JPS6335083B2 - - Google Patents
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- Publication number
- JPS6335083B2 JPS6335083B2 JP56182849A JP18284981A JPS6335083B2 JP S6335083 B2 JPS6335083 B2 JP S6335083B2 JP 56182849 A JP56182849 A JP 56182849A JP 18284981 A JP18284981 A JP 18284981A JP S6335083 B2 JPS6335083 B2 JP S6335083B2
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- semiconductor ceramic
- barium titanate
- alloy
- resistance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
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- Details Of Resistors (AREA)
- Thermistors And Varistors (AREA)
- Conductive Materials (AREA)
Description
【発明の詳細な説明】
この発明はチタン酸バリウム系半導体磁器の表
面に形成されるオーム性電極の構成に関するもの
である。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to the structure of an ohmic electrode formed on the surface of barium titanate semiconductor ceramic.
チタン酸バリウム系半導体磁器素子は正の抵抗
温度特性を有する抵抗体として知られており、ま
たその表面にはオーム性接触を示す電極が形成さ
れることも知られている。 Barium titanate-based semiconductor ceramic elements are known as resistors having positive resistance-temperature characteristics, and it is also known that electrodes exhibiting ohmic contact are formed on their surfaces.
このオーム性電極としては、In―Ga合金、ニ
ツケル、銅の無電解メツキ被膜、さらにはAgに
Zn，Pbなどを加えた焼付銀などがある。 This ohmic electrode can be made of In-Ga alloy, nickel, copper electroless plating, and even Ag.
There is also baked silver with added Zn, Pb, etc.
この発明はかかる背景からなるチタン酸バリウ
ム系半導体磁器素子のオーム性電極について、新
規な構成からなるものを提供することを目的とす
る。 The object of the present invention is to provide an ohmic electrode of a barium titanate semiconductor ceramic element having a novel configuration.
また、この発明は乾式メツキ膜からなるオーム
性電極を形成したチタン酸バリウム系半導体磁器
素子を提供することを目的とする。 Another object of the present invention is to provide a barium titanate semiconductor ceramic element having an ohmic electrode formed of a dry plating film.
さらに、この発明は具体的にはニツケル―銅合
金からなるオーム性電極を形成したチタン酸バリ
ウム系半導体磁器素子を提供することを目的とす
る。 A further object of the present invention is to provide a barium titanate semiconductor ceramic element having an ohmic electrode made of a nickel-copper alloy.
以下、この発明を実施例にもとづいて詳細に説
明する。 Hereinafter, this invention will be explained in detail based on examples.
実施例 １
チタン酸バリウム系半導体磁器として次の組成
からなるものを用いた。Example 1 A barium titanate semiconductor ceramic having the following composition was used.
（Ba.7937 Sr.20 Mn.0013 Y.005）Ti1.01O3＋
0.02SiO2
かかる半導体磁器として大きさが17.5mmφ、厚
み2.5mmのものをスパツタリング装置の陽極側に
設置し、一方陰極側にはニツケル70％、銅30％か
らなるニツケル―銅合金のターゲツトを設置し
た。こののち真空層内を一旦１×10-6Torr以上
の高真空に排気し、さらにアルゴンガスを真空槽
内に導入し、１×10-2〜１×10-3Torr程度の真
空度に調節した。次いで、陽極、陰極間に
1KV／mmの直流高電圧を印加し、ターゲツトに
印加される電力を4.5KWとして半導体磁器の対
向主表面の一方にニツケル―銅合金からなるスパ
ツタリング膜の電極を形成した。 (Ba. 7937 Sr. 20 Mn. 0013 Y. 005 ) Ti 1 . 01 O 3 +
A semiconductor porcelain containing 0.02SiO 2 with a size of 17.5 mmφ and a thickness of 2.5 mm was installed on the anode side of the sputtering device, while a nickel-copper alloy target consisting of 70% nickel and 30% copper was installed on the cathode side. did. After this, the inside of the vacuum layer is once evacuated to a high vacuum of 1×10 -6 Torr or more, and then argon gas is introduced into the vacuum chamber to adjust the degree of vacuum to about 1×10 -2 to 1×10 -3 Torr. did. Then, between the anode and cathode
A DC high voltage of 1 KV/mm was applied, and the power applied to the target was 4.5 KW, and an electrode of a sputtered film made of a nickel-copper alloy was formed on one of the opposing main surfaces of the semiconductor ceramic.
同様にして、他方の対向主表面にもニツケル―
銅合金からなるスパツタリング膜の電極を形成し
た。このとき半導体磁器の側面にはスパツタリン
グ膜が付着しないようにマスクを介したことはも
ちろんである。 Similarly, the other opposing main surface is also covered with nickel.
A sputtered film electrode made of a copper alloy was formed. Of course, at this time, a mask was used to prevent the sputtering film from adhering to the side surface of the semiconductor ceramic.
このようにして得られたチタン酸バリウム系半
導体磁器素子の試料について、印加電圧0.1Vで
の抵抗値を測定したところ、7.63Ωであつた。同
じ半導体磁器について、In―Ga合金を擦り付け
て電極を形成した試料の抵抗値を測定したとこ
ろ、7.79Ωであり、In―Ga合金と同程度のオーミ
ツク性を示すものであることが確認できた。 The resistance value of the sample of the barium titanate semiconductor ceramic element thus obtained at an applied voltage of 0.1 V was measured and found to be 7.63Ω. When we measured the resistance value of a sample of the same semiconductor porcelain in which an electrode was formed by rubbing In-Ga alloy, it was 7.79Ω, confirming that it exhibited ohmic properties on the same level as In-Ga alloy. .
また、抵抗温度特性を測定したところ第１図の
実線で示た特性を示した。図中の破線はIn―Ga
合金の電極を形成した試料である。なお、縦軸は
抵抗倍率で示した。これは25℃における抵抗値を
基準にして倍率で示したものである。 Further, when the resistance temperature characteristics were measured, the characteristics shown by the solid line in FIG. 1 were obtained. The dashed line in the figure is In-Ga
This is a sample with an alloy electrode formed. Note that the vertical axis represents the resistance magnification. This is expressed as a magnification based on the resistance value at 25°C.
さらに、電圧電流特性を測定し、その結果もIn
―Ga合金電極の試料と比較して第２図に示した。
図中の実線はこの実施例の試料、また破線はIn―
Ga合金電極のものである。 Furthermore, we measured the voltage-current characteristics, and the results were also In
- A comparison with a Ga alloy electrode sample is shown in Figure 2.
The solid line in the figure is the sample of this example, and the broken line is In-
It is a Ga alloy electrode.
さらに、電極強度を測定するため、粘着テープ
を電極面に貼り付け、剥離試験を行つたところ、
電極の剥離は見られず、実用価値のあるものであ
ることが判明した。 Furthermore, in order to measure the electrode strength, adhesive tape was attached to the electrode surface and a peel test was performed.
No peeling of the electrode was observed, and it was found to have practical value.
実施例 ２
チタン酸バリウム系半導体磁器として次の組成
からなるものを用いた。Example 2 A barium titanate semiconductor ceramic having the following composition was used.
（Ba.8937 Pb.10 Y.005 Mn.0013）TiO3＋
0.02SiO2
以下、実施例１と同様にニツケル―銅合金から
なる電極を形成して試料を作成した。また同じ半
導体磁器について、In―Ga合金を擦り付けて電
極を形成して、これを比較試料とした。 (Ba. 8937 Pb. 10 Y. 005 Mn. 0013 ) TiO 3 +
A sample was prepared by forming an electrode made of a nickel-copper alloy of 0.02SiO 2 or less in the same manner as in Example 1. In addition, an electrode was formed by rubbing an In-Ga alloy onto the same semiconductor porcelain, and this was used as a comparison sample.
これら各試料につき、印加電圧0.1Vでの抵抗
値を測定したところ、この実施例によるものは
14.14Ω、また比較試料であるIn―Ga合金電極の
ものは16.40Ωであつた。 When we measured the resistance value of each of these samples at an applied voltage of 0.1V, we found that the one according to this example
The resistance was 14.14Ω, and the comparison sample with an In-Ga alloy electrode was 16.40Ω.
また抵抗温度特性、電圧電流特性を測定し、そ
の結果を第３図、第４図にそれぞれ示した。図
中、実線はこの実施例によるもの、破線は比較試
料であるIn―Ga合金電極のものである。なお、
第３図は第１図と同様に縦軸を抵抗倍率で示し
た。 Furthermore, the resistance temperature characteristics and voltage-current characteristics were measured, and the results are shown in FIGS. 3 and 4, respectively. In the figure, the solid line is for this example, and the broken line is for the In--Ga alloy electrode, which is a comparative sample. In addition,
In FIG. 3, the vertical axis represents the resistance magnification as in FIG. 1.
さらに、この実施例にかかる試料について、粘
着テープを電極面に貼り付け、剥離試験を行つて
電極強度を測定したところ、電極の剥離が見られ
ず、実用性のあることが判明した。 Furthermore, when an adhesive tape was attached to the electrode surface of the sample according to this example and a peel test was performed to measure the electrode strength, no peeling of the electrode was observed, indicating that the sample had practicality.
実施例１，２において、半導体磁器の電極の形
成面にエツチング処理を施すことによつて、さら
に電極強度を増加させ得ることが確認できた。ま
た、電極形成後に熱処理を施すことによつて、チ
タン酸バリウム系半導体磁器素子の比抵抗を下げ
ることができるなどの効果が得られることも確認
できた。 In Examples 1 and 2, it was confirmed that the electrode strength could be further increased by etching the electrode forming surface of the semiconductor ceramic. It was also confirmed that by performing heat treatment after electrode formation, effects such as lowering the specific resistance of the barium titanate-based semiconductor ceramic element could be obtained.
以上この発明にかかるチタン酸バリウム系半導
体磁器素子は電極としてニツケル―銅合金を形成
したものであり、安価でかつ十分なオーミツク性
が得られるほか、抵抗温度特性、電流電圧特性に
おいてもIn―Ga合金電極と比較して同程度の特
性が得られており、電流制御素子、定温度発熱素
子などに用いられる正の抵抗温度特性を有する抵
抗体として有用なものである。また十分な電極強
度を有し、実用上何ら支障のないものである。 As described above, the barium titanate-based semiconductor ceramic element according to the present invention has a nickel-copper alloy formed as an electrode, and is inexpensive and has sufficient ohmic properties. It has properties comparable to those of alloy electrodes, and is useful as a resistor with positive resistance-temperature characteristics used in current control elements, constant temperature heating elements, etc. Moreover, it has sufficient electrode strength and causes no practical problems.
第１図はこの発明の一実施例にかかる抵抗温度
特性図、第２図は同じく電圧電流特性図、第３図
はこの発明の他の実施例にかかる抵抗温度特性
図、第４図は同じく電圧電流特性図である。
FIG. 1 is a resistance-temperature characteristic diagram according to an embodiment of the present invention, FIG. 2 is a voltage-current characteristic diagram, and FIG. 3 is a resistance-temperature characteristic diagram according to another embodiment of the invention. It is a voltage-current characteristic diagram.
Claims (1)
にニツケル―銅合金のスパツタリング膜からなる
電極が形成されているチタン酸バリウム系半導体
磁器素子。1. A barium titanate-based semiconductor ceramic element in which electrodes made of a sputtered nickel-copper alloy film are formed on opposing main surfaces of barium titanate-based semiconductor ceramic.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18284981A JPS5884402A (en) | 1981-11-13 | 1981-11-13 | Barium titanate series semiconductor porcelain element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18284981A JPS5884402A (en) | 1981-11-13 | 1981-11-13 | Barium titanate series semiconductor porcelain element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5884402A JPS5884402A (en) | 1983-05-20 |
| JPS6335083B2 true JPS6335083B2 (en) | 1988-07-13 |
Family
ID=16125530
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18284981A Granted JPS5884402A (en) | 1981-11-13 | 1981-11-13 | Barium titanate series semiconductor porcelain element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5884402A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH023085A (en) * | 1988-06-17 | 1990-01-08 | Hitachi Ltd | LCD projection device |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55122380A (en) * | 1979-03-15 | 1980-09-20 | Matsushita Electric Industrial Co Ltd | Barium titanate heater |
-
1981
- 1981-11-13 JP JP18284981A patent/JPS5884402A/en active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH023085A (en) * | 1988-06-17 | 1990-01-08 | Hitachi Ltd | LCD projection device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5884402A (en) | 1983-05-20 |
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