JPS6332282B2 - - Google Patents
Info
- Publication number
- JPS6332282B2 JPS6332282B2 JP11986581A JP11986581A JPS6332282B2 JP S6332282 B2 JPS6332282 B2 JP S6332282B2 JP 11986581 A JP11986581 A JP 11986581A JP 11986581 A JP11986581 A JP 11986581A JP S6332282 B2 JPS6332282 B2 JP S6332282B2
- Authority
- JP
- Japan
- Prior art keywords
- dielectric
- center electrode
- stripline
- loss
- present
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000758 substrate Substances 0.000 claims description 10
- 239000011521 glass Substances 0.000 claims description 4
- 238000000034 method Methods 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 239000003989 dielectric material Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 229910052709 silver Inorganic materials 0.000 description 5
- 239000004332 silver Substances 0.000 description 5
- 230000005855 radiation Effects 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- LTPBRCUWZOMYOC-UHFFFAOYSA-N Beryllium oxide Chemical compound O=[Be] LTPBRCUWZOMYOC-UHFFFAOYSA-N 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910016063 BaPb Inorganic materials 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 229910010252 TiO3 Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N titanium dioxide Inorganic materials O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P3/00—Waveguides; Transmission lines of the waveguide type
- H01P3/02—Waveguides; Transmission lines of the waveguide type with two longitudinal conductors
- H01P3/08—Microstrips; Strip lines
- H01P3/085—Triplate lines
Landscapes
- Waveguides (AREA)
- Inorganic Insulating Materials (AREA)
Description
【発明の詳細な説明】
この発明は、特性がすぐれたストリツプライン
の製造方法に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method of manufacturing a stripline with excellent properties.
第１図は通常のストリツプライン１を示し、ア
ルミナやベリリアからなる誘電体基板２の一方主
表面に中心電極２が形成され、他方主表面に全面
電極３が形成されたものである。 FIG. 1 shows a conventional stripline 1, in which a center electrode 2 is formed on one main surface of a dielectric substrate 2 made of alumina or beryllia, and an entire surface electrode 3 is formed on the other main surface.
このような構造では、中心電極２の上方に誘電
体基板２のそれと異なる誘電率をもつたとえば空
気が存在するため、実効εrが基板２のεrの1/2
〜1/3に小さくなる、放射損失が生じる、完
全なTEMモードにならず準TEMモードになる、
などの欠点がある。 In such a structure, since air, for example, having a dielectric constant different from that of the dielectric substrate 2 exists above the center electrode 2, the effective εr is 1/2 of the εr of the substrate 2.
It becomes ~1/3 smaller, radiation loss occurs, it becomes quasi-TEM mode instead of full TEM mode,
There are drawbacks such as.
そこで、実効誘電率を大きくしてストリツプ
ラインを小形にする、放射損失をなくする、
完全なTEMモードにし、外界の影響を受けない
ようにして、設計が容易になるようにする、など
を目的として、片面に全面電極を設けた一対の誘
電体基板の他面間に中心電極を存在させてなる構
造のストリツプラインが提案されている。 Therefore, we need to increase the effective permittivity, make the stripline smaller, and eliminate radiation loss.
In order to achieve complete TEM mode, avoid external influences, and simplify design, a center electrode is placed between a pair of dielectric substrates with a full-surface electrode on one side and the other side. A stripline structure has been proposed in which the presence of
ところで、ストリツプラインの損失αは一般に
次のように表される。 By the way, the stripline loss α is generally expressed as follows.
α＝αd＋αc＋αr
ここで、αdは誘電体基板の誘電損失、αcは電
極の電気抵抗による損失（銅損）、αrは放射損失
である。本発明の実施例で用いる材料のtanδは通
常10-4のオーダーなので、αに占めるαdの大き
さはαcやαrに比べて一般に小さい。また、αrは
上述したような誘電体基板間に中心電極が存在す
る構造だと０である。したがつて銅損をできるだ
け小さくすることがストリツプラインの損失を小
さくすることにつながる。 α=αd+αc+αr Here, αd is the dielectric loss of the dielectric substrate, αc is the loss due to the electrical resistance of the electrode (copper loss), and αr is the radiation loss. Since the tan δ of the material used in the embodiments of the present invention is usually on the order of 10 -4 , the size of αd in α is generally smaller than αc and αr. Further, αr is 0 in the structure where the center electrode exists between the dielectric substrates as described above. Therefore, reducing copper loss as much as possible leads to reducing stripline loss.
それゆえにこの発明の目的は、損失を小さくし
たストリツプラインを提供することである。 It is therefore an object of the invention to provide a stripline with reduced losses.
この発明の要旨は、片面に銀のような低抵抗の
材料からなる全面電極を設けた一対の誘電体基板
の他面間に銀のような低抵抗の材料からなる中心
電極を存在させて他面同士をガラスグレーズで貼
りつけることである。 The gist of this invention is to provide a pair of dielectric substrates with a full-surface electrode made of a low-resistance material such as silver on one side and a center electrode made of a low-resistance material such as silver between the other surfaces. This involves pasting the surfaces together with glass glaze.
この発明のその他の目的と特徴は以下にのべる
実施例からもあきらかになる。 Other objects and features of the invention will become apparent from the following examples.
第２図はこの発明の一実施例で得られたもので
あり、１１はストリツプラインを用いるような高
周波域で高いＱと高いεr（たとえばεr＝20〜100）
をもつ材料、たとえばMgTiO3−CaTiO3系、
ZrO2−SnO2−TiO2系、BaTi4O9系、Nd2Ti2O7
−（BaPb）TiO3−TiO2系誘電体材料からなる第
１の誘電体、１２は、第１の誘電体１１と同様の
第２の誘電体、１３は銀を主成分とする中心電極
で、第１、第２の誘電体間に存在する。１４，１
５は銀を主成分とする全面電極で、それぞれ第
１、第２の誘電体を介して中心電極１３と対とな
るよう第１、第２の誘電体の表面に存在する。 Figure 2 shows what was obtained in one embodiment of the present invention, and 11 shows a high Q and high εr (for example, εr=20 to 100) in a high frequency range where a stripline is used.
materials, such as MgTiO 3 −CaTiO 3 system,
ZrO 2 −SnO 2 −TiO 2 system, BaTi 4 O 9 system, Nd 2 Ti 2 O 7
-(BaPb) TiO3 - TiO2 -based dielectric material; 12 is a second dielectric material similar to the first dielectric material 11; 13 is a center electrode mainly composed of silver; , exists between the first and second dielectrics. 14,1
Reference numeral 5 denotes a full-surface electrode mainly composed of silver, which is present on the surfaces of the first and second dielectrics so as to pair with the center electrode 13 via the first and second dielectrics, respectively.
つぎに、第３図にしたがつて製造方法を説明す
る。 Next, the manufacturing method will be explained with reference to FIG.
上述したような材料を用いて第１の誘電体１１
の一方面に中心電極膜１３を印刷、蒸着などの方
法で形成する。第１の誘電体１１の他方面には全
面電極膜１４を印刷、蒸着などの方法で形成す
る。第２の誘電体１２の一方面に全面電極膜１５
を印刷、蒸着などの方法で形成する。第２の誘電
体１２の他方面と第１の誘電体１１の一方面、す
なわち中心電極膜１３が設けてある面とをガラス
グレーズを用い800℃程度の温度で貼りつける。
中心電極膜１３は第４図に示すように複数個設け
てもよいし、第２〜３図や第４図のものをたとえ
ば第５図に示すように複数層重ねて構成してもよ
い。 The first dielectric 11 is made of a material such as that described above.
A center electrode film 13 is formed on one side of the substrate by a method such as printing or vapor deposition. A full-surface electrode film 14 is formed on the other surface of the first dielectric 11 by a method such as printing or vapor deposition. An entire electrode film 15 is formed on one side of the second dielectric 12.
is formed by printing, vapor deposition, or other methods. The other surface of the second dielectric 12 and one surface of the first dielectric 11, that is, the surface on which the center electrode film 13 is provided, are bonded together using glass glaze at a temperature of about 800.degree.
A plurality of center electrode films 13 may be provided as shown in FIG. 4, or the center electrode films 13 shown in FIGS. 2-3 and 4 may be stacked in multiple layers as shown in FIG. 5, for example.
以上の実施例からもあきらかなように、この発
明によると、片面に全面電極を設けた一対の誘電
体基板の他面間に中心電極を存在させて他面同士
をガラスグレーズで貼りつけたので、放射損失の
ない構造において、銅損の少ないたとえば銀のよ
うな電極を用いることができ、さらに特性を向上
させることができる。 As is clear from the above embodiments, according to the present invention, a center electrode is present between a pair of dielectric substrates each having a full-surface electrode on one side, and the other surfaces are bonded together with a glass glaze. In a structure without radiation loss, electrodes such as silver, which have low copper loss, can be used, and the characteristics can be further improved.
このような効果があるので、本発明は、たとえ
ば分岐器やフイルタに応用できるなど有益な発明
である。 Because of these effects, the present invention is a useful invention that can be applied to, for example, branching switches and filters.
第１図は、従来例の側面図、第２図は、本発明
一実施例の側面図、第３図は、同、分解斜視図、
第４図は、同、変形例の側面図、第５図は、同、
変形例の側面図である。
１１は第１の誘電体、１２は第２の誘電体、１
３は中心電極、１４，１５は全面電極。
FIG. 1 is a side view of a conventional example, FIG. 2 is a side view of an embodiment of the present invention, and FIG. 3 is an exploded perspective view of the same.
FIG. 4 is a side view of the same modification, and FIG. 5 is the same,
It is a side view of a modification. 11 is a first dielectric, 12 is a second dielectric, 1
3 is the center electrode, 14 and 15 are the entire surface electrodes.
Claims (1)
他面間に中心電極を存在させて他面同士をガラス
グレーズで貼りつけたことを特徴とする、ストリ
ツプラインの製造方法。1. A method for manufacturing a strip line, characterized in that a pair of dielectric substrates are provided with full-surface electrodes on one side, a center electrode is present between the other sides, and the other sides are pasted together with glass glaze.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11986581A JPS5820004A (en) | 1981-07-29 | 1981-07-29 | Production of strip line |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11986581A JPS5820004A (en) | 1981-07-29 | 1981-07-29 | Production of strip line |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5820004A JPS5820004A (en) | 1983-02-05 |
| JPS6332282B2 true JPS6332282B2 (en) | 1988-06-29 |
Family
ID=14772178
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11986581A Granted JPS5820004A (en) | 1981-07-29 | 1981-07-29 | Production of strip line |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5820004A (en) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS609302U (en) * | 1983-06-30 | 1985-01-22 | 株式会社東芝 | microwave integrated circuit |
| JPS6053302A (en) * | 1983-09-02 | 1985-03-27 | Matsushita Electric Ind Co Ltd | resonator |
| JPS60248005A (en) * | 1984-05-24 | 1985-12-07 | Fujitsu Ltd | Manufacture for triplate type circuit |
| JPH0414302A (en) * | 1990-05-08 | 1992-01-20 | Res Dev Corp Of Japan | Manufacture of superconducting microstrip line |
| JPH05299916A (en) * | 1992-04-21 | 1993-11-12 | Sumitomo Special Metals Co Ltd | Strip line resonator |
-
1981
- 1981-07-29 JP JP11986581A patent/JPS5820004A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5820004A (en) | 1983-02-05 |
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