JPH0114319B2 - - Google Patents
Info
- Publication number
- JPH0114319B2 JPH0114319B2 JP8788783A JP8788783A JPH0114319B2 JP H0114319 B2 JPH0114319 B2 JP H0114319B2 JP 8788783 A JP8788783 A JP 8788783A JP 8788783 A JP8788783 A JP 8788783A JP H0114319 B2 JPH0114319 B2 JP H0114319B2
- Authority
- JP
- Japan
- Prior art keywords
- soldering
- solder
- bath
- package
- dip
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/56—Electroplating: Baths therefor from solutions of alloys
- C25D3/60—Electroplating: Baths therefor from solutions of alloys containing more than 50% by weight of tin
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistors
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistors electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistors electrically connecting electric components or wires to printed circuits by soldering
- H05K3/3465—Application of solder
- H05K3/3473—Plating of solder
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Electroplating And Plating Baths Therefor (AREA)
- Electroplating Methods And Accessories (AREA)
Description
【発明の詳細な説明】
本発明は半導体用低融点ガラス封止サーデイツ
プパツケージの封止ガラス上にはんだが析出しな
いはんだめつき法に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a soldering method in which no solder is deposited on the sealing glass of a low melting point glass sealed surdip package for semiconductors.
半導体用低融点ガラス封止サーデイツプパツケ
ージ（以下、サーデイツプパツケージという）へ
のはんだめつき法は製造工程が短く簡単である、
ウイスカーが発生しないなどの長所を有する有効
な手段ではあるが、つぎのような欠点を有するた
め現在ほとんど実用化されていない。 The method of soldering to low melting point glass-sealed surdip packages for semiconductors (hereinafter referred to as surdip packages) has a short and simple manufacturing process.
Although this is an effective means with advantages such as no whisker generation, it is hardly put into practical use at present because it has the following drawbacks.
すなわちサーデイツプパツケージへはんだめつ
きするばあいに用いられる一般的なはんだめつき
浴としてはホウフツ化浴、アルカノールスルホン
酸浴、フエノールスルホン酸浴、中性浴などが知
られているが、それらのめつき浴を用いてサーデ
イツプパツケージへはんだめつきするとはんだめ
つきされたサーデイツプパツケージのほとんど
100％の封止ガラス上にはんだが析出してリード
短絡をおこし、使用できなくなつてしまうという
欠点がある。 In other words, as common soldering baths used for soldering to solder dip packages, there are known boiling baths, alkanol sulfonic acid baths, phenolsulfonic acid baths, neutral baths, etc. , most of the soldered deep package cages are soldered using these plating baths.
The drawback is that solder deposits on the 100% encapsulated glass, causing lead short circuits and making it unusable.
前記のようにサーデイツプパツケージへ有効に
はんだめつきすることが事実上不可能であるた
め、サーデイツプパツケージへのはんだめつきが
必要とされるばあいには硫酸浴でまずスズめつき
したのちサーデイツプリードをはんだデイツプ仕
上げする方法が採用されている。しかしサーデイ
ツプパツケージにスズめつきをしたのちはんだデ
イツプ仕上げをする上記方法では、めつきおよび
デイツプの２工程が必要であり、その上はんだデ
イツプにより260℃以上の熱ストレスがサーデイ
ツプパツケージにかかり、リークなどの影響がで
るばあいもあり、必ずしも信頼性の高い製法では
ない。 As mentioned above, it is virtually impossible to effectively solder to a deep dip package, so if soldering to a deep dip package is required, first solder the solder in a sulfuric acid bath. After plating, a method is used in which the solder lead is finished with a solder dip. However, the method described above, in which the solder dip package is tin-plated and then finished with a solder dip, requires two steps: plating and dip, and in addition, the solder dip causes thermal stress of 260°C or more to the solder dip package. It is not necessarily a highly reliable manufacturing method as it may cause leaks or other effects.
本発明者は前記のようなサーデイツプパツケー
ジにはんだめつきをするばあいに生じる封止ガラ
ス上にはんだが析出するという欠点を改善し、サ
ーデイツプパツケージに熱ストレスをかけること
なく１工程でサーデイツプパツケージにはんだめ
つきすることを目的として鋭意研究を重ねた結
果、サーデイツプパツケージにはんだめつきをす
る方法において、メタンスルホン酸スズおよびメ
タンスルホン酸鉛を用いたはんだめつき浴をPH１
〜３に調整してはんだめつきすることにより、前
記目的を効果的に遂行しうることを見出し、本発
明を完成した。 The present inventor has solved the problem of solder precipitation on the sealing glass that occurs when soldering a solder dip package as described above, and has made it possible to solve the problem of solder deposition on the sealing glass without applying heat stress to the solder dip package. As a result of intensive research with the aim of soldering to a deep dip package in the process, we have found that tin methanesulfonate and lead methanesulfonate are not used in the method of soldering to deep dip packages. Damame Tsuki bath PH1
It has been found that the above object can be effectively achieved by soldering with an adjustment of 3 to 3, and the present invention has been completed.
本発明に用いるはんだめつき浴はその１中に
メタンスルホン酸スズ約10〜30ｇおよびメタンス
ルホン酸鉛約１〜５ｇを含有し、アンモニア水、
トリエタノールアミンなどでPHが１〜３に調整さ
れている浴である。前記はんだめつき浴のPHが１
未満であるとサーデイツプパツケージの封止ガラ
ス上にはんだが析出しやすくなり、また前記PHが
３を超えるとメタンスルホン酸スズやメタンスル
ホン酸鉛に由来する水酸化スズや水酸化鉛などの
白色沈殿が析出するため望ましい品質のはんだめ
つきができなくなる。 The soldering bath used in the present invention contains about 10 to 30 g of tin methanesulfonate and about 1 to 5 g of lead methanesulfonate, aqueous ammonia,
This bath has a pH adjusted to 1 to 3 using triethanolamine. The pH of the soldering bath is 1.
If the pH is less than 3, solder will easily precipitate on the sealing glass of the solder dip package, and if the pH exceeds 3, tin hydroxide and lead hydroxide derived from tin methanesulfonate and lead methanesulfonate will form. Since a white precipitate is deposited, soldering of desired quality cannot be achieved.
本発明に用いるはんだめつき浴には必要に応じ
てゼラチン、分散剤、プルテンLA（ジヤパンメタ
ル(株)製）のような添加剤などを添加してもよく、
たとえばプルテンLAのばあいにははんだめつき
浴１中に約20〜40ml添加されることが好まし
い。 Additives such as gelatin, dispersant, and Pluten LA (manufactured by Japan Metal Co., Ltd.) may be added to the soldering bath used in the present invention, if necessary.
For example, in the case of pluten LA, it is preferable to add about 20 to 40 ml to the soldering bath 1.
鉄−ニツケル材などからなるはんだめつきされ
るべきサーデイツプリードは硫酸で酸処理された
のち化学研磨処理によつて酸化被膜が除去され、
ついでサーデイツプパツケージがガラス封止され
る。 The solder lead made of iron-nickel material to be soldered is treated with sulfuric acid, and then the oxide film is removed by chemical polishing.
The dip package is then sealed with glass.
かくしてガラス封止されたサーデイツプパツケ
ージが上記のごとく調製されたはんだめつき浴に
て浴温約20〜35℃、電流密度約１〜3A／ｄm2の
条件で約５〜10分間はんだめつきされたのち洗浄
などの後処理がなされ、はんだめつきされたサー
デイツプパツケージがえられる。 The glass-sealed solder dip package is then heated in the soldering bath prepared as described above for about 5 to 10 minutes at a bath temperature of about 20 to 35°C and a current density of about 1 to 3 A/ dm2 . After being soldered, post-processing such as cleaning is performed to obtain a soldered dip package.
以下本発明の方法を実施例および比較例に基づ
いて説明するが本発明はかかる実施例のみに限定
されるものではない。 The method of the present invention will be explained below based on Examples and Comparative Examples, but the present invention is not limited to these Examples.
実施例 １
24ピンのサーデイツプパツケージ（めつき表面
積５cm2／１個）に硫酸を用いた酸処理、化学研磨
処理およびガラス封止を行なつた。Example 1 A 24-pin circuit board package (plated surface area: 5 cm 2 /piece) was subjected to acid treatment using sulfuric acid, chemical polishing treatment, and glass sealing.
メタンスルホン酸スズ15ｇ／、メタンスルホ
ン酸鉛３ｇ／、ゼラチン２ｇ／、分散剤とし
てPEGNPE5ml／を用いアンモニア水でPH1.6
に調整することにより、本発明に用いるはんだめ
つき浴を２調製した。 PH1.6 with ammonia water using tin methanesulfonate 15g/, lead methanesulfonate 3g/, gelatin 2g/, and PEGNPE 5ml/ as a dispersant.
Two solder plating baths used in the present invention were prepared by adjusting the following.
前記のようにしてえられたサーデイツプパツケ
ージ４個をラツクにセツトし、陽極にはんだ板を
使用して電流密度2A／ｄm2、浴温25℃の条件で
はんだめつき浴をマグネチツクスターラーで撹拌
しながら7.5分間はんだめつきしたのち洗浄した。 Easily set the four solder dip packages obtained as described above, use a solder plate as the anode, and heat the solder bath using a magnetic stirrer at a current density of 2 A/dm 2 and a bath temperature of 25°C. After soldering for 7.5 minutes while stirring, it was washed.
えられたはんだめつきされたサーデイツプパツ
ケージは封止ガラス上へのはんだの析出のまつた
くない良好な品質のものであつた。 The solder-plated solder dip package obtained was of good quality with no problem of solder precipitation on the sealing glass.
実施例 ２
メタンスルホン酸スズ10ｇ／、メタンスルホ
ン酸鉛２ｇ／およびゼラチン２ｇ／を用いて
調製したはんだめつき浴をトリエタノールアミン
でPH1.2に調整した。Example 2 A soldering bath prepared using 10 g of tin methanesulfonate, 2 g of lead methanesulfonate, and 2 g of gelatin was adjusted to pH 1.2 with triethanolamine.
えられたはんだめつき浴２を用いて実施例１
と同様にしてえられたガラス封止したサーデイツ
プパツケージを電流密度1.5A／ｄm2で10分間は
んだめつきしたのち洗浄した。 Example 1 using the obtained soldering bath 2
A glass-sealed surdip package obtained in the same manner as above was soldered for 10 minutes at a current density of 1.5 A/dm 2 and then washed.
えられたはんだめつきされたサーデイツプパツ
ケージは封止ガラス上へのはんだの析出のまつた
くない良好な品質のものであつた。 The solder-plated solder dip package obtained was of good quality with no problem of solder precipitation on the sealing glass.
比較例 １
実施例１で用いたメタンスルホン酸塩浴のかわ
りにホウフツ酸塩を用いたホウフツ化浴、アルカ
ノールスルホン酸スズ、アルカノールスルホン酸
鉛を用いたアルカノールスルホン酸浴またはフエ
ノールスルホン酸スズおよびフエノールスルホン
酸鉛を用いたフエノールスルホン酸浴を用いて実
施例１と同様にしてはんだめつきしたがいずれの
ばあいにも封止ガラス上にはんだが析出し、使用
しうる品質のはんだめつきされたサーデイツプパ
ツケージをうることができなかつた。Comparative Example 1 In place of the methanesulfonate bath used in Example 1, a borofusate bath using borate, an alkanolsulfonic acid bath using tin alkanolsulfonate, lead alkanolsulfonate, or tin phenolsulfonate and phenol Soldering was carried out in the same manner as in Example 1 using a phenolsulfonic acid bath containing lead sulfonate, but in both cases, solder precipitated on the sealing glass, and the solder was of usable quality. I was unable to get the third package that was thrown at me.
比較例 ２
実施例１で用いたはんだめつき浴のPHを約0.6
にした以外は実施例１と同様にして約５分間はん
だめつきした。Comparative Example 2 The pH of the soldering bath used in Example 1 was approximately 0.6.
Soldering was carried out for about 5 minutes in the same manner as in Example 1, except that
えられたはんだめつきされたサーデイツプパツ
ケージの約50％の封止ガラス上にはんだが析出し
ていた。 Solder was deposited on about 50% of the sealing glass of the solder dip package obtained.
比較例 ３
実施例１で用いたはんだめつき浴のPHを約3.2
にすると白色沈殿が生じ、正常なはんだめつきを
することができなかつた。Comparative Example 3 The pH of the soldering bath used in Example 1 was approximately 3.2.
When this was done, a white precipitate formed and normal soldering could not be achieved.
Claims (1)
ケージにはんだめつきする方法において、メタン
スルホン酸スズおよびメタンスルホン酸鉛を用い
たはんだめつき浴をPH１〜３に調整してはんだめ
つきすることを特徴とするサーデイツプパツケー
ジはんだめつき法。1. In a method of soldering to a low melting point glass-sealed surdip package for semiconductors, a soldering bath using tin methanesulfonate and lead methanesulfonate is adjusted to pH 1 to 3 and soldering is carried out. A soldering method for soldering packages characterized by:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8788783A JPS59211562A (en) | 1983-05-17 | 1983-05-17 | Solder plating method of "cer-dip" package |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8788783A JPS59211562A (en) | 1983-05-17 | 1983-05-17 | Solder plating method of "cer-dip" package |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS59211562A JPS59211562A (en) | 1984-11-30 |
| JPH0114319B2 true JPH0114319B2 (en) | 1989-03-10 |
Family
ID=13927382
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8788783A Granted JPS59211562A (en) | 1983-05-17 | 1983-05-17 | Solder plating method of "cer-dip" package |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS59211562A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4589962A (en) * | 1985-06-03 | 1986-05-20 | National Semiconductor Corporation | Solder plating process and semiconductor product |
-
1983
- 1983-05-17 JP JP8788783A patent/JPS59211562A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS59211562A (en) | 1984-11-30 |
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