JPS6258642B2 - - Google Patents
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- Publication number
- JPS6258642B2 JPS6258642B2 JP57122574A JP12257482A JPS6258642B2 JP S6258642 B2 JPS6258642 B2 JP S6258642B2 JP 57122574 A JP57122574 A JP 57122574A JP 12257482 A JP12257482 A JP 12257482A JP S6258642 B2 JPS6258642 B2 JP S6258642B2
- Authority
- JP
- Japan
- Prior art keywords
- temperature
- ceramic composition
- mol
- semiconductor ceramic
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
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- 239000004065 semiconductor Substances 0.000 claims description 22
- 239000000203 mixture Substances 0.000 claims description 18
- 239000000919 ceramic Substances 0.000 claims description 14
- 229910002113 barium titanate Inorganic materials 0.000 claims description 8
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052788 barium Inorganic materials 0.000 claims description 5
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 claims description 4
- 239000011572 manganese Substances 0.000 claims description 4
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 235000012239 silicon dioxide Nutrition 0.000 claims description 3
- 229910052681 coesite Inorganic materials 0.000 claims description 2
- 229910052593 corundum Inorganic materials 0.000 claims description 2
- 229910052906 cristobalite Inorganic materials 0.000 claims description 2
- 229910052682 stishovite Inorganic materials 0.000 claims description 2
- 229910052905 tridymite Inorganic materials 0.000 claims description 2
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 2
- 229910052748 manganese Inorganic materials 0.000 claims 2
- 229910052688 Gadolinium Inorganic materials 0.000 claims 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 claims 1
- 229910052779 Neodymium Inorganic materials 0.000 claims 1
- 229910052772 Samarium Inorganic materials 0.000 claims 1
- 229910052787 antimony Inorganic materials 0.000 claims 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims 1
- -1 distrodium Chemical compound 0.000 claims 1
- UIWYJDYFSGRHKR-UHFFFAOYSA-N gadolinium atom Chemical compound [Gd] UIWYJDYFSGRHKR-UHFFFAOYSA-N 0.000 claims 1
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 claims 1
- 229910052758 niobium Inorganic materials 0.000 claims 1
- 239000010955 niobium Substances 0.000 claims 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims 1
- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 claims 1
- 229910052715 tantalum Inorganic materials 0.000 claims 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims 1
- 229910052727 yttrium Inorganic materials 0.000 claims 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims 1
- 230000000694 effects Effects 0.000 description 9
- 239000011777 magnesium Substances 0.000 description 8
- 238000010438 heat treatment Methods 0.000 description 5
- AYJRCSIUFZENHW-UHFFFAOYSA-L barium carbonate Chemical compound [Ba+2].[O-]C([O-])=O AYJRCSIUFZENHW-UHFFFAOYSA-L 0.000 description 4
- 229910052573 porcelain Inorganic materials 0.000 description 4
- 229910052749 magnesium Inorganic materials 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- 229910010413 TiO 2 Inorganic materials 0.000 description 2
- NKZSPGSOXYXWQA-UHFFFAOYSA-N dioxido(oxo)titanium;lead(2+) Chemical group [Pb+2].[O-][Ti]([O-])=O NKZSPGSOXYXWQA-UHFFFAOYSA-N 0.000 description 2
- 230000020169 heat generation Effects 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 229910052745 lead Inorganic materials 0.000 description 2
- HTUMBQDCCIXGCV-UHFFFAOYSA-N lead oxide Chemical compound [O-2].[Pb+2] HTUMBQDCCIXGCV-UHFFFAOYSA-N 0.000 description 2
- ZLNQQNXFFQJAID-UHFFFAOYSA-L magnesium carbonate Chemical compound [Mg+2].[O-]C([O-])=O ZLNQQNXFFQJAID-UHFFFAOYSA-L 0.000 description 2
- 239000001095 magnesium carbonate Substances 0.000 description 2
- 229910000021 magnesium carbonate Inorganic materials 0.000 description 2
- 235000014380 magnesium carbonate Nutrition 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical group [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 229910002651 NO3 Inorganic materials 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910000464 lead oxide Inorganic materials 0.000 description 1
- MIVBAHRSNUNMPP-UHFFFAOYSA-N manganese(2+);dinitrate Chemical compound [Mn+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O MIVBAHRSNUNMPP-UHFFFAOYSA-N 0.000 description 1
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 238000010583 slow cooling Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Thermistors And Varistors (AREA)
- Compositions Of Oxide Ceramics (AREA)
Description
産業上の利用分野
本発明は半導体磁器組成物に係り、特に正特性
の温度抵抗係数を有する半導体磁器組成物におい
て突入電流を抑制できるようにキユリー点温度以
下の負特性を有する温度範囲で負の勾配を小さく
するようにしたものに関する。
従来技術及び発明が解決しようとする問題点
チタン酸バリウムに微量の半導体化用元素を加
えてこれを半導体化した半導体磁器組成物は正の
温度抵抗係数を持ちある点まで発熱すると電流が
小さく抑制できるので発熱体や過電流防止用素子
等に使用されている。
これを発熱体として使用する場合には発熱温度
を高くすることが求められるが、例えばチタン酸
バリウムに鉛を添加することによりチタン酸バリ
ウムのバリウムをチタン酸鉛に置換し、キユリー
点（Tc）を高温側に移動できることは公知であ
る。しかしこの場合、その高温側への移動量が大
きくなればそのNTC領域の負の勾配も大きくな
つてゆく傾向がある。そしてキユリー点が高くな
れば同じ常温抵抗でも突入電流が大きくなり、ま
た断続試験等の経時変化が大きくなる。またチタ
ン酸鉛の置換により正特性も急峻であり正特性が
持続できる温度範囲が狭い。そのために使用しに
くい欠点を有していた。
発明の目的
本発明の目的は、このような問題点を改善した
もので、突入電流の大きくなく、かつ断続試験等
の経時変化の小さい正の抵抗温度特性を有する半
導体磁器組成物を提供することである。本発明の
他の目的は発熱体として良好な正の抵抗温度特性
を有する半導体磁器組成物を提供することであ
る。
問題点を解決するための手段
この目的を遂行するため本発明の半導体磁器組
成物では、チタン酸バリウムにおけるバリウムの
１〜50モル％を鉛で、0.1〜1.0モル％をマグネシ
ユウムで同時に置換した組成物に半導体化用元素
を0.1〜3.0モル％添加したことを特徴とするもの
である。
実施例
本発明では出発材料として炭酸バリウム
BaCO3、二酸化チタンTiO2、酸化鉛PbO、炭酸
マグネシウムMgCO3、二酸化硅素SiO2、硝酸マ
ンガン溶液Mn（NO3）2、二酸化アルミナAl2O3、
酸化イツトリウムY2O3などいずれも高純度のも
のを最終組成が第１表になるように秤量し、ボー
ルミル中で約16時間湿式混合を行つたのち、該混
合物を水が除去されるまで脱水乾燥した後、1000
〜1200℃の温度まで250℃／時間の温度勾配で加
熱しそして約２時間仮焼した後、徐冷した。この
ようにして得られた仮焼物を再度ボールミルで湿
式微粉砕して脱水乾燥後、PVA水溶液を固形分
換算で約２重量％加えた。それから50メツシユの
飾通しを行ない造粒した後、2000Kg／cmの圧力で
直径16.5mm×厚さ3.5mmの円板上成形体を得、こ
れを250℃／時間の温度上昇速度で1200〜1350℃
まで加熱して１時間この温度に保持し、次いで
150℃／時間の割合で室温まで徐冷した。このよ
うにして直径14mm、厚さ3.0mmの磁器が得られ
た。このようにして得られた各試料の磁器の比抵
抗ρ20、キユリー点Tc、β、断続寿命試験抵抗
変化率を測定したところ第１表に示す如き特性が
得られた。
ここでβは温度20℃のときの抵抗値をR20、キ
ユリー点における最小抵抗値をRminとしたとき
次式
β（％）＝2.302×logＲ２０／Ｒｍｉｎ×100
で求められるものであり、このβは小さい方が突
入電流が小さく発熱用としては使い易いものであ
る。
また断続寿命試験抵抗変化率は、印加電圧
120Vを１分間オンし次の１分間オフにして、こ
れを1000サイクルくり返した後の抵抗の最初に対
す
INDUSTRIAL APPLICATION FIELD The present invention relates to a semiconductor ceramic composition, and in particular, in order to suppress inrush current in a semiconductor ceramic composition having a positive temperature resistance coefficient, the present invention relates to a semiconductor ceramic composition having a positive temperature resistance coefficient. This relates to something that reduces the slope. Prior art and problems to be solved by the invention A semiconductor ceramic composition made by adding a small amount of semiconductor elements to barium titanate to make it a semiconductor has a positive temperature resistance coefficient, and when it heats up to a certain point, the current is suppressed to a small value. Because of this, it is used in heating elements, overcurrent prevention elements, etc. When using this as a heating element, it is required to raise the heat generation temperature, but for example, by adding lead to barium titanate, the barium in barium titanate can be replaced with lead titanate, and the Curie point (Tc) can be increased. It is known that the temperature can be moved to the high temperature side. However, in this case, as the amount of movement toward the high temperature side increases, the negative slope of the NTC region also tends to increase. If the Kyrie point becomes higher, the inrush current becomes larger even with the same room temperature resistance, and changes over time during intermittent tests, etc., become larger. Further, due to the substitution of lead titanate, the positive characteristics also become steep, and the temperature range in which the positive characteristics can be maintained is narrow. Therefore, it had the disadvantage of being difficult to use. Purpose of the Invention The purpose of the present invention is to improve the above-mentioned problems, and to provide a semiconductor ceramic composition which does not have a large inrush current and has positive resistance temperature characteristics with little change over time in intermittent tests, etc. It is. Another object of the present invention is to provide a semiconductor ceramic composition having good positive resistance temperature characteristics as a heating element. Means for Solving the Problems In order to achieve this objective, the semiconductor ceramic composition of the present invention has a composition in which 1 to 50 mol% of barium in barium titanate is simultaneously replaced with lead and 0.1 to 1.0 mol% of barium is replaced with magnesium. It is characterized by adding 0.1 to 3.0 mol % of semiconductor elements to the product. Examples In the present invention, barium carbonate is used as a starting material.
BaCO3 , titanium dioxide TiO2 , lead oxide PbO, magnesium carbonate MgCO3 , silicon dioxide SiO2 , manganese nitrate solution Mn( NO3 ) 2 , alumina dioxide Al2O3 ,
Yttrium oxide, Y 2 O 3 , etc., all of high purity, were weighed so that the final composition was as shown in Table 1, wet mixed in a ball mill for about 16 hours, and then the mixture was dehydrated until the water was removed. After drying, 1000
It was heated to a temperature of ~1200°C with a temperature gradient of 250°C/hour and calcined for about 2 hours, followed by slow cooling. The calcined product thus obtained was wet-pulverized again using a ball mill, dehydrated and dried, and then about 2% by weight of a PVA aqueous solution was added in terms of solid content. Then, after 50 meshes were pierced and granulated, a disk-shaped compact with a diameter of 16.5 mm and a thickness of 3.5 mm was obtained under a pressure of 2000 Kg/cm, and this was heated to a temperature of 1200 to 1350 at a temperature increase rate of 250°C/hour. ℃
and hold at this temperature for 1 hour, then
It was slowly cooled to room temperature at a rate of 150°C/hour. In this way, porcelain with a diameter of 14 mm and a thickness of 3.0 mm was obtained. When the resistivity ρ 20 , the Curie point Tc, β, and the rate of change in resistance during an intermittent life test of the porcelain of each sample thus obtained were measured, the characteristics shown in Table 1 were obtained. Here, β is determined by the following formula β (%) = 2.302×logR 20 /Rmin×100, where R 20 is the resistance value at a temperature of 20°C, and Rmin is the minimum resistance value at the Curie point. The smaller β is, the smaller the inrush current is and the easier it is to use for heat generation. In addition, the resistance change rate in the intermittent life test is determined by the applied voltage
After 1000 cycles of 120V on for one minute and off for the next minute,
【表】【table】
【表】【table】
【表】【table】
【表】
る変化率を示し、これまた小さい方が経時変化の
少いことを示すものである。
本発明において数値限定の理由は次の通りであ
る
(1) Mg量
上限 1.0モル％を超えると、第１表の試料No.
９、No.47、No.81等により明らかなように
絶縁体化する。
下限 0.1モル％に満たないときは、第１表の
試料No.１、No.32〜40、No.82〜85等により
明らかなように、βや断続寿命試験抵抗
変化率が悪るかつたり、絶縁物になつた
り、いわゆる添加効果がなく特性の改善
効果がみられない。
(2) 半導体化用元素量
上限が3.0モル％を超えると常温比抵抗が著し
く高くなり実用性に欠ける。
下限が0.1モル％に達しないと添加効果がな
く、半導体化しない。
(3) SiO2量
上限が3.0wt％を超えると緻密な磁器が得られ
ず常温比抵抗も高くなる。
下限が0.1wt％に満たない場合には焼成温度幅
が狭く均一な磁器が得られない。
(4) Mn量
上限 0.03wt％を超えると常温比抵抗が高くな
り実用性に欠ける。
下限 0.002wt％に達しないときは経時変化の
特性改善効果がない。
(5) Pb量
上限 50モル％を超えるとMg量が固溶しにく
くなり、特性改善効果がない。（試料No.
39、40、54等）
下限 １モル％に達しないときはPTC特性の
始まる温度Tcが高温側に移らず特性の
向上もみられず、実用性に乏しい。
(6) Al2O3量
上限 1.0wt％を超えると常温比抵抗が高くな
り特性改善効果もみられない。
下限 0.1wt％に達しないときは特性改善効果
がみられない。
(7) TiO2量
上限 2.0wt％を超えるときは常温比抵抗が高
くなり実用性に欠ける。
下限 0.1wt％に満たない場合には特性改善効
果がみられない。
さらに添付図面により従来例と本発明の特性を
示す。Ａは従来例を示し、第１表試料No.83の特性
であり、Ｂは本発明の試料No.79のものであつて、
（Ba89.4Pb10.0Mg0.6）TiO3＋Y2O30.9mol％
＋SiO20.7＋Mn0.01＋TiO20.3＋Al2O30.5
の組成を有する。ここでBa、Pb、Mgの添字はモ
ル％を示し、他はwt％を示す。
これより明らかな如く、従来のものは、Rmin
が小さいために突入電流も大きく、また正特性を
示す温度範囲も狭いのが本発明により大幅に改善
されて使用し易い特性になつていることがわか
る。
なおBaTiO3に対してMgを添加することは、例
えば「チタン酸バリウム系半導体の実験的研究」
（佐分利）やD.J.BROWN、F.A.W.SLY and G.
ARTHUR「The Effect of Oxide Impurities
on the Electrical Resistivity of La−doped
BaTiO3、」International Research and
Development Co.Ltd Newcastle upon Tyne ６
等に記載されているが、これらはMgにより半導
体化剤の量が多量に必要となることが明示されて
おり、（Ba Pb Mg）TiO3に関するものではな
い。
またチタン酸バリウム半導体にMgとPbを含有
させることが本出願人から特許出願されているが
（特開昭55−46524号公報）、これはMgの量が本発
明とは全く異なり、しかも本発明のように突入電
流抑制というような効果を奏するものではない。
効 果
本発明により抵抗温度特性のキユリー点温度以
下の温度範囲（NTC領域）での負の勾配を小さ
くコントロールすることができる。そしてこれに
より突入電流を小さく抑えることができる。また
キユリー点温度以上のPTC領域での正の勾配に
関してはなだらかなものとなり正特性が持続する
温度範囲が拡がり、発熱体として使用条件も拡が
ることになる。このようにして経時変化も小さく
なり、かくして経時変化の小さい、高電力の発熱
体を提供することが可能になつた。[Table] This table shows the rate of change, and the smaller the rate, the less the change over time. The reason for the numerical limitation in the present invention is as follows (1) Mg content Upper limit: If it exceeds 1.0 mol%, sample No. in Table 1.
9, No. 47, No. 81, etc. make it an insulator. When the lower limit is less than 0.1 mol%, as is clear from samples No. 1, No. 32 to 40, No. 82 to 85, etc. in Table 1, β and the rate of change in resistance in the intermittent life test may deteriorate. , it becomes an insulator, and there is no so-called additive effect, so no improvement in properties is observed. (2) Amount of elements for semiconductor formation If the upper limit exceeds 3.0 mol %, the specific resistance at room temperature becomes extremely high and it lacks practicality. If the lower limit does not reach 0.1 mol %, there will be no addition effect and it will not become a semiconductor. (3) Amount of SiO 2 If the upper limit exceeds 3.0wt%, dense porcelain cannot be obtained and the specific resistance at room temperature becomes high. If the lower limit is less than 0.1 wt%, the firing temperature range will be narrow and uniform porcelain will not be obtained. (4) Mn content Upper limit: If it exceeds 0.03wt%, the specific resistance at room temperature will increase and it will be impractical. When the lower limit of 0.002wt% is not reached, there is no effect of improving characteristics over time. (5) Pb content If the upper limit exceeds 50 mol%, the Mg content becomes difficult to form a solid solution, and there is no property improvement effect. (Sample No.
39, 40, 54, etc.) If the lower limit is less than 1 mol%, the temperature Tc at which PTC characteristics begin will not shift to the high temperature side, and no improvement in characteristics will be observed, resulting in poor practicality. (6) Amount of Al 2 O 3 Upper limit: If it exceeds 1.0 wt%, the specific resistance at room temperature will increase and no property improvement effect will be observed. When the lower limit of 0.1wt% is not reached, no property improvement effect is observed. (7) TiO 2 amount Upper limit When it exceeds 2.0wt%, the specific resistance at room temperature becomes high and it is not practical. If the lower limit is less than 0.1wt%, no property improvement effect will be observed. Further, the characteristics of the conventional example and the present invention are shown in the accompanying drawings. A shows the conventional example and is the property of sample No. 83 in Table 1, and B is the property of sample No. 79 of the present invention, (Ba89.4Pb10.0Mg0.6)TiO 3 +Y 2 O 3 0.9 It has a composition of mol% +SiO 2 0.7 + Mn0.01 + TiO 2 0.3 + Al 2 O 3 0.5. Here, the subscripts of Ba, Pb, and Mg indicate mol%, and the others indicate wt%. As is clear from this, the conventional one has Rmin
It can be seen that the inrush current is large because of the small value, and the temperature range in which the positive characteristics are exhibited is narrow, but the present invention significantly improves the characteristics and makes them easy to use. Note that the addition of Mg to BaTiO 3 is based on, for example, "experimental research on barium titanate-based semiconductors".
(Saburi), DJBROWN, FAWSLY and G.
ARTHUR “The Effect of Oxide Impurities”
on the Electrical Resistivity of La−doped
BaTiO3 ,” International Research and
Development Co.Ltd Newcastle upon Tyne 6
etc., but these clearly state that a large amount of the semiconducting agent is required due to Mg, and do not relate to (BaPbMg)TiO 3 . Furthermore, the present applicant has filed a patent application for containing Mg and Pb in a barium titanate semiconductor (Japanese Patent Application Laid-Open No. 55-46524), but the amount of Mg in this is completely different from that of the present invention. Unlike the invention, it does not have the effect of suppressing inrush current. Effects According to the present invention, the negative slope of the resistance temperature characteristic in the temperature range below the Curie point temperature (NTC region) can be controlled to be small. This allows the inrush current to be suppressed to a small level. In addition, the positive slope in the PTC region above the Curie point temperature becomes gentle, expanding the temperature range in which positive characteristics persist, and expanding the conditions for use as a heating element. In this way, the change over time is also reduced, making it possible to provide a high-power heating element with little change over time.
添付図面は従来の半導体磁器組成物と本発明の
半導体磁器組成物の一実施例の特性曲線を示す。
The accompanying drawings show characteristic curves of a conventional semiconductor ceramic composition and an embodiment of the semiconductor ceramic composition of the present invention.
Claims (1)
モル％を鉛で、0.1〜1.0モル％をマグネシウムで
同時に置換した組成物に半導体化用元素を0.1〜
3.0モル％添加したことを特徴とする半導体磁器
組成物。 ２ 前記半導体化用元素としてイツトリウム、ア
ンチモン、ニオブ、タンタル、デイストロジウ
ム、ガドリニウム、ネオジウム、サマリウムの少
くとも１つを使用したことを特徴とする特許請求
の範囲第１項記載の半導体磁器組成物。 ３ SiO2を0.1〜3.0wt％更に添加したことを特徴
とする特許請求の範囲第１項記載の半導体磁器組
成物。 ４ マンガンを0.002〜0.03wt％更に添加してな
ることを特徴とする特許請求の範囲第１項記載の
半導体磁器組成物。 ５ SiO2を0.1〜3.0wt％、Mnを0.002〜0.03wt
％、Al2O3を0.1〜1.0wt％、TiO2を0.1〜2.0wt％
更に添加してなることを特徴とする特許請求の範
囲第１項記載の半導体磁器組成物。[Claims] 1 1 to 50 of barium in barium titanate
0.1 to 0.1 to 1.0 to 1.0 to 1.0 to 1.0 to 1.0 to 1.0 to 1.0 to 1.0 to 1.0 to 1.0 to 1.0 to 1.0 to 1.0 to 1.0 to 1.0 to 1.0 to 0.1 to 1.0 to 1.0 to 1.0 to 1.0 to 1.0 to 1.0 to 1.0 from from 0.1 to 1.0 to 1.0 from 0.1 to 1.0 from 0.1 to 1.0 mol.
A semiconductor ceramic composition characterized in that 3.0 mol% is added. 2. The semiconductor ceramic composition according to claim 1, wherein at least one of yttrium, antimony, niobium, tantalum, distrodium, gadolinium, neodymium, and samarium is used as the semiconductor element. . 3. The semiconductor ceramic composition according to claim 1, further comprising 0.1 to 3.0 wt% of SiO2 . 4. The semiconductor ceramic composition according to claim 1, further comprising 0.002 to 0.03 wt% of manganese. 5 SiO 2 0.1-3.0wt%, Mn 0.002-0.03wt
%, Al2O3 0.1 ~1.0wt%, TiO2 0.1~2.0wt%
2. The semiconductor ceramic composition according to claim 1, further comprising:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57122574A JPS5913301A (en) | 1982-07-13 | 1982-07-13 | Semiconductor porcelain composition |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57122574A JPS5913301A (en) | 1982-07-13 | 1982-07-13 | Semiconductor porcelain composition |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5913301A JPS5913301A (en) | 1984-01-24 |
| JPS6258642B2 true JPS6258642B2 (en) | 1987-12-07 |
Family
ID=14839267
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57122574A Granted JPS5913301A (en) | 1982-07-13 | 1982-07-13 | Semiconductor porcelain composition |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5913301A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2008050875A1 (en) | 2006-10-27 | 2008-05-02 | Hitachi Metals, Ltd. | Semiconductor ceramic composition and method for producing the same |
-
1982
- 1982-07-13 JP JP57122574A patent/JPS5913301A/en active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2008050875A1 (en) | 2006-10-27 | 2008-05-02 | Hitachi Metals, Ltd. | Semiconductor ceramic composition and method for producing the same |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5913301A (en) | 1984-01-24 |
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