JPS6348822B2 - - Google Patents
Info
- Publication number
- JPS6348822B2 JPS6348822B2 JP54142664A JP14266479A JPS6348822B2 JP S6348822 B2 JPS6348822 B2 JP S6348822B2 JP 54142664 A JP54142664 A JP 54142664A JP 14266479 A JP14266479 A JP 14266479A JP S6348822 B2 JPS6348822 B2 JP S6348822B2
- Authority
- JP
- Japan
- Prior art keywords
- temperature
- resistance
- resistor
- mol
- heater
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000919 ceramic Substances 0.000 claims description 10
- 239000000203 mixture Substances 0.000 claims description 9
- 229910017493 Nd 2 O 3 Inorganic materials 0.000 claims description 5
- 229910021193 La 2 O 3 Inorganic materials 0.000 claims description 4
- 238000010304 firing Methods 0.000 claims description 3
- 238000000465 moulding Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Compositions Of Oxide Ceramics (AREA)
- Non-Adjustable Resistors (AREA)
Description
本発明は高温用抵抗体組成物およびセラミツク
ヒータ用抵抗体に関するものである。
従来のセラミツクヒータ用抵抗体はSiCあるい
はBaTiO3系PTCサーミスタなどがあるが、前者
は1500℃付近の高温度まで使用できるが、抵抗の
温度特性が非常に大きい欠点があり、後者は高々
300℃付近までしか利用できない。
本発明は高温度下における抵抗変化率が小さい
ヒータ用抵抗体および高温度下で使用可能なオー
ミツク特性をもつ抵抗体組成物を提供しようとす
るものであり、ZnO99.8〜80モル%とLa2O3、
Y2O3、Nd2O3ならびにGd2O3の内の少なくとも
1種以上から成る酸化物0.2〜20モル%からなる
組成物、および、これを焼成した抵抗体を特徴と
するものであり、800℃の高温度まで抵抗の温度
変化率の小さなセラミツクヒータおよび高温用オ
ーミツク抵抗体が得られるものである。このセラ
ミツクの比抵抗は0.1〜100Ω―cmの範囲内で自由
に得られる。またヒータとして重要な特性項目で
ある熱シヨツクに対しては非常に強く、たとえば
長さ200mm、巾20mm、厚さ2mmの棒状セラミツク
ヒータとし、これに電圧を印加して800℃の温度
に加熱した上に水100mlを急激にかけてもヒータ
は割れず、すぐに800℃の温度に復帰する。
ヒータの形状は原料粉末を成形する際に自由に
制御でき、また押出し成形、あるいはアルミナな
どの基板に印刷することも可能である。
本発明によるヒータ用抵抗体および高温用オー
ミツク抵抗体は抵抗の温度変化率が小さく、約
1000℃まで一定で、それ以上の温度で抵抗は上昇
する特徴があるので過電流防止ができる優れた利
点があり、従来見られなかつた全く新しい酸化物
半導体セラミツクヒータ用抵抗体および高温用オ
ーミツク抵抗体である。
以下実施例をあげて説明する。
ZnO、La2O3、Y2O3、Nd2O3、Gd2O3を第1表
に示すように配合し、成形圧力1000Kg/cm2で、長
さ250mm、巾25mm、厚み2.5mmに成形し1150〜1450
℃の範囲内の温度で、それぞれ1時間保持した。
焼成体の形状を長さ200mm、巾20mm、厚み2mmと
し、その両端面にオーミツク銀電極を付与した。
この物の比抵抗、および抵抗の温度変化率を測定
し、その結果を第1表および第2表に示す。代表
的な素子の抵抗―温度特性を第1図に示す。
第1表より明らかなように、ZnO99.8〜80モル
%と、La2O3、Y2O3、Nd2O3ならびにGd2O3から
選択された1種以上の酸化物0.2〜20%とからな
るセラミツクヒータ用抵抗体は、低抵抗でかつ広
い温度範囲にわたつて抵抗の温度変化率30%以内
の小さい半導体セラミツクヒータである。この組
成比率の範囲内であれば2種以上の元素を用いて
も同等の特性が得られることが確認された。上記
希土類元素の酸化物の割合0.2モル%より小さい
場合や20モル%より大きい場合には抵抗の変化率
が大きい。第2表より、組成物の焼成を1200〜
1400℃の範囲内の温度で実施すると、得られるヒ
ータ用抵抗体の抵抗変化率が30%以内になり、こ
の範囲外の温度では非常に大きくなる。
The present invention relates to a high temperature resistor composition and a resistor for ceramic heaters. Conventional resistors for ceramic heaters include SiC or BaTiO 3 -based PTC thermistors, but the former can be used up to high temperatures around 1500℃, but the drawback is that the temperature characteristics of the resistance are very large, and the latter can be used at very high temperatures.
It can only be used up to around 300℃. The present invention aims to provide a heater resistor with a small rate of change in resistance at high temperatures and a resistor composition with ohmic characteristics that can be used at high temperatures. 2O3 ,
It is characterized by a composition consisting of 0.2 to 20 mol% of an oxide consisting of at least one of Y 2 O 3 , Nd 2 O 3 and Gd 2 O 3 , and a resistor obtained by firing the same. , a ceramic heater and a high-temperature ohmic resistor with a small temperature change rate of resistance up to a high temperature of 800°C can be obtained. The specific resistance of this ceramic can be freely obtained within the range of 0.1 to 100 Ω-cm. It is also extremely resistant to heat shock, which is an important characteristic for a heater.For example, a rod-shaped ceramic heater with a length of 200 mm, a width of 20 mm, and a thickness of 2 mm is used, and a voltage is applied to it to heat it to a temperature of 800°C. Even when 100ml of water is suddenly poured on top of the heater, it does not break and the temperature quickly returns to 800℃. The shape of the heater can be freely controlled when molding the raw material powder, and it can also be extruded or printed on a substrate such as alumina. The heater resistor and high-temperature ohmic resistor according to the present invention have a small temperature change rate of resistance, and are approximately
Since the resistance is constant up to 1000℃ and increases at higher temperatures, it has the excellent advantage of preventing overcurrent, and is a completely new resistor for oxide semiconductor ceramic heaters and high-temperature ohmic resistors that have never been seen before. It is the body. This will be explained below by giving examples. ZnO, La 2 O 3 , Y 2 O 3 , Nd 2 O 3 , and Gd 2 O 3 were mixed as shown in Table 1, and the molding pressure was 1000 Kg/cm 2 and the length was 250 mm, the width was 25 mm, and the thickness was 2.5 mm. Molded to 1150~1450
Each was held at a temperature in the range of °C for 1 hour.
The shape of the fired body was 200 mm long, 20 mm wide, and 2 mm thick, and ohmic silver electrodes were provided on both end faces.
The specific resistance and temperature change rate of resistance of this product were measured, and the results are shown in Tables 1 and 2. Figure 1 shows the resistance-temperature characteristics of a typical element. As is clear from Table 1, 99.8 to 80 mol% of ZnO and 0.2 to 20% of one or more oxides selected from La 2 O 3 , Y 2 O 3 , Nd 2 O 3 and Gd 2 O 3 % is a semiconductor ceramic heater with low resistance and a temperature change rate of resistance within 30% over a wide temperature range. It was confirmed that equivalent characteristics can be obtained even if two or more types of elements are used within this composition ratio range. When the proportion of the oxide of the rare earth element is less than 0.2 mol% or greater than 20 mol%, the rate of change in resistance is large. From Table 2, the firing of the composition is from 1200 to
When carried out at a temperature within the range of 1400°C, the resistance change rate of the obtained heater resistor is within 30%, and at temperatures outside this range it becomes very large.
【表】【table】
【表】【table】
【表】
比抵抗は素子温度が20℃の時の値であり、変化
率は次の式で求めた。
Rx−R20/R20×100(%)
R20は素子の温度が20℃の時の抵抗値であり、
Rxは素子の温度が20℃の時の抵抗を基準にして、
素子の温度0〜800℃の範囲内での抵抗の最大値
である。
なお本発明の素子について常温から約1000℃ま
での温度において電流―電圧特性を測定した結
果、すべてオーミツク特性を示した。
以上のように本発明によれば高温度下における
抵抗値変化の少ないセラミツクヒータ用抵抗体お
よび高温用オーミツク抵抗体を得ることができる
ものである。[Table] The specific resistance is the value when the element temperature is 20°C, and the rate of change was calculated using the following formula. R x −R 20 /R 20 ×100 (%) R 20 is the resistance value when the element temperature is 20℃,
R x is based on the resistance when the element temperature is 20℃,
This is the maximum value of resistance within the temperature range of the element from 0 to 800°C. The current-voltage characteristics of the device of the present invention were measured at temperatures from room temperature to about 1000° C., and all of the results showed ohmic characteristics. As described above, according to the present invention, it is possible to obtain a ceramic heater resistor and a high-temperature ohmic resistor that exhibit little change in resistance value under high temperatures.
図は本発明のセラミツクヒータ用抵抗体組成物
および高温用抵抗体組成物を説明するための特性
図である。
The figure is a characteristic diagram for explaining the resistor composition for ceramic heaters and the resistor composition for high temperature use of the present invention.
Claims (1)
ならびにGd2O3から選択された1種以上の酸化物
0.2〜20モル%とからなることを特徴とする高温
用抵抗体組成物。 2 ZnO99.8〜80モル%とLa2O3、Y2O3、Nd2O3
ならびにGd2O3から選択された1種以上の酸化物
0.2〜20モル%から成る組成物を焼成してなるこ
とを特徴とするセラミツクヒータ用抵抗体。[Claims] 1 99.8 to 80 mol% of ZnO and La 2 O 3 , Y 2 O 3 , Nd 2 O 3
and one or more oxides selected from Gd 2 O 3
A high temperature resistor composition comprising 0.2 to 20 mol%. 2 ZnO99.8-80 mol% and La 2 O 3 , Y 2 O 3 , Nd 2 O 3
and one or more oxides selected from Gd 2 O 3
A resistor for a ceramic heater, characterized in that it is made by firing a composition consisting of 0.2 to 20 mol%.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14266479A JPS5669267A (en) | 1979-11-01 | 1979-11-01 | Ceramic resistant body composition and ceramic resistant body |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14266479A JPS5669267A (en) | 1979-11-01 | 1979-11-01 | Ceramic resistant body composition and ceramic resistant body |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5669267A JPS5669267A (en) | 1981-06-10 |
| JPS6348822B2 true JPS6348822B2 (en) | 1988-09-30 |
Family
ID=15320618
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP14266479A Granted JPS5669267A (en) | 1979-11-01 | 1979-11-01 | Ceramic resistant body composition and ceramic resistant body |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5669267A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01182455A (en) * | 1988-01-13 | 1989-07-20 | Ig Tech Res Inc | End part covering material |
| JPH01263359A (en) * | 1988-04-15 | 1989-10-19 | Ig Tech Res Inc | Edge part covering member |
| JPH01154726U (en) * | 1988-04-05 | 1989-10-24 | ||
| JPH0311750U (en) * | 1989-06-20 | 1991-02-06 | ||
| JPH0487959U (en) * | 1990-12-13 | 1992-07-30 |
-
1979
- 1979-11-01 JP JP14266479A patent/JPS5669267A/en active Granted
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01182455A (en) * | 1988-01-13 | 1989-07-20 | Ig Tech Res Inc | End part covering material |
| JPH01154726U (en) * | 1988-04-05 | 1989-10-24 | ||
| JPH01263359A (en) * | 1988-04-15 | 1989-10-19 | Ig Tech Res Inc | Edge part covering member |
| JPH0311750U (en) * | 1989-06-20 | 1991-02-06 | ||
| JPH0487959U (en) * | 1990-12-13 | 1992-07-30 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5669267A (en) | 1981-06-10 |
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