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JPS6327810B2 - - Google Patents
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JPS6327810B2 - - Google Patents

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Publication number
JPS6327810B2
JPS6327810B2 JP12295382A JP12295382A JPS6327810B2 JP S6327810 B2 JPS6327810 B2 JP S6327810B2 JP 12295382 A JP12295382 A JP 12295382A JP 12295382 A JP12295382 A JP 12295382A JP S6327810 B2 JPS6327810 B2 JP S6327810B2
Authority
JP
Japan
Prior art keywords
shield
fixed
end plate
container
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP12295382A
Other languages
Japanese (ja)
Other versions
JPS5914228A (en
Inventor
Satoru Shioiri
Iwao Ooshima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP12295382A priority Critical patent/JPS5914228A/en
Publication of JPS5914228A publication Critical patent/JPS5914228A/en
Publication of JPS6327810B2 publication Critical patent/JPS6327810B2/ja
Granted legal-status Critical Current

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Description

【発明の詳細な説明】 〔発明の技術分野〕 本発明は真空バルブに係り、耐電圧特性の向上
をはかつた真空バルブに関する。
DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a vacuum valve, and more particularly, to a vacuum valve with improved withstand voltage characteristics.

〔背景技術とその問題点〕[Background technology and its problems]

真空バルブのシールドは、電流しや断時に電極
間で発生するアークが直接絶縁容器に触れるのを
防止し、かつ金属蒸気が絶縁容器の内面に付着す
るのを防止するうえで大きな役割をしている。
The shield of a vacuum valve plays a major role in preventing the arc generated between the electrodes from directly touching the insulating container when the current is interrupted, and also in preventing metal vapor from adhering to the inner surface of the insulating container. There is.

しかし、放電がシールドから絶縁容器を介した
沿面放電を生じるために、真空バルブのユニツト
電圧の向上をさまたげている。
However, since the discharge causes a creeping discharge from the shield through the insulating container, improvement of the unit voltage of the vacuum bulb is hindered.

従来の真空バルブは、第1図に示すように絶縁
筒1aを軸方向に2個並設してなる絶縁容器1の
両端に夫々端板2,3を設けて内部を真空にした
真空容器を形成している。そして固定電極4は端
板2を気密に貫通する通電軸4aに接触子4bを
有する電極4cを設けている。また、可動電極5
は端板3にベローズ6を介して可動に密封された
通電軸5aに接触子5bを有する電極5cを設け
ている。そして、固定電極側に金属製の固定シー
ルド7aを、真空容器の中間に金属製の中間シー
ルド8を、可動側には金属製の固定シールド7b
を設けている。このようなシールド7,8は電流
しや断時に電極4,5間で発生する金属蒸気が絶
縁容器1の内壁に付着するのを防止するために大
きな役割を果している。しかしながら、この金属
製の固定シールド7と中間シールド8との近くに
絶縁筒1aがあるため破壊電圧が低下する。これ
は、第2図に示すように可動側について考える
と、中間シールド8に電界が加わると可動側の固
定シールド7が陰極となつて放出された電子e
は、絶縁筒1aに衝突して2次電子を放出する。
この時の衝突エネルギーと2次電子放出効率δ(E)
との関係は第3図に示す特性曲線δ(E)となる。第
3図において縦軸は2次電子放出効率δ(E)、横軸
は電子の衝突エネルギーE〔eV〕を示している。
この曲線δ(E)に従つて絶縁筒1aには正の電荷が
蓄積される。この絶縁筒1aから放出された電子
は2次電子なだれによつて電子増殖し、ついには
絶縁破壊にいたる。したがつて、比較的低電圧で
電子なだれによる前駆破壊電流が流れこの結果、
破壊電圧は低くなつてしまう。一方、近年真空バ
ルブを用いる回路の高電圧化が著るしく進み、高
電圧で安定に用い得る真空バルブの出現が望まれ
ている。
As shown in FIG. 1, a conventional vacuum valve has a vacuum container in which end plates 2 and 3 are provided at both ends of an insulating container 1, which is made up of two insulating cylinders 1a arranged side by side in the axial direction, and the inside is evacuated. is forming. The fixed electrode 4 is provided with an electrode 4c having a contact 4b on a current-carrying shaft 4a that passes through the end plate 2 in an airtight manner. In addition, the movable electrode 5
An electrode 5c having a contactor 5b is provided on the end plate 3 via a bellows 6 and movably sealed to a current-carrying shaft 5a. A metal fixed shield 7a is placed on the fixed electrode side, a metal intermediate shield 8 is placed in the middle of the vacuum container, and a metal fixed shield 7b is placed on the movable side.
has been established. These shields 7 and 8 play a major role in preventing metal vapor generated between the electrodes 4 and 5 from adhering to the inner wall of the insulating container 1 when the current is interrupted. However, since the insulating cylinder 1a is located near the metal fixed shield 7 and intermediate shield 8, the breakdown voltage is reduced. Considering the movable side as shown in FIG. 2, when an electric field is applied to the intermediate shield 8, the fixed shield 7 on the movable side becomes a cathode and the electrons e are emitted.
collides with the insulating cylinder 1a and emits secondary electrons.
Collision energy and secondary electron emission efficiency δ(E) at this time
The relationship with is the characteristic curve δ(E) shown in FIG. In FIG. 3, the vertical axis shows the secondary electron emission efficiency δ(E), and the horizontal axis shows the electron collision energy E [eV].
Positive charges are accumulated in the insulating cylinder 1a according to this curve δ(E). The electrons emitted from the insulating cylinder 1a multiply by a secondary electron avalanche, eventually leading to dielectric breakdown. Therefore, a precursor breakdown current due to electron avalanche flows at a relatively low voltage, and as a result,
Breakdown voltage becomes low. On the other hand, in recent years, the voltage of circuits using vacuum valves has significantly increased, and there is a desire for a vacuum valve that can be used stably at high voltage.

〔発明の目的〕[Purpose of the invention]

本発明は、上記の点にかんがみてなされたもの
で、高電圧化に適した真空バルブを提供すること
を目的とするものである。
The present invention has been made in view of the above points, and an object of the present invention is to provide a vacuum valve suitable for high voltage applications.

〔発明の概要〕[Summary of the invention]

かかる目的を達成するために本発明によれば、
中間シールド及び固定シールドをセラミツクスで
形成し、このシールド内面に導電層又は半導電層
を形成したものである。
According to the present invention, in order to achieve such an objective,
The intermediate shield and fixed shield are formed of ceramics, and a conductive layer or a semiconductive layer is formed on the inner surface of the shield.

〔発明の実施例〕[Embodiments of the invention]

以下、本発明の一実施例を第4図を参照して詳
細に説明する。
Hereinafter, one embodiment of the present invention will be described in detail with reference to FIG.

なお、第1図と同一部分は同一符号を付してそ
の説明を省略する。第4図に示すように絶縁筒1
aを軸方向に2個並設した絶縁容器1の両端にそ
れぞれ端板2,3を封着して真空容器を形成し、
固定電極4は端板2を貫通して封着された通電軸
4aの先端に接触子4bを備えた電極4cを設け
ている。また可動電極5は端板3にカバー6aを
有するベローズ6を介して可動に封着された通電
軸5aの先端に接触子5bを備えた電極5cが設
けられている。固定電極側端板2及び可動電極側
端板3にはそれぞれセラミツクスで形成される固
定シールド91,92を設け、真空容器の中間に
アルミナAl2O3配合比が98%以上のセラミツクス
で形成される中間シールド10を設けている。そ
れぞれの固定シールド91,92や中間シールド
10の内面には、抵抗率1〜100μΩ・cmの導電
層又は半導電層9a,10aを塗布あるいは蒸着
により形成している。
Note that the same parts as in FIG. 1 are designated by the same reference numerals, and the explanation thereof will be omitted. As shown in Figure 4, the insulation tube 1
A vacuum container is formed by sealing end plates 2 and 3 to both ends of an insulating container 1 in which two A are arranged side by side in the axial direction,
The fixed electrode 4 has an electrode 4c provided with a contact 4b at the tip of a current-carrying shaft 4a that passes through the end plate 2 and is sealed. The movable electrode 5 is provided with an electrode 5c having a contact 5b at the tip of an energizing shaft 5a which is movably sealed to the end plate 3 via a bellows 6 having a cover 6a. Fixed electrode side end plate 2 and movable electrode side end plate 3 are provided with fixed shields 91 and 92 made of ceramics, respectively, and a shield made of ceramics with an alumina Al 2 O 3 blending ratio of 98% or more is provided in the middle of the vacuum container. An intermediate shield 10 is provided. On the inner surface of each fixed shield 91, 92 and intermediate shield 10, a conductive layer or semiconductive layer 9a, 10a having a resistivity of 1 to 100 μΩ·cm is formed by coating or vapor deposition.

〔発明の作用〕[Action of the invention]

中間シールド10の内面に蒸着された導電層1
0aと固定シールド91,92の内面に蒸着され
た金属層9aとの間の破壊は、金属層9a,10
aがセラミツクスで被覆されるため、導電層9
a,10aからの放射電流が抑制される。これに
より絶縁容器1aの内面での2次電子なだれが抑
制され、破壊電圧が高くなる。
Conductive layer 1 deposited on the inner surface of intermediate shield 10
0a and the metal layer 9a deposited on the inner surface of the fixed shields 91, 92, the metal layer 9a, 10
Since a is covered with ceramics, the conductive layer 9
The radiation current from a and 10a is suppressed. This suppresses secondary electron avalanche on the inner surface of the insulating container 1a, increasing the breakdown voltage.

この前駆破壊電流と印加電圧との関係を第5図
に示す。同図において、縦軸は前駆破壊電流を示
し、横軸は印加電圧を示している。曲線Iaは、絶
縁部材を被覆しない場合であり、曲線Ibはセラミ
ツクス内面を導電被覆した場合である。この前駆
破壊電流が所定の限界Icに達したとき絶縁破壊と
なる。この前駆破壊電流が抑制されるため絶縁破
壊電圧が向上する。このようにセラミツクスの内
面の導電層9a,10aの電界強度を高くするこ
とができる。
The relationship between this precursor breakdown current and the applied voltage is shown in FIG. In the figure, the vertical axis shows the precursor breakdown current, and the horizontal axis shows the applied voltage. Curve I a is the case where the insulating member is not coated, and curve I b is the case where the inner surface of the ceramic is electrically conductive coated. Dielectric breakdown occurs when this precursor breakdown current reaches a predetermined limit Ic . Since this precursor breakdown current is suppressed, the dielectric breakdown voltage is improved. In this way, the electric field strength of the conductive layers 9a and 10a on the inner surface of the ceramic can be increased.

また、電極4a,4c間で発生したアークが中
間シールド10の導電層10aに触れて導電層1
0aの温度が上昇する。中間シールド10のセラ
ミツクスはアルミナ(Al2O3)の配合比が98%以
上であるため耐熱性にすぐれている。アークによ
り導電層10aの温度が上昇しても、溶融するこ
とはない。セラミツクスで形成されたシールドの
厚さは、絶縁階級に応じて種々選択する。セラミ
ツクスの内面の材料は、かならずしも導電層でな
くてもよく、絶縁容器1aの封着部の電界を低く
するためには、半導電性の材料でもよい。
Further, the arc generated between the electrodes 4a and 4c touches the conductive layer 10a of the intermediate shield 10, and the conductive layer 1
The temperature of 0a increases. The ceramic of the intermediate shield 10 has a blending ratio of alumina (Al 2 O 3 ) of 98% or more, so it has excellent heat resistance. Even if the temperature of the conductive layer 10a increases due to the arc, it will not melt. The thickness of the shield made of ceramics is selected depending on the insulation class. The material for the inner surface of the ceramics does not necessarily have to be a conductive layer, and may be a semiconductive material in order to lower the electric field at the sealed portion of the insulating container 1a.

このような構成とすれば、真空容器の容積を小
さくできるため、大幅なコストダウンを図ること
ができる。
With such a configuration, the volume of the vacuum container can be reduced, resulting in significant cost reductions.

また、中間シールド10及び固定シールド9
1,92のギヤツプ長を短かくできるため、電流
しや断時に電極4,5間から発生する金属蒸気が
絶縁筒の内面に付着することを防止できそれによ
つて、大電流しや断時に金属蒸気が絶縁容器1a
の内面に付着することによる耐圧低下を防止する
ことができる。
In addition, an intermediate shield 10 and a fixed shield 9
Since the gap length of 1 and 92 can be shortened, it is possible to prevent the metal vapor generated between the electrodes 4 and 5 from adhering to the inner surface of the insulating cylinder when the current is interrupted. The steam is insulated container 1a
It is possible to prevent a drop in pressure resistance due to adhesion to the inner surface of the surface.

〔総合的な効果〕[Overall effect]

以上詳述したように本発明によれば、中間シー
ルド及び固定シールドをセラミツクスで形成し、
このセラミツクスの内面に導電層又は半導電層を
蒸着あるいは塗布する事により形成したので、両
シールド間の沿面耐圧を向上し、全体の形状を小
型化して大幅なコストダウンを図ることができ、
高電圧,大容量に適する真空バルブを提供する事
ができる。
As detailed above, according to the present invention, the intermediate shield and the fixed shield are formed of ceramics,
Since a conductive layer or a semiconductive layer is formed by vapor deposition or coating on the inner surface of this ceramic, it is possible to improve the creepage withstand voltage between both shields, reduce the overall size, and significantly reduce costs.
We can provide vacuum valves suitable for high voltage and large capacity.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は、従来の真空バルブを示す縦断面図、
第2図は従来の真空バルブの中間シールドと固定
シールドの要部を示す断面図、第3図は、2次電
子放出特性を示す特性線図、第4図は、本発明の
真空バルブを示す縦断面図、第5図は印加電圧と
前駆破壊電流との関係を示す特性線図である。 1a……絶縁筒、1……絶縁容器、2,3……
端板、4……固定電極、5……可動電極、6……
ベローズ、9a,10a……導電層又は半導電
層、10……シールド、91,92……固定シー
ルド。
FIG. 1 is a longitudinal sectional view showing a conventional vacuum valve;
Fig. 2 is a cross-sectional view showing the main parts of the intermediate shield and fixed shield of a conventional vacuum valve, Fig. 3 is a characteristic diagram showing secondary electron emission characteristics, and Fig. 4 shows the vacuum valve of the present invention. The vertical cross-sectional view and FIG. 5 are characteristic diagrams showing the relationship between applied voltage and precursor breakdown current. 1a... Insulating cylinder, 1... Insulating container, 2, 3...
End plate, 4... Fixed electrode, 5... Movable electrode, 6...
Bellows, 9a, 10a...conductive layer or semiconductive layer, 10...shield, 91, 92...fixed shield.

Claims (1)

【特許請求の範囲】[Claims] 1 絶縁容器とこの絶縁容器を閉塞する端板とか
らなる真空容器内に接離可能な一対の電極を配置
しこの一対の電極の少なくとも一方がベローズを
介して前記端板に可動に封着されるとともに上記
端板に支持される固定シールドを配置しさらに上
記電極を包囲する中間シールドを備えた真空バル
ブにおいて、前記中間シールドと前記固定シール
ドをアルミナ(Al2O3)配合比98%以上のセラミ
ツクスで形成し、前記中間シールドと固定シール
ドの内面に抵抗率1〜100μΩ・cmの導電層又は
半導電層を施こした事を特徴とする真空バルブ。
1 A pair of electrodes that can be moved into and out of contact with each other is arranged in a vacuum container consisting of an insulating container and an end plate that closes the insulating container, and at least one of the pair of electrodes is movably sealed to the end plate via a bellows. and a fixed shield supported by the end plate, and an intermediate shield surrounding the electrode, wherein the intermediate shield and the fixed shield are made of alumina (Al 2 O 3 ) with a blending ratio of 98% or more. A vacuum valve characterized in that it is made of ceramics and has a conductive or semiconductive layer having a resistivity of 1 to 100 μΩ·cm on the inner surfaces of the intermediate shield and the fixed shield.
JP12295382A 1982-07-16 1982-07-16 Vacuum bulb Granted JPS5914228A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12295382A JPS5914228A (en) 1982-07-16 1982-07-16 Vacuum bulb

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12295382A JPS5914228A (en) 1982-07-16 1982-07-16 Vacuum bulb

Publications (2)

Publication Number Publication Date
JPS5914228A JPS5914228A (en) 1984-01-25
JPS6327810B2 true JPS6327810B2 (en) 1988-06-06

Family

ID=14848705

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12295382A Granted JPS5914228A (en) 1982-07-16 1982-07-16 Vacuum bulb

Country Status (1)

Country Link
JP (1) JPS5914228A (en)

Also Published As

Publication number Publication date
JPS5914228A (en) 1984-01-25

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