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JPH0116624B2 - - Google Patents
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JPH0116624B2 - - Google Patents

Info

Publication number
JPH0116624B2
JPH0116624B2 JP59058044A JP5804484A JPH0116624B2 JP H0116624 B2 JPH0116624 B2 JP H0116624B2 JP 59058044 A JP59058044 A JP 59058044A JP 5804484 A JP5804484 A JP 5804484A JP H0116624 B2 JPH0116624 B2 JP H0116624B2
Authority
JP
Japan
Prior art keywords
polishing
diamond grains
artificial diamond
precipitated
dispersed phase
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP59058044A
Other languages
Japanese (ja)
Other versions
JPS60201878A (en
Inventor
Noribumi Kikuchi
Takayuki Shingyochi
Hiroaki Yamashita
Akio Nishama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Metal Corp
Original Assignee
Mitsubishi Metal Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Metal Corp filed Critical Mitsubishi Metal Corp
Priority to JP5804484A priority Critical patent/JPS60201878A/en
Publication of JPS60201878A publication Critical patent/JPS60201878A/en
Publication of JPH0116624B2 publication Critical patent/JPH0116624B2/ja
Granted legal-status Critical Current

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24DTOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D3/00Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
    • B24D3/02Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent
    • B24D3/04Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent and being essentially inorganic
    • B24D3/06Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent and being essentially inorganic metallic or mixture of metals with ceramic materials, e.g. hard metals, "cermets", cements
    • B24D3/10Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent and being essentially inorganic metallic or mixture of metals with ceramic materials, e.g. hard metals, "cermets", cements for porous or cellular structure, e.g. for use with diamonds as abrasives

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Polishing Bodies And Polishing Tools (AREA)

Description

【発明の詳細な説明】 この発明は、ダイヤモンド研磨砥石にかかり、
特に析出生成させた人工ダイヤモンド粒にて構成
された新規なダイヤモンド研磨砥石に関するもの
である。
[Detailed description of the invention] This invention applies to a diamond polishing wheel,
In particular, the present invention relates to a new diamond polishing wheel made of precipitated artificial diamond grains.

従来、一般に、超硬合金やその他のサーメツ
ト、さらにセラミツクスやガラスなどの研削・研
磨にはダイヤモンド研磨砥石が用いられている。
Conventionally, diamond polishing wheels have been generally used for grinding and polishing cemented carbide, other cermets, ceramics, glass, and the like.

この従来ダイヤモンド研磨砥石は、例えばAl
やAl合金の基体の研磨作用面に、結合剤として、
レジン樹脂や、CuまたはNiなどの金属を用いて、
天然ダイヤモンド粒、あるいは超高圧高温合成に
よつて製造された人工ダイヤモンド粒を分散結合
させた構造をもつものである。
This conventional diamond polishing wheel is made of aluminum, for example.
As a bonding agent,
Using resin or metal such as Cu or Ni,
It has a structure in which natural diamond grains or artificial diamond grains manufactured by ultra-high pressure and high temperature synthesis are dispersed and bonded.

したがつて、上記の従来ダイヤモンド砥石にお
いては、天然ダイヤモンド粒や人工ダイヤモンド
粒が高価であるばかりでなく、研磨面に影響を及
ぼすダイヤモンド粒をできるだけ狭い範囲の粒度
分布に収めなければならないため、著しく長時間
の分級工程を必要とすることから、その製造コス
トは高くならざるを得ないものであつた。
Therefore, in the above-mentioned conventional diamond grinding wheels, not only are natural diamond grains and artificial diamond grains expensive, but the diamond grains that affect the polished surface must be kept within a particle size distribution as narrow as possible. Since a long classification process is required, the manufacturing cost is inevitably high.

そこで、本発明者等は、上述のような観点か
ら、狭い範囲内の粒度分布をもつたダイヤモンド
粒で構成されたダイヤモンド研磨砥石を製造コス
ト安く製造すべく研究を行なつた結果、まず、
Al、Cu、Fe、Ni、およびCoなど、さらにこれら
の成分のうちのいずれかを主成分として含有する
合金からなる金属、あるいは炭化タングステン
(WC)基サーメツト、炭化チタン(TiC)基サー
メツト、窒化チタン(TiN)基サーメツト、お
よび炭窒化チタン(TiCN)基サーメツトなどの
サーメツトで製造された基体の研磨作用面に、
W、Mo、およびNb、並びにその合金のうちの1
種以上が分散相として存在する組織を有する蒸着
層を、通常の化学蒸着法または物理蒸着法によつ
て形成し、この状態で、これを通常の人工ダイヤ
モンド析出生成法、すなわち、反応混合ガスを加
熱し、活性化する手段として、 (a) 例えば特開昭58−91100号公報に記載される
ような熱電子放射材を用いる方法、 (b) 例えば特開昭58−135117号公報に記載される
ような高周波によるプラズマ放電を利用する方
法、 (c) 例えば特開昭58−110494号公報に記載される
ようなマイクロ波によるプラズマ放電を利用す
る方法、 以上(a)〜(c)のいずれかの方法によつて処理する
と、主として前記蒸着層における分散相に強固な
密着力で人工ダイヤモンドが析出生成するように
なり、この結果の前記分散相上に析出生成した人
工ダイヤモンド粒は、上記蒸着層表面に分散して
析出生成し、これを研磨砥石として使用した場
合、人工ダイヤモンド粒の間に目づまりを起こす
ことなくすぐれた砥石性能を発揮するようにな
り、さらにこの表面にNiなどの金属表面層を、
通常の化学蒸着法または物理蒸着法にて蒸着形成
したり、あるいは電解メツキ法または無電解メツ
キ法によりメツキ形成した場合には、前記析出生
成人工ダイヤモンド粒の密着性が一段と向上する
ようになり、しかもこのダイヤモンド研磨砥石の
製造コストは著しく安価であるという知見を得た
のである。
Therefore, from the above-mentioned viewpoint, the present inventors conducted research in order to manufacture a diamond polishing wheel composed of diamond grains having a particle size distribution within a narrow range at a low manufacturing cost.
Metals such as Al, Cu, Fe, Ni, and Co, as well as alloys containing any of these components as a main component, or tungsten carbide (WC)-based cermets, titanium carbide (TiC)-based cermets, and nitrided cermets. On the polishing surface of substrates made of cermets such as titanium (TiN)-based cermets and titanium carbonitride (TiCN)-based cermets,
W, Mo, and Nb, and one of their alloys
A deposited layer having a structure in which at least one species exists as a dispersed phase is formed by a normal chemical vapor deposition method or a physical vapor deposition method. As means for heating and activating, (a) a method using a thermionic emitting material as described in, for example, JP-A No. 58-91100; (b) a method using a thermionic emitting material as described in, for example, JP-A-58-135117; (c) A method using plasma discharge caused by microwaves as described in JP-A-58-110494, any of the above (a) to (c). When treated by this method, artificial diamond is precipitated and generated mainly with strong adhesion to the dispersed phase in the vapor deposited layer, and as a result, the artificial diamond grains precipitated and generated on the dispersed phase are When this layer is dispersed and formed as a precipitate on the surface of the layer, when used as a polishing wheel, it exhibits excellent grinding performance without clogging between the artificial diamond grains. layer,
When vapor deposition is performed using a normal chemical vapor deposition method or physical vapor deposition method, or plating is performed using an electrolytic plating method or an electroless plating method, the adhesion of the precipitated artificial diamond particles is further improved. Furthermore, we have found that the manufacturing cost of this diamond polishing wheel is extremely low.

この発明は、上記知見にもとづいてなされたも
のであつて、 (1) 金属またはサーメツトの基体と、 前記基体の研磨作用面に形成された、W、
Mo、およびNb、並びにその合金のうちの1種
以上が分散相として存在する組織を有する蒸着
層と、 前記蒸着層における分散相上に析出生成し分
散して密着した人工ダイヤモンド粒と、 からなる析出生成人工ダイヤモンド粒で構成さ
れたダイヤモンド研磨砥石。
The present invention has been made based on the above findings, and includes: (1) a metal or cermet base; W formed on the polishing surface of the base;
A vapor deposited layer having a structure in which one or more of Mo, Nb, and their alloys exist as a dispersed phase; and artificial diamond grains that are precipitated, generated, and dispersed on the dispersed phase in the vapor deposited layer, and are closely attached to each other. A diamond polishing wheel composed of precipitated artificial diamond grains.

(2) 金属またはサーメツトの基体と、 前記基体の研磨作用面に形成された、W、
Mo、およびNb、並びにその合金のうちの1種
以上が分散相として存在する組織を有する蒸着
層と、 前記蒸着層における分散相上に析出生成した
分散して密着した人工ダイヤモンド粒と、 前記基体の研磨作用面に蒸着またはメツキに
より形成された金属表面層と、 からなる析出生成人工ダイヤモンド粒で構成さ
れたダイヤモンド研磨砥石。
(2) a metal or cermet base; W formed on the polishing surface of the base;
a vapor deposited layer having a structure in which one or more of Mo, Nb, and their alloys exist as a dispersed phase; artificial diamond grains that are precipitated and formed on the dispersed phase in the vapor deposited layer and are dispersed and adhere to the substrate; A diamond polishing wheel consisting of a metal surface layer formed by vapor deposition or plating on the polishing surface, and artificial diamond grains formed by precipitation.

に特徴を有するものである。It has the following characteristics.

上記基体の研磨作用面を、人工ダイヤモンド粒
が析出生成しにくい材料の間にW、Mo、および
Nb、並びにその合金のうちの1種以上が分散相
として存在する組織を有する蒸着層で構成した理
由は、次の通りである。
The polishing surface of the above substrate is placed between materials such as W, Mo, and
The reason why the deposited layer is constructed with a structure in which Nb and one or more of its alloys exist as a dispersed phase is as follows.

一般に、W、Mo、およびNb、並びにその合金
は、人工ダイヤモンドが析出生成しやすい金属と
して知られているが、上記W、Mo、およびNb、
並びにその合金の均一平滑な面に人工ダイヤモン
ドを析出生成せしめると、狭い範囲の粒度分布を
もつた人工ダイヤモンド粒(粒のそろつた人工ダ
イヤモンド粒)が均一かつ緻密に析出生成する。
ところが表面に均一かつ緻密に析出生成した粒の
そろつた人工ダイヤモンド粒が密着している研磨
作用面を有する人工ダイヤモンド研磨砥石を用い
て研磨すると、人工ダイヤモンド粒が緻密に析出
生成しているために人工ダイヤモンド粒の間に目
づまりを起こし、従来のダイヤモンド研磨砥石よ
りも研磨性能が低下する。
Generally, W, Mo, and Nb, and their alloys are known as metals in which artificial diamonds are likely to precipitate.
Furthermore, when artificial diamond is precipitated and formed on the uniform and smooth surface of the alloy, artificial diamond grains (artificial diamond grains with uniform grains) having a particle size distribution in a narrow range are precipitated uniformly and densely.
However, when polishing using an artificial diamond polishing wheel that has a polishing surface in which artificial diamond grains with uniformly and densely precipitated grains are in close contact with the surface, the artificial diamond grains are precipitated and formed in a dense manner. Clogging occurs between the artificial diamond grains, resulting in lower polishing performance than conventional diamond polishing wheels.

そこで、上記W、Mo、およびNb、並びにその
合金のうちの1種以上が人工ダイヤモンド粒の析
出生成しにくい材料の中に分散相として存在する
組織を有する蒸着層の表面に上記人工ダイヤモン
ド粒を析出生成せしめると、上記W、Mo、およ
びNb、並びにその合金のうちの1種以上からな
る分散相を中心に上記人工ダイヤモンド粒が析出
生成し、そのため上記蒸着層の表面に上記人工ダ
イヤモンド粒が分散して析出生成する。このよう
な人工ダイヤモンド粒が分散して密着した構造を
有する人工ダイヤモンド研磨砥石を用いて研磨す
ると、目づまりを起こすことなく、従来のダイヤ
モンド研磨砥石と同等の性能を付与することがで
きたのである。
Therefore, the above-mentioned artificial diamond grains are applied to the surface of a vapor deposited layer having a structure in which one or more of the above-mentioned W, Mo, Nb, and their alloys exist as a dispersed phase in a material in which artificial diamond grains are difficult to precipitate. When precipitated, the artificial diamond grains are precipitated and formed around a dispersed phase consisting of one or more of the above W, Mo, and Nb, and their alloys, so that the artificial diamond grains are deposited on the surface of the vapor deposited layer. It disperses and forms precipitates. When polished using an artificial diamond polishing wheel that has a structure in which artificial diamond grains are dispersed and adhered to each other, it was possible to provide the same performance as a conventional diamond polishing wheel without causing clogging.

つぎに、この発明のダイヤモンド研磨砥石を実
施例により具体的に説明する。
Next, the diamond polishing grindstone of the present invention will be specifically explained with reference to Examples.

実施例 1 基体として、JIS・SUS310のステンレス鋼で
製造され、かつ研磨作用面の寸法が外径:70mmφ
×内径:50mmφのカツプ状砥石本体を用意し、ま
ず、この砥石本体を、通常の化学蒸着装置に装
し、 反応ガス組成:モル%で、WF6:7%、CH4
3%、H2:40%、Ar:残り、 反応ガス流量:2/min、 砥石本体加熱温度:1000℃、 反応時間:20時間、 の条件で化学蒸着処理を施すことによつて、前記
砥石本体の研磨作用面に、平均層厚:300μmを
有し、かつW2C:50容量%、W:50容量%から
なる組成、並びに分散相としてのWの平均粒径:
0.5μmを有する蒸着層を形成し、引続いて、この
化学蒸着処理後の砥石本体を、反応混合ガスを加
熱し、活性化する手段として、例えば金属タング
ステン製フイラメントの熱電子放射材を用いる、
特開昭58−91100号公報に記載されるような人工
ダイヤモンド析出生成装置に装入し、 反応容器:外径120mmφを有する石英管、 反応混合ガス組成:容量割合で、CH4/H2
1/100、 熱電子放射材と砥石本体の研磨作用面との距
離:15mm、 反応容器内雰囲気圧力:10torr、 熱電子放射材の加熱温度:2200℃、 熱電子放射材による上記研磨作用面の加熱温
度:750℃、 反応処理時間:20時間、 の条件で処理することによつて、上記砥石本体の
研磨作用面における上記蒸着層のW分散相上に、
平均粒径:4μmの人工ダイヤモンド粒を、分布
面積:35%の割合で析出生成せしめた。
Example 1 The base is made of JIS/SUS310 stainless steel, and the polishing surface has an outer diameter of 70 mmφ.
×Inner diameter: Prepare a cup-shaped grindstone body of 50 mmφ. First, this grindstone body is loaded into a normal chemical vapor deposition equipment, and the reaction gas composition: WF 6 : 7%, CH 4 :
3%, H2 : 40%, Ar: remainder, reaction gas flow rate: 2/min, grindstone body heating temperature: 1000℃, reaction time: 20 hours. The polishing surface of the main body has an average layer thickness of 300 μm, a composition consisting of W 2 C: 50% by volume, W: 50% by volume, and an average particle size of W as a dispersed phase:
Forming a vapor deposited layer having a thickness of 0.5 μm, and subsequently applying a thermionic emissive material such as a metallic tungsten filament as a means of heating and activating the reaction mixture gas on the grinding wheel body after the chemical vapor deposition treatment.
Charged into an artificial diamond precipitation generator as described in JP-A No. 58-91100, reaction vessel: quartz tube with an outer diameter of 120 mmφ, reaction mixture gas composition: volume ratio, CH 4 /H 2 =
1/100, Distance between the thermionic emitter and the polishing surface of the grindstone body: 15 mm, Atmospheric pressure in the reaction vessel: 10 torr, Heating temperature of the thermionic emitter: 2200℃, The polishing surface of the above polishing surface by the thermionic emitter Heating temperature: 750°C, reaction treatment time: 20 hours By processing under the following conditions, on the W dispersed phase of the vapor deposited layer on the polishing surface of the grindstone body,
Artificial diamond grains with an average grain size of 4 μm were precipitated at a distribution area of 35%.

ついで、この結果から得られた本発明ダイヤモ
ンド研磨砥石を用いて、研磨面が270#に調整さ
れ、かつ平面10mm□×厚さ5mmの寸法を有する窒
化けい素基セラミツクスの前記研磨面を0.2Sに研
磨した。この場合、30秒の研磨時間を要したが、
この研磨時間は従来の結合剤としてNiを用いた
同種のダイヤモンド研磨砥石と同等のものであつ
た。
Next, using the diamond polishing wheel of the present invention obtained from this result, the polished surface of silicon nitride-based ceramics whose polished surface was adjusted to 270# and whose dimensions were 10 mm square x 5 mm thick was polished to 0.2S. Polished to In this case, it took 30 seconds of polishing time, but
This polishing time was comparable to that of a conventional diamond polishing wheel of the same type using Ni as the binder.

実施例 2 基体として、研磨作用面の寸法が外径:70mmφ
×内径:50mmφのAl合金(Si:10重量%含有)
製カツプ状砥石本体を用意し、まず、この砥石本
体を、物理蒸着法の1種である通常のイオンプレ
ーテイング法を用い、 反応容器内の真空度:5×10-4torr、 蒸発源:MoおよびTi、 Moへ照射される電子ビームの出力:15KV−
0.22A、 Tiへ照射される電子ビームの出力:10KV−
0.2A、 反応容器の底部に置かれた上記蒸発源に対向し
て反応容器の上部から5回転/分の速度で回転す
る状態で垂設された上記砥石本体への印加電圧・
電流:−200V、200mA、 砥石本体の研磨作用面の加熱温度:500℃、 反応時間:1時間、 の条件で蒸着処理を施すことによつて、前記砥石
本体の研磨作用面に、平均層厚:0.8μmを有し、
かつMoとTiとがそれぞれ面積比でMo/Ti=
2/1の割合で分散相を形成した組織を有する蒸
着層を形成し、さらに、この蒸着層形成後の砥石
本体を、反応混合ガスを加熱し、活性化する手段
として、高周波によるプラズマ放電を利用する、
特開昭58−135117号公報に記載されるような人工
ダイヤモンド析出生成装置に装入し、 反応容器:直径120mmφの石英管、 反応混合ガス組成:モル割合で、CH4/H2
Ar=1/300/300)、 反応容器内雰囲気圧力:2torr、 高周波コイルへの印加条件:周波数13.56MHz、
出力:500W、 反応処理時間:7時間、 の条件で処理することによつて、上記砥石本体の
研磨作用面における上記蒸着層のMo分散相上
に、平均粒径:1.5μmの人工ダイヤモンド粒を、
分布面積:60%の割合で析出形成させた。
Example 2 As a base, the dimensions of the polishing surface are outer diameter: 70mmφ
×Inner diameter: 50mmφ Al alloy (Si: 10% by weight content)
A cup-shaped grinding wheel body made of aluminum is prepared, and this grinding wheel body is first processed using a normal ion plating method, which is a type of physical vapor deposition method, with a vacuum level of 5 × 10 -4 torr in a reaction vessel, and an evaporation source: Output of electron beam irradiated to Mo, Ti, and Mo: 15KV−
0.22A, output of electron beam irradiated to Ti: 10KV−
0.2 A, the voltage applied to the grinding wheel body, which is vertically mounted from the top of the reaction vessel and rotating at a speed of 5 revolutions/minute, facing the evaporation source placed at the bottom of the reaction vessel.
Current: -200V, 200mA, heating temperature of the polishing surface of the grindstone body: 500℃, reaction time: 1 hour By performing the vapor deposition treatment under the following conditions, an average layer thickness is formed on the polishing surface of the grindstone body. : has 0.8μm,
And the area ratio of Mo and Ti is Mo/Ti=
A vapor deposited layer having a structure in which a dispersed phase is formed at a ratio of 2/1 is formed, and a high frequency plasma discharge is used to heat the reaction mixture gas and activate the grinding wheel body after the vapor deposited layer is formed. use,
The artificial diamond precipitation generator described in JP-A No. 58-135117 was charged, reaction vessel: quartz tube with a diameter of 120 mm, reaction mixture gas composition: molar ratio, CH 4 /H 2 /
Ar = 1/300/300), Atmospheric pressure in reaction vessel: 2 torr, Application conditions to high frequency coil: Frequency 13.56MHz,
Output: 500W, reaction treatment time: 7 hours By processing under the following conditions, artificial diamond particles with an average particle size of 1.5 μm were placed on the Mo dispersed phase of the vapor deposited layer on the polishing surface of the grindstone body. ,
Distribution area: Precipitation was formed at a rate of 60%.

つぎに、この結果得られたダイヤモンド研磨砥
石、さらにその表面に通常の条件にて平均層厚:
2μmのNiを電気メツキして金属表面層を形成し
た本発明表面被覆ダイヤモンド研磨砥石を用い、
研磨面が600# の表面粗さを有する窒化けい素基
セラミツクス試片の前記研磨面を研磨して、0.1S
に仕上げるのに要した時間を測定したところ、い
ずれも60秒を要し、この所要時間は、レジン樹脂
ボンドの同種の従来ダイヤモンド研磨砥石と同等
のものであつた。
Next, the average layer thickness on the surface of the diamond polishing wheel obtained under normal conditions:
Using the surface-coated diamond polishing wheel of the present invention, which has a metal surface layer formed by electroplating 2 μm of Ni,
The polished surface of a silicon nitride-based ceramic specimen having a surface roughness of 600# was polished to a surface roughness of 0.1S.
When we measured the time required to finish each diamond, it took 60 seconds in each case, which was the same as that of a conventional resin-bonded diamond abrasive wheel of the same type.

実施例 3 基体として、重量%で、WC:70%、TiCN:
10%、TiN:5%、TaC:2%、Co:9%、
Ni:4%からなる組成を有する超硬合金で製造
され、かつ両端面外径:50mmφ×厚さ:15mmの寸
法を有する円板の研磨作用面となる外周面中央部
に円周にそつて半径:5mmの凸条を有するフオー
ムド砥石本体を用意し、まず、この砥石本体を、
通常のスパツタリング装置に装入し、 反応容器内の真空度:2×10-3torr、 雰囲気:Ar、 反応容器の上部にそれぞれ別個に配置されたタ
ーゲツト:NbおよびCr、 Nbターゲツトに印加される電圧:−1500V、 Crターゲツトに印加される電圧:−1200V、 反応容器の下部に4回転/分の速度で回転させ
ながら立置き配置された砥石本体への印加電圧:
−200V、 砥石本体の加熱温度:700℃、 反応時間:2時間、 の条件で蒸着処理を施すことによつて、前記砥石
本体の研磨作用面(外周面)に、平均層厚:0.8μ
mを有し、かつNbとCrとがそれぞれ同等の割合
の面積比で分散した組織を有する蒸着層を形成
し、引続いて、この蒸着層形成後の砥石本体を、
反応混合ガスを加熱し、活性化する手段として、
マイクロ波によるプラズマ放電を利用する、特開
昭58−110494号公報に記載されるような人工ダイ
ヤモンド析出生成装置に装入し、 反応容器:直径120mmφを有する石英管、 反応混合ガス組成:容量割合で、CH4/H2
Ar=1/100/10)、 反応容器内の雰囲気圧力:1torr、 マイクロ波:2.45GHz、 反応処理時間:24時間、 の条件で処理することにより、上記砥石本体の研
磨作用面における上記蒸着層のNb分散相上に、
平均粒径:6μmを有する人工ダイヤモンド粒を、
45%の分布面積割合で析出生成させた。
Example 3 As a substrate, in weight%, WC: 70%, TiCN:
10%, TiN: 5%, TaC: 2%, Co: 9%,
A disk is made of cemented carbide with a composition of 4% Ni and has dimensions of outer diameter: 50 mmφ x thickness: 15 mm on both ends. Prepare a formed whetstone body with a protrusion of radius: 5mm, and first,
Charged into a normal sputtering device, vacuum level inside the reaction vessel: 2 × 10 -3 torr, atmosphere: Ar, targets placed separately at the top of the reaction vessel: Nb and Cr, applied to the Nb target. Voltage: -1500V, Voltage applied to Cr target: -1200V, Voltage applied to the grindstone body placed vertically at the bottom of the reaction vessel while rotating at a speed of 4 revolutions/min:
-200V, heating temperature of the grindstone body: 700℃, reaction time: 2 hours, By performing vapor deposition treatment under the following conditions, an average layer thickness: 0.8μ is formed on the polishing surface (outer surface) of the grindstone body.
m, and has a structure in which Nb and Cr are dispersed in equal area ratios, and then the grinding wheel body after forming this vapor deposition layer is
As a means of heating and activating the reaction mixture,
It was charged into an artificial diamond precipitation generation device as described in Japanese Patent Application Laid-open No. 110494/1983 that utilizes plasma discharge by microwaves, reaction vessel: quartz tube with a diameter of 120 mmφ, reaction mixture gas composition: capacity ratio So, CH 4 /H 2 /
Ar = 1/100/10), atmospheric pressure in reaction vessel: 1 torr, microwave: 2.45 GHz, reaction treatment time: 24 hours. on the Nb dispersed phase of
Artificial diamond grains with average grain size: 6μm,
Precipitation was generated with a distribution area ratio of 45%.

ついで、この結果得られた本発明ダイヤモンド
研磨砥石、並びにさらにこの表面に通常の条件に
て平均層厚:3μmのCuを電気メツキして金属表
面層を形成した本発明表面被覆ダイヤモンド研磨
砥石を用い、Co:12重量%、WC:残りからなる
組成を有し、かつプロフアイル加工により半径:
4.8mmの凹みを形成してある超硬合金素材の前記
凹みを仕上げ研磨したところ、90秒を要した。こ
の所要時間はレジンボンドの同種の従来ダイヤモ
ンド研磨砥石と同等のものであつた。
Next, the resulting diamond polishing wheel of the present invention was used, as well as the surface-coated diamond polishing wheel of the present invention, in which a metal surface layer was formed by electroplating Cu with an average thickness of 3 μm on the surface under normal conditions. , Co: 12% by weight, WC: the remainder, and the radius is:
Final polishing of a 4.8 mm recess in a cemented carbide material took 90 seconds. This required time was equivalent to that of a conventional resin-bonded diamond abrasive wheel of the same type.

上述のように、この発明のダイヤモンド研磨砥
石は、これを構成するダイヤモンド粒が強固な密
着力で結合し、かつ蒸着層における分散相を中心
として析出生成するのでダイヤモンド粒は上記蒸
着層表面に分散して密着した構造となり、すぐれ
た研磨性能を著しく長期に亘つて発揮し、さらに
ダイヤモンド粒を通常の人工ダイヤモンド析出生
成法によつて形成することができるので、上記の
整粒のダイヤモンド粒が形成されることと合まつ
て製造コストが安いほど工業上有用な特性を有す
るのである。
As mentioned above, in the diamond polishing wheel of the present invention, the diamond grains constituting the grinding wheel are bonded with strong adhesion and are precipitated mainly in the dispersed phase in the vapor deposited layer, so the diamond grains are dispersed on the surface of the vapor deposited layer. It forms a close-knit structure and exhibits excellent polishing performance over a long period of time.Furthermore, diamond grains can be formed using the normal artificial diamond precipitation method, so the regular diamond grains described above can be formed. The lower the manufacturing cost, the more industrially useful the properties.

Claims (1)

【特許請求の範囲】 1 金属またはサーメツトの基体と、 前記基体の研磨作用面に形成された、人工ダイ
ヤモンド粒が析出生成しにくい材料の間にW、
Mo、およびNb、並びにその合金のうちの1種以
上が分散相として存在する組織を有する蒸着層
と、 前記蒸着層における分散相上に析出生成し分散
して密着した人工ダイヤモンド粒と、 からなることを特徴とする析出生成人工ダイヤモ
ンド粒で構成されたダイヤモンド研磨砥石。 2 金属またはサーメツトの基体と、 前記基体の研磨作用面に形成された、人工ダイ
ヤモンド粒が析出生成しにくい材料の間にW、
Mo、およびNb、並びにその合金のうちの1種以
上が分散相として存在する組織を有する蒸着層
と、 前記蒸着層における分散相上に析出生成し分散
して密着した人工ダイヤモンド粒と、 前記基体の研磨作用面に蒸着またはメツキによ
り形成された金属表面層と、 からなることを特徴とする析出生成人工ダイヤモ
ンド粒で構成されたダイヤモンド研磨砥石。
[Scope of Claims] 1. Between a metal or cermet base and a material formed on the polishing surface of the base, where artificial diamond grains are difficult to precipitate, W,
A vapor deposited layer having a structure in which one or more of Mo, Nb, and their alloys exist as a dispersed phase; and artificial diamond grains that are precipitated, generated, and dispersed on the dispersed phase in the vapor deposited layer, and are closely attached to each other. A diamond polishing whetstone composed of precipitated artificial diamond grains. 2 W between a metal or cermet base and a material formed on the polishing surface of the base where artificial diamond grains are difficult to precipitate,
a vapor deposited layer having a structure in which one or more of Mo, Nb, and their alloys are present as a dispersed phase; artificial diamond grains that are precipitated on the dispersed phase in the vapor deposited layer and are dispersed and adhere to the substrate; A diamond polishing whetstone comprising precipitated artificial diamond grains, characterized by comprising: a metal surface layer formed by vapor deposition or plating on the polishing surface;
JP5804484A 1984-03-26 1984-03-26 Diamond grinding wheel composed of deposited artificial diamond particles Granted JPS60201878A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5804484A JPS60201878A (en) 1984-03-26 1984-03-26 Diamond grinding wheel composed of deposited artificial diamond particles

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5804484A JPS60201878A (en) 1984-03-26 1984-03-26 Diamond grinding wheel composed of deposited artificial diamond particles

Publications (2)

Publication Number Publication Date
JPS60201878A JPS60201878A (en) 1985-10-12
JPH0116624B2 true JPH0116624B2 (en) 1989-03-27

Family

ID=13072930

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5804484A Granted JPS60201878A (en) 1984-03-26 1984-03-26 Diamond grinding wheel composed of deposited artificial diamond particles

Country Status (1)

Country Link
JP (1) JPS60201878A (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63237870A (en) * 1987-03-26 1988-10-04 Goei Seisakusho:Kk Diamond coated grinding wheel
US5260141A (en) * 1991-11-29 1993-11-09 Regents Of The University Of Minnesota Diamond coated products
JP2008006507A (en) * 2006-06-26 2008-01-17 Ebara Corp Diamond polishing tool, diamond polishing tool creation method, diamond polishing tool regeneration method

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5855562A (en) * 1981-09-28 1983-04-01 Hitachi Ltd Polishing dish and manufacture thereof
JPS58135117A (en) * 1982-01-29 1983-08-11 Natl Inst For Res In Inorg Mater Diamond manufacturing method

Also Published As

Publication number Publication date
JPS60201878A (en) 1985-10-12

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