JPS6255296B2 - - Google Patents
Info
- Publication number
- JPS6255296B2 JPS6255296B2 JP57218689A JP21868982A JPS6255296B2 JP S6255296 B2 JPS6255296 B2 JP S6255296B2 JP 57218689 A JP57218689 A JP 57218689A JP 21868982 A JP21868982 A JP 21868982A JP S6255296 B2 JPS6255296 B2 JP S6255296B2
- Authority
- JP
- Japan
- Prior art keywords
- resin composition
- semiconductor device
- semiconductor element
- resin
- lead
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/852—Encapsulations
- H10H20/854—Encapsulations characterised by their material, e.g. epoxy or silicone resins
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/01—Manufacture or treatment
- H10W72/015—Manufacture or treatment of bond wires
- H10W72/01515—Forming coatings
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/071—Connecting or disconnecting
- H10W72/075—Connecting or disconnecting of bond wires
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/531—Shapes of wire connectors
- H10W72/536—Shapes of wire connectors the connected ends being ball-shaped
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/531—Shapes of wire connectors
- H10W72/5363—Shapes of wire connectors the connected ends being wedge-shaped
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/851—Dispositions of multiple connectors or interconnections
- H10W72/874—On different surfaces
- H10W72/884—Die-attach connectors and bond wires
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W74/00—Encapsulations, e.g. protective coatings
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
- H10W90/736—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked lead frame, conducting package substrate or heat sink
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
- H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink
Landscapes
- Epoxy Resins (AREA)
- Led Device Packages (AREA)
Description
【発明の詳細な説明】
本発明は樹脂封止型半導体装置の製造方法に関
するもので、特に樹脂封止型光電変換半導体装置
の製造方法に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for manufacturing a resin-sealed semiconductor device, and particularly to a method for manufacturing a resin-sealed photoelectric conversion semiconductor device.
従来、の半導体装置を第１図を用いて製造手順
に従つて説明する。銀めつきされた半導体装置組
立用金属リードフレーム（以下、リードフレーム
という）の半導体素子固着用リード１ａの先端の
定められた位置に合成樹脂系導電接着剤２を載置
し、その接着剤２の上に半導体素子３を貼り付け
る。100〜400℃に設定された加熱用オーブン又は
ホツトプレート上に保管して合成樹脂系導電性接
着剤２を熱硬化させ半導体素子３をリード１ａ先
端に固着する。 A conventional semiconductor device will be explained in accordance with the manufacturing procedure using FIG. A synthetic resin-based conductive adhesive 2 is placed at a predetermined position on the tip of the lead 1a for fixing a semiconductor element of a silver-plated metal lead frame for semiconductor device assembly (hereinafter referred to as lead frame), and the adhesive 2 A semiconductor element 3 is pasted on top of the . The synthetic resin conductive adhesive 2 is stored in a heating oven or on a hot plate set at 100 to 400 DEG C., and the synthetic resin conductive adhesive 2 is thermally cured to fix the semiconductor element 3 to the tip of the lead 1a.
さらに半導体素子３と外部取り出しリード１ｂ
とを150〜400℃加熱しながら金属細線４で接続
し、組立中間品とする。プラスチツク製の注型用
ケースに光透過性エポキシ樹脂組成物５（以下樹
脂組成物という。）を注型する。その樹脂組成物
５中に組立中間部品を治具に固定して組立中間品
の半導体素子が固着されたリード１ａ，１ｂを決
められた位置まで樹脂組成物５中に浸漬する。浸
漬したまま80―150℃の加熱用オーブンに１〜3hr
保管し、樹脂組成物５を熱硬化せしめる。その後
注型用ケースを取り除き、次いで後硬化仕上げ加
工し、半導体装置とする。この種の半導体装置に
用いるリードフレーム半導体素子を固着するリー
ド１ａの先端は半導体素子からの発光を効率よく
レンズ面に集めるため凹面鏡の如く成形されてお
りその凹部の底に半導体素子が固着されるように
なつている。 Furthermore, the semiconductor element 3 and the external lead 1b
are connected with a thin metal wire 4 while heating at 150 to 400°C to form an intermediate assembly product. A light-transmissive epoxy resin composition 5 (hereinafter referred to as resin composition) is cast into a plastic casting case. The intermediate assembly part is fixed to a jig in the resin composition 5, and the leads 1a and 1b to which the semiconductor element of the assembly intermediate part is fixed are immersed in the resin composition 5 to a predetermined position. Place in a heating oven at 80-150℃ for 1-3 hours while soaking.
It is stored and the resin composition 5 is thermally cured. Thereafter, the casting case is removed, followed by a post-hardening finish to form a semiconductor device. The tip of the lead 1a that fixes the lead frame semiconductor element used in this type of semiconductor device is shaped like a concave mirror in order to efficiently collect light emitted from the semiconductor element onto the lens surface, and the semiconductor element is fixed to the bottom of the concave part. It's becoming like that.
従来のこのような半導体装置には冷熱サイクル
が加わつたり、半導体装置の洗浄のための溶剤洗
浄リード仕上げメツキのためのアルカリ脱脂処
理、耐薬品性テストなどのストレスが与えられた
場合に、半導体素子近傍の樹脂部がクラツキング
するという問題があつた。光透過性エポキシ樹脂
組成物５はエポキシ樹脂と有機酸無水物を主成分
とし、硬化物はエステル結合を架橋点とするポリ
エステル樹脂の構造を有するものである。ために
種々の溶剤に晒された時、収縮応力が集中してい
るリード１ａ、リード１ｂ及び半導体素子近傍に
クラツキングが生じるのである。 Conventional semiconductor devices are exposed to stress such as thermal cycles, solvent cleaning for semiconductor device cleaning, alkaline degreasing for lead finish plating, and chemical resistance tests. There was a problem that the resin part near the element cracked. The light-transmitting epoxy resin composition 5 has an epoxy resin and an organic acid anhydride as main components, and the cured product has a polyester resin structure with ester bonds as crosslinking points. Therefore, when exposed to various solvents, cracking occurs near the leads 1a, 1b, and the semiconductor element where shrinkage stress is concentrated.
本発明はかかる問題点を構成材料を変更するこ
となしに、極めて容易な方法で解消しようとする
ものである。 The present invention attempts to solve such problems in an extremely easy way without changing the constituent materials.
本発明は組立中間品を樹脂組成物で注型硬化せ
しめるの先立つて、組立中間品の半導体素子近傍
を同一の樹脂組成物で塗布、熱硬化させる事を特
徴とする。 The present invention is characterized in that, prior to casting and curing the intermediate assembly product with a resin composition, the same resin composition is applied and thermally cured in the vicinity of the semiconductor element of the intermediate assembly product.
以下図面を用い、実施例を説明する。 Examples will be described below with reference to the drawings.
第２図ａは本発明の実施例の完成手前の断面
図、第２図ｂは実施例の完成品の断面図である。 FIG. 2a is a sectional view of the embodiment of the present invention before completion, and FIG. 2b is a sectional view of the completed product of the embodiment.
組立中間品までは従来と同様の方法で作製す
る。すなわち、銀めつきされたリードフレーム１
の半導体素子固着用リード１ａの先端の凹部の底
に合成樹脂系導電性接着剤２を載置し、その接着
剤２の上に半導体素子３を貼り付ける。次いで
100〜400℃設定された加熱用オーブンはホツトプ
レート上に保管して接着剤２を熱硬化させ半導体
素子３をリード１ａ先端に固着する。さらに半導
体素子３と外部取り出しリード１ｂとを150〜400
℃に加熱しながら金属細線４で接続し、組立中間
品とする。 Intermediate assembly products are manufactured in the same manner as before. That is, silver-plated lead frame 1
A synthetic resin conductive adhesive 2 is placed on the bottom of the recess at the tip of the semiconductor element fixing lead 1a, and the semiconductor element 3 is pasted onto the adhesive 2. then
A heating oven set at 100 to 400 DEG C. is stored on a hot plate to heat cure the adhesive 2 and fix the semiconductor element 3 to the tip of the lead 1a. Furthermore, the semiconductor element 3 and the external lead 1b are 150 to 400
While heating to ℃, they are connected with thin metal wires 4 to form an intermediate assembly product.
一方で、ビスフエノールＡ型エポキシ樹脂と脂
環式エポキシ樹脂のいずれか一方又は両方よりな
る樹脂部と無水フタル酸誘導体よりなる硬化剤部
とイミダゾール類、三級アミン類から選ばれる硬
化促進剤を主成物とし、着色剤、散乱剤を添加し
た光透過性エポキシ樹脂組成物５を作製する。組
立中間部品のリード１ａ，１ｂの先端部（半導体
素子３が固着されている部分周辺）のみを樹脂組
成物５に浸漬し、塗布する。その組立中間品のリ
ード1a，1b先端部を下向きに具に固定し、80〜
150℃の加熱用オーブンに１〜３時間保管して塗
布された樹脂組成物５を熱硬化させる。そしてオ
ーブンから取り出す。第２図ａはここまで工程を
進めた時の断面図である。プラスチツク製注型用
ケースに前述の樹脂組成物５を注型する。その樹
脂組成物５中に予じめリード１ａ，１ｂの先端部
を熱硬化させた組立中間品を治具に固定してリー
ド１ａ，１ｂの先端部及び下部を浸漬する。その
まま80〜150℃の加熱用オーブンに１〜３時間保
管し、注型された樹脂組成物５を熱硬化させる。
冷却後注型用ケースを取り除いて、ポストキユ
ア、仕上げ加工し、半導体装置とする。 On the other hand, a resin part made of either or both of a bisphenol A type epoxy resin and an alicyclic epoxy resin, a curing agent part made of a phthalic anhydride derivative, and a curing accelerator selected from imidazoles and tertiary amines. A light-transmissive epoxy resin composition 5 containing a colorant and a scattering agent as the main ingredients is prepared. Only the tips of the leads 1a and 1b (around the part to which the semiconductor element 3 is fixed) of the intermediate assembly parts are dipped in the resin composition 5 and applied. Fix the tips of the leads 1a and 1b of the half-assembled product downward to the tool, and
The coated resin composition 5 is thermally cured by storing it in a heating oven at 150° C. for 1 to 3 hours. Then remove from the oven. FIG. 2a is a cross-sectional view when the process has proceeded to this point. The resin composition 5 described above is cast into a plastic casting case. An intermediate assembly product in which the tips of the leads 1a and 1b have been heat-hardened in advance is fixed to a jig, and the tips and lower portions of the leads 1a and 1b are immersed in the resin composition 5. The cast resin composition 5 is then stored as it is in a heating oven at 80 to 150° C. for 1 to 3 hours to heat cure it.
After cooling, the casting case is removed, post-curing and finishing processing is performed to form a semiconductor device.
以上のような工程で製造された樹脂封止型半導
体装置はリード１ａ、凹部に対し樹脂組成物５の
熱硬化による収縮応力が集中せず、リード１ａ凹
部に塗布された樹脂組成物６全体に分散されてい
る。リード１ｂ先端部にも樹脂組成物５が塗布さ
れているのでリード１ｂの先端部に対する収縮応
力も分散されている。従がつて本発明による樹脂
型半導体装置は樹脂組成物の熱硬化工程で半導体
素子３、リード１ａ，１ｂが受ける反応収縮、熱
収縮による収縮応力が半導体素子３、リード１
ａ，１ｂのコーナー部、エツヂ部に集中していな
い。 In the resin-sealed semiconductor device manufactured by the above process, shrinkage stress due to thermal curing of the resin composition 5 is not concentrated on the leads 1a and the recesses, and the entire resin composition 6 applied to the recesses of the leads 1a is Distributed. Since the resin composition 5 is also applied to the tip of the lead 1b, the shrinkage stress on the tip of the lead 1b is also dispersed. Therefore, in the resin-type semiconductor device according to the present invention, the shrinkage stress caused by the reaction shrinkage and thermal shrinkage that the semiconductor element 3 and the leads 1a and 1b undergo during the thermosetting process of the resin composition is
It is not concentrated in the corners and edges of a and 1b.
こうして製造された樹脂封止型半導体装置は溶
剤アルカリ、酸に浸漬されたとき応力集中部にク
ラツクが生じる現象いわゆるストレスコロージヨ
ンクラツキングに対して特に強固である。第３図
ａ，ｂは本発明の実施例の効果を確認した評価結
果を表わしたものである。 The resin-sealed semiconductor device thus manufactured is particularly strong against so-called stress corrosion cracking, a phenomenon in which cracks occur in stress concentrated areas when immersed in alkali or acid solvents. FIGS. 3a and 3b show evaluation results confirming the effects of the embodiment of the present invention.
評価は本発明の実施例と従来品を同時に10％苛
性ソーダ水溶液及び10％食塩水溶液に浸漬し、一
定時間放置後外観的変化（クラツク、膨潤）の発
生状態を確認した。縦軸はクラツクの発生率、横
軸はそれぞれ試験液への浸漬時間である。 For evaluation, the example of the present invention and the conventional product were simultaneously immersed in a 10% caustic soda aqueous solution and a 10% salt aqueous solution, and after being left for a certain period of time, appearance changes (cracks, swelling) were checked. The vertical axis is the crack occurrence rate, and the horizontal axis is the immersion time in the test solution.
従来の半導体装置は苛性ソーダでは10分後、食
塩水中では８時間後にクラツクが発生しているの
に対し、本発明の実施例はクラツクは発生せず、
わずかに膨潤しただけである。 In the conventional semiconductor device, cracks occurred after 10 minutes in caustic soda and after 8 hours in saline solution, but no cracks occurred in the embodiment of the present invention.
It was only slightly swollen.
以上のように本発明の半導体装置の製造方法は
耐薬品性の改善に多大の貢献をするもので本発明
による半導体装置の信頼度は数段の向上が認めら
れた。 As described above, the method for manufacturing a semiconductor device according to the present invention greatly contributes to improving chemical resistance, and the reliability of the semiconductor device according to the present invention has been improved by several steps.
第１図は従来の半導体装置の断面図、第２図
ａ，ｂは本発明の実施例の断面図、第３図ａ，ｂ
は本発明の効果を表わす特性図である。
１，１ａ，１ｂ……リード及びリードフレー
ム、２……接着剤、３……半導体素子、４……金
属細線、５……樹脂組成物。
FIG. 1 is a sectional view of a conventional semiconductor device, FIGS. 2a and b are sectional views of an embodiment of the present invention, and FIGS. 3a and b
is a characteristic diagram showing the effects of the present invention. 1, 1a, 1b...Lead and lead frame, 2...Adhesive, 3...Semiconductor element, 4...Thin metal wire, 5...Resin composition.
Claims (1)
エポキシ樹脂にて封止される樹脂封止型半導体装
置の製造方法において素子及びその周囲を有機酸
無水物硬化エポキシ樹脂組成物で塗布、硬化せし
めた後に同一のエポキシ樹脂組成物で注型ケース
を用いて外装封止することを特徴とする樹脂封止
型半導体装置の製造方法。1. In a method for manufacturing a resin-sealed semiconductor device sealed with a light-transmitting epoxy resin using an organic acid anhydride as a curing agent, the element and its surroundings are coated with an organic acid anhydride-cured epoxy resin composition and cured. 1. A method for manufacturing a resin-sealed semiconductor device, which comprises the step of externally sealing the same epoxy resin composition using a casting case.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57218689A JPS59108333A (en) | 1982-12-14 | 1982-12-14 | Resin sealed semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57218689A JPS59108333A (en) | 1982-12-14 | 1982-12-14 | Resin sealed semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59108333A JPS59108333A (en) | 1984-06-22 |
| JPS6255296B2 true JPS6255296B2 (en) | 1987-11-19 |
Family
ID=16723867
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57218689A Granted JPS59108333A (en) | 1982-12-14 | 1982-12-14 | Resin sealed semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59108333A (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0178036U (en) * | 1987-11-12 | 1989-05-25 | ||
| JP2001196642A (en) | 2000-01-11 | 2001-07-19 | Toyoda Gosei Co Ltd | Light emitting device |
| JP2005244259A (en) * | 2005-05-23 | 2005-09-08 | Nichia Chem Ind Ltd | Light emitting diode |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS522267B2 (en) * | 1973-03-28 | 1977-01-20 |
-
1982
- 1982-12-14 JP JP57218689A patent/JPS59108333A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59108333A (en) | 1984-06-22 |
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