JPS6317589B2 - - Google Patents
Info
- Publication number
- JPS6317589B2 JPS6317589B2 JP54002453A JP245379A JPS6317589B2 JP S6317589 B2 JPS6317589 B2 JP S6317589B2 JP 54002453 A JP54002453 A JP 54002453A JP 245379 A JP245379 A JP 245379A JP S6317589 B2 JPS6317589 B2 JP S6317589B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- workpiece
- water
- wax
- polishing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Landscapes
- Jigs For Machine Tools (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Description
【発明の詳細な説明】
本発明は特に厚みが100μm以下の超薄物部品の
精密加工法に関するもので、ワツクスを全く使用
しないで長時間に渡つて接着強度及び接着精度を
得ることができ、しかもワツクス類を全く使用し
ない為にワツクスの溶融加熱除去及び後洗滌等の
工程の負荷を削減することが出来る事で、十分そ
の機能を満足せしめ得るものである。従来の片面
ラツピング及びポリシング法は、ベースとなる基
板とワーク(被加工物)との間にワツクスを介在
させることで固定強度を保持しているが、ワツク
スの量が多いと固定力は維持出来るがワツクス層
に厚みのバラツキを生じせしめ、又ワツクス量を
極端に少くすると固定力が弱まる。又ワツクスの
選定も融点があまり高いと作業性が悪く、さらに
薄くのばすという制約からも限度があり、一般的
には強度を犠性にしてパラフイン等を主成分とす
る低融点のものを使用しているのが実状である。
又ワツクスの精製上不純物を皆無にすることは難
かしく、又ワツクス層の不均一性及びワークとワ
ツクス間の熱応力分布の不均一性からして、ワツ
クス層を高精度に均一化することは非常に難かし
かつた。DETAILED DESCRIPTION OF THE INVENTION The present invention particularly relates to a precision processing method for ultra-thin parts with a thickness of 100 μm or less, and is capable of obtaining adhesive strength and adhesive accuracy for a long time without using wax at all. Moreover, since no waxes are used at all, it is possible to reduce the burden of processes such as melting and heating removal of wax and post-washing, so that the function can be fully satisfied. In the conventional single-sided wrapping and polishing method, the fixing strength is maintained by interposing wax between the base substrate and the workpiece (workpiece), but if there is a large amount of wax, the fixing force can be maintained. This causes variations in the thickness of the wax layer, and if the amount of wax is extremely reduced, the fixing force is weakened. In addition, there is a limit to the selection of waxes because if the melting point is too high, workability will be poor, and there is also a restriction on spreading the wax thinly.In general, waxes with a low melting point mainly composed of paraffin etc. are used at the expense of strength. The reality is that
Furthermore, it is difficult to completely eliminate impurities when refining wax, and due to the non-uniformity of the wax layer and the non-uniformity of the thermal stress distribution between the workpiece and the wax, it is difficult to uniformize the wax layer with high precision. It was very difficult.
ワークのサイズが大きくなると、特に量産性も
加味すると、3〜5μmのワツクス層のバラツキは
必然的に生じてしまい、一応の限界値と考えられ
ていた。このように、ワツクスの層にバラツキが
あるとワークのラツピング及びポリシング厚み精
度としては、直線的にその影響を受け、ワークの
厚み精度は極めて悪いものとなる。 As the size of the workpiece increases, especially when mass production is taken into account, variations in the wax layer of 3 to 5 μm inevitably occur, and this was considered to be the limit. As described above, when there is variation in the wax layer, the wrapping and polishing thickness accuracy of the workpiece is linearly affected by the variation, and the thickness accuracy of the workpiece becomes extremely poor.
ワツクスを使用することによる悪影響を除去す
るための一法として、ワツクスを全く使用しない
で真空で吸着する方法も考えられるが、特に薄物
になると吸着部と非吸着部との間に応力の不均一
を招き、結果的にはポリシング面に吸引模様を生
じせしめ、平坦度は極めて悪いものとなるのが通
例である。 One way to eliminate the negative effects of using wax is to use vacuum vacuum adsorption without using wax at all, but especially when it comes to thin objects, the stress may be uneven between the adsorbed and non-adsorbed parts. This generally results in a suction pattern on the polished surface, resulting in extremely poor flatness.
更に他の方法として、通常焼結体でない基板、
例えばガラス基板又は金属基板上に水張り接着す
ることで仮接着する方法は以前から考えられてい
るが、この場合ワークと基板間の水の介在量で接
着強度は変動する。また時間の経過と共に水分の
蒸発で光学接着に近いものになるが接着強度は劣
化する。 Furthermore, as another method, a substrate that is not usually a sintered body,
For example, a method of temporary adhesion by applying water on a glass substrate or a metal substrate has been considered for some time, but in this case, the adhesive strength varies depending on the amount of water interposed between the workpiece and the substrate. Moreover, as time passes, moisture evaporates, resulting in a bond close to optical bonding, but the adhesive strength deteriorates.
本発明はこれらの幣害を解消し、接着剤層の影
響を皆無にし、接着強度をも充分に得ることので
きる加工法を提案することを目的とする。 The object of the present invention is to propose a processing method that can eliminate these problems, completely eliminate the influence of the adhesive layer, and obtain sufficient adhesive strength.
上記目的を達成させるため、ワーク接着用の基
板を気孔率の高い焼結体による基板とし、ワーク
接着の為に水接着を採用し、基板の気孔部内部に
水を含侵させ、水のワークと基板間の介在量を
ほゞ一定とすると同時に、ワークの周囲にオイル
シーリングを施すことにより水の蒸発による強度
低下がなく長時間に渡つて接着強度を維持できる
ようにしたものである。 In order to achieve the above objective, the substrate for adhering the workpiece is made of a sintered body with high porosity, water adhesion is adopted for adhering the workpiece, and water is impregnated inside the pores of the substrate. By keeping the amount of interposition between the workpiece and the substrate almost constant, and at the same time applying oil sealing around the workpiece, it is possible to maintain adhesive strength over a long period of time without decreasing the strength due to water evaporation.
本発明に用いる基板としては気孔率の高い焼結
体を用い、焼結体はAl2O3又はSiC又はWC及び金
属粉末を主成分とする原料粉末とCo,Ni等のバ
インダーを混合型に充填し、電気還元雰囲気中で
850℃〜1500℃で加熱焼結を行うことでポーラス
状の基板を形成する。 A sintered body with high porosity is used as the substrate used in the present invention, and the sintered body is a mixture of raw material powder mainly composed of Al 2 O 3 or SiC or WC and metal powder and a binder such as Co or Ni. Filled and in an electro-reducing atmosphere
A porous substrate is formed by heating and sintering at 850°C to 1500°C.
以下図面により本発明を説明する。 The present invention will be explained below with reference to the drawings.
第1図は、本発明の実施例による薄物ウエフア
ーと基板との接着状態を示す断面図で、第2図は
その部分詳細図である。 FIG. 1 is a sectional view showing the state of adhesion between a thin wafer and a substrate according to an embodiment of the present invention, and FIG. 2 is a partially detailed view thereof.
1はワーク、2は基板、3は水、4はシーリン
グオイルを示す。 1 is a workpiece, 2 is a substrate, 3 is water, and 4 is sealing oil.
先ず基板2の接着面は、前もつて0.1s以下の鏡
面加工を施しておき、接合に際して基板内部に水
3を含侵させておく。内部はポーラス状組成の為
に水を含ませると毛細管現象で水は内部まで含侵
させる。ワーク1は、少くとも接着面だけは鏡面
加工しておき、基板2との接合は水張りする。基
板2の表面に水分が多すぎると接着強度は劣るの
で、強制乾燥させるかあるいは時間の経過ととも
に自然乾燥させて基板2の表面の水分を蒸発さ
せ、ポーラス内の水分にてワーク1を接着するこ
とによつて接合強度は増加する。ある程度接合強
度が増加した時点で、外周部は例えば低粘度のシ
リコンオイル4等でシーリングすることによつて
ワーク1と基板2との水分の蒸発を防ぐことがで
きるため、接合強度を充分維持できるワークの固
定を達成することができる。シリコンオイル4の
場合、高温耐薬品性の点で効果を発揮する。シー
リングオイル4の併用で、長時間経過しても基板
内部に含侵された水分で表面張力は維持出来、接
着強度は保持出来る。 First, the bonding surface of the substrate 2 is previously mirror-finished for 0.1 seconds or less, and water 3 is impregnated into the substrate before bonding. Since the inside has a porous composition, when water is added, the water penetrates into the inside due to capillary action. At least the adhesive surface of the workpiece 1 is mirror-finished, and the bonding surface with the substrate 2 is filled with water. If there is too much moisture on the surface of the substrate 2, the adhesive strength will be poor, so the moisture on the surface of the substrate 2 is evaporated by forced drying or natural drying over time, and the work 1 is bonded with the moisture in the porous areas. This increases the bond strength. Once the bonding strength has increased to a certain extent, the outer periphery can be sealed with low viscosity silicone oil 4, etc. to prevent moisture from evaporating between the workpiece 1 and the substrate 2, so that the bonding strength can be maintained sufficiently. Fixation of the workpiece can be achieved. In the case of silicone oil 4, it is effective in terms of high temperature chemical resistance. By using the sealing oil 4 in combination, the surface tension can be maintained due to the moisture impregnated inside the substrate even after a long period of time, and the adhesive strength can be maintained.
以上述べた如く本発明によれば、ポーラス状の
基板で水接着することにより接着剤による悪影響
を除去できワークの厚さ精度を均一と成すことが
でき、更にオイルによりシーリングすることによ
つて接着強度を保持できるため、特に100μm以下
の超薄物ウエハーのラツピング及びポリシング加
工上極めて高精度の加工が得られる。 As described above, according to the present invention, by water-bonding a porous substrate, it is possible to eliminate the adverse effects of the adhesive and to achieve uniform thickness accuracy of the workpiece, and further, by sealing with oil, it is possible to bond the workpiece with water. Since the strength can be maintained, extremely high precision processing can be achieved especially when wrapping and polishing ultra-thin wafers of 100 μm or less.
第1図は薄物ウエハーと基板との接合断面図、
第2図はその部分詳細図である。
1…ワーク、2…基板、3…水、4…シーリン
グオイル。
Figure 1 is a cross-sectional view of the bonding between the thin wafer and the substrate.
FIG. 2 is a detailed view of a portion thereof. 1...Workpiece, 2...Substrate, 3...Water, 4...Sealing oil.
Claims (1)
ライト等で構成される略厚さ100μm以下の超薄型
部品の超精密片面ラツピングあるいはポリシング
加工に於いて、ワークを接着する基板としてポー
ラス状のAl2O3系又はSiC系又はWC系又は金属等
の焼結体を使用し接着面をあらかじめ鏡面加工し
た前記基板に前記ワークを水の表面張力を利用し
て接着するとともに、油膜等によりシーリングし
て前記ワークを前記基板に固定した後、ラツピン
グあるいはポリシング等の加工を行うことを特徴
とする部品加工法。1. In ultra-precision one-sided wrapping or polishing of ultra-thin parts with a thickness of approximately 100 μm or less made of crystal, glass, ceramic, silicon, ferrite, etc., porous Al 2 O 3 is used as a substrate to bond the workpiece. The workpiece is bonded to the substrate using a sintered body of SiC, SiC, WC, metal, etc., the bonding surface of which has been mirror-finished in advance, using the surface tension of water, and the workpiece is sealed with an oil film or the like. A part processing method characterized by performing processing such as wrapping or polishing after fixing the part to the substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP245379A JPS5596267A (en) | 1979-01-12 | 1979-01-12 | Parts working method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP245379A JPS5596267A (en) | 1979-01-12 | 1979-01-12 | Parts working method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5596267A JPS5596267A (en) | 1980-07-22 |
| JPS6317589B2 true JPS6317589B2 (en) | 1988-04-14 |
Family
ID=11529698
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP245379A Granted JPS5596267A (en) | 1979-01-12 | 1979-01-12 | Parts working method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5596267A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58137555A (en) * | 1982-02-09 | 1983-08-16 | Kyocera Corp | Polishing board and polishing method using it |
| DE102006021647A1 (en) * | 2005-11-09 | 2007-11-15 | Coenen, Wolfgang, Dipl.-Ing. | Method for separating disc-shaped substrates using adhesion forces |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5911423B2 (en) * | 1974-04-10 | 1984-03-15 | 株式会社日立製作所 | wrapping device |
-
1979
- 1979-01-12 JP JP245379A patent/JPS5596267A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5596267A (en) | 1980-07-22 |
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