JPH0137595B2 - - Google Patents
Info
- Publication number
- JPH0137595B2 JPH0137595B2 JP21204081A JP21204081A JPH0137595B2 JP H0137595 B2 JPH0137595 B2 JP H0137595B2 JP 21204081 A JP21204081 A JP 21204081A JP 21204081 A JP21204081 A JP 21204081A JP H0137595 B2 JPH0137595 B2 JP H0137595B2
- Authority
- JP
- Japan
- Prior art keywords
- pump
- vacuum
- chamber
- pump element
- evaporative
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F04—POSITIVE - DISPLACEMENT MACHINES FOR LIQUIDS; PUMPS FOR LIQUIDS OR ELASTIC FLUIDS
- F04B—POSITIVE-DISPLACEMENT MACHINES FOR LIQUIDS; PUMPS
- F04B37/00—Pumps having pertinent characteristics not provided for in, or of interest apart from, groups F04B25/00 - F04B35/00
- F04B37/10—Pumps having pertinent characteristics not provided for in, or of interest apart from, groups F04B25/00 - F04B35/00 for special use
- F04B37/14—Pumps having pertinent characteristics not provided for in, or of interest apart from, groups F04B25/00 - F04B35/00 for special use to obtain high vacuum
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Compressors, Vaccum Pumps And Other Relevant Systems (AREA)
- Electron Tubes For Measurement (AREA)
Description
【発明の詳細な説明】
この発明は、非蒸発型ゲツタポンプ素子とスパ
ツタイオンポンプ素子を１個の真空ポンプ室内に
組込み、相乗作用によつて超高真空を得るように
した超高真空ポンプに関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to an ultra-high vacuum pump that incorporates a non-evaporative getter pump element and a sputter ion pump element into one vacuum pump chamber, and obtains an ultra-high vacuum through synergistic action. It is something.
ペニング放電を利用したスパツタイオンポンプ
は従来より公知のもので、超高真空やきれいな真
空を作るための真空ポンプとして使用されてい
る。通常のスパツタイオンポンプはネオン、アル
ゴンなどの稀ガスに対する排気速度が小さく、特
に多量のアルゴンガスを排気する際にはいわゆる
アルゴンガス不安定性と呼ばれる現象を起し、圧
力の周期的な変動を生じる欠点がある。そのため
に不活性ガスの排気を強化したいわゆるノーブル
ポンプ又は不活性ガス排気強化ポンプが使用され
ている。 Spatti ion pumps that utilize Penning discharge have been known for some time, and are used as vacuum pumps to create ultra-high vacuums and clean vacuums. Ordinary spatted ion pumps have a low pumping speed for rare gases such as neon and argon, and when pumping out a large amount of argon gas, a phenomenon called argon gas instability occurs, causing periodic fluctuations in pressure. There are drawbacks that arise. For this purpose, a so-called noble pump or an enhanced inert gas exhaust pump with enhanced inert gas exhaust is used.
又一方では、非常に活性なZr―Al合金が金属
のストリツプの両面にそれぞれ例えば50μの厚
さ、重量にして約17mg／cm2にコートされ、このコ
ートされたZr―Al合金が活性非蒸発ゲツタとし
て働く非蒸発型ゲツタポンプが真空ポンプとして
利用されていることも従来より知られている。し
かしこのポンプは蒸発型ゲツタポンプと同様に活
性ガスに対しては大きな排気速度をもつている
が、不活性ガスを排気することは困難である欠点
をもつている。 On the other hand, a highly active Zr-Al alloy is coated on each side of a metal strip to a thickness of, for example, 50 μm and a weight of about 17 mg/cm 2 , and this coated Zr-Al alloy has an active non-evaporating effect. It has also been known that non-evaporative getter pumps that function as getters are used as vacuum pumps. However, although this pump, like the evaporative getter pump, has a high pumping speed for active gas, it has the disadvantage that it is difficult to pump inert gas.
そして、これらのポンプは、配管系を介して単
独又は並列に排気すべき真空槽に接続されて使用
されるのが従来の手段であつた。 Conventionally, these pumps are used by being connected to a vacuum chamber to be evacuated either singly or in parallel via a piping system.
本願の発明は、非蒸発型ゲツタポンプ素子とス
パツタイオンポンプ素子特にノーブル型スパツタ
イオンポンプ素子を真空排気すべき真空槽とゲー
ト弁で連通する該ゲート弁と溶接一体化された真
空ポンプ室内に組込み、相乗作用を呈するように
配置し、上述した欠点を除去しようとするもので
ある。 The invention of the present application provides a vacuum pump chamber in which a non-evaporative getter pump element and a sputter ion pump element, particularly a noble type sputter ion pump element, are connected by a gate valve to a vacuum chamber to be evacuated, and which are integrated by welding with the gate valve. Incorporating and arranging them in a synergistic manner seeks to eliminate the drawbacks mentioned above.
すなわち、スパツタイオンポンプは超高真空に
なると水素やCOなどの排気速度が減少し、非蒸
発型ゲツタポンプは不活性ガスの排気ができない
というお互いの欠点を補償し合うことのできる超
高真空排気ポンプを提供することができる。 In other words, ultra-high vacuum pumping can compensate for the shortcomings of the Spatsuta ion pump, which reduces the pumping speed of hydrogen, CO, etc. at ultra-high vacuum, and the inability of the non-evaporative getta pump to pump inert gases. Pumps can be provided.
又弁機構を槽と一体熔接して付加してあるの
で、排気すべき真空槽内を大気圧にした場合でも
ポンプ素子を設けた真空ポンプ室内を真空に保つ
ことができるので、ポンプの性能を保持しかつ寿
命を伸ばすことができる。このことは特に非蒸発
型ゲツタポンプ素子の寿命を長くすることに重要
である。その理由は非蒸発型ゲツタポンプ素子は
大気にさらされると、常温の下でもゲツタ材の表
面層が活性ガスの吸収（すなわち排気）を起しそ
のため寿命が著しく減少するからである。 In addition, since the valve mechanism is integrally welded to the tank, even if the vacuum chamber to be evacuated is brought to atmospheric pressure, the vacuum pump chamber containing the pump element can be maintained at a vacuum, improving pump performance. can be retained and extend its lifespan. This is particularly important for extending the life of non-evaporative getter pump elements. The reason for this is that when a non-evaporative getter pump element is exposed to the atmosphere, the surface layer of the getter material absorbs (i.e. exhausts) active gas even at room temperature, which significantly shortens its life.
さらに、非蒸発型ゲツタポンプ素子は蒸発型ゲ
ツタポンプと異なり周囲に壁を設ける必要がない
ため、非蒸発型ゲツタポンプ素子とスパツタイオ
ンポンプ素子をすぐ近くで同一室内に設けて適切
な配置にすることによつて、スパツタイオンポン
プ素子の放電区域内で励起活性化されたガス分子
が非蒸発型ゲツタポンプ素子に衝突しやすくな
り、排気能力はさらに高められるという相乗効果
をもつた超高真空排気ポンプが得られる。 Furthermore, unlike evaporative getter pumps, non-evaporative getter pump elements do not require walls around them, so it is possible to arrange them appropriately by placing them in the same room close together. Therefore, the gas molecules excited and activated within the discharge area of the sputter ion pump element are more likely to collide with the non-evaporative getter pump element, thereby further increasing the pumping capacity. can get.
以下図面について本願発明の実施例について説
明する。 Embodiments of the present invention will be described below with reference to the drawings.
第１図Ａ，Ｂ，Ｃ，Ｄは従来の使用型式を示す
略図であつて、Ａは排気すべき真空槽１に管２を
介してスパツタイオンポンプ３を接続した状態を
示し、Ｂは排気すべき真空槽１に管２を介してス
パツタイオンポンプ３を接続すると共にこれに並
列に管４を介して非蒸発型ゲツタポンプ５を接続
した状態を示し、Ｃ，ＤはＡ，Ｂにおける管２，
４にそれぞれ弁６，７を設け、装置の一部取替え
などに便利にした状態を示す。 1A, B, C, and D are schematic diagrams showing conventional usage types, where A shows a state in which a sputter ion pump 3 is connected to a vacuum chamber 1 to be evacuated via a pipe 2, and B shows a state in which a sputtering ion pump 3 is connected to a vacuum chamber 1 to be evacuated. A sputter ion pump 3 is connected to the vacuum chamber 1 to be evacuated via a pipe 2, and a non-evaporative getter pump 5 is connected in parallel to this via a pipe 4. tube 2,
4 is provided with valves 6 and 7, respectively, to facilitate partial replacement of the device.
第２図Ａ，Ｂは本願発明の実施例を示すもの
で、Ａは排気すべき真空槽７に取付けられるよう
にしたゲイト弁８を真空ポンプ室９に一体に溶着
形成し、真空ポンプ室９内に中央に非蒸発型ゲツ
タポンプ素子１０を配設し、その加熱用の導電線
１１，１１′を真空ポンプ室９の外方に導き、前
記ポンプ室９の非蒸発型ゲツタポンプ素子１０を
取巻く位置に４個の凹所１２を設けその内部にス
パツタイオンポンプ素子１３を内蔵させる。その
際各スパツタイオンポンプ素子に付属するＮ、Ｓ
の磁極はポンプ室９の外方に設ける。 FIGS. 2A and 2B show an embodiment of the present invention. In A, a gate valve 8 which is attached to a vacuum chamber 7 to be evacuated is integrally welded to a vacuum pump chamber 9. A non-evaporative getter pump element 10 is disposed in the center of the vacuum pump chamber 9, and conductive wires 11, 11' for heating thereof are guided to the outside of the vacuum pump chamber 9, and a position surrounding the non-evaporative getter pump element 10 in the pump chamber 9 is provided. Four recesses 12 are provided in the recesses, and a sputter ion pump element 13 is housed therein. At that time, the N and S parts attached to each spout tie ion pump element.
The magnetic pole is provided outside the pump chamber 9.
Ｂは他の実施例でスパツタイオンポンプ素子１
３がバルクゲツタポンプ素子１０の周囲に１個だ
け設けられた状態を示している。 B is another embodiment of the sputter ion pump element 1.
3 shows a state in which only one getter pump element 10 is provided around the bulk getter pump element 10.
本願発明のものでは、非蒸発型ゲツタポンプ素
子の動作温度は400℃程度でも良いし、超高真空
領域では室温動作でも良い。超高真空での主残留
ガス成分はH2であり、非蒸発型ゲツタポンプ素
子は室温でもH2の排気速度は余り変らず400℃の
ときの約80％程度である。 In the present invention, the operating temperature of the non-evaporative getter pump element may be approximately 400° C., or may be operated at room temperature in the ultra-high vacuum region. The main residual gas component in ultra-high vacuum is H 2 , and the pumping speed of H 2 in non-evaporative getter pump elements does not change much even at room temperature, and is approximately 80% of that at 400°C.
なお第２図Ｂ中の１４は補助バルブであつて、
ポンプ室９を予め真空にするために使用するもの
である。 Note that 14 in FIG. 2B is an auxiliary valve,
This is used to evacuate the pump chamber 9 in advance.
第１図は従来のポンプ配置の説明図であつて、
Ａは真空槽にスパツタイオンポンプを単独に接続
した図、Ｂは真空槽にスパツタイオンポンプと非
蒸発型ゲツタポンプを並列に接続した図、Ｃ，Ｄ
はＡ，Ｂの各接続管に弁を配置した図、第２図は
本願発明の実施例を示す図であつて、Ａは非蒸発
型ゲツタポンプ素子の周囲に４個のスパツタイオ
ンポンプ素子を設けたもの、Ｂは１個のスパツタ
イオンポンプ素子を設けたものを示す。
図中、１……真空槽、２，４……配管、３……
スパツタイオンポンプ、５……非蒸発型ゲツタポ
ンプ、６，７……弁、７……排気すべき真空槽、
８……ゲート弁、９……真空ポンプ室、１０……
非蒸発型ゲツタポンプ素子、１１，１１′……導
線、１２……凹部、１３……スパツタイオンポン
プ素子、１４……弁。
FIG. 1 is an explanatory diagram of a conventional pump arrangement.
A is a diagram in which a sputter ion pump is connected individually to a vacuum chamber, B is a diagram in which a sputter ion pump and a non-evaporative Getta pump are connected in parallel to a vacuum chamber, C, D
2 shows an embodiment of the present invention, in which A shows four sputter ion pump elements arranged around a non-evaporative getter pump element. B indicates one equipped with one sputter ion pump element. In the figure, 1... vacuum chamber, 2, 4... piping, 3...
Spattuta ion pump, 5...Non-evaporation type Getta pump, 6, 7...Valve, 7...Vacuum chamber to be evacuated,
8...Gate valve, 9...Vacuum pump chamber, 10...
Non-evaporative getter pump element, 11, 11'...conducting wire, 12...recess, 13...sputter ion pump element, 14...valve.
Claims (1)
ート弁を一体に溶接した１個の真空ポンプ室内
に、該真空ポンプ室の中央に配設した非蒸発型ゲ
ツタポンプ素子と、前記真空ポンプ室の側壁の前
記非蒸発型ゲツタポンプ素子を取巻く位置に設け
た少なくとも１つの凹所内に、前記非蒸発型ゲツ
タポンプ素子にスパツタイオンポンプ素子の放電
区域で励起活性化したガス分子が衝突するよう配
設したスパツタイオンポンプ素子とを具備するこ
とを特徴とする非蒸発型ゲツタポンプとスパツタ
イオンポンプを組合わせた超高真空ポンプ。1. A non-evaporative getter pump element disposed in the center of the vacuum pump chamber, and a side wall of the vacuum pump chamber, in a single vacuum pump chamber in which a gate valve, one of which is attached to the vacuum chamber to be evacuated, is welded together. a sputter disposed in at least one recess provided in a position surrounding the non-evaporative getter pump element so that gas molecules excited and activated in the discharge area of the sputter ion pump element collide with the non-evaporative getter pump element. An ultra-high vacuum pump that is a combination of a non-evaporative Getsuta pump and a Spatuta ion pump, characterized by being equipped with a Tsutai ion pump element.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21204081A JPS58117371A (en) | 1981-12-30 | 1981-12-30 | Superhigh vacuum pump using bulk getter pump and sputtered ion pump in combination |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21204081A JPS58117371A (en) | 1981-12-30 | 1981-12-30 | Superhigh vacuum pump using bulk getter pump and sputtered ion pump in combination |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58117371A JPS58117371A (en) | 1983-07-12 |
| JPH0137595B2 true JPH0137595B2 (en) | 1989-08-08 |
Family
ID=16615868
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP21204081A Granted JPS58117371A (en) | 1981-12-30 | 1981-12-30 | Superhigh vacuum pump using bulk getter pump and sputtered ion pump in combination |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58117371A (en) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6361618B1 (en) | 1994-07-20 | 2002-03-26 | Applied Materials, Inc. | Methods and apparatus for forming and maintaining high vacuum environments |
| US6077404A (en) * | 1998-02-17 | 2000-06-20 | Applied Material, Inc. | Reflow chamber and process |
| CN101978463B (en) | 2008-03-28 | 2013-02-13 | 工程吸气公司 | Combined pumping system comprising a getter pump and an ion pump |
| ITMI20090402A1 (en) | 2009-03-17 | 2010-09-18 | Getters Spa | COMBINED PUMPING SYSTEM INCLUDING A GETTER PUMP AND A ION PUMP |
-
1981
- 1981-12-30 JP JP21204081A patent/JPS58117371A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58117371A (en) | 1983-07-12 |
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