JPS6410092B2 - - Google Patents
Info
- Publication number
- JPS6410092B2 JPS6410092B2 JP13937380A JP13937380A JPS6410092B2 JP S6410092 B2 JPS6410092 B2 JP S6410092B2 JP 13937380 A JP13937380 A JP 13937380A JP 13937380 A JP13937380 A JP 13937380A JP S6410092 B2 JPS6410092 B2 JP S6410092B2
- Authority
- JP
- Japan
- Prior art keywords
- pellet
- lead frame
- atmosphere
- resin
- wire bonding
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W95/00—Packaging processes not covered by the other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
- H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink
Landscapes
- Wire Bonding (AREA)
Description
本発明は、リードフレームを用いる樹脂封止タ
イプの半導体装置の組立製造方法に係わり、特に
該リードフレームの搬送に関するものである。
従来、トランジスタ、集積回路（IC）などリ
ードフレームを用いる樹脂封止タイプの半導体装
置の組立製造工程は、工程毎に分離され、ダイボ
ンデイング−ワイヤボンデイング工程間、ワイヤ
ボンデイング−トランスフアモールド工程間のリ
ードフレームの搬送は金属製のマガジン（または
トレイ）を用いて行なわれてきたが、一旦、ダイ
ボンデイングまたはワイヤボンデイングの際加熱
されたリードフレームおよびペレツトが搬送途中
に大気中で冷却されることによりペレツト上面に
形成されたリン硅酸ガラス（PSG）などのパツ
シベーシヨン皮膜が大気中の水分を吸湿させてい
た。
そのためトランスフアモールド工程では、ペレ
ツトを樹脂封止する直前に、150〜200℃×２〜４
時間程度の加熱を行なつて上記工程間の搬送途中
で吸湿した水分を放出し、樹脂のなじみ性等を良
好にする目的でベイキングを必要としていた。
ところが最近の省力および高速化の要請により
半導体装置の組立製造工程を連続化した自動化一
貫ラインシステムが提案されるようになると、長
時間の加熱を要するプレベイクはラインバランス
上時間ロスが大きく、ひいては稼動率の低下原因
ともなるなど、却つて高速化の阻害原因の一つと
して考えられるようになつてきた。一方、上記難
点を解消するためプレベイク時間を短くして該ラ
インシステムに導入することも考えられるが、こ
の場合にはペレツト表面に吸湿された水分の影響
によつて出来上がつた半導体装置の信頼性が低下
し、特に温度サイクルテストでのワイヤオープン
不良や耐湿性通電テストでの配線（たとえばアル
ミニウム）の電蝕不良が増大するという難点があ
る。
本発明者はかかる点に鑑みて研究を進めたとこ
ろ、ペレツト上面に形成されるパツシベーシヨン
膜たとえばPSGは非常に水分を吸収しやすく、
加熱処理後の冷却では水分の吸湿性が特に高いこ
と、100℃での加温のみでは却つて水分吸着量が
多くなることを見出し、窒素ガス、乾燥空気、真
空に加熱処理後ペレツトを保管しておいたところ
下表の結果を得た。
The present invention relates to a method for assembling and manufacturing a resin-sealed type semiconductor device using a lead frame, and particularly to transportation of the lead frame. Conventionally, the assembly and manufacturing process for resin-sealed semiconductor devices using lead frames, such as transistors and integrated circuits (ICs), has been separated by process, and there are two processes: between die bonding and wire bonding, and between wire bonding and transfer molding. Lead frames have been transported using metal magazines (or trays), but once the lead frames and pellets are heated during die bonding or wire bonding, they are cooled in the atmosphere during transport. A passivation film such as phosphosilicate glass (PSG) formed on the top of the pellet absorbed moisture from the atmosphere. Therefore, in the transfer molding process, immediately before sealing the pellets with resin,
Baking was required to release moisture absorbed during transportation between the above steps by heating for about an hour, and to improve the compatibility of the resin. However, due to the recent demand for labor saving and speeding up, automated integrated line systems that serialize the assembly and manufacturing process of semiconductor devices have been proposed, and pre-baking, which requires long heating times, results in a large time loss due to line balance, and as a result, it becomes difficult to operate. In fact, it has come to be considered as one of the causes of impediments to speeding up, as it can cause a decrease in speed. On the other hand, in order to solve the above-mentioned difficulties, it may be possible to shorten the pre-bake time and introduce it into the line system. However, there are disadvantages in that wire open defects in temperature cycle tests and electrolytic corrosion defects of wiring (for example, aluminum) in moisture-resistant current tests increase. In view of this point, the present inventor conducted research and found that the passivation film, such as PSG, formed on the upper surface of the pellet is very easy to absorb moisture.
We found that cooling after heat treatment has a particularly high moisture absorption capacity, and heating alone at 100°C increases the amount of moisture adsorption, so we stored the pellets after heat treatment in nitrogen gas, dry air, and vacuum. The results shown in the table below were obtained.
【表】
(注) 測定法は真空中でのガス放出テスト
による。
本発明はかかる知見に基づいてなされたもの
で、リードフレームのペレツト載置部にペレツト
を固着するダイボンデイング工程および前記ペレ
ツトの電極と前記ペレツト載置部の周辺に形成さ
れたリードとをワイヤにて接続するワイヤボンデ
イング工程の何れか一方の工程から、前記ペレツ
トを樹脂にて封止するトランスフアモールド工程
に至るまで、前記リードフレームの搬送を不活性
ガス、乾燥雰囲気、真空から成る雰囲気より選ば
れた環境下で行なうことを特徴とする半導体装置
の組立製造方法を提供し、もつて半導体装置製造
を高速化すると共に信頼性の高い半導体装置を提
供することを目的とするものである。
以下図面に基づいて本発明の一実施例を詳細に
説明する。
図面中１で示すダイボンデイング工程にて、ペ
レツトとリードフレームのペレツト載置部の間で
ろう材を挾持させ、430℃程度の加熱でもつてろ
う材を溶融し、ペレツト載置部へペレツトを固着
する。次いで２の搬送工程では、ダイボンデイン
グ装置とワイヤボンデイング装置の間に形成され
かつ両端には不活性ガスまたは乾燥ガスによりエ
アーカーテンが形成されさらに内部には不活性ガ
スまたは乾燥ガスが充満されているトンネルの一
端よりリードフレームを挿入し、水分が付着しな
いよう他端まで搬送する。尚、ここでは、外部雰
囲気（大気）からトンネルの内部の乾燥ガスとの
遮蔽は上記の仕方に限られるものでない。またリ
ードフレームがトンネルの一端より挿入された
後、両端を密蔽して、トンネル内部を真空にして
もよいものである。次いで３のワイヤボンデイン
グ工程にて、リードフレーム下面を320〜340℃程
度に加熱し、ペレツトとペレツト載置部の周辺に
形成されたリードとを接続する。続いて４の搬送
工程では、搬送工程２と同様の構造を有するトン
ネルの中でリードフレームの搬送を行なう。そし
て、５のトランスフアモールド工程でもつて、リ
ードフレーム上に固着されたペレツトを樹脂封止
する。
以上の実施例からも明らかなように本発明によ
れば、加熱処理工程（ダイボンデイング工程、ワ
イヤボンデイング工程）後のリードフレームの搬
送は不活性ガス、乾燥雰囲気、真空から成る雰囲
気より選ばれた環境下で行なわれるために、大気
中の水分、塵埃等のペレツト表面への付着を防止
でき半導体装置としての信頼性の向上が可能とな
る。また、加熱処理工程の熱が共用できベイキン
グが不用となるので半導体装置製造の高速化をは
かることも可能となる。
尚、本発明は、特にトランスフアモールド工程
５前のワイヤボンデイング工程３−トランスフア
モールド工程５の間のリードフレームの搬送を上
記環境下で行なつて、水分がペレツト表面に付着
したまま樹脂封止するのを防止するようにしても
よいものである。[Table] (Note) Measurement method is based on gas release test in vacuum.
The present invention has been made based on this knowledge, and includes a die bonding process for fixing pellets to the pellet placement portion of a lead frame, and a die bonding process for bonding the electrodes of the pellets and the leads formed around the pellet placement portion to wires. The lead frame is transported in an atmosphere selected from among an inert gas, a dry atmosphere, and a vacuum, from either one of the wire bonding processes for connecting the leads to the transfer molding process for sealing the pellets with resin. It is an object of the present invention to provide a method for assembling and manufacturing a semiconductor device, which is characterized in that it is carried out under a controlled environment, thereby speeding up semiconductor device manufacturing and providing a highly reliable semiconductor device. An embodiment of the present invention will be described in detail below based on the drawings. In the die bonding process shown in 1 in the drawing, the brazing metal is sandwiched between the pellet and the pellet placement part of the lead frame, and the brazing metal is melted by heating to about 430℃, and the pellet is fixed to the pellet placement part. do. Next, in the second conveyance step, an air curtain is formed between the die bonding device and the wire bonding device, and an inert gas or dry gas is formed at both ends, and the inside is filled with the inert gas or dry gas. Insert the lead frame from one end of the tunnel and transport it to the other end to prevent moisture from adhering to it. Note that here, the method of shielding the dry gas inside the tunnel from the external atmosphere (atmosphere) is not limited to the above method. Further, after the lead frame is inserted from one end of the tunnel, both ends may be sealed and the inside of the tunnel may be evacuated. Next, in the wire bonding step (3), the lower surface of the lead frame is heated to about 320 to 340 DEG C., and the pellets are connected to the leads formed around the pellet placement section. Subsequently, in the transport step 4, the lead frame is transported in a tunnel having the same structure as the transport step 2. Then, in the transfer molding step 5, the pellets fixed on the lead frame are sealed with resin. As is clear from the above examples, according to the present invention, the lead frame is transported after the heat treatment process (die bonding process, wire bonding process) in an atmosphere selected from among an inert gas, a dry atmosphere, and a vacuum. Since the process is carried out in an environment, it is possible to prevent atmospheric moisture, dust, etc. from adhering to the pellet surface, thereby making it possible to improve the reliability of the semiconductor device. Furthermore, since the heat of the heat treatment process can be shared and baking is unnecessary, it is also possible to speed up the production of semiconductor devices. In addition, the present invention is particularly advantageous in that the lead frame is transported under the above environment between the wire bonding step 3 and the transfer molding step 5 before the transfer molding step 5, and the resin sealing is performed while moisture remains attached to the pellet surface. It may also be possible to prevent it from stopping.
図面は、本発明に係わる半導体装置の組立製造
工程の説明図である。
１……ダイボンデイング工程、３……ワイヤボ
ンデイング工程、５……トランスフアモールド工
程。
The drawings are explanatory diagrams of the assembly and manufacturing process of a semiconductor device according to the present invention. 1...Die bonding process, 3...Wire bonding process, 5...Transfer molding process.
Claims (1)
を固着するダイボンデイング工程および前記ペレ
ツトの電極と前記ペレツト載置部の周辺に形成さ
れたリードとをワイヤにて接続するワイヤボンデ
イング工程の何れか一方の工程から、前記ペレツ
トを樹脂にて封止するトランスフアモールド工程
に至るまで、前記リードフレームの搬送を不活性
ガス、乾燥雰囲気、真空から成る雰囲気より選ば
れた環境下で行なうことを特徴とする半導体装置
の組立製造方法。1. Either a die bonding process of fixing the pellet to the pellet placement part of the lead frame, or a wire bonding process of connecting the electrode of the pellet to the lead formed around the pellet placement part with a wire. A semiconductor characterized in that the lead frame is transported in an environment selected from an atmosphere consisting of an inert gas, a dry atmosphere, and a vacuum, up to a transfer molding process in which the pellet is sealed with a resin. Equipment assembly and manufacturing method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13937380A JPS5763833A (en) | 1980-10-07 | 1980-10-07 | Fabrication of semicondutor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13937380A JPS5763833A (en) | 1980-10-07 | 1980-10-07 | Fabrication of semicondutor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5763833A JPS5763833A (en) | 1982-04-17 |
| JPS6410092B2 true JPS6410092B2 (en) | 1989-02-21 |
Family
ID=15243805
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13937380A Granted JPS5763833A (en) | 1980-10-07 | 1980-10-07 | Fabrication of semicondutor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5763833A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63314837A (en) * | 1987-06-18 | 1988-12-22 | Mitsubishi Electric Corp | Semiconductor manufacturing equipment |
| JPS63314839A (en) * | 1987-06-18 | 1988-12-22 | Mitsubishi Electric Corp | Semiconductor manufacturing equipment |
-
1980
- 1980-10-07 JP JP13937380A patent/JPS5763833A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5763833A (en) | 1982-04-17 |
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