JPH0157782B2 - - Google Patents
Info
- Publication number
- JPH0157782B2 JPH0157782B2 JP3413981A JP3413981A JPH0157782B2 JP H0157782 B2 JPH0157782 B2 JP H0157782B2 JP 3413981 A JP3413981 A JP 3413981A JP 3413981 A JP3413981 A JP 3413981A JP H0157782 B2 JPH0157782 B2 JP H0157782B2
- Authority
- JP
- Japan
- Prior art keywords
- photoreceptor
- substrate
- selenium
- photoconductive layer
- protrusions
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
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Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
- G03G5/00—Recording-members for original recording by exposure, e.g. to light, to heat or to electrons; Manufacture thereof; Selection of materials therefor
- G03G5/14—Inert intermediate or cover layers for charge-receiving layers
- G03G5/142—Inert intermediate layers
- G03G5/144—Inert intermediate layers comprising inorganic material
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Photoreceptors In Electrophotography (AREA)
- Chemical Treatment Of Metals (AREA)
- Physical Vapour Deposition (AREA)
Description
【発明の詳細な説明】
本発明は電子写真用感光体に関し、詳しくは導
電性基体として表面に酸化アルミニウムの1種で
あるベーマイト皮膜が形成されたAl基体を用い
たセレン又はセレン系電子写真用感光体に関す
る。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a photoreceptor for electrophotography, and more specifically, a selenium or selenium-based photoreceptor for electrophotography using an Al substrate on which a boehmite film, which is a type of aluminum oxide, is formed on the surface as a conductive substrate. Regarding photoreceptors.
セレン又はセレン系感光体はAl,In2O3、ステ
ンレスなどの導電性基体(導電性基板)上にSe
又はセレン合金からなる蒸着層(光導電層)を設
けたものである。 Selenium or selenium-based photoreceptors are made of Se on a conductive substrate (conductive substrate) such as Al, In 2 O 3 or stainless steel.
Alternatively, a vapor deposited layer (photoconductive layer) made of a selenium alloy is provided.
ところで、こうした感光体の製造においては導
電性基体と光導電層との接着性、光導電層の強度
等を向上させるために、導電性基体表面に微細な
凹凸を施すことがしばしば行なわれている。ま
た、この微細凹凸が光導電層表面に反映されると
感光体に転写分離性及びエツヂ効果がもたらされ
るといつたことも確められている。 By the way, in the production of such photoreceptors, the surface of the conductive substrate is often provided with minute irregularities in order to improve the adhesion between the conductive substrate and the photoconductive layer, the strength of the photoconductive layer, etc. . It has also been confirmed that when these fine irregularities are reflected on the surface of the photoconductive layer, transfer separation and edge effects are brought about on the photoreceptor.
だが、感光体表面(光導電層表面)に微細凹凸
が形成されることが有利であるといつてもその大
きさ、深さ等は自ずから制約されるべきものであ
つて、そのためセレン又はセレン系感光体を製造
する際には、導電性基体又は光導電層の表面に
種々の処理を行なつているのが実情である。例え
ば、基体表面をバブ研磨、電解研磨、ダイヤびき
などしてから、この上に光導電層を蒸着しその蒸
着層面をシランカツプリング剤で処理する(特開
昭50―98327号、特開昭49―39425号、特開昭50―
109732号などの公報)、基体表面をホーニング加
工する(特開昭51―58954号公報)、基体表面を金
属酸化物微粉末で研磨する(特公昭54―13979号
公報)、導体表面を超仕上加工を施すことにより
粗面化する(特開昭53―13424号公報)などであ
る。なお、これらの処理において基体表面が処理
された場合には、次に行なわれる蒸着に先立つて
基体表面を脱脂処理するのが一般的である。ま
た、これらの処理の他にも基体表面にさらに純導
電性金属を蒸着して導電性基体とされることも提
案されている。 However, even though it is advantageous to form fine irregularities on the surface of the photoreceptor (the surface of the photoconductive layer), the size, depth, etc. of the irregularities must be naturally limited, and therefore selenium or selenium-based When manufacturing photoreceptors, the reality is that various treatments are performed on the surface of the conductive substrate or photoconductive layer. For example, after bubbling, electropolishing, or diamond polishing the surface of the substrate, a photoconductive layer is deposited thereon and the surface of the deposited layer is treated with a silane coupling agent. No. 49-39425, Japanese Patent Publication No. 1973-
109732, etc.), honing the substrate surface (Japanese Patent Application Laid-open No. 58954/1983), polishing the surface of the substrate with fine metal oxide powder (Japanese Patent Publication No. 13979/1987), and superfinishing the conductor surface. For example, the surface is roughened by processing (Japanese Unexamined Patent Publication No. 13424/1983). Note that when the substrate surface is treated in these treatments, the substrate surface is generally subjected to a degreasing treatment prior to the next vapor deposition. In addition to these treatments, it has also been proposed to further vapor deposit a pure conductive metal on the surface of the substrate to make it conductive.
かかる処理が施される理由は、感光体表面に形
成される微細凹凸の形態が理想又は理想に近づけ
るためになされるのであるが、現実にはなかなか
思うようにはいかず感光体表面にはかなり数の大
きな突起が生じるようになるのが通常である。こ
の突起は電子写真作像プロセスにおいて種々の問
題を引き起している。その幾つかをあげると、感
光体表面に形成された大きな又は多数の突起によ
つて、(1)直接的に潜像電荷の帯電ムラを発生させ
たり、あるいは現像時に機械的にトナーの付着ム
ラなどを生ぜしめ、その結果斑点のあるコピー画
像をもたらすこと、(2)ブレードを用いるクリーニ
ング方式を採用した電子写真法の場合には、感光
体表面の突起によつてブレードが除々に削られ、
クリーニング性能が極端に悪化し、そして最終的
にはクリーニング不良を招来しコピー画像にいわ
ゆる黒スジが多くみられるようになること、等で
ある。 The reason why such a treatment is performed is to make the shape of the fine irregularities formed on the surface of the photoreceptor ideal or close to the ideal. However, in reality, it is difficult to achieve the desired shape, and there are quite a few irregularities on the surface of the photoreceptor. Usually, a large protrusion appears. These protrusions cause various problems in the electrophotographic imaging process. To name a few, large or numerous protrusions formed on the surface of the photoreceptor can (1) directly cause uneven charging of the latent image, or mechanically cause uneven toner adhesion during development; (2) In the case of electrophotography that uses a cleaning method using a blade, the blade is gradually scraped by the protrusions on the surface of the photoreceptor;
The cleaning performance is extremely deteriorated, which ultimately leads to poor cleaning and the appearance of many so-called black lines in the copied image.
このように、感光体表面に形成される不必要な
突起は電子写真作像プロセスに極めて悪影響を及
ぼすものであるが、これらの突起の発生は主とし
て光導電層の真空蒸着時に形成される。この突起
発生の原因としてはこれまで基体表面の凹凸の状
態、ホコリの付着などが考えられてきており、そ
れを回避するために既述のごときいろいろな研磨
法、パークレン洗浄、エツチング、水洗などの対
策が施されてきている。また、蒸着時の、蒸着源
中セレン又はセレン系合金の熱による突沸現象も
突起発生原因の一つと考えられており、この突沸
現象を防ぐ対策も提案されてきた。しかし、これ
らすべてを満足しても、現在のところなお突起の
発生が完全に又は完全に近いまでに防止できない
のが実情である。 As described above, unnecessary protrusions formed on the surface of the photoreceptor have a very negative effect on the electrophotographic image forming process, but these protrusions are mainly formed during the vacuum deposition of the photoconductive layer. The causes of this protrusion have so far been thought to be the unevenness of the substrate surface, the adhesion of dust, etc. In order to avoid this, various polishing methods such as those mentioned above, percolene cleaning, etching, water washing, etc. have been used. Countermeasures have been taken. Furthermore, bumping phenomenon due to the heat of selenium or selenium-based alloys in the vapor deposition source during vapor deposition is considered to be one of the causes of protrusion generation, and measures to prevent this bumping phenomenon have been proposed. However, even if all of these are satisfied, the reality is that it is still not possible to completely or nearly completely prevent the occurrence of protrusions.
本発明者らは、この突起発生について多くの研
究、検討を行なつた結果、この種の突起は蒸着初
期における殊にアルミニウム基体(板状、ドラム
状、ベルト状のものを含めて)表面とセレン又は
セレン系合金のごとき蒸着物質との物理化学的な
界面現象のバラツキに基づくことをつきとめた。
本発明は、かかる知見に基づいてなされたもので
ある。 The present inventors have conducted numerous studies and studies on the occurrence of these protrusions, and have found that these protrusions occur particularly on the surface of aluminum substrates (including plate-shaped, drum-shaped, and belt-shaped ones) during the initial stage of vapor deposition. It was found that this is due to variations in physicochemical interface phenomena with deposited substances such as selenium or selenium-based alloys.
The present invention has been made based on this knowledge.
しかして、本発明の目的は、上記蒸着界面の物
理化学的な作業のバラツキをなくすことにより感
光体表面の突起発生を防止せしめた電子写真用感
光体を提供することにある。本発明の他の目的
は、Al基体の表面に多少の大き目の凹凸が存在
していても、Al基体表面の組成を均一にするこ
とによつて表面の濡れ性、熱伝導性が均一とな
り、その結果仮りに突起が生じてもその数が著し
く少ない蒸着膜が形成される電子写真用感光体を
提供することにある。本発明のさらに他の目的
は、製造過程にあつて従来より行なわれてきた他
の下地表面処理の余裕度を増すことのできる電子
写真用感光体を提供することにある。 SUMMARY OF THE INVENTION Accordingly, an object of the present invention is to provide an electrophotographic photoreceptor in which the formation of protrusions on the surface of the photoreceptor is prevented by eliminating variations in the physicochemical operations at the vapor deposition interface. Another object of the present invention is to make the wettability and thermal conductivity of the surface uniform by making the composition of the surface of the Al base uniform, even if there are some large irregularities on the surface of the Al base. As a result, it is an object of the present invention to provide an electrophotographic photoreceptor in which a deposited film is formed in which the number of protrusions is extremely small even if they occur. Still another object of the present invention is to provide an electrophotographic photoreceptor that can increase the latitude for other base surface treatments that have been conventionally performed during the manufacturing process.
即ち、本発明の電子写真用感光体は、アルミニ
ウム基体表面の少くとも画像領域部分に厚さ約
1000Å以上のベーマイト皮膜を形成した導電性基
体の前記ベーマイト皮膜上に、セレン又はセレン
合金からなる光導電層が設けられていることを特
徴とするものである。 That is, in the electrophotographic photoreceptor of the present invention, at least the image area portion of the surface of the aluminum substrate has a thickness of approximately
It is characterized in that a photoconductive layer made of selenium or a selenium alloy is provided on the boehmite film of a conductive substrate on which a boehmite film of 1000 Å or more is formed.
以下に本発明をさらに詳細に説明すると、本発
明の電子写真用感光体はこのようにアルミニウム
基体の表面に意図的に一定厚の特定の酸化アルミ
ニウム皮膜を形成した導電性基体を使用したもの
である。もつとも、一般的にはAl表面は部分的
に酸化膜が形成されていることが多いが、その程
度の状態では、既述のとおり、むしろ表面組成の
バラツキ(即ち、表面物性のバラツキ)が大き
く、逆に突起を発生させやすい状態にある。ま
た、基体の均一な組成を達成するために純粋な金
属Alを蒸着した後、光導電層を蒸着することも
考えられるが、そうした場合には光導電層の界面
接着性が極めて悪くなり簡単に剥離してしまうと
いつたこともみられる。 The present invention will be explained in more detail below. The electrophotographic photoreceptor of the present invention uses a conductive substrate in which a specific aluminum oxide film of a constant thickness is intentionally formed on the surface of an aluminum substrate. be. However, in general, an oxide film is often formed partially on the Al surface, but in such a state, as mentioned above, the variation in the surface composition (that is, the variation in the surface physical properties) is rather large. On the contrary, it is in a state where protrusions are likely to occur. In addition, in order to achieve a uniform composition of the substrate, it is possible to deposit the photoconductive layer after depositing pure metal Al, but in such a case, the interfacial adhesion of the photoconductive layer would be extremely poor and it would be easy to It can also be seen as it peels off.
従つて、本発明においてはAl基体表面により
均一な酸化膜の形成を行なつている。このアルミ
ニウム酸化膜としては本発明ではベーマイト
(Al・O・OH)皮膜が使用される。これは種々
実験の結果、各種アルミニウム酸化膜のうちベー
マイト皮膜が特に有効であることが明らかとなつ
たからである。ただ、このベーマイト皮膜は必ず
しも純粋なものとして得られなくとも本発明の目
的を達成できるものである。なお、ベーマイト皮
膜の生成は2Al+4H2O=2Al・O・OH+3H2の
反応式によるものと考えられている。この反応は
60℃以上の温水のもとで行なうのが望ましい。更
に、この反応を促進させるために例えば適当量の
アルミン酸ナトリウムを温水に添加させて行なう
ことも効果的である。 Therefore, in the present invention, a more uniform oxide film is formed on the surface of the Al substrate. In the present invention, a boehmite (Al.O.OH) film is used as the aluminum oxide film. This is because, as a result of various experiments, it has become clear that among various aluminum oxide films, a boehmite film is particularly effective. However, the object of the present invention can be achieved even if this boehmite film is not necessarily obtained in a pure form. The formation of the boehmite film is thought to be based on the reaction formula: 2Al+4H 2 O=2Al.O.OH+3H 2 . This reaction is
It is preferable to do this under warm water of 60℃ or higher. Furthermore, it is also effective to add, for example, an appropriate amount of sodium aluminate to hot water in order to accelerate this reaction.
ベーマイト皮膜の厚さは約1000Å以上、好まし
くは1000Å〜1μmが適当である。1000Åより薄い
と均一なベーマイト膜が形成されにくく、一方
1μmより厚くなつてもそれにより効果の増大はそ
れ程認められない。 The thickness of the boehmite film is approximately 1000 Å or more, preferably 1000 Å to 1 μm. If it is thinner than 1000Å, it will be difficult to form a uniform boehmite film;
Even if the thickness becomes thicker than 1 μm, the effect is not significantly increased.
以上のような導電性基体のベーマイト膜上には
光導電層が設けられている。光導電層は具体的に
はSe、Se―Te、Se―As、Se―Te―As、Se―
Te―Clのごときセレン又はセレン系合金からな
るものである。光導電層の厚さは30〜60μm程度
である。 A photoconductive layer is provided on the boehmite film of the conductive substrate as described above. Specifically, the photoconductive layer is Se, Se-Te, Se-As, Se-Te-As, Se-
It is made of selenium or selenium-based alloys such as Te-Cl. The thickness of the photoconductive layer is approximately 30 to 60 μm.
実際に本発明感光体を製造するには、Al基体
の表面を研磨した後洗浄し、この上にベーマイト
膜を形成せしめて導電性基体とし、更にこの導電
性基体のベーマイト皮膜上に常法によつてSe又
はSe系合金を蒸着せしめて光導電層を設けるよ
うにすればよい。この製造過程において、ベーマ
イト膜を形成させるには、清浄にしたAl基体を
あらかじめ60℃以上に維持した温水に浸漬して膜
の厚さを1000Å〜1μmとなるようにすればよい。
ここでの水は望ましくはイオン交換水のごとき純
水であり、抵抗が0.1メガオームcm以上好ましく
は1メガオームcm以上のものである。 In order to actually manufacture the photoreceptor of the present invention, the surface of the Al substrate is polished and then washed, a boehmite film is formed on this to form a conductive substrate, and then a conventional method is applied on the boehmite film of this conductive substrate. Therefore, the photoconductive layer may be provided by vapor depositing Se or a Se-based alloy. In this manufacturing process, to form a boehmite film, the cleaned Al substrate may be immersed in hot water maintained at 60° C. or higher in advance so that the film has a thickness of 1000 Å to 1 μm.
The water here is preferably pure water such as ion-exchanged water, and has a resistance of 0.1 megohm-cm or more, preferably 1 megohm-cm or more.
以上のようにして製造される本発明の感光体が
電子写真作像プロセスにおいて良好な結果をもた
らすかについての充分かつ詳細な検討は末だなさ
れていないが、均一なベーマイト膜がAl基体表
面に形成されたことにより、Al基体表面にかな
り大きめの凹凸が存在していてもこれが可成り小
さなものとなり表面の組成を均一にせしめ、また
導電性基体表面の濡れ性、熱伝導性が均一かつ良
好になつたことから突起のない蒸着膜が形成され
たことによるものと考えられる。さらに、本発明
感光体によれば導電性基体表面と蒸着層とのなじ
みも良好となつたことから、蒸着層(光導電層)
が導電性基体から剥離してしまうような不都合は
みられなくなつたといつた効果も認められる。 Although sufficient and detailed studies have not yet been conducted as to whether the photoreceptor of the present invention produced as described above will produce good results in the electrophotographic imaging process, it is possible to form a uniform boehmite film on the surface of the Al substrate. As a result of this formation, even if there are quite large irregularities on the surface of the Al substrate, these become considerably smaller, making the surface composition uniform, and the wettability and thermal conductivity of the conductive substrate surface are uniform and good. This is thought to be due to the formation of a deposited film without protrusions. Furthermore, according to the photoreceptor of the present invention, the surface of the conductive substrate and the vapor deposited layer were well compatible, so that the vapor deposited layer (photoconductive layer)
Another effect is that the inconvenience of peeling off from the conductive substrate is no longer observed.
次に実施例及び比較例を示す。 Next, examples and comparative examples will be shown.
実施例 1
アルミニウムドラム(120φ×400mm)の表面を
研磨した後、パークレンで2分間洗浄した。さら
に水洗を2度くり返した(各々1分間)。次いで、
これをあらかじめ80℃に維持したイオン交換水中
に10分間浸漬してAlドラム表面に1000Å〜1μm
厚の範囲にあるベーマイト皮膜を形成せしめた。Example 1 After polishing the surface of an aluminum drum (120φ×400mm), it was washed with perclean for 2 minutes. Furthermore, the water washing was repeated twice (each time for 1 minute). Then,
This was immersed in ion-exchanged water maintained at 80℃ for 10 minutes to form a layer of 1000Å to 1μm on the Al drum surface.
A boehmite film with a range of thickness was formed.
乾燥後、このドラム状導電性基体を真空蒸着装
置にセツトし、10-5torrの減圧下で基体温度を
190℃に保持し蒸着源温度を400℃としてAs2Se3
を30分間蒸着せしめて、約50μm厚の光導電層を
前記導電性基体上に設けた。 After drying, this drum-shaped conductive substrate was set in a vacuum evaporator and the substrate temperature was lowered under a reduced pressure of 10 -5 torr.
As 2 Se 3 was maintained at 190℃ and the evaporation source temperature was 400℃.
was deposited for 30 minutes to provide a photoconductive layer approximately 50 μm thick on the conductive substrate.
このようにして製造された電子写真用感光体の
表面を顕微鏡及び目視観察により調べたところ、
感光体表面全体で20μm以上の突起は確認されな
かつた。 When the surface of the electrophotographic photoreceptor manufactured in this way was examined using a microscope and visual observation, it was found that
No protrusions larger than 20 μm were observed on the entire surface of the photoreceptor.
実施例 2
80℃に維持したイオン交換水中に10分間浸漬し
た代りに、そのイオン交換水にアルミン酸ナトリ
ウム(500mg/)を加えた水溶液を70℃に維持
し8分間浸漬したこと以外は実施例1とまつたく
同様にして電子写真用感光体を製造した。Example 2 Example except that instead of being immersed in ion-exchanged water maintained at 80°C for 10 minutes, an aqueous solution prepared by adding sodium aluminate (500 mg/) to the ion-exchanged water was maintained at 70°C and immersed for 8 minutes. An electrophotographic photoreceptor was produced in the same manner as in Example 1.
この感光体表面の突起の状態を調べたところ、
感光体表面全体で20μm以上のものは確認されな
かつた。 When we investigated the condition of the protrusions on the surface of the photoreceptor, we found that
No particles larger than 20 μm were observed on the entire surface of the photoreceptor.
比較例
イオン交換水中に浸漬してベーマイト皮膜の形
成を省略した以外は実施例1とまつたく同様にし
て電子写真用感光体を製造した。Comparative Example An electrophotographic photoreceptor was produced in the same manner as in Example 1, except that the formation of a boehmite film by immersion in ion-exchanged water was omitted.
この感光体表面の突起の状態を調べたところ、
感光体表面全体で20μm以上の突起が50個以上存
在するのが確認された。 When we investigated the condition of the protrusions on the surface of the photoreceptor, we found that
It was confirmed that 50 or more protrusions of 20 μm or more were present on the entire surface of the photoreceptor.
Claims (1)
分に厚さ1000Å以上のベーマイト皮膜を形成した
導電性基体の前記ベーマイト皮膜上に、セレン又
はセレン合金からなる光導電層が設けられている
ことを特徴とする電子写真用感光体。1. A photoconductive layer made of selenium or a selenium alloy is provided on the boehmite film of a conductive substrate in which a boehmite film with a thickness of 1000 Å or more is formed on at least the image area portion of the aluminum substrate surface. Photoreceptor for electrophotography.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3413981A JPS57147644A (en) | 1981-03-10 | 1981-03-10 | Photoreceptor for electrophotography |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3413981A JPS57147644A (en) | 1981-03-10 | 1981-03-10 | Photoreceptor for electrophotography |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57147644A JPS57147644A (en) | 1982-09-11 |
| JPH0157782B2 true JPH0157782B2 (en) | 1989-12-07 |
Family
ID=12405877
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3413981A Granted JPS57147644A (en) | 1981-03-10 | 1981-03-10 | Photoreceptor for electrophotography |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57147644A (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60174864A (en) * | 1984-02-15 | 1985-09-09 | Showa Alum Corp | Surface treatment of aluminum substrate for forming thin film |
| JPS60174865A (en) * | 1984-02-15 | 1985-09-09 | Showa Alum Corp | Surface treatment of aluminum substrate for forming thin film |
| JPS60174863A (en) * | 1984-02-15 | 1985-09-09 | Showa Alum Corp | Surface treatment of aluminum substrate for forming thin film |
| JP2668360B2 (en) * | 1987-07-24 | 1997-10-27 | 株式会社リコー | Electrophotographic photoreceptor |
| JP2638185B2 (en) * | 1988-12-23 | 1997-08-06 | 富士電機株式会社 | Manufacturing method of photoreceptor for electrophotography |
| JPH0329959A (en) * | 1989-06-27 | 1991-02-07 | Fuji Electric Co Ltd | Production of electrophotographic sensitive body |
-
1981
- 1981-03-10 JP JP3413981A patent/JPS57147644A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS57147644A (en) | 1982-09-11 |
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