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JPH0160163B2 - - Google Patents
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JPH0160163B2 - - Google Patents

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Publication number
JPH0160163B2
JPH0160163B2 JP57109248A JP10924882A JPH0160163B2 JP H0160163 B2 JPH0160163 B2 JP H0160163B2 JP 57109248 A JP57109248 A JP 57109248A JP 10924882 A JP10924882 A JP 10924882A JP H0160163 B2 JPH0160163 B2 JP H0160163B2
Authority
JP
Japan
Prior art keywords
epoxy resin
weight
composition
type epoxy
present
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP57109248A
Other languages
Japanese (ja)
Other versions
JPS58225120A (en
Inventor
Takaaki Fukai
Hiromitsu Takanohashi
Takeshi Hatsutori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Gas Chemical Co Inc
Original Assignee
Mitsubishi Gas Chemical Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Gas Chemical Co Inc filed Critical Mitsubishi Gas Chemical Co Inc
Priority to JP10924882A priority Critical patent/JPS58225120A/en
Publication of JPS58225120A publication Critical patent/JPS58225120A/en
Publication of JPH0160163B2 publication Critical patent/JPH0160163B2/ja
Granted legal-status Critical Current

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  • Compositions Of Macromolecular Compounds (AREA)
  • Epoxy Resins (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Organic Insulating Materials (AREA)

Description

【発明の詳細な説明】[Detailed description of the invention]

本発明は半導体封止用エポキシ樹脂組成物に関
するものであり、詳しくはエポキシ樹脂としてノ
ボラツク型エポキシ樹脂、硬化剤としてフエノー
ルノボラツク樹脂、および充填剤として組成物中
50〜90重量%のシリカ粉末を必須成分としてなる
エポキシ樹脂組成物に、ビスフエノール型エポキ
シ樹脂を0.1〜10重量%、ポリエステルエラスト
マーを0.05〜10重量%混合してなる半導体封止用
エポキシ樹脂組成物であり、耐熱性、耐水性を保
持し、かつ耐クラツク性の優れたものである。 半導体封止用エポキシ樹脂組成物はその電気特
性、耐熱性、耐水性等の面から、多官能エポキシ
化合物、硬化剤としてのフエノール類、充填剤と
してのシリカ粉末、及び硬化触媒を必須成分とす
ることは広く知られている。 近年、半導体素子は大型化、高集積化の傾向を
強め、従来のエポキシ樹脂組成物で半導体素子を
封止した場合、ヒートサイクルテストを行なう
と、封止樹脂にクラツクが起きたり、チツプにク
ラツクが生ずるなど半導体部品の信頼性を低下さ
せるという問題が生じている。これは耐熱性、耐
水性という観点から開発されてきた現状の多官能
エポキシ樹脂、フエノール類、シリカという半導
体封止用のエポキシ樹脂組成物の硬化物は非常に
かたく可撓性が欠けることに起因するものであ
る。 本発明者らはかかる問題点に関して研究を進
め、特願昭57−66035号「半導体封止用エポキシ
樹脂組成物」を完成させるに至つたが、さらに研
究を進めた結果、先願の組成物に別の一成分とし
てビスフエノール型エポキシ樹脂を添加すると、
耐熱性を保持しながらさらにレベルの高い耐クラ
ツク性を持つ組成物となることを見出し本発明を
完成させたものである。 以下本発明の構成について説明する。 本発明で使用されるノボラツク型エポキシ樹脂
は通常知られているもので、フエノールノボラツ
ク型エポキシ樹脂、クレゾールノボラツク型エポ
キシ樹脂、があげられるが、高信頼性を要求され
る半導体封止用樹脂としては耐水性に優れ、エポ
キシ当量で180〜250のクレゾールノボラツク型エ
ポキシ樹脂が特に好ましい。 本発明で使用されるフエノールノボラツク樹脂
はエポキシ樹脂の硬化剤として知られているもの
であるが、流動特性及び耐熱性の点から分子量
400〜2000のものが好ましく、又フリーフエノー
ルの含有量が3%以下であることが好ましい。 本発明においてノボラツク型エポキシ樹脂とフ
エノールノボラツク樹脂の配合比はエポキシ基に
対する水酸基の割合で0.5〜1.5が好ましい。 本発明で使用されるシリカ粉末は溶融シリカ、
天然の結晶シリカがあげられ、その含有量は組成
物中50〜90重量%で好ましくは65〜80重量%であ
る。又シリカ粉末の粒径は成型の容易さから最大
粒径が200μ以下のもので好ましくは150μ以下で
ある。また平均粒径では成型性の点から1〜50μ
で特に5〜25μが好ましい。また封止材料の信頼
性を損なわない程度に目的により他の充填剤例え
ば炭素繊維、ガラス繊維、窒化ホウ素、アルミナ
粉、マグネシア粉等を併用しても良い。 本発明で使用されるビスフエノール型エポキシ
樹脂は多くの文献(例えば「エポキシ樹脂」日刊
工業新聞社、1978年)で知られているものでビス
フエノールとエピクロルヒドリンとの脱塩酸反応
によつて得られるものである。高信頼性を要求さ
れる半導体封止用樹脂としては平均分子量が300
〜4000のもので好ましくは350〜3000のものであ
る。また組成物中の含有量は0.1〜10重量%で好
ましくは0.2〜5重量%である。組成物中のビス
フエノール型エポキシ樹脂の量が0.1%未満だと
半導体封止材料としての耐クラツク性改良が充分
でなく、10%以上だと耐熱性が低化するので好ま
しくない。 本発明で使用するポリエステルエラストマーは
プラスチツクスVol30(3)P11〜19同P33〜41
(1979)及び日本ゴム協会誌Vol51(10)P779〜796
(1978)で定義されるように分子鎖内にある長さ
をもつた硬い部分(ハードセグメント)とある長
さをもつた柔らかい部分(ソフトセグメント)の
異質のブロツクが2次元的に繰返しつながつてい
る熱可塑性エラストマーの一種であり、常温では
加硫ゴムのような弾性的性質を示し、高温では可
塑化され成形できる高分子材料であり、一般的に
はジオール、芳香族ジカルボン酸、ポリアルキレ
ンエーテルグリコールの重縮合反応によつて作ら
れ、その分子構造内にポリエステル部のハードセ
グメントとポリエーテル部のソフトセグメントを
持つものである。 本発明で使用されるポリエステルエラストマー
の一つの例を示せば下式(1)のようなものであり、
この例ではポリエステル部のハードセグメ ント(分子量約220×n)とポリエーテル部のソ
フトセグメント(lは平均で14;分子量約1156×
m)とからなつている。 本発明におけるポリエステルエラストマーの分
子量は5000〜50000、好ましくは10000〜40000の
ものであり、また分子中のソフトセグメントの量
がハードセグメントの量より多い方が好ましい。 ポリエステルエラストマーの組成物中の含有量
は0.05〜10重量%であり特に好ましくは0.1〜5.0
重量%である。組成物中のポリエステルエラスト
マー量が0.05%未満だと半導体封止材料としての
耐クラツク性が十分に改善されず10%以上だと耐
水性が低下するので好ましくない。 以上のような本発明の半導体封止用エポキシ樹
脂組成物には必要に応じて、シランカツプリング
剤、離型剤、顔料難燃剤を添加することも可能で
ある。 以下実施例、比較例で具体的に説明する。尚実
施例、比較例中、部及び%とあるのは重量部及び
重量%をさす。 実施例 1〜5 クレゾールノボラツク型エポキシ樹脂(商品
名;ESCN220L、住友化学工業(株)製)、フエノー
ルノボラツク樹脂、ビスフエノール型エポキシ樹
脂(商品名;エピコート1004、油化シエルエポキ
シ(株)製)、ポリエステルエラストマー(商品名;
プルプレンP−40H、東洋紡績(株)製)、溶融シリ
カ粉末及びその他の原料を第1表に示した組成割
合で混合した後、加熱混練し冷却して封止材料を
調整した。 これらの封止材料を用いて、テストピースを成
形し、さらに175℃、5時間のポストキユアーを
したものについてガラス転位温度の測定、及び
121℃、2気圧の水蒸気圧力釜中で100時間の処理
(PCT処理と記す)を行い、体積抵抗率を測定し
た。又、40Pin ICを成形し、ポストキユアーし
た後、150℃のシリコンオイル中60秒、液体窒素
中60秒浸漬をくり返すヒートサイクルテスト(耐
クラツク性)を行ない、ICの封止樹脂表面にク
ラツクが発生するまでのサイクル数を測定した。 これらの結果を第1表中に示した。 以上の結果、並びに、第1表中に示した比較例
との比較から本発明の半導体封止材料が、耐クラ
ツク性(ヒートサイクル数)においては、ビスフ
エノール型エポキシ樹脂、ポリエステルエラスト
マーの両者が入つていないもの(比較例1)や一
方のみのもの(比較例2、3、4)に比べきわめ
てすぐれていることがわかり、かつガラス転位温
度、及び体積抵抗率から耐熱性、耐水性などにお
いても劣化がないことがわかる。 比較例 1〜5 実施例において、ビスフエノール型エポキシ樹
脂及びポリエステルエラストマーの両者を用いな
い場合(比較例1)、一方のみ用いる場合(比較
例2、3、4)、及びビスフエノール型エポキシ
樹脂を多量に用いた場合(比較例5)について第
1表に示す組成割合で混合した以外は実施例と同
様とした。 結果を第1表に示した。
The present invention relates to an epoxy resin composition for semiconductor encapsulation, and more specifically, a novolak type epoxy resin is used as the epoxy resin, a phenol novolak resin is used as a hardening agent, and a filler is used in the composition.
An epoxy resin composition for semiconductor encapsulation made by mixing an epoxy resin composition containing 50 to 90% by weight of silica powder as an essential component, 0.1 to 10% by weight of a bisphenol type epoxy resin, and 0.05 to 10% by weight of a polyester elastomer. It has heat resistance, water resistance, and excellent crack resistance. Epoxy resin compositions for semiconductor encapsulation contain a polyfunctional epoxy compound, phenols as a curing agent, silica powder as a filler, and a curing catalyst as essential components in terms of electrical properties, heat resistance, water resistance, etc. This is widely known. In recent years, semiconductor devices have become larger and more highly integrated, and when semiconductor devices are encapsulated with conventional epoxy resin compositions, cracks may occur in the encapsulation resin or chips when heat cycle tests are performed. A problem has arisen in which the reliability of semiconductor components is lowered, such as by the occurrence of. This is due to the fact that the cured products of epoxy resin compositions for semiconductor encapsulation, which have been developed from the viewpoint of heat resistance and water resistance, such as polyfunctional epoxy resins, phenols, and silica, are extremely hard and lack flexibility. It is something to do. The present inventors conducted research on these problems and completed the patent application No. 57-66035 entitled "Epoxy resin composition for semiconductor encapsulation."However, as a result of further research, the composition of the earlier application was completed. When a bisphenol type epoxy resin is added as another component,
The present invention was completed by discovering that a composition can be obtained which has even higher crack resistance while maintaining heat resistance. The configuration of the present invention will be explained below. The novolak type epoxy resin used in the present invention is commonly known, and examples include phenol novolak type epoxy resin and cresol novolak type epoxy resin, but semiconductor encapsulation resins that require high reliability are used. Particularly preferred are cresol novolak type epoxy resins which have excellent water resistance and have an epoxy equivalent of 180 to 250. The phenol novolak resin used in the present invention is known as a curing agent for epoxy resins, but from the viewpoint of flow characteristics and heat resistance, the molecular weight
400 to 2000 is preferred, and the free phenol content is preferably 3% or less. In the present invention, the blending ratio of the novolac type epoxy resin and the phenol novolac resin is preferably 0.5 to 1.5 in terms of the ratio of hydroxyl groups to epoxy groups. The silica powder used in the present invention is fused silica,
Natural crystalline silica is mentioned, and its content in the composition is 50 to 90% by weight, preferably 65 to 80% by weight. The maximum particle size of the silica powder is 200μ or less, preferably 150μ or less, for ease of molding. In addition, the average particle size is 1 to 50 μm from the viewpoint of moldability.
In particular, 5 to 25μ is preferable. Further, depending on the purpose, other fillers such as carbon fiber, glass fiber, boron nitride, alumina powder, magnesia powder, etc. may be used in combination to the extent that the reliability of the sealing material is not impaired. The bisphenol-type epoxy resin used in the present invention is known from many documents (e.g., "Epoxy Resin", Nikkan Kogyo Shimbun, 1978), and is obtained by a dehydrochlorination reaction between bisphenol and epichlorohydrin. It is something. The average molecular weight is 300 for semiconductor encapsulation resin that requires high reliability.
-4000, preferably 350-3000. Further, the content in the composition is 0.1 to 10% by weight, preferably 0.2 to 5% by weight. If the amount of bisphenol type epoxy resin in the composition is less than 0.1%, crack resistance as a semiconductor encapsulating material will not be improved sufficiently, and if it is more than 10%, heat resistance will decrease, which is not preferable. The polyester elastomer used in the present invention is Plastics Vol. 30 (3) P11-19, P33-41.
(1979) and Japan Rubber Association Journal Vol51(10) P779-796
(1978), heterogeneous blocks of a hard segment with a certain length (hard segment) and a soft segment with a certain length (soft segment) are repeatedly connected in two dimensions within a molecular chain. It is a type of thermoplastic elastomer that exhibits elastic properties like vulcanized rubber at room temperature, and is a polymeric material that can be plasticized and molded at high temperatures.It is generally a polymeric material that is made of diols, aromatic dicarboxylic acids, and polyalkylene ethers. It is made by polycondensation reaction of glycol and has a hard segment of polyester part and a soft segment of polyether part in its molecular structure. One example of the polyester elastomer used in the present invention is as shown in the following formula (1),
In this example, the hard segment of the polyester part is (molecular weight approx. 220×n) and the soft segment of the polyether part (l is 14 on average; molecular weight approx. 1156×
m). The molecular weight of the polyester elastomer in the present invention is 5,000 to 50,000, preferably 10,000 to 40,000, and it is preferable that the amount of soft segments in the molecule is greater than the amount of hard segments. The content of polyester elastomer in the composition is 0.05 to 10% by weight, particularly preferably 0.1 to 5.0%.
Weight%. If the amount of polyester elastomer in the composition is less than 0.05%, crack resistance as a semiconductor encapsulating material will not be sufficiently improved, and if it is more than 10%, water resistance will decrease, which is not preferable. It is also possible to add a silane coupling agent, a mold release agent, and a pigment flame retardant to the epoxy resin composition for semiconductor encapsulation of the present invention as described above, if necessary. This will be specifically explained below using Examples and Comparative Examples. In Examples and Comparative Examples, parts and % refer to parts by weight and % by weight. Examples 1 to 5 Cresol novolac type epoxy resin (trade name: ESCN220L, manufactured by Sumitomo Chemical Co., Ltd.), phenol novolac resin, bisphenol type epoxy resin (trade name: Epicote 1004, Yuka Ciel Epoxy Co., Ltd.) ), polyester elastomer (product name;
Puruprene P-40H (manufactured by Toyobo Co., Ltd.), fused silica powder, and other raw materials were mixed in the composition ratios shown in Table 1, then heated, kneaded, and cooled to prepare a sealing material. Using these sealing materials, test pieces were molded and post-cured at 175°C for 5 hours, and the glass transition temperature was measured.
A treatment (referred to as PCT treatment) was performed for 100 hours in a steam pressure cooker at 121° C. and 2 atm, and the volume resistivity was measured. In addition, after molding and post-curing a 40Pin IC, we conducted a heat cycle test (crack resistance) by repeatedly dipping it in silicone oil at 150°C for 60 seconds and in liquid nitrogen for 60 seconds, and found that there were no cracks on the surface of the IC's sealing resin. The number of cycles until this occurred was measured. These results are shown in Table 1. From the above results and a comparison with the comparative examples shown in Table 1, the semiconductor encapsulation material of the present invention has superior crack resistance (number of heat cycles) to both bisphenol-type epoxy resin and polyester elastomer. It was found to be extremely superior to those without it (Comparative Example 1) or with only one of them (Comparative Examples 2, 3, 4), and the glass transition temperature, volume resistivity, heat resistance, water resistance, etc. It can be seen that there is no deterioration. Comparative Examples 1 to 5 In the Examples, there are cases in which both bisphenol-type epoxy resin and polyester elastomer are not used (Comparative Example 1), cases in which only one is used (Comparative Examples 2, 3, and 4), and cases in which bisphenol-type epoxy resin is used. In the case of using a large amount (Comparative Example 5), the same procedure as in the example was carried out except that the composition ratios shown in Table 1 were mixed. The results are shown in Table 1.

【表】【table】

【表】【table】

Claims (1)

【特許請求の範囲】[Claims] 1 エポキシ樹脂としてノボラツク型エポキシ樹
脂、硬化剤としてフエノールノボラツク樹脂、お
よび充填剤として組成物中50〜90重量%のシリカ
粉末を必須成分としてなるエポキシ樹脂組成物
に、ビスフエノール型エポキシ樹脂を0.1〜10重
量%、ポリエステルエラストマーを0.05〜10重量
%混合してなる半導体封止用エポキシ樹脂組成
物。
1 Add 0.1% of bisphenol type epoxy resin to an epoxy resin composition consisting of a novolac type epoxy resin as an epoxy resin, a phenol novolac resin as a curing agent, and 50 to 90% by weight of silica powder as a filler in the composition. ~10% by weight of an epoxy resin composition for semiconductor encapsulation, mixed with 0.05~10% by weight of a polyester elastomer.
JP10924882A 1982-06-25 1982-06-25 Epoxy resin composition for semiconductor encapsulation Granted JPS58225120A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10924882A JPS58225120A (en) 1982-06-25 1982-06-25 Epoxy resin composition for semiconductor encapsulation

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10924882A JPS58225120A (en) 1982-06-25 1982-06-25 Epoxy resin composition for semiconductor encapsulation

Publications (2)

Publication Number Publication Date
JPS58225120A JPS58225120A (en) 1983-12-27
JPH0160163B2 true JPH0160163B2 (en) 1989-12-21

Family

ID=14505364

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10924882A Granted JPS58225120A (en) 1982-06-25 1982-06-25 Epoxy resin composition for semiconductor encapsulation

Country Status (1)

Country Link
JP (1) JPS58225120A (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2674701B2 (en) * 1986-05-01 1997-11-12 日東電工株式会社 Semiconductor device
JPH0737513B2 (en) * 1987-03-31 1995-04-26 日立化成工業株式会社 Hybrid IC coating material
JP2576018B2 (en) * 1993-06-14 1997-01-29 日東電工株式会社 Resin tablet for semiconductor encapsulation
KR100388141B1 (en) * 1995-07-10 2003-10-17 도레이 가부시끼가이샤 Epoxy resin composition
JPH08239557A (en) * 1996-02-15 1996-09-17 Nitto Denko Corp Semiconductor encapsulation equipment
JP2922151B2 (en) * 1996-02-15 1999-07-19 日東電工株式会社 Semiconductor sealing device

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4899249A (en) * 1972-03-29 1973-12-15
US4202811A (en) * 1978-06-21 1980-05-13 Dow Corning Corporation Siloxane-epoxy molding compound with improved crack resistance
JPS56122857A (en) * 1980-02-29 1981-09-26 Nitto Electric Ind Co Ltd Preparation of epoxy resin composition
JPS6018145B2 (en) * 1980-09-22 1985-05-09 株式会社日立製作所 Resin-encapsulated semiconductor device
JPS58210920A (en) * 1982-05-31 1983-12-08 Shin Etsu Chem Co Ltd Thermosetting epoxy resin composition

Also Published As

Publication number Publication date
JPS58225120A (en) 1983-12-27

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