JPH0114664B2 - - Google Patents
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- Publication number
- JPH0114664B2 JPH0114664B2 JP55088287A JP8828780A JPH0114664B2 JP H0114664 B2 JPH0114664 B2 JP H0114664B2 JP 55088287 A JP55088287 A JP 55088287A JP 8828780 A JP8828780 A JP 8828780A JP H0114664 B2 JPH0114664 B2 JP H0114664B2
- Authority
- JP
- Japan
- Prior art keywords
- gas
- solid
- local
- analysis
- sample
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J49/00—Particle spectrometers or separator tubes
- H01J49/02—Details
- H01J49/10—Ion sources; Ion guns
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Other Investigation Or Analysis Of Materials By Electrical Means (AREA)
- Investigating And Analyzing Materials By Characteristic Methods (AREA)
- Electron Tubes For Measurement (AREA)
Description
【発明の詳細な説明】
この発明は固体とくに金属中に溶けこんでいる
ガス成分を局所的に高感度で分析する固体局所ガ
ス分析方法ならびにその装置に関するものであ
る。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a solid local gas analysis method and apparatus for locally analyzing gas components dissolved in solids, particularly metals, with high sensitivity.
鉄鋼材を中心に各種金属材料の更に高品質材の
開発のための材料研究の分野において固体局所ガ
ス分析はその重要性が高まつている。金属材料は
多くの不純分が含まれているが最近とくにガス成
分である水素H、窒素N、いおうS、炭素Cなど
の材料への悪い影響が問題になつている。例えば
鉄鋼材料中のHは遅れ破かいや水素脆化の原因と
して挙げられている。このように材料を劣化させ
る上記のようなガス成分を試料の微小部分から採
取し、これを分析するについては従来IMA(イオ
ン・マイクロアナライザ)か、またはEPMA(エ
レクトロン・プローブ・マイクロアナライザ)に
よらざるを得なかつた。しかしながら前者の
IMAは細く絞つたイオンビームで試料をスパツ
タしてイオン化し、これを質量分析計で分析する
装置で原理上は上記材料吸蔵ガスをPPbの高感度
で分析しうる構成ではあるが、装置が複雑高価で
普及率が低く、実用の局所分析装置として現在十
分完成されていない感がある。後者のEPMAは、
細く絞つた電子線を試料に照射しそこから生ずる
各種の信号(各種電子・X線・光など)を総合的
に利用して元素分析その他の機能を果すものであ
り、現在ではあらゆるミクロ分析の主流を占める
装置である。しかるにこのEPMAは上記材料吸
蔵ガスのうち水素Hが検出し得ないだけでなく、
窒素NいおうS、炭素Cなどのガス成分の検出感
度が低く局部ガス分析装置としては上記IMAに
劣る欠点がある。このように金属材料の局所分析
との対応における上記材料吸蔵ガスの高感度分析
は未だその適切な技術装置が無く、これが前述の
高品質材料の開発、事故原因追求の面において大
きい障害となつており、この解決は特に鉄鋼業界
に強く要望される現況である。 Solid local gas analysis is becoming increasingly important in the field of materials research for the development of higher quality metal materials, mainly steel. Metal materials contain many impurities, and recently the negative effects of gas components such as hydrogen H, nitrogen N, sulfur S, and carbon C on materials have become a problem. For example, H in steel materials is cited as a cause of delayed fracture and hydrogen embrittlement. Conventionally, the gas components mentioned above that degrade materials are collected from a minute part of a sample and analyzed using an IMA (ion microanalyzer) or an EPMA (electron probe microanalyzer). I had no choice. However, the former
IMA is a device that sputters and ionizes a sample with a narrowly focused ion beam, and then analyzes this with a mass spectrometer.In principle, it is configured to be able to analyze the above-mentioned material occlusion gas with the high sensitivity of PPb, but the device is complicated. It is expensive and has a low penetration rate, and there is a feeling that it is currently not fully developed as a practical local analysis device. The latter EPMA is
This method performs elemental analysis and other functions by irradiating a sample with a narrowly focused electron beam and comprehensively utilizing the various signals (electrons, X-rays, light, etc.) generated therefrom. This is the mainstream device. However, this EPMA not only cannot detect hydrogen H among the above material storage gases, but also
The detection sensitivity for gas components such as nitrogen, nitrogen, sulfur, and carbon is low, making it inferior to the above-mentioned IMA as a local gas analyzer. As described above, there is still no appropriate technical equipment for high-sensitivity analysis of occluded gases in the above-mentioned materials, which corresponds to local analysis of metal materials, and this has become a major obstacle in the development of the aforementioned high-quality materials and in investigating the causes of accidents. The current situation is such that a solution to this problem is particularly strongly desired by the steel industry.
この発明は以上の現況に鑑みなされたもので、
現在固体局所のミクロ分析の分野において著しい
進歩を遂げたEPMAと、ガス分析において原理
的にすぐれたIMAの両者の特徴を巧みに組合わ
せて安定した性能で操作容易にかつ低廉な分析コ
ストによつて材料に有害なガスのすべてを高感度
に分析しうる固体局所ガス分析法ならびにその装
置の提供を目的とするものである。すなわち、真
空ふんい気中において固体内吸蔵ガスを励起して
放出させ、このガスを不活性ガスの噴射流によつ
て採取し、このピツクアツプされたガスと上記不
活性ガスの混合体を質量分析し、上記固体内吸蔵
ガスを分析するようにしたことを特徴とする固体
局所ガス分析方法と、固体試料を真空ふんい気に
保ち、かつその位置を任意に微動させる試料室機
構と、電子線または荷電粒子線照射機構または火
花放電機構または機械的刺激機構にてなる固体内
吸蔵ガス励起装置と、不活性ガスの噴射流機構お
よび質量分析装置とを備えてなる固体局所ガス分
析装置とにかかるものである。 This invention was made in view of the above-mentioned current situation.
By skillfully combining the features of both EPMA, which has made remarkable progress in the field of microanalysis of solid local areas, and IMA, which is excellent in principle in gas analysis, it provides stable performance, easy operation, and low analysis costs. The object of the present invention is to provide a solid-state local gas analysis method and an apparatus for the same, which can analyze all gases harmful to materials with high sensitivity. That is, a gas stored in a solid is excited and released in a vacuum atmosphere, this gas is collected by a jet stream of inert gas, and a mixture of the picked up gas and the above inert gas is subjected to mass spectrometry analysis. A method for local gas analysis in a solid is characterized in that the gas stored in the solid is analyzed, a sample chamber mechanism that keeps a solid sample in a vacuum atmosphere and allows the position of the sample to be moved slightly at will, and an electron beam. or a solid-state local gas analyzer comprising a solid-state occluded gas excitation device comprising a charged particle beam irradiation mechanism, a spark discharge mechanism, or a mechanical stimulation mechanism; and an inert gas jet flow mechanism and a mass spectrometer. It is something.
以下図面によつて発明の実施例ならびに装置を
説明する。第1図はその方法の基本を説明する図
である。1は固体試料で、たとえばFeの直径20
mm厚さ10mmのもの、これを図示しないEPMAの
試料室の試料微動装置に装てんする。2は
EPMAの電子光学系から照射される入射電子線
で、試料1の表面1Aにおいて1μまたはそれ以
下の真円の電子線スポツト3を形成する。なおこ
の電子線2は試料表面1Aを最大約10mm2の範囲を
任意に走査するようになつている。4は入射電子
2の衝突によつて励起される電磁波のうち、分析
に利用される最も重要な特性X線であり、照射点
3の元素の定性定量分析その他の測定がこれによ
つて行われる。5は吸収電子で、入射した電子が
試料1中の原子と衝突をくり返し2次電子やいろ
いろのエネルギの電磁波を励起させたのち電流と
してアースに流れる。これを試料電流とも呼びこ
れを電流計μAで測り入射電子の密度のモニタと
なる。その他図示しない2次電子・光子などが照
射点3から放出されるがこの発明に関係がないの
で説明を省く。6は固体試料1から放出されるガ
スであり、そのガス6のうち試料表面1Aの分は
電子衝突につて離脱し、数μ内部のたとえば結晶
粒界のガスは、電子線加熱によつて離脱し放出す
る。この電子線加熱は試料1が上記寸法のものの
ばあい、加圧電圧40kv、試料電流(上記の5)
1μA、電子スポツト3の径1μのとき、スポツト3
において約400℃となる。これはカスタン
(Castaing)の式θn=1.14×10-3W/Cd=1.14×IV/c
d
(℃)(I:μA,V:kv,c:熱伝導率,d:
μ)にて立証される。このように通常のEPMA
の使用条件下で吸蔵ガスの放出が十分可能であ
る。 Embodiments and devices of the invention will be described below with reference to the drawings. FIG. 1 is a diagram explaining the basics of the method. 1 is a solid sample, for example, Fe with a diameter of 20
A sample with a thickness of 10 mm is loaded into the sample fine movement device (not shown) in the sample chamber of EPMA. 2 is
An incident electron beam irradiated from the electron optical system of the EPMA forms a perfect circular electron beam spot 3 of 1 μm or smaller on the surface 1A of the sample 1. The electron beam 2 is designed to arbitrarily scan the sample surface 1A over a maximum range of about 10 mm 2 . Among the electromagnetic waves excited by the collision of the incident electrons 2, 4 is the most important characteristic X-ray used for analysis, and qualitative and quantitative analysis and other measurements of the elements at the irradiation point 3 are performed using this. . Reference numeral 5 represents absorbed electrons, and the incident electrons repeatedly collide with atoms in the sample 1, exciting secondary electrons and electromagnetic waves of various energies, and then flow to the ground as a current. This is also called the sample current and is measured with an ammeter μA to monitor the density of incident electrons. Other secondary electrons, photons, etc. (not shown) are emitted from the irradiation point 3, but since they are not related to this invention, their explanation will be omitted. Reference numeral 6 indicates gas released from the solid sample 1. Of the gas 6, a portion of the sample surface 1A separates due to electron collision, and gas within a few μm, for example at the grain boundary, separates due to electron beam heating. and release it. For this electron beam heating, if the sample 1 has the above dimensions, the applied voltage is 40 kV, and the sample current (5 above) is applied.
1μA, when the diameter of electronic spot 3 is 1μ, spot 3
The temperature is approximately 400℃. This is Castaing's equation θ n = 1.14 x 10 -3 W/Cd = 1.14 x IV/c
d (°C) (I: μA, V: kv, c: thermal conductivity, d:
μ). Like this normal EPMA
It is possible to fully release the stored gas under the usage conditions.
以上がこの発明の一要件である固体局所のガス
の励起法の一つであり、つぎにこの放出されたガ
スを採取する手段を説明する。7は不活性ガスた
とえばArガスボンベ、8,9はArガスリークノ
ズルとその吸引口である。Arガス10は10-2〜
10-3Torr位のリーク圧で矢印A,Bのようにジ
エツト流を作り高真空(10-5Torr)の試料室1
1に四散しようとする上記放出ガス4のキヤリヤ
ーガスとなり試料の放出ガス全量の約50%以上を
採取する。9の吸引口は導管を介してArガス1
0と試料放出ガス6の混合ガスを試料室外の質量
分析系12に導くものである。 The above is one of the methods for exciting local gas in a solid, which is one of the requirements of the present invention. Next, the means for collecting the emitted gas will be explained. 7 is an inert gas, for example, an Ar gas cylinder; 8 and 9 are Ar gas leak nozzles and their suction ports. Ar gas 10 is 10 -2 ~
A jet flow is created as shown by arrows A and B with a leak pressure of about 10 -3 Torr, and sample chamber 1 is placed in a high vacuum (10 -5 Torr).
It serves as a carrier gas for the above-mentioned released gas 4 which is about to be dispersed into 1, and about 50% or more of the total amount of released gas in the sample is collected. The suction port 9 receives Ar gas 1 through a conduit.
0 and the sample discharge gas 6 are introduced into the mass spectrometry system 12 outside the sample chamber.
第2図は上記放出ガス6のピツクアツプの効率
を向上させる手段としての一実施例を示す図であ
る。キヤリヤーガス10の上記10-2〜10-3Torr
のガス圧の高低は入射電子線2の散乱に影響する
ため13のようにスポツト3の周辺にカバーを設
け、キヤリヤーガス10のリーク圧Pをできるだ
け低く(真空に近づけ)する方法である。13A
は電子線2の入射窓である。ただしこのばあい通
常のX線分析を行なうために、カバー13を着脱
自在とするかまたは第3図のように特性X線4そ
の他の信号Xを放出する窓15を窓蓋16で外部
から遠隔操作にて開閉自在にした試料函14によ
つて放出ガス6を効率よく採取する。第3図の1
7は電子光学系の対物レンズ、θ゜はX線取出し角
度で通常52.5゜であり、窓15の開度はこれによ
つて決まる。第4図は上記構成に更にガス放出を
促進し、多量のガスをピツクアツプする手段を示
す図である。18は装置外から遠隔操作するマニ
ピユレータの先端部、19は試料表面1Aの結
晶、20は結晶粒界である。18のマニピユレー
タの鋭利な尖端18Aで、試料表面1Aを突いた
り、引つかくなどの機械的刺激を与えることによ
つて結晶粒界20に割れなどが生じ電子線2のガ
ス放出効率を促進するものである。第5図は上記
マニピユレータ18を電極とし、適切な直流高圧
電源21を接続して試料表面1Aの任意の局所に
火花放電22をさせるガス放出励起手段を示す。
この手段も上記電子線照射と併用して行うことに
よつてガス放出効率が格段に向上する。 FIG. 2 is a diagram showing an embodiment of a means for improving the efficiency of picking up the discharged gas 6. As shown in FIG. Carrier gas 10 above 10 -2 to 10 -3 Torr
Since the height of the gas pressure affects the scattering of the incident electron beam 2, a cover is provided around the spot 3 as shown in 13, and the leak pressure P of the carrier gas 10 is made as low as possible (close to vacuum). 13A
is an incident window for the electron beam 2. However, in this case, in order to perform normal X-ray analysis, the cover 13 is made removable, or the window 15 that emits characteristic X-rays 4 and other signals The released gas 6 is efficiently collected using the sample box 14 which can be opened and closed by operation. Figure 3 1
Reference numeral 7 denotes an objective lens of the electron optical system, and θ° is the X-ray extraction angle, which is usually 52.5°, and the opening degree of the window 15 is determined by this. FIG. 4 is a diagram showing a means for further promoting gas release and picking up a large amount of gas in addition to the above structure. 18 is the tip of a manipulator that is remotely operated from outside the apparatus, 19 is a crystal on the sample surface 1A, and 20 is a grain boundary. By applying mechanical stimulation such as poking or pulling the sample surface 1A with the sharp tip 18A of the manipulator 18, cracks are generated in the grain boundaries 20 and the gas release efficiency of the electron beam 2 is promoted. It is something. FIG. 5 shows a gas discharge excitation means that uses the manipulator 18 as an electrode and connects an appropriate DC high voltage power source 21 to cause a spark discharge 22 to be generated at an arbitrary location on the sample surface 1A.
By using this method in combination with the above-mentioned electron beam irradiation, the gas release efficiency is significantly improved.
以上がEPMAの試料室を利用して局所ガス分
析を行う各種の方法であるが、この発明は
EPMAに限定せずIMAを利用し、第1図の入射
電子線2をイオンビームに置換え、その他の構成
は第1図とほぼ同様にすることも含む。また第2
〜5図の併用も可能である。 The above are various methods for performing local gas analysis using the sample chamber of EPMA, but this invention
The present invention is not limited to EPMA, but also includes using IMA, replacing the incident electron beam 2 in FIG. 1 with an ion beam, and making the other configurations substantially the same as in FIG. 1. Also the second
It is also possible to use Figures 5 to 5.
この発明は以上のように構成されているので、
従来固体局所のガス分析を既存の局所分析装置で
分析していたための欠点を解消し、固体とくに金
属中のガス分析に対するつぎの諸要求をみたすも
のである。すなわち(1)は局所分析装置のSEM像
(走査電子像)やX線微量分析に対応する局所の
吸蔵ガス分析ができる。(2)は上記ガス成分を効率
よく多量に採取することが可能となる。(3)H2の
分析も可能である。 Since this invention is configured as described above,
This method overcomes the disadvantages of conventional local gas analysis of solids using existing local analyzers, and satisfies the following requirements for gas analysis in solids, especially metals. In other words, (1) enables local storage gas analysis corresponding to SEM images (scanning electron images) and X-ray microanalysis using local analyzers. (2) makes it possible to efficiently collect a large amount of the above gas components. (3) Analysis of H2 is also possible.
第1図はこの発明の分析法の原理説明図、第2
図、第3図は分析効率を向上する実施例装置説明
図、第4図はガス放出の手段としての機械的刺激
法説明図、第5図は同じくガス励起手段としての
火花放電法説明図である。
1…固体試料、2…入射電子線、3…電子線ス
ポツト、4…特性X線、5…吸収電子(試料電
流)、6…固体試料から放出されるガス、8…キ
ヤリヤーガスリークノズル、9…ガス吸引口、1
0…キヤリヤーガス、11…高真空試料室、12
…質量分析系、13…スポツト部カバー、14…
試料函、15…窓、16…窓蓋、17…電子光学
系の対物レンズ、θ゜…X線取出し角度、18…マ
ニピユレータの先端、19…固体試料の結晶、2
0…結晶粒界、21…直流高圧電源、22…火花
放電。
Figure 1 is a diagram explaining the principle of the analytical method of this invention, Figure 2
Figure 3 is an explanatory diagram of an example device for improving analysis efficiency, Figure 4 is an explanatory diagram of a mechanical stimulation method as a means of gas release, and Figure 5 is an explanatory diagram of a spark discharge method as a means of gas excitation. be. DESCRIPTION OF SYMBOLS 1... Solid sample, 2... Incident electron beam, 3... Electron beam spot, 4... Characteristic X-ray, 5... Absorbed electron (sample current), 6... Gas released from solid sample, 8... Carrier gas leak nozzle, 9... Gas suction port, 1
0...Carrier gas, 11...High vacuum sample chamber, 12
...Mass spectrometry system, 13...Spot part cover, 14...
Sample box, 15... Window, 16... Window cover, 17... Objective lens of electron optical system, θ°... X-ray extraction angle, 18... Tip of manipulator, 19... Crystal of solid sample, 2
0... Grain boundary, 21... DC high voltage power supply, 22... Spark discharge.
Claims (1)
起して放出させ、このガスを不活性ガスの噴射流
によつて採取し、このピツクアツプされたガスと
上記不活性ガスの混合体を質量分析し、上記固体
内吸蔵ガスを分析するようにしたことを特徴とす
る固体局所ガス分析方法。 2 固体内吸蔵ガスを放出させる励起を電子線照
射によつて行う特許請求の範囲第1項記載の固体
局所ガス分析方法。 3 固体内吸蔵ガスを放出させる励起を荷電粒子
線照射によつて行う特許請求の範囲第1項記載の
固体局所ガス分析方法。 4 固体内吸蔵ガスを放出させる励起を火花放電
によつて行う特許請求の範囲第1項記載の固体局
所ガス分析方法。 5 固体内吸蔵ガスを放出させる励起を機械的刺
激によつて行う特許請求の範囲第1項記載の固体
局所ガス分析方法。 6 固体試料を真空ふんい気に保ち、かつその位
置を任意に微動させる試料室機構と、電子線また
は荷電粒子線照射機構または火花放電機構または
機械的刺激機構にてなる固体内吸蔵ガス励起装置
と、不活性ガスの噴射流機構および質量分析装置
とを備えてなる固定局所ガス分析装置。[Claims] 1. Excite and release the gas stored in a solid in a vacuum atmosphere, collect this gas with a jet stream of inert gas, and mix this picked up gas with the above inert gas. A method for local gas analysis in a solid, characterized in that the mixture is subjected to mass spectrometry to analyze the occluded gas in the solid. 2. The solid local gas analysis method according to claim 1, wherein the excitation for releasing the gas stored in the solid is performed by electron beam irradiation. 3. The method for local gas analysis in a solid according to claim 1, wherein the excitation for releasing the gas stored in the solid is performed by irradiation with a charged particle beam. 4. The method for local gas analysis in a solid according to claim 1, wherein the excitation for releasing the gas stored in the solid is performed by a spark discharge. 5. The method for local gas analysis in a solid according to claim 1, wherein the excitation for releasing the gas stored in the solid is performed by mechanical stimulation. 6. A sample chamber mechanism that keeps a solid sample in a vacuum atmosphere and moves its position arbitrarily, and an excitation device for gases stored in a solid, which consists of an electron beam or charged particle beam irradiation mechanism, a spark discharge mechanism, or a mechanical stimulation mechanism. A fixed local gas analyzer comprising: a jet flow mechanism for inert gas; and a mass spectrometer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8828780A JPS5713660A (en) | 1980-06-27 | 1980-06-27 | Method of analysing solid local gas and its device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8828780A JPS5713660A (en) | 1980-06-27 | 1980-06-27 | Method of analysing solid local gas and its device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5713660A JPS5713660A (en) | 1982-01-23 |
| JPH0114664B2 true JPH0114664B2 (en) | 1989-03-13 |
Family
ID=13938686
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8828780A Granted JPS5713660A (en) | 1980-06-27 | 1980-06-27 | Method of analysing solid local gas and its device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5713660A (en) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2695850B2 (en) * | 1987-07-20 | 1998-01-14 | ニチモウ株式会社 | Knotless net |
| PT859546E (en) | 1995-10-13 | 2002-06-28 | Otter Ultra Low Drag Ltd | CELLULAR STRUCTURE OF A DRIVE NETWORK SYSTEM AND ASSOCIATED PROCESSES |
| US5742050A (en) * | 1996-09-30 | 1998-04-21 | Aviv Amirav | Method and apparatus for sample introduction into a mass spectrometer for improving a sample analysis |
| EP0977479B1 (en) | 1997-04-14 | 2003-09-10 | OTTER Ultra-Low-Drag, Ltd. | Improved cell design for a trawl system and methods |
| JPH11173962A (en) * | 1997-12-15 | 1999-07-02 | Mitsubishi Electric Corp | Apparatus and method for analyzing organic matter on sample surface |
| US6434879B1 (en) | 1998-02-10 | 2002-08-20 | Otter Ultra-Low-Drag, Ltd. | Bi-directional, manufacturable, lift-generating mesh bar |
| JP2021055996A (en) * | 2017-12-13 | 2021-04-08 | 株式会社日立ハイテク | Electron beam irradiation apparatus and analysis system |
-
1980
- 1980-06-27 JP JP8828780A patent/JPS5713660A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5713660A (en) | 1982-01-23 |
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