JPS6235286B2 - - Google Patents
Info
- Publication number
- JPS6235286B2 JPS6235286B2 JP54043436A JP4343679A JPS6235286B2 JP S6235286 B2 JPS6235286 B2 JP S6235286B2 JP 54043436 A JP54043436 A JP 54043436A JP 4343679 A JP4343679 A JP 4343679A JP S6235286 B2 JPS6235286 B2 JP S6235286B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- transmitting
- melting point
- point substance
- receiving
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Description
【発明の詳細な説明】
本発明は基板表面を表面波が伝播する表面波装
置の封止法に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for sealing a surface acoustic wave device in which a surface acoustic wave propagates on a substrate surface.
表面波装置は表面波を送・受信する送・受信電
極の形状等に工夫を凝す事に依つて複雑な周波数
選択特性を容易に得る事が出来るので、例えば従
来5〜8個のLC回路から構成されていたテレビ
ジヨン受像機の映像中間周波フイルタを1個の表
面波装置で実現する事が可能となり、実用化され
つつある。 Surface wave devices can easily obtain complex frequency selection characteristics by devising the shapes of the transmitting and receiving electrodes that transmit and receive surface waves. It has now become possible to realize the video intermediate frequency filter of a television receiver, which was previously constructed with a single surface wave device, and it is being put into practical use.
第1図は基本的な表面波装置を示し、1は
LiTaO3単結晶、PZTセラミツク、ZnO薄膜、水
晶等の圧電物質から成る基板、2,3は該基板1
の表面に対向する如く設けられ表面波を送・受信
するインターデイジタルトランスジユーサから成
る送・受信電極、4,4は該相対向する送・受信
電極2,3の外側基板1端面に配置されたアルキ
ツド樹脂等から成る吸収体である。 Figure 1 shows the basic surface wave device, 1 is
A substrate made of a piezoelectric material such as LiTaO 3 single crystal, PZT ceramic, ZnO thin film, crystal, etc., 2 and 3 are the substrate 1
Transmitting/receiving electrodes 4, 4 consisting of interdigital transducers for transmitting/receiving surface waves, which are provided so as to face the surfaces of It is an absorbent material made of alkyd resin, etc.
斯る構造の表面波装置に於いて、送信電極2に
電気信号が印加されると、該送信電極2は表面波
を励起し受信電極3及び該電極3と反対方向の基
板1端面にそれを伝播せしめる。受信電極3に到
達した表面波は該電極3にてその大部分が電気信
号に復元される。然し一部の僅かな表面波は該受
信電極3を通過し基板1端面に到達する。この表
面波は該基板1端面で反射し再度受信電極3に伝
播する。受信電極3に伝播したこの僅かな表面波
も電気信号に変換されるが先に変換された電気信
号に比べ或る遅延時間を有しているので、表面波
装置としての電気的特性に劣化を招く。一方、送
信電極2から直接基板1端面に伝播した表面波も
同様に該基板1端面で反射し、送信電極2を経て
受信電極3に到達する。これ等の基板1端面での
表面波の反射を防止する為に、送・受信電極2,
3の外側基板1端面に上記吸収体4,4が設けら
れており、上記表面波を反射する以前に吸収して
いる。 In a surface wave device having such a structure, when an electric signal is applied to the transmitting electrode 2, the transmitting electrode 2 excites a surface wave and transmits it to the receiving electrode 3 and the end face of the substrate 1 in the opposite direction to the electrode 3. Let it spread. Most of the surface waves that have reached the receiving electrode 3 are restored to electrical signals at the electrode 3. However, a small portion of the surface waves passes through the receiving electrode 3 and reaches the end surface of the substrate 1. This surface wave is reflected by the end face of the substrate 1 and propagates to the receiving electrode 3 again. This slight surface wave that propagated to the receiving electrode 3 is also converted into an electrical signal, but it has a certain delay time compared to the electrical signal that was converted first, so the electrical characteristics of the surface wave device deteriorate. invite On the other hand, the surface waves propagated directly from the transmitting electrode 2 to the end surface of the substrate 1 are similarly reflected at the end surface of the substrate 1 and reach the receiving electrode 3 via the transmitting electrode 2. In order to prevent reflection of surface waves at the end surface of these substrates 1, transmitting/receiving electrodes 2,
The absorbers 4, 4 are provided on the end face of the outer substrate 1 of No. 3, and absorb the surface waves before reflecting them.
この表面波装置を封止する場合、表面波の送・
受信及びその伝播は上記の如く基板1表面で行な
われる為に、基板1表面付近を表面波に影響を与
えないように空隙にする必要がある。従来の封止
方法としてはトランジスタやIC等に使用されて
いるTOパツケージに組み込む方法と樹脂でモー
ルドする方法が存在する。 When sealing this surface wave device, surface wave transmission and
Since the reception and its propagation are performed on the surface of the substrate 1 as described above, it is necessary to create a gap near the surface of the substrate 1 so as not to affect the surface waves. Conventional sealing methods include a method of incorporating into a TO package used for transistors, ICs, etc., and a method of molding with resin.
上記封止法の内、TOパツケージに組み込む封
止法に於いては、該TOパツケージ自身の価格が
高く、更にハーメチツクシールを施こせば価格的
にもう一つの封止法であるモールド法に比べかな
り高価になる。 Among the above sealing methods, the TO package itself is expensive, and if a hermetic seal is applied, another cost-effective sealing method is the molding method. considerably more expensive than.
この安価なモールド法に依つて封止された表面
波装置の一例を第2図に示し同図に於いて、5は
第1図に詳記した表面波装置6をダイボンデイン
グするマウント板、7は上記表面波装置6を覆い
基版1表面に空隙を形成せしめる保護キヤツプ、
8は上記マウント板5及び保護キヤツプ7の外壁
をモールドするエポキシ樹脂等のモールド体であ
る。 An example of a surface acoustic wave device sealed by this inexpensive molding method is shown in FIG. is a protective cap that covers the surface wave device 6 and forms a gap on the surface of the base plate 1;
Reference numeral 8 denotes a molded body made of epoxy resin or the like for molding the outer wall of the mount plate 5 and the protective cap 7.
然し乍ら、このモールドに依る封止法では基板
1表面に空隙を形成する保護キヤツプ7を設けな
ければならない許りか、該保護キヤツプ7をマウ
ント板5に何らかの手段で保持したままモールド
しなければならないと云う製造工程面での欠点を
有していた。 However, in this mold-based sealing method, it is necessary to provide the protective cap 7 that forms a gap on the surface of the substrate 1, and the molding must be carried out while the protective cap 7 is held on the mount plate 5 by some means. It had the following drawbacks in terms of manufacturing process.
本発明は斯る点に鑑みたモールド法にて表面波
装置を封止するもので、以下に第3図以降を参照
しつつ詳述する。 The present invention seals a surface acoustic wave device using a molding method in view of this point, and will be described in detail below with reference to FIG. 3 and subsequent figures.
本発明に用いられる表面波装置は第1図のもの
と少し異なり、基板1と送・受信電極2,3と、
から成り、吸収体4,4を設けていない。その理
由は後述の説明から明らかになるであろう。 The surface acoustic wave device used in the present invention is slightly different from that shown in FIG.
, and no absorbers 4, 4 are provided. The reason will become clear from the explanation below.
先ず、上記の如き送・受信電極2,3を基板1
表面に対向配置せしめた表面波装置6をマウント
板5にダイボンデイングする。次に、送・受信電
極2,3及び該両電極2,3間の表面波伝播路上
に、加熱する事に依つて溶融揮発するパラフイン
等の揮発性低融点物質9を塗布する(第3図a,
b)。この塗布箇所は図からも明らかな如く、
送・受信電極2,3の外側基板1端面即ち、第1
図に示した表面波装置に於いて、吸収体4,4が
設けられていた箇所を少くとも含んでいない。然
る後、これ等全体を、多孔性で上記揮発性低融点
物質9の揮発ガスを放散せしめるモールド体8、
例えばフエノール樹脂で、塗布又はデイツプ法を
用いてモールドする(第4図)。該モールド体8
は上記の如く基板1表面の端面の内、少くとも吸
収体4,4が設けられていた送・受信電極2,3
の外側基板1端面を被覆する如くモールドしてい
る。次に、モールドされた表面波装置を真空中に
て加熱し揮発性低融点物質9を溶融揮発せしめ、
揮発ガスを多孔性のモールド体8を通じて外部へ
放散せしめて送・受信電極2,3及び表面波の伝
播路上に空隙を形成し、表面波装置のモールド封
止を完了する(第5図)。 First, the transmitting/receiving electrodes 2 and 3 as described above are placed on the substrate 1.
The surface acoustic wave device 6, which is disposed opposite to the surface, is die-bonded to the mount plate 5. Next, a volatile low-melting substance 9 such as paraffin, which melts and evaporates when heated, is applied to the transmitting/receiving electrodes 2, 3 and the surface wave propagation path between the two electrodes 2, 3 (see Fig. 3). a,
b). As is clear from the figure, this application area is
The end surface of the outer substrate 1 of the transmitting/receiving electrodes 2 and 3, that is, the first
In the surface wave device shown in the figure, at least the portion where the absorbers 4, 4 were provided is not included. After that, the whole is molded into a molded body 8 which is porous and allows the volatile gas of the volatile low-melting substance 9 to be dissipated.
For example, it is molded using a phenol resin by coating or dipping (FIG. 4). The mold body 8
As mentioned above, among the end faces of the surface of the substrate 1, at least the transmitting/receiving electrodes 2 and 3 on which the absorbers 4 and 4 were provided
It is molded so as to cover the end surface of the outer substrate 1. Next, the molded surface wave device is heated in a vacuum to melt and volatilize the volatile low melting point substance 9,
Volatile gas is diffused to the outside through the porous mold body 8 to form voids on the transmitting/receiving electrodes 2 and 3 and on the surface wave propagation path, completing mold sealing of the surface acoustic wave device (FIG. 5).
上記揮発性低融点物質9は加熱揮発の際、一部
モールド体8中に滞留する事があるが表面波装置
ではその電気的特性の面で、上記滞留に依る影響
は認められない。尚必要に応じて、第5図の封止
完了後、更に表面波装置全体を撥水性樹脂等で被
覆しても良い。 When the volatile low melting point substance 9 is heated and volatilized, a portion thereof may remain in the molded body 8, but in the surface wave device, no influence due to the above-mentioned retention is observed in terms of its electrical characteristics. If necessary, after the sealing shown in FIG. 5 is completed, the entire surface acoustic wave device may be further coated with a water-repellent resin or the like.
而して、送信電極2から伝播された表面波は受
信電極3にて電気信号に復元されると共に、該受
信電極3を透過する僅かな表面波は基板1端面に
伝播する。この基板1端面に伝播して来た表面波
は従来に於いては吸収体4に依つて吸収せしめら
れていたが、本発明に於いては該吸収体4は存在
しないが、上記基板1端面を被覆しているモール
ド体8に依つて上記表面波の吸収が行なわれる。
また、受信電極3と反対側の基板1端面に直接伝
播した表面波も同様にモールド体8にて吸収され
る。 Thus, the surface wave propagated from the transmitting electrode 2 is restored to an electrical signal at the receiving electrode 3, and a small amount of the surface wave transmitted through the receiving electrode 3 propagates to the end surface of the substrate 1. Conventionally, the surface waves propagated to the end surface of the substrate 1 are absorbed by the absorber 4, but in the present invention, the absorber 4 is not present, but the surface waves propagated to the end surface of the substrate 1 are absorbed by the absorber 4. The surface waves are absorbed by the molded body 8 covering the surface.
Further, the surface waves directly propagated to the end surface of the substrate 1 on the opposite side from the receiving electrode 3 are also absorbed by the molded body 8.
他の実施例として、上記揮発性低融点物質9の
代りにワツクス等の低融点物質を用い、真空中に
てその融点以上に加熱すると該低融点物質は溶融
しその溶融液が多孔性のモールド体8内に浸透し
て行く。更に加熱を持続すると一部の溶融液は揮
発しモールド体8外部に放散される。その後、加
熱を停止すると低融点物質の溶融液はモールド体
8内で滞留し凝固する。従つて低融点物質が塗布
されていた送・受信電極2,3及び該両電極2,
3の表面波の伝播路上に空隙が形成され表面波装
置の封止が完了する。 As another embodiment, a low melting point substance such as wax is used instead of the volatile low melting point substance 9, and when heated in vacuum to a temperature higher than its melting point, the low melting point substance melts and the molten liquid forms a porous mold. It penetrates into the body 8. If the heating is continued further, a part of the molten liquid will volatilize and be radiated outside the mold body 8. Thereafter, when the heating is stopped, the molten liquid of the low melting point substance stays in the mold body 8 and solidifies. Therefore, the transmitting/receiving electrodes 2, 3 and both electrodes 2, coated with a low melting point substance,
A gap is formed on the propagation path of the surface wave in step 3, and the sealing of the surface wave device is completed.
上記の如くパラフイン等の揮発性低融点物質9
若しくはワツクス等の低融点物質を真空中で加熱
することは、両低融点物質の揮発放散若しくは含
浸速度を速めて作業能率を向上させる事が出来る
と共に、モールド体8としてフエノール樹脂の如
き熱硬化性のものを選べば該モールド体8の硬化
と同時に上記両低融点物質の揮発若しくは溶融が
実行出来、極めて有効である。 As mentioned above, volatile low melting point substances such as paraffin 9
Alternatively, heating a low melting point substance such as wax in a vacuum can increase the volatilization rate or impregnation rate of both low melting point substances and improve work efficiency. If such a material is selected, volatilization or melting of both of the low melting point substances mentioned above can be carried out at the same time as the mold body 8 is cured, which is extremely effective.
尚、以上の説明に於いては低融点物質9の塗布
箇所を送・受信電極2,3及び該両電極2,3間
の基板上としたが、送信電極2が第1図の如くア
ポタイズ法に依る重み付けが施こされておれば、
図中斜線で示す電極指が交差せず表面波の送信に
実質的に寄与しない部分を除いた実質的な電極上
への塗布でも可能である。 In the above explanation, the low melting point substance 9 was applied on the transmitting/receiving electrodes 2, 3 and the substrate between the two electrodes 2, 3. If weighting is applied according to
It is also possible to apply the coating material to substantially the entire electrode except for the portion where the electrode fingers do not intersect and do not substantially contribute to the transmission of surface waves, which is indicated by diagonal lines in the figure.
本発明封止法は以上の説明から明らかな如く、
表面波の送・受信並びに伝播に係わる基板表面に
揮発性低融点物質若しくは低融点物質を塗布し、
これ等の揮発ガス若しくは溶融液を放散又は含浸
するモールド体でモールド後、夫々の融点以上に
加熱せしめて上記両低融点物質が塗布されていた
箇所を空隙としたので、従来必要としていた保護
キヤツプや、該キヤツプの保持手段を用いる事無
く表面波装置を封止する事が出来る。しかも、上
記モールド体は送・受信電極の外側基板端面をも
被覆する構造となつているので、このモールド体
が該基板端面で反射する表面波を吸収する吸収体
としても働き、専用の吸収体を設けなくて済む。 As is clear from the above explanation, the sealing method of the present invention is as follows:
Applying a volatile low-melting point substance or a low-melting point substance to the surface of the substrate involved in the transmission, reception, and propagation of surface waves,
After molding with a mold body that diffuses or impregnates these volatile gases or molten liquids, it is heated above the respective melting points to create voids in the areas where the above-mentioned low melting point substances were applied, eliminating the need for a protective cap that was previously required. Also, the surface acoustic wave device can be sealed without using the cap holding means. Moreover, since the molded body is structured to cover the outer substrate end face of the transmitting/receiving electrode, this molded body also acts as an absorber to absorb the surface waves reflected from the substrate end face, and a dedicated absorber is used. There is no need to set up
また、上記モールド体に多孔質の熱硬化性樹脂
を使用しているので、その固化を低融点物質の揮
発及び溶融と同工程で同時に行なうことができ、
しかも、その低融点物質の放散やモールド体への
含浸封入を短時間で確実に行なうことができる。
従つて本発明にて表面波装置の封止を行なえば部
品点数の削減、作業工程の減縮が図れ大幅なコス
トダウンを可能にする。 Furthermore, since a porous thermosetting resin is used in the molded body, its solidification can be performed at the same time as the volatilization and melting of the low melting point substance,
Moreover, the low melting point substance can be diffused and impregnated into the molded body reliably in a short period of time.
Therefore, if the surface acoustic wave device is sealed according to the present invention, the number of parts and work steps can be reduced, making it possible to significantly reduce costs.
第1図は従来の表面波装置を示す正面図、第2
図は従来のモールド法を説明する為の断面図、第
3図a,bは本発明封止法の一工程を示す断面図
及び正面図、第4図同他の工程を示す断面図、第
5図は本発明に依り封止された表面波装置を示す
断面図で、1は基板、2,3は送・受信電極、6
は表面波装置、8はモールド体、9は揮発性低融
点物質を夫々示す。
Figure 1 is a front view of a conventional surface wave device;
The figure is a sectional view for explaining the conventional molding method, FIGS. 3a and 3b are sectional views and front views showing one step of the sealing method of the present invention, and FIG. FIG. 5 is a cross-sectional view showing a surface acoustic wave device sealed according to the present invention, in which 1 is a substrate, 2 and 3 are transmitting and receiving electrodes, and 6
8 represents a surface wave device, 8 represents a molded body, and 9 represents a volatile low melting point substance.
Claims (1)
けられた基板をモールドするに際し、表面波が到
達する基板端部を除き実質的に送・受信電極上及
び該送・受信電極間の表面波伝播路上に先ず揮発
性低融点物質を塗布し、次いで該低融点物質上及
び上記基板端部を含む全体を多孔質の熱硬化性樹
脂からなるモールド体でモールドし、その後真空
中で加熱することによりモールド体を硬化せしめ
ると共に該モールド体を介して上記低融点物質の
揮発ガスを外部に放散せしめることを特徴とした
表面波装置の封止法。 2 表面波を送・受信する送受信電極が表面に設
けられた基板をモールドするに際し、表面波が到
達する基板端部を除き実質的に送・受信電極上及
び該送・受信電極間の表面波伝播路上に先ず低融
点物質を塗布し、次いで該低融点物質上及び上記
基板端部を含む全体を多孔質の熱硬化性樹脂から
なるモールド体でモールドし、その後真空中で加
熱することによりモールド体を硬化せしめると共
に、前記低融点物質が溶融されて上記モールド体
内に含浸されることを特徴とした表面波装置の封
止法。[Claims] 1. When molding a substrate on which a transmitting/receiving electrode for transmitting/receiving surface waves is provided, the substrate is substantially over the transmitting/receiving electrode and the transmitting/receiving electrode except for the edge of the substrate where the surface wave reaches. First, a volatile low-melting point substance is applied on the surface wave propagation path between the receiving electrodes, and then the entire surface including the low-melting point substance and the edge of the substrate is molded with a mold body made of porous thermosetting resin. 1. A method for sealing a surface acoustic wave device, comprising curing a molded body by heating in a vacuum and dissipating volatile gas of the low melting point substance to the outside through the molded body. 2. When molding a substrate on which a transmitting/receiving electrode for transmitting and receiving surface waves is provided, the surface waves are substantially formed on the transmitting/receiving electrode and between the transmitting/receiving electrodes, except for the edge of the substrate where the surface wave reaches. First, a low melting point substance is applied onto the propagation path, and then the entire area including the low melting point substance and the edge of the substrate is molded with a mold body made of porous thermosetting resin, and then the mold is molded by heating in vacuum. A method for sealing a surface acoustic wave device, characterized in that the mold body is hardened and the low melting point substance is melted and impregnated into the mold body.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4343679A JPS55135410A (en) | 1979-04-09 | 1979-04-09 | Sealing method for surface wave device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4343679A JPS55135410A (en) | 1979-04-09 | 1979-04-09 | Sealing method for surface wave device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS55135410A JPS55135410A (en) | 1980-10-22 |
| JPS6235286B2 true JPS6235286B2 (en) | 1987-07-31 |
Family
ID=12663638
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4343679A Granted JPS55135410A (en) | 1979-04-09 | 1979-04-09 | Sealing method for surface wave device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS55135410A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5996930U (en) * | 1982-12-21 | 1984-06-30 | 松下電器産業株式会社 | surface acoustic wave device |
| JP2009021333A (en) * | 2007-07-11 | 2009-01-29 | Nec Electronics Corp | Method of manufacturing optical coupling apparatus, and optical coupling apparatus |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4933236A (en) * | 1972-07-28 | 1974-03-27 | ||
| JPS5178993A (en) * | 1974-12-30 | 1976-07-09 | Matsushita Electric Industrial Co Ltd | Danseihyomenhadebaisuno seizohoho |
-
1979
- 1979-04-09 JP JP4343679A patent/JPS55135410A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS55135410A (en) | 1980-10-22 |
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