JPS6258670B2 - - Google Patents
Info
- Publication number
- JPS6258670B2 JPS6258670B2 JP57022484A JP2248482A JPS6258670B2 JP S6258670 B2 JPS6258670 B2 JP S6258670B2 JP 57022484 A JP57022484 A JP 57022484A JP 2248482 A JP2248482 A JP 2248482A JP S6258670 B2 JPS6258670 B2 JP S6258670B2
- Authority
- JP
- Japan
- Prior art keywords
- radiation
- detection
- detection window
- foil
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/29—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to radiation having very short wavelengths, e.g. X-rays, gamma-rays or corpuscular radiation
Landscapes
- Measurement Of Radiation (AREA)
- Light Receiving Elements (AREA)
Description
【発明の詳細な説明】
本発明は半導体放射線検出器に係り、特に検出
すべき放射線が入射する検出窓をチタン箔で構成
するようにした半導体放射線検出器に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a semiconductor radiation detector, and more particularly to a semiconductor radiation detector in which a detection window through which radiation to be detected enters is made of titanium foil.
半導体放射線検出器は半導体素子を使つてβ
線、α線等の放射線の線量、エネルギなどを測定
するものであつて、例えばゲルマニウム（Ge）
やシリコン（Si）などのウエハに不純物を拡散さ
せてPn接合を形成し、放射線に対して有感な空
乏層を生ぜしめるようにしたものである。放射線
がこの空乏層を通過するとき生ずる光電効果、コ
ンプトン効果、あるいは電子対生成のいずれかの
過程で２次電子が発生し、この２次電子がさらに
格子原子と作用して電子正孔対を生成し、これを
電流パルスとして検出してパルス数を計数するこ
とにより放射線量を計数することができる。 Semiconductor radiation detectors use semiconductor elements to
It measures the dose and energy of radiation such as rays and alpha rays, for example, germanium (Ge).
A Pn junction is formed by diffusing impurities into a wafer of silicon or silicon (Si), creating a depletion layer that is sensitive to radiation. When radiation passes through this depletion layer, secondary electrons are generated through the photoelectric effect, Compton effect, or electron pair generation, and these secondary electrons further interact with lattice atoms to create electron-hole pairs. The radiation dose can be counted by generating a current pulse, detecting this as a current pulse, and counting the number of pulses.
しかして、放射線を検出するための半導体素子
は機械的衝撃から電極を保護し、さらに雰囲気の
影響による経時変化を防ぐため、堅牢な保護ケー
ス内に収容する必要がある。そして、検出すべき
放射線は、保護ケースの検出窓を通してケース内
の半導体素子に入射されるようになつているの
で、検出窓を放射線が通過するときに生ずる放射
線の減衰はなるべく少ないことが望まれる。 Therefore, a semiconductor element for detecting radiation needs to be housed in a strong protective case in order to protect the electrodes from mechanical shock and to prevent changes over time due to the influence of the atmosphere. Since the radiation to be detected is made to enter the semiconductor element inside the case through the detection window of the protective case, it is desirable that the attenuation of the radiation that occurs when the radiation passes through the detection window is as small as possible. .
そのために、従来の半導体放射線検出器におい
ては、アルミニウム箔やベリリウム箔や雲母箔に
アルミニウムを蒸着したものが検出窓として使用
されている。 For this reason, in conventional semiconductor radiation detectors, aluminum foil, beryllium foil, or mica foil on which aluminum is vapor-deposited is used as a detection window.
ところが、アルミニウム箔は破損しやすいし、
ベリリウム箔は毒性がある点で問題であり、また
雲母箔にアルミニウムを蒸着したものは多量生産
が難しい等の欠点があつた。 However, aluminum foil is easily damaged,
Beryllium foil is problematic in that it is toxic, and mica foil with aluminum vapor-deposited has drawbacks such as difficulty in mass production.
そこで本発明の目的は検出すべき放射線のエネ
ルギの減衰を可及的に少なくして、かつ堅牢な検
出窓を備えた半導体放射線検出器を提供すること
にある。 SUMMARY OF THE INVENTION Accordingly, an object of the present invention is to provide a semiconductor radiation detector which minimizes attenuation of the energy of radiation to be detected and has a robust detection window.
上記目的を達成するため、本発明は、半導体放
射線検出素子をケース本体内に組み込み、このケ
ース本体に設けた検出窓を通して検出すべき放射
線を上記検出素子の検知部に入射するようにした
ものにおいて、上記検出窓をチタン（Ti）で構
成したことを特徴とするものである。 In order to achieve the above object, the present invention has a semiconductor radiation detection element built into a case body, and radiation to be detected enters the detection part of the detection element through a detection window provided in the case body. , the detection window is made of titanium (Ti).
以下本発明による半導体放射線検出器の一実施
例を図面を参照して説明する。 An embodiment of the semiconductor radiation detector according to the present invention will be described below with reference to the drawings.
第１図において、符号１はケース本体を示し、
このケース本体１は内部に検出室２を有し、検出
室２の底部は下部端板３によつて覆われている。
上記検出室２内には半導体放射線検出素子４が配
置され、この検出素子４は、スペーサ５を介して
上記下部端板３の上に設置されている。この半導
体放射線検出素子４は、例えばシリコンウエハの
一部に不純物を拡散させてPn接合を形成したも
のであり、逆バイアス電圧の印加により空乏層を
生ずるようになつている。 In FIG. 1, numeral 1 indicates the case body;
This case body 1 has a detection chamber 2 therein, and the bottom of the detection chamber 2 is covered by a lower end plate 3.
A semiconductor radiation detection element 4 is disposed within the detection chamber 2, and this detection element 4 is installed on the lower end plate 3 with a spacer 5 in between. This semiconductor radiation detection element 4 is made by, for example, diffusing impurities into a part of a silicon wafer to form a Pn junction, and is designed to form a depletion layer by applying a reverse bias voltage.
また、上記ケース本体１の上部端面には、上部
端板６が接合され、この上部端板６は検出すべき
放射線を導入するための開口７を有しており、こ
の開口７の上には検出窓８が接合されている。 Further, an upper end plate 6 is joined to the upper end surface of the case body 1, and this upper end plate 6 has an opening 7 for introducing radiation to be detected. A detection window 8 is joined.
本発明によれば、この検出窓８はチタン
（Ti）の箔によつて形成され、この箔の厚さは10
μｍ程度が望ましい。チタンは原子番号22で密度
が小さく、しかも機械的強度に優れ、展延性に富
むため薄膜を容易に得ることができる。 According to the invention, this detection window 8 is formed by a titanium (Ti) foil, and the thickness of this foil is 10
The thickness is preferably about μm. Titanium has an atomic number of 22, has a low density, has excellent mechanical strength, and is highly malleable, making it easy to form thin films.
また、第１図において、上記検出素子４の陽極
側端子はリード線９を介して上部端板６と接続さ
れる一方、上記検出素子４の陰極側端子はリード
線１０を介して下部端板３と接続されている。 In FIG. 1, the anode side terminal of the detection element 4 is connected to the upper end plate 6 via a lead wire 9, while the cathode side terminal of the detection element 4 is connected to the lower end plate 6 via a lead wire 10. 3 is connected.
このように、本発明は半導体放射線検出器の検
出窓をチタンの薄膜で構成したから、β線やγ線
や低エネルギＸ線等の放射線の検出窓を通過する
際の減衰率が低く、また機械的強度に優れている
から、堅牢な検出窓を備えた本体ケースを得るこ
とができる。 As described above, since the detection window of the semiconductor radiation detector of the present invention is constructed of a titanium thin film, the attenuation rate of radiation such as β-rays, γ-rays, and low-energy X-rays when passing through the detection window is low, and Since it has excellent mechanical strength, it is possible to obtain a main body case with a robust detection window.
第２図は検出窓を構成する材料について放射線
のエネルギと透過率との関係を示した線図であつ
て、使用した放射線源は 241Amで59.54Kev、
26.35Kev、20.8Kev、17.8Kev、13.9Kevのα線
およびＸ線ラインにおける計数比より透過率を求
めたものである。 Figure 2 is a diagram showing the relationship between radiation energy and transmittance for the materials constituting the detection window, and the radiation source used was 241 Am, 59.54 Kev,
The transmittance was determined from the count ratio in the α-ray and X-ray lines of 26.35Kev, 20.8Kev, 17.8Kev, and 13.9Kev.
第２図中曲線Ａ，Ｂ，Ｃは厚さ10μｍ、20μ
ｍ、50μｍのチタン箔を使用した場合を示し、曲
線Ｄは厚さ20μｍのAl箔、曲線Ｅは0.3mmの薄鉄
板を示したものである。この結果から明らかなよ
うに、厚さ10μｍのチタン箔は厚さ20μｍのAl
箔とほゞ同等の透過率を示すことがわかる。 Curves A, B, and C in Figure 2 have thicknesses of 10 μm and 20 μm.
The curve D shows the case where a titanium foil with a thickness of 50 μm is used, and the curve D shows an Al foil with a thickness of 20 μm, and the curve E shows a thin iron plate with a thickness of 0.3 mm. As is clear from this result, a 10 μm thick titanium foil is a 20 μm thick aluminum foil.
It can be seen that the transmittance is almost the same as that of foil.
以上の説明から明らかなように、本発明によれ
ば、放射線検出器の検出窓をチタンの薄膜で構成
したから、検出窓通過時の放射線の減衰率が低
く、低エネルギーのＸ線、γ線、β線領域まで検
出範囲を拡大することができ、機械的強度に優れ
ているから、堅牢な検出器のケースを得ることが
できる。 As is clear from the above description, according to the present invention, since the detection window of the radiation detector is constructed of a thin titanium film, the attenuation rate of radiation when passing through the detection window is low, and low-energy X-rays and γ-rays , the detection range can be expanded to the β-ray region, and it has excellent mechanical strength, making it possible to obtain a robust detector case.
第１図は本発明による半導体放射線検出器の一
実施例を示した縦断面図、第２図はγ線エネルギ
と放射線エネルギとの関係を示した線図である。
１…ケース本体、４…半導体放射線検出素子、
８…検出窓。
FIG. 1 is a longitudinal sectional view showing an embodiment of a semiconductor radiation detector according to the present invention, and FIG. 2 is a diagram showing the relationship between γ-ray energy and radiation energy. 1... Case body, 4... Semiconductor radiation detection element,
8...Detection window.
Claims (1)
込み、このケース本体に設けた検出窓を通して検
出すべき放射線を上記検出素子の検知部に入射す
るようにしたものにおいて、上記検出窓をチタン
（Ti）で構成したことを特徴とする半導体放射線
検出器。1 A semiconductor radiation detection element is built into a case body, and the radiation to be detected enters the detection part of the detection element through a detection window provided in the case body, and the detection window is made of titanium (Ti). A semiconductor radiation detector characterized by comprising:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57022484A JPS58139477A (en) | 1982-02-14 | 1982-02-14 | Semiconductor radiation detector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57022484A JPS58139477A (en) | 1982-02-14 | 1982-02-14 | Semiconductor radiation detector |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58139477A JPS58139477A (en) | 1983-08-18 |
| JPS6258670B2 true JPS6258670B2 (en) | 1987-12-07 |
Family
ID=12083993
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57022484A Granted JPS58139477A (en) | 1982-02-14 | 1982-02-14 | Semiconductor radiation detector |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58139477A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03121866U (en) * | 1990-03-26 | 1991-12-12 |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3818271B2 (en) * | 2003-04-25 | 2006-09-06 | 株式会社島津製作所 | Radiography equipment |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5134211U (en) * | 1974-09-06 | 1976-03-13 |
-
1982
- 1982-02-14 JP JP57022484A patent/JPS58139477A/en active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03121866U (en) * | 1990-03-26 | 1991-12-12 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58139477A (en) | 1983-08-18 |
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