JPS623963B2 - - Google Patents
Info
- Publication number
- JPS623963B2 JPS623963B2 JP56021853A JP2185381A JPS623963B2 JP S623963 B2 JPS623963 B2 JP S623963B2 JP 56021853 A JP56021853 A JP 56021853A JP 2185381 A JP2185381 A JP 2185381A JP S623963 B2 JPS623963 B2 JP S623963B2
- Authority
- JP
- Japan
- Prior art keywords
- mol
- oxide
- voltage
- zinc
- vanadium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
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- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical group [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 22
- 229910052725 zinc Inorganic materials 0.000 claims description 14
- 239000011701 zinc Substances 0.000 claims description 14
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 13
- 239000011787 zinc oxide Substances 0.000 claims description 11
- 229910052845 zircon Inorganic materials 0.000 claims description 9
- GFQYVLUOOAAOGM-UHFFFAOYSA-N zirconium(iv) silicate Chemical compound [Zr+4].[O-][Si]([O-])([O-])[O-] GFQYVLUOOAAOGM-UHFFFAOYSA-N 0.000 claims description 9
- 239000000654 additive Substances 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 8
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 7
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 7
- 229910052718 tin Inorganic materials 0.000 claims description 7
- 239000010936 titanium Substances 0.000 claims description 7
- 229910052719 titanium Inorganic materials 0.000 claims description 7
- 229910052720 vanadium Inorganic materials 0.000 claims description 7
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims description 7
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 5
- 230000000996 additive effect Effects 0.000 claims description 4
- 239000007858 starting material Substances 0.000 claims description 4
- 229910006404 SnO 2 Inorganic materials 0.000 claims description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 2
- 229910004298 SiO 2 Inorganic materials 0.000 claims 1
- 229910010413 TiO 2 Inorganic materials 0.000 claims 1
- GEIAQOFPUVMAGM-UHFFFAOYSA-N ZrO Inorganic materials [Zr]=O GEIAQOFPUVMAGM-UHFFFAOYSA-N 0.000 claims 1
- 229910052757 nitrogen Inorganic materials 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- XHCLAFWTIXFWPH-UHFFFAOYSA-N [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] XHCLAFWTIXFWPH-UHFFFAOYSA-N 0.000 description 8
- 229910001935 vanadium oxide Inorganic materials 0.000 description 8
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 7
- 229910052814 silicon oxide Inorganic materials 0.000 description 7
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 7
- 229910001887 tin oxide Inorganic materials 0.000 description 7
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 229910001928 zirconium oxide Inorganic materials 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 230000000630 rising effect Effects 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- NAIUSXBTWBUGMG-UHFFFAOYSA-N [Bi+]=O.[O-2].[Zn+2] Chemical compound [Bi+]=O.[O-2].[Zn+2] NAIUSXBTWBUGMG-UHFFFAOYSA-N 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910015902 Bi 2 O 3 Inorganic materials 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- MCMNRKCIXSYSNV-UHFFFAOYSA-N ZrO2 Inorganic materials O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 1
- PJGYETVUTQUTEE-UHFFFAOYSA-N [O-2].[Zn+2].[V+5] Chemical compound [O-2].[Zn+2].[V+5] PJGYETVUTQUTEE-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 150000002222 fluorine compounds Chemical class 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910001512 metal fluoride Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 239000011135 tin Substances 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Landscapes
- Compositions Of Oxide Ceramics (AREA)
- Thermistors And Varistors (AREA)
Description
本発明は酸化亜鉛を主成分とする焼結体におい
て出発原料として酸化亜鉛成分のうちの一部を金
属亜鉛で置換し添加物として少なくともバナジウ
ムと4価の原子価をもつけい素、チタン、ジルコ
ン、錫のうちの少なくとも一種を含有する電圧非
直線抵抗素子の製造方法に関する。
近年IC、トランジスタ、サイリスタなどの半
導体素子および半導体回路とその応用の急速な発
展にともない、計測、制御通信機器および電力機
器における半導体素子および半導体回路の使用が
普及しこれら機器の小型化、高性能化が進展する
とともにマイクロモータの使用が急速に増大して
いる。しかし他方ではこのような進歩にともない
これらの機器やその部品の耐電圧、耐サージおよ
び耐ノイズ性能はマイクロモータの整流子が発生
する火花電圧に対して十分とはいえない。このた
めこれらの機器や部品を異常なサージやノイズか
ら保護すること、あるいは回路電圧を安定化する
ことがきわめて重要な課題になつてきている。こ
れらの課題のために低いバリスタ電圧で高い非直
線性を有し、かつ応答性の速い電圧非直線抵抗素
子の開発が要求されている。従来これらの目的の
ためにSiCバリスタやSiバリスタなどの電圧非直
線抵抗素子がある。バリスタの電流電圧特性は一
般につぎの関係
I=(V/C)〓
で表示される。ここでVはバリスタに印加されて
いる電圧であり、Iはバリスタを流れる電流であ
る。またCは与えられた電流を流したときの電圧
に対応する定数である。非直線係数α=1はオー
ムの法則にしたがう普通の抵抗体でありαが大き
いほど非直線性がすぐれているといえる。ここで
はバリスタ特性をCとαで表わすかわりに1mA
における立上り電圧V1mAとαで表わすことと
する。また火花電圧のような立上り電圧が速く波
長の短いスパイク電圧に対する応答速度はバリス
タ自体の静電容量により決まり静電容量の大きい
方が応答速度は速くなる。従来用いられている
SiCバリスタはたとえばV1mA=10〜20V程度の
低電圧領域でα=3〜4程度で満足できるもので
はなく、またSiCバリスタは非酸化性雰囲気中で
焼成する必要がある。他方SiバリスタはSiのP−
N接合の順方向の立上り電圧(1mAに対して約
0.6V)を利用したものであり、必要とするバリ
スタ電圧を得るためには複数枚のシリコンチツプ
を積み重ねる必要がありコスト高となる欠点があ
る。また最近開発された低電圧用酸化亜鉛−酸化
ビスマス系バリスタは非直線係数αが約20と高い
が応答速度が遅いため火花電圧を制御できない。
本発明は上記の欠点を解決せんとするもので酸
化亜鉛を主成分とする焼結体において出発原料と
して酸化亜鉛成分のうちの一部を金属亜鉛で置換
し添加物として少なくともバナジウムと4価の原
子価をもつけい素、チタン、ジルコン、錫のうち
の少なくとも一種を含有することにより非直線係
数が高く、かつ非常に大きな静電容量を有するた
め高速応答性を有し、しかも非直線性が焼結体自
体に起因しているため対称形の電圧−電流特性を
示し焼結体の厚みを変えることにより任意のバリ
スタ電圧値を得ることが可能であり空気中で焼成
可能なため製造がきわめて簡易な電圧非直線抵抗
素子の製造方法を提供せんとするものである。
以下本発明の詳細を一実施例にもとづき説明す
る。
実施例
酸化亜鉛に金属亜鉛を0.01〜20モル%、酸化バ
ナジウムを0.001〜1モル%の範囲で添加しかつ
4価の原子価をもつ金属の酸化物である酸化けい
素、酸化チタン、酸化ジルコン、酸化錫のうちの
少なくとも一種を0.01〜10モル%添加しこれを十
分に混合して15mmφ×1mmtの寸法の円板型に成
型し1000℃以上の空気中高温で焼成した。焼成し
た焼結体の両面に電極をつけ特性を測定したとこ
ろ第1表に示すような結果が得られた。
In the present invention, in a sintered body whose main component is zinc oxide, a part of the zinc oxide component is replaced with metal zinc as a starting material, and at least vanadium and tetravalent atomic elements are added as additives such as silicon, titanium, and zircon. , relates to a method of manufacturing a voltage nonlinear resistance element containing at least one of tin. In recent years, with the rapid development of semiconductor devices and circuits such as ICs, transistors, and thyristors, and their applications, the use of semiconductor devices and circuits in measurement, control communication equipment, and power equipment has become widespread, and these devices have become smaller and have higher performance. As technology advances, the use of micromotors is rapidly increasing. However, with such progress, the withstand voltage, surge, and noise resistance of these devices and their components are not sufficient to withstand the spark voltage generated by the commutator of a micromotor. For this reason, protecting these devices and components from abnormal surges and noise, or stabilizing circuit voltages, has become an extremely important issue. To solve these problems, there is a need to develop a voltage nonlinear resistance element that has high nonlinearity at low varistor voltage and has fast response. Conventionally, voltage nonlinear resistance elements such as SiC varistors and Si varistors have been used for these purposes. The current-voltage characteristics of a varistor are generally expressed by the following relationship: I=(V/C). Here, V is the voltage applied to the varistor and I is the current flowing through the varistor. Further, C is a constant corresponding to the voltage when a given current is passed. A nonlinear coefficient α=1 is a normal resistor that follows Ohm's law, and it can be said that the larger α is, the better the nonlinearity is. Here, instead of expressing the varistor characteristics as C and α, 1mA
Let it be expressed by the rising voltage V1mA and α. Further, the response speed to a spike voltage such as a spark voltage that has a fast rising voltage and a short wavelength is determined by the capacitance of the varistor itself, and the larger the capacitance, the faster the response speed. traditionally used
For example, SiC varistors are not satisfied with α=3 to 4 in a low voltage region of about V1mA=10 to 20V, and SiC varistors need to be fired in a non-oxidizing atmosphere. On the other hand, Si varistor is Si P-
Forward rising voltage of N junction (approx.
0.6V), and has the disadvantage of high cost because it requires stacking multiple silicon chips to obtain the required varistor voltage. Furthermore, a recently developed low-voltage zinc oxide-bismuth oxide varistor has a high nonlinear coefficient α of about 20, but the response speed is slow and the spark voltage cannot be controlled. The present invention aims to solve the above-mentioned drawbacks, and in a sintered body mainly composed of zinc oxide, a part of the zinc oxide component as a starting material is replaced with metal zinc, and at least vanadium and tetravalent zinc are added as additives. Because it contains at least one of atomically valent elements such as ions, titanium, zircon, and tin, it has a high nonlinear coefficient and a very large capacitance, so it has high-speed response and has low nonlinearity. Because it is caused by the sintered body itself, it exhibits symmetrical voltage-current characteristics, and by changing the thickness of the sintered body, it is possible to obtain any desired varistor voltage value, and it is extremely easy to manufacture because it can be fired in air. The present invention aims to provide a simple method for manufacturing a voltage nonlinear resistance element. The details of the present invention will be explained below based on one embodiment. Example Silicon oxide, titanium oxide, zirconium oxide, which are metal oxides with tetravalent valence, are prepared by adding metallic zinc in the range of 0.01 to 20 mol% and vanadium oxide in the range of 0.001 to 1 mol% to zinc oxide. 0.01 to 10 mol % of at least one of tin oxide was added, and the mixture was thoroughly mixed and formed into a disk shape with dimensions of 15 mmφ x 1 mmt, and fired at a high temperature of 1000° C. or higher in air. When electrodes were attached to both sides of the fired sintered body and its characteristics were measured, the results shown in Table 1 were obtained.
【表】
すなわち第1表は焼結体の厚みを固定して電極
の種類を変えた場合の特性を調べたものである
が、この第1表から明らかなように電極の種類と
無関係に素子の厚みによつて特性が変わる焼結体
自体が非直線性をもつ素子であることがわかる。
つぎに第1図に酸化バナジウム=0.05モル%と酸
化けい素=2モル%を一定にして金属亜鉛の添加
量を変えたときのV1mAに対応するα値の変化
を示す。また第2図に金属亜鉛=3モル%と酸化
錫=2モル%を一定にして酸化バナジウムの添加
量を変えたときのV1mAに対応するα値の変化
を示す。第1図から金属亜鉛0.01〜20モル%、酸
化バナジウム0.001〜1モル%の場合に非直線係
数α=8〜12の高い値の得られることがわかる。
金属亜鉛の添加量が0.01モル%未満または20モル
%を越える範囲では非直線係数αが低くなるばか
りでなく安定性も悪くなる。酸化バナジウムの添
加量が0.001モル%未満または1モル%を越える
範囲では非直線係数αが低くなる。
第2表に組成比の異なる焼結体のV1mAの値
と非直線係数を示す。[Table] In other words, Table 1 investigates the characteristics when the thickness of the sintered body is fixed and the type of electrode is changed. It can be seen that the sintered body itself is a nonlinear element whose characteristics change depending on the thickness of the sintered body.
Next, FIG. 1 shows the change in α value corresponding to V1mA when the amount of metal zinc added is changed while keeping vanadium oxide = 0.05 mol % and silicon oxide = 2 mol % constant. Furthermore, FIG. 2 shows the change in α value corresponding to V1mA when the amount of vanadium oxide added is changed while keeping metal zinc = 3 mol % and tin oxide = 2 mol % constant. It can be seen from FIG. 1 that a high nonlinear coefficient α of 8 to 12 can be obtained when metallic zinc is 0.01 to 20 mol % and vanadium oxide is 0.001 to 1 mol %.
If the amount of metallic zinc added is less than 0.01 mol% or more than 20 mol%, not only the nonlinear coefficient α becomes low but also the stability deteriorates. When the amount of vanadium oxide added is less than 0.001 mol% or more than 1 mol%, the nonlinear coefficient α becomes low. Table 2 shows the V1mA values and nonlinear coefficients of sintered bodies with different composition ratios.
【表】
この第2表から添加物とその添加量を適宜選択
することによつてV1mAが低く非直線係数α=
8〜12と高い値が得られることがわかる。第3図
に金属亜鉛=3モル%と酸化バナジウム=0.05モ
ル%を一定にして酸化けい素、酸化チタン、酸化
ジルコンおよび酸化錫のそれぞれの添加量を変え
たときのV1mAに対応するα値の変化を示す。
第3図において曲線Aは酸化けい素、曲線Bは酸
化チタン、曲線Cは酸化ジルコン、曲線Dは酸化
錫の添加量を変えたときの変化である。第3図か
ら酸化けい素、酸化チタン、酸化ジルコン、酸化
錫の添加量はそれぞれ0.01〜10モル%の場合に非
直線係数α=8〜12の高い値の得られることがわ
かる。これらの添加量が0.01モル%未満または10
モル%を越える範囲では非直線係数αが低くな
る。第4図に本発明の実施例(曲線1)による酸
化亜鉛−金属亜鉛−酸化バナジウム系バリスタ
(ZnO 94.95モル%−Zn 3モル−V2O5 0.05モル
%−SiO2 0.5モル%−TiO2 0.5モル%−ZrO2 0.5
モル%−SnO2 0.5モル%)と従来の参考例(曲
線2)による酸化亜鉛−酸化ビスマス系バリスタ
(ZnO 96.5モル%−Bi2O3 0.5モル%−Co2O3 1
モル%−MnO2 1モル%−NiO 1モル%)との
V1mAに対応する静電容量特性の比較を示す。
第3図から実施例(曲線1)は参考例(曲線2)
よりも静電容量が大きく高速応答性がすぐれてい
ることがわかる。
上記説明ではバナジウム、けい素、チタン、ジ
ルコン、錫を酸化バナジウム、酸化けい素、酸化
チタン、酸化ジルコン、酸化錫の形で例示したが
焼成後酸化物になるものであればよく必ずしも酸
化物に限らないことはいうまでもない。また添加
物としてバナジウムとけい素、チタン、ジルコ
ン、錫のうちの少なくとも一種のほかにバナジウ
ム、けい素、チタン、ジルコン、錫以外のビスマ
ス、コバルト、マンガン、鉄、ニツケル、銅、ク
ロム、アルミニウム、マグネシウム、アンチモ
ン、タンタル、ハフニウム、鉛などの金属酸化物
または弗化物などを一種類以上添加してもよい。
以上詳述したように本発明によれば酸化亜鉛を
主成分とし焼結体自体が電圧非直線性を有する電
圧非直線抵抗素子の製造方法において出発原料と
して酸化亜鉛成分のうちの一部を金属亜鉛で置換
し添加物として少なくともバナジウムを含み、か
つ他の添加物として4価の原子価をもつけい素、
チタン、ジルコン、錫のうちの少なくとも一種を
含むことによつて非直線係数が高く、かつ高速応
答性がよくしかも製造がきわめて簡易であり安定
した特性を有する電圧非直線抵抗素子の製造方法
を提供することができる。[Table] From this Table 2, by appropriately selecting the additive and its addition amount, V1mA can be lowered and the nonlinear coefficient α=
It can be seen that high values of 8 to 12 are obtained. Figure 3 shows the α value corresponding to V1mA when the amounts of silicon oxide, titanium oxide, zirconium oxide, and tin oxide are varied while keeping zinc metal = 3 mol% and vanadium oxide = 0.05 mol% constant. Show change.
In FIG. 3, curve A is silicon oxide, curve B is titanium oxide, curve C is zircon oxide, and curve D is changes when the amount of tin oxide added is changed. It can be seen from FIG. 3 that a high nonlinear coefficient α of 8 to 12 can be obtained when the amounts of silicon oxide, titanium oxide, zircon oxide, and tin oxide are each 0.01 to 10 mol %. These addition amounts are less than 0.01 mol% or 10
In a range exceeding mol %, the nonlinear coefficient α becomes low. FIG. 4 shows a zinc oxide-metallic zinc-vanadium oxide varistor (ZnO 94.95 mol%-Zn 3 mol% -V2O5 0.05 mol%-SiO2 0.5 mol% -TiO2 ) according to an example of the present invention (curve 1). 0.5 mol% - ZrO2 0.5
mol% - SnO 2 0.5 mol%) and zinc oxide-bismuth oxide varistor (ZnO 96.5 mol% - Bi 2 O 3 0.5 mol% - Co 2 O 3 1) according to the conventional reference example (curve 2)
mol% - MnO 2 1 mol% - NiO 1 mol%)
A comparison of capacitance characteristics corresponding to V1mA is shown.
From Figure 3, the example (curve 1) is the reference example (curve 2).
It can be seen that the capacitance is larger and the high-speed response is excellent. In the above explanation, vanadium, silicon, titanium, zircon, and tin are exemplified in the form of vanadium oxide, silicon oxide, titanium oxide, zirconium oxide, and tin oxide, but it is sufficient that they become oxides after firing. Needless to say, there is no limit. In addition to vanadium and at least one of silicon, titanium, zircon, and tin, additives include vanadium, silicon, titanium, zircon, bismuth other than tin, cobalt, manganese, iron, nickel, copper, chromium, aluminum, and magnesium. , one or more metal oxides or fluorides such as antimony, tantalum, hafnium, and lead may be added. As described in detail above, according to the present invention, a part of the zinc oxide component is used as a starting material in a method for manufacturing a voltage nonlinear resistance element whose main component is zinc oxide and whose sintered body itself has voltage nonlinearity. Ni substituted with zinc, containing at least vanadium as an additive, and having a tetravalent valence as another additive,
Provided is a method for manufacturing a voltage nonlinear resistance element that contains at least one of titanium, zircon, and tin, has a high nonlinear coefficient, has good high-speed response, is extremely simple to manufacture, and has stable characteristics. can do.
第1図は金属亜鉛の添加量を変えたときのV1
mAに対応するα値の変化を示す曲線図、第2図
は酸化バナジウムの添加量を変えたときのV1m
Aに対応するα値の変化を示す曲線図、第3図は
酸化けい素、酸化チタン、酸化ジルコンおよび酸
化錫のそれぞれの添加量を変えたときのV1mA
に対応するα直の変化を示す曲線図、第4図は本
発明の実施例と従来の参考例とのV1mAに対応
する静電容量特性の比較を示す曲線図である。
Figure 1 shows V1 when the amount of metallic zinc added is changed.
A curve diagram showing the change in α value corresponding to mA, Figure 2 shows V1m when the amount of vanadium oxide added is changed.
A curve diagram showing the change in α value corresponding to A. Figure 3 shows V1mA when the amounts of each of silicon oxide, titanium oxide, zirconium oxide, and tin oxide are changed.
FIG. 4 is a curve diagram showing a change in the α axis corresponding to the curve, and FIG. 4 is a curve diagram showing a comparison of the capacitance characteristics corresponding to V1mA between the embodiment of the present invention and the conventional reference example.
Claims (1)
線性を有する電圧非直線抵抗素子の製造方法にお
いて、出発原料として酸化亜鉛成分のうち0.01〜
20モル%を金属亜鉛で置換し添加物として少なく
ともバナジウムをV2O5に換算して0.001〜1モル
%含み、かつ他の添加物として4価の原子価をも
つけい素、チタン、ジルコン、錫のうちの少なく
とも一種をSiO2、TiO2、ZrO2、SnO2に換算して
0.01〜10モル%含むことを特徴とする電圧非直線
抵抗素子の製造方法。1. In a method for manufacturing a voltage nonlinear resistance element whose main component is zinc oxide and whose sintered body itself has voltage nonlinearity, 0.01 to 10% of the zinc oxide component is used as a starting material.
20 mol% is substituted with metal zinc, and contains at least 0.001 to 1 mol% of vanadium converted to V 2 O 5 as an additive, and also has a tetravalent valence as other additives, such as nitrogen, titanium, zircon, At least one type of tin is converted into SiO 2 , TiO 2 , ZrO 2 , and SnO 2
A method for manufacturing a voltage nonlinear resistance element, characterized in that it contains 0.01 to 10 mol%.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56021853A JPS57136303A (en) | 1981-02-16 | 1981-02-16 | Method of producing voltage non-linear resistance element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56021853A JPS57136303A (en) | 1981-02-16 | 1981-02-16 | Method of producing voltage non-linear resistance element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57136303A JPS57136303A (en) | 1982-08-23 |
| JPS623963B2 true JPS623963B2 (en) | 1987-01-28 |
Family
ID=12066661
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56021853A Granted JPS57136303A (en) | 1981-02-16 | 1981-02-16 | Method of producing voltage non-linear resistance element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57136303A (en) |
-
1981
- 1981-02-16 JP JP56021853A patent/JPS57136303A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS57136303A (en) | 1982-08-23 |
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