JPH0112667B2 - - Google Patents
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- Publication number
- JPH0112667B2 JPH0112667B2 JP59071876A JP7187684A JPH0112667B2 JP H0112667 B2 JPH0112667 B2 JP H0112667B2 JP 59071876 A JP59071876 A JP 59071876A JP 7187684 A JP7187684 A JP 7187684A JP H0112667 B2 JPH0112667 B2 JP H0112667B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- polyether sulfone
- transparent conductive
- conductive film
- resistance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Description
【発明の詳細な説明】
本発明は高分子に酸化インジウムを主体とする
導電膜(以下ITO膜という。)を付与した、液晶
素子用透明電極に用いる透明導電性フイルムの製
造方法に関するものである。従来、透明導電性フ
イルムは主にポリエステルフイルムをベースと
し、エレクトロルミネツセンスデイスプレイやエ
レクトロクロミツクデイスプレイの透明電極、デ
イフロスタ、透明ヒータ等のの面発熱体や、タツ
チパネル等の面スイツチ、赤外線反射膜、及び透
明フレキシブル回路等に広く用いられているが、
最近は液晶表示素子への適用も検討されている。[Detailed Description of the Invention] The present invention relates to a method for manufacturing a transparent conductive film for use in transparent electrodes for liquid crystal devices, in which a conductive film mainly composed of indium oxide (hereinafter referred to as an ITO film) is added to a polymer. . Traditionally, transparent conductive films are mainly based on polyester films, and are used in transparent electrodes of electroluminescent displays and electrochromic displays, surface heating elements such as day frosters and transparent heaters, surface switches such as touch panels, and infrared reflective films. It is widely used in transparent flexible circuits, etc.
Recently, application to liquid crystal display elements is also being considered.
透明導電性フイルムは、フイルム状の電極を使
用することにより素子を薄型化できる点、生産工
程において取り扱い易く打抜き加工等も可能であ
る点、フイルム状素子材から連続生産が可能であ
りコスト面でも有利になるという点より注目され
ている。 Transparent conductive films are advantageous in that they can be made thinner by using film-shaped electrodes, are easy to handle during the production process and can be processed by punching, and can be produced continuously from film-shaped element materials, which is cost-effective. It is attracting more attention than because it is advantageous.
通常の透明導電性フイルムの要求性能としては
透明性がよいことがあげられる。さらに液晶用透
明電極として用いるためには、加工中に熱変形、
導電性不良、及び断線等を生じないことが必要で
ある。また、光学異方性を持たないことも偏光板
を用いる液晶表示素子には絶対に必要である。例
えば、光学異方性をもつ一軸延伸ポリエステルフ
イルムの場合、光学異方性の軸を液晶素子に用い
られる偏光板の軸と厳密に一致させなくてはなら
ず、作業性及び歩留りが非常に悪い。 Good transparency is one of the performance requirements for ordinary transparent conductive films. Furthermore, in order to use it as a transparent electrode for liquid crystals, thermal deformation and
It is necessary that poor conductivity and disconnection do not occur. Furthermore, it is absolutely necessary for a liquid crystal display element using a polarizing plate to have no optical anisotropy. For example, in the case of a uniaxially stretched polyester film that has optical anisotropy, the axis of optical anisotropy must strictly match the axis of the polarizing plate used in liquid crystal elements, resulting in very poor workability and yield. .
以上の性能をすべて満たす透明導電性フイルム
の基板フイルムとしては、透明性、耐熱性にすぐ
れ光学異方性のない点からポリエーテルサルホン
フイルムが最も適していると考え鋭意研究を行な
つた結果、良好なる透明導電性フイルムを得るこ
とができたので以下にその方法について述べる。 As a substrate film for a transparent conductive film that satisfies all of the above properties, we believe that polyether sulfone film is the most suitable film due to its excellent transparency, heat resistance, and lack of optical anisotropy.As a result, we conducted extensive research. Since a good transparent conductive film could be obtained, the method will be described below.
一般に、プラスチツクフイルム上に透明導電性
膜を形成する場合、蒸着法あるいはスパツタリン
グ法がよく用いられているが、ポリエーテルサル
ホンの場合、他のプラスチツク基板と同様の条件
では良好な特性を有する透明導電膜は形成できな
い。それは、ポリエーテルサルホンが他のプラス
チツクと次のような点で異なつているからであ
る。 Generally, when forming a transparent conductive film on a plastic film, vapor deposition or sputtering methods are often used, but in the case of polyethersulfone, a transparent conductive film with good properties under the same conditions as other plastic substrates is used. A conductive film cannot be formed. This is because polyether sulfone differs from other plastics in the following points.
ポリエーテルサルホンフイルムは透湿性が、ポ
リエステルフイルムの10数倍あり、蒸着法、スパ
ツタリング法のいずれにおいても真空槽中での作
業中のフイルム表面からの大量のガス発生がある
ため良質な透明導電膜が形成できない。また、ポ
リエーテルサルホン中には未反応モノマーが多量
に含まれており、脱ガスや導電膜形成の際にフイ
ルムが加熱されるとフイルム表面に析出し、導電
膜の密着性の低下等の原因となる。さらに、連続
式スパツタ機での生産を行なう場合には放出ガス
による真空度の低下により、連続的な生産が不可
能となる。 The moisture permeability of polyether sulfone film is ten times higher than that of polyester film, and in both vapor deposition and sputtering methods, a large amount of gas is generated from the film surface during work in a vacuum chamber, making it a good transparent conductor. A film cannot be formed. In addition, polyether sulfone contains a large amount of unreacted monomers, which deposit on the film surface when the film is heated during degassing or forming a conductive film, resulting in a decrease in the adhesion of the conductive film, etc. Cause. Furthermore, when producing with a continuous sputtering machine, the degree of vacuum decreases due to the released gas, making continuous production impossible.
薄膜形成時の放出ガスに関しては、ポリエーテ
ルサルホンフイルムをあらかじめ脱ガスを行うこ
とにより防げることを見出した。又、モノマーの
析出に関しては、アクリル系樹脂をポリエーテル
サルホンフイルムの片面もしくは両面にアンダー
コートすることにより防げることを見出した。 We have found that gas released during thin film formation can be prevented by degassing the polyether sulfone film in advance. It has also been found that monomer precipitation can be prevented by undercoating one or both sides of the polyether sulfone film with an acrylic resin.
前記の脱ガスに関しては、より完全に行うこと
により良好な透明導電膜が効率よく形成できる。
しかし、一方ポリエーテルサルホンフイルムに含
有されるこれらの物質は、フイルム中では可塑剤
として作用しフイルムに可撓性を付与している。
従つて、これらを完全に除去してしまうともろく
なり加工中のハンドリングにおいて折れや割れを
生じやすくなる。このような加工性の不良を生じ
ないためにはフイルムの伸びが10%以上ある状態
でなければならない。しかし20%以上になると導
電膜形成時の放出ガスのため良好な透明導電性フ
イルムは作製できない。 As for the above-mentioned degassing, a good transparent conductive film can be efficiently formed by performing it more completely.
However, on the other hand, these substances contained in the polyether sulfone film act as plasticizers in the film and impart flexibility to the film.
Therefore, if these are completely removed, the material becomes brittle and easily breaks or cracks when handled during processing. In order to avoid such poor processability, the film must have an elongation of 10% or more. However, if it exceeds 20%, a good transparent conductive film cannot be produced because of the gas released during the formation of the conductive film.
第1図にポリエーテルサルホンフイルムの脱ガ
ス処理日数と伸びの関係を示し、第2図には処理
日数と密着性の尺度となる耐ガーゼ摩耗性を示し
てある。第1図において伸びが10%以下ではフイ
ルムを2つに折り曲げた時、ワレを生ずる程もろ
くなるため好ましくない。従つて、伸びは10%以
上必要である。一方、第2図、アンダーコートを
しない場合では、ガーゼ摩耗後の抵抗変化が1.4
倍であるのに対し、アンダーコートをした場合、
脱ガスを1日以上処理すると抵抗変化はまつたく
なくきわめて良好であつた。以上のごとく、ポリ
エーテルホンフイルムの引張り伸びを10%以上と
なるように、脱ガス処理を行ないさらにアンダー
コートを付与すると密着力及びフレキシビリテイ
を備えた工業的に安定した透明導電フイルムを得
ることができる。 Figure 1 shows the relationship between the number of days of degassing treatment and elongation of polyether sulfone film, and Figure 2 shows the number of days of treatment and gauze abrasion resistance, which is a measure of adhesion. In FIG. 1, if the elongation is less than 10%, the film becomes brittle enough to crack when folded in two, which is not preferable. Therefore, elongation is required to be 10% or more. On the other hand, in Figure 2, when no undercoat is applied, the resistance change after gauze wear is 1.4.
However, if you apply an undercoat,
When degassing was carried out for one day or more, there was no noticeable change in resistance and the result was very good. As described above, by performing degassing treatment and further applying an undercoat so that the tensile elongation of the polyetherphone film is 10% or more, an industrially stable transparent conductive film with adhesion and flexibility can be obtained. be able to.
アクリル系樹脂を厚さ5μmで両面コートした、
ポリエーテルサルホンフイルム(100μ厚200mm
巾)をアルミ管にまき60℃の乾燥機にて8日間処
理した。その結果、フイルムの破断伸びは60%か
ら10%に減少し、かなり脱ガスされた状態になつ
ていた。このフイルムを用い連続蒸着装置にて、
ITOを蒸着したところ1.0m/minでフイルムを走
行させても真空度は1.0×10-4Torr以上にはなら
ず良好なる状態で蒸着することができた。この様
にして蒸着されたITOを180℃、1hrsの熱酸化を
行なつたところ、透明性導電性共に良好なITO膜
が得られた。特に耐摩耗性は良好であり、100
g/cm2のガーゼで100回摩擦後の抵抗変化はまつ
たくなかつた。なお、この透明導電膜を折り曲げ
てみたがフイルムが割れたり裂けたりすることは
なく、十分なフレキシビリテイを保持していた。
この透明導電フイルムを用い液晶パネルを作製し
たところ、加工性もよく、良好なるプラスチツク
パネルを得ることができた。 Both sides are coated with acrylic resin to a thickness of 5 μm.
Polyether sulfone film (100μ thickness 200mm
(width) was spread on an aluminum tube and treated in a dryer at 60°C for 8 days. As a result, the elongation at break of the film decreased from 60% to 10%, and the film was in a considerably degassed state. Using this film in a continuous vapor deposition device,
When ITO was deposited, even when the film was run at 1.0 m/min, the degree of vacuum did not exceed 1.0 x 10 -4 Torr, and deposition was possible in good conditions. When the ITO thus deposited was thermally oxidized at 180°C for 1 hour, an ITO film with good transparency and conductivity was obtained. Particularly good wear resistance, 100%
After rubbing 100 times with g/cm 2 gauze, there was no noticeable change in resistance. When this transparent conductive film was bent, it did not crack or tear, and it maintained sufficient flexibility.
When a liquid crystal panel was produced using this transparent conductive film, it was possible to obtain a good plastic panel with good workability.
実施例 2
アクリル系樹脂を厚さ5μにコーテイングした、
ポリエーテルサルホンフイルムを真空乾燥機に入
れ、1×10-3Torrまで真空を引きヨウ素ランプ
1燈にて36時間加熱処理した。その後真空を破
り、該フイルムの破断伸びを測定したところ10%
であつた。次に処理を行つたポリエーテルサルホ
ンフイルムをスパツタ装置にすばやくセツトし、
真空を1×10-8Torrまで引き、その後Ar及びO2
と導入し2×10-3TorrでITOの反応性スパツタ
を行なつた。この様にして得られた透明導電フイ
ルムは透明性、抵抗値共に良好であり、耐摩耗性
は100g/cm2のガーゼで100回摩擦後の抵抗変化は
まつたくなく、折り曲げても割れることなくフレ
キシビリテイも良好であつた。Example 2 Coated with acrylic resin to a thickness of 5μ,
The polyether sulfone film was placed in a vacuum dryer, vacuumed to 1×10 −3 Torr, and heated with one iodine lamp for 36 hours. After that, the vacuum was broken and the elongation at break of the film was measured and was 10%.
It was hot. Next, quickly set the treated polyether sulfone film on the sputtering device,
The vacuum was pulled down to 1×10 -8 Torr, then Ar and O 2
The reactive sputtering of ITO was carried out at 2×10 -3 Torr. The transparent conductive film obtained in this way has good transparency and resistance, and its abrasion resistance shows no change in resistance after 100 rubs with 100 g/cm 2 gauze, and does not break even when bent. Flexibility was also good.
比較例 1
アクリル系樹脂を厚さ5μmに両面コーテイング
した、ポリエーテルサルホンフイルム(100μ厚)
を200mアルミ管に巻き60℃にて10日間処理し連
続コーターにより、ITOを蒸着を行なつたところ
蒸着中にフイルムの切れを生じた。この場合、フ
イルム伸びは5%であり、これはポリエーテルサ
ルホンフイルムがもろくなつているためと思われ
る。蒸着後のフイルムを熱酸化し、透明導電フイ
ルムを作製したところ、透明導電性フイルムとし
ての性能は良好であるが、折り曲げた場合、割れ
を生じ後の加工に耐えられない状態であつた。Comparative Example 1 Polyether sulfone film (100 μm thick) coated with acrylic resin on both sides to a thickness of 5 μm
When the film was wrapped around a 200 m aluminum tube and treated at 60°C for 10 days, and ITO was vapor-deposited using a continuous coater, the film broke during vapor deposition. In this case, the film elongation was 5%, which is thought to be because the polyether sulfone film had become brittle. When the film after vapor deposition was thermally oxidized to produce a transparent conductive film, the performance as a transparent conductive film was good, but when it was bent, it cracked and could not withstand subsequent processing.
比較例 2
ポリエーテルサルホンフイルム(100μ厚)を
200mm巾アルミ管に巻きつけ60℃乾燥機にて8日
間処理した。このフイルムに実施例1と同じ条件
にて導電膜を形成した。この場合、耐摩耗性の検
討を行なうと抵抗変化が1.2倍と不良であつた。Comparative example 2 Polyether sulfone film (100μ thickness)
It was wrapped around a 200 mm wide aluminum tube and treated in a dryer at 60°C for 8 days. A conductive film was formed on this film under the same conditions as in Example 1. In this case, when the wear resistance was examined, the change in resistance was 1.2 times, which was poor.
比較例 3
アクリル系樹脂を厚さ5μmに両面コーテイング
したポリエーテルサルホンフイルム(100μ厚)
を200mアルミ管に巻き60℃にて5日間乾燥機に
て処理した。この場合、フイルム伸びは32%であ
つた。このフイルムに実施例1と同じ条件にて導
電膜を形成した。この場合、実施例1のシート抵
抗値が300Ω/□であつたのに対し、1000Ω/□
となり高抵抗化した。また耐擦過傷性も不良であ
つた。Comparative Example 3 Polyether sulfone film coated with acrylic resin on both sides to a thickness of 5 μm (100 μm thick)
was wrapped in a 200 m aluminum tube and treated in a dryer at 60°C for 5 days. In this case, the film elongation was 32%. A conductive film was formed on this film under the same conditions as in Example 1. In this case, the sheet resistance value of Example 1 was 300Ω/□, but 1000Ω/□
This resulted in high resistance. The scratch resistance was also poor.
以上の理由から引張り伸びが脱ガス後に10〜20
%となる条件で最もすぐれた特性を有する透明導
電性フイルムが得られた。 For the above reasons, the tensile elongation is 10 to 20 after degassing.
%, a transparent conductive film with the best properties was obtained.
第1図はポリエーテルサルホンフイルムの脱ガ
ス処理日数と伸びの変化の関係を示す図である。
第2図はポリエーテルサルホンフイルムの脱ガス
処理日数と耐ガーゼ摩耗との関係を示す図であ
り、縦軸はガーゼ摩耗の前後の抵抗の変化率で示
した図である。
FIG. 1 is a diagram showing the relationship between the number of days of degassing treatment and the change in elongation of polyether sulfone film.
FIG. 2 is a diagram showing the relationship between the number of days of degassing treatment of a polyethersulfone film and gauze abrasion resistance, and the vertical axis is a diagram showing the rate of change in resistance before and after gauze abrasion.
Claims (1)
コート層を片面もしくは両面に設け、該アンダー
コートしたポリエーテルサルホンフイルムの引張
り伸びが10〜20%になるように脱ガスを行い、更
にその上に酸化インジウムを主成分とする膜を形
成することを特徴とする透明導電性フイルムの製
造方法。1 An undercoat layer is provided on one or both sides of a polyether sulfone film, degassed so that the tensile elongation of the undercoated polyether sulfone film becomes 10 to 20%, and further indium oxide is added on top of the undercoat layer. A method for producing a transparent conductive film, the method comprising forming a film containing as a main component.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59071876A JPS60217147A (en) | 1984-04-12 | 1984-04-12 | Method for manufacturing transparent conductive film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59071876A JPS60217147A (en) | 1984-04-12 | 1984-04-12 | Method for manufacturing transparent conductive film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60217147A JPS60217147A (en) | 1985-10-30 |
| JPH0112667B2 true JPH0112667B2 (en) | 1989-03-01 |
Family
ID=13473155
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59071876A Granted JPS60217147A (en) | 1984-04-12 | 1984-04-12 | Method for manufacturing transparent conductive film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60217147A (en) |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5216586A (en) * | 1975-07-30 | 1977-02-07 | Daicel Chem Ind Ltd | Surface-treated product of plastics and its preparation |
| JPS6050592B2 (en) * | 1977-05-25 | 1985-11-09 | 帝人株式会社 | Conductive laminated film |
| JPS58208039A (en) * | 1982-05-28 | 1983-12-03 | 住友ベークライト株式会社 | Conductive laminate |
-
1984
- 1984-04-12 JP JP59071876A patent/JPS60217147A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60217147A (en) | 1985-10-30 |
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