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JPH0129475B2 - - Google Patents
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JPH0129475B2 - - Google Patents

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Publication number
JPH0129475B2
JPH0129475B2 JP58181706A JP18170683A JPH0129475B2 JP H0129475 B2 JPH0129475 B2 JP H0129475B2 JP 58181706 A JP58181706 A JP 58181706A JP 18170683 A JP18170683 A JP 18170683A JP H0129475 B2 JPH0129475 B2 JP H0129475B2
Authority
JP
Japan
Prior art keywords
defect
memory
solid
state image
image sensor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP58181706A
Other languages
Japanese (ja)
Other versions
JPS6070879A (en
Inventor
Masaki Takakura
Yasukuni Yamane
Nobutoshi Gako
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP58181706A priority Critical patent/JPS6070879A/en
Publication of JPS6070879A publication Critical patent/JPS6070879A/en
Publication of JPH0129475B2 publication Critical patent/JPH0129475B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/68Noise processing, e.g. detecting, correcting, reducing or removing noise applied to defects

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Picture Signal Circuits (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)

Description

【発明の詳細な説明】 <技術分野> 本発明は固体撮像素子の欠陥補償回路に関する
ものである。
DETAILED DESCRIPTION OF THE INVENTION <Technical Field> The present invention relates to a defect compensation circuit for a solid-state image sensor.

<従来技術> CCD等を用いた固体撮像素子は無欠陥な素子
を製造するのが困難であり、製造歩留りが悪いこ
とが問題となつている。そのため電気的な回路を
付加して欠陥補償を行ない、数点の欠陥を含む素
子を実用レベルにし、実質的な歩留りを向上させ
る方法が種々考案されている。それらの方法の1
つに欠陥位置をあらかじめメモリに記憶させてお
き、欠陥点のデータを近接する正常点のデータに
置換するという補正方法がある。
<Prior Art> It is difficult to manufacture a defect-free solid-state imaging device using a CCD or the like, and the problem is that the manufacturing yield is low. For this reason, various methods have been devised to compensate for defects by adding electrical circuits, to bring elements containing several defects to a practical level, and to substantially improve yield. One of those methods
One of the correction methods is to store the defect position in advance in a memory and replace the data of the defective point with data of a nearby normal point.

第1図に従来の欠陥補償装置の1例を示す。1
は固体撮像素子、2は遅延回路、3はアナログス
イツチ、4は固体撮像素子1の欠陥位置情報を記
憶するメモリ、5はメモリ4のアドレスを計数す
るカウンタ、6は画素の位置を計数するカウン
タ、7は各回路の制御信号を与えるパルス発生器
である。メモリ4には、基準点から1番目の欠陥
点まで何クロツク離れているかの情報I1と、n番
め以降の欠陥点がn―1番めの欠陥点から何クロ
ツク離れているかの情報In(n≧2)が記憶され
ている。固体撮像素子1より1画面出力されるご
とにアドレスカウンタ5が0にリセツトされ、メ
モリ4の先頭に記憶された情報I1が読み出されて
カウンタ6にロードされる。カウンタ6は固体撮
像素子1の転送クロツクに同期したパルス発生器
7から出力されるクロツクφ5により減算される。
カウンタ6に転送された情報I1の値は、固体撮像
素子1が1番めの欠陥点のデータを出力する時に
丁度カウンタ6が0になり、補正パルスTが出力
される関係に設定される。このようにして欠陥点
のデータに同期した補正パルスTが出力される。
補正パルスTはアナログスイツチ3に与えられて
接点の切換えを制御し、欠陥データが検出された
画素は遅延回路2をとおつた近接点の正常なデー
タに置換される。
FIG. 1 shows an example of a conventional defect compensation device. 1
is a solid-state image sensor, 2 is a delay circuit, 3 is an analog switch, 4 is a memory that stores defect position information of the solid-state image sensor 1, 5 is a counter that counts addresses of the memory 4, and 6 is a counter that counts pixel positions. , 7 is a pulse generator that provides control signals for each circuit. The memory 4 contains information I1 about how many clocks are away from the reference point to the first defective point, and information In how many clocks are away from the n-th and subsequent defective points from the n-1st defective point. (n≧2) is stored. Each time one screen is output from the solid-state image sensor 1, the address counter 5 is reset to 0, and the information I1 stored at the beginning of the memory 4 is read out and loaded into the counter 6. The counter 6 is subtracted by a clock φ 5 outputted from a pulse generator 7 synchronized with the transfer clock of the solid-state image sensor 1 .
The value of the information I1 transferred to the counter 6 is set in such a way that the counter 6 becomes 0 exactly when the solid-state image sensor 1 outputs the data of the first defective point, and the correction pulse T is output. . In this way, the correction pulse T synchronized with the data of the defective point is output.
The correction pulse T is applied to the analog switch 3 to control switching of the contacts, and the pixel in which defective data is detected is replaced with normal data from a nearby point through the delay circuit 2.

第2図にアナログスイツチ3の入力S0,S1と出
力信号S2を示す。S0が固体撮像素子1からの直接
の信号、S1が遅延回路2の出力信号、Tが補償パ
ルス、S2がアナログスイツチ3の出力信号で、欠
陥補償がなされた結果である。画素位置カウンタ
6から補正パルスTが出力されるとアドレスカウ
ンタ5は1つ加算され、メモリ4に記憶された情
報I2がカウンタ6にロードされる。続いて上記動
作と同様にカウンタ6がφsにより減算され、0に
なつた時補正ハルスTが出力される。以上のくり
かえしにより、メモリ4に記憶された情報に従い
欠陥補償が行なわれる。
FIG. 2 shows the inputs S 0 and S 1 and the output signal S 2 of the analog switch 3. S 0 is a direct signal from the solid-state image sensor 1, S 1 is an output signal of the delay circuit 2, T is a compensation pulse, and S 2 is an output signal of the analog switch 3, which is the result of defect compensation. When the correction pulse T is output from the pixel position counter 6, the address counter 5 is incremented by one, and the information I2 stored in the memory 4 is loaded into the counter 6. Subsequently, the counter 6 is subtracted by φ s in the same manner as in the above operation, and when it becomes 0, the corrected Hals T is output. By repeating the above steps, defect compensation is performed according to the information stored in the memory 4.

ところでこのような欠陥補償方式で欠陥位置を
記憶するのに必要な情報量は、固体撮像素子1の
分解能を縦500×横400程度とすると、 500×400=200000となり、 217<200000<218であるので、1画面の位置情報
を記憶するためには18ビツト必要である。ところ
が、現在市場にあるメモリは8ビツト構成が主体
であり、これを使用すれば、18ビツトを記憶する
ために8×3の24ビツト使用することになり、メ
モリの記憶効率が悪くなる。またビツト数が24ビ
ツトに増えることにより回路が複雑化し、欠陥補
償回路を安価に構成する妨げとなつていた。
By the way, the amount of information required to memorize the defect position using this defect compensation method is 500 x 400 = 200000, assuming that the resolution of the solid-state image sensor 1 is approximately 500 x 400, and 2 17 < 200000 < 2. 18 , so 18 bits are required to store the position information for one screen. However, most of the memories currently on the market have an 8-bit configuration, and if this is used, 24 bits (8 x 3) will be used to store 18 bits, resulting in poor memory storage efficiency. Furthermore, as the number of bits increases to 24 bits, the circuit becomes more complex, which hinders the construction of defect compensation circuits at low cost.

<発明の目的> 本発明は上記従来の欠陥補償回路の欠点を除去
し、所定のビツト数(例えば16ビツト)のメモリ
に位置情報を記憶させるようにした回路におい
て、上記の所定のビツト数では表現出来ない欠陥
(間隔が所定のビツト数以上である欠陥位置)を、
仮の欠陥点を設けることにより、所定のビツト数
で表現できるようになして、メモリの利用効率を
高め得る固体撮像素子の欠陥補償回路を提供する
ものである。
<Object of the Invention> The present invention eliminates the drawbacks of the conventional defect compensation circuit described above, and provides a circuit that stores position information in a memory of a predetermined number of bits (for example, 16 bits). Defects that cannot be expressed (defect positions whose interval is more than a predetermined number of bits) are
The present invention provides a defect compensation circuit for a solid-state image sensing device that can improve memory utilization efficiency by providing a temporary defect point so that it can be expressed with a predetermined number of bits.

<実施例> まず第3図a,bは奇数フイールド、偶数フイ
ールドを示す固体撮像素子のインタレース方式に
よる走査の様子を示したもので、図中Aが実際の
表示期間、Bが水平帰線期間、Cが垂直帰線期間
にあたる。
<Example> First, Figures 3a and 3b show the state of scanning by the interlaced method of a solid-state image sensor showing odd and even fields, where A is the actual display period and B is the horizontal retrace line. The period C corresponds to the vertical retrace period.

第4図は固体撮像素子の1フレーム中の基本ク
ロツクパルスを示したものである。A期間内のパ
ルスが転送クロツクに相当し、このパルスに同期
して画像情報が送出され、水平帰線期間Bと垂直
帰線期間C間では画像情報は送出されない。ここ
でメモリ領域の効率的な利用を図つて欠陥位置情
報を記憶させるために、第4図のように基本クロ
ツクパルスに先頭から番号を付け、最初の欠陥位
置はそのパルス番号を記憶し、nを2以上の数と
してn番目の欠陥位置はそのパルスとn―1番め
の欠陥に対応するパルスとの間に存在するパルス
の数によつて相対距離を記憶させる。この相対距
離がとりうる最大の値は1フレームに含まれるパ
ルス数程度であり、その数Nは縦500横400の分解
能を持つ固体撮像素子では217<N<218である。
このように相対距離は16ビツトでは表現できない
場合がありうる。この場合に対処するため実際の
欠陥と欠陥の間に予め仮の欠陥を数点設定し、欠
陥点と欠陥点との相対距離をすべて216未満とす
る。即ち8ビツトの整数倍で且つより少ない容量
内で記憶させる。
FIG. 4 shows basic clock pulses in one frame of the solid-state image sensor. The pulse within period A corresponds to a transfer clock, and image information is transmitted in synchronization with this pulse, and no image information is transmitted between horizontal retrace period B and vertical retrace period C. In order to store defect position information in order to efficiently use the memory area, numbers are assigned to the basic clock pulses from the beginning as shown in Figure 4, and the pulse number of the first defect position is memorized, and n is For the nth defect position, which is a number greater than or equal to 2, the relative distance is stored by the number of pulses existing between that pulse and the pulse corresponding to the (n-1)th defect. The maximum value that this relative distance can take is about the number of pulses included in one frame, and the number N is 2 17 <N < 2 18 for a solid-state image sensor with a resolution of 500 vertically and 400 horizontally.
In this way, there may be cases where relative distance cannot be expressed using 16 bits. To deal with this case, several temporary defects are set in advance between the actual defects, and the relative distances between the defect points are all set to be less than 2 16 . That is, it is stored as an integral multiple of 8 bits and within a smaller capacity.

また、補償回路を簡略化するためには、上記設
定された仮の欠陥は実際の欠陥と区別せず同等に
扱う方が都合がよい。ところが仮の欠陥点にも補
償を行なえば画像によつてその点に補償誤差が生
ずるという問題がある。
Furthermore, in order to simplify the compensation circuit, it is convenient to treat the set temporary defect as the same without distinguishing it from the actual defect. However, if compensation is performed even on a temporary defective point, there is a problem in that a compensation error will occur at that point depending on the image.

そのため本実施例では、上記仮の欠陥点を表示
に関係ない水平帰線期間B内の点に設定する。即
ち欠陥点の位置情報をパルスの相対位置を使用し
て記憶させ、もしその情報量が16ビツトを越える
場合は欠陥点の間の適当な水平帰線期間内の数点
を仮の欠陥点として記憶させることにより、各欠
陥点間の相対距離を、216未満にする。仮の欠陥
点をどの水平帰線期間のどのパルスに設定するか
は何通りにも設定できるが、どのように選ぶかは
本質的な問題ではない。また必要な仮の欠陥数は
218÷216=4であるから、最大4〜5点設定すれ
ばよくメモリの容量に影響を与えるものではな
い。
Therefore, in this embodiment, the temporary defect point is set to a point within the horizontal retrace period B that is unrelated to display. In other words, the position information of the defective point is stored using the relative position of the pulse, and if the amount of information exceeds 16 bits, several points within an appropriate horizontal retrace interval between the defective points are stored as temporary defective points. By storing, the relative distance between each defect point is set to be less than 216 . The temporary defect point can be set at which pulse in which horizontal retrace period in any number of ways, but how it is selected is not an essential problem. Also, the required number of temporary defects is
Since 2 18 ÷ 2 16 = 4, it is sufficient to set a maximum of 4 to 5 points and the memory capacity will not be affected.

以上の説明は2番目以降の欠陥位置とその1つ
前の欠陥位置との相対距離に関して述べたが、1
番目の欠陥位置が216個以上のパルスを計数した
位置に存在する場合でも、同様の考え方で1番め
の欠陥より前に仮の欠陥点を数点設定することに
より、欠陥位置を16ビツトで表現することができ
る。第5図は実際の欠陥点がA1とA2である撮像
素子について水平帰線期間B内にB1,B2,B3
仮の欠陥点を設定することにより各欠陥点の相対
距離を216未満にできることを示す。
The above explanation was about the relative distance between the second and subsequent defect positions and the previous defect position, but 1
Even if the second defect position exists at a position where 216 or more pulses were counted, by setting several temporary defect points before the first defect using the same concept, the defect position can be set to 16 bits. It can be expressed as Figure 5 shows the relative distance of each defective point by setting temporary defective points B1 , B2 , and B3 within the horizontal blanking period B for an image sensor whose actual defective points are A1 and A2 . Show that it can be made less than 2 16 .

第6図に本発明の一実施例の回路ブロツク図を
示す。図中メモリを除く他の構成は第1図と同じ
で説明を略する。メモリ8には実際の欠陥点と上
述のように表示に関係のない期間を選んで与えた
仮の欠陥点の位置を与える16ビツトの情報が記憶
されている。
FIG. 6 shows a circuit block diagram of an embodiment of the present invention. The other configurations in the figure except for the memory are the same as in FIG. 1, and their explanation will be omitted. The memory 8 stores 16-bit information indicating the positions of actual defective points and temporary defective points selected from periods unrelated to display as described above.

まず固体撮像素子1より1画面が出力されるご
とにアドレスカウンタ5は0にリセツトされ、メ
モリ8の先頭に記憶された16ビツトの情報I1′が
カウンタ6にロードされる。次に固体撮像素子1
の基本クロツクφによりカウンタ6は減算され
る。I1′の値は最初の欠陥点もしくは、仮の欠陥
点のパルス位置で、カウンタ6が0になり補正パ
ルスTが出力される値にあらかじめ設定される。
補正パルスTの制御によりアナログスイツチ3が
切換えられ、固体撮像素子1の出力は遅延回路2
をとおつた近接点のデータに置換される。ここで
実際の欠陥点であれば第2図のように欠陥の補償
が行なわれる。また仮の欠陥点であれば同じくデ
ータの置換が行なわれるが、仮の欠陥点は水平帰
線期間B内の点に選んでいるため表示にはなんら
影響を与えない。補正パルスTが出力されるとア
ドレスカウンタ5は1つ加算され、メモリ8に記
憶された16ビツトの情報I2′がカウンタ6にロー
ドされる。以上の動作をくりかえしてカウンタ6
がφにより減算され、内容が0になつた時次の補
正パルスTが出力される。
First, each time one screen is output from the solid-state image sensor 1, the address counter 5 is reset to 0, and the 16-bit information I 1 ' stored at the beginning of the memory 8 is loaded into the counter 6. Next, solid-state image sensor 1
The counter 6 is decremented by the basic clock φ. The value of I 1 ' is preset to a value at which the counter 6 becomes 0 and the correction pulse T is output at the pulse position of the first defective point or a temporary defective point.
The analog switch 3 is switched under the control of the correction pulse T, and the output of the solid-state image sensor 1 is transferred to the delay circuit 2.
It is replaced with the data of the nearby point that passed through. If there is an actual defect, compensation for the defect is performed as shown in FIG. If it is a temporary defective point, the data is replaced in the same way, but since the temporary defective point is selected as a point within the horizontal retrace period B, it does not affect the display at all. When the correction pulse T is output, the address counter 5 is incremented by one, and the 16-bit information I 2 ' stored in the memory 8 is loaded into the counter 6. Repeat the above operation to reach counter 6.
is subtracted by φ, and when the content becomes 0, the next correction pulse T is output.

以上の説明から明らかなように本発明では固体
撮像素子の基本クロツクパルスのうち、表示が行
なわれない期間の適当な点を仮の欠陥点としてメ
モリに記憶させることにより欠陥点と欠陥点との
間に間隔を216未満等の所定の値未満にし、また
その間隔の値をメモリに記憶させて、その情報に
従つて欠陥補償を行なうことにより仮の欠陥点を
もうけない従来の方式と同等の補償効果を得るこ
とができる。本発明の方式を用いれば欠陥点の位
置情報が16ビツトで与えられるので、現在主流の
8ビツト構成のメモリを有効に利用することがで
きる。
As is clear from the above explanation, in the present invention, an appropriate point of the basic clock pulse of the solid-state image sensor during a period in which no display is performed is stored in the memory as a temporary defect point, thereby creating a gap between the defect points. This method is equivalent to the conventional method that does not create temporary defect points by setting the interval to less than a predetermined value such as less than 2 16 , storing the value of the interval in memory, and performing defect compensation according to that information. A compensatory effect can be obtained. If the method of the present invention is used, the position information of the defective point is given in 16 bits, so it is possible to effectively utilize the currently mainstream 8-bit memory.

<効 果> 以上本発明によれば、欠陥点の位置をメモリに
効率よく記憶させることができ、所定のビツト数
のメモリに位置情報を記憶させるに際し、所定の
ビツト数では表現出来ない欠陥を、仮の欠陥点を
設けることによつて所定のビツト数のメモリで記
憶させるようになしているため、結果として比較
的大画素数の固体撮像素子についても、欠陥の補
償回路を従来の方法に比して安価に構成でき、実
用価値の高い補償回路を得ることができる。
<Effects> According to the present invention, the position of a defective point can be efficiently stored in a memory, and when position information is stored in a memory with a predetermined number of bits, defects that cannot be expressed with a predetermined number of bits can be stored efficiently. By providing a temporary defect point, a predetermined number of bits is stored in the memory, and as a result, even for solid-state image sensors with a relatively large number of pixels, the defect compensation circuit cannot be constructed using the conventional method. Comparatively, it is possible to obtain a compensation circuit that can be constructed at low cost and has high practical value.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は従来装置のブロツク図、第2図は欠陥
補償動作を説明するための波形図、第3図はイン
タレース方式の走査を示す図、第4図及び第5図
は本発明の一実施例を説明するための画素走査と
欠陥画素との関係図、第6図は本発明による一実
施例のブロツク図である。 1:固定撮像素子、3:アナログスイツチ、
5:アドレスカウンタ、6:カウンタ、7:パル
ス発生器、8:メモリ。
FIG. 1 is a block diagram of the conventional device, FIG. 2 is a waveform diagram for explaining defect compensation operation, FIG. 3 is a diagram showing interlaced scanning, and FIGS. 4 and 5 are part of the present invention. FIG. 6 is a diagram showing the relationship between pixel scanning and defective pixels for explaining an embodiment. FIG. 6 is a block diagram of an embodiment according to the present invention. 1: Fixed image sensor, 3: Analog switch,
5: Address counter, 6: Counter, 7: Pulse generator, 8: Memory.

Claims (1)

【特許請求の範囲】 1 複数の撮像画素を配列してなる固体撮像素子
と、固体撮像素子の欠陥位置を示す位置情報を記
憶するメモリとを備え、上記メモリから読み出さ
れた位置情報に基いて上記固体撮像素子の欠陥画
素の信号を該欠陥画素と相関の高い他の画素の信
号で置き換える欠陥補償回路において、 所定のビツト数でメモリに記憶する位置情報は
隣接する欠陥の間隔によつて与えられ、該間隔が
上記所定のビツト数以上である欠陥位置は、上記
隣接する欠陥間に位置し、且つ画面に表示されな
い帰線期間内の点を予め設定して該点の位置を仮
の欠陥位置として、その位置を示す位置情報をメ
モリに記憶させてなる。 固体撮像素子の欠陥補償回路。 2 前記固体撮像素子は撮像画素数N(2i≦N<
2i+1)からなり、8m≦i<8(m+1)とすると
欠陥を記憶する前記メモリは一つの欠陥位置情報
を最大8mビツトで表現し記憶してなることを特
徴とする特許請求の範囲第1項記載の固体撮像素
子の欠陥補償回路。
[Scope of Claims] 1. A solid-state image sensor comprising a plurality of image sensors arranged in an array, and a memory for storing positional information indicating the defective position of the solid-state image sensor, and based on the positional information read from the memory. In the defect compensation circuit that replaces the signal of a defective pixel of the solid-state image sensor with the signal of another pixel having a high correlation with the defective pixel, the position information stored in the memory with a predetermined number of bits is determined by the interval between adjacent defects. The defect position where the interval is greater than or equal to the predetermined number of bits is determined by presetting a point within the retrace period that is located between the adjacent defects and not displayed on the screen, and temporarily changing the position of the point. Position information indicating the position of the defect is stored in the memory. Defect compensation circuit for solid-state image sensors. 2 The solid-state image sensor has an imaging pixel number N (2 i ≦N<
2 i+1 ), and if 8m≦i<8(m+1), the memory for storing defects is characterized in that the memory stores one defect position information expressed in a maximum of 8m bits. 2. A defect compensation circuit for a solid-state image sensor according to item 1.
JP58181706A 1983-09-27 1983-09-27 Defect compensating circuit of solid-state image pickup device Granted JPS6070879A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58181706A JPS6070879A (en) 1983-09-27 1983-09-27 Defect compensating circuit of solid-state image pickup device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58181706A JPS6070879A (en) 1983-09-27 1983-09-27 Defect compensating circuit of solid-state image pickup device

Publications (2)

Publication Number Publication Date
JPS6070879A JPS6070879A (en) 1985-04-22
JPH0129475B2 true JPH0129475B2 (en) 1989-06-12

Family

ID=16105429

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58181706A Granted JPS6070879A (en) 1983-09-27 1983-09-27 Defect compensating circuit of solid-state image pickup device

Country Status (1)

Country Link
JP (1) JPS6070879A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7301571B2 (en) 2003-01-17 2007-11-27 Fujifilm Corporation Method and imaging apparatus for correcting defective pixel of solid-state image sensor, and method for creating pixel information

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6034872B2 (en) * 1977-01-28 1985-08-10 ソニー株式会社 Noise removal circuit for solid-state imaging devices
JPS574862U (en) * 1980-06-10 1982-01-11

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7301571B2 (en) 2003-01-17 2007-11-27 Fujifilm Corporation Method and imaging apparatus for correcting defective pixel of solid-state image sensor, and method for creating pixel information
US7872680B2 (en) 2003-01-17 2011-01-18 Fujifilm Corporation Method and imaging apparatus for correcting defective pixel of solid-state image sensor, and method for creating pixel information

Also Published As

Publication number Publication date
JPS6070879A (en) 1985-04-22

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