JPH07123082B2 - Method for forming electrode of porcelain semiconductor element - Google Patents
Method for forming electrode of porcelain semiconductor elementInfo
- Publication number
- JPH07123082B2 JPH07123082B2 JP2223024A JP22302490A JPH07123082B2 JP H07123082 B2 JPH07123082 B2 JP H07123082B2 JP 2223024 A JP2223024 A JP 2223024A JP 22302490 A JP22302490 A JP 22302490A JP H07123082 B2 JPH07123082 B2 JP H07123082B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- electrode
- porcelain
- semiconductor element
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 title claims description 26
- 229910052573 porcelain Inorganic materials 0.000 title claims description 22
- 238000000034 method Methods 0.000 title claims description 15
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 33
- 239000010408 film Substances 0.000 claims description 20
- 239000010409 thin film Substances 0.000 claims description 20
- 229910052759 nickel Inorganic materials 0.000 claims description 15
- 229910052751 metal Inorganic materials 0.000 claims description 14
- 239000002184 metal Substances 0.000 claims description 14
- 239000011651 chromium Substances 0.000 claims description 13
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 12
- 229910052804 chromium Inorganic materials 0.000 claims description 12
- 238000004544 sputter deposition Methods 0.000 claims description 8
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 5
- 229910052709 silver Inorganic materials 0.000 claims description 5
- 239000004332 silver Substances 0.000 claims description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- 229910045601 alloy Inorganic materials 0.000 claims description 4
- 239000000956 alloy Substances 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 238000010030 laminating Methods 0.000 claims description 2
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 7
- 239000000919 ceramic Substances 0.000 description 6
- 238000007747 plating Methods 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000007772 electroless plating Methods 0.000 description 3
- 229910000807 Ga alloy Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 238000007751 thermal spraying Methods 0.000 description 2
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- 229910000599 Cr alloy Inorganic materials 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000000788 chromium alloy Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
Landscapes
- Apparatuses And Processes For Manufacturing Resistors (AREA)
- Thermistors And Varistors (AREA)
Description
【発明の詳細な説明】 （産業上の利用分野） 本発明は磁器半導体素子の電極形成方法に関する。The present invention relates to a method for forming electrodes of a porcelain semiconductor element.
（従来の技術） 従来、磁器半導体素子、例えば、正特性サーミスタ、負
特性サーミスタ、バリスタなどの電極形成方法として
は、（イ）半導体磁器素体の表面にニッケルを無電解メ
ッキする方法、（ロ）半導体磁器素体表面にニッケルを
無電解メッキしたのち、そのメッキ上に銀ペーストを塗
布して焼き付ける方法、（ハ）半導体磁器素体の表面
に、ガリウム−銀合金もしくはアルミニウム粉末を含有
するオーミック性ペーストを塗布、焼成する方法、
（ニ）半導体磁器素体の表面にアルミニウムやニッケル
などの金属を溶射し、必要に応じてその上にハンダ付け
可能な金属、例えば、銅を溶射する方法などが採用され
ている。(Prior Art) Conventionally, as a method of forming electrodes of a porcelain semiconductor element, for example, a positive characteristic thermistor, a negative characteristic thermistor, a varistor, (a) a method of electroless plating nickel on the surface of a semiconductor porcelain body, ) A method in which nickel is electrolessly plated on the surface of the semiconductor porcelain body and then a silver paste is applied on the plating and baked. (C) Ohmic contact containing a gallium-silver alloy or aluminum powder on the surface of the semiconductor porcelain body Of applying and baking a conductive paste,
(D) A method in which a metal such as aluminum or nickel is sprayed on the surface of the semiconductor porcelain body, and a metal that can be soldered thereon, for example, copper is sprayed if necessary.
（発明が解決しようとする課題） しかしながら、前記（イ）のメッキ法は、Niメッキの膜
厚を厚くしようとすると、密着強度が低下するため厚い
電極を得ることができず、またNiは電極材料としては比
抵抗が6.8×10-6Ωcmと大きいため大きな突入電流によ
って焼損することがあり、しかもオーミック接触を得る
ためには300℃以上の温度での熱処理が必要であるた
め、熱処理によりNi表面が酸化し、半田付け性が悪くな
るなどの問題がある他、メッキ液中の塩素イオンや硫酸
イオン等が半導体磁器素体の内部に浸透し、素子の電気
的特性、特に、耐圧特性を劣化させるという問題があ
り、また、メッキ後に外周の研磨が必要で磁器半導体素
子のコストアップを招くという問題がある。(Problems to be solved by the invention) However, in the plating method of (a), if an attempt is made to increase the thickness of the Ni plating, it is not possible to obtain a thick electrode because the adhesion strength is reduced. Since the material has a large specific resistance of 6.8 × 10 -6 Ωcm, it may be burned out by a large inrush current. Moreover, heat treatment at a temperature of 300 ° C or higher is required to obtain ohmic contact, so the heat treatment makes Ni There is a problem that the surface oxidizes and the solderability deteriorates.In addition, chloride ions and sulfate ions in the plating solution penetrate into the semiconductor porcelain body to improve the electrical characteristics of the element, especially the pressure resistance characteristics. There is a problem that it deteriorates, and there is also a problem that polishing of the outer periphery is required after plating, resulting in an increase in the cost of the porcelain semiconductor element.
前記（ロ）の方法は、（イ）の方法に比べて電流容量お
よび寿命特性を改善することはできるが、イオン浸透に
よる耐圧特性の劣化は避けられないという問題がある。
さらに、前記（ハ）の方法は、半田付け性および耐湿性
が悪いという問題がある。また、前記（ニ）の溶射方法
は、半導体磁器素体と電極との密着強度が弱く、リード
線の引張り強度が弱いという問題がある。The method (b) can improve the current capacity and life characteristics as compared with the method (a), but has a problem that deterioration of pressure resistance due to ion penetration is unavoidable.
Further, the above method (C) has a problem that solderability and moisture resistance are poor. Further, the thermal spraying method (d) has a problem that the adhesion strength between the semiconductor ceramic body and the electrode is weak and the tensile strength of the lead wire is weak.
従って、本発明は、半導体磁器素体自体の特性を劣化さ
せることなく、電気的特性に優れた電極を安価に形成す
ることができるようにすることを技術的課題とするもの
である。Therefore, it is a technical object of the present invention to make it possible to inexpensively form an electrode having excellent electric characteristics without deteriorating the characteristics of the semiconductor ceramic body itself.
（課題を解決するための手段） 本発明は、前記課題を解決するために、半導体磁器素体
の表面にクロムまたはその合金をスパッタリングして薄
膜金属層を形成した後、その上にニッケルをスパッタリ
ングして薄膜ニッケル層を積層し、次いで該薄膜ニッケ
ル層上に金、銀及び銅からなる群から選ばれた少なくと
も一種を主成分とする導電性ペーストを用いて厚膜導電
層を積層するようにしたものである。(Means for Solving the Problems) In order to solve the above problems, the present invention forms a thin film metal layer by sputtering chromium or an alloy thereof on the surface of a semiconductor porcelain body, and then sputters nickel thereon. To form a thin film nickel layer, and then to form a thick film conductive layer on the thin film nickel layer by using a conductive paste containing at least one selected from the group consisting of gold, silver and copper as a main component. It was done.
（作用） 本発明は、基本的に、半導体磁器素体とオーミック接触
する金属をスパッタリングして薄膜金属層を形成し、該
薄膜金属層上に導電性ペーストを用いて厚膜導電層を形
成して磁器半導体素子の電極を形成するようにしたもの
であるが、薄膜金属層を形成するに際して、スパッタリ
ング法を採用することによって、メッキ、蒸着あるいは
溶射など他の薄膜形成手段に比べて、磁器素体に対する
密着強度を向上させることができ、また、その薄膜材料
としてクロムもしくはその合金を採用することにより、
半導体磁器との密着強度が高く、良好なオーミック性接
触を示す薄膜金属層が形成される。(Operation) The present invention basically forms a thin film metal layer by sputtering a metal that makes ohmic contact with a semiconductor porcelain body, and forms a thick film conductive layer on the thin film metal layer using a conductive paste. The electrode of a porcelain semiconductor element is formed by using a sputtering method when forming a thin-film metal layer, so that a porcelain element can be formed as compared with other thin-film forming means such as plating, vapor deposition or thermal spraying. Adhesion strength to the body can be improved, and by adopting chromium or its alloy as the thin film material,
A thin film metal layer having high adhesion strength with a semiconductor ceramic and exhibiting good ohmic contact is formed.
しかし、このスパッタリング法は、成膜速度が遅く大電
流を流し得る厚肉の金属皮膜の形成が困難であり、無理
に厚肉の金属皮膜を形成しようとすると、スパッタリン
グ装置内にカスが溜ってリークや短絡などの故障を生じ
させ易く、装置のメインテナンスに多大な費用と労力を
要する結果となる。しかも、クロムは半田付け性が悪い
ため、半田付けを必要とする場合には適当でなく、ま
た、比抵抗が13×10-6Ωcmと、電極材料として一般に利
用されている銀（1.6×10-6Ωcm）、金（2.2×10-6Ωc
m）、銅（1.7×10-6Ωcm）、アルミニウム（2.7×10-6
Ωcm）などに比べて大きいため、クロムだけで厚い電極
を形成しようとすると、コストが高くなり実用的でなく
なり、膜厚を薄くしてそのまま電極として使用すると、
大きな電流を突入させたとき電極が焼損する場合があ
る。However, this sputtering method has a slow film formation rate and it is difficult to form a thick metal film capable of passing a large current, and when trying to forcibly form a thick metal film, dust is accumulated in the sputtering apparatus. Failures such as leaks and short circuits are likely to occur, resulting in a large amount of cost and labor for maintaining the device. Moreover, since chromium has poor solderability, it is not suitable when soldering is required, and the specific resistance is 13 × 10 -6 Ωcm, which is commonly used as an electrode material (1.6 × 10 -6 Ωcm), gold (2.2 × 10 -6 Ωc
m), copper (1.7 × 10 -6 Ωcm), aluminum (2.7 × 10 -6
Since it is larger than Ωcm), it will be costly and impractical to form a thick electrode only with chromium, and if the thin film thickness is used as it is as an electrode,
The electrodes may be burned when a large current is applied.
そこで、本発明においては、所要の密着強度と良好なオ
ーミック性接触を得るに十分なだけの厚さの薄膜金属層
をスパッタリングで磁器素体上に形成し、その上に比抵
抗の小さな材料を用いて厚膜形成法により電極の大部分
を形成して、半田付け性を向上させると同時に、経済性
と大電流に対処するようにしている。Therefore, in the present invention, a thin film metal layer having a sufficient thickness to obtain the required adhesion strength and good ohmic contact is formed on the porcelain body by sputtering, and a material having a small specific resistance is formed thereon. Most of the electrodes are formed by using the thick film forming method to improve solderability, and at the same time, to cope with economical efficiency and large current.
他方、前記クロム又はその合金からなる薄膜電極層は、
その上に厚膜電極層を形成するまでにある程度の期間を
要する場合、空気に比較的長時間さらされるため酸化し
て薄膜電極層の表面に酸化皮膜を形成し、厚膜電極層形
成材料との間のヌレ性を低下させ、密着強度を低下させ
るという問題を生じる。On the other hand, the thin film electrode layer made of chromium or its alloy,
When it takes a certain amount of time to form a thick film electrode layer on it, it is exposed to air for a relatively long time and is oxidized to form an oxide film on the surface of the thin film electrode layer. There is a problem that the wetting property between the two is reduced and the adhesion strength is reduced.
そこで、本発明においては、クロムまたはクロム合金か
らなる薄膜金属層を下地層とし、その上にニッケルをス
パッタリングして耐酸化性に優れ比抵抗の小さな薄膜ニ
ッケル層を積層することによって、クロム系薄膜電極層
の酸化を防止し、厚膜電極層形成材料とのヌレ性を保証
すると共に、電極層間の密着強度を確保し、また、大電
流に耐え得るようにしている。Therefore, in the present invention, a thin film metal layer made of chromium or a chromium alloy is used as an underlayer, and nickel is sputtered thereon to form a thin film nickel layer excellent in oxidation resistance and having a small specific resistance. Oxidation of the electrode layer is prevented, the wettability with the material for forming the thick film electrode layer is ensured, the adhesion strength between the electrode layers is secured, and a large current can be endured.
（参考例） クロムをターゲットとし、正特性サーミスタ用の半導体
磁器素体の表面にCrをスパッタリングして0.2μｍ厚の
クロム皮膜を形成し、その上に銀ペーストを塗布した
後、500、600、700℃でそれぞれ焼成して５μｍ厚の厚
膜導電層を形成して電極とした。(Reference example) Chromium is used as a target and chromium is sputtered on the surface of a semiconductor ceramic body for a positive temperature coefficient thermistor to form a 0.2 μm thick chromium film. After applying a silver paste on it, 500, 600, Each was fired at 700 ° C. to form a thick film conductive layer having a thickness of 5 μm and used as an electrode.
（実施例１） クロムをターゲットとし、正特性サーミスタ用の半導体
磁器素体の表面にCrをスパッタリングして0.2μｍ厚の
クロム皮膜を形成し、その上にNiをスパッタリングして
0.2μｍ厚のニッケル皮膜を形成した後、Agペーストを
用いて５μｍ厚の厚膜導電層を形成して電極とした。(Example 1) Using chromium as a target, Cr was sputtered on the surface of a semiconductor ceramic body for a positive temperature coefficient thermistor to form a 0.2 μm thick chromium film, and then Ni was sputtered thereon.
After forming a nickel film having a thickness of 0.2 μm, a thick film conductive layer having a thickness of 5 μm was formed using Ag paste to form an electrode.
得られた各正特性サーミスタの25℃での抵抗値を第１表
に、また、500℃で焼成した試料について測定した電気
的特性および密着強度を、従来法により電極を形成した
正特性サーミスタについての結果と共に、第２表に示
す。The resistance values at 25 ° C of the obtained PTC thermistors are shown in Table 1, and the electrical properties and adhesion strength measured for the samples fired at 500 ° C are shown for the PTC thermistors with electrodes formed by the conventional method. The results are shown in Table 2.
なお、正特性サーミスタ用の半導体磁器素体の特性は、
この種の素子の初期特性測定用電極として一般に採用さ
れているIn−Ga合金電極を形成して測定したものであ
る。The characteristics of the semiconductor ceramic body for positive temperature coefficient thermistors are:
It is measured by forming an In-Ga alloy electrode which is generally adopted as an electrode for measuring initial characteristics of this type of device.
また、比較例の各試料は、実施例と同ロットの正特性サ
ーミスタ素体を用いて製造したものであり、比較例１は
素体表面に無電解メッキ法により1.5μｍ厚のニッケル
皮膜を形成して電極としたもの、比較例２は素体表面に
無電解メッキ法により厚さ1.5μｍのニッケル層を形成
した後、銀ペーストを塗布し、600℃で10分焼き付けて
５μｍ厚の厚膜導電層を形成して電極としたもの、比較
例３は素体表面にAg−Ga合金ペーストを塗布し、600℃
で10分焼き付けて７μｍ厚の電極としたもの、比較例４
は素体表面にアルミニウムを溶射して20μｍ厚のアルミ
ニウム皮膜を形成して電極としたものである。Further, each sample of the comparative example is manufactured by using the positive temperature coefficient thermistor element of the same lot as the example, and in Comparative example 1, a nickel film having a thickness of 1.5 μm is formed on the surface of the element by electroless plating. In Comparative Example 2, a nickel layer having a thickness of 1.5 μm was formed on the surface of the element body by an electroless plating method, and then a silver paste was applied and baked at 600 ° C. for 10 minutes to form a thick film having a thickness of 5 μm. A conductive layer was formed as an electrode, and in Comparative Example 3, Ag-Ga alloy paste was applied to the surface of the element body, and the temperature was 600 ° C.
Electrodes baked for 10 minutes at 7 μm thickness, Comparative Example 4
Is an electrode formed by spraying aluminum on the surface of the element body to form an aluminum film having a thickness of 20 μm.
寿命特性は、各試料に800mAの直流電流を1000時間連続
通電し、その通電前後の抵抗値の変化として求めた。ま
た、電流容量を知るため、各試料にパルス電圧を印加し
て電流容量と等価であるフラッシュ耐圧を測定した。The life characteristics were obtained by continuously applying a DC current of 800 mA to each sample for 1000 hours and then measuring the change in resistance value before and after the application of the current. In addition, in order to know the current capacity, a pulse voltage was applied to each sample and the flash withstand voltage equivalent to the current capacity was measured.
耐湿特性は、各試料を60℃、90〜95％RHの槽中に1000時
間放置し、その前後での抵抗値の変化率を求めた。Regarding the moisture resistance, each sample was left in a tank at 60 ℃ and 90 to 95% RH for 1000 hours, and the rate of change in resistance before and after that was determined.
リード線引張り強度は、各試料にリード線を半田付けし
た後、リード線を固定させて各試料を0.9mm/sの速さで
引張り、リード線がとれるまでに加わった最大の力を測
定した。For the lead wire tensile strength, after soldering the lead wire to each sample, fixing the lead wire and pulling each sample at a speed of 0.9 mm / s, the maximum force applied until the lead wire was taken was measured. .
静耐圧特性は、適当な電圧を各試料に１分間印加する。
これをくり返し、試料が破壊したときの電圧値を測定し
た。As for the static breakdown voltage characteristic, an appropriate voltage is applied to each sample for 1 minute.
This was repeated and the voltage value when the sample was broken was measured.
フラッシュ耐圧は、各試料に100Vの電圧を５秒印加した
後、25℃の風を３分間あてて抵抗値を測定する。これを
電圧を上げてくり返し、抵抗値が変化したときの電圧値
を測定した。For the flash withstand voltage, a voltage of 100 V is applied to each sample for 5 seconds, and then a resistance value is measured by applying 25 ° C. air for 3 minutes. This was repeated by increasing the voltage, and the voltage value when the resistance value changed was measured.
第１表の結果から、参考例のものは厚膜電極の焼付け温
度が600℃になると、急激に抵抗が増大するのに対し
て、本実施例のものでは、600℃でも殆ど変わらないこ
とがわかる。また、第２表の結果から、本発明方法によ
り製造された試料は、抵抗値が半導体磁器素体自体のも
のと変わらず、リード線引張強度、静耐圧、直流通電試
験において著しく向上していることが判る。 From the results shown in Table 1, in the reference example, when the baking temperature of the thick film electrode reaches 600 ° C., the resistance rapidly increases, whereas in the present example, there is almost no change even at 600 ° C. Recognize. Further, from the results of Table 2, the resistance value of the sample manufactured by the method of the present invention is not different from that of the semiconductor porcelain body itself, and the lead wire tensile strength, static withstand voltage and direct current test are remarkably improved. I understand.
（発明の効果） 本発明によれば、スパッタリングにより薄膜金属層を形
成し、その上に導電性ペーストを用いて厚膜導電層を積
層して電極を形成することにより次のような効果が得ら
れる。(Effects of the Invention) According to the present invention, the following effects can be obtained by forming a thin film metal layer by sputtering and laminating a thick film conductive layer using a conductive paste thereon to form an electrode. To be
1.電極形成時に半導体磁器に悪影響を及ぼさないため、
安定した抵抗値の磁器半導体素子を得ることができる 2.磁器半導体素子の寿命特性を向上させることができる 3.大電流に耐えられる電極を形成することができる 4.リード線引張強度の強い磁器半導体素子が得られる 5.耐圧特性に優れた磁器半導体素子を製造することがで
きる。1.Because it does not adversely affect semiconductor porcelain when forming electrodes,
It is possible to obtain a porcelain semiconductor element with a stable resistance value 2. It is possible to improve the life characteristics of the porcelain semiconductor element 3. It is possible to form an electrode that can withstand a large current 4. Porcelain with a strong lead wire tensile strength A semiconductor element can be obtained. 5. A porcelain semiconductor element with excellent withstand voltage characteristics can be manufactured.
───────────────────────────────────────────────────── フロントページの続き (72)発明者 鹿間 隆 京都府長岡京市天神２丁目26番10号 株式 会社村田製作所内 (56)参考文献 特開 平１−259501（ＪＰ，Ａ) 特開 昭58−71603（ＪＰ，Ａ) ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Takashi Shika 226-10 Tenjin, Nagaokakyo City, Kyoto Prefecture Murata Manufacturing Co., Ltd. (56) Reference JP 1-259501 (JP, A) JP 58 -71603 (JP, A)
Claims (1)
合金をスパッタリングして薄膜金属層を形成した後、そ
の上にニッケルをスパッタリングして薄膜ニッケル層を
積層し、次いで該薄膜ニッケル層上に金、銀及び銅から
選ばれた一種を主成分とする導電性ペーストを用いて厚
膜導電層を積層することを特徴とする磁器半導体素子の
電極形成方法。1. A thin-film metal layer is formed by sputtering chromium or an alloy thereof on the surface of a semiconductor porcelain body, and then nickel is sputtered thereon to form a thin-film nickel layer. Then, the thin-film nickel layer is formed on the thin-film nickel layer. A method for forming an electrode of a porcelain semiconductor element, which comprises laminating a thick film conductive layer using a conductive paste containing one kind selected from gold, silver and copper as a main component.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2223024A JPH07123082B2 (en) | 1990-08-23 | 1990-08-23 | Method for forming electrode of porcelain semiconductor element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2223024A JPH07123082B2 (en) | 1990-08-23 | 1990-08-23 | Method for forming electrode of porcelain semiconductor element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH04105303A JPH04105303A (en) | 1992-04-07 |
| JPH07123082B2 true JPH07123082B2 (en) | 1995-12-25 |
Family
ID=16791645
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2223024A Expired - Lifetime JPH07123082B2 (en) | 1990-08-23 | 1990-08-23 | Method for forming electrode of porcelain semiconductor element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH07123082B2 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104282404B (en) * | 2014-09-18 | 2017-05-17 | 兴勤（常州）电子有限公司 | Composite copper electrode ceramic positive temperature coefficient thermistor and preparation process thereof |
| CN107622850A (en) * | 2017-09-25 | 2018-01-23 | 江苏时瑞电子科技有限公司 | Negative tempperature coefficient thermistor with combined type copper electrode and preparation method thereof |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5871603A (en) * | 1981-10-23 | 1983-04-28 | 松下電器産業株式会社 | Manufacturing method of thin film thermistor |
| JPH01259501A (en) * | 1988-04-08 | 1989-10-17 | Murata Mfg Co Ltd | Manufacture of thermistor |
-
1990
- 1990-08-23 JP JP2223024A patent/JPH07123082B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPH04105303A (en) | 1992-04-07 |
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