Deprecated: The each() function is deprecated. This message will be suppressed on further calls in /home/zhenxiangba/zhenxiangba.com/public_html/phproxy-improved-master/index.php on line 456
JPS6253190B2 - - Google Patents
[go: Go Back, main page]

JPS6253190B2 - - Google Patents

Info

Publication number
JPS6253190B2
JPS6253190B2 JP14935884A JP14935884A JPS6253190B2 JP S6253190 B2 JPS6253190 B2 JP S6253190B2 JP 14935884 A JP14935884 A JP 14935884A JP 14935884 A JP14935884 A JP 14935884A JP S6253190 B2 JPS6253190 B2 JP S6253190B2
Authority
JP
Japan
Prior art keywords
ultraviolet
treated
temperature
gas
lamp
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP14935884A
Other languages
Japanese (ja)
Other versions
JPS6129357A (en
Inventor
Shinji Sugioka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ushio Denki KK
Original Assignee
Ushio Denki KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ushio Denki KK filed Critical Ushio Denki KK
Priority to JP14935884A priority Critical patent/JPS6129357A/en
Publication of JPS6129357A publication Critical patent/JPS6129357A/en
Publication of JPS6253190B2 publication Critical patent/JPS6253190B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Apparatus For Disinfection Or Sterilisation (AREA)

Description

【発明の詳細な説明】 本発明は紫外線処理方法、例えばUV/O3クリ
ーニングに関するものである。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to ultraviolet treatment methods, such as UV/O 3 cleaning.

紫外線ランプなどの紫外線源より発生する紫外
線を利用して有機汚染物を分解洗浄などを処理を
することが行われているが、この紫外線源、例え
ば低圧水銀ランプを点灯すると、主として波長が
254nmの水銀共鳴線の紫外線が外部に放出さ
れ、従として波長が185nmの紫外線が、更には
他の波長のものがわずかに放出される。そして、
波長185nmの紫外線によつてオゾンが生成し、
次にこのオゾンが波長254nmにより分解されて
発生基の酸素が生成し、この発生基の酸素によつ
て有機汚染物が分解され、ガス状態で飛散するこ
とが知られている。また、N2Oは波長185nmによ
り分解されて発生基の酸素が生成し、オゾンと同
様に有機汚染物を分解し、ガス状態で飛散させ
る。
Ultraviolet light emitted from ultraviolet sources such as ultraviolet lamps is used to decompose and clean organic contaminants, but when this ultraviolet source, such as a low-pressure mercury lamp, is turned on, the main wavelength is
Ultraviolet rays with a mercury resonance line of 254 nm are emitted to the outside, followed by ultraviolet rays with a wavelength of 185 nm, and a small amount of other wavelengths are also emitted. and,
Ozone is produced by ultraviolet rays with a wavelength of 185 nm.
Next, this ozone is decomposed at a wavelength of 254 nm to generate oxygen as a generating group, and it is known that organic pollutants are decomposed by the oxygen as a generating group and scattered in a gaseous state. Furthermore, N 2 O is decomposed at a wavelength of 185 nm to generate oxygen, which decomposes organic pollutants in the same way as ozone and scatters them in a gaseous state.

ところで従来の方法は、紫外線ランプが上面に
配設された照射室内の下方に被処理体を配置し、
照射室内に酸素などの処理用ガスを含むガスを供
給しながら、被処理体に紫外線を照射していた。
そして、紫外線ランプと被処理体との距離が小さ
いと、被処理体表面の光の照射分布が不均一にな
り、有機汚染物の分解に局部的な偏りが生じるな
どの問題があるため、紫外線ランプと被処理体と
の距離はある程度大きくしなければならない。従
つて、照射室の容積が大きくなるが、このため、
照射室内の昇温は少なく、更には、ランプより発
生した紫外線は被処理体に到達するまでに酸素お
よび発生したオゾンに吸収されて減衰し、洗浄な
どの処理速度を遅くする原因となつていた。ま
た、処理速度を高く保持するためには、大きな容
積の照射室内に多量の酸素などの処理用ガスを供
給する必要があり、しかもこの多量に供給された
処理用ガスの極く一部が有機汚染物の分解に寄与
するのみであつて、大部分の処理用ガスは無駄に
照射室外に排気され、その効率は著しく悪かつ
た。
By the way, in the conventional method, the object to be treated is placed below an irradiation chamber with an ultraviolet lamp installed on the upper surface.
The object to be processed was irradiated with ultraviolet rays while a gas containing a processing gas such as oxygen was supplied into the irradiation chamber.
If the distance between the UV lamp and the object to be treated is small, the distribution of light irradiation on the surface of the object to be treated will be uneven, causing problems such as localized bias in the decomposition of organic contaminants. The distance between the lamp and the object to be processed must be increased to some extent. Therefore, the volume of the irradiation chamber increases;
The temperature rise in the irradiation chamber was small, and furthermore, the ultraviolet rays generated by the lamp were absorbed by oxygen and generated ozone and attenuated by the time they reached the object to be treated, slowing down the processing speed of cleaning and other processes. . In addition, in order to maintain a high processing speed, it is necessary to supply a large amount of processing gas such as oxygen into the large volume irradiation chamber, and a small portion of this large amount of processing gas supplied is organic. Most of the processing gas was wastefully exhausted outside the irradiation chamber, only contributing to the decomposition of the contaminants, and its efficiency was extremely poor.

そこで本発明は、これらの事情にかんがみてな
されたものであつて、洗浄などの処理速度が早
く、もつて紫外線強度や処理用ガスの供給量を少
なくすることが可能となる紫外線処理方法を提供
することを目的とする。そして、その構成は、紫
外線源の光によりオゾンもしくはN2Oを分解し、
これにより生成される発生基の酸素により被処理
体の表面に付着する有機汚染物などを分解して洗
浄などの処理を行うに際し、紫外線源と被処理体
との間を石英ガラスやエヤーカーテンなどで紫外
線が透過可能な状態で区画し、被処理体の近傍に
のみ処理用ガスを供給し、紫外線源を含む空間は
真空や紫外線を吸収しないガス雰囲気とし、か
つ、被処理体の温度を赤外線や抵抗加熱ヒーター
などにより適温に調整し、有機汚染物などの分解
を促進することを特徴とする。
Therefore, the present invention has been made in view of these circumstances, and provides an ultraviolet treatment method that has a high processing speed such as cleaning, and can reduce the intensity of ultraviolet rays and the amount of processing gas supplied. The purpose is to Its composition is to decompose ozone or N 2 O with light from an ultraviolet source,
The generated oxygen generated by this process decomposes organic contaminants adhering to the surface of the object to be treated, and when performing cleaning or other treatments, the space between the ultraviolet ray source and the object to be treated is removed using quartz glass, air curtains, etc. The process gas is supplied only to the vicinity of the object to be processed, the space containing the ultraviolet source is kept in a vacuum or a gas atmosphere that does not absorb ultraviolet rays, and the temperature of the object to be processed is controlled by the infrared rays. It is characterized by adjusting the temperature to an appropriate temperature using a resistance heater, etc., and promoting the decomposition of organic contaminants.

以下に図面に示す実施例に基いて本発明を具体
的に説明する。
The present invention will be specifically described below based on embodiments shown in the drawings.

第1図は本発明の実施例に使用される装置の断
面図を示すが、照射室1は図示略の装置箱に内蔵
されて二重構造をなし、発生したオゾンが外部に
漏洩しないようになつている。照射室1内の上方
には紫外線ランプ2としてU字状の200W低圧水
銀灯が2本配設され、その背部にはミラー3が配
置され、紫外線ランプ2の光は下方に向けて照射
される。そして、照射室1の天井上面には冷却水
路4が固着され、水冷されている。被処理体5は
直径約10cmのウエハーであつて、底面に固着され
た支持具6によつて支持されているが、紫外線ラ
ンプ2から被処理体5までの距離は10cmである。
そして、被処理体5の下方にはハロゲンランプ8
とミラー9からなる温度調節装置が設けられてい
るが、このハロゲンランプ8は最大消費電力が
150Wであつて、これから照射される赤外線によ
つて被処理体5の温度を常温から200℃近傍まで
の範囲で調整できるようになつている。
FIG. 1 shows a cross-sectional view of the apparatus used in the embodiment of the present invention. The irradiation chamber 1 is built into a device box (not shown) and has a double structure to prevent the generated ozone from leaking outside. It's summery. Two U-shaped 200W low-pressure mercury lamps are installed as ultraviolet lamps 2 in the upper part of the irradiation chamber 1, and a mirror 3 is placed behind the lamps, so that the light from the ultraviolet lamps 2 is directed downward. A cooling water channel 4 is fixed to the upper surface of the ceiling of the irradiation chamber 1 and is water-cooled. The object to be processed 5 is a wafer with a diameter of about 10 cm, and is supported by a support 6 fixed to the bottom surface, and the distance from the ultraviolet lamp 2 to the object to be processed 5 is 10 cm.
A halogen lamp 8 is provided below the object to be processed 5.
A temperature control device consisting of a mirror 9 and a mirror 9 is provided, but this halogen lamp 8 has a maximum power consumption.
The power is 150W, and the temperature of the object to be processed 5 can be adjusted in the range from room temperature to around 200°C by the infrared rays irradiated.

次に、被処理体5の上方2cmの位置には石英ガ
ラス板7が配設されており、被処理体5と紫外線
ランプ2とを区画しているが、被処理体5を含む
空間は紫外線ランプ2を含む空間よりずつと小さ
い。石英ガラス板7の下方には、酸素などの処理
用ガスを含むガスを供給する吸入孔11と、内部
のガスを分解された汚染物とともに排出する排気
孔12が設けられているが、排気孔12より吸引
されたガスはオゾン分解室で処理された後に大気
中に放出される。そして、石英ガラス板7の上方
であつて、紫外線ランプ2を含む空間には、減圧
装置に接続された減圧孔13と、窒素ガスのよう
に不活性であつて紫外線を吸収しないガスの注入
孔14が設けられている。もつとも、注入孔14
は設けずに、紫外線ランプ2を含む空間を真空に
することにより、紫外線がこの空間内で吸収され
ないようにしてもよい。
Next, a quartz glass plate 7 is placed 2 cm above the object 5 to separate the object 5 and the ultraviolet lamp 2, but the space containing the object 5 is exposed to ultraviolet light. It is slightly smaller than the space containing the lamp 2. Below the quartz glass plate 7, there are provided an inlet hole 11 for supplying a gas containing a processing gas such as oxygen, and an exhaust hole 12 for discharging the internal gas together with decomposed contaminants. The gas sucked through 12 is treated in an ozone decomposition chamber and then released into the atmosphere. In the space above the quartz glass plate 7 and containing the ultraviolet lamp 2, there is a pressure reduction hole 13 connected to a pressure reduction device and an injection hole for a gas that is inert and does not absorb ultraviolet rays, such as nitrogen gas. 14 are provided. However, the injection hole 14
Alternatively, the space containing the ultraviolet lamp 2 may be evacuated to prevent ultraviolet light from being absorbed in this space.

第2図は、他の実施例を示すが、温度調節装置
はハロゲンランプ8に代つて抵抗加熱ヒーター1
0が配設され、これの輻射熱によつてハロゲンラ
ンプ8の場合と同様に被処理体5の温度を調節で
きるようになつている。そして、石英ガラス板7
に代つてエヤーカーテンが配設されており、第1
図の石英ガラス板7に対応する位置に窒素ガスを
流出するノズル81とこれを吸引して受入れる吸
引孔82とが対向して設けられている。従つて、
被処理体5の少し上方には窒素ガスのエヤーカー
テンが張られ、紫外線はこれを透過するが、処理
用ガスはこれを超えて上方には拡散しないように
なつている。
FIG. 2 shows another embodiment in which the temperature control device is a resistance heating heater 1 instead of a halogen lamp 8.
0 is provided, and the temperature of the object to be processed 5 can be adjusted by its radiant heat in the same manner as in the case of the halogen lamp 8. And quartz glass plate 7
An air curtain is installed instead of the first
A nozzle 81 for discharging nitrogen gas and a suction hole 82 for sucking and receiving the nitrogen gas are provided at a position corresponding to the quartz glass plate 7 in the figure, facing each other. Therefore,
A nitrogen gas air curtain is placed slightly above the object to be processed 5, and ultraviolet rays are transmitted through this, but the processing gas is not diffused upward beyond this.

しかして、被処理体5の近傍に処理用ガスが供
給され、紫外線ランプ2を含む空間が減圧され、
もしくは更に窒素ガスが注入されるとともにハロ
ゲンランプ8もしくは抵抗加熱ヒーター10に通
電される。そして、紫外線ランプ2が点灯される
と紫外線は被処理体5の表面に照射され、表面に
付着していた有機汚染物は分解されて洗浄などの
処理がなされる。
Thus, the processing gas is supplied to the vicinity of the object to be processed 5, and the space containing the ultraviolet lamp 2 is depressurized.
Alternatively, nitrogen gas is further injected and the halogen lamp 8 or resistance heater 10 is energized. Then, when the ultraviolet lamp 2 is turned on, the surface of the object to be treated 5 is irradiated with ultraviolet rays, and organic contaminants adhering to the surface are decomposed and processing such as cleaning is performed.

ここで、被処理体5が温度調節装置により適温
に調節されているので、有機汚染物の分解は著し
く促進される。因みに、従来例の適温に調節しな
いときに、350W高出力低圧水銀灯を2本点灯し
て2分間で処理が完了するような汚染度のもの
を、本実施例で70℃に加熱すると、2本の200W
低圧水銀灯のうち1本のみ点灯し、同じ2分間で
処理が完了した。従つて、紫外線強度は、70℃に
加熱することによつて1/3以下とすることができ
る。次に、被処理体5の加熱温度を変化させて処
理時間への影響を調べた結果を第3図に示す。こ
こで被処理体5はガラス板であり、純水の接触角
により清浄度の判定を行ない、θ=10deg.をもつ
て処理の完了とした。これから明らかなように、
加熱温度を上げると処理時間は反比例して短かく
なり、120〜150℃に調節すれば20〜30秒で処理を
完了でき、紫外線強度や処理ガス供給量を少なく
することも可能であることが判明した。そして、
石英ガラス板やエヤーカーテンなどにより紫外線
源と被処理体とを紫外線透過可能に区画したの
で、これにより、紫外線の処理用ガスへの吸収を
少なくして処理速度を更に向上でき、また、処理
用ガスの供給量を著しく少なくできる効果があ
る。
Here, since the temperature of the object to be processed 5 is adjusted to an appropriate temperature by the temperature control device, the decomposition of the organic contaminants is significantly accelerated. By the way, if the contamination level is such that the treatment can be completed in 2 minutes by lighting two 350W high output low pressure mercury lamps when the temperature is not adjusted to the appropriate temperature as in the conventional example, if heated to 70℃ in this example, two 350W high output low pressure mercury lamps will be turned on. 200W
Only one of the low-pressure mercury lamps was turned on, and the treatment was completed in the same two minutes. Therefore, the intensity of ultraviolet rays can be reduced to 1/3 or less by heating to 70°C. Next, FIG. 3 shows the results of examining the effect on processing time by varying the heating temperature of the object to be processed 5. Here, the object to be treated 5 was a glass plate, and the cleanliness was determined based on the contact angle of pure water, and the treatment was completed when θ=10 degrees. As is clear from this,
Increasing the heating temperature will shorten the processing time inversely, and if the heating temperature is adjusted to 120 to 150°C, the processing can be completed in 20 to 30 seconds, and it is also possible to reduce the intensity of ultraviolet rays and the amount of processing gas supplied. found. and,
The ultraviolet light source and the object to be treated are separated using a quartz glass plate or an air curtain so that the ultraviolet rays can pass through, thereby reducing the absorption of ultraviolet rays into the processing gas and further improving the processing speed. This has the effect of significantly reducing the amount of gas supplied.

以上説明した実施例からも理解される様に、本
発明は、被処理体の温度を適温に調整し、かつ、
石英ガラス板やエヤーカーテンなどにより紫外線
源と被処理体とを紫外線透過可能に区画したの
で、有機汚染物などの分解を促進できるようにな
り、処理速度が早く、紫外線強度や処理用ガスの
供給量も少なくすることが可能な紫外線処理方法
とすることができる。なお、この方法は、洗浄の
他にフオトレジストのアツシング等にもそつくり
そのまゝ適用できる。
As can be understood from the embodiments described above, the present invention adjusts the temperature of the object to be processed to an appropriate temperature, and
Since the ultraviolet source and the object to be treated are separated using a quartz glass plate or air curtain so that ultraviolet light can pass through, it is possible to accelerate the decomposition of organic contaminants, etc., resulting in faster processing speed and improved ultraviolet intensity and processing gas supply. It is possible to provide an ultraviolet treatment method that can reduce the amount of ultraviolet rays. In addition to cleaning, this method can also be applied directly to ashes of photoresist, etc.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明実施例の断面図、第2図は同じ
く他の実施例の断面図、第3図は加熱温度と処理
時間の関係図である。 1……照射室、2……紫外線ランプ、3……ミ
ラー、5……被処理体、6……支持具、7……石
英ガラス板、8……ハロゲンランプ、10……抵
抗加熱ヒーター。
FIG. 1 is a sectional view of an embodiment of the present invention, FIG. 2 is a sectional view of another embodiment, and FIG. 3 is a diagram showing the relationship between heating temperature and processing time. DESCRIPTION OF SYMBOLS 1... Irradiation chamber, 2... Ultraviolet lamp, 3... Mirror, 5... Treated object, 6... Support tool, 7... Quartz glass plate, 8... Halogen lamp, 10... Resistance heating heater.

Claims (1)

【特許請求の範囲】 1 紫外線源の光によりオゾンもしくはN2O(亜
酸化窒素)を分解し、これにより生成される発生
基の酸素により被処理体の表面に付着する有機汚
染物などを分解して洗浄などの処理を行うに際
し、紫外線源と被処理体との間を石英ガラスやエ
ヤーカーテンなどで紫外線が透過可能な状態で区
画し、被処理体の近傍にのみ紫外線により発生基
の酸素を生成するガスを供給するとともに、紫外
線源を含む空間は、真空や紫外線を吸収しないガ
ス雰囲気とし、かつ、被処理体の温度を適温に調
整し、有機汚染物などの分解を促進することを特
徴とする紫外線処理方法。 2 赤外線の照射により被処理体の温度を調整す
ることを特徴とする特許請求の範囲第1項記載の
紫外線処理方法。 3 抵抗加熱ヒーターにより被処理体の温度を調
整することを特徴とする特許請求の範囲第1項記
載の紫外線処理方法。
[Claims] 1. Ozone or N 2 O (nitrous oxide) is decomposed by light from an ultraviolet source, and organic contaminants adhering to the surface of the object to be treated are decomposed by the generated radical oxygen. When carrying out processing such as cleaning, the space between the ultraviolet source and the object to be treated is separated using quartz glass or an air curtain in a manner that allows the ultraviolet rays to pass through. In addition to supplying the gas that generates the Characteristic ultraviolet ray treatment method. 2. The ultraviolet treatment method according to claim 1, wherein the temperature of the object to be treated is adjusted by irradiation with infrared rays. 3. The ultraviolet treatment method according to claim 1, wherein the temperature of the object to be treated is adjusted by a resistance heater.
JP14935884A 1984-07-20 1984-07-20 Treatment by ultraviolet rays Granted JPS6129357A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14935884A JPS6129357A (en) 1984-07-20 1984-07-20 Treatment by ultraviolet rays

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14935884A JPS6129357A (en) 1984-07-20 1984-07-20 Treatment by ultraviolet rays

Publications (2)

Publication Number Publication Date
JPS6129357A JPS6129357A (en) 1986-02-10
JPS6253190B2 true JPS6253190B2 (en) 1987-11-09

Family

ID=15473381

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14935884A Granted JPS6129357A (en) 1984-07-20 1984-07-20 Treatment by ultraviolet rays

Country Status (1)

Country Link
JP (1) JPS6129357A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11285566B2 (en) 2017-03-14 2022-03-29 Honda Motor Co., Ltd. Laser machining apparatus

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6501486B2 (en) * 2014-10-27 2019-04-17 学校法人東海大学 Sterilizer
JP2018102635A (en) * 2016-12-27 2018-07-05 株式会社トクヤマ Sterilization method and sterilization apparatus

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11285566B2 (en) 2017-03-14 2022-03-29 Honda Motor Co., Ltd. Laser machining apparatus

Also Published As

Publication number Publication date
JPS6129357A (en) 1986-02-10

Similar Documents

Publication Publication Date Title
JP3234091B2 (en) Surface treatment equipment
KR910007110B1 (en) Surface anealing device
JP2002502108A5 (en)
JP2001300451A (en) Ultraviolet light irradiation device
JPS6253190B2 (en)
JPS60212226A (en) UV treatment method
JP3214153B2 (en) Cleaning method using dielectric barrier discharge lamp
JPS6187338A (en) Method of dry cleaning silicon surface irradiated with multiple beams
JP2000066003A (en) How to clean optical components
JP2005512324A5 (en)
JP2588511B2 (en) Processing equipment
JPS58192330A (en) Oxidation treating method for surface of silicon wafer
JPH1110101A (en) Light cleaning device
JP3085128B2 (en) Light cleaning method
JPH06231735A (en) Ashing device formed by using dielectric barrier discharge lamp
JPH0611347U (en) Resist film ashing device
JPS607936A (en) Photochemical surface treatment device
JP3214154B2 (en) Cleaning method using dielectric barrier discharge lamp
JP3248320B2 (en) Resist removing method and resist removing apparatus
JPH0787899B2 (en) UV treatment device
JPH05198498A (en) Resist film ashing device
JPS61163633A (en) Method for surface treatment by discharge lamp
JPH06333814A (en) Ashing device
JP4291193B2 (en) Optical processing apparatus and processing apparatus
JPH0684843A (en) Surface treatment equipment

Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term