JPS6326922B2 - - Google Patents
Info
- Publication number
- JPS6326922B2 JPS6326922B2 JP57090803A JP9080382A JPS6326922B2 JP S6326922 B2 JPS6326922 B2 JP S6326922B2 JP 57090803 A JP57090803 A JP 57090803A JP 9080382 A JP9080382 A JP 9080382A JP S6326922 B2 JPS6326922 B2 JP S6326922B2
- Authority
- JP
- Japan
- Prior art keywords
- dielectric
- manufacturing
- dielectric resonator
- substrate
- view
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P7/00—Resonators of the waveguide type
- H01P7/10—Dielectric resonators
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- Control Of Motors That Do Not Use Commutators (AREA)
Description
【発明の詳細な説明】
(a) 発明の技術分野
本発明は誘電体共振器の製造方法に係り、とく
に高周波帯の小形誘電体共振器の製造方法に関す
る。DETAILED DESCRIPTION OF THE INVENTION (a) Technical Field of the Invention The present invention relates to a method for manufacturing a dielectric resonator, and particularly to a method for manufacturing a small dielectric resonator in a high frequency band.
(b) 従来技術と問題点
従来周知の誘電体共振器は、小形でQが高く、
周波数安定度が良好なことからマイクロ波通信装
置に広く用いられている。(b) Conventional technology and problems Conventionally known dielectric resonators are small and have a high Q.
It is widely used in microwave communication equipment because of its good frequency stability.
上記従来の誘電体共振器は、第1図に示すよう
に通常は円板状で例えば直径5〜15mmであり、回
路基板であるセラミツク基板3上のストリツプラ
イン4との間に、スプリアスモードを少なくする
ために誘電率の小さな石英板2等を介在させて誘
電体共振器1を配設している。 As shown in FIG. 1, the conventional dielectric resonator described above is usually disk-shaped and has a diameter of 5 to 15 mm, for example, and has a spurious mode between it and a stripline 4 on a ceramic substrate 3, which is a circuit board. In order to reduce this, the dielectric resonator 1 is disposed with a quartz plate 2 or the like having a small dielectric constant interposed therebetween.
マイクロ波帯よりも高周波の準ミリ波、ミリ波
帯で使用される誘電体共振器はその形状がますま
す小さくなり、15GHz程度ともなると直径が4mm
乃至はそれ以下となる。このように周波数が高く
なるとQの低下もさることながら、誘電体共振器
の形状が小さくなり、円板状では製造が非常に困
難となり、作業能率が悪く、そのため高価になる
といつた問題点があつた。 Dielectric resonators used in the quasi-millimeter wave and millimeter wave bands, which are higher frequencies than the microwave band, are becoming smaller and smaller in shape, with a diameter of 4 mm at around 15 GHz.
or less. As the frequency increases, not only does the Q decrease, but the shape of the dielectric resonator also becomes smaller, making it extremely difficult to manufacture a disk-shaped resonator, resulting in lower work efficiency and higher costs. It was hot.
(c) 発明の目的
本発明の目的は、上記従来の問題点に鑑み、周
波数の高い領域、たとえばミリ波帯に対応する容
積の、角形誘電体共振器の安価な製造方法を提供
することにある。(c) Purpose of the Invention In view of the above-mentioned conventional problems, an object of the present invention is to provide an inexpensive manufacturing method for a rectangular dielectric resonator having a volume corresponding to a high frequency region, for example, a millimeter wave band. be.
(d) 発明の構成
前述の目的を達成するために、本発明は高誘電
率材でなる大形の誘電体基板の一面に低誘電率材
でなる誘電体を一体化形成し、上記誘電体基板を
所望の共振周波数帯に対応する容積となる方形に
切断するようにしたことによつて達成される。(d) Structure of the Invention In order to achieve the above-mentioned object, the present invention integrates a dielectric made of a low dielectric constant material onto one surface of a large dielectric substrate made of a high dielectric constant material, and This is achieved by cutting the substrate into a rectangular shape with a volume corresponding to the desired resonance frequency band.
(e) 発明の実施例
以下、図面を参照しながら本発明に係る誘電体
共振器の製造方法を実施例で詳細に説明する。(e) Embodiments of the Invention Hereinafter, a method for manufacturing a dielectric resonator according to the present invention will be explained in detail with reference to the drawings.
第2図は本発明方法の原理を説明するための斜
視図である。図において、高誘電率材料、たとえ
ば酸化ジルコニウム(ZnO2)、酸化チタン
(TiO2)等からなる大形の誘電体基板5を、所望
の周波数帯に対応する容積、たとえば15GHz帯で
は約4mm角となるように、図示しないダイヤモン
ドソウで切離し線6に沿つて碁盤目状に切離し、
方形の誘電体共振器51を多数個同時に得ること
が可能となり、作業性とともに能率が向上する。 FIG. 2 is a perspective view for explaining the principle of the method of the present invention. In the figure, a large dielectric substrate 5 made of a high dielectric constant material such as zirconium oxide (ZnO 2 ), titanium oxide (TiO 2 ), etc. is placed in a volume corresponding to a desired frequency band, for example, approximately 4 mm square in the 15 GHz band. Using a diamond saw (not shown), cut the pieces in a grid pattern along the cutting lines 6 so that
It becomes possible to obtain a large number of rectangular dielectric resonators 51 at the same time, improving workability and efficiency.
第3図は、本発明に係る誘電体共振器の製造方
法の第1の実施例を説明するための斜視図であ
る。第2図と同様な誘電体基板7、たとえば
ZrO2、TiO2等の一方の面に、スプリアスモード
を少なくするために低誘電率でかつ高周波損失の
少ない誘電体であるガラス8を融着し一体化形成
する。このように形成した大形の基板を、第2図
と同様な手段で所望の共振周波数帯に対応する容
積の形状に、切離し線6に沿つてガラス8を含ん
で切断して切離し、多数の誘電体共振器71を得
る。本実施例によれば一面にスプリアスモードを
減少させる低誘電体が一体に形成された誘電体共
振器が得られるので、極めて好都合である。 FIG. 3 is a perspective view for explaining the first embodiment of the method for manufacturing a dielectric resonator according to the present invention. A dielectric substrate 7 similar to that shown in FIG. 2, e.g.
Glass 8, which is a dielectric material with a low dielectric constant and low high frequency loss, is fused and integrated with one surface of ZrO 2 , TiO 2 , etc. in order to reduce spurious modes. The large substrate thus formed is cut into a volume shape corresponding to a desired resonant frequency band along the cutting line 6, including the glass 8, using the same method as shown in FIG. A dielectric resonator 71 is obtained. According to this embodiment, it is possible to obtain a dielectric resonator in which a low dielectric material that reduces spurious modes is integrally formed on one surface, which is extremely convenient.
第4図は、本発明に係る誘電体共振器の製造方
法の第2の実施例を説明するための斜視図であ
る。 FIG. 4 is a perspective view for explaining a second embodiment of the method for manufacturing a dielectric resonator according to the present invention.
第2図同様な誘電体基板9、例えばZrO2、
TiO2等の一方の面に、スプリアスモードを少な
くするために低誘電率でかつ高周波損失の少ない
誘電体板10、たとえばフオルステライト等をガ
ラス融着、または接着剤11等でもつて接合し一
体化形成する。このように形成した大形の基板
を、第2図と同様な手段で所望の共振周波数帯に
対応する容積の形状に、切離し線6に沿つて誘電
体板10とともに切離し、多数の誘電体共振器9
1を得る。 FIG. 2 A similar dielectric substrate 9, for example ZrO 2 ,
In order to reduce spurious modes, a dielectric plate 10 with a low dielectric constant and low high frequency loss, such as forstellite, is bonded to one surface of TiO 2 etc. by glass fusion or with an adhesive 11 etc. and integrated. Form. The thus formed large substrate is cut into a volume shape corresponding to a desired resonant frequency band along the cutting line 6 together with the dielectric plate 10 by the same means as shown in FIG. Vessel 9
Get 1.
以上のようにして得られた、予じめスプリアス
モードを少なくするためのガラス8、またはフオ
ルステライト10等の誘電体を有する誘電体共振
器71、または91を第5図に示す如くセラミツ
ク基板3の上に低誘電体面を介し直接に取付ける
ことができる。 A dielectric resonator 71 or 91 having a dielectric material such as glass 8 or forsterite 10 for reducing spurious modes obtained in the above manner is mounted on a ceramic substrate 3 as shown in FIG. It can be mounted directly on top of the low dielectric surface.
上記の、誘電体基板の切離し手段としては、ダ
イヤモンドソウに限らず、工業用レーザ等であつ
てもよく、切離し線についてもとくに要するもの
でなく、数値制御手段を備えた切断機械によつて
所望寸法に切断することが可能である。 The above-mentioned means for separating the dielectric substrate is not limited to a diamond saw, but may also be an industrial laser or the like, and a cutting line is not particularly required, and a cutting machine equipped with numerical control means may be used as desired. It is possible to cut to size.
(f) 発明の効果
以上の説明から明らかなように、本発明に係る
誘電体共振器の製造方法によれば、従来の個々に
製造する方法にくらべて、低誘電率の誘電体を一
体に有する誘電体共振器が一度に多数製造するこ
とが可能であり、作業能率が向上するとともに安
価となる。とくにミリ帯等の高周波帯での誘電体
共振器に適応して極めて有利である。(f) Effects of the Invention As is clear from the above explanation, according to the method for manufacturing a dielectric resonator according to the present invention, a dielectric material with a low permittivity can be integrated into one piece, compared to the conventional method of manufacturing them individually. A large number of dielectric resonators can be manufactured at the same time, improving work efficiency and reducing costs. It is particularly advantageous when applied to dielectric resonators in high frequency bands such as the millimeter band.
また、誘電体が一体化されて切断されることか
ら両者の平面視の寸法、形状が一致することにな
り、回路基板上への取付け時の位置決めが極めて
正確にして容易に行うことができる。 Further, since the dielectric is integrated and cut, the dimensions and shapes of the two in plan view match, and positioning when mounting on the circuit board can be performed extremely accurately and easily.
第1図は従来の誘電体共振器の実装例を説明す
るための斜視図、第2図は本発明に係る誘電体共
振器の製造方法の原理を説明するための斜視図、
第3図は本発明方法の第1の実施例を、第4図は
同じく第2の実施例をそれぞれ説明するための斜
視図、第5図は本発明によつて得られた誘電体共
振器の実装例斜視図である。
図において、1,51,71、および91は誘
電体共振器、2は石英板、3はセラミツク基板、
4はストリツプライン、5,7および9は誘電体
基板、6は切離し線、8はガラス、10は誘電体
板、11は接着剤、をそれぞれ示す。
FIG. 1 is a perspective view for explaining an example of mounting a conventional dielectric resonator, and FIG. 2 is a perspective view for explaining the principle of a method for manufacturing a dielectric resonator according to the present invention.
FIG. 3 is a perspective view of the first embodiment of the method of the present invention, FIG. 4 is a perspective view of the second embodiment, and FIG. 5 is a dielectric resonator obtained by the present invention. FIG. 2 is a perspective view of an example of implementation. In the figure, 1, 51, 71, and 91 are dielectric resonators, 2 is a quartz plate, 3 is a ceramic substrate,
4 is a strip line, 5, 7 and 9 are dielectric substrates, 6 is a separation line, 8 is glass, 10 is a dielectric plate, and 11 is an adhesive.
Claims (1)
低誘電率材でなる誘電体を一体化形成し、上記誘
電体基板を所望の共振周波数帯に対応する容積と
なる方形に切断するようにしたことを特徴とする
誘電体共振器の製造方法。1. A dielectric made of a low dielectric constant material is integrally formed on one surface of a large dielectric substrate made of a high dielectric constant material, and the dielectric substrate is cut into a rectangular shape having a volume corresponding to a desired resonance frequency band. A method for manufacturing a dielectric resonator, characterized in that:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9080382A JPS58206203A (en) | 1982-05-27 | 1982-05-27 | Production of dielectric resonator |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9080382A JPS58206203A (en) | 1982-05-27 | 1982-05-27 | Production of dielectric resonator |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58206203A JPS58206203A (en) | 1983-12-01 |
| JPS6326922B2 true JPS6326922B2 (en) | 1988-06-01 |
Family
ID=14008743
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9080382A Granted JPS58206203A (en) | 1982-05-27 | 1982-05-27 | Production of dielectric resonator |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58206203A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6170801A (en) * | 1984-09-14 | 1986-04-11 | Fujitsu Ltd | Method for constituting dielectric filter |
| JPS61212101A (en) * | 1985-03-15 | 1986-09-20 | Murata Mfg Co Ltd | Dielectric resonator |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CA1155870A (en) * | 1979-09-07 | 1983-10-25 | Ignatius Schumacher | Nitration of holobenzenes |
-
1982
- 1982-05-27 JP JP9080382A patent/JPS58206203A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58206203A (en) | 1983-12-01 |
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