JPS632362B2 - - Google Patents
Info
- Publication number
- JPS632362B2 JPS632362B2 JP11986481A JP11986481A JPS632362B2 JP S632362 B2 JPS632362 B2 JP S632362B2 JP 11986481 A JP11986481 A JP 11986481A JP 11986481 A JP11986481 A JP 11986481A JP S632362 B2 JPS632362 B2 JP S632362B2
- Authority
- JP
- Japan
- Prior art keywords
- dielectric
- center electrode
- present
- electrode film
- full
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 239000003989 dielectric material Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 230000005855 radiation Effects 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- LTPBRCUWZOMYOC-UHFFFAOYSA-N Beryllium oxide Chemical compound O=[Be] LTPBRCUWZOMYOC-UHFFFAOYSA-N 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P3/00—Waveguides; Transmission lines of the waveguide type
- H01P3/02—Waveguides; Transmission lines of the waveguide type with two longitudinal conductors
- H01P3/08—Microstrips; Strip lines
- H01P3/085—Triplate lines
Landscapes
- Waveguides (AREA)
Description
【発明の詳細な説明】
この発明は、特性がすぐれたストリツプライン
の製造方法に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method of manufacturing a stripline with excellent properties.
第１図は通常のストリツプライン１を示し、ア
ルミナやベリリアからなる誘電体基板２の一方主
表面に中心電極２が形成され、他方主表面に全面
電極３が形成されたものである。 FIG. 1 shows a conventional stripline 1, in which a center electrode 2 is formed on one main surface of a dielectric substrate 2 made of alumina or beryllia, and an entire surface electrode 3 is formed on the other main surface.
このような構造では、中心電極２の上方に誘電
体基板２のそれと異なる誘電率をもつたとえば空
気が存在するため、実効εrが基板２のεrの1/2
〜1/3に小さくなる、放射損失が生じる、完
全なTEMモードにならず準TEMモードになる、
などの欠点がある。 In such a structure, since air, for example, having a dielectric constant different from that of the dielectric substrate 2 exists above the center electrode 2, the effective εr is 1/2 of the εr of the substrate 2.
It becomes ~1/3 smaller, radiation loss occurs, it becomes quasi-TEM mode instead of full TEM mode,
There are drawbacks such as.
そこで、実効誘電率を大きくして、ストリツ
プラインを小形にする、放射損失をなくする、
完全なTEMモードにし、外界の影響を受けな
にようにして、設計が容易になるようにする、な
どを目的として、片面に全面電極を設けた一対の
誘電体基板の他面間に中心電極を存在させてなる
構造のストリツプラインが提案されている。 Therefore, we need to increase the effective dielectric constant, make the stripline smaller, and eliminate radiation loss.
A center electrode is placed between a pair of dielectric substrates with a full-surface electrode on one side and the other side for the purpose of making the design easier by making the design completely TEM mode and avoiding the influence of the outside world. A stripline structure has been proposed in which the presence of .
ところで、ストリツプラインの損失αは一般に
次のように表される。 By the way, the stripline loss α is generally expressed as follows.
α＝αd＋αc＋αr
ここで、αdは誘電体基板の誘電損失、αcは電
極の電気抵抗による損失（銅損）、αrは放射損失
である。本発明の実施例で用いる材料のtanδは通
常10-4のオーダーなので、αに占めるαdの大き
さはαcやαrに比べて一般に小さい。また、αrは
上述したような誘電体基板間に中心電極が存在す
る構造だと０である。したがつて銅損をできるだ
け小さくすることがストリツプラインの損失を小
さくすることにつながる。 α=αd+αc+αr Here, αd is the dielectric loss of the dielectric substrate, αc is the loss due to the electrical resistance of the electrode (copper loss), and αr is the radiation loss. Since the tan δ of the material used in the embodiments of the present invention is usually on the order of 10 -4 , the size of αd in α is generally smaller than αc and αr. Further, αr is 0 in the structure where the center electrode exists between the dielectric substrates as described above. Therefore, reducing copper loss as much as possible leads to reducing stripline loss.
それゆえにこの発明の目的は、損失を小さくし
たストリツプラインを提供することである。 It is therefore an object of the invention to provide a stripline with reduced losses.
この発明の要旨は、たとえば（BaCa）ZrO3＋
MnO2系材料、CaZrO3＋MnO2系材料のような、
第１、第２の誘電性グリーンシートのそれぞれの
第１の主表面にNiからなる全面電極膜を存在さ
せるとともに、前記第１、第２の誘電体グリーン
シートのそれぞれの第２の主表面間にNiからな
る中心電極膜を存在させた後、第１、第２のグリ
ーンシートを圧着し、還元雰囲気中でシートと電
極を同時に焼成することである。 The gist of this invention is, for example, (BaCa)ZrO 3 +
such as MnO 2 -based materials, CaZrO 3 +MnO 2 -based materials,
A full-surface electrode film made of Ni is present on the first main surface of each of the first and second dielectric green sheets, and between the second main surfaces of the first and second dielectric green sheets. After a center electrode film made of Ni is present in the wafer, the first and second green sheets are pressed together, and the sheet and the electrode are simultaneously fired in a reducing atmosphere.
ここで、電極にNiを使用するのは、通常電極
として用いられるPtやPdよりも、Niの電気抵抗
が小さいためであり、また、焼付を還元雰囲気中
で行うのはNi電極の酸化を防ぎ電気抵抗を小さ
く保つためのものである。しかし通常の誘電体シ
ートを還元雰囲気中で焼付すると、誘電体が還元
され、半導体化してしまう。したがつて誘電体材
料には、前述したような、（BaCa）ZrO3＋MnO2
系やCaZrO3＋MnO2材料系のような還元雰囲気
中で焼付しても半導体化しない非還元性誘電体材
料を使わねばならない。 Here, Ni is used for the electrode because its electrical resistance is lower than Pt or Pd, which are normally used for electrodes, and baking is performed in a reducing atmosphere to prevent oxidation of the Ni electrode. This is to keep electrical resistance low. However, when a normal dielectric sheet is baked in a reducing atmosphere, the dielectric material is reduced and becomes a semiconductor. Therefore, dielectric materials include (BaCa)ZrO 3 +MnO 2 as mentioned above.
A non-reducible dielectric material that does not become a semiconductor even when baked in a reducing atmosphere, such as a CaZrO 3 +MnO 2 material system, must be used.
この発明のその他の目的と特徴は以下にのべる
実施例からもあきらかになる。 Other objects and features of the invention will become apparent from the following examples.
第２図はこの発明の一実施例で得られたもので
あり、１１は上述したような従来公知の（たとえ
ば特開昭53−98099号公報、特開昭53−98100号公
報）材料からなる第１の誘電体、１２は、第１の
誘電体１１と同様の第２の誘電体、１３はNiか
らなる中心電極で、第１、第２の誘電体間に存在
する。１４，１５はNiからなる全面電極で、そ
れぞれ第１、第２の誘電体を介して中心電極１３
と対となるよう第１、第２の誘電体の表面に存在
する。 Fig. 2 shows the result obtained in one embodiment of the present invention, and 11 is made of a conventionally known material as described above (e.g., JP-A-53-98099, JP-A-53-98100). A first dielectric 12 is a second dielectric similar to the first dielectric 11, and 13 is a center electrode made of Ni, which is present between the first and second dielectrics. 14 and 15 are full-surface electrodes made of Ni, which are connected to the center electrode 13 through the first and second dielectrics, respectively.
It exists on the surfaces of the first and second dielectrics so as to be paired with.
つぎに、第３図にしたがつて製造方法を説明す
る。 Next, the manufacturing method will be explained with reference to FIG.
上述したような材料を用いて第１の誘電体グリ
ーンシート１１の一方面に中心電極膜１３を印
刷、蒸着などの方法で形成する。第１の誘電体グ
リーンシート１１の他方面には全面電極膜１４を
印刷、蒸着などの方法で形成する。第２の誘電体
グリーンシート１２の一方面に全面電極膜１５を
印刷、蒸着などの方法で形成する。第２の誘電体
グリーンシート１２の他方面を第１の誘電体グリ
ーンシート１１の一方面、すなわち中心電極膜１
３が設けてある面に圧着する。その後N2とH2と
の混合気中で還元焼成すると第１、第２の誘電体
グリーンシート１１，１２が融着する。中心電極
膜１３は第４図に示すように複数個設けてもよい
し、第２〜３図や第４図のものをたとえば第５図
に示すように複数層重ねて構成してもよい。 The center electrode film 13 is formed on one side of the first dielectric green sheet 11 by a method such as printing or vapor deposition using the above-mentioned material. A full-surface electrode film 14 is formed on the other side of the first dielectric green sheet 11 by a method such as printing or vapor deposition. A full-surface electrode film 15 is formed on one side of the second dielectric green sheet 12 by a method such as printing or vapor deposition. The other side of the second dielectric green sheet 12 is connected to one side of the first dielectric green sheet 11, that is, the center electrode film 1
Press it onto the surface where 3 is provided. Thereafter, the first and second dielectric green sheets 11 and 12 are fused together by reduction firing in a mixture of N 2 and H 2 . A plurality of center electrode films 13 may be provided as shown in FIG. 4, or the center electrode films 13 shown in FIGS. 2-3 and 4 may be stacked in multiple layers as shown in FIG. 5, for example.
以上の実施例からもあきらかなように、この発
明によると、第１、第２の非還元性誘電体グリー
ンシートのそれぞれの第１の主表面にNiからな
る全面電極膜を存在させるとともに、前記第１、
第２の非還元性誘電体グリーンシートのそれぞれ
の第２の主表面間にNiからなる中心電極膜を存
在させた後、還元雰囲気中で焼成したので、放射
損失のない構造において、銅損の少ないNi電極
を用いることができ、さらに特性を向上させるこ
とができる。 As is clear from the above embodiments, according to the present invention, a full-surface electrode film made of Ni is present on the first main surface of each of the first and second non-reducible dielectric green sheets, and First,
Since a center electrode film made of Ni was placed between the second main surfaces of each of the second non-reducing dielectric green sheets and then fired in a reducing atmosphere, copper loss was reduced in a structure with no radiation loss. It is possible to use less Ni electrodes and further improve the characteristics.
このような効果があるので、本発明は、たとえ
ば分岐器やフイルタに応用できるなど有益な発明
である。 Because of these effects, the present invention is a useful invention that can be applied to, for example, branching switches and filters.
第１図は、従来例の側面図、第２図は、本発明
一実施例の側面図、第３図は、同、分解斜視図、
第４図は、同、変形例の側面図、第５図は、同、
変形例の側面図である。
１１は第１の誘電体、１２は第２の誘電体、１
３は中心電極、１４，１５は全面電極。
FIG. 1 is a side view of a conventional example, FIG. 2 is a side view of an embodiment of the present invention, and FIG. 3 is an exploded perspective view of the same.
FIG. 4 is a side view of the same modification, and FIG. 5 is the same,
It is a side view of a modification. 11 is a first dielectric, 12 is a second dielectric, 1
3 is the center electrode, 14 and 15 are the entire surface electrodes.
Claims (1)
のそれぞれの第１の主表面にNiからなる全面電
極膜を存在させるとともに、前記第１、第２の非
還元性誘電体グリーンシートのそれぞれの第２の
主表面間にNiからなる中心電極膜を存在させた
後、還元雰囲気中で焼成することを特徴とする、
ストリツプラインの製造方法。1. A full-surface electrode film made of Ni is present on the first main surface of each of the first and second non-reducing dielectric green sheets, and each of the first and second non-reducing dielectric green sheets is After a center electrode film made of Ni is present between the second main surfaces of the film, the film is fired in a reducing atmosphere.
Method of manufacturing strip lines.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11986481A JPS5820003A (en) | 1981-07-29 | 1981-07-29 | Production of strip line |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11986481A JPS5820003A (en) | 1981-07-29 | 1981-07-29 | Production of strip line |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5820003A JPS5820003A (en) | 1983-02-05 |
| JPS632362B2 true JPS632362B2 (en) | 1988-01-19 |
Family
ID=14772154
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11986481A Granted JPS5820003A (en) | 1981-07-29 | 1981-07-29 | Production of strip line |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5820003A (en) |
-
1981
- 1981-07-29 JP JP11986481A patent/JPS5820003A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5820003A (en) | 1983-02-05 |
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