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JPS6227749B2 - - Google Patents
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JPS6227749B2 - - Google Patents

Info

Publication number
JPS6227749B2
JPS6227749B2 JP55168599A JP16859980A JPS6227749B2 JP S6227749 B2 JPS6227749 B2 JP S6227749B2 JP 55168599 A JP55168599 A JP 55168599A JP 16859980 A JP16859980 A JP 16859980A JP S6227749 B2 JPS6227749 B2 JP S6227749B2
Authority
JP
Japan
Prior art keywords
plating layer
nickel plating
lead frame
frame body
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP55168599A
Other languages
Japanese (ja)
Other versions
JPS5792854A (en
Inventor
Hisaharu Sakurai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP55168599A priority Critical patent/JPS5792854A/en
Publication of JPS5792854A publication Critical patent/JPS5792854A/en
Publication of JPS6227749B2 publication Critical patent/JPS6227749B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07551—Connecting or disconnecting of bond wires characterised by changes in properties of the bond wires during the connecting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/536—Shapes of wire connectors the connected ends being ball-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/5363—Shapes of wire connectors the connected ends being wedge-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/884—Die-attach connectors and bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/736—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked lead frame, conducting package substrate or heat sink
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

Landscapes

  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Lead Frames For Integrated Circuits (AREA)

Description

【発明の詳細な説明】[Detailed description of the invention]

本発明は、樹脂封止半導体装置に関する。 従来、樹脂封止半導体装置の外囲器内に封止さ
れた半導体素子は、コバール等の耐食性に優れた
材質で形成されたリードフレーム本体上に固着さ
れている。しかしながら、このような材質で形成
されたリードフレーム本体は高価であるため、近
年、鉄鋼、銅などの材質で形成されたリードフレ
ーム本体が開発されている。このように鉄鋼など
で形成されたリードフレーム本体は、腐食しやす
いため防食メツキが施されている。この防食メツ
キとしてはニツケルメツキ層を形成するものや銅
メツキ層上にニツケルメツキ層を形成する二層構
造のメツキ層が一般に採用されている。ここで、
防食メツキとしてニツケルメツキ層を形成するの
は、リードフレーム本体から外部に突出したアウ
ターリードと半導体素子とをボンデング線で接続
する際に接続部の導通を良くするために設ける銀
メツキ層の下地としてニツケルメツキ層が優れた
接続特性を有するからである。 ニツケルメツキ層の層厚は、耐防食性を向上さ
せるためには大きい程好ましいが、層厚を大きく
するとアウターリードの曲げ強度（例えば、
MIL、STD883B−2004試験で測定することがで
きる。）が低下して曲げ回数が少なくなり好まし
くない。 因に、鉄で形成されたリードフレームに銅メツ
キ層及びニツケルメツキ層を形成したリードフレ
ーム本体のアウターリードに８オンスの荷重を加
えて、銅メツキ層の層厚及びニツケルメツキ層の
層厚の変化に対する90度の曲げ角による有効曲げ
回数（アウターリードが破断するまでの曲げ回
数）を調べたところ下記表に示す結果が得られ
た。 The present invention relates to a resin-sealed semiconductor device. Conventionally, a semiconductor element sealed in an envelope of a resin-sealed semiconductor device is fixed onto a lead frame body made of a material with excellent corrosion resistance, such as Kovar. However, since lead frame bodies made of such materials are expensive, lead frame bodies made of materials such as steel and copper have been developed in recent years. The main body of the lead frame made of steel or the like is easily corroded, so it is coated with anti-corrosion plating. As this anti-corrosion plating, a plating layer having a nickel plating layer or a two-layer structure in which a nickel plating layer is formed on a copper plating layer is generally employed. here,
The nickel plating layer is formed as an anti-corrosion plating layer as a base for the silver plating layer, which is provided to improve conductivity at the connection part when connecting the outer lead protruding from the lead frame body to the semiconductor element using a bonding wire. This is because the layer has excellent connection properties. The thickness of the nickel plating layer is preferably as large as possible in order to improve corrosion resistance, but increasing the thickness increases the bending strength of the outer lead (e.g.
Can be measured by MIL, STD883B-2004 test. ) decreases and the number of bends decreases, which is undesirable. Incidentally, by applying a load of 8 ounces to the outer lead of a lead frame body made of iron and having a copper plating layer and a nickel plating layer formed thereon, the changes in the thickness of the copper plating layer and the layer thickness of the nickel plating layer were measured. When we investigated the effective number of bends (the number of bends until the outer lead breaks) using a 90 degree bending angle, we obtained the results shown in the table below.

【表】 同表から明らかな如く、ニツケルメツキ層の層
厚が約１μｍ大きくなると有効曲げ回数は、平均
0.65回減少する。このため従来の樹脂封止半導体
装置では、リードフレーム本体のニツケルメツキ
層の層厚を大きくすると耐食性を向上させること
はできるが、アウターリードの有効曲げ回数が著
しく低下する欠点があつた。 本発明は、かかる点に鑑みてなされたものでア
ウターリードの有効曲げ回数が多く、しかも耐食
性に優れたリードフレーム本体で形成された樹脂
封止半導体装置を提供するものである。 以下、本発明の実施例を図面を参照して説明す
る。 図は、本発明の一実施例の樹脂封止半導体装置
である。図中１は、鉄鋼などの鉄素材で形成され
リードフレーム本体である。リードフレーム本体
１の表面全面には、銅メツキ層２が形成されてい
る。銅メツキ層２の表面にはニツケルメツキ層３
が形成されている。ニツケルメツキ層３の層厚
は、後述する外囲器９から外部に突出してアウタ
ーリード４となる部分では２μｍ以下の層厚に設
定されている。アウターリード４となる部分のニ
ツケルメツキ層３ａの層厚を２μｍよりも大きく
するとアウターリード４の有効曲げ回数が著しく
少なくなり好ましくない。リードフレーム本体１
の中央部のアイランド１ａとなる部分には、ニツ
ケルメツキ層３上に銀メツキ層５が形成されてお
り、銀メツキ層５上にはマウント部材６を介して
半導体素子７が固着されている。アイランド１ａ
に対向するリードフレーム本体１の領域のニツケ
ルメツキ層３上には、銀メツキ層５が形成されて
おり、この銀メツキ層５と半導体素子間にはボン
デイング線８が架設されている。半導体素子７、
ボンデイング線８及びリードフレーム本体１は、
アウターリード４になる部分が外部に突出するよ
うにしてエポキシ樹脂などで形成された外囲器９
で封止されている。外囲器９から外部に突出した
アウターリード４のニツケルメツキ層３ａ上に
は、半田層１０が被覆されている。ここで、アウ
ターリード４上のニツケルメツキ層３の層厚を
1.2μｍ以下に形成する方法としては、リードフ
レーム本体１の全表面にニツケルメツキ層３を形
成してアイランド１ａ上に半導体素子７を形成
し、この半導体素子７とリードフレーム本体１の
所定領域間にボンデイング線８を架設してこれら
を外囲器９で一体に封止し、外囲器９から外部に
突出したアウターリード４の曲げ加工を施した後
に、例えば塩化第２鉄等のエツチング液でアウタ
ーリード４上のニツケルメツキ層３をエツチング
により除去するのが望ましい。 このように構成された樹脂封止半導体装置１１
によれば、アウターリード４の表面に形成された
ニツケルメツキ層３ａは十分に薄肉になつている
のでアウターリード４の有効曲げ回数を向上させ
ることができる。また、アウターリード４のニツ
ケルメツキ層３ａ上には半田層１０が形成されて
おり、外囲器９内のリードフレーム本体１は厚肉
のニツケルメツキ層３で覆われているので耐食性
にも優れている。更に、アウターリード４上のニ
ツケルメツキ層３に施すエツチング処理によつて
外囲器９のバリを除去することができるので、半
田層１０をアウターリード４の外表面全面に完全
に形成せしめて耐食性の向上作用を助長すること
ができる。 以上説明した如く、本発明に係る樹脂封止半導
体装置によれば、アウターリード上のニツケルメ
ツキ層を十分に薄肉にしてその上に半田層を形成
したので、アウターリードの有効曲げ回数を増加
させ、しかも耐食性を向上させることができるも
のである。 [Table] As is clear from the table, when the layer thickness of the nickel plating layer increases by about 1 μm, the average number of bending increases.
Decreased by 0.65 times. For this reason, in conventional resin-sealed semiconductor devices, corrosion resistance can be improved by increasing the thickness of the nickel plating layer of the lead frame body, but the disadvantage is that the effective number of bends of the outer lead is significantly reduced. The present invention has been made in view of the above problems, and provides a resin-sealed semiconductor device formed of a lead frame body that has a large number of effective bending times for the outer leads and has excellent corrosion resistance. Embodiments of the present invention will be described below with reference to the drawings. The figure shows a resin-sealed semiconductor device according to an embodiment of the present invention. In the figure, reference numeral 1 indicates a lead frame body made of iron material such as steel. A copper plating layer 2 is formed on the entire surface of the lead frame body 1. A nickel plating layer 3 is formed on the surface of the copper plating layer 2.
is formed. The thickness of the nickel plating layer 3 is set to 2 μm or less in a portion that protrudes from the envelope 9 to the outside and becomes the outer lead 4, which will be described later. If the layer thickness of the nickel plating layer 3a in the portion that will become the outer lead 4 is greater than 2 μm, the number of effective bending times of the outer lead 4 will be significantly reduced, which is not preferable. Lead frame body 1
A silver plating layer 5 is formed on the nickel plating layer 3 in the central part of the island 1a, and a semiconductor element 7 is fixed on the silver plating layer 5 via a mounting member 6. island 1a
A silver plating layer 5 is formed on the nickel plating layer 3 in the area of the lead frame body 1 facing the lead frame body 1, and a bonding line 8 is installed between the silver plating layer 5 and the semiconductor element. semiconductor element 7,
The bonding wire 8 and the lead frame body 1 are
An envelope 9 made of epoxy resin or the like so that the portion that will become the outer lead 4 protrudes to the outside.
is sealed with. A solder layer 10 is coated on the nickel plating layer 3a of the outer lead 4 protruding from the envelope 9 to the outside. Here, the layer thickness of the nickel plating layer 3 on the outer lead 4 is
A method for forming a thickness of 1.2 μm or less is to form a nickel plating layer 3 on the entire surface of the lead frame body 1, form a semiconductor element 7 on the island 1a, and then form a layer between the semiconductor element 7 and a predetermined area of the lead frame body 1. After constructing the bonding wires 8 and sealing them together with an envelope 9, and bending the outer leads 4 that protrude outside from the envelope 9, the wires are etched with an etching liquid such as ferric chloride. It is desirable to remove the nickel plating layer 3 on the outer lead 4 by etching. Resin-sealed semiconductor device 11 configured in this way
According to the method, since the nickel plating layer 3a formed on the surface of the outer lead 4 is sufficiently thin, the effective number of bending times of the outer lead 4 can be increased. Further, a solder layer 10 is formed on the nickel plating layer 3a of the outer lead 4, and the lead frame body 1 in the envelope 9 is covered with the thick nickel plating layer 3, so it has excellent corrosion resistance. . Furthermore, the burrs on the envelope 9 can be removed by etching the nickel plating layer 3 on the outer lead 4, so the solder layer 10 can be completely formed on the entire outer surface of the outer lead 4, resulting in corrosion resistance. It can promote the improvement effect. As explained above, according to the resin-sealed semiconductor device according to the present invention, the nickel plating layer on the outer lead is made sufficiently thin and the solder layer is formed thereon, so that the effective number of bending times of the outer lead is increased. Moreover, corrosion resistance can be improved.

【図面の簡単な説明】[Brief explanation of the drawing]

図は、本発明の一実施例の断面図である。 １……リードフレーム本体、２……銅メツキ
層、３，３ａ……ニツケルメツキ層、４……アウ
ターリード、５……銀メツキ層、６……マウント
部材、７……半導体素子、８……ボンデイング
線、９……外囲器、１０……半田層、１１……樹
脂封止半導体装置。 The figure is a sectional view of one embodiment of the present invention. DESCRIPTION OF SYMBOLS 1... Lead frame main body, 2... Copper plating layer, 3, 3a... Nickel plating layer, 4... Outer lead, 5... Silver plating layer, 6... Mounting member, 7... Semiconductor element, 8... Bonding wire, 9...Envelope, 10...Solder layer, 11 ...Resin-sealed semiconductor device.

Claims (1)

【特許請求の範囲】[Claims] １ 半導体素子が固着された鉄素材からなるリー
ドフレーム本体と、該リードフレーム本体及び前
記半導体素子を封止する外囲器と、該外囲器から
外部に突出したアウターリードと、該アウターリ
ードの表面に形成された厚さ２μｍ以下のニツケ
ルメツキ層と、該ニツケルメツキ層上に形成され
た半田層とを具備することを特徴とする樹脂封止
半導体装置。1. A lead frame body made of iron material to which a semiconductor element is fixed, an envelope that seals the lead frame body and the semiconductor element, an outer lead protruding from the envelope, and a A resin-sealed semiconductor device comprising: a nickel plating layer with a thickness of 2 μm or less formed on a surface; and a solder layer formed on the nickel plating layer.
JP55168599A 1980-11-29 1980-11-29 Plastic molded type semiconductor device Granted JPS5792854A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55168599A JPS5792854A (en) 1980-11-29 1980-11-29 Plastic molded type semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55168599A JPS5792854A (en) 1980-11-29 1980-11-29 Plastic molded type semiconductor device

Publications (2)

Publication Number Publication Date
JPS5792854A JPS5792854A (en) 1982-06-09
JPS6227749B2 true JPS6227749B2 (en) 1987-06-16

Family

ID=15871034

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55168599A Granted JPS5792854A (en) 1980-11-29 1980-11-29 Plastic molded type semiconductor device

Country Status (1)

Country Link
JP (1) JPS5792854A (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57169265A (en) * 1981-04-10 1982-10-18 Hitachi Cable Ltd Lead frame for semiconductor
JPS59149042A (en) * 1983-02-15 1984-08-25 Hitachi Cable Ltd Lead frame for semiconductor
JPS63160367A (en) * 1986-12-24 1988-07-04 Hitachi Ltd Plastic-sealed semiconductor device
JPS6412563A (en) * 1987-07-07 1989-01-17 Sumitomo Metal Mining Co Nickel plating of lead frame
TW401634B (en) * 1997-04-09 2000-08-11 Sitron Prec Co Ltd Lead frame and its manufacture method

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL7308700A (en) * 1973-06-22 1974-12-24

Also Published As

Publication number Publication date
JPS5792854A (en) 1982-06-09

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