JPS623965B2 - - Google Patents
Info
- Publication number
- JPS623965B2 JPS623965B2 JP56028925A JP2892581A JPS623965B2 JP S623965 B2 JPS623965 B2 JP S623965B2 JP 56028925 A JP56028925 A JP 56028925A JP 2892581 A JP2892581 A JP 2892581A JP S623965 B2 JPS623965 B2 JP S623965B2
- Authority
- JP
- Japan
- Prior art keywords
- mol
- oxide
- voltage
- zinc
- manganese
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
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- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical group [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 18
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 14
- 239000011701 zinc Substances 0.000 claims description 13
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 12
- 229910052725 zinc Inorganic materials 0.000 claims description 12
- 239000011787 zinc oxide Substances 0.000 claims description 9
- 239000000654 additive Substances 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 8
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 7
- 229910017052 cobalt Inorganic materials 0.000 claims description 7
- 239000010941 cobalt Substances 0.000 claims description 7
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 7
- 229910052749 magnesium Inorganic materials 0.000 claims description 7
- 239000011777 magnesium Substances 0.000 claims description 7
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 claims description 7
- 229910052759 nickel Inorganic materials 0.000 claims description 7
- 229910052720 vanadium Inorganic materials 0.000 claims description 7
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims description 7
- 238000000034 method Methods 0.000 claims description 5
- 230000000996 additive effect Effects 0.000 claims description 3
- AMWRITDGCCNYAT-UHFFFAOYSA-L hydroxy(oxo)manganese;manganese Chemical compound [Mn].O[Mn]=O.O[Mn]=O AMWRITDGCCNYAT-UHFFFAOYSA-L 0.000 description 14
- XHCLAFWTIXFWPH-UHFFFAOYSA-N [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[V+5].[V+5] XHCLAFWTIXFWPH-UHFFFAOYSA-N 0.000 description 7
- 229910000428 cobalt oxide Inorganic materials 0.000 description 7
- IVMYJDGYRUAWML-UHFFFAOYSA-N cobalt(ii) oxide Chemical compound [Co]=O IVMYJDGYRUAWML-UHFFFAOYSA-N 0.000 description 7
- 229910001935 vanadium oxide Inorganic materials 0.000 description 7
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 6
- 239000000395 magnesium oxide Substances 0.000 description 6
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 6
- 229910000480 nickel oxide Inorganic materials 0.000 description 6
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 6
- 230000004044 response Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 230000000630 rising effect Effects 0.000 description 3
- 239000007858 starting material Substances 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- NAIUSXBTWBUGMG-UHFFFAOYSA-N [Bi+]=O.[O-2].[Zn+2] Chemical compound [Bi+]=O.[O-2].[Zn+2] NAIUSXBTWBUGMG-UHFFFAOYSA-N 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910015902 Bi 2 O 3 Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- PJGYETVUTQUTEE-UHFFFAOYSA-N [O-2].[Zn+2].[V+5] Chemical compound [O-2].[Zn+2].[V+5] PJGYETVUTQUTEE-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 239000011575 calcium Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 150000002222 fluorine compounds Chemical class 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 239000011133 lead Substances 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910001512 metal fluoride Inorganic materials 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 230000004043 responsiveness Effects 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 229910052845 zircon Inorganic materials 0.000 description 1
- GFQYVLUOOAAOGM-UHFFFAOYSA-N zirconium(iv) silicate Chemical compound [Zr+4].[O-][Si]([O-])([O-])[O-] GFQYVLUOOAAOGM-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Compositions Of Oxide Ceramics (AREA)
- Thermistors And Varistors (AREA)
Description
本発明は酸化亜鉛を主成分とする焼結体におい
て出発原料として酸化亜鉛成分のうちの一部を金
属亜鉛で置換し添加物として少なくともバナジウ
ムと2価の原子価をもつコバルト、マンガン、ニ
ツケル、マグネシウムのうちの少なくとも一種を
含有する電圧非直線抵抗素子の製造方法に関す
る。
近年IC、トランジスタ、サイリスタなどの半
導体素子および半導体回路とその応用の急速な発
展にともない、計測、制御通信機器および電力機
器における半導体素子および半導体回路の使用が
普及しこれら機器の小型化、高性能化が進展する
とともにマイクロモータの使用が急速に増大して
いる。しかし他方ではこのような進歩にともない
これらの機器やその部品の耐電圧、耐サージおよ
び耐ノイズ性能はマイクロモータの整流子が発生
する火花電圧に対して十分とはいえない。このた
めこれらの機器や部品を異常なサージやノイズか
ら保護すること、あるいは回路電圧を安定化する
ことがきわめて重要な課題になつてきている。こ
れらの課題のために低いバリスタ電圧で高い非直
線性を有し、かつ応答性の速い電圧非直線抵抗素
子の開発が要求されている。従来これらの目的の
ためにSiCバリスタやSiバリスタなどの電圧非直
線抵抗素子がある。バリスタの電流電圧特性は一
般につぎの関係
I=(V/C)〓
で表示される。ここでVはバリスタに印加されて
いる電圧であり、Iはバリスタを流れる電流であ
る。またCは与えられた電流を流したときの電圧
に対応する定数である。非直線係数α=1はオー
ムの法則にしたがう普通の抵抗体でありαが大き
いほど非直線性がすぐれているといえる。ここで
はバリスタ特性をCとαで表わすかわりに1mA
における立上り電圧V1mAとαで表わすことと
する。また火花電圧のような立上り電圧が速く波
長の短いスパイク電圧に対する応答速度はバリス
タ自体の静電容量により決まり静電容量の大きい
方が応答速度は速くなる。従来用いられている
SiCバリスタはたとえばV1mA=10〜20V程度の
低電圧領域でα=3〜4程度で満足できるもので
はなく、またSiCバリスタは非酸化性雰囲気中で
焼成する必要がある。他方SiバリスタはSiのP−
N接合の順方向の立上り電圧(1mAに対して約
0.6V)を利用したものであり、必要とするバリ
スタ電圧を得るためには複数枚のシリコンチツプ
を積み重ねる必要がありコスト高となる欠点があ
る。また最近開発された低電圧用酸化亜鉛−酸化
ビスマス系バリスタは非直線係数αが約20と高い
が応答速度が遅いため火花電圧を制御できない。
本発明は上記の欠点を解決せんとするもので酸
化亜鉛を主成分とする焼結体において出発原料と
して酸化亜鉛成分のうちの一部を金属亜鉛で置換
し添加物として少なくともバナジウムと2価の原
子価をもつコバルト、マンガン、ニツケル、マグ
ネシウムのうちの少なくとも一種を含有すること
により非直線係数が高く、かつ非常に大きな静電
容量を有するため高速応答性を有し、しかも非直
線性が焼結体自体に起因しているため対称形の電
圧−電流特性を示し焼結体の厚みを変えることに
より任意のバリスタ電圧値を得ることが可能であ
り空気中で焼成可能なため製造がきわめて簡易な
電圧非直線抵抗素子の製造方法を提供せんとする
ものである。
以下本発明の詳細を一実施例にもとづき説明す
る。すなわち本発明は酸化亜鉛に金属亜鉛を0.01
〜20モル%、酸化バナジウムを0.001〜1モル%
の範囲で添加し、かつ2価の原子価をもつ金属の
酸化物である酸化コバルト、酸化マンガン、酸化
ニツケル、酸化マグネシウムのうちの少なくとも
一種を0.01〜10モル%添加しこれを十分に混合し
て15mmφ×1mmtの寸法の円板型に成型し1000℃
以上の空気中高温で焼成した。焼成した焼結体の
両面に電極をつけ特性を測定したところ第1表に
示すような結果が得られた。
In the present invention, a part of the zinc oxide component is replaced with metal zinc as a starting material in a sintered body mainly composed of zinc oxide, and as additives at least vanadium and divalent cobalt, manganese, nickel, The present invention relates to a method of manufacturing a voltage nonlinear resistance element containing at least one type of magnesium. In recent years, with the rapid development of semiconductor devices and circuits such as ICs, transistors, and thyristors, and their applications, the use of semiconductor devices and circuits in measurement, control communication equipment, and power equipment has become widespread, and these devices have become smaller and have higher performance. As technology advances, the use of micromotors is rapidly increasing. However, with such progress, the withstand voltage, surge, and noise resistance of these devices and their components are not sufficient to withstand the spark voltage generated by the commutator of a micromotor. For this reason, protecting these devices and components from abnormal surges and noise, or stabilizing circuit voltages, has become an extremely important issue. To solve these problems, there is a need to develop a voltage nonlinear resistance element that has high nonlinearity at low varistor voltage and has fast response. Conventionally, voltage nonlinear resistance elements such as SiC varistors and Si varistors have been used for these purposes. The current-voltage characteristics of a varistor are generally expressed by the following relationship: I=(V/C). Here, V is the voltage applied to the varistor and I is the current flowing through the varistor. Further, C is a constant corresponding to the voltage when a given current is passed. A nonlinear coefficient α=1 is a normal resistor that follows Ohm's law, and it can be said that the larger α is, the better the nonlinearity is. Here, instead of expressing the varistor characteristics as C and α, 1mA
Let it be expressed by the rising voltage V1mA and α. Further, the response speed to a spike voltage such as a spark voltage that has a fast rising voltage and a short wavelength is determined by the capacitance of the varistor itself, and the larger the capacitance, the faster the response speed. traditionally used
For example, SiC varistors are not satisfied with α=3 to 4 in a low voltage region of about V1mA=10 to 20V, and SiC varistors need to be fired in a non-oxidizing atmosphere. On the other hand, Si varistor is Si P-
Forward rising voltage of N junction (approx.
0.6V), and has the disadvantage of high cost because it requires stacking multiple silicon chips to obtain the required varistor voltage. Furthermore, a recently developed low-voltage zinc oxide-bismuth oxide varistor has a high nonlinear coefficient α of about 20, but the response speed is slow and the spark voltage cannot be controlled. The present invention aims to solve the above-mentioned drawbacks, and in a sintered body mainly composed of zinc oxide, a part of the zinc oxide component as a starting material is replaced with metallic zinc, and at least vanadium and divalent zinc are added as additives. Containing at least one of cobalt, manganese, nickel, and magnesium, which has a valence, has a high nonlinear coefficient and has a very large capacitance, so it has high-speed response and has a high nonlinearity. Because it is caused by the sintered body itself, it exhibits symmetrical voltage-current characteristics, and by changing the thickness of the sintered body, it is possible to obtain any desired varistor voltage value, and it is extremely easy to manufacture because it can be fired in air. The present invention aims to provide a method for manufacturing a voltage nonlinear resistance element. The details of the present invention will be explained below based on one embodiment. In other words, the present invention adds 0.01% of metallic zinc to zinc oxide.
~20 mol%, vanadium oxide 0.001-1 mol%
and 0.01 to 10 mol% of at least one of cobalt oxide, manganese oxide, nickel oxide, and magnesium oxide, which are oxides of metals with divalent atoms, are added and mixed thoroughly. Formed into a disc shape with dimensions of 15mmφ x 1mmt and heated to 1000℃.
It was fired in air at a high temperature. When electrodes were attached to both sides of the fired sintered body and its characteristics were measured, the results shown in Table 1 were obtained.
【表】
すなわち第1表は焼結体の厚みを固定して電極
の種類を変えた場合の特性を調べたものである
が、この第1表から明らかなように電極の種類と
無関係に素子の厚みによつて特性が変わる焼結体
自体が非直線性をもつ素子であることがわかる。
つぎに第1図に酸化バナジウム=0.05モル%と酸
化コバルト=2モル%を一定にして金属亜鉛の添
加量を変えたときのV1mAに対応するα値の変
化を示す。また第2図に金属亜鉛=3モル%と酸
化マンガン=2モル%を一定にして酸化バナジウ
ムの添加量を変えたときのV1mAに対応するα
値の変化を示す。第1図から金属亜鉛0.01〜20モ
ル%、酸化バナジウム0.001〜1モル%の場合に
非直線係数α=10〜15の高い値の得られることが
わかる。金属亜鉛の添加量が0.01モル%未満また
は20モル%を越える範囲では非直線係数αが低く
なるばかりでなく安定性も悪くなる。酸化バナジ
ウムの添加量が0.001モル%未満または1モル%
を越える範囲では非直線係数αが低くなる。第2
表に組成比の異なる焼結体のV1mAの値と非直
線係数を示す。[Table] In other words, Table 1 investigates the characteristics when the thickness of the sintered body is fixed and the type of electrode is changed. It can be seen that the sintered body itself is a nonlinear element whose characteristics change depending on the thickness of the sintered body.
Next, FIG. 1 shows the change in α value corresponding to V1mA when the amount of metal zinc added is changed while keeping vanadium oxide = 0.05 mol % and cobalt oxide = 2 mol % constant. Figure 2 also shows α corresponding to V1mA when the amount of vanadium oxide added is changed while keeping metal zinc = 3 mol% and manganese oxide = 2 mol% constant.
Indicates a change in value. It can be seen from FIG. 1 that a high nonlinear coefficient α of 10 to 15 can be obtained when metallic zinc is 0.01 to 20 mol % and vanadium oxide is 0.001 to 1 mol %. If the amount of metallic zinc added is less than 0.01 mol% or more than 20 mol%, not only the nonlinear coefficient α becomes low but also the stability deteriorates. Added amount of vanadium oxide is less than 0.001 mol% or 1 mol%
In the range exceeding , the nonlinear coefficient α becomes low. Second
The table shows the V1mA values and nonlinear coefficients of sintered bodies with different composition ratios.
【表】
この第2表から添加物とその添加量を適宜選択
することによつてV1mAが低く非直線係数α=
10〜15と高い値が得られることがわかる。第3図
に金属亜鉛=3モル%と酸化バナジウム=0.05モ
ル%を一定にして酸化コバルト、酸化マンガン、
酸化ニツケルおよび酸化マグネシウムのそれぞれ
の添加量を変えたときのV1mAに対応するα値
の変化を示す。第3図において曲線Aは酸化コバ
ルト、曲線Bは酸化マンガン、曲線Cは酸化ニツ
ケル、曲線Dは酸化マグネシウムの添加量を変え
たときの変化である。第3図から酸化コバルト、
酸化マンガン、酸化ニツケル、酸化マグネシウム
の添加量はそれぞれ0.01〜10モル%の場合に非直
線係数α=10〜15の高い値の得られることがわか
る。これらの添加量が0.01モル%未満または10モ
ル%を越える範囲では非直線係数αが低くなる。
第4図に本発明の実施例(曲線1)による酸化亜
鉛−金属亜鉛−酸化バナジウム系バリスタ
(ZnO94.95モル%−Zn3モル%−V2O50.05モル%
−CoO0.5モル%−MnO0.5モル%−NiO0.5モル%
−MgO0.5モル%)と従来の参考例(曲線2)に
よる酸化亜鉛−酸化ビスマス系バリスタ
(ZnO96.5モル%−Bi2O30.5モル%−Co2O31モル
%−MnO21モル%−NiO1モル%)とのV1mAに
対応する静電容量特性の比較を示す。第3図から
実施例(曲線1)は参考例(曲線2)よりも静電
容量が大きく高速応答性がすぐれていることがわ
かる。
上記説明ではバナジウム、コバルト、マンガ
ン、ニツケル、マグネシウムを酸化バナジウム、
酸化コバルト、酸化マンガン、酸化ニツケル、酸
化マグネシウムの形で例示したが焼成後酸化物に
なるものであればよく必ずしも酸化物に限らない
ことはいうまでもない。また添加物としてバナジ
ウムとコバルト、マンガン、ニツケル、マグネシ
ウムのうちの少なくとも一種のほかにバナジウ
ム、コバルト、マンガン、ニツケル、マグネシウ
ム以外のビスマス、タングステン、モリブデン、
リチウム、鉄、銅、クロム、ストロンチウム、硼
素、カルシウム、アルミニウム、アンチモン、タ
ンタル、ハフニウム、鉛、けい素、チタン、ジル
コン、錫などの金属酸化物または弗化物などを一
種類以上添加してもよい。
以上詳述したように本発明によれば酸化亜鉛を
主成分とし焼結体自体が電圧非直線性を有する電
圧非直線抵抗素子の製造方法において出発原料と
して酸化亜鉛成分のうちの一部を金属亜鉛で置換
し添加物として少なくともバナジウムを含み、か
つ他の添加物として2価の原子価をもつコバル
ト、マンガン、ニツケル、マグネシウムのうちの
少なくとも一種を含むことによつて非直線係数が
高くかつ高速応答性がよくしかも製造がきわめて
簡易であり安定した特性を有する電圧非直線抵抗
素子の製造方法を提供することができる。[Table] From this Table 2, by appropriately selecting the additive and its addition amount, V1mA can be lowered and the nonlinear coefficient α=
It can be seen that high values of 10 to 15 are obtained. Figure 3 shows cobalt oxide, manganese oxide,
It shows the change in α value corresponding to V1mA when the amounts of nickel oxide and magnesium oxide added are changed. In FIG. 3, curve A shows changes in the amount of cobalt oxide, curve B shows manganese oxide, curve C shows nickel oxide, and curve D shows changes in the amount of magnesium oxide added. From Figure 3, cobalt oxide,
It can be seen that a high nonlinear coefficient α of 10 to 15 can be obtained when the amounts of manganese oxide, nickel oxide, and magnesium oxide are each 0.01 to 10 mol %. If the amount added is less than 0.01 mol% or more than 10 mol%, the nonlinear coefficient α becomes low.
FIG. 4 shows a zinc oxide-metallic zinc-vanadium oxide varistor (ZnO 94.95 mol% - Zn 3 mol% - V 2 O 5 0.05 mol%) according to the embodiment of the present invention (curve 1).
−CoO0.5 mol%−MnO0.5 mol%−NiO0.5 mol%
−MgO0.5 mol%) and the zinc oxide-bismuth oxide varistor according to the conventional reference example (curve 2) (ZnO96.5 mol%−Bi 2 O 3 0.5 mol%−Co 2 O 3 1 mol%−MnO 2 1 Comparison of capacitance characteristics corresponding to V1 mA with mol % - NiO 1 mol %) is shown. It can be seen from FIG. 3 that the example (curve 1) has a larger capacitance than the reference example (curve 2) and is superior in high-speed response. In the above explanation, vanadium, cobalt, manganese, nickel, and magnesium are replaced by vanadium oxide,
Cobalt oxide, manganese oxide, nickel oxide, and magnesium oxide are exemplified, but it goes without saying that the material is not necessarily limited to oxides as long as it becomes an oxide after firing. In addition to vanadium and at least one of cobalt, manganese, nickel, and magnesium as additives, bismuth, tungsten, molybdenum other than vanadium, cobalt, manganese, nickel, and magnesium,
One or more metal oxides or fluorides such as lithium, iron, copper, chromium, strontium, boron, calcium, aluminum, antimony, tantalum, hafnium, lead, silicon, titanium, zircon, and tin may be added. . As described in detail above, according to the present invention, a part of the zinc oxide component is used as a starting material in a method for manufacturing a voltage nonlinear resistance element whose main component is zinc oxide and whose sintered body itself has voltage nonlinearity. By substituting zinc and containing at least vanadium as an additive, and at least one of divalent cobalt, manganese, nickel, and magnesium as other additives, the nonlinear coefficient is high and the speed is high. It is possible to provide a method for manufacturing a voltage nonlinear resistance element that has good responsiveness, is extremely simple to manufacture, and has stable characteristics.
第1図は金属亜鉛の添加量を変えたときのV1
mAに対応するα値の変化を示す曲線図、第2図
は酸化バナジウムの添加量を変えたときのV1m
Aに対応するα値の変化を示す曲線図、第3図は
酸化コバルト、酸化マンガン、酸化ニツケルおよ
び酸化マグネシウムのそれぞれの添加量を変えた
ときのV1mAに対応するα値の変化を示す曲線
図、第4図は本発明の実施例と従来の参考例との
V1mAに対応する静電容量特性の比較を示す曲
線図である。
Figure 1 shows V1 when the amount of metallic zinc added is changed.
A curve diagram showing the change in α value corresponding to mA, Figure 2 shows V1m when the amount of vanadium oxide added is changed.
Figure 3 is a curve diagram showing changes in α value corresponding to A, and Figure 3 is a curve diagram showing changes in α value corresponding to V1mA when the amounts of each of cobalt oxide, manganese oxide, nickel oxide, and magnesium oxide are changed. , FIG. 4 shows the difference between the embodiment of the present invention and the conventional reference example.
FIG. 3 is a curve diagram showing a comparison of capacitance characteristics corresponding to V1mA.
Claims (1)
線性を有する電圧非直線抵抗素子の製造方法にお
いて、出願原料として酸化亜鉛成分のうち0.01〜
20モル%を金属亜鉛で置換し添加物として少なく
ともバナジウムをV2O5に換算して0.001〜1モル
%含み、かつ他の添加物として2価の原子価をも
つコバルト、マンガン、ニツケル、マグネシウム
のうちの少なくとも一種をCoO、MnO、NiO、
MgOに換算して0.01〜10モル%含むことを特徴
とする電圧非直線抵抗素子の製造方法。1. In a method for manufacturing a voltage nonlinear resistance element whose main component is zinc oxide and whose sintered body itself has voltage nonlinearity, 0.01~
Substituting 20 mol% with metallic zinc, containing at least 0.001 to 1 mol% of vanadium converted to V 2 O 5 as an additive, and divalent cobalt, manganese, nickel, and magnesium as other additives. At least one of CoO, MnO, NiO,
A method for manufacturing a voltage nonlinear resistance element, characterized in that it contains 0.01 to 10 mol% in terms of MgO.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56028925A JPS57143802A (en) | 1981-02-27 | 1981-02-27 | Method of producing voltage nonlinear resistance element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56028925A JPS57143802A (en) | 1981-02-27 | 1981-02-27 | Method of producing voltage nonlinear resistance element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57143802A JPS57143802A (en) | 1982-09-06 |
| JPS623965B2 true JPS623965B2 (en) | 1987-01-28 |
Family
ID=12261974
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56028925A Granted JPS57143802A (en) | 1981-02-27 | 1981-02-27 | Method of producing voltage nonlinear resistance element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57143802A (en) |
-
1981
- 1981-02-27 JP JP56028925A patent/JPS57143802A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS57143802A (en) | 1982-09-06 |
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