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JPS6352424B2 - - Google Patents
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JPS6352424B2 - - Google Patents

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Publication number
JPS6352424B2
JPS6352424B2 JP58026005A JP2600583A JPS6352424B2 JP S6352424 B2 JPS6352424 B2 JP S6352424B2 JP 58026005 A JP58026005 A JP 58026005A JP 2600583 A JP2600583 A JP 2600583A JP S6352424 B2 JPS6352424 B2 JP S6352424B2
Authority
JP
Japan
Prior art keywords
sample
axis
ray
axis direction
electron beam
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP58026005A
Other languages
Japanese (ja)
Other versions
JPS59151739A (en
Inventor
Yoshitaka Nagatsuka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Jeol Ltd
Original Assignee
Nihon Denshi KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nihon Denshi KK filed Critical Nihon Denshi KK
Priority to JP58026005A priority Critical patent/JPS59151739A/en
Publication of JPS59151739A publication Critical patent/JPS59151739A/en
Publication of JPS6352424B2 publication Critical patent/JPS6352424B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/252Tubes for spot-analysing by electron or ion beams; Microanalysers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Analysing Materials By The Use Of Radiation (AREA)

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、X線マイクロアナライザー
(XMA)における試料移動に伴なう試料表面位
置の変動を補正する方法に関する。
DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a method for correcting variations in sample surface position due to sample movement in an X-ray microanalyzer (XMA).

〔従来技術〕[Prior art]

XMAでは、試料面上の元素分布を測定する方
法の1つとして面分析法が採用されている。この
面分析法はコンピユータを用いてXMAを制御
し、電子ビームが照射される試料を二次元的に移
動して、該試料面上から電子ビーム照射によつて
放射されるX線を波長分散型X線分光器によつて
検出し、たとえばCRT画面に輝度変調像として
表示するものである。この波長分散型X線分光器
による分析においては、試料面の電子ビーム照射
点(即ちX線発生点)と分光器の位置関係を一定
に保つことが必要なため、電子線照射方向(Z
軸)に対して、平面状に研磨された試料表面が垂
直になるように試料ステージにセツトし、試料表
面をZ軸と垂直な平面内で移動させている。従つ
て試料ステージは、Z軸に対して垂直なX軸方向
とZ軸とX軸に対して垂直なY軸方向に試料を移
動させるX軸駆動機構とY軸駆動機構を備えてい
るが、更に試料をZ軸方向へ移動させるZ軸移動
機構が備えられており、このZ軸駆動機構は試料
を試料ステージにセツトしたときに最適位置が設
定されるように高さ調整される。この高さ調整
は、例えば電子線を試料に照射しながらX線分光
器によるX線検出出力をモニターし、Z軸駆動機
構によつて試料を上下させたときに最大の出力値
が得られる位置に試料の高さをセツトすることに
よつて行われる。このような高さ調整を済ませた
後に、前述したX軸駆動機構とY軸駆動機構へ走
査信号による制御を行つて電子線による試料面上
の二次元走査が行われる。しかし乍ら、試料ステ
ージの移動方向がZ軸と厳密には垂直でなかつた
り、試料が試料ステージに正しくセツトされなか
つたりした場合には、試料ステージの移動によつ
て電子線に照射される試料表面位置のZ軸方向の
座標が変動して分光器に入射するX線の発生点が
一定に保たれなくなる。このようなX線発生点の
変動を除くため、従来はX線分析をする試料表面
の各点について予め前述したような高さ調整によ
つて最適なZ軸座標を求めてX,Y軸駆動機構に
よるX,Y座標と対応させて記憶しておき、各測
定箇所ごとに記憶されたZ軸座標を読み出してZ
軸駆動機構を制御する方法が提案されていた。こ
のような制御方法によれば試料位置の補正は可能
となるが、多くの記憶容量を必要とし、各点ごと
に読み出して制御するため移動速度が遅くなり測
定領域全体のデータを収集するのに膨大な時間を
費す欠点がある。
In XMA, area analysis is used as one of the methods to measure the element distribution on the sample surface. This surface analysis method uses a computer to control the XMA, moves the sample irradiated with the electron beam two-dimensionally, and converts the X-rays emitted from the surface of the sample by the electron beam into a wavelength-dispersive type. It is detected by an X-ray spectrometer and displayed as a brightness modulated image on a CRT screen, for example. In analysis using this wavelength-dispersive X-ray spectrometer, it is necessary to maintain a constant positional relationship between the electron beam irradiation point (i.e., X-ray generation point) on the sample surface and the spectrometer.
The sample surface is set on a sample stage so that the surface of the sample polished into a flat surface is perpendicular to the Z-axis, and the sample surface is moved within a plane perpendicular to the Z-axis. Therefore, the sample stage is equipped with an X-axis drive mechanism and a Y-axis drive mechanism that move the sample in the X-axis direction perpendicular to the Z-axis and the Y-axis direction perpendicular to the Z-axis and the X-axis. Furthermore, a Z-axis moving mechanism for moving the sample in the Z-axis direction is provided, and the height of this Z-axis drive mechanism is adjusted so that the optimal position is set when the sample is set on the sample stage. This height adjustment can be done by, for example, monitoring the X-ray detection output from an X-ray spectrometer while irradiating the sample with an electron beam, and then moving the sample up and down using the Z-axis drive mechanism to find the position where the maximum output value is obtained. This is done by setting the sample height to . After completing such height adjustment, the aforementioned X-axis drive mechanism and Y-axis drive mechanism are controlled by scanning signals to perform two-dimensional scanning on the sample surface with the electron beam. However, if the moving direction of the sample stage is not strictly perpendicular to the Z-axis, or if the sample is not set correctly on the sample stage, the sample irradiated by the electron beam may be affected by the movement of the sample stage. The coordinate of the surface position in the Z-axis direction changes, and the generation point of the X-rays incident on the spectrometer is no longer kept constant. In order to eliminate such fluctuations in the X-ray generation point, conventionally, the optimal Z-axis coordinates are determined by height adjustment as described above for each point on the sample surface to be analyzed by X-rays, and then the X and Y axes are driven. The Z-axis coordinates are stored in correspondence with the X and Y coordinates of the mechanism, and the stored Z-axis coordinates are read out for each measurement location.
A method of controlling a shaft drive mechanism has been proposed. Although this type of control method makes it possible to correct the sample position, it requires a large amount of storage capacity, and since each point is read and controlled, the movement speed is slow, making it difficult to collect data for the entire measurement area. The disadvantage is that it takes a huge amount of time.

〔発明の目的〕[Purpose of the invention]

本発明は、以上の様な欠点を除去し、X線デー
タの収集のスピード化と試料移動中における試料
表面位置の変動による影響を除くための簡単な補
正方法を提供することを目的としている。
It is an object of the present invention to eliminate the above-mentioned drawbacks, speed up the collection of X-ray data, and provide a simple correction method for eliminating the influence of variations in the sample surface position during sample movement.

〔発明の構成〕[Structure of the invention]

本発明は、試料をX軸方向に一定量づつ繰り返
し往復移動させると共に、各往復移動のたびにX
軸方向と直交するY軸方向へ一定量移動させるこ
とにより、試料表面の二次元領域におけるX線強
度分布を測定する方法において、予め試料面内の
複数箇所において前記X線分光器に対して最適な
Z軸の座標を測定しておき、該測定値より求めた
一定変化速度によつて前記各X軸方向の移動期間
中に試料を連続的にZ軸方向に移動させることに
特徴がある。
In the present invention, the sample is repeatedly moved back and forth in the X-axis direction by a fixed amount, and each time the sample is
In a method of measuring the X-ray intensity distribution in a two-dimensional area of the sample surface by moving it a certain amount in the Y-axis direction perpendicular to the axial direction, it is optimal for the X-ray spectrometer to measure the X-ray intensity distribution at multiple locations on the sample surface in advance. The present invention is characterized in that the coordinates of the Z-axis are measured in advance, and the sample is continuously moved in the Z-axis direction during the movement period in each of the X-axis directions at a constant rate of change determined from the measured values.

〔発明の原理〕[Principle of the invention]

本発明においては、試料表面の微小な凹凸が、
面分析におけるZ軸方向の許容誤差よりも充分小
さく研磨されており、試料表面が略完全な平面に
形成されていることを前提とするものである。こ
のように試料表面を略完全な平面とみなせば、予
め測定範囲内の数箇所について高さ調整によるZ
軸位置の最適値を求めておくことによつて、Z軸
に垂直な平面からの試料平面の傾斜の程度を演算
によつて求めることができる。従つて、試料の移
動走査の期間中、該傾斜に伴うZ軸方向の位置変
化を打消すように一定の速度でZ軸移動機構を駆
動すれば、試料のZ軸方向に関する変位を容易に
補正することが可能となる。
In the present invention, minute irregularities on the sample surface are
This is based on the premise that the sample surface is polished to a value sufficiently smaller than the tolerance in the Z-axis direction for surface analysis, and that the sample surface is formed into a substantially perfect plane. If we consider the sample surface to be a nearly perfect plane, we can adjust the Z height at several points within the measurement range in advance.
By determining the optimum value of the axis position, the degree of inclination of the sample plane from the plane perpendicular to the Z-axis can be determined by calculation. Therefore, if the Z-axis moving mechanism is driven at a constant speed to cancel the position change in the Z-axis direction due to the tilting during the movement and scanning of the sample, the displacement of the sample in the Z-axis direction can be easily corrected. It becomes possible to do so.

〔実施例〕〔Example〕

以下に、本発明方法を図面を用いて説明する。
第1図は本発明方法を実施するXMAの概略構成
図である。1は電子線であり、該電子線1は対物
レンズ2によつて試料3の表面上に集束される。
試料3は試料ステージ4に載置されており、該試
料ステージ4にはX軸駆動機構5、Y軸駆動機構
6及びZ軸駆動機構7が取り付けられている。各
X,YおよびZ軸の駆動機構には、それぞれ独立
な駆動部8,9および10が接続されており、制
御装置11からの駆動命令信号によつて夫々独立
に駆動するように構成されている。12は試料ス
テージ4を制御装置11を介してX,YおよびZ
軸を手動で移動するための手動操作器である。1
3は電子線1を試料3に照射した場合に放射され
るX線14を集光するための分光結晶であり、該
分光結晶13より分光された特定波長のX線は、
X線検出器15で検出される。又、X線検出器1
5によつて検出されたX線の強度は電気信号(パ
ルス)に変換された後、X線計測回路16により
計測され、制御装置11を介して輝度変調信号と
して陰極線管(CRT)17の画面に表示される。
18はX線データを記憶するための記憶装置であ
る。19は試料3の表面全体を観察するための手
段としての光学顕微鏡であり、該光学顕微鏡は照
明ランプ20、ハーフミラー21、ミラー22、
凹面鏡23、凸面鏡24、接眼レンズ鏡筒25か
ら構成されており電子線経路を遮ることなく対物
レンズ2の近傍に配置されている。
The method of the present invention will be explained below using the drawings.
FIG. 1 is a schematic diagram of an XMA that implements the method of the present invention. 1 is an electron beam, and the electron beam 1 is focused onto the surface of a sample 3 by an objective lens 2 .
The sample 3 is placed on a sample stage 4, and an X-axis drive mechanism 5, a Y-axis drive mechanism 6, and a Z-axis drive mechanism 7 are attached to the sample stage 4. Independent drive units 8, 9, and 10 are connected to each of the X, Y, and Z axis drive mechanisms, and are configured to be driven independently by drive command signals from the control device 11. There is. 12 controls the sample stage 4 through the control device 11 in X, Y and Z.
This is a manual operating device for manually moving the axis. 1
3 is a spectroscopic crystal for condensing X-rays 14 emitted when the sample 3 is irradiated with the electron beam 1;
It is detected by the X-ray detector 15. Also, X-ray detector 1
The intensity of the X-rays detected by 5 is converted into an electric signal (pulse), then measured by an X-ray measurement circuit 16, and sent to the screen of a cathode ray tube (CRT) 17 as a brightness modulation signal via a control device 11. will be displayed.
18 is a storage device for storing X-ray data. 19 is an optical microscope as a means for observing the entire surface of the sample 3, and this optical microscope includes an illumination lamp 20, a half mirror 21, a mirror 22,
It is composed of a concave mirror 23, a convex mirror 24, and an eyepiece lens barrel 25, and is arranged near the objective lens 2 without blocking the electron beam path.

以上の様に構成された装置において、該装置を
用いて面分析する場合の試料移動方法について説
明する。先ず、試料3の表面凹凸が面分析に許容
されるZ軸方向の誤差(例えば±20μm最大)よ
りも充分小さくなるようにできる限り平面研磨し
た後、試料ステージ4に固定する。ここで、第2
図に示すごとく例えば試料3の表面内における長
方形の領域SについてX線の面分析を行うものと
する。初めに、領域Sの4つの角の近傍A,B,
C,D点についてZ軸移動機構による最適Z軸座
標を求める。このZ軸座標の最適値を求める操作
には、前述した高さ調整による方法の他に次のよ
うな光学顕微鏡(OM)を利用する方法がある。
即ち、前述した高さ調整によつて試料上の1点例
えばA点についてZ軸移動機構7を手動操作器に
よつて最適状態に設定し、そのときのZ軸座標
(Za)を記憶装置18に記憶する。そして、この
状態でOMによる試料表面の観察を行い、OMの
焦点合わせを行う。次にX,Y軸移動機構によつ
て試料上のB点を電子線照射位置へ移動させ、
OMの焦点合わせ手段は固定したまま、Z軸移動
機構を変化させてOM像の焦点合わせを行い、こ
のときのZ軸座標(Zb)を記憶する。これはOM
の焦点深度が極めて短いことを利用したものであ
るが、同様な操作を繰り返してC点、D点に関す
る最適Z軸座標(Zc)、(Zd)を求めて記憶する。
In the apparatus configured as described above, a method for moving a sample when performing surface analysis using the apparatus will be described. First, the surface of the sample 3 is polished as much as possible so that the surface irregularities are sufficiently smaller than the error in the Z-axis direction (for example, ±20 μm maximum) allowed for surface analysis, and then fixed on the sample stage 4. Here, the second
As shown in the figure, for example, it is assumed that an X-ray area analysis is performed on a rectangular region S within the surface of the sample 3. First, the four corner neighborhoods A, B,
Find the optimal Z-axis coordinates for points C and D using the Z-axis moving mechanism. In addition to the height adjustment method described above, the following method of using an optical microscope (OM) can be used to find the optimal value of the Z-axis coordinate.
That is, the Z-axis moving mechanism 7 is set to the optimum state with respect to one point on the sample, for example, point A, by the above-mentioned height adjustment using a manual operation device, and the Z-axis coordinate (Za) at that time is stored in the storage device 18. to be memorized. Then, in this state, the sample surface is observed using the OM, and the OM is focused. Next, point B on the sample is moved to the electron beam irradiation position by the X and Y axis movement mechanism,
While the focusing means of the OM remains fixed, the Z-axis moving mechanism is changed to focus the OM image, and the Z-axis coordinate (Zb) at this time is stored. This is OM
The optimum Z-axis coordinates (Zc) and (Zd) for points C and D are obtained and stored by repeating similar operations.

面分析を行うための走査は、試料3の表面A点
を基点として試料ステージ4をA点からB点つま
りX軸方向に一定距離ステツプ状に移動し、この
移動期間中に各座標位置におけるX線強度をX線
検出器15によつて検出し制御装置11を介して
記憶装置18に記憶する。そしてX軸一行分の計
測が終了した時点で、Y軸方向へ1ステツプ移動
させた後前述したようなX軸方向のステツプ状走
査を繰り返して各座標位置におけるX線検出器1
5の出力を記憶装置18に記憶する。そして同様
な動作を繰り返すことによつて最終的には領域S
内のX線強度分布の測定が完了する。
Scanning for surface analysis is performed by moving the sample stage 4 stepwise from point A to point B, that is, in the X-axis direction, using point A on the surface of the sample 3 as a base point, and during this movement period, the The radiation intensity is detected by the X-ray detector 15 and stored in the storage device 18 via the control device 11. When the measurement for one row on the X-axis is completed, the X-ray detector 1 is moved one step in the Y-axis direction, and the step-like scanning in the X-axis direction as described above is repeated to move the X-ray detector 1 at each coordinate position.
5 is stored in the storage device 18. Then, by repeating the same operation, finally the area S
The measurement of the X-ray intensity distribution within is completed.

今、X軸移動機構6による駆動速度をVx、点
A,B間の高さ補正に必要なZ軸移動機構7によ
る駆動速度をV′z、点A,B間の長さをLx、点
AC間の長さをLyとすると次の関係式が成り立
つ。
Now, the driving speed by the X-axis moving mechanism 6 is Vx, the driving speed by the Z-axis moving mechanism 7 required for height correction between points A and B is V'z, the length between points A and B is Lx, and the point
If the length between AC is Ly, the following relational expression holds true.

V′z=Zb−Za/Lx 又、任意のY座標位置(y)でX軸に沿つた高さ
補正に必要なZ軸移動機構7による駆動速度Vz
は次の関係式で表わされる。
V'z=Zb-Za/Lx Also, the driving speed Vz by the Z-axis moving mechanism 7 required for height correction along the X-axis at an arbitrary Y-coordinate position (y)
is expressed by the following relational expression.

Vz={(Zb−Za)+(Zd−Zb−Zc+Za)y
/Ly}/LxVx 従つて、各X軸方向のステツプ状走査を行う毎
に上式を満足する速度VzでZ軸移動機構7を駆
動すれば、測定領域Sの全範囲に渡つて高さ補正
を行うことができる。第1図のXMAにおける制
御装置11には、予め上式を満足する速度Vzを
演算するプログラムが与えられており、各繰り返
し走査毎に速度Vzが演算されるように構成され
ている。
Vz={(Zb−Za)+(Zd−Zb−Zc+Za)y
/Ly}/LxVx Therefore, if the Z-axis moving mechanism 7 is driven at a speed Vz that satisfies the above formula every time a stepwise scan in the X-axis direction is performed, the height can be corrected over the entire measurement area S. It can be performed. The control device 11 in the XMA of FIG. 1 is given in advance a program for calculating the speed Vz that satisfies the above equation, and is configured to calculate the speed Vz for each repeated scan.

〔効果〕〔effect〕

以上の様に本発明によれば、X線マイクロアナ
ライザー等における試料の二次元面分析を行う場
合に、試料移動に伴う試料表面の電子ビーム照射
点位置と分光器との位置関係を、X線データ収集
に要する時間を大幅に長くすることなく簡易に一
定に保つことのできるX線マイクロアナライザー
等における試料移動方法を提供することができ
る。
As described above, according to the present invention, when performing two-dimensional surface analysis of a sample with an It is possible to provide a method for moving a sample in an X-ray microanalyzer or the like that can easily keep the time required for data collection constant without significantly increasing the time required for data collection.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は本発明方法を適用する装置を示す構成
略図、第2図は本発明方法を説明するための図で
ある。 1:電子線、2:対物レンズ、3:試料、4:
試料ステージ、5:X軸駆動機構、6:Y軸駆動
機構、7:Z軸駆動機構、8:X軸駆動部、9:
Y軸駆動部、10:Z軸駆動部、11:制御装
置、12:手動操作器、13:分光結晶、14:
X線、15:X線検出器、16:X線計測回路、
17:CRT、18:記憶装置、19:光学顕微
鏡、20:ランプ、21:ハーフミラー、22:
ミラー、23:凹面鏡、24:凸面鏡、25:接
眼レンズ鏡筒。
FIG. 1 is a schematic configuration diagram showing an apparatus to which the method of the present invention is applied, and FIG. 2 is a diagram for explaining the method of the present invention. 1: Electron beam, 2: Objective lens, 3: Sample, 4:
Sample stage, 5: X-axis drive mechanism, 6: Y-axis drive mechanism, 7: Z-axis drive mechanism, 8: X-axis drive section, 9:
Y-axis drive section, 10: Z-axis drive section, 11: Control device, 12: Manual operation device, 13: Spectroscopic crystal, 14:
X-ray, 15: X-ray detector, 16: X-ray measurement circuit,
17: CRT, 18: Storage device, 19: Optical microscope, 20: Lamp, 21: Half mirror, 22:
Mirror, 23: Concave mirror, 24: Convex mirror, 25: Eyepiece lens barrel.

Claims (1)

【特許請求の範囲】[Claims] 1 試料を光軸(Z軸)と垂直なX軸方向と該X
軸方向と直交するY軸方向へ移動させ、該試料に
電子線を照射し、該電子線に照射される試料表面
からのX線を波長分散型のX線分光器で測定する
方法において、予め試料面内の複数箇所において
前記X線分光器に対して最適な試料のZ軸位置を
測定しておき、試料の前記X軸方向の移動期間中
に、該測定値より求めた一定速度によつて該試料
をZ軸方向に移動させることを特徴とするX線マ
イクロアナライザーにおける試料移動方法。
1 Place the sample in the X-axis direction perpendicular to the optical axis (Z-axis) and the
In a method in which the sample is moved in the Y-axis direction perpendicular to the axial direction, the sample is irradiated with an electron beam, and the X-rays from the sample surface irradiated with the electron beam are measured using a wavelength-dispersive X-ray spectrometer. The optimal Z-axis position of the sample with respect to the X-ray spectrometer is measured at multiple locations on the sample surface, and during the period of movement of the sample in the X-axis direction, the position is determined at a constant speed determined from the measured values. A method for moving a sample in an X-ray microanalyzer, characterized in that the sample is moved in the Z-axis direction.
JP58026005A 1983-02-18 1983-02-18 Sample movement in x-ray microanalyzer Granted JPS59151739A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58026005A JPS59151739A (en) 1983-02-18 1983-02-18 Sample movement in x-ray microanalyzer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58026005A JPS59151739A (en) 1983-02-18 1983-02-18 Sample movement in x-ray microanalyzer

Publications (2)

Publication Number Publication Date
JPS59151739A JPS59151739A (en) 1984-08-30
JPS6352424B2 true JPS6352424B2 (en) 1988-10-19

Family

ID=12181576

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58026005A Granted JPS59151739A (en) 1983-02-18 1983-02-18 Sample movement in x-ray microanalyzer

Country Status (1)

Country Link
JP (1) JPS59151739A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0619967B2 (en) * 1986-12-01 1994-03-16 日本電子株式会社 Sample position setting method for X-ray microanalyzer, etc.

Also Published As

Publication number Publication date
JPS59151739A (en) 1984-08-30

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