JPS6334555B2 - - Google Patents
Info
- Publication number
- JPS6334555B2 JPS6334555B2 JP2986581A JP2986581A JPS6334555B2 JP S6334555 B2 JPS6334555 B2 JP S6334555B2 JP 2986581 A JP2986581 A JP 2986581A JP 2986581 A JP2986581 A JP 2986581A JP S6334555 B2 JPS6334555 B2 JP S6334555B2
- Authority
- JP
- Japan
- Prior art keywords
- magnetic bubble
- magnetic
- conductor pattern
- gate
- bubble memory
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000005291 magnetic effect Effects 0.000 claims description 50
- 239000004020 conductor Substances 0.000 claims description 27
- 239000011229 interlayer Substances 0.000 claims description 4
- 239000010410 layer Substances 0.000 claims description 4
- 239000012634 fragment Substances 0.000 description 11
- 230000007257 malfunction Effects 0.000 description 6
- 239000010409 thin film Substances 0.000 description 5
- 229910018182 Al—Cu Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005294 ferromagnetic effect Effects 0.000 description 1
- 239000003302 ferromagnetic material Substances 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910000889 permalloy Inorganic materials 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
- G11C19/02—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements
- G11C19/08—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure
- G11C19/0875—Organisation of a plurality of magnetic shift registers
- G11C19/0883—Means for switching magnetic domains from one path into another path, i.e. transfer switches, swap gates or decoders
Description
【発明の詳細な説明】
本発明は磁気バブルメモリ素子、特に磁気バブ
ルの転送特性を向上させた磁気バブルメモリ素子
に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a magnetic bubble memory device, and particularly to a magnetic bubble memory device with improved magnetic bubble transfer characteristics.
一般に軟強磁性体薄膜により形成された微細パ
ターンを所定形状に配列して磁気バブル転送回路
を構成し、これらの転送回路上に非磁性導体薄膜
で形成されたヘアピン状の導体パターンからなる
ゲートに所定のゲート電流を流すことによつて磁
気バブルを制御する磁気バブルメモリ素子は、そ
の動作上、ゲートに流すパルス電流が適切な波形
に整形されていないと、磁気バブルの転送が誤動
作を発生する。特に素子が高密度化して転送パタ
ーンが微細化されるにともなつて、磁気バブルが
ゲート部に流れる電流により生ずる不適当な磁界
の影響を受け、誤動作を起しやすくなる。また、
微細パターン形成の際、マスク合わせの差異によ
り各素子毎に上記誤動作の程度が異なつてくる。 Generally, a magnetic bubble transfer circuit is constructed by arranging fine patterns made of soft ferromagnetic thin films in a predetermined shape, and a gate consisting of a hairpin-shaped conductive pattern made of a non-magnetic conductive thin film is placed on top of these transfer circuits. A magnetic bubble memory device that controls magnetic bubbles by flowing a predetermined gate current will cause malfunctions in the transfer of magnetic bubbles if the pulse current flowing through the gate is not shaped into an appropriate waveform. . In particular, as devices become denser and transfer patterns become finer, magnetic bubbles are more likely to malfunction due to the influence of inappropriate magnetic fields generated by current flowing through the gate portion. Also,
When forming fine patterns, the degree of malfunction described above differs for each element due to differences in mask alignment.
第１図は従来の磁気バブルメモリ素子のゲート
部で発生する誤動作の様子を説明する要部拡大平
面図である。同図において、１，２，３，４，
５，６，７，８はパーマロイ等の軟強磁性体の薄
膜により形成された微細パターンを所定形状に配
列させて磁気バブル転送回路９，１０を構成する
転送回路素片であり、これらの転送回路９，１１
０の下部側には図示しない層間絶縁膜を介して
Al―Cu、Au―Cr等の非磁性導体の薄膜により形
成されて所定のゲート電流I1を流すことによつて
上記各素片１〜８上の磁気バブルＢを制御する導
体パターン１１が形成され、この導体パターン１
１のヘアピン部１１ａ，１１ｂは上記転送回路
９，１０に交差して形成配置されてゲート部が構
成されている。 FIG. 1 is an enlarged plan view of a main part illustrating a malfunction occurring in a gate portion of a conventional magnetic bubble memory element. In the same figure, 1, 2, 3, 4,
Reference numerals 5, 6, 7, and 8 are transfer circuit elements that constitute magnetic bubble transfer circuits 9 and 10 by arranging fine patterns formed of thin films of soft ferromagnetic material such as permalloy in a predetermined shape. circuits 9, 11
0 through an interlayer insulating film (not shown).
A conductor pattern 11 is formed of a thin film of a non-magnetic conductor such as Al-Cu, Au-Cr, etc., and controls the magnetic bubbles B on each of the above-mentioned pieces 1 to 8 by flowing a predetermined gate current I1. and this conductor pattern 1
The first hairpin portions 11a and 11b are arranged to cross the transfer circuits 9 and 10 to form a gate portion.
このような構成において、これらの転送回路
９，１０には図示しない面内回転磁界が印加され
て磁気バブルＢが各素片１〜８を矢印Ｐ方向に転
送されることになる。 In such a configuration, an in-plane rotating magnetic field (not shown) is applied to these transfer circuits 9 and 10, and the magnetic bubbles B are transferred to each of the pieces 1 to 8 in the direction of arrow P.
しかしながら、上記構成において、何等かの動
作条件の変動（バラツキ）等により、導体パター
ン１１に流すゲート電流I1の電流値が増大した場
合、導体パターンヘアピン部１１ａと１１ｂとで
囲まれる領域、特に素片６，８に不適当な磁界分
布が発生し、磁気バブルＢの正常な転送動作、つ
まり磁気バブル素片１から素片２へ、また素片４
から素片５へ、さらに素片７から素片５へと実線
で示す矢印方向へ転送されず、磁気バブルＢが素
片４から素片８へ、また素片７から素片６へと点
線で示す矢印方向へ転送されて誤動作を発生させ
ていた。換言すれば、従来の磁気バブルメモリ素
子は、導体パターン１１に流すゲート電流I1によ
つて生じる不適当な発生磁界の影響を受けやすい
という欠点があつた。 However, in the above configuration, if the current value of the gate current I1 flowing through the conductor pattern 11 increases due to some variation in operating conditions, etc., the area surrounded by the conductor pattern hairpin parts 11a and 11b, especially An inappropriate magnetic field distribution occurs in the fragments 6 and 8, which prevents the normal transfer operation of the magnetic bubble B from the magnetic bubble fragment 1 to the fragment 2, and vice versa.
The magnetic bubble B is not transferred from Fragment 5 to Fragment 5, and from Fragment 7 to Fragment 5 in the direction of the arrow shown by the solid line, but from Fragment 4 to Fragment 8, and from Fragment 7 to Fragment 6 as shown by the dotted line. The data was transferred in the direction of the arrow shown, causing a malfunction. In other words, the conventional magnetic bubble memory element has the disadvantage that it is susceptible to the influence of an inappropriate magnetic field generated by the gate current I1 flowing through the conductor pattern 11.
したがつて本発明は、転送回路の導体パターン
ヘアピン部で囲まれる領域に不適当な磁界発生を
防止する導体パターンからなるゲートを設けるこ
とによつて、電流特性の優れた磁気バブルメモリ
素子を提供することを目的としている。 Therefore, the present invention provides a magnetic bubble memory element with excellent current characteristics by providing a gate made of a conductive pattern that prevents generation of an inappropriate magnetic field in a region surrounded by the conductive pattern hairpin portion of a transfer circuit. It is intended to.
以下図面を用いて本発明の実施例を詳細に説明
する。 Embodiments of the present invention will be described in detail below with reference to the drawings.
第２図は本発明による磁気バブルメモリ素子の
一例を説明するための第１図に相当する要部拡大
平面図であり、第１図と同記号は同一要素となる
のでその説明は省略する。第２図において、磁気
バブルＢ制御用導体パターン１１および転送回路
９，１０の上部には、図示しない層間絶縁層を介
してAl―Cu、Au―Cr等の非磁性導体薄膜からな
る他の導体パターン１２が形成されている。そし
て、この導体パターン１２のヘアピン部１２ａ，
１２ｂは、前記不適当な磁界分布が発生する導体
パターンヘアピン部１１ａと１１ｂ間の領域に延
在して形成されて各素片上の磁気バブルＢが所定
の素片に転送自在となるようにヘアピン部１２
ａ，１２ｂのパターン部で覆われ、かつ中央部分
には素片上の磁気バブルＢが不要な素片への転送
を遮蔽するための隙間１２a′，１２b′が形成され
ている。 FIG. 2 is an enlarged plan view of a main part corresponding to FIG. 1 for explaining an example of the magnetic bubble memory element according to the present invention, and since the same symbols as in FIG. 1 are the same elements, the explanation thereof will be omitted. In FIG. 2, on top of the magnetic bubble B control conductor pattern 11 and the transfer circuits 9 and 10, another conductor made of a non-magnetic conductor thin film such as Al-Cu, Au-Cr, etc. is connected via an interlayer insulating layer (not shown). A pattern 12 is formed. The hairpin portion 12a of this conductor pattern 12,
12b is a hairpin extending in the area between the conductor pattern hairpin parts 11a and 11b where the inappropriate magnetic field distribution occurs, so that the magnetic bubble B on each element can be freely transferred to a predetermined element. Part 12
Gaps 12a' and 12b' are formed in the central portion of the pattern portions a and 12b to block the transfer of magnetic bubbles B on the element pieces to unnecessary elements.
このような構成において、素片１上の磁気バブ
ルＢが素片２へ、また素片４上の磁気バブルＢが
素片５へ、さらに素片７上の磁気バブルＢが素片
５へそれぞれ回転磁界により移動するときに導体
パターン１２に矢印方向にパルス電流I2を流すこ
とによつて、ヘアピン部１２ａ，１２ｂの隙間１
２a′，１２b′内には、図示しないバイアス磁界が
強められることになり、したがつて、これらの磁
気バブルＢは隙間１２a′，１２b′内を移動するこ
とができなくなり、それぞれ対応する所定の素片
２，５上にスムーズに転送されることになる。こ
の場合、導体パターン１２に流すパルス電流I2の
流入方向および位相は、隙間１２a′，１２b′内の
バイアス磁界の強さが大きくなるように適宜選定
すれば良い。またこの導体パターン１２に流すパ
ルス電流I2を下部側の導体パターン１１に供給す
るゲート電流I1と同一電流を用いてもよい。 In such a configuration, the magnetic bubble B on the elemental piece 1 goes to the elemental piece 2, the magnetic bubble B on the elemental piece 4 goes to the elemental piece 5, and the magnetic bubble B on the elemental piece 7 goes to the elemental piece 5. By passing a pulse current I2 in the direction of the arrow through the conductor pattern 12 when it moves due to a rotating magnetic field, the gap 1 between the hairpin portions 12a and 12b is
A bias magnetic field (not shown) is strengthened in the gaps 2a' and 12b', so that these magnetic bubbles B cannot move in the gaps 12a' and 12b', and the magnetic bubbles B cannot move within the gaps 12a' and 12b', respectively. It will be smoothly transferred onto the elementary pieces 2 and 5. In this case, the inflow direction and phase of the pulse current I 2 flowing through the conductive pattern 12 may be appropriately selected so that the strength of the bias magnetic field within the gaps 12a' and 12b' becomes large. Further, the pulse current I 2 flowing through the conductor pattern 12 may be the same as the gate current I 1 supplied to the lower conductor pattern 11 .
このような構成によれば、下部側の導体パター
ン１１のゲート電流I1が増大してヘアピン部１１
ａと１１ｂとで囲まれる領域に不適当な磁界が発
生しても、素片１，４，７上の磁気バブルＢは、
上部に形成された導体パターンヘアピン部１２
ａ，１２ｂの隙間１２a′，１２b′内のバイアス磁
界によつ移動方向が所定の素片２，５方向に規正
されるこになり、したがつてゲート電流I1が増大
しても誤動作の発生が生じにくくなり、ゲート部
の電流特性が大幅に向上させることができた。 According to such a configuration, the gate current I 1 of the lower conductor pattern 11 increases and the hairpin portion 11
Even if an inappropriate magnetic field is generated in the region surrounded by a and 11b, the magnetic bubbles B on the pieces 1, 4, and 7 will
Conductor pattern hairpin portion 12 formed on the top
The bias magnetic field in the gaps 12a' and 12b' between a and 12b regulates the moving direction in the direction of the predetermined pieces 2 and 5, so even if the gate current I1 increases, malfunction will not occur. The occurrence of this phenomenon became less likely, and the current characteristics of the gate section were significantly improved.
なお、最上部に設けた導体パターン１２は最下
部に設けられている導体パターン１１とは層間に
おいて電気的に相互に絶縁されており、最上部の
導体パターン１２を図示しないボンデイングパツ
ドを形成する導体層を用いて形成することができ
る。また、最上部に設けた導体パターン１２に供
給するパルス電流I2と最下部に設けられた導体パ
ターン１１に供給するゲート電流I1とをその電流
の流れ方向および位相を同一とすることが可能で
あり、その電流の大きさも配線抵抗を適宜設計す
ることによつて、適度の電流を供給することが可
能である。このため、両者を並列接続してボンデ
イングパツド数を増加させることなく、同一の駆
動方法を利用できるという極めて優れた効果を有
している。 Note that the conductor pattern 12 provided at the top is electrically insulated from the conductor pattern 11 provided at the bottom in the interlayer, and the conductor pattern 12 at the top forms a bonding pad (not shown). It can be formed using a conductor layer. Furthermore, it is possible to make the current flow direction and phase of the pulse current I 2 supplied to the conductor pattern 12 provided at the top and the gate current I 1 supplied to the conductor pattern 11 provided at the bottom the same. By appropriately designing the wiring resistance, it is possible to supply an appropriate amount of current. Therefore, it has an extremely excellent effect that the same driving method can be used without increasing the number of bonding pads by connecting both in parallel.
以上説明したように本発明によれば、ゲート部
のパルス電流に対する特性が良好となり、量産性
の優れた磁気バブルメモリ素子を提供することが
できるという極めて優れた効果が得られる。 As explained above, according to the present invention, the characteristics of the gate portion against pulse current are improved, and an extremely excellent effect can be obtained in that a magnetic bubble memory element with excellent mass productivity can be provided.
第１図は従来の磁気バブルメモリ素子のゲート
部の一例を示す要部拡大平面図、第２図は本発明
による磁気バブルメモリ素子のゲート部の一例を
示す要部拡大平面図である。
１〜８…素片、９，１０…転送回路、１１…導
体パターン、１１ａ，１１ｂ…ヘアピン部、１２
…導体パターン、１２ａ，１２ｂ…ヘアピン部、
１２a′，１２b′…隙間。
FIG. 1 is an enlarged plan view of a main part showing an example of a gate part of a conventional magnetic bubble memory element, and FIG. 2 is an enlarged plan view of a main part showing an example of a gate part of a magnetic bubble memory element according to the present invention. 1-8... Elemental piece, 9, 10... Transfer circuit, 11... Conductor pattern, 11a, 11b... Hairpin part, 12
...conductor pattern, 12a, 12b...hairpin part,
12a', 12b'...Gap.
Claims (1)
介して導体パターンからなるゲート部が形成され
た磁気バブルメモリ素子において、前記磁気バブ
ル転送回路の上部側に前記磁気バブルの転送方向
を規正するゲート部を設けたことを特徴とする磁
気バブルメモリ素子。 ２ 前記上部側ゲート部の導体パターンを、ボン
デイングパツドを形成する導体層と同一層上に設
けたことを特徴とする特許請求の範囲第１項記載
の磁気バブルメモリ素子。 ３ 前記上部側ゲート部と下部側ゲート部とを並
列に接続したことを特徴とする特許請求の範囲第
２項記載の磁気バブルメモリ素子。[Scope of Claims] 1. In a magnetic bubble memory element in which a gate portion made of a conductor pattern is formed on the lower side of the magnetic bubble transfer circuit via an interlayer insulating film, the magnetic bubble A magnetic bubble memory element characterized by being provided with a gate section that regulates a transfer direction. 2. The magnetic bubble memory device according to claim 1, wherein the conductor pattern of the upper gate portion is provided on the same layer as the conductor layer forming the bonding pad. 3. The magnetic bubble memory device according to claim 2, wherein the upper gate portion and the lower gate portion are connected in parallel.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2986581A JPS57147185A (en) | 1981-03-04 | 1981-03-04 | Magnetic bubble memory element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2986581A JPS57147185A (en) | 1981-03-04 | 1981-03-04 | Magnetic bubble memory element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57147185A JPS57147185A (en) | 1982-09-10 |
| JPS6334555B2 true JPS6334555B2 (en) | 1988-07-11 |
Family
ID=12287862
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2986581A Granted JPS57147185A (en) | 1981-03-04 | 1981-03-04 | Magnetic bubble memory element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57147185A (en) |
-
1981
- 1981-03-04 JP JP2986581A patent/JPS57147185A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS57147185A (en) | 1982-09-10 |
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