JPH0116625B2 - - Google Patents
Info
- Publication number
- JPH0116625B2 JPH0116625B2 JP59058045A JP5804584A JPH0116625B2 JP H0116625 B2 JPH0116625 B2 JP H0116625B2 JP 59058045 A JP59058045 A JP 59058045A JP 5804584 A JP5804584 A JP 5804584A JP H0116625 B2 JPH0116625 B2 JP H0116625B2
- Authority
- JP
- Japan
- Prior art keywords
- polishing
- artificial diamond
- diamond grains
- diamond
- artificial
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D3/00—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
- B24D3/02—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent
- B24D3/04—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent and being essentially inorganic
- B24D3/06—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent and being essentially inorganic metallic or mixture of metals with ceramic materials, e.g. hard metals, "cermets", cements
- B24D3/10—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent and being essentially inorganic metallic or mixture of metals with ceramic materials, e.g. hard metals, "cermets", cements for porous or cellular structure, e.g. for use with diamonds as abrasives
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Polishing Bodies And Polishing Tools (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Description
【発明の詳細な説明】
この発明は、ダイヤモンド研磨砥石にかかり、
特に析出生成された人工ダイヤモンド粒にて構成
された新規なダイヤモンド研磨砥石に関するもの
である。[Detailed description of the invention] This invention applies to a diamond polishing wheel,
In particular, the present invention relates to a new diamond polishing wheel made of precipitated artificial diamond grains.
従来、一般に、超硬合金やその他のサーメツ
ト、さらにセラミツクスやガラスなどの研削・研
磨にはダイヤモンド研磨砥石が用いられている。 Conventionally, diamond polishing wheels have been generally used for grinding and polishing cemented carbide, other cermets, ceramics, glass, and the like.
この従来ダイヤモンド研磨砥石は、例えばAl
やAl合金の基体の研磨作用面に、結合剤として、
レジン樹脂や、CuまたはNiなどの金属を用いて、
天然ダイヤモンド粒、あるいは超高圧高温合成に
よつて製造された人工ダイヤモンド粒を分散結合
させた構造をもつものである。 This conventional diamond polishing wheel is made of aluminum, for example.
As a bonding agent,
Using resin or metal such as Cu or Ni,
It has a structure in which natural diamond grains or artificial diamond grains manufactured by ultra-high pressure and high temperature synthesis are dispersed and bonded.
したがつて、上記の従来ダイヤモンド砥石にお
いては、天然ダイヤモンド粒や人工ダイヤモンド
粒が高価であるばかりでなく、研磨面に影響を及
ぼすダイヤモンド粒をできるだけ狭い範囲の粒度
分布に収めなければならないため、著しく長時間
の分級工程を必要とすることから、その製造コス
トは高くならざるを得ないものであつた。 Therefore, in the above-mentioned conventional diamond grinding wheels, not only are natural diamond grains and artificial diamond grains expensive, but the diamond grains that affect the polished surface must be kept within a particle size distribution as narrow as possible. Since a long classification process is required, the manufacturing cost is inevitably high.
そこで、本発明者等は、上述のような観点か
ら、狭い範囲内の粒度分布をもつたダイヤモンド
粒で構成されたダイヤモンド研磨砥石を製造コス
ト安く製造すべく研究を行なつた結果、まず、通
常の粉末冶金法を用いて、基体全体、あるいは基
体の少なくとも研磨作用面部分を、人工ダイヤモ
ンド粒の析出生成しにくい材料の間に分散相とし
て人工ダイヤモンド粒が析出生成しやすいＷ、
Mo、およびNb、並びにその合金のうちの１種以
上が存在する組織を有する焼結合金で製造し、前
記の研磨作用面部材は、ステンレス鋼やAl合金
などで製造された心材あるいは本体に焼ばめある
いはろう付けすることにより基体とし、ついでこ
の基体の研磨作用面を通常の人工ダイヤモンド析
出生成法、すなわち、反応混合ガスを加熱し、活
性化する手段として、
(a) 例えば特開昭58−91100号公報に記載される
ような熱電子放射材を用いる方法、
(b) 例えば特開昭58−135117号公報に記載される
ような高周波によるプラズマ放電を利用する方
法、
(c) 例えば特開昭58−110494号公報に記載される
ようなマイクロ波によるプラズマ放電を利用す
る方法、
以上(a)〜(c)のいずれかの方法によつて処理する
と、主として前記研磨作用面における分散相に強
固な密着力で人工ダイヤモンドが析出生成するよ
うになり、この結果の前記分散相上に析出生成し
た人工ダイヤモンド粒は粒度分布がきわめて狭い
範囲内にある粒のそろつた人工ダイヤモンド粒が
上記焼結合金表面に分散して密着し、これをダイ
ヤモン研磨砥石として使用した場合、人工ダイヤ
モンド粒の間に目づまりを起こすことなくすぐれ
た砥石性能を発揮するようになり、さらにこの表
面にNiなどの金属表面層を、通常の化学蒸着法
または物理蒸着法にて蒸着形成したり、あるいは
電解メツキ法または無電解メツキ法によりメツキ
形成した場合には、前記析出生成人工ダイヤモン
ド粒の密着性が一段と向上するようになり、しか
もこのダイヤモンド研磨砥石の製造コストは著し
く安価であるという知見を得たのである。 Therefore, from the above-mentioned viewpoint, the present inventors conducted research to manufacture a diamond polishing wheel composed of diamond grains with a narrow particle size distribution at a low manufacturing cost. Using the powder metallurgy method, the entire base, or at least the polishing surface portion of the base, is made of W, in which artificial diamond grains tend to precipitate as a dispersed phase between materials in which artificial diamond grains are difficult to precipitate.
The polishing surface member is manufactured from a sintered alloy having a structure in which one or more of Mo, Nb, and their alloys are present, and the polishing surface member is sintered to a core or main body made of stainless steel, Al alloy, etc. A substrate is formed by fitting or brazing, and then the polishing surface of this substrate is used as a means for producing conventional artificial diamond precipitation, that is, as a means of heating and activating a reaction mixture gas. -91100, a method using a thermionic emissive material, (b) a method using high-frequency plasma discharge, for example, as described in JP-A-58-135117, (c) a method using a high-frequency plasma discharge, e.g. A method using microwave plasma discharge as described in Japanese Patent Publication No. 110494/1984, or a method using any of the above methods (a) to (c), mainly removes the dispersed phase on the polishing surface. As a result, artificial diamond particles are precipitated and formed on the dispersed phase, and the artificial diamond grains have uniform particle size distribution within an extremely narrow range. It is dispersed and adheres to the surface of the alloy, and when used as a diamond polishing whetstone, it exhibits excellent whetstone performance without clogging between the artificial diamond grains. When the surface layer is formed by vapor deposition using a normal chemical vapor deposition method or physical vapor deposition method, or when plating is formed using an electrolytic plating method or an electroless plating method, the adhesion of the precipitated artificial diamond particles is further improved. Moreover, they discovered that the manufacturing cost of this diamond polishing wheel was extremely low.
この発明は、上記知見にもとづいてなされたも
のであつて、
(1) 基体全体または基体の少なくとも研磨作用面
部分が、分散相としてＷ、Mo、およびNb、並
びにその合金のうちの１種以上が存在する組織
を有する焼結合金で構成され、かつ前記基体の
研磨作用面における前記分散相上には人工ダイ
ヤモンド析出生成法により形成した人工ダイヤ
モンド粒が分散して密着した構造を有するダイ
ヤモンド研磨砥石。 The present invention has been made based on the above findings, and provides the following: (1) The entire substrate or at least the polishing surface portion of the substrate contains one or more of W, Mo, and Nb, and alloys thereof as a dispersed phase. a diamond polishing wheel, which is made of a sintered alloy having a structure in which the polishing surface of the base body has a structure in which artificial diamond grains formed by an artificial diamond precipitation method are dispersed and adhered to the dispersed phase on the polishing surface of the base body. .
(2) 基体全体または基体の少なくとも研磨作用面
部分が、分散相としてＷ、Mo、およびNb、並
びにその合金のうちの１種以上が存在する組織
を有する焼結合金で構成され、かつ前記基体の
研磨作用面における前記分散相上には人工ダイ
ヤモンド析出生成法により形成した人工ダイヤ
モンド粒が分散して密着した構造を有し、さら
にその表面に蒸着またはメツキにより形成した
金属表面層を有するダイヤモンド研磨砥石。(2) The entire substrate or at least the polishing surface portion of the substrate is composed of a sintered alloy having a structure in which one or more of W, Mo, and Nb and alloys thereof are present as a dispersed phase, and the substrate Diamond polishing having a structure in which artificial diamond grains formed by an artificial diamond precipitation method are dispersed and adhered to the dispersed phase on the polishing action surface, and further has a metal surface layer formed by vapor deposition or plating on the surface. Whetstone.
に特徴を有するものである。It has the following characteristics.
上記基体全体または少なくとも研磨作用面部分
を、人工ダイヤモンド粒が析出生成しにくい材料
の間にＷ、Mo、およびNb、並びにその合金のう
ちの１種以上が分散相として存在する組織を有す
る焼結合金で構成した理由は、次の通りである。 The entire base or at least the polishing surface is sintered and has a structure in which one or more of W, Mo, and Nb, and one or more of their alloys exist as a dispersed phase between materials in which artificial diamond grains are difficult to precipitate and form. The reason for using gold is as follows.
一般に、Ｗ、Mo、およびNb、並びにその合金
は、人工ダイヤモンドが析出生成しやすい金属と
して知られているが、上記Ｗ、Mo、およびNb、
並びにその合金の均一平滑な面に人工ダイヤモン
ドを析出生成せしめると、狭い範囲の粒度分布を
もつた人工ダイヤモンド粒（粒のそろつた人工ダ
イヤモンド粒）が均一かつ緻密に析出生成する。
ところが過剰に均一かつ緻密に析出生成した人工
ダイヤモンド粒が密着している研磨作用面を有す
る人工ダイヤモンド研磨砥石を用いて研磨する
と、人工ダイヤモンド粒が緻密に析出生成してい
るために人工ダイヤモンド粒の間に目づまりを起
こし、従来のダイヤモンド研磨砥石よりも研磨性
能が低下する。 Generally, W, Mo, and Nb, and their alloys are known as metals in which artificial diamonds are likely to precipitate.
Furthermore, when artificial diamond is precipitated and formed on the uniform and smooth surface of the alloy, artificial diamond grains (artificial diamond grains with uniform grains) having a particle size distribution in a narrow range are precipitated uniformly and densely.
However, when polishing is performed using an artificial diamond polishing wheel that has a polishing surface in which artificial diamond grains are deposited in an excessively uniform and dense manner, the artificial diamond grains are deposited in a dense manner and the artificial diamond grains are This causes clogging between the wheels, resulting in lower polishing performance than conventional diamond polishing wheels.
これを防止するために、上記Ｗ、Mo、および
Nb、並びにその合金のうちの１種以上が人工ダ
イヤモンド粒の析出生成しにくい材料の間に分散
相として存在する焼結合金を作製し、この焼結合
金の表面に上記人工ダイヤモンド粒を分散して析
出生成せしめ、このような人工ダイヤモンド粒が
分散して密着した構造を有する人工ダイヤモンド
研磨砥石を用いて研磨すると、目づまりを起こす
ことなく、従来のダイヤモンド研磨砥石と同等の
性能を付与することができたのである。 In order to prevent this, the above W, Mo, and
A sintered alloy in which Nb and one or more of its alloys exist as a dispersed phase between materials in which artificial diamond grains are difficult to precipitate is prepared, and the artificial diamond grains are dispersed on the surface of this sintered alloy. When polished using an artificial diamond polishing wheel that has a structure in which artificial diamond particles are dispersed and adhered to each other, it is possible to provide the same performance as a conventional diamond polishing wheel without causing clogging. It was done.
つぎに、この発明のダイヤモンド研磨砥石を実
施例により具体的に説明する。 Next, the diamond polishing grindstone of the present invention will be specifically explained with reference to Examples.
実施例 １
通常の粉末冶金法にしたがつて、原料粉末とし
て、平均粒径：1.2μｍを有するＷ粉末、同3μｍの
Ni粉末、および同5μｍのCu粉末を用意し、これ
ら原料粉末を、容量％で、Ｗ：80％、Ni：15％、
Cu：５％の配合組成に配合し、この配合粉末を、
直径：６mmφの鋼球を用いたボールミルにて、溶
媒としてエチルアルコールを使用して72時間湿式
混合し、乾燥した後、、外径：70mmφ×内径：50
mmφ×厚さ：５mmの寸法をもつたリング状圧粉体
にプレス成形し、ついでこの圧粉体を、水素雰囲
気中、温度：1400℃に２時間保持の条件で焼結す
ることによつて、分散相としてＷが存在する組織
を有するＷ基焼結合金製の研磨作用面部材を製造
し、さらにこの研磨作用面部材をJIS・SUS310
のステンレス鋼で製造されたカツプ状砥石本体に
ろう付けして砥石基体とし、引続いて、この砥石
基体を、反応混合ガスを加熱し、活性化する手段
として、例えば金属タングステン製フイラメント
の熱電子放射材を用いる、特開昭58−91100号公
報に記載されるような人工ダイヤモンド析出生成
装置に装入し、
反応容器：外径120mmφを有する石英管、
反応混合ガス組成：容量割合で、CH4／H2＝1/1
００、
熱電子放射材と砥石基体の研磨作用面との距離：
15mm、
反応容器内雰囲気圧力：10torr、
熱電子放射材の加熱温度：2200℃、
熱電子放射材による上記研磨作用面の加熱温度：
750℃、
反応処理時間：20時間、
の条件で処理することによつて、上記砥石基体の
研磨作用面における上記蒸着層のＷ分散相上に、
平均粒径：4μｍの人工ダイヤモンド粒を、分布
面積：60％の割合で析出生成せしめた。Example 1 According to a normal powder metallurgy method, W powder with an average particle size of 1.2 μm and W powder with an average particle size of 3 μm were used as raw powder.
Ni powder and Cu powder of the same 5 μm are prepared, and these raw powders are divided into volume percentages: W: 80%, Ni: 15%,
Cu: 5% blended powder,
After wet mixing for 72 hours using ethyl alcohol as a solvent in a ball mill using steel balls with a diameter of 6 mmφ, and drying, outer diameter: 70 mmφ x inner diameter: 50
By press-forming into a ring-shaped compact with dimensions of mmφ x thickness: 5 mm, and then sintering this compact in a hydrogen atmosphere at a temperature of 1400°C for 2 hours. , a polishing surface member made of a W-based sintered alloy having a structure in which W is present as a dispersed phase is manufactured, and this polishing surface member is further processed according to JIS/SUS310.
The grinding wheel base is brazed to a cup-shaped grinding wheel body made of stainless steel, and the grinding wheel base is then heated with a thermionic gas of a metallic tungsten filament, for example, as a means of heating and activating the reaction mixture gas. Charged into an artificial diamond precipitation generator using a radioactive material as described in JP-A No. 58-91100, reaction vessel: quartz tube with an outer diameter of 120 mmφ, reaction mixture gas composition: volume ratio, CH 4 / H2 =1/1
00, Distance between the thermionic emitting material and the polishing surface of the grindstone base:
15 mm, Atmospheric pressure inside the reaction vessel: 10 torr, Heating temperature of the thermionic emitter: 2200℃, Heating temperature of the above polishing surface by the thermionic emitter:
By processing under the conditions of 750°C and reaction treatment time: 20 hours, on the W dispersed phase of the vapor deposited layer on the polishing surface of the grindstone base,
Artificial diamond grains with an average grain size of 4 μm were precipitated with a distribution area of 60%.
つぎに、この結果得られた本発明のダイヤモン
ド研磨砥石、さらにその表面に、通常のスパツタ
リング法を用い、
反応容器内真空度：２×10-3torr、
雰囲気：Ar、
Niターゲツトへの印加電圧：−1200V、
砥石（４回転／分で回転）への印加電圧：−
200V、
処理時間：１時間、
の条件で平均層厚：2μｍのNiからなる金属表面
層を蒸着させた本発明表面被覆ダイヤモンド研磨
砥石について、研磨面が270＃
に調整され、かつ
平面10mm□×厚さ５mmの寸法を有する窒化けい素
基セラミツクス試片の前記研磨面を研磨して、
0.2Sに仕上げるのに要する時間を測定したとこ
ろ、いずれも25秒を要し、この所定時間はレジン
ボンドの同種の従来ダイヤモンド研磨砥石と同等
のものであつた。 Next, the surface of the diamond polishing wheel of the present invention thus obtained was subjected to a normal sputtering method, vacuum level in the reaction vessel: 2×10 -3 torr, atmosphere: Ar, voltage applied to the Ni target. :-1200V, voltage applied to the grinding wheel (rotating at 4 revolutions/min):-
The surface-coated diamond polishing wheel of the present invention was coated with a metal surface layer made of Ni with an average layer thickness of 2 μm under the following conditions: 200V, processing time: 1 hour, and the polishing surface was adjusted to 270#, and the flat surface was 10mm□× Polishing the polished surface of a silicon nitride-based ceramic specimen having a thickness of 5 mm,
When we measured the time required to finish to 0.2S, it took 25 seconds in each case, and this predetermined time was equivalent to that of a conventional resin-bonded diamond polishing whetstone of the same type.
実施例 ２
同様に、通常の粉末冶金法にしたがい、原料粉
末として平均粒径：1.5μｍを有するMo粉末、同
1.8μｍを有するNb粉末、同2μｍを有するCo粉
末、同5μｍのCu粉末、および同5μｍのMn粉末を
用意し、これら原料粉末を、容量％で、Mo：30
％、Nb：25％、Co：20％、Cu：17％、Mn：８
％からなる配合組成に配合し、またリング状圧粉
体の形状を、外径：50mmφ×内径：30mmφ×厚
さ：15mmとすると共に、その研磨作用面となる外
周面の中央部に円周にそつて半径：５mmの凸条を
有するものとし、かつ焼結条件を、水素雰囲気
中、、温度：1350℃に１時間保持とする以外は、
実施例１におけると同一の条件で、分散相として
Mo、Nb、およびその合金が存在する組織を有す
る焼結合金製の研磨作用面部材を製造し、さらに
この研磨作用面部材を、直径：30mmφ×厚さ：15
mmの寸法を有する真ちゆう製の心材に焼ばめする
ことによりフオームド砥石基体とし、引続いて、
この砥石基体を、反応混合ガスを加熱し、活性化
する手段として、マイクロ波によるプラズマ放電
を利用する、特開昭58−110494号公報に記載され
るような人工ダイヤモンド析出生成装置に装入
し、
反応容器：直径120mmφを有する石英管、
反応混合ガス組成：容量割合で、CH4／H2／Ar
＝１／100／10）、
反応容器内の雰囲気圧力：1torr、
マイクロ波：2.45GHz、
反応処理時間：24時間、
の条件で処理することにより、上記砥石本体の研
磨作用面における分散相上に平均粒径：6μｍを
有する人工ダイヤモンド粒を50％の分布面積割合
で析出生成させた。Example 2 Similarly, according to the usual powder metallurgy method, Mo powder having an average particle size of 1.5 μm and the same
Prepare Nb powder with a diameter of 1.8 μm, Co powder with a diameter of 2 μm, Cu powder with a diameter of 5 μm, and Mn powder with a diameter of 5 μm.
%, Nb: 25%, Co: 20%, Cu: 17%, Mn: 8
%, and the shape of the ring-shaped green compact is outer diameter: 50 mmφ x inner diameter: 30 mmφ x thickness: 15 mm, and a circumference is set at the center of the outer peripheral surface, which will be the polishing surface. The sintering conditions were as follows: a convex strip with a radius of 5 mm along the sintering conditions, and the temperature was maintained at 1350°C for 1 hour in a hydrogen atmosphere.
Under the same conditions as in Example 1, as a dispersed phase
A polishing surface member made of a sintered alloy having a structure in which Mo, Nb, and their alloys are present is manufactured, and this polishing surface member is further manufactured using a polishing surface member having a diameter of 30 mmφ and a thickness of 15 mm.
A formed grinding wheel base is formed by shrink-fitting it onto a brass core material having dimensions of mm, and subsequently,
This grinding wheel base body is loaded into an artificial diamond precipitation generating device as described in Japanese Patent Application Laid-open No. 110494/1983, which utilizes plasma discharge by microwaves as a means of heating and activating the reaction mixture gas. , Reaction vessel: quartz tube with a diameter of 120 mmφ, Reaction mixture gas composition: CH 4 /H 2 /Ar by volume ratio
= 1/100/10), atmospheric pressure in the reaction vessel: 1 torr, microwave: 2.45 GHz, reaction treatment time: 24 hours. Artificial diamond grains having an average grain size of 6 μm were precipitated with a distribution area ratio of 50%.
ついで、この結果得られた本発明ダイヤモンド
研磨砥石、並びにさらにこの表面に通常の条件に
て平均層厚：3μｍのCuを電気メツキして金属表
面層を形成した本発明表面被覆ダイヤモンド研磨
砥石を用い、Co：12重量％、WC：残りからなる
組成を有し、かつプロフアイル加工により半径：
4.8mmの凹みを形成してある超硬合金素材の前記
凹みを仕上げ研磨したところ、110秒を要した。
この所要時間はレジンボンドの同種の従来ダイヤ
モンド研磨砥石と同等のものであつた。 Next, the resulting diamond polishing wheel of the present invention was used, as well as the surface-coated diamond polishing wheel of the present invention, in which a metal surface layer was formed by electroplating Cu with an average thickness of 3 μm on the surface under normal conditions. , Co: 12% by weight, WC: the remainder, and the radius is:
Final polishing of a 4.8 mm recess in a cemented carbide material took 110 seconds.
This required time was equivalent to that of a conventional resin-bonded diamond abrasive wheel of the same type.
上述のように、この発明のダイヤモンド研磨砥
石は、これを構成するダイヤモンド粒が強固な密
着力で結合し、かつ、焼結合金における分散相を
中心として析出生成するのでダイヤモンド粒は上
記焼結合金表面に分散して密着した構造となるの
で、すぐれた研磨性能を著しく長期に亘つて発揮
し、さらにダイヤモンド粒を通常の人工ダイヤモ
ンド析出生成法によつて形成することができるの
で、整粒の人工ダイヤモンド粒が形成されること
と合まつて製造コストが安いなど工業上有用な特
性を有するのである。 As mentioned above, in the diamond polishing wheel of the present invention, the diamond grains constituting the grinding wheel are bonded with strong adhesion and are precipitated mainly in the dispersed phase of the sintered alloy. Because it has a structure that is dispersed and adheres to the surface, it exhibits excellent polishing performance over a long period of time.Furthermore, diamond grains can be formed using the normal artificial diamond precipitation method, so it is possible to create an artificial diamond particle size distribution method. Together with the formation of diamond grains, it has industrially useful properties such as low manufacturing costs.
Claims (1)
部分が、人工ダイヤモンド粒が析出生成しにくい
材料の間にＷ、Mo、およびNb、並びにその合金
のうちの１種以上が分散相として存在する組織を
有する焼結合金で構成され、かつ前記基体の研磨
作用面における前記分散相上には人工ダイヤモン
ド析出生成法により形成した人工ダイヤモンド粒
子が分散して密着した構造を有することを特徴と
する析出生成人工ダイヤモンド粒で構成されたダ
イヤモンド研磨砥石。 ２ 基体全体または基体の少なくとも研磨作用面
部分が、人工ダイヤモンド粒が析出生成しにくい
材料の間にＷ、Mo、およびNb、並びにその合金
のうちの１種以上が分散相として存在する組織を
有する焼結合金で構成され、かつ前記基体の研磨
作用面における前記分散相上には人工ダイヤモン
ド析出生成法により形成した人工ダイヤモンド粒
が分散して密着した構造を有し、さらにその表面
に蒸着またはメツキにより形成した金属表面層を
有することを特徴とする析出生成人工ダイヤモン
ド粒で構成されたダイヤモンド研磨砥石。[Scope of Claims] 1. The entire substrate or at least the polishing surface portion of the substrate is made of a material in which artificial diamond grains are difficult to precipitate, and one or more of W, Mo, and Nb, and their alloys are dispersed in the material. It is characterized in that it is composed of a sintered alloy having a structure existing as A diamond polishing wheel composed of precipitated artificial diamond grains. 2. The entire substrate or at least the polishing surface portion of the substrate has a structure in which one or more of W, Mo, and Nb, and one or more of their alloys exist as a dispersed phase between materials in which artificial diamond grains are difficult to precipitate and form. It is composed of a sintered alloy, and has a structure in which artificial diamond grains formed by an artificial diamond precipitation method are dispersed and adhered to the dispersed phase on the polishing surface of the base, and the surface is further coated with vapor deposition or plating. 1. A diamond polishing whetstone comprised of precipitated artificial diamond grains, characterized by having a metal surface layer formed by:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5804584A JPS60201879A (en) | 1984-03-26 | 1984-03-26 | Diamond grinding wheel composed of deposited diamond particles |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5804584A JPS60201879A (en) | 1984-03-26 | 1984-03-26 | Diamond grinding wheel composed of deposited diamond particles |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60201879A JPS60201879A (en) | 1985-10-12 |
| JPH0116625B2 true JPH0116625B2 (en) | 1989-03-27 |
Family
ID=13072957
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5804584A Granted JPS60201879A (en) | 1984-03-26 | 1984-03-26 | Diamond grinding wheel composed of deposited diamond particles |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60201879A (en) |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5855562A (en) * | 1981-09-28 | 1983-04-01 | Hitachi Ltd | Polishing dish and manufacture thereof |
| JPS58135117A (en) * | 1982-01-29 | 1983-08-11 | Natl Inst For Res In Inorg Mater | Diamond manufacturing method |
-
1984
- 1984-03-26 JP JP5804584A patent/JPS60201879A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS60201879A (en) | 1985-10-12 |
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