JPS6311659B2 - - Google Patents
Info
- Publication number
- JPS6311659B2 JPS6311659B2 JP11192984A JP11192984A JPS6311659B2 JP S6311659 B2 JPS6311659 B2 JP S6311659B2 JP 11192984 A JP11192984 A JP 11192984A JP 11192984 A JP11192984 A JP 11192984A JP S6311659 B2 JPS6311659 B2 JP S6311659B2
- Authority
- JP
- Japan
- Prior art keywords
- ink
- mask pattern
- mask
- substrate
- laser light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Landscapes
- Preparing Plates And Mask In Photomechanical Process (AREA)
Description
【発明の詳細な説明】
この発明はたとえば電気回路パターン形成のた
めに用いられるフオトマスク基板上に施された遮
光性パターンの欠損等の欠陥を修正する方法に関
する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for correcting defects such as defects in a light-shielding pattern formed on a photomask substrate used for forming an electric circuit pattern, for example.
従来、フオトマスク基板上に銀エマルジヨン層
等の遮光パターンをフオトリソグラフイ技術等を
利用して形成したのちに、この得られた遮光パタ
ーンに欠損等の欠陥を発見した場合、その部分を
筆により墨で修正することがおこなわれている。 Conventionally, after forming a light-shielding pattern such as a silver emulsion layer on a photomask substrate using photolithography technology, if a defect such as a chip is found in the resulting light-shielding pattern, the defective part is painted with ink using a brush. A correction is being made.
しかし、この従来の筆による修正では熟練を要
求され、しかも熟練者の場合でも筆先の太さなど
からして欠損部の大きさが巾30μm程度が限度で
あり、それ以下の小さい欠損部の修正は不可能で
あつた。したがつて、近時、ますます微細化の傾
向にある微細パターンの無欠陥のものを作製する
ことは極めて困難な情況にあつた。 However, this conventional correction using a brush requires skill, and even for an expert, the width of the defect is limited to about 30 μm due to the thickness of the tip of the brush, and smaller defects can be corrected. was impossible. Therefore, in recent years, it has been extremely difficult to produce defect-free fine patterns, which are becoming increasingly finer.
この発明は上記事情に鑑みてなされたものであ
つて、数μm程度の遮光パターンの欠損でも容易
に修正することができるフオトマスク基板上のマ
スクパターンの修正方法を提供することを目的と
する。 The present invention has been made in view of the above circumstances, and it is an object of the present invention to provide a method for repairing a mask pattern on a photomask substrate, which can easily repair even defects in a light-shielding pattern of about several μm.
すなわち、この発明はマスクパターンを被着し
たマスク基板の該マスクパターンの欠損部を、ま
ずレーザ光蒸発性インキにより、該欠損部よりは
み出る程度に大きく充填し、ついで、不必要なイ
ンキはみ出し部分をレーザ光により蒸発させるこ
とを特徴とするマスク基板上のマスクパターンの
修正方法を提供するものである。 That is, the present invention first fills the defective portions of the mask pattern of the mask substrate on which the mask pattern is adhered with laser light evaporable ink to the extent that it protrudes beyond the defective portions, and then removes unnecessary ink protruding portions. The present invention provides a method for modifying a mask pattern on a mask substrate, characterized in that the mask pattern is evaporated by laser light.
この発明は、手修正では修正困難な微細なマス
クパターン欠陥部を、レーザ光照射により蒸発す
るインキ（すなわちレーザ光蒸発性インキ）を用
いて、この欠陥部を拡大視しながら欠陥部をその
範囲からはみ出る程度に大まかに修正し、つい
で、適当に細いレーザ光を照射装置を用い、拡大
視しながら、そのはみ出し部に照射させて蒸発除
去する方法であり、特定のインキとレーザ光との
組合せを利用したところに特徴がある。 This invention uses ink that evaporates by laser light irradiation (i.e., laser light evaporable ink) to correct fine mask pattern defects that are difficult to correct by manual correction. This is a method in which the ink is roughly corrected to the extent that it protrudes from the ink, and then a suitably thin laser beam is applied to the protruding part using an irradiation device while magnifying the image to evaporate and remove it. It is characterized by the use of .
このレーザ光蒸発性インキの具体例としてはラ
ンプブラツクの有機溶媒溶液（たとえばトルエン
＋イソプロピルアルコール）である。 A specific example of this laser light evaporable ink is a solution of lamp black in an organic solvent (for example, toluene + isopropyl alcohol).
なお、手修正で修正容易な個所については従来
通り墨又はインキにて修正してよい。 Note that areas that can be easily corrected by hand may be corrected using black or ink as usual.
以下、この発明を図面を参照して説明する。 Hereinafter, the present invention will be explained with reference to the drawings.
第１図はマスクパターン基板１上に被着された
銀エマルジヨン遮光パターン２，３およびその欠
損部２ａ，３ａを示している。まず、これら欠損
部２ａ，３ａを拡大視しながら、これら欠損部２
ａ，３ａを、第２図に示す如くそれぞれ埋めつく
し、かつ一部が所定の線２ｂ，３ｂから、はみ出
る程度に筆又はその他の筆記手段によりレーザ光
蒸発性インキ４（たとえばランプブラツクNo.５
（昭和インキ工業(株)製、商品名）10重量部、トル
エン60重量部、イソプロピルアルコール30重量部
からなるインキ）で塗布する。 FIG. 1 shows silver emulsion light-shielding patterns 2 and 3 deposited on a mask pattern substrate 1 and their missing portions 2a and 3a. First, while viewing these defective parts 2a and 3a in an enlarged manner,
a, 3a, respectively, as shown in FIG. 2, and inject laser light evaporable ink 4 (for example, lamp black No.
(manufactured by Showa Ink Kogyo Co., Ltd., trade name) (an ink consisting of 10 parts by weight, 60 parts by weight of toluene, and 30 parts by weight of isopropyl alcohol).
ついで、レーザ光照射装置（日本電気(株)製
SL451型）で、拡大視しながら各インキはみ出し
部４ａ，４ｂにレーザ光をスポツト照射し、第３
図に示す如くこれらはみ出し部４ａ，４ｂのイン
キを蒸発除去することにより修正が完了する。 Next, a laser beam irradiation device (manufactured by NEC Corporation) was installed.
SL451 model), spot irradiate the ink protruding parts 4a and 4b with a laser beam while looking under magnification.
As shown in the figure, the correction is completed by evaporating and removing the ink on these protruding portions 4a and 4b.
以上、詳述したように、本発明によればマスク
パターンの欠損部の修正をレーザ光蒸発性インキ
を用いて大まかにおこない、ついでレーザ光線に
より正確に再度修正するようにしたから、修正個
所の巾が30μmより若干小さいものはもちろん、
数μmの極めて小さいものでも熟練を要すること
なく容易かつ正確におこなうことができる。 As described in detail above, according to the present invention, the defective portions of the mask pattern are roughly corrected using laser light evaporable ink, and then accurately corrected again using a laser beam. Of course, the width is slightly smaller than 30μm,
Even extremely small objects of several μm can be easily and accurately processed without requiring any skill.
第１〜３図は本発明の方法を工程順に説明する
ためのマスクパターン基板の一部の平面図であ
る。
図中、１…マスクパターン基板、２，３…銀エ
マルジヨンパターン、２ａ，３ａ…欠損部、４
ａ，４ｂ…インキはみ出し部。
1 to 3 are plan views of a part of a mask pattern substrate for explaining the method of the present invention step by step. In the figure, 1... mask pattern substrate, 2, 3... silver emulsion pattern, 2a, 3a... defective part, 4
a, 4b... Ink protruding portion.
Claims (1)
スクパターンの欠損部を、まずレーザ光蒸発性イ
ンキにより、該欠損部よりはみ出る程度に大きく
充填し、ついで、不必要なインキはみ出し部分を
レーザ光により蒸発させることを特徴とするマス
ク基板上のマスクパターンの修正方法。 ２ レーザ光蒸発性インキがランプブラツクの有
機溶媒溶液からなる特許請求の範囲第１項記載の
マスクパターンの修正方法。[Scope of Claims] 1. First, the defective part of the mask pattern of the mask substrate on which the mask pattern is attached is filled with laser light evaporable ink to the extent that it protrudes from the defective part, and then unnecessary ink is removed. A method for modifying a mask pattern on a mask substrate, the method comprising evaporating a portion of the mask pattern using a laser beam. 2. The mask pattern correction method according to claim 1, wherein the laser photoevaporable ink is an organic solvent solution of lamp black.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59111929A JPS60254729A (en) | 1984-05-31 | 1984-05-31 | Correction of mask pattern on mask substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59111929A JPS60254729A (en) | 1984-05-31 | 1984-05-31 | Correction of mask pattern on mask substrate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60254729A JPS60254729A (en) | 1985-12-16 |
| JPS6311659B2 true JPS6311659B2 (en) | 1988-03-15 |
Family
ID=14573662
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59111929A Granted JPS60254729A (en) | 1984-05-31 | 1984-05-31 | Correction of mask pattern on mask substrate |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60254729A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62195662A (en) * | 1986-02-24 | 1987-08-28 | Seiko Instr & Electronics Ltd | Method and device for repairing mask |
| JP4337746B2 (en) | 2005-03-09 | 2009-09-30 | セイコーエプソン株式会社 | Photomask, manufacturing method thereof, and manufacturing method of electronic device |
-
1984
- 1984-05-31 JP JP59111929A patent/JPS60254729A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60254729A (en) | 1985-12-16 |
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