JPH0146980B2 - - Google Patents
Info
- Publication number
- JPH0146980B2 JPH0146980B2 JP13979880A JP13979880A JPH0146980B2 JP H0146980 B2 JPH0146980 B2 JP H0146980B2 JP 13979880 A JP13979880 A JP 13979880A JP 13979880 A JP13979880 A JP 13979880A JP H0146980 B2 JPH0146980 B2 JP H0146980B2
- Authority
- JP
- Japan
- Prior art keywords
- water
- soluble
- photoresist
- diazo
- compound
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229920002120 photoresistant polymer Polymers 0.000 claims description 46
- 239000004372 Polyvinyl alcohol Substances 0.000 claims description 26
- 229920002451 polyvinyl alcohol Polymers 0.000 claims description 26
- 229920000036 polyvinylpyrrolidone Polymers 0.000 claims description 21
- 239000001267 polyvinylpyrrolidone Substances 0.000 claims description 21
- 235000013855 polyvinylpyrrolidone Nutrition 0.000 claims description 21
- 150000001875 compounds Chemical class 0.000 claims description 14
- 125000000664 diazo group Chemical group [N-]=[N+]=[*] 0.000 claims description 14
- 238000000576 coating method Methods 0.000 claims description 13
- 239000011248 coating agent Substances 0.000 claims description 12
- 239000011358 absorbing material Substances 0.000 claims description 11
- 239000002861 polymer material Substances 0.000 claims description 11
- 229920003169 water-soluble polymer Polymers 0.000 claims description 11
- 238000000034 method Methods 0.000 claims description 10
- 239000000203 mixture Substances 0.000 claims description 10
- 150000008049 diazo compounds Chemical class 0.000 claims description 9
- 238000013329 compounding Methods 0.000 claims description 2
- 230000035945 sensitivity Effects 0.000 description 20
- 150000001540 azides Chemical class 0.000 description 7
- 238000010586 diagram Methods 0.000 description 5
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 4
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 description 4
- 206010034972 Photosensitivity reaction Diseases 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 4
- 230000001070 adhesive effect Effects 0.000 description 4
- 239000003431 cross linking reagent Substances 0.000 description 4
- 230000036211 photosensitivity Effects 0.000 description 4
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- JHWIEAWILPSRMU-UHFFFAOYSA-N 2-methyl-3-pyrimidin-4-ylpropanoic acid Chemical compound OC(=O)C(C)CC1=CC=NC=N1 JHWIEAWILPSRMU-UHFFFAOYSA-N 0.000 description 2
- HRPVXLWXLXDGHG-UHFFFAOYSA-N Acrylamide Chemical compound NC(=O)C=C HRPVXLWXLXDGHG-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- JOSWYUNQBRPBDN-UHFFFAOYSA-P ammonium dichromate Chemical compound [NH4+].[NH4+].[O-][Cr](=O)(=O)O[Cr]([O-])(=O)=O JOSWYUNQBRPBDN-UHFFFAOYSA-P 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000018109 developmental process Effects 0.000 description 2
- 150000001989 diazonium salts Chemical class 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 230000007261 regionalization Effects 0.000 description 2
- 150000003839 salts Chemical class 0.000 description 2
- QDWYPRSFEZRKDK-UHFFFAOYSA-M sodium;sulfamate Chemical class [Na+].NS([O-])(=O)=O QDWYPRSFEZRKDK-UHFFFAOYSA-M 0.000 description 2
- 229920001059 synthetic polymer Polymers 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- JRBJSXQPQWSCCF-UHFFFAOYSA-N 3,3'-Dimethoxybenzidine Chemical compound C1=C(N)C(OC)=CC(C=2C=C(OC)C(N)=CC=2)=C1 JRBJSXQPQWSCCF-UHFFFAOYSA-N 0.000 description 1
- VLZIZQRHZJOXDM-UHFFFAOYSA-N 4-(4-amino-3-ethylphenyl)-2-ethylaniline Chemical compound C1=C(N)C(CC)=CC(C=2C=C(CC)C(N)=CC=2)=C1 VLZIZQRHZJOXDM-UHFFFAOYSA-N 0.000 description 1
- ZRDSGWXWQNSQAN-UHFFFAOYSA-N 6-diazo-n-phenylcyclohexa-2,4-dien-1-amine Chemical compound [N-]=[N+]=C1C=CC=CC1NC1=CC=CC=C1 ZRDSGWXWQNSQAN-UHFFFAOYSA-N 0.000 description 1
- NLHHRLWOUZZQLW-UHFFFAOYSA-N Acrylonitrile Chemical compound C=CC#N NLHHRLWOUZZQLW-UHFFFAOYSA-N 0.000 description 1
- IVRMZWNICZWHMI-UHFFFAOYSA-N Azide Chemical class [N-]=[N+]=[N-] IVRMZWNICZWHMI-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229920002134 Carboxymethyl cellulose Polymers 0.000 description 1
- FBPFZTCFMRRESA-FSIIMWSLSA-N D-Glucitol Natural products OC[C@H](O)[C@H](O)[C@@H](O)[C@H](O)CO FBPFZTCFMRRESA-FSIIMWSLSA-N 0.000 description 1
- FBPFZTCFMRRESA-JGWLITMVSA-N D-glucitol Chemical compound OC[C@H](O)[C@@H](O)[C@H](O)[C@H](O)CO FBPFZTCFMRRESA-JGWLITMVSA-N 0.000 description 1
- IMROMDMJAWUWLK-UHFFFAOYSA-N Ethenol Chemical compound OC=C IMROMDMJAWUWLK-UHFFFAOYSA-N 0.000 description 1
- 108010010803 Gelatin Proteins 0.000 description 1
- 229920000084 Gum arabic Polymers 0.000 description 1
- 229920002153 Hydroxypropyl cellulose Polymers 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- CERQOIWHTDAKMF-UHFFFAOYSA-M Methacrylate Chemical compound CC(=C)C([O-])=O CERQOIWHTDAKMF-UHFFFAOYSA-M 0.000 description 1
- 229910019142 PO4 Inorganic materials 0.000 description 1
- 229920003171 Poly (ethylene oxide) Polymers 0.000 description 1
- 239000002202 Polyethylene glycol Substances 0.000 description 1
- OFOBLEOULBTSOW-UHFFFAOYSA-N Propanedioic acid Natural products OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 1
- 241000978776 Senegalia senegal Species 0.000 description 1
- 229920002125 Sokalan® Polymers 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-L Sulfate Chemical compound [O-]S([O-])(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-L 0.000 description 1
- LZAPTTHWIYBHMH-UHFFFAOYSA-N [[4-[2-(2-carboxy-4-diazonioiminocyclohexa-2,5-dien-1-ylidene)ethylidene]cyclohexa-2,5-dien-1-ylidene]hydrazinylidene]azanide Chemical compound OC(=O)C1=CC(=N[N+]#N)C=CC1=CC=C1C=CC(=NN=[N-])C=C1 LZAPTTHWIYBHMH-UHFFFAOYSA-N 0.000 description 1
- XHPWRTXYJFNZAW-UHFFFAOYSA-N [[4-[2-(4-diazonioimino-2-sulfocyclohexa-2,5-dien-1-ylidene)ethylidene]-3-sulfocyclohexa-2,5-dien-1-ylidene]hydrazinylidene]azanide Chemical compound OS(=O)(=O)C1=CC(N=[N+]=[N-])=CC=C1C=CC1=CC=C(N=[N+]=[N-])C=C1S(O)(=O)=O XHPWRTXYJFNZAW-UHFFFAOYSA-N 0.000 description 1
- 239000000205 acacia gum Substances 0.000 description 1
- 235000010489 acacia gum Nutrition 0.000 description 1
- DHKHKXVYLBGOIT-UHFFFAOYSA-N acetaldehyde Diethyl Acetal Natural products CCOC(C)OCC DHKHKXVYLBGOIT-UHFFFAOYSA-N 0.000 description 1
- 125000002777 acetyl group Chemical class [H]C([H])([H])C(*)=O 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 238000005269 aluminizing Methods 0.000 description 1
- 230000003254 anti-foaming effect Effects 0.000 description 1
- HFACYLZERDEVSX-UHFFFAOYSA-N benzidine Chemical compound C1=CC(N)=CC=C1C1=CC=C(N)C=C1 HFACYLZERDEVSX-UHFFFAOYSA-N 0.000 description 1
- 239000003738 black carbon Substances 0.000 description 1
- 239000001768 carboxy methyl cellulose Substances 0.000 description 1
- 235000010948 carboxy methyl cellulose Nutrition 0.000 description 1
- 239000008112 carboxymethyl-cellulose Substances 0.000 description 1
- 239000005018 casein Substances 0.000 description 1
- BECPQYXYKAMYBN-UHFFFAOYSA-N casein, tech. Chemical compound NCCCCC(C(O)=O)N=C(O)C(CC(O)=O)N=C(O)C(CCC(O)=N)N=C(O)C(CC(C)C)N=C(O)C(CCC(O)=O)N=C(O)C(CC(O)=O)N=C(O)C(CCC(O)=O)N=C(O)C(C(C)O)N=C(O)C(CCC(O)=N)N=C(O)C(CCC(O)=N)N=C(O)C(CCC(O)=N)N=C(O)C(CCC(O)=O)N=C(O)C(CCC(O)=O)N=C(O)C(COP(O)(O)=O)N=C(O)C(CCC(O)=N)N=C(O)C(N)CC1=CC=CC=C1 BECPQYXYKAMYBN-UHFFFAOYSA-N 0.000 description 1
- 235000021240 caseins Nutrition 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- -1 diazodiphenylamine (phosphate) Chemical compound 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 239000008273 gelatin Substances 0.000 description 1
- 229920000159 gelatin Polymers 0.000 description 1
- 235000019322 gelatine Nutrition 0.000 description 1
- 235000011852 gelatine desserts Nutrition 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 235000011187 glycerol Nutrition 0.000 description 1
- VOZRXNHHFUQHIL-UHFFFAOYSA-N glycidyl methacrylate Chemical compound CC(=C)C(=O)OCC1CO1 VOZRXNHHFUQHIL-UHFFFAOYSA-N 0.000 description 1
- 229920000578 graft copolymer Polymers 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 229920003063 hydroxymethyl cellulose Polymers 0.000 description 1
- 229940031574 hydroxymethyl cellulose Drugs 0.000 description 1
- 239000001863 hydroxypropyl cellulose Substances 0.000 description 1
- 235000010977 hydroxypropyl cellulose Nutrition 0.000 description 1
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 description 1
- 239000011976 maleic acid Substances 0.000 description 1
- XJRBAMWJDBPFIM-UHFFFAOYSA-N methyl vinyl ether Chemical compound COC=C XJRBAMWJDBPFIM-UHFFFAOYSA-N 0.000 description 1
- OMNKZBIFPJNNIO-UHFFFAOYSA-N n-(2-methyl-4-oxopentan-2-yl)prop-2-enamide Chemical compound CC(=O)CC(C)(C)NC(=O)C=C OMNKZBIFPJNNIO-UHFFFAOYSA-N 0.000 description 1
- 229920005615 natural polymer Polymers 0.000 description 1
- NBIIXXVUZAFLBC-UHFFFAOYSA-K phosphate Chemical compound [O-]P([O-])([O-])=O NBIIXXVUZAFLBC-UHFFFAOYSA-K 0.000 description 1
- 239000010452 phosphate Substances 0.000 description 1
- 229920002432 poly(vinyl methyl ether) polymer Polymers 0.000 description 1
- 229920002401 polyacrylamide Polymers 0.000 description 1
- 239000004584 polyacrylic acid Substances 0.000 description 1
- 229920001223 polyethylene glycol Polymers 0.000 description 1
- 229920002643 polyglutamic acid Polymers 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- GCLGEJMYGQKIIW-UHFFFAOYSA-H sodium hexametaphosphate Chemical compound [Na]OP1(=O)OP(=O)(O[Na])OP(=O)(O[Na])OP(=O)(O[Na])OP(=O)(O[Na])OP(=O)(O[Na])O1 GCLGEJMYGQKIIW-UHFFFAOYSA-H 0.000 description 1
- 235000019982 sodium hexametaphosphate Nutrition 0.000 description 1
- RPACBEVZENYWOL-XFULWGLBSA-M sodium;(2r)-2-[6-(4-chlorophenoxy)hexyl]oxirane-2-carboxylate Chemical compound [Na+].C=1C=C(Cl)C=CC=1OCCCCCC[C@]1(C(=O)[O-])CO1 RPACBEVZENYWOL-XFULWGLBSA-M 0.000 description 1
- 239000000600 sorbitol Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 230000002195 synergetic effect Effects 0.000 description 1
- 239000001577 tetrasodium phosphonato phosphate Substances 0.000 description 1
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
- H01J29/02—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
- H01J29/10—Screens on or from which an image or pattern is formed, picked up, converted or stored
- H01J29/18—Luminescent screens
- H01J29/22—Luminescent screens characterised by the binder or adhesive for securing the luminescent material to its support, e.g. vessel
- H01J29/225—Luminescent screens characterised by the binder or adhesive for securing the luminescent material to its support, e.g. vessel photosensitive adhesive
Landscapes
- Formation Of Various Coating Films On Cathode Ray Tubes And Lamps (AREA)
Description
本発明はパターン形成方法に係り、特にブラツ
クストライプ型カラー受像管の非発光性光吸収物
質被膜のパターン形成方法に関するものである。
例えばカラー受像管のブラツクストライプのパ
ターン形成時にはフオトレジストが使用され、こ
のフオトレジストの特性としては水溶性であるこ
と、高感度であること、暗反応及び熱かぶりのな
いこと、付着力が強いこと、また現像性の良いこ
と、光により硬化したフオトレジストの剥離が容
易であることなど多くの特性を満足させなければ
ならない。
従来より、カラー受像管の非発光性光吸収物質
被膜の形成に用いられるフオトレジストとして
は、ポリビニルアルコール(PVA)と重クロム
酸アンモニウム(ADC)または重クロム酸ナト
リウム(SDC)よりなるフオトレジスト所謂
PVA−ADC系フオトレジストやPVAと水溶性ジ
アゾニウム化合物(DIAZO)よりなるフオトレ
ジスト所謂PVA−ジアゾ系フオトレジスト、ま
たはポリビニルピロリドン(PVP)と水溶性ビ
スアジド化合物(AZIDE)よりなるフオトレジ
スト所謂PVP−アジド系フオトレジストなどが
知られている。
しかし、これらの従来から知られているフオト
レジストにおいては、それぞれ一長一短があり、
カラー受像管螢光面の非発光性光吸収物質被膜の
形成時において前述した特性を全て満たしたフオ
トレジストでないのが現状である。
例えばPVA−ADC系フオトレジストは高感度
であるが、その反面露光量に対する感度の変化、
所謂γが立つているため、非発光性光吸収物質被
膜のホールのサイズのコントロールにおいて難点
があり、しかも暗反応及び熱かぶりを生じること
もあり作業幅が狭く細かな管理が必要である。
またPVA−ジアゾ系フオトレジストは付着力
は強いが、その反面、現像性が非常に悪く、また
感度が低く実用性はとぼしい。
更にPVP−アジド系フオトレジストは、現像
性がよい反面、付着性がなく、また一定以上の強
い光でなければ充分なパターン形成が行なわれな
い所謂相反則不軌特性を有しているためパターン
の焼き付けに際して限界を生じている。
次にカラー受像管螢光面の非発光性光吸収物質
被膜の形成方法についてそのパターン形成方法及
びフオトレジストに要求される特性、従来のフオ
トレジストの特性などを説明する。
先ず、カラー受像管螢光面の非発光性光吸収物
質被膜は次の工程により形成される。
(1) レジストコート:フエースパネル内面にフオ
トレジストを塗布、乾燥しフオトレジスト被膜
を形成する。
(2) 露光:シヤドウマスクを装着し、このシヤド
ウマスクの電子ビーム通過孔部を介してR,
G,B3原色螢光体層用のホールを形成する位
置に光を照射する。
(3) 現像:シヤドウマスクをはずし、水で現像し
て硬化したフオトレジストのドツトを残し、他
の部分を洗い流す。
(4) 非発光性光吸収物質膜の形成:フエースガラ
スの内面にコロイド状黒色カーボン懸濁液を塗
布し、乾燥する。
(5) 剥離:剥離液をそそぎ硬化したフオトレジス
トを除去し、非発光性光吸収物質膜にホールを
形成する。
(6) 以降の3色螢光体層の形成、アルミナイジン
グ、フリツトベーキング電子銃装置などの工程
は従来とほぼ同じである。
このような工程において、非発光性光吸収物質
膜に形成されたホールに対しては次の品位が要求
される。
(1) シヤープなホールエツジのきれ
(2) 全体のむらが極めて少ないこと
これらに加えて、上記品位を安定して生産する
ためにフオトレジストに要求される特性は次の通
りである。
(3) 塗布膜の付着力:これが弱いと現像して硬化
膜が脱落する欠点が発生し、極端な場合にはホ
ールが形成されない。
(4) 感度:低感度であると長い露光時間が必要に
なり作業性が悪い。
これに対して従来のフオトレジストは第1表の
様にこれら特性を全て満たすフオトレジストは得
られていない。
The present invention relates to a pattern forming method, and more particularly to a pattern forming method for a non-luminescent light absorbing material coating of a black stripe type color picture tube. For example, a photoresist is used to form the black stripe pattern of a color picture tube, and the characteristics of this photoresist are that it is water-soluble, has high sensitivity, has no dark reaction or heat fog, and has strong adhesion. In addition, it must satisfy many characteristics such as good developability and easy peeling of a photoresist cured by light. Conventionally, so-called photoresists made of polyvinyl alcohol (PVA) and ammonium dichromate (ADC) or sodium dichromate (SDC) have been used to form a non-luminescent light-absorbing material coating for color picture tubes.
PVA-ADC photoresist, a photoresist consisting of PVA and a water-soluble diazonium compound (DIAZO), so-called PVA-diazo photoresist, or a photoresist consisting of polyvinylpyrrolidone (PVP) and a water-soluble bisazide compound (AZIDE), so-called PVP-azide. Photoresists and the like are known. However, each of these conventionally known photoresists has advantages and disadvantages.
At present, there is no photoresist that satisfies all of the above-mentioned properties when forming a non-luminescent light-absorbing material coating on the fluorescent surface of a color picture tube. For example, PVA-ADC photoresists have high sensitivity, but on the other hand, the sensitivity changes depending on the exposure amount.
Because of the so-called γ, it is difficult to control the size of the holes in the non-luminescent light-absorbing material coating, and furthermore, dark reactions and heat fogging may occur, so the working range is narrow and detailed management is required. PVA-diazo photoresists have strong adhesion, but on the other hand, they have very poor developability and low sensitivity, making them of little practical use. Furthermore, although PVP-azide photoresists have good developability, they do not have adhesion properties, and they also have so-called reciprocity failure characteristics, meaning that sufficient pattern formation cannot be achieved unless the light is strong above a certain level. There are limitations when it comes to baking. Next, a method for forming a pattern of a non-luminescent light-absorbing substance coating on the fluorescent surface of a color picture tube, characteristics required of a photoresist, characteristics of conventional photoresists, etc. will be explained. First, a non-luminescent light-absorbing material coating on the fluorescent surface of the color picture tube is formed by the following process. (1) Resist coat: Apply photoresist to the inner surface of the face panel and dry to form a photoresist film. (2) Exposure: Attach a shadow mask and expose R,
Light is irradiated to the positions where holes for the G and B3 primary color phosphor layers are to be formed. (3) Development: Remove the shadow mask and develop with water, leaving the hardened photoresist dots and washing away the other areas. (4) Formation of non-luminescent light-absorbing material film: Coat a colloidal black carbon suspension on the inner surface of the face glass and dry. (5) Peeling: Pour a stripping solution to remove the hardened photoresist and form holes in the non-luminescent light absorbing material film. (6) The subsequent steps such as formation of the three-color phosphor layer, aluminizing, and frit baking electron gun device are almost the same as conventional ones. In such a process, the following quality is required for the holes formed in the non-luminescent light absorbing material film. (1) Sharp hole edges (2) Very little overall unevenness In addition to these, the following properties are required of photoresists in order to stably produce the above-mentioned quality. (3) Adhesion of the coating film: If this is weak, the cured film will fall off during development, and in extreme cases, holes will not be formed. (4) Sensitivity: If the sensitivity is low, a long exposure time is required, resulting in poor workability. On the other hand, as shown in Table 1, conventional photoresists that satisfy all of these characteristics have not been obtained.
【表】
本発明は前記従来の諸問題点に鑑みなされたも
のであり、特にフエースパネル内面に非発光性光
吸収物質被膜を有するカラー受像管螢光面などの
パターン形成に使用されるフオトレジスト特性を
充分に満足し、高感度で広い作業幅が得られる新
規なホトレジストを使用したパターンの形成方法
を提供することを目的としている。
発明者は前述の諸問題点のない水溶性フオトレ
ジストを種々検討した結果、水溶性高分子に架橋
剤として水溶性ビスアジド化合物と、水溶性ジア
ゾ化合物とを併用した場合、アジド系フオトレジ
ストの欠点である付着力とジアゾ系フオトレジス
トの欠点である感光性と感光液の熱安定性が改善
されるばかりでなく、驚くべきことに、これらの
架橋剤を併用した場合に加橋剤の相乗効果によ
り、架橋剤を単独で使用した場合には得られない
極めて高い感度が得られることが判つた。即ち、
本発明に係るフオトレジストは
(1) 水溶性ビスアジド化合物と、水溶性ジアゾ化
合物および水溶性高分子材料からなることを特
徴とするフオトレジスト。
(2) 水溶性高分子材料がポリビニルピロリドンと
ポリビニルアルコールの配合物であり、ポリビ
ニルピロリドンのポリビニルアルコールに対す
る配合割り合いが重量比で0.5〜3.0の範囲であ
り、かつ水溶性ビスアジド化合物の水溶性ジア
ゾ化合物に対する割り合いが重量比で3.0〜7.0
の範囲であることを特徴とするものである。
次に本発明に係るフオトレジストによるパター
ン形成方法を詳細に説明する。
先ず本発明に使用される水溶性ビスアジド化合
物としては、例えば
4,4′−ジアジドスチルベン2,2′−ジスルフ
オン酸、
4,4′−ジアジドベンザルアセトフエノン−2
−スルフオン酸、
4,4′−ジアジドスチルベン−2−カルボン
酸、
およびこれらの塩などである。
また水溶性ジアゾ化合物としては、例えば
ベンジジンテトラゾニウムクロライド
3,3′−ジメチルベンジンのテトラゾニウムク
ロライド、
3,3′−ジメトキシベンジジンのテトラゾニウ
ムクロライド、
4,4′−ジアミノジフエルアミンのテトラゾニ
ウムクロライド、
3,3′−ジエチルベンジジンのテトラゾニウム
硫酸塩、
ジアゾジフエニルアミンのホルマリン縮合物
およびこれらの複塩である。
次に水溶性高分子材料の例としては、例えばポ
リビニルアルコール、ポリビニルピロリドン、ポ
リアクリルアミド、ポリビニルメチルエーテル、
ポリビニルアセタール、ポリアクリル酸などの合
成高分子、ゼラチン、シエラツク、アラビアゴ
ム、カゼインなどの天然高分子、メチルビニルエ
ーテルとマレイン酸、アクリルアミドとダイアセ
トンアクリルアミド、アクリルアミドとビニルア
ルコールなどの共重合体、アクリロニトリルグラ
フト化ポリビニルアルコール、グリシジルメタク
リレートグラフト化ポリビニルアルコール、β−
オキシエチルメタクリレートグラフト化ポリビニ
ルアルコールなどのグラフト化された高分子、カ
ルボキシメチルセルローズ、ヒドロキシメチルセ
ルローズ、ヒドロキシプロピルセルローズ、ポリ
ーL−グルタミン酸(Na塩)などの半合成高分
子材料などを挙げることができる。
これらの水溶性高分子材料の少なくとも一種は
水溶性ビスアジド化合物、または水溶性ジアゾ化
合物と紫外線の作用により架橋する必要がある。
特に好ましい例はポリビニルピロリドンとポリビ
ニルアルコールを併用して使用する場合である。
この場合、ポリビニルピロリドンのポリビニルア
ルコールに対する配合割り合いは重量比で0.1〜
8.0、好しくは0.5〜3.0の範囲である。0.5未満の
場合には鮮明なパターンが得られず、また3.0を
超える時には付着力が低下するからである。
ポリビニルピロリドンとポリビニルアルコール
を前記条件で使用する場合、水溶性ビスアジド化
合物の水溶性ジアゾ化合物に対する配合割り合い
は重量比で1〜10、好しくは3〜7の範囲に選択
する必要がある。3未満の場合には感光性が低
く、また7を超えると付着力が低下するからであ
る。
前述の水溶性高分子材料、水溶性ビスアジド化
合物および水溶性ジアゾ化合物の他に感光液中に
少量の界面活性剤、例えばポリエチレングリコー
ル、アルキルフエノキシポリエチレンオキサイド
燐酸エステルヘキサメタリン酸ナトリウムなどを
また少量のアルコール類、例えばアルコール、グ
リセリン、エチレングリコール、ソルビトール、
トリブチルアルコールなどに添加して感光液の消
泡性や感光膜の形成性を高めることができる。
次に第1の実施例について述べる。
第2表に示した組成の水溶性フオトレジストを
調整し、これを非発光性光吸収物質被膜工程に適
用して特性を調べた。[Table] The present invention was made in view of the above-mentioned conventional problems, and particularly relates to a photoresist used for pattern formation of a fluorescent surface of a color picture tube having a non-luminous light-absorbing substance coating on the inner surface of the face panel. The object of the present invention is to provide a method for forming a pattern using a novel photoresist that fully satisfies the characteristics and provides high sensitivity and a wide working range. As a result of examining various water-soluble photoresists that do not have the above-mentioned problems, the inventor found that when a water-soluble polymer is used in combination with a water-soluble bisazide compound and a water-soluble diazo compound as a crosslinking agent, the drawbacks of the azide photoresist are found. Not only is the adhesion strength improved, the photosensitivity and thermal stability of the photosensitive solution, which are disadvantages of diazo photoresists, surprisingly, when these crosslinking agents are used together, the synergistic effect of the crosslinking agents is improved. It was found that extremely high sensitivity, which cannot be obtained when a crosslinking agent is used alone, can be obtained. That is,
The photoresist according to the present invention is (1) a photoresist comprising a water-soluble bisazide compound, a water-soluble diazo compound, and a water-soluble polymer material. (2) The water-soluble polymer material is a mixture of polyvinylpyrrolidone and polyvinyl alcohol, and the weight ratio of polyvinylpyrrolidone to polyvinyl alcohol is in the range of 0.5 to 3.0, and the water-soluble bisazide compound is a water-soluble diazo The proportion to the compound is 3.0 to 7.0 by weight
It is characterized by being within the range of . Next, a method for forming a pattern using a photoresist according to the present invention will be explained in detail. First, water-soluble bisazide compounds used in the present invention include, for example, 4,4'-diazidostilbene 2,2'-disulfonic acid, 4,4'-diazidobenzalacetophenone-2
-sulfonic acid, 4,4'-diazidostilbene-2-carboxylic acid, and salts thereof. Examples of water-soluble diazo compounds include benzidine tetrazonium chloride, 3,3'-dimethylbenzine tetrazonium chloride, 3,3'-dimethoxybenzidine tetrazonium chloride, and 4,4'-diaminodiphelamine. These are tetrazonium chloride, tetrazonium sulfate of 3,3'-diethylbenzidine, formalin condensate of diazodiphenylamine, and their double salts. Examples of water-soluble polymer materials include polyvinyl alcohol, polyvinylpyrrolidone, polyacrylamide, polyvinyl methyl ether,
Synthetic polymers such as polyvinyl acetal and polyacrylic acid, natural polymers such as gelatin, silica, gum arabic, and casein, copolymers of methyl vinyl ether and maleic acid, acrylamide and diacetone acrylamide, acrylamide and vinyl alcohol, and acrylonitrile grafts. polyvinyl alcohol, glycidyl methacrylate grafted polyvinyl alcohol, β-
Examples include grafted polymers such as oxyethyl methacrylate grafted polyvinyl alcohol, semi-synthetic polymer materials such as carboxymethyl cellulose, hydroxymethyl cellulose, hydroxypropyl cellulose, and poly L-glutamic acid (Na salt). At least one of these water-soluble polymer materials must be crosslinked with a water-soluble bisazide compound or a water-soluble diazo compound by the action of ultraviolet light.
A particularly preferred example is when polyvinylpyrrolidone and polyvinyl alcohol are used in combination.
In this case, the proportion of polyvinylpyrrolidone to polyvinyl alcohol is 0.1 to 0.1 by weight.
8.0, preferably in the range of 0.5 to 3.0. This is because if it is less than 0.5, a clear pattern cannot be obtained, and if it exceeds 3.0, the adhesion force decreases. When polyvinylpyrrolidone and polyvinyl alcohol are used under the above conditions, the ratio of the water-soluble bisazide compound to the water-soluble diazo compound must be selected in a weight ratio of 1 to 10, preferably 3 to 7. This is because if the number is less than 3, the photosensitivity will be low, and if it is more than 7, the adhesive force will be reduced. In addition to the water-soluble polymer material, water-soluble bisazide compound and water-soluble diazo compound mentioned above, a small amount of surfactant such as polyethylene glycol, alkyl phenoxy polyethylene oxide phosphate ester sodium hexametaphosphate, etc. is also added to the photosensitive solution. Alcohols, such as alcohol, glycerin, ethylene glycol, sorbitol,
It can be added to tributyl alcohol or the like to improve the antifoaming properties of photosensitive liquids and the forming properties of photosensitive films. Next, a first example will be described. A water-soluble photoresist having the composition shown in Table 2 was prepared, and its properties were investigated by applying it to a non-luminescent light-absorbing material coating process.
【表】【table】
【表】
注1:K−90(GAF社(米国)製、商品名)
注2:EG−40(日本合成(株)製、商品名)
注3:4,4′−ジアジドスチルベン−2,2′−ジ
スルフオン酸ナトリウム
注4:ジアゾジフエニルアミンのホルマリン縮合
体(燐酸塩)
注5:PVPとPVAの和の水溶性フオトレジスト
に対する割り合いは重量比で0.01(一定)
に、アジドとジアゾの和のPVPとPVAの
和に対する割り合いは重量比で0.07(一定)
に保つた。水溶性フオトレジストの残部は
純水である。
紫外線に対する感光性を調べた結果を第1図に
示した。(組成番号#8〜14に対応)ここで感度
とは20型ブラツクストライプ型カラー受像管にお
いて、シヤドウマスク径0.200mmから0.190mm(セ
ンター部)のパターンサイズを得るに必要な露光
時間(照度30000lux)である。曲線21からアジ
ド/ジアゾ=5付近において、最大の感度が得ら
れておりその値は感光性に優ると言われているア
ジド系フオトレジストの感度に比較して2倍以上
となつていることが判る。また、アジド/ジアゾ
が3以下となるとジアゾ系フオトレジストの感度
が支配的になることが判る。この曲線21は
PVP/PVA=1で行なつた。
次に付着力に対する効果を調べた結果を第2図
に示した。曲線22から判るように、アジド/ジ
アゾが7以上になると付着力は次第に低下するこ
とが判る。この曲線22もPVP/PVA=1で行
なつた。但し◎:極めて良好、〇:良好、△:や
や不良、×:不良であり、実用可能レベルとして
は◎〜〇の範囲である。
また、PVP/PVAの割り合いを変えた場合の
付着力、パターンの鮮明度について調べた結果を
第3図および第4図に示した(組成番号#1〜7
に対応。)曲線23,24から判る様に、PVP/
PVAの適切な配合割り合いは0.5〜3.0の範囲にあ
ることが判る。◎,〇,△,×は第2図と同様で
ある。
この様にして得られたパターン膜を有するフエ
ース内面にグラフアイト膜を形成したのち、飽和
スルフアミン酸ナトリウム溶液を使用してパター
ン膜を剥離した結果、全ての組成のパターン膜も
容易に剥離でき、支障が全くないことが判つた。
また、感光液の保存安定性を室温にて1ケ月間
放置した組成#3,#8,#14の3つの感光液に
ついて調べた結果、#3,#14、即ち、本発明に
係る水溶性フオトレジスト、公知のアジド系フオ
トレジストの感度は調整初期とほとんど変らない
ことが判つた。一方、#8、即ち、公知のジアゾ
系フオトレジストは、60秒以上の露光時間を必要
とし、初期の値に比較して感度は50%〜70%に低
下していることが判つた。
次に第2の実施例を説明するが、この場合第3
表に示した組成の水溶性フオトレジストを使用す
る以外、第1の実施例と同様にしてフオトレジス
トの特性を調べた結果、感度は30000ルツクス、
13秒で、第1の実施例の組成#11の感度に近いも
のであつた。
この他、パターンの付着力、パターンの鮮明
度、スルフアミン酸ソーダに対する剥離特性とも
良好であつた。[Table] Note 1: K-90 (manufactured by GAF (USA), trade name) Note 2: EG-40 (manufactured by Nippon Gosei Co., Ltd., trade name) Note 3: 4,4'-Diazidostilbene-2 , Sodium 2'-disulfonate Note 4: Formalin condensate of diazodiphenylamine (phosphate) Note 5: The ratio of the sum of PVP and PVA to the water-soluble photoresist is 0.01 (constant) by weight.
The ratio of the sum of azide and diazo to the sum of PVP and PVA is 0.07 (constant) by weight.
I kept it. The remainder of the water-soluble photoresist is pure water. The results of examining the photosensitivity to ultraviolet light are shown in FIG. (Corresponding to composition numbers #8 to 14) Sensitivity here refers to the exposure time required to obtain a pattern size with a shadow mask diameter of 0.200 mm to 0.190 mm (center area) in a 20-inch black stripe color picture tube (illuminance 30000 lux). It is. From curve 21, the maximum sensitivity is obtained near azide/diazo = 5, and the value is more than twice the sensitivity of azide-based photoresists, which are said to have superior photosensitivity. I understand. Furthermore, it can be seen that when the ratio of azide/diazo is 3 or less, the sensitivity of the diazo photoresist becomes dominant. This curve 21 is
This was done with PVP/PVA=1. Next, the effect on adhesion was investigated and the results are shown in Figure 2. As can be seen from curve 22, when the azide/diazo ratio increases to 7 or more, the adhesion force gradually decreases. This curve 22 was also performed with PVP/PVA=1. However, ◎: Very good, ○: Good, △: Slightly poor, ×: Poor, and the practical level is in the range of ◎ to ○. Figures 3 and 4 show the results of investigating the adhesion force and pattern clarity when changing the PVP/PVA ratio (composition numbers #1 to 7).
Compatible with ) As can be seen from curves 23 and 24, PVP/
It can be seen that the appropriate blending ratio of PVA is in the range of 0.5 to 3.0. ◎, 〇, △, and × are the same as in Fig. 2. After forming a graphite film on the inner surface of the face having the patterned film thus obtained, the patterned film was peeled off using a saturated sodium sulfamate solution. As a result, patterned films of all compositions could be easily peeled off. It turned out that there were no problems at all. In addition, as a result of examining the storage stability of three photosensitive liquids with compositions #3, #8, and #14 left at room temperature for one month, it was found that #3, #14, that is, the water-soluble It was found that the sensitivity of the photoresist, a known azide-based photoresist, was almost unchanged from the initial stage of adjustment. On the other hand, it was found that #8, ie, a known diazo photoresist, required an exposure time of 60 seconds or more, and the sensitivity was reduced to 50% to 70% compared to the initial value. Next, a second embodiment will be explained. In this case, the third embodiment
The characteristics of the photoresist were investigated in the same manner as in the first example except that a water-soluble photoresist having the composition shown in the table was used. As a result, the sensitivity was 30,000 lux,
The sensitivity was 13 seconds, which was close to the sensitivity of composition #11 of the first example. In addition, the pattern adhesion, pattern clarity, and release properties against sodium sulfamate were also good.
【表】【table】
【表】
以上を整理すると水溶性ビスアジド化合物と水
溶性ジアゾ化合物および水溶性高分子材料からな
るフオトレジストからなり、特に水溶性高分子材
料がポリビニルピロリドンとポリビニルアルコー
ルの配合物であり、このポリビニルピロリドンの
ポリビニルアルコールに対する配合比を重量比で
0.5〜3.0の範囲とし、かつ水溶性ビスアジド化合
物の水溶性ジアゾ化合物に対する配合比が重量比
で3.0〜7.0の範囲にすることにより非発光性光吸
収物質被膜のきれ、全体むらはビスアジド/
PVP系なみ、付着力はジアゾ/PVA系なみ、感
度は両レジストの最大値を最大30%うわまわる特
性が得られた。
上述のように本発明のパターン形成方法は従来
の異なつた特性の水溶性レジスト2種及び水溶性
高分子材料を所定量混ぜることによつて各単独レ
ジストの欠点をなくし、加えていずれのレジスト
よりも高い感度特性を得ることが可能であり、そ
の工業的価値は極めて大である。[Table] To summarize the above, the photoresist is composed of a water-soluble bisazide compound, a water-soluble diazo compound, and a water-soluble polymer material. In particular, the water-soluble polymer material is a blend of polyvinylpyrrolidone and polyvinyl alcohol, and this polyvinylpyrrolidone Compounding ratio of polyvinyl alcohol to polyvinyl alcohol by weight
By adjusting the weight ratio of the water-soluble bisazide compound to the water-soluble diazo compound to be in the range of 3.0 to 7.0, the cracking and overall unevenness of the non-luminescent light-absorbing substance coating can be reduced by bisazide/
The results showed that the adhesive strength was comparable to that of PVP resists, the adhesion strength was comparable to that of diazo/PVA resists, and the sensitivity exceeded the maximum value of both resists by up to 30%. As mentioned above, the pattern forming method of the present invention eliminates the drawbacks of each individual resist by mixing two conventional water-soluble resists with different characteristics and a water-soluble polymer material in predetermined amounts, and also eliminates the disadvantages of each resist alone. It is also possible to obtain high sensitivity characteristics, and its industrial value is extremely large.
第1図はビスアジド/ジアゾ比による感度を示
す曲線図、第2図はビスアジド/ジアゾ比による
付着力を示す曲線図、第3図はビスアジド/ジア
ゾ一定の時のPVP/PVA比による付着力を示す
曲線図、第4図はビスアジド/ジアゾ一定時の
PVP/PVAによるきれ、むらを示す曲線図であ
る。
21,22,23,24……特性曲線。
Figure 1 is a curve diagram showing the sensitivity depending on the bisazide/diazo ratio, Figure 2 is a curve diagram showing the adhesive force depending on the bisazide/diazo ratio, and Figure 3 is a curve diagram showing the adhesive force depending on the PVP/PVA ratio when the bisazide/diazo ratio is constant. The curve diagram shown in Figure 4 is for constant bisazide/diazo
FIG. 3 is a curve diagram showing cracks and unevenness due to PVP/PVA. 21, 22, 23, 24...characteristic curves.
Claims (1)
物と水溶性ジアゾ化合物および水溶性高分子材料
からなるフオトレジスト被膜を形成する工程と、
シヤドウマスクを用いて前記フオトレジスト被膜
の特定部分を露光により硬化させる工程と、現像
により前記フオトレジスト被膜の非露光部分を除
去し、フオトレジスト被膜のドツトを形成する工
程と、現像後の前記フエースパネル内面の全域に
非発光性光吸収物質被膜を被覆する工程と、前記
ドツトおよびこのドツト上の前記非発光性光吸収
物質被膜にホールを形成する工程とを含むことを
特徴とするパターン形成方法。 2 水溶性高分子材料がポリビニルピロリドンと
ポリビニルアルコールの配合物であり、前記ポリ
ビニルピロリドンの前記ポリビニルアルコールに
対する配合割り合いが重量比で0.5〜3.0の範囲で
あり、かつ水溶性ビスアジド化合物の水溶性ジア
ゾ化合物に対する配合割り合いが重量比で3.0〜
7.0の範囲であることを特徴とする特許請求の範
囲第1項記載のパターン形成方法。[Scope of Claims] 1. A step of forming a photoresist film made of a water-soluble bisazide compound, a water-soluble diazo compound, and a water-soluble polymer material on the inner surface of the face panel;
a step of curing a specific portion of the photoresist film by exposure using a shadow mask; a step of removing the unexposed portion of the photoresist film by development to form dots of the photoresist film; and a step of forming dots of the photoresist film, and the face panel after development. A pattern forming method comprising the steps of: coating the entire inner surface with a non-luminescent light-absorbing material coating; and forming holes in the dots and the non-luminescent light-absorbing material coating on the dots. 2. The water-soluble polymer material is a mixture of polyvinylpyrrolidone and polyvinyl alcohol, and the weight ratio of the polyvinylpyrrolidone to the polyvinyl alcohol is in the range of 0.5 to 3.0, and the water-soluble bisazide compound is a water-soluble diazo The compounding ratio to the compound is 3.0 or more by weight
7.0 range, the pattern forming method according to claim 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13979880A JPS5765644A (en) | 1980-10-08 | 1980-10-08 | Forming method for pattern |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13979880A JPS5765644A (en) | 1980-10-08 | 1980-10-08 | Forming method for pattern |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19054481A Division JPS57146247A (en) | 1981-11-30 | 1981-11-30 | Water-soluble photoresist |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5765644A JPS5765644A (en) | 1982-04-21 |
| JPH0146980B2 true JPH0146980B2 (en) | 1989-10-12 |
Family
ID=15253667
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13979880A Granted JPS5765644A (en) | 1980-10-08 | 1980-10-08 | Forming method for pattern |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5765644A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63181234A (en) * | 1987-01-22 | 1988-07-26 | Toshiba Corp | Method for forming fluorescent screen of color cathode-ray tube |
-
1980
- 1980-10-08 JP JP13979880A patent/JPS5765644A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5765644A (en) | 1982-04-21 |
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