JPH0154429B2 - - Google Patents
Info
- Publication number
- JPH0154429B2 JPH0154429B2 JP61198052A JP19805286A JPH0154429B2 JP H0154429 B2 JPH0154429 B2 JP H0154429B2 JP 61198052 A JP61198052 A JP 61198052A JP 19805286 A JP19805286 A JP 19805286A JP H0154429 B2 JPH0154429 B2 JP H0154429B2
- Authority
- JP
- Japan
- Prior art keywords
- carbon film
- raw material
- base material
- benzene
- conductive carbon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
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- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 claims description 36
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 28
- 229910052799 carbon Inorganic materials 0.000 claims description 28
- 239000002994 raw material Substances 0.000 claims description 28
- 239000000463 material Substances 0.000 claims description 21
- 238000000034 method Methods 0.000 claims description 17
- 230000015572 biosynthetic process Effects 0.000 claims description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 7
- 238000010884 ion-beam technique Methods 0.000 claims description 6
- 229930195733 hydrocarbon Natural products 0.000 claims description 5
- 150000002430 hydrocarbons Chemical class 0.000 claims description 5
- 150000004945 aromatic hydrocarbons Chemical class 0.000 claims description 3
- 239000004215 Carbon black (E152) Substances 0.000 claims 2
- 239000010408 film Substances 0.000 description 26
- 239000002585 base Substances 0.000 description 17
- 239000000758 substrate Substances 0.000 description 14
- 238000003786 synthesis reaction Methods 0.000 description 7
- 150000002500 ions Chemical class 0.000 description 6
- 235000012431 wafers Nutrition 0.000 description 6
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 4
- 230000001133 acceleration Effects 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 239000003921 oil Substances 0.000 description 4
- BBEAQIROQSPTKN-UHFFFAOYSA-N pyrene Chemical compound C1=CC=C2C=CC3=CC=CC4=CC=C1C2=C43 BBEAQIROQSPTKN-UHFFFAOYSA-N 0.000 description 4
- 150000001721 carbon Chemical class 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 229910002804 graphite Inorganic materials 0.000 description 3
- 239000010439 graphite Substances 0.000 description 3
- 238000007737 ion beam deposition Methods 0.000 description 3
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 3
- UFWIBTONFRDIAS-UHFFFAOYSA-N Naphthalene Chemical compound C1=CC=CC2=CC=CC=C21 UFWIBTONFRDIAS-UHFFFAOYSA-N 0.000 description 2
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 2
- 150000007824 aliphatic compounds Chemical class 0.000 description 2
- MWPLVEDNUUSJAV-UHFFFAOYSA-N anthracene Chemical compound C1=CC=CC2=CC3=CC=CC=C3C=C21 MWPLVEDNUUSJAV-UHFFFAOYSA-N 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- GVEPBJHOBDJJJI-UHFFFAOYSA-N fluoranthrene Natural products C1=CC(C2=CC=CC=C22)=C3C2=CC=CC3=C1 GVEPBJHOBDJJJI-UHFFFAOYSA-N 0.000 description 2
- 229910021469 graphitizable carbon Inorganic materials 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 239000001294 propane Substances 0.000 description 2
- 238000000197 pyrolysis Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229920000049 Carbon (fiber) Polymers 0.000 description 1
- OTMSDBZUPAUEDD-UHFFFAOYSA-N Ethane Chemical compound CC OTMSDBZUPAUEDD-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 238000001069 Raman spectroscopy Methods 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 150000001338 aliphatic hydrocarbons Chemical class 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 150000001336 alkenes Chemical class 0.000 description 1
- 150000001345 alkine derivatives Chemical class 0.000 description 1
- 150000001491 aromatic compounds Chemical class 0.000 description 1
- 239000004917 carbon fiber Substances 0.000 description 1
- 239000003575 carbonaceous material Substances 0.000 description 1
- 238000003763 carbonization Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- -1 etc. Chemical compound 0.000 description 1
- 238000005087 graphitization Methods 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 229910000765 intermetallic Inorganic materials 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- IOLCXVTUBQKXJR-UHFFFAOYSA-M potassium bromide Chemical compound [K+].[Br-] IOLCXVTUBQKXJR-UHFFFAOYSA-M 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 239000011780 sodium chloride Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
- Apparatuses And Processes For Manufacturing Resistors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Non-Insulated Conductors (AREA)
- Manufacturing Of Electric Cables (AREA)
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は、優れた導電性を有する易黒鉛化性
炭素膜の形成方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a method for forming a graphitizable carbon film having excellent electrical conductivity.
従来、易黒鉛化炭素膜を得る方法は、いわゆる
熱分解法が一般的である（例えば、大谷ら“炭素
化工学の基礎”1980年、オーム社発行）
この方法は、原料であるメタン、エタン、プロ
パン、ベンゼン等の脂肪族または芳香族炭化水素
の雰囲気中で反応系を高温（1200〜2200℃）に加
熱することにより炭化水素を熱分解し、基材上に
炭素膜を生成させるものである。
Conventionally, the so-called pyrolysis method is commonly used to obtain graphitizable carbon films (for example, Otani et al., "Fundamentals of Carbonization Engineering", 1980, published by Ohm Publishing Co., Ltd.). Hydrocarbons are thermally decomposed by heating the reaction system to high temperatures (1,200 to 2,200℃) in an atmosphere of aliphatic or aromatic hydrocarbons such as propane, benzene, etc., and a carbon film is generated on the substrate. be.
この方法で得られた炭素膜は、常温における電
導度が1200℃熱処理の場合２×102S／cm程度で、
2200℃熱処理では５×102S／cm程度である。 The carbon film obtained by this method has an electrical conductivity of about 2×10 2 S/cm at room temperature when heat-treated at 1200°C.
In heat treatment at 2200°C, it is about 5×10 2 S/cm.
上記従来の方法は、炭素膜の合成温度が1200〜
2200℃と高温であるため、基材として使用できる
材料の種類が限定されるという問題があつた。
In the above conventional method, the carbon film synthesis temperature is 1200~
Due to the high temperature of 2200°C, there was a problem in that the types of materials that could be used as the base material were limited.
すなわち、高温では、低融点物質を基板として
用いることができないが、合成温度が1200℃未満
では、得られた炭素膜は高電導度を得る構造にな
らなかつた。 That is, at high temperatures, low melting point substances cannot be used as substrates, but at synthesis temperatures below 1200°C, the resulting carbon film did not have a structure that would provide high electrical conductivity.
この発明は、上記従来技術の問題点に鑑み、合
成温度が1200℃未満であつても、優れた導電性を
有する炭素膜を得る方法を提供するものである。 In view of the problems of the prior art described above, the present invention provides a method for obtaining a carbon film having excellent conductivity even at a synthesis temperature of less than 1200°C.
この発明は、炭素膜の形成にイオンビーム法を
採用することによつて、従来技術における問題点
を解決したもので、その要旨とするところは、炭
化水素を原料として、900〜1200℃の温度に加熱
された基材上に、クラスターイオンビーム法によ
り導電性炭素膜を形成することを特徴とする導電
性炭素膜の形成方法にある。
This invention solves the problems in the conventional technology by employing the ion beam method to form a carbon film. The present invention provides a method for forming a conductive carbon film, comprising forming the conductive carbon film on a heated base material by a cluster ion beam method.
この発明において原料となる炭化水素として、
例えば、メタン、エタン、プロパン等の飽和脂肪
族化合物、アルケン、アルキン等の不飽和脂肪族
化合物、ベンゼン、ナフタレン、アントラセン、
ピレン等の芳香族化合物が用いられる。 The hydrocarbons used as raw materials in this invention include:
For example, saturated aliphatic compounds such as methane, ethane, propane, unsaturated aliphatic compounds such as alkenes and alkynes, benzene, naphthalene, anthracene,
Aromatic compounds such as pyrene are used.
この発明において使用される基材として、Fe、
Ni、Al等の金属材料、GaAs、InP等の金属間化
合物材料、SiO2、Al2O3、TiO2等の金属酸化物
材料、グラフアイト、ダイヤモンド薄膜、炭素繊
維等の炭素系材料、NaCl、KBr等のアルカリハ
ライド結晶性材料が挙げられる。 As the base material used in this invention, Fe,
Metal materials such as Ni and Al, intermetallic compound materials such as GaAs and InP, metal oxide materials such as SiO 2 , Al 2 O 3 , and TiO 2 , carbon-based materials such as graphite, diamond thin film, and carbon fiber, NaCl , KBr, and other alkali halide crystalline materials.
特にシリコンウエハーは平滑な表面が得やす
く、良好な炭素膜を形成することができる。 In particular, silicon wafers are easy to obtain smooth surfaces and can form good carbon films.
この発明において採用するイオンビーム法とし
ては、例えば、第１図に示すような装置が用いら
れる（エツチ・ウスイ、アイ・ヤマダ、テー・タ
カギ；ジヤーナル オブ ヴアキユーム・サイエ
ンス・テクノロジー、A4(1)、52（1986）（Ｈ・
Usui、I.Yamada、Ｔ・Takagi；Ｊ・Vac・
Technol・））。 As the ion beam method employed in this invention, for example, an apparatus as shown in Fig. 1 is used (Usui Etsuchi, Yamada Ai, Takagi Tae; Journal of Vacuum Science and Technology, A4(1), 52 (1986) (H.
Usui, I. Yamada, T. Takagi; J. Vac.
Technol・)).
第１図において、１はチヤンバーで、該チヤン
バー１内には原料２が導入される坩堝３がもうけ
られている。原料である炭化水素は、チヤンバー
１の外部に設けた原料導入系４からチヤンバー１
内の原料導入管５を通つて坩堝３へ導入される。 In FIG. 1, 1 is a chamber, and within the chamber 1 is provided a crucible 3 into which a raw material 2 is introduced. Hydrocarbons, which are raw materials, are introduced into the chamber 1 from a raw material introduction system 4 installed outside the chamber 1.
The raw material is introduced into the crucible 3 through the raw material introduction pipe 5 inside.
原料導入管５の反対側の坩堝３壁には原料を噴
射するノズル６が設けられており、該ノズル６の
対面方向には基材７がセツトされる基材設置台８
が設けられている。 A nozzle 6 for injecting the raw material is provided on the wall of the crucible 3 on the opposite side of the raw material introduction pipe 5, and a base material setting table 8 on which the base material 7 is set is provided in the direction facing the nozzle 6.
is provided.
この装置において坩堝３のまわりには坩堝加熱
用グラフアイトヒーター９を有し、その外周には
遮熱板１０と冷却ジヤケツト１１が設けられてい
る。ノズル６から基材７へ到る間には噴射された
原料をイオン化する電子放出フイラメント１２、
生じたイオンを基材方向へ加速するイオン加速電
極１３、さらにシヤツター１４が順次設けられて
いる。電子放出フイラメント１２は噴出された原
料ビーム１５に対し、三方から電子を放出するよ
うな配置をとり、該電子放出フイラメント１２と
原料ビーム１５との間には電子加速電極（グリツ
ド）１６がもうけられている。 In this apparatus, a crucible 3 is surrounded by a graphite heater 9 for heating the crucible, and a heat shield plate 10 and a cooling jacket 11 are provided around the outer periphery of the graphite heater 9. an electron-emitting filament 12 that ionizes the injected raw material between the nozzle 6 and the base material 7;
An ion accelerating electrode 13 for accelerating the generated ions toward the substrate and a shutter 14 are provided in this order. The electron emitting filament 12 is arranged to emit electrons from three sides to the ejected raw material beam 15, and an electron accelerating electrode (grid) 16 is provided between the electron emitting filament 12 and the raw material beam 15. ing.
基材７の周囲には基材７を加熱するヒーター１
７と該ヒーター１７外方に設けられ該ヒーター１
７からの熱の放散を防ぐための遮熱板１８が設け
られている。 A heater 1 for heating the base material 7 is installed around the base material 7.
7 and the heater 17 provided outside the heater 1
A heat shield plate 18 is provided to prevent heat dissipation from 7.
なお、この装置において１９は冷却水導入口で
あり、２０は油回転ポンプ、２１は油拡散ポンプ
である。 In this device, 19 is a cooling water inlet, 20 is an oil rotary pump, and 21 is an oil diffusion pump.
この装置を用いた場合のこの発明における導電
性炭素膜の形成は以下のように行われる。
Formation of a conductive carbon film in the present invention using this apparatus is performed as follows.
基材である例えばシリコンウエハーをチヤンバ
ー１内の基材設置台にセツトし、チヤンバー１内
を油回転ポンプ２０と油拡散ポンプ２１から構成
されている減圧装置によつて、例えば、１〜２×
10-6mmHgに減圧する。次いで、原料が導入され
た坩堝３のノズル６から原料が噴出される。この
とき原料がベンゼンの様に揮発しやすいものであ
る場合は坩堝３を特に加熱する必要はないが、例
えば、常温で固体であるピレンの場合は100〜200
℃に加熱される。また、原料蒸気をクラスターす
なわち凝集体にすると特に良好な炭素膜がえられ
る。そのためには、チヤンバー１内の圧力が坩堝
３内の圧力102分の１とするとよい。 A base material, such as a silicon wafer, is set on a base material installation stand in the chamber 1, and the inside of the chamber 1 is heated by a pressure reducing device consisting of an oil rotary pump 20 and an oil diffusion pump 21, for example, by 1 to 2×.
Reduce pressure to 10 -6 mmHg. Next, the raw material is ejected from the nozzle 6 of the crucible 3 into which the raw material has been introduced. At this time, if the raw material is easily volatile like benzene, there is no need to particularly heat the crucible 3, but for example, in the case of pyrene, which is solid at room temperature,
heated to ℃. In addition, a particularly good carbon film can be obtained when the raw material vapor is formed into clusters or aggregates. For this purpose, the pressure inside the chamber 1 is preferably set to 1/10 2 of the pressure inside the crucible 3.
電子放出フイラメント１２と電子加速電極１６
間を例えば数十〜数百Ｖに印加すると、原料ビー
ム１５に向かつて電子が放出され、原料はイオン
化される。 Electron emitting filament 12 and electron accelerating electrode 16
When a voltage of, for example, several tens to several hundreds of volts is applied between the two, electrons are emitted toward the raw material beam 15, and the raw material is ionized.
イオン化された原料はイオン加速電極１３によ
り基材に向かつて加速される。 The ionized raw material is accelerated toward the base material by the ion accelerating electrode 13.
基材７は予め900〜1200℃に加熱されている。 The base material 7 is heated to 900 to 1200°C in advance.
以上の方法法によつて、基材表面に比較的低温
で導電性に優れた炭素膜が形成される。 By the above method, a carbon film with excellent conductivity is formed on the surface of the base material at a relatively low temperature.
実施例 １
基材としてシリコンウエハー基板（厚み約
400μm未ドープ）を使用し、チヤンバー内の基材
設置台にセツトし、該基板を回転しながら1000℃
に加熱した。
Example 1 A silicon wafer substrate (thickness approx.
400 μm undoped), set it on the base material installation stand inside the chamber, and heated it to 1000℃ while rotating the substrate.
heated to.
次いで、ベンゼンを原料に用い、イオンビーム
法として第１図の装置を以下の条件で用い、基板
上に灰白色の炭素膜を得た。 Next, using benzene as a raw material and using the apparatus shown in FIG. 1 as an ion beam method under the following conditions, a grayish-white carbon film was obtained on the substrate.
原料ベンゼンのチヤンバー内での圧力
（ベース圧 ２×10-6mmHg） 5.0×10-5mmHg
電子放出フイラメント電流 30A
電子加速電圧 500V
イオン加速電圧 3KV
ノズルー基板間距離 56cm
得られた炭素膜は、膜厚が0.16μm程度、室温
における電導度が約1000S／cmであつた。この炭
素膜の黒鉛化度は、ラマンスペクトル測定の結果
から、ベンゼンを1500〜1600℃で熱分解して得ら
れる炭素と同程度であつた。Pressure in the chamber of raw material benzene (base pressure 2×10 -6 mmHg) 5.0×10 -5 mmHg Electron emission filament current 30A Electron acceleration voltage 500V Ion acceleration voltage 3KV Distance between nozzle and substrate 56cm The obtained carbon film The thickness was about 0.16 μm, and the electrical conductivity at room temperature was about 1000 S/cm. The degree of graphitization of this carbon film was found to be comparable to that of carbon obtained by thermally decomposing benzene at 1,500 to 1,600°C, according to the results of Raman spectroscopy.
実施例 ２
ベンゼンを原料として、1000℃に加熱されたシ
リコンウエハー基板上に以下の条件で合成を行
い、基板上に黒茶色の炭素膜を得た。Example 2 Using benzene as a raw material, synthesis was performed on a silicon wafer substrate heated to 1000° C. under the following conditions to obtain a black-brown carbon film on the substrate.
原料ベンゼンのチヤンバー内での圧力
（ベース圧、２×10-6mmHg） 5.0×10-5mmHg
電子放出フイラメント電流 30A
電子加速電圧 500V
イオン加速電圧 3KV
ノズルー基板間距離 15cm
得られた炭素膜は、膜厚が1.2μm程度、室温に
おける電導度が110S／cmであつた。Pressure in the chamber of raw material benzene (base pressure, 2×10 -6 mmHg) 5.0×10 -5 mmHg Electron emission filament current 30A Electron acceleration voltage 500V Ion acceleration voltage 3KV Distance between nozzle and substrate 15cm The obtained carbon film was The film thickness was about 1.2 μm, and the electrical conductivity at room temperature was 110 S/cm.
実施例 ３
ベンゼンを原料として、1000℃に加熱した石英
ガラス基板上に、実施例２と同様のイオンビーム
蒸着の条件合成を行い、黒茶色の炭素膜を得た。Example 3 Using benzene as a raw material, synthesis was carried out under the same ion beam deposition conditions as in Example 2 on a quartz glass substrate heated to 1000° C. to obtain a blackish brown carbon film.
この炭素膜は、膜厚が2μm程度で、室温におけ
る導電度が20S／cmであつた。 This carbon film had a thickness of about 2 μm and a conductivity of 20 S/cm at room temperature.
比較例 １
ベンゼンを原料として、特に加熱を行つていな
いシリコンウエハー基板上に、実施例１と同様の
イオンビーム蒸着の条件で合成を行つたが、炭素
膜は得られなかつた。Comparative Example 1 Synthesis was performed using benzene as a raw material on a silicon wafer substrate that was not particularly heated under the same ion beam deposition conditions as in Example 1, but no carbon film was obtained.
比較例 ２
ベンゼンを原料として、特に加熱を行つていな
いシリコンウエハー基板上に実施例２と同様のイ
オンビーム蒸着の条件で合成を行い、基板上に茶
色の炭素膜を得た。Comparative Example 2 Using benzene as a raw material, synthesis was carried out on a silicon wafer substrate that was not particularly heated under the same ion beam deposition conditions as in Example 2, and a brown carbon film was obtained on the substrate.
この炭素膜は、膜厚が1.5μm程度で、室温にお
ける電導度が7.7×10-3S／cmであつた。 This carbon film had a thickness of about 1.5 μm and an electrical conductivity of 7.7×10 −3 S/cm at room temperature.
この発明によれば、基材の温度が900〜1200℃
と従来の熱分解法に比べて低温であつても高電導
性の炭素膜を得ることが出来る。
According to this invention, the temperature of the base material is 900 to 1200℃
Compared to conventional pyrolysis methods, highly conductive carbon films can be obtained even at low temperatures.
第１図は、この発明において採用されるイオン
ビーム法の装置の概略を示す断面図である。
１……チヤンバー、２……原料、３……坩堝、
６……ノズル、７……基材、１２……電子放出フ
イラメント、１３……イオン加速電極、１５……
原料ビーム、１６……電子加速電極、１７……ヒ
ータ。
FIG. 1 is a sectional view schematically showing an apparatus for the ion beam method employed in the present invention. 1...chamber, 2...raw material, 3...crucible,
6... Nozzle, 7... Base material, 12... Electron emission filament, 13... Ion accelerating electrode, 15...
Raw material beam, 16... electron accelerating electrode, 17... heater.
Claims (1)
に加熱された基材上にクラスターイオンビーム法
により導電性炭素膜を形成することを特徴とする
導電性炭素膜の形成方法。 ２ 炭化水素が、芳香族炭化水素である特許請求
の範囲第１項記載の導電性炭素膜の形成方法。 ３ 芳香族炭化水素が、ベンゼンである特許請求
の範囲第２項記載の導電性炭素膜の形成方法。 ４ 基材が、シリコンウエハーである特許請求の
範囲第１項記載の導電性炭素膜の形成方法。[Claims] 1. Formation of a conductive carbon film, characterized in that the conductive carbon film is formed by a cluster ion beam method on a base material heated to a temperature of 900 to 1200°C using hydrocarbon as a raw material. Method. 2. The method for forming a conductive carbon film according to claim 1, wherein the hydrocarbon is an aromatic hydrocarbon. 3. The method for forming a conductive carbon film according to claim 2, wherein the aromatic hydrocarbon is benzene. 4. The method for forming a conductive carbon film according to claim 1, wherein the base material is a silicon wafer.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19805286A JPS6357769A (en) | 1986-08-26 | 1986-08-26 | Formation of conductive carbon film |
| US07/183,526 US4795656A (en) | 1986-08-26 | 1988-04-14 | Cluster ion plating method for producing electrically conductive carbon film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19805286A JPS6357769A (en) | 1986-08-26 | 1986-08-26 | Formation of conductive carbon film |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6357769A JPS6357769A (en) | 1988-03-12 |
| JPH0154429B2 true JPH0154429B2 (en) | 1989-11-17 |
Family
ID=16384731
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19805286A Granted JPS6357769A (en) | 1986-08-26 | 1986-08-26 | Formation of conductive carbon film |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6357769A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002223056A (en) * | 2001-01-26 | 2002-08-09 | Hitachi Kokusai Electric Inc | Circuit pattern forming method |
| JP7613728B2 (en) * | 2021-03-11 | 2025-01-15 | 学校法人東北工業大学 | Carbon compounds and their manufacturing methods |
-
1986
- 1986-08-26 JP JP19805286A patent/JPS6357769A/en active Granted
Non-Patent Citations (1)
| Title |
|---|
| PCT IDENTIFICATION=1986 * |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6357769A (en) | 1988-03-12 |
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