JPS6122865B2 - - Google Patents
Info
- Publication number
- JPS6122865B2 JPS6122865B2 JP55020255A JP2025580A JPS6122865B2 JP S6122865 B2 JPS6122865 B2 JP S6122865B2 JP 55020255 A JP55020255 A JP 55020255A JP 2025580 A JP2025580 A JP 2025580A JP S6122865 B2 JPS6122865 B2 JP S6122865B2
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- resin
- solid
- lid
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W95/00—Packaging processes not covered by the other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/851—Dispositions of multiple connectors or interconnections
- H10W72/874—On different surfaces
- H10W72/884—Die-attach connectors and bond wires
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
- H10W90/734—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked insulating package substrate, interposer or RDL
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
- H10W90/754—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Light Receiving Elements (AREA)
Description
【発明の詳細な説明】
本発明は半導体装置の製造方法、とくに半導体
デバイスを収納した容器の封止方法に関するもの
で、封止工程での特性変動を防止することを目的
とする。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for manufacturing a semiconductor device, and particularly to a method for sealing a container containing a semiconductor device, and aims to prevent characteristic fluctuations during the sealing process.
特に光導電膜を表面に形成した固体撮像素子、
さらには表面に光学フイルターを接着した固体撮
像素子を収納した容器の封止工程における特性変
動を防止することを目的とする。 In particular, solid-state imaging devices with a photoconductive film formed on their surfaces;
A further object of the present invention is to prevent characteristic fluctuations during the sealing process of a container containing a solid-state imaging device with an optical filter adhered to the surface.
半導体素子を収納した容器の従来よりの封止に
関し、特にセラミツクパツケージと呼ばれている
収納容器に関して第1図をもとに説明する。第1
図はセラミツクパツケージ1に半導体デバイス2
を接着剤3で固定し、金属細線4でデバイス2上
の電極と外部リード間を接続したものに関し、封
止した構造を示した。 The conventional sealing of a container containing a semiconductor device, particularly a storage container called a ceramic package, will be explained with reference to FIG. 1st
The figure shows a ceramic package 1 and a semiconductor device 2.
A sealed structure is shown in which the electrodes on the device 2 are fixed with an adhesive 3 and the electrodes on the device 2 and the external leads are connected with a thin metal wire 4.
第1図Aはガラス蓋5を樹脂8で接着した例で
あり、ガラス蓋5及びパツケージ1の一部に形成
されたメタライズ層7,6は特になくとも良い。
別の方法としてメタライズ層6,7の間に薄い軟
金属(例えばインジユーム箔)を挿入し、加圧封
止することもできる。 FIG. 1A shows an example in which a glass lid 5 is bonded with a resin 8, and the metallized layers 7 and 6 formed on a part of the glass lid 5 and the package 1 may be omitted.
Alternatively, a thin soft metal (for example, indium foil) may be inserted between the metallized layers 6 and 7 and sealed under pressure.
第1図Bは金属板11の中央部を抜いておきそ
の部分にガラス板12を予じめ貼付けた蓋を用
い、低融点半田13で封じた例である。 FIG. 1B shows an example in which the central part of the metal plate 11 is cut out, a lid is used in which a glass plate 12 is pasted in advance, and the lid is sealed with low melting point solder 13.
以上述べた従来例において、蓋の周辺部のみ樹
脂接着剤で封止する方法は比較的低温(例えば
100℃程度)で樹脂を硬化させうるが、耐水耐湿
性が弱く、一般のMOS ISIでは問題ない場合も
あるが、光導電膜付固体撮像素子では大きい問題
となる。さらに有機モザイクフイルターを貼付け
た固体撮像素子では80℃以上に温度を上げること
ができないため、この方法を採用することができ
ない。また、同様の理由により低融点半田法もフ
イルター付固体撮像素子を収納した容器の封止法
として用いることはできない。 In the conventional example described above, the method of sealing only the peripheral part of the lid with resin adhesive is relatively low temperature (e.g.
Although the resin can be cured at temperatures (approximately 100℃), its water and moisture resistance is weak, and although this may not be a problem for general MOS ISI, it becomes a major problem for solid-state image sensors with photoconductive films. Furthermore, this method cannot be used with a solid-state image sensor with an organic mosaic filter attached, as the temperature cannot be raised above 80°C. Further, for the same reason, the low melting point soldering method cannot be used as a sealing method for a container containing a solid-state image sensor with a filter.
本発明の上記従来例の欠点を完全になくした方
法を提供するもので、第2図に一実施例の断面構
造図を工程順に示す。紫外線硬化型接着剤として
は一般によく知られている変成アクリレートを主
成分とするものが使用される。前記接着剤は
10000μm/cmの紫外線を照射することにより10
〜15secで硬化させることができる。 The present invention provides a method that completely eliminates the drawbacks of the above-mentioned conventional examples, and FIG. 2 shows a cross-sectional structural diagram of one embodiment in the order of steps. As the ultraviolet curable adhesive, one whose main component is a well-known modified acrylate is used. The adhesive is
10 by irradiating ultraviolet light of 10000μm/cm
Can be cured in ~15 seconds.
第2図Aは収納容器21の所定部にフイルター
24を接着剤25で接着固定した固体撮像素子2
2を固定した状態を示す。 FIG. 2A shows a solid-state image sensor 2 in which a filter 24 is adhesively fixed to a predetermined part of a storage container 21 with an adhesive 25.
2 is shown fixed.
第2図Bは紫外線硬化型樹脂27を充填した状
態を示したが、樹脂の面は固体撮像素子より充分
上にでていることが望ましい。 Although FIG. 2B shows a state in which the ultraviolet curable resin 27 is filled, it is desirable that the surface of the resin is sufficiently exposed above the solid-state image sensor.
次に第2図Cに示す如くガラス蓋28をかぶせ
紫外線29を照射すれば全体が硬化し、封視工程
を完了する。ガラス蓋28とフイルター24との
ギヤツプは小さい程硬化が早く、0.5mm以下が望
ましい。 Next, as shown in FIG. 2C, a glass lid 28 is covered and ultraviolet rays 29 are irradiated to harden the entire structure, completing the sealing process. The smaller the gap between the glass lid 28 and the filter 24, the faster the curing process, and preferably 0.5 mm or less.
第3図は第二の実施例により封止した場合であ
り紫外線硬化型樹脂31が固体撮像素子上と、封
止部にのみ塗布されて硬化した例である。この場
合は、第2図Bの工程で樹脂27を充填する際、
第3図の31で示す部分にのみ樹脂を滴下すれば
良い。このとき樹脂は多少多くしておき、ガラス
蓋を押えた時接着面よりあふれる位が良い。 FIG. 3 shows a case of sealing according to the second embodiment, and is an example in which the ultraviolet curable resin 31 is applied and cured only on the solid-state image sensor and the sealing portion. In this case, when filling the resin 27 in the step of FIG. 2B,
It is sufficient to drop the resin only on the portion indicated by 31 in FIG. At this time, add a little more resin so that when you press the glass lid, it overflows from the adhesive surface.
この場合、第2図Bに示す樹脂塗布工程が異な
つている他は全て同様の製造工程で製作される。 In this case, everything is manufactured using the same manufacturing process except for the resin coating process shown in FIG. 2B.
本発明の製造法によれば、温度を上げないため
半導体デバイスの特性変動が全くない。さらに、
本発明の製造法を光検出素子を含む半導体デバイ
スや、光学フイルターを接着した固体撮像素子の
パツケージングに用いた場合、蓋を兼ねたガラス
板とデバイスとの間が紫外線硬化型樹脂で埋めら
れるため、その場合は表面反射が防止でき透過光
の損失がなくなる。特に紫外線硬化型樹脂として
その屈折率がガラスに近いものを選択すれば効果
は非常に大きい。 According to the manufacturing method of the present invention, since the temperature is not increased, there is no change in the characteristics of the semiconductor device. moreover,
When the manufacturing method of the present invention is used for packaging a semiconductor device including a photodetector or a solid-state image sensor to which an optical filter is bonded, the space between the device and the glass plate that also serves as a lid is filled with ultraviolet curable resin. Therefore, in that case, surface reflection can be prevented and loss of transmitted light can be eliminated. In particular, if a UV-curable resin whose refractive index is close to that of glass is selected, the effect will be very large.
第1図A,Bは従来の封止法を説明するための
図、第2図A,B,Cは本発明の一実施例を説明
するための図、第3図は本発明の他の実施例を説
明するための図である。
21……収納容器、22……固体撮像素子、2
3……デバイス接着材、24……フイルター、2
5……接着剤、26……金属細線、27……紫外
線硬化型樹脂、28……ガラス蓋、29……紫外
線。
Figures 1A and B are diagrams for explaining the conventional sealing method, Figures 2A, B, and C are diagrams for explaining one embodiment of the present invention, and Figure 3 is a diagram for explaining another embodiment of the present invention. It is a figure for explaining an example. 21... Storage container, 22... Solid-state imaging device, 2
3...Device adhesive material, 24...Filter, 2
5... Adhesive, 26... Fine metal wire, 27... Ultraviolet curing resin, 28... Glass lid, 29... Ultraviolet light.
Claims (1)
デバイス上の電極と外部リードとを電気的に接続
した後、少なくとも前記デバイスと該収納容器の
蓋を兼ねたガラス板との間に紫外線硬化型樹脂を
介在させ、前記ガラス板を通して紫外線を照射す
ることにより前記樹脂を硬化させることを特徴と
する半導体装置の製造方法。 2 半導体デバイスが表面に光学フイルターを接
着した固体撮像素子であることを特徴とする特許
請求の範囲第1項に記載の半導体装置の製造方
法。[Scope of Claims] 1. After adhering and fixing a semiconductor device to a storage container and electrically connecting the electrodes on the device and external leads, at least the device is connected to a glass plate that also serves as a lid of the storage container. A method of manufacturing a semiconductor device, characterized in that an ultraviolet curable resin is interposed between the glass plates, and the resin is cured by irradiating ultraviolet rays through the glass plate. 2. The method of manufacturing a semiconductor device according to claim 1, wherein the semiconductor device is a solid-state image sensor having an optical filter bonded to the surface thereof.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2025580A JPS56116649A (en) | 1980-02-19 | 1980-02-19 | Manufacturing of semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2025580A JPS56116649A (en) | 1980-02-19 | 1980-02-19 | Manufacturing of semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS56116649A JPS56116649A (en) | 1981-09-12 |
| JPS6122865B2 true JPS6122865B2 (en) | 1986-06-03 |
Family
ID=12022082
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2025580A Granted JPS56116649A (en) | 1980-02-19 | 1980-02-19 | Manufacturing of semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56116649A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009298112A (en) * | 2008-06-17 | 2009-12-24 | Nitto Denko Corp | Optical part making method |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5834681A (en) * | 1981-08-26 | 1983-03-01 | Hitachi Ltd | Solid-state image sensor |
| JPS5857871A (en) * | 1981-10-02 | 1983-04-06 | Hitachi Ltd | Solid-state image pickup device |
| JPS5869174A (en) * | 1981-10-21 | 1983-04-25 | Hitachi Ltd | Solid-state image pickup device |
| JPS5869962U (en) * | 1981-11-06 | 1983-05-12 | 松下電器産業株式会社 | Seam-sealed semiconductor device for solid-state imaging |
| JPS58170052A (en) * | 1982-03-31 | 1983-10-06 | Sony Corp | Manufacture of solid state image pickup device |
| JPS5918438U (en) * | 1982-07-27 | 1984-02-04 | シチズン時計株式会社 | IC sealing structure of electronic clock |
| JPH0728014B2 (en) * | 1986-05-21 | 1995-03-29 | 株式会社東芝 | Solid-state imaging device |
| JPS63168041A (en) * | 1987-01-05 | 1988-07-12 | Hitachi Maxell Ltd | Semiconductor device and manufacture thereof |
| JPS6457661A (en) * | 1987-08-27 | 1989-03-03 | Toshiba Corp | Solid-state image sensing device and manufacture thereof |
| JPH0821702B2 (en) * | 1987-09-03 | 1996-03-04 | 株式会社東芝 | Solid-state imaging device and manufacturing method thereof |
| US6531334B2 (en) * | 1997-07-10 | 2003-03-11 | Sony Corporation | Method for fabricating hollow package with a solid-state image device |
| JP4838501B2 (en) * | 2004-06-15 | 2011-12-14 | 富士通セミコンダクター株式会社 | Imaging apparatus and manufacturing method thereof |
-
1980
- 1980-02-19 JP JP2025580A patent/JPS56116649A/en active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009298112A (en) * | 2008-06-17 | 2009-12-24 | Nitto Denko Corp | Optical part making method |
| EP2144288A2 (en) | 2008-06-17 | 2010-01-13 | Nitto Denko Corporation | Process for Producing Optical Component |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS56116649A (en) | 1981-09-12 |
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