JPH021269B2 - - Google Patents
Info
- Publication number
- JPH021269B2 JPH021269B2 JP56211972A JP21197281A JPH021269B2 JP H021269 B2 JPH021269 B2 JP H021269B2 JP 56211972 A JP56211972 A JP 56211972A JP 21197281 A JP21197281 A JP 21197281A JP H021269 B2 JPH021269 B2 JP H021269B2
- Authority
- JP
- Japan
- Prior art keywords
- electric field
- optical element
- measured
- field
- dielectric material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R29/00—Arrangements for measuring or indicating electric quantities not covered by groups G01R19/00 - G01R27/00
- G01R29/12—Measuring electrostatic fields or voltage-potential
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Measuring Instrument Details And Bridges, And Automatic Balancing Devices (AREA)
- Measurement Of Current Or Voltage (AREA)
Description
【発明の詳細な説明】
この発明は、電気光学効果を有する光学素子を
用いて電界を測定する直流電界測定装置に関す
る。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a DC electric field measuring device that measures an electric field using an optical element having an electro-optic effect.
第１図には、電気光学効果を有する光学素子と
してポツケルス素子を用いて電界を測定する場合
の原理図を示している。図において、１は光源、
２は偏光子、３はポツケルス素子の単体、４は検
光子、５は受光器、６は電界の方向、７は光、８
ａ，８ｂはそれぞれ電界を発生させる高電圧電極
を示す。この両電極８ａ，８ｂ間の被測定場９に
は媒体（真空の場合も含む）が満たされている。 FIG. 1 shows a principle diagram when an electric field is measured using a Pockels element as an optical element having an electro-optic effect. In the figure, 1 is a light source,
2 is a polarizer, 3 is a single Pockels element, 4 is an analyzer, 5 is a light receiver, 6 is the direction of the electric field, 7 is light, 8
a and 8b each indicate a high voltage electrode that generates an electric field. The field 9 to be measured between the electrodes 8a and 8b is filled with a medium (including a vacuum).
以上の構成において、光源１から出た光７は、
偏光子２、ポツケルス素子３、検光子４を通つて
受光器５に入る。ポツケルス素子３は、電界６の
強さに比例して、通過する光７の回転角度を変化
させる性質を有しているので、筐体の外側から光
を被測定場９内に通過させて、両電極８ａ，８ｂ
間の電界の測定をポツケルス素子３には非接触、
かつ電気的に絶縁した状態で測定可能ならしめる
ものである。ところが被測定場９の電界が直流電
界であるとすると、被測定場の体積抵抗率とポツ
ケルス素子の体積抵抗率とが異なる場合には被測
定場内の電界が、ポツケルス素子の挿入によつて
歪んでしまい、正確な電界の測定ができないとい
う欠点があつた。 In the above configuration, the light 7 emitted from the light source 1 is
The light passes through a polarizer 2, a Pockels element 3, and an analyzer 4 and enters a light receiver 5. Since the Pockels element 3 has the property of changing the rotation angle of the light 7 passing therethrough in proportion to the strength of the electric field 6, it allows the light to pass from the outside of the housing into the field to be measured 9. Both electrodes 8a, 8b
The measurement of the electric field between the
Moreover, it is possible to perform measurement in an electrically insulated state. However, if the electric field in the field to be measured 9 is a DC electric field, if the volume resistivity of the field to be measured is different from the volume resistivity of the Pockels element, the electric field in the field to be measured will be distorted by the insertion of the Pockels element. The disadvantage was that it was impossible to measure the electric field accurately.
この発明は以上のような従来のものの欠点を解
消するためになされたもので、光学素子との組み
合せの体積抵抗率を被測定場内の媒体の体積抵抗
率に近付ける誘電体を被測定場内に設けて被測定
場の電界の歪みを減じさせて電界の測定を行なう
直流電界測定装置を提供しようとするものであ
る。 This invention was made in order to eliminate the above-mentioned drawbacks of the conventional ones, and it involves providing a dielectric material in the field to be measured that brings the volume resistivity of the combination with the optical element closer to the volume resistivity of the medium in the field to be measured. It is an object of the present invention to provide a DC electric field measuring device that measures an electric field by reducing the distortion of the electric field in a field to be measured.
以下、この発明の一実施例を図によつて説明す
る。第２図、第３図において、１２は複合光学素
子であり、被測定場９の直流電界内に設けられ
る。この複合光学素子１２は、中央部にポツケル
ス素子を光学素子１０として用い、電界に直角な
方向の両側から光学素子１０とは体積抵抗率の異
なる誘電体１１，１１で挾持した構造になつてい
る。ここで、ポツケルス素子１０の体積抵抗率を
ρn（単位を略す、以下同じ）、厚さをd1、電界方向
の断面積をＳ、誘電体１１の体積抵抗率をρt、厚
さをd2、電界方向の断面積をＳ、被測定場９の媒
体の体積抵抗率をρsとするとポツケルス素子１０
の抵抗RnはRn＝ρnd1／Ｓ、誘電体１１の抵抗Rt
は、両側分を合わせてRt＝ρt・2d2／Ｓとなる。 Hereinafter, one embodiment of the present invention will be described with reference to the drawings. In FIGS. 2 and 3, 12 is a composite optical element, which is provided within the DC electric field of the field 9 to be measured. This composite optical element 12 has a structure in which a Pockels element is used as the optical element 10 in the center and is sandwiched between dielectrics 11, 11 having a volume resistivity different from that of the optical element 10 from both sides in the direction perpendicular to the electric field. . Here, the volume resistivity of the Pockels element 10 is ρn (units are omitted, the same applies hereinafter), the thickness is d 1 , the cross-sectional area in the electric field direction is S, the volume resistivity of the dielectric 11 is ρt, and the thickness is d 2 , the cross-sectional area in the direction of the electric field is S, and the volume resistivity of the medium of the field to be measured 9 is ρs, then the Pockels element 10
The resistance Rn is Rn=ρnd 1 /S, the resistance Rt of the dielectric 11
The sum of both sides becomes Rt=ρt・2d 2 /S.
したがつて、ポツケルス素子１０の上下両側に
誘電体１１を一体的に積層した複合光学素子１２
の抵抗RpはRp＝（ρnd1＋2ρtd2）／Ｓとなる。 Therefore, a composite optical element 12 in which the dielectric material 11 is integrally laminated on both the upper and lower sides of the Pockels element 10 is constructed.
The resistance Rp is Rp=(ρnd 1 +2ρtd 2 )/S.
一方、この複合光学素子１２と同じ体積の被測
定場９の抵抗ＲはＲ＝ρs（d1＋2d2）／Ｓとなり、
複合光学素子１２が被測定場９の電界に影響を与
えないようにするためには、上記RpとＲとを等
しくすればよいので、ρn・d1＋2ρtd2＝ρs（d1＋
2d2）の関係式を成立させねばならない。したが
つて誘電体１１の厚さd2はd2＝（ρn−ρs）d1／２
（ρs−ρt）であればよいことになる。上記d2の値
は上記RpとＲとを等しくする値であるが、Cpの
値がＣの値にわずかでも近付けば、電界の歪みが
改善される効果がある。 On the other hand, the resistance R of the field to be measured 9 having the same volume as this composite optical element 12 is R=ρs(d 1 +2d 2 )/S,
In order to prevent the composite optical element 12 from affecting the electric field of the field to be measured 9, it is sufficient to make the above Rp and R equal, so ρn・d 1 +2ρtd 2 =ρs(d 1 +
2d 2 ) must hold true. Therefore, the thickness d 2 of the dielectric 11 is d 2 =(ρn−ρs)d 1 /2
(ρs−ρt) is sufficient. The value of d 2 is a value that makes Rp and R equal to each other, but if the value of Cp approaches the value of C even slightly, it has the effect of improving the distortion of the electric field.
なお、以上の実施例では、ポツケルス素子と誘
電体とを積層した複合光学素子を示したが、第４
図に示されるこの発明の他の実施例のように誘電
体１１の中にポツケルス素子１０を埋設すれば、
積層した場合の側端部の電界の歪みを防ぐことが
できるので、より正確な電界の測定が可能とな
る。 In addition, in the above embodiment, a composite optical element in which a Pockels element and a dielectric were laminated was shown, but the fourth embodiment
If the Pockels element 10 is embedded in the dielectric 11 as in the other embodiment of the invention shown in the figure,
Since distortion of the electric field at the side edges when stacked can be prevented, more accurate electric field measurement is possible.
また、第５図に示されるこの発明の別の他の実
施例のように、光学素子１０と誘電体１１とが別
体となり、光学素子１１と誘電体との間に媒体が
満たされている場合でも、光学素子１０による電
界の歪みを減少できる。 Further, as in another embodiment of the present invention shown in FIG. 5, the optical element 10 and the dielectric 11 are separate bodies, and a medium is filled between the optical element 11 and the dielectric. Even in this case, the distortion of the electric field caused by the optical element 10 can be reduced.
以上述べたように、この発明によれば、直流電
界測定装置において、光学素子との組み合せの体
積抵抗率を被測定場内の媒体の誘電率に近付ける
誘電体を被測定場内に設けているので、光学素子
による被測定場内の直流電界の歪みを減少させて
より正確な直流電界の測定ができる効果がある。 As described above, according to the present invention, in the DC electric field measurement device, a dielectric material is provided in the field to be measured that brings the volume resistivity of the combination with the optical element close to the permittivity of the medium in the field to be measured. This has the effect of reducing the distortion of the DC electric field in the field to be measured due to the optical element, thereby enabling more accurate measurement of the DC electric field.
第１図は電界測定の従来例を示す略斜視図、第
２図はこの発明の一実施例を示す原理図、第３図
は第２図に用いる光学素子の斜視図、第４図はこ
の発明の他の実施例に用いる光学素子の斜視図、
第５図はこの発明の別の他の実施例を示す斜視図
である。
図において、９は被測定場、１０は光学素子、
１１は誘電体を示す。なお、図中、同一符号は同
一、または相当部分を示す。
Fig. 1 is a schematic perspective view showing a conventional example of electric field measurement, Fig. 2 is a principle diagram showing an embodiment of the present invention, Fig. 3 is a perspective view of an optical element used in Fig. 2, and Fig. 4 is a perspective view of this example. A perspective view of an optical element used in another embodiment of the invention,
FIG. 5 is a perspective view showing another embodiment of the invention. In the figure, 9 is a field to be measured, 10 is an optical element,
11 indicates a dielectric material. In addition, in the figures, the same reference numerals indicate the same or equivalent parts.
Claims (1)
電気光学効果を有した光学素子によつて電界を測
定する直流電界測定装置において、上記光学素子
との組み合せの体積抵抗率を上記媒体の体積抵抗
率に近付ける誘電体を、上記被測定場内に設けた
ことを特徴とする直流電界測定装置。 ２ 誘電体は光学素子を電界に直角な方向の両側
から挾むように一対的に設けられていることを特
徴とする特許請求の範囲第１項記載の直流電界測
定装置。 ３ 光学素子は誘電体内部に埋設されていること
を特徴とする特許請求の範囲第１項記載の直流電
界測定装置。[Scope of Claims] 1. In a DC electric field measuring device that measures an electric field by an optical element having an electro-optic effect provided in a field medium (including vacuum) to be measured, the volume resistance of the combination with the optical element is A direct current electric field measurement device characterized in that a dielectric material whose resistivity approaches the volume resistivity of the medium is provided in the field to be measured. 2. The DC electric field measurement device according to claim 1, wherein the dielectric material is provided in a pair so as to sandwich the optical element from both sides in a direction perpendicular to the electric field. 3. The DC electric field measuring device according to claim 1, wherein the optical element is embedded within a dielectric material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56211972A JPS58113765A (en) | 1981-12-26 | 1981-12-26 | Direct current electric field measuring device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56211972A JPS58113765A (en) | 1981-12-26 | 1981-12-26 | Direct current electric field measuring device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS58113765A JPS58113765A (en) | 1983-07-06 |
| JPH021269B2 true JPH021269B2 (en) | 1990-01-10 |
Family
ID=16614752
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56211972A Granted JPS58113765A (en) | 1981-12-26 | 1981-12-26 | Direct current electric field measuring device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58113765A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0763803A (en) * | 1993-08-30 | 1995-03-10 | Stanley Electric Co Ltd | Non-contact surface electrometer |
-
1981
- 1981-12-26 JP JP56211972A patent/JPS58113765A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS58113765A (en) | 1983-07-06 |
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