JPS6410596B2 - - Google Patents
Info
- Publication number
- JPS6410596B2 JPS6410596B2 JP10006180A JP10006180A JPS6410596B2 JP S6410596 B2 JPS6410596 B2 JP S6410596B2 JP 10006180 A JP10006180 A JP 10006180A JP 10006180 A JP10006180 A JP 10006180A JP S6410596 B2 JPS6410596 B2 JP S6410596B2
- Authority
- JP
- Japan
- Prior art keywords
- tank
- etching
- pipe
- liquid
- constant temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000005530 etching Methods 0.000 claims description 45
- 239000000126 substance Substances 0.000 claims description 31
- 239000007788 liquid Substances 0.000 claims description 22
- 239000004065 semiconductor Substances 0.000 claims description 13
- 239000000758 substrate Substances 0.000 claims description 13
- 238000005260 corrosion Methods 0.000 claims description 3
- 230000007797 corrosion Effects 0.000 claims description 3
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 8
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 8
- 239000004809 Teflon Substances 0.000 description 6
- 229920006362 Teflon® Polymers 0.000 description 6
- 238000000034 method Methods 0.000 description 5
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 4
- 229960000583 acetic acid Drugs 0.000 description 4
- 239000012362 glacial acetic acid Substances 0.000 description 4
- 229910017604 nitric acid Inorganic materials 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
Landscapes
- ing And Chemical Polishing (AREA)
- Weting (AREA)
Description
【発明の詳細な説明】
本発明はエツチング装置に係り、特に恒温の薬
液により半導体基板のエツチングを行なう半導体
基板のエツチング装置に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an etching apparatus, and more particularly to a semiconductor substrate etching apparatus for etching a semiconductor substrate using a constant temperature chemical solution.
従来のエツチング槽は第1図に示した様にエツ
チング槽1の外壁を冷熱器2に於いて恒温化した
液3を循環させ、エツチング槽1内の薬液4の恒
温化をしていた。この方法だと、例えば、フツ
酸、硝酸、氷酢酸の混合薬液により半導体基板の
エツチングすると、そのエツチングの反応熱によ
り、前記混合薬液の温度が上昇するが、恒温化し
た液3との熱交換がエツチング槽1の外壁で行な
われても、反応熱が大きいため混合薬液4の恒温
化迄多大の時間を費やし、半導体基板の連続エツ
チング処理が出来ず、量産装置として使用出来な
いという欠点があつた。又、第2図に示す様に薬
液4を直接冷熱器2を通す方法も考えられるが前
記混合薬液の様に腐蝕性の高い薬液など使用出来
ない。 In the conventional etching tank, as shown in FIG. 1, a solution 3 kept at a constant temperature in a cooler 2 is circulated through the outer wall of the etching tank 1 to keep the temperature of the chemical solution 4 in the etching tank 1 constant. With this method, for example, when a semiconductor substrate is etched with a mixed chemical solution of hydrofluoric acid, nitric acid, and glacial acetic acid, the temperature of the mixed chemical solution rises due to the reaction heat of the etching. Even if etching is carried out on the outer wall of the etching tank 1, the heat of reaction is large, so it takes a long time to bring the mixed chemical solution 4 to a constant temperature, making it impossible to perform continuous etching of semiconductor substrates, and thus not being able to be used as a mass production device. Ta. Another possible method is to directly pass the chemical solution 4 through the cooler 2 as shown in FIG. 2, but it is not possible to use a highly corrosive chemical solution like the mixed chemical solution described above.
本発明はこれらの欠点を除去するためエツチン
グ槽内に例えばテフロンパイプ等を巻き込み、前
記パイプ内に恒温化を目的とした液を導入し薬液
のエツチング処理反応熱による温度上昇があつて
も薬液の恒温化を容易にし、半導体基板の連続エ
ツチング処理を可能にしたエツチング装置を提供
するものである。 In order to eliminate these drawbacks, the present invention involves, for example, a Teflon pipe or the like being wrapped in the etching tank, and a liquid for the purpose of constant temperature is introduced into the pipe, so that even if the temperature rises due to the reaction heat of the etching process of the chemical liquid, the chemical liquid can be kept at a constant temperature. The present invention provides an etching apparatus that facilitates constant temperature control and enables continuous etching of semiconductor substrates.
本発明の特徴は、半導体基板のエツチングを行
う薬品を入れるためのエツチング槽と、前記薬液
を恒温化するために該エツチング槽を囲む外槽
と、前記エツチング槽内に位置する耐腐蝕性のパ
イプとを備え、該エツチング槽内のパイプは該エ
ツチング槽内において該槽内の中央部を除く周辺
部に該槽の内壁にそつてその下方部から上方部に
いたつて設けられており、冷熱器と前記エツチン
グ槽内のパイプとは前記外槽を貫通せる第1の接
続パイプで接続されここを前記薬液を恒温化する
ための液が前記冷熱器より送り込まれ、前記エツ
チング槽内のパイプを経由した前記薬液を恒温化
するための液は前記エツチング槽の上部より該外
槽に流れ出すようにし、かつ、該外槽の底面部と
前記冷熱器とを第2のパイプで接続して前記薬液
を恒温化する液を該冷熱器に戻すようにした半導
体基板のエツチング装置にある。 The present invention is characterized by an etching bath for containing a chemical for etching semiconductor substrates, an outer bath surrounding the etching bath to keep the chemical at a constant temperature, and a corrosion-resistant pipe located inside the etching bath. The pipe in the etching tank is installed along the inner wall of the tank from the lower part to the upper part in the peripheral part of the etching tank except for the central part, and the pipe is provided with a cooler. and the pipe in the etching tank are connected by a first connecting pipe that passes through the outer tank, through which a liquid for constant temperature of the chemical solution is sent from the cooler and passes through the pipe in the etching tank. A liquid for constant temperature of the chemical solution is made to flow from the upper part of the etching tank into the outer tank, and a second pipe connects the bottom of the outer tank and the cooler to keep the chemical solution constant. A semiconductor substrate etching apparatus is provided in which a constant temperature liquid is returned to the cooler.
以下図面により本発明を詳細に説明する。 The present invention will be explained in detail below with reference to the drawings.
第3図および第4図はそれぞれ本発明の実施例
を示す概略図であつて、1はエツチング槽、2は
冷熱器、3は恒温化した液、4はフツ酸、硝酸、
氷酢酸の混合薬液である。5は恒温化した液を通
すテフロンパイプでありこれはエツチング槽内の
パイプ5′と第1の接続パイプ5″と第2の接続パ
イプ5とから成つている。 3 and 4 are schematic diagrams showing embodiments of the present invention, respectively, in which 1 is an etching tank, 2 is a cooler, 3 is a constant temperature liquid, 4 is hydrofluoric acid, nitric acid,
It is a mixed chemical solution of glacial acetic acid. Reference numeral 5 denotes a Teflon pipe through which a constant-temperature solution passes, and this pipe consists of a pipe 5' in the etching tank, a first connecting pipe 5'', and a second connecting pipe 5.
本実施例では冷熱器2によつて恒温化された液
3はテフロンパイプ内に導入され、第1の接続パ
イプ5″を通つてエツチング槽1内のパイプ5′を
通り、混合薬液4の恒温化を行ない第2の接続パ
イプ5を通つて冷熱器へ戻り、循環される。こ
の様な構造になつているからその効果としては混
合薬液4が、半導体基板のエツチング処理を行な
つた時の処理反応熱により温度上昇があつても、
恒温化した液3と混合薬液4との熱交換が、エツ
チング槽外壁とテフロンパイプの表面積部に於い
て行なわれるため、薬液4の恒温化がおのずと容
易になり、半導体基板の連続エツチング処理が可
能である。すなわち薬液はパイプおよび外槽の両
者から恒温化されるからその効率、スピードは大
となり、もつて常に所定の温度で処理をすること
ができる。又、この恒温化するための液はパイプ
から外槽に流れ出し、ここから第2のパイプで冷
熱器に戻すから外槽用の液と内槽のパイプ用の液
とをそれぞれ用意する必要がない。さらに内槽内
におけるパイプの配置は、第3図、第4図に示さ
れているように、中央部を除く周辺部に槽の内壁
にそつて下方部から上方部にしたがつて設けられ
ている。このように下方部から上方部に設けられ
ていることにより上記効率がさらに促進される。
又、ここで中央部を除く周辺部にパイプを設ける
ことによりこの中央部に半導体基板を浸してエツ
チングをすることを可能にする。しかも、冷熱器
によつて恒温化された液は外槽を貫通させる第1
の接続パイプを通つてエツチング槽内のパイプに
導入される。したがつてこの第1の接続パイプに
より、すなわちそこを流れる所定の温度に恒温化
された該第1の接続パイプを流れる液により、外
槽にたまつている液もより所定の温度に近づくこ
とができる。これにより槽内のパイプからのおよ
び外槽からの両者の恒温化はより近い温度により
行なわれるから、エツチング液の恒温化はこの点
からも効率的に行なわれる。 In this embodiment, the liquid 3 that has been kept at a constant temperature by the cooler 2 is introduced into a Teflon pipe, passes through a first connecting pipe 5'' and a pipe 5' in the etching tank 1, and is then kept at a constant temperature of the mixed chemical solution 4. The chemical mixture 4 returns to the cooler through the second connecting pipe 5 and is circulated.The effect of this structure is that the mixed chemical solution 4 is Even if the temperature rises due to processing reaction heat,
Since heat exchange between the temperature-controlled solution 3 and the mixed chemical solution 4 takes place on the outer wall of the etching tank and the surface area of the Teflon pipe, it becomes easy to maintain the temperature of the chemical solution 4, allowing continuous etching of semiconductor substrates. It is. That is, since the chemical solution is kept at a constant temperature from both the pipe and the outer tank, its efficiency and speed are high, and the treatment can always be carried out at a predetermined temperature. In addition, this liquid for constant temperature flows out from the pipe to the outer tank, and from there it is returned to the cooler through the second pipe, so there is no need to prepare separate liquid for the outer tank and for the inner tank pipe. . Furthermore, as shown in Figures 3 and 4, the pipes are arranged in the inner tank along the inner wall of the tank from the lower part to the upper part at the periphery excluding the central part. There is. The above-mentioned efficiency is further promoted by being provided from the lower part to the upper part in this manner.
Further, by providing a pipe in the peripheral part except for the central part, it is possible to immerse the semiconductor substrate in this central part and perform etching. Moreover, the liquid whose temperature is constant by the cooler is passed through the outer tank.
is introduced into the pipe in the etching tank through the connecting pipe. Therefore, due to this first connecting pipe, that is, the liquid flowing through the first connecting pipe, which is kept at a constant temperature at a predetermined temperature, also brings the liquid accumulated in the outer tank closer to the predetermined temperature. I can do it. As a result, the temperatures of both the pipes inside the bath and those from the outer bath can be maintained at closer temperatures, so that the temperature of the etching solution can be maintained efficiently from this point of view as well.
以上説明した様に、本発明は従来の方法と比べ
て多くの利点を有するものである。なお、本発明
の実施例に於いてはテフロンパイプをらせん状に
巻き込むという構造とし、フツ酸、硝酸、氷酢酸
の混合薬液により半導体基板をエツチングすると
いう工程に使用するとしたが、本発明の特徴であ
るエツチング槽内に恒温化の目的で、前記薬液に
対して、耐腐蝕性のパイプを非処理物処理可能な
状態で巻き込むという構造を有する限り形状で、
材質、工程の如何に関係なく本特許の請求範囲が
及ぶ事はいうまでもない。 As explained above, the present invention has many advantages over conventional methods. In the embodiments of the present invention, a Teflon pipe was wound into a spiral structure and used in the process of etching a semiconductor substrate with a mixed chemical solution of hydrofluoric acid, nitric acid, and glacial acetic acid. As long as it has a structure in which a corrosion-resistant pipe is wrapped around the chemical solution in a state capable of processing non-processed materials for the purpose of constant temperature in the etching tank,
Needless to say, the scope of the claims of this patent extends regardless of the material or process.
第1図及び第2図はそれぞれ従来のエツチング
装置の概略図、第3図及び第4図はそれぞれ本発
明の実施例を示す概略図である。
なお図において、1……エツチング槽、2……
冷熱器、3……恒温化した液、4……フツ酸、硝
酸、氷酢酸の混合薬液、5……恒温化した液を通
すテフロンパイプ、5′……エツチング槽内のパ
イプ、5″……第1の接続パイプ、5……第2
の接続パイプである。又図中矢印は恒温化した液
の流れを示すものである。
FIGS. 1 and 2 are schematic diagrams of a conventional etching apparatus, respectively, and FIGS. 3 and 4 are schematic diagrams showing an embodiment of the present invention, respectively. In the figure, 1... etching tank, 2...
Cooler, 3... Constant temperature liquid, 4... Mixed chemical solution of hydrofluoric acid, nitric acid, and glacial acetic acid, 5... Teflon pipe for passing the constant temperature liquid, 5'... Pipe in the etching tank, 5''... ...first connection pipe, 5...second
This is the connecting pipe. Further, the arrows in the figure indicate the flow of the constant temperature liquid.
Claims (1)
ためのエツチング槽と、前記薬液を恒温化するた
めに該エツチング槽を囲む外槽と、前記エツチン
グ槽内に位置する耐腐蝕性のパイプとを備え、該
エツチング槽内のパイプは該エツチング槽内にお
いて該槽内の中央部を除く周辺部に該槽の内壁に
そつてその下方部から上方部にいたつて設けられ
ており、冷熱器と前記エツチング槽内のパイプと
は前記外槽を貫通せる第1の接続パイプで接続さ
れここを前記薬液を恒温化するための液が前記冷
熱器より送り込まれ、前記エツチング槽内のパイ
プを経由した前記薬液を恒温化するための液は前
記エツチング槽の上部より該外槽に流れ出すよう
にし、かつ、該外槽の底面部と前記冷熱器とを第
2のパイプで接続して前記薬液を恒温化する液を
該冷熱器に戻すようにしたことを特徴とする半導
体基板のエツチング装置。1. An etching tank for containing a chemical for etching semiconductor substrates, an outer tank surrounding the etching tank to keep the temperature of the chemical solution constant, and a corrosion-resistant pipe located inside the etching tank. The pipes inside the etching tank are installed along the inner wall of the tank at the periphery of the tank, excluding the central part, from the lower part to the upper part. The pipe is connected to a first connecting pipe that penetrates the outer tank, and a liquid for constant temperature of the chemical liquid is sent from the cooler to this pipe, and the chemical liquid that has passed through the pipe in the etching tank is kept at a constant temperature. The liquid for making the chemical liquid flow out from the upper part of the etching tank into the outer tank, and the bottom part of the outer tank and the cooler are connected by a second pipe to supply the liquid for constant temperature of the chemical solution. A semiconductor substrate etching apparatus characterized in that the semiconductor substrate is returned to the cooler.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10006180A JPS5726173A (en) | 1980-07-22 | 1980-07-22 | Etching apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10006180A JPS5726173A (en) | 1980-07-22 | 1980-07-22 | Etching apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5726173A JPS5726173A (en) | 1982-02-12 |
| JPS6410596B2 true JPS6410596B2 (en) | 1989-02-22 |
Family
ID=14263947
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10006180A Granted JPS5726173A (en) | 1980-07-22 | 1980-07-22 | Etching apparatus |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5726173A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4572623B2 (en) * | 2004-08-23 | 2010-11-04 | パナソニック株式会社 | Capacitor electrode foil manufacturing equipment |
-
1980
- 1980-07-22 JP JP10006180A patent/JPS5726173A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5726173A (en) | 1982-02-12 |
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