返し行つ
ていくと、ライナー管と反応管とのすき間にも混
合物がたまり汚れてくる。特に、反応管ガス排出
口近辺が著しく汚れてしまう。これは、上記混合
物が潮解性をもつているからであり、この状態で
成長用ライナー管を反応管に挿入する時、混合物
を反応管内に持ち込んでしまう。その結果、成長
系のバツグランド不純物レベルが上がるため、高
純度GaAs成長層が再現性よく得られないという
問題が生じてくる。一方、混合物が潮解性を持つ
ていることにより、成長領域へ水分が持ち込まれ
るため、成長層の表面モフオロジイーが悪化する
という問題も生じてくる。 Figure 1 shows a GaAs vapor phase growth apparatus using a conventional horizontal reaction tube. All of the jigs used for growth inside the reaction tube are made of high-purity quartz, and a heating furnace (not shown) installed around the reaction tube provides the desired temperature profile inside the reaction tube and prepares it for growth. After passing through each process, the crystal substrate is
GaAs growth takes place. The process of GaAs vapor phase growth in such a general vapor phase growth apparatus is as follows:
It can be broadly divided into three categories: (1) Vapor-phase etching of the reaction tube, (2) saturation of the Ga source with arsenic, and (3) growth of GaAs on the crystal substrate. In each of the above steps, a mixture of GaAs, GaCl 3 , As, etc. is precipitated and adhered to the inner wall of the reaction tube in the low-temperature part on the downstream side of the gas flow in the growth region, so a quartz tube (hereinafter referred to as a liner tube) is placed in that area.
It is common practice to place the reactor so that it is inscribed in the reaction tube. In order to keep the inside of the reaction tube clean after each step, it is necessary to replace the liner tube to which the above mixture has adhered. However, as growth is repeated, the mixture also accumulates in the gap between the liner tube and the reaction tube and becomes dirty. In particular, the vicinity of the reaction tube gas outlet becomes extremely dirty. This is because the above mixture has deliquescent properties, and when the growth liner tube is inserted into the reaction tube in this state, the mixture is brought into the reaction tube. As a result, the background impurity level in the growth system increases, resulting in the problem that high purity GaAs growth layers cannot be obtained with good reproducibility. On the other hand, since the mixture has deliquescent properties, moisture is brought into the growth region, resulting in a problem of deterioration of the surface morphology of the growth layer.
本発明の目的は上記問題点を排除し、成長領域
への汚染源の混入を防止するための気相成長装置
を提供することにある。 SUMMARY OF THE INVENTION An object of the present invention is to provide a vapor phase growth apparatus that eliminates the above-mentioned problems and prevents contamination sources from entering the growth region.
本発明は、気相成長用反応管において、ガス流
方向に対して基板結晶位置より下流側の反応管全
周における直径を基板結晶が置かれている領域を
含めた上流側の反応管直径より大きくしてなる気
相成長用反応管と、該気相成長用反応管内に挿入
されたライナー管と、該ライナー管と前記気相成
長用反応管との間の前記反応管直径が大なる部分
に前記反応管に内装して位置する補助管とを設け
たことにより、成長領域への汚染源の混入を防止
するようにしたものである。 In a reaction tube for vapor phase growth, the diameter of the entire circumference of the reaction tube on the downstream side of the substrate crystal position with respect to the gas flow direction is smaller than the diameter of the reaction tube on the upstream side including the area where the substrate crystal is placed. An enlarged reaction tube for vapor phase growth, a liner tube inserted into the reaction tube for vapor phase growth, and a portion where the diameter of the reaction tube is large between the liner tube and the reaction tube for vapor phase growth. By providing an auxiliary tube located inside the reaction tube, contamination sources are prevented from entering the growth region.
本発明に係る実施例を以下横型反応管を用いた
GaAs気相成長装置について説明する。第２図は
本発明による一実施例を示すものであり、内径40
φの気相成長用反応管においてガス流方向に対し
基板結晶位置から下流側10cmより反応管内径45φ
にしてある。そして反応管径が大きくなつた部分
に内径40φ肉厚２mmのライナー管を挿入してあ
る。成長開始前に成長用ライナー管を反応管に挿
入する時、反応管内径が大きくなつた部分に挿入
してある上記ライナー管を新しいものと交換す
る。その後、成長用ライナー管を反応管に挿入す
る。このことにより反応管排出口近傍に付着した
汚れを反応管内に持ち込むことが完全に防げる。 Examples according to the present invention will be described below using a horizontal reaction tube.
The GaAs vapor phase growth apparatus will be explained. FIG. 2 shows an embodiment according to the present invention, in which the inner diameter is 40 mm.
In a reaction tube for vapor phase growth of φ, the inner diameter of the reaction tube is 45φ from 10 cm downstream from the substrate crystal position in the gas flow direction.
It is set as. A liner tube with an inner diameter of 40φ and a wall thickness of 2 mm was inserted into the part where the diameter of the reaction tube increased. When inserting the liner tube for growth into the reaction tube before the start of growth, the liner tube inserted into the portion where the inner diameter of the reaction tube has increased is replaced with a new one. The growth liner tube is then inserted into the reaction tube. This completely prevents dirt adhering to the vicinity of the reaction tube outlet from being carried into the reaction tube.
第１図に示した従来法と第２図に示した本発明
との比較実施例についてエピタキシヤル成長を繰
返し、各成長毎の成長層キヤリア濃度を求めた結
果を第３図に示す。図において縦軸は成長層キヤ
リア濃度をし、横軸はエピタキシヤル成長の繰返
し回数を示す。第３図の実験はAsCl3―Ga―H2
系について、ソース領域温度800℃、基板温度700
℃、AsCl3モル比３×10-3の成長条件で気相エピ
タキシヤル成長させたもので、曲線イが本発明
例、曲線ロが従来法での結果である。第３図のグ
ラフから本発明例が成長毎のキヤリア濃度の再現
性が良いことは明らかであり、成長領域への汚染
源の混入を防止しているため、バツクグランド不
純物レベルが一定に保たれていることがわかる。 The epitaxial growth was repeated for the comparative example of the conventional method shown in FIG. 1 and the present invention shown in FIG. 2, and the result of determining the carrier concentration of the grown layer for each growth is shown in FIG. In the figure, the vertical axis represents the carrier concentration of the grown layer, and the horizontal axis represents the number of repetitions of epitaxial growth. The experiment in Figure 3 is AsCl 3 -Ga-H 2
Regarding the system, source region temperature 800℃, substrate temperature 700℃
℃ and the AsCl 3 molar ratio of 3×10 -3 , vapor phase epitaxial growth was carried out under the growth conditions, where curve A is the result of the present invention and curve B is the result of the conventional method. From the graph in Figure 3, it is clear that the example of the present invention has good reproducibility of carrier concentration for each growth, and since contamination sources are prevented from entering the growth region, the background impurity level is kept constant. I know that there is.
以上、本発明をGaAs化合物半導体を気相成長
する場合を例にあげて説明を行つたが、他の化合
物半導体（InAs，GaP，InPなど）を初め、一般
に行なわれている気相成長用材料についても本発
明が適用されることは言うまでもない。又、縦型
反応管についても同様である。 The present invention has been explained above using the case of vapor phase growth of a GaAs compound semiconductor as an example, but other compound semiconductors (InAs, GaP, InP, etc.) and other commonly used vapor phase growth materials can also be used. It goes without saying that the present invention is also applicable to. The same applies to vertical reaction tubes.
本発明によれば、成長毎のバツクグランド不純
物レベルを一定に保つことができるので、高純度
エピタキシヤルウエハーを再現性良く得ることが
できるという効果がある。 According to the present invention, since the background impurity level can be kept constant for each growth, it is possible to obtain high-purity epitaxial wafers with good reproducibility.
第１図は従来法の気相成長装置を示す図、第２
図は本発明方法における気相成長装置を示す図、
第３図はAsCl3―Ga―H2系について気相成長さ
せた場合の成長回数とキヤリア濃度との関係を示
すグラフ図であり、曲線イは本発明例を示し、曲
線ロは比較例を示す。
１１，２１……ガリウムソース、１２，２２…
…反応管、１３，２３……成長用ライナー管、１
４，２４……基板ホルダー、１５，２５……
GaAs基板結晶、２６……本発明による補助ライ
ナー管。
Figure 1 shows a conventional vapor phase growth apparatus;
The figure shows a vapor phase growth apparatus in the method of the present invention,
Figure 3 is a graph showing the relationship between the number of growth times and the carrier concentration in the case of vapor phase growth for the AsCl 3 -Ga-H 2 system, where curve A shows the example of the present invention and curve B shows the comparative example. show. 11,21...Gallium source, 12,22...
...Reaction tube, 13, 23... Liner tube for growth, 1
4, 24...Substrate holder, 15, 25...
GaAs substrate crystal, 26...auxiliary liner tube according to the present invention.
Claims (1)
の反応管全周における直径を基板結晶が置かれて
いる領域を含めた上流側の反応管直径より大きく
してなる気相成長用反応管と、 該気相成長用反応管内に挿入されたライナー管
と、 該ライナー管と前記気相成長用反応管との間の
前記反応管直径が大なる部分に前記反応管に内接
して位置する補助管とを設けたことを特徴とする
気相成長装置。[Scope of Claims] 1. A gas cylinder in which the diameter of the entire circumference of the reaction tube on the downstream side of the substrate crystal position with respect to the gas flow direction is larger than the diameter of the reaction tube on the upstream side including the area where the substrate crystal is placed. a phase growth reaction tube; a liner tube inserted into the vapor phase growth reaction tube; A vapor phase growth apparatus characterized by being provided with an auxiliary pipe located inscribed therein.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56047072A JPS57162326A (en) | 1981-03-30 | 1981-03-30 | Vapor phase growing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56047072A JPS57162326A (en) | 1981-03-30 | 1981-03-30 | Vapor phase growing device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57162326A JPS57162326A (en) | 1982-10-06 |
| JPS6226171B2 true JPS6226171B2 (en) | 1987-06-08 |
Family
ID=12764957
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56047072A Granted JPS57162326A (en) | 1981-03-30 | 1981-03-30 | Vapor phase growing device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57162326A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60193323A (en) * | 1984-03-15 | 1985-10-01 | Nec Corp | Semiconductor vapor phase growing apparatus |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS52149968A (en) * | 1976-06-09 | 1977-12-13 | Hitachi Ltd | Heat treatment method of semiconductor wafers |
| JPS5534158A (en) * | 1978-09-01 | 1980-03-10 | Sony Corp | Vacuum reaction apparatus |
-
1981
- 1981-03-30 JP JP56047072A patent/JPS57162326A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS57162326A (en) | 1982-10-06 |
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