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JPH0217300B2 - - Google Patents
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JPH0217300B2 - - Google Patents

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Publication number
JPH0217300B2
JPH0217300B2 JP60005787A JP578785A JPH0217300B2 JP H0217300 B2 JPH0217300 B2 JP H0217300B2 JP 60005787 A JP60005787 A JP 60005787A JP 578785 A JP578785 A JP 578785A JP H0217300 B2 JPH0217300 B2 JP H0217300B2
Authority
JP
Japan
Prior art keywords
semiconductor wafer
water
chuck mechanism
transfer arm
ultra
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP60005787A
Other languages
Japanese (ja)
Other versions
JPS61168438A (en
Inventor
Kazuo Kobayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shibayama Kikai Co Ltd
Original Assignee
Shibayama Kikai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shibayama Kikai Co Ltd filed Critical Shibayama Kikai Co Ltd
Priority to JP60005787A priority Critical patent/JPS61168438A/en
Publication of JPS61168438A publication Critical patent/JPS61168438A/en
Publication of JPH0217300B2 publication Critical patent/JPH0217300B2/ja
Granted legal-status Critical Current

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  • Jigs For Machine Tools (AREA)
  • Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)

Description

【発明の詳細な説明】 〔技術分野〕 本発明は研削盤等のチヤツク機構において、該
チヤツク機構から脆性で極薄の半導体ウエハを取
外す方法に関するものである。
DETAILED DESCRIPTION OF THE INVENTION [Technical Field] The present invention relates to a method for removing a brittle and extremely thin semiconductor wafer from a chuck mechanism such as a grinding machine.

〔発明の背景〕[Background of the invention]

本発明に係るこの種の半導体ウエハにおいて
は、コンピユータ等の電子関連機器、所謂OA機
器等の集積回路に使用されており、その開発は
日々進歩しており機器そのものの小型化に伴う、
より極薄で、より超高精度の質性と、作業性の観
点からより一層の拡径化が要求されてきている。
This type of semiconductor wafer according to the present invention is used in integrated circuits of electronic related equipment such as computers, so-called OA equipment, etc., and the development thereof is progressing day by day, and as the equipment itself becomes smaller,
From the viewpoint of ultra-thinness, ultra-high precision quality, and workability, there is a demand for further diameter expansion.

〔従来技術とその問題点〕[Prior art and its problems]

従来の研削盤等のバキユーム吸着機能を有する
チヤツク機構においては、先ず、半導体ウエハを
バキユーム吸着し研削加工を施して、研削加工後
にバキユーム吸着を開放し、エアーを逆送して半
導体ウエハを浮上さるようにして吸着パツトで吸
着し移送アームを上昇させることによつて剥がし
ているが、エアーの噴流のみでは乗載台等の上面
に付着する研削屑等の微粒異物は充分に除去でき
ず、乗載台の上面に残留したままであり、通常の
厚みの半導体ウエハであれば多少の微粒異物が残
留したままバキユーム吸着させても半導体ウエハ
の上面が歪んだり破損したりする等の問題点は殆
ど発生しなかつた。
In a chuck mechanism with a vacuum suction function such as a conventional grinder, the semiconductor wafer is first vacuum suctioned and ground, and after the grinding process, the vacuum suction is released and air is sent back to float the semiconductor wafer. However, air jets alone cannot sufficiently remove fine particles such as grinding debris that adhere to the top surface of the platform, etc. They remain on the top surface of the mounting table, and if the semiconductor wafer is of normal thickness, there will be almost no problems such as distortion or damage to the top surface of the semiconductor wafer even if some fine particles remain and are vacuum-adsorbed. It did not occur.

然し乍ら、昨今要求されている極薄の半導体ウ
エハではチヤツク機構の乗載台の上面に研削屑等
の微粒異物が僅かに残留していてもバキユーム吸
着すると脆性で極薄の半導体ウエハは折損した
り、半導体ウエハそのものが微粒異物によつて歪
んで研削加工する上面の平坦精度がでなかつた
り、又、研削後の鏡面仕上された半導体ウエハの
上面を吸着パツトで吸着しチヤツク機構の上面か
ら剥がす場合もチヤツク機構の上面に付着してい
る液体の表面張力による吸着作用によつて、半導
体ウエハの損傷が頻繁に発生し、しかも高速度回
転で研削加工するので摩擦熱による半導体ウエハ
へのダメージが引き起こされる等の諸問題が出て
きている。
However, with the ultra-thin semiconductor wafers that are in demand these days, even if there is a slight amount of grinding debris or other fine particles remaining on the top surface of the chuck mechanism's mounting table, the ultra-thin semiconductor wafers are brittle and may break if vacuum suction is applied. When the semiconductor wafer itself is distorted by fine particles and the top surface to be ground cannot be flat, or when the mirror-finished top surface of the semiconductor wafer after grinding is picked up by a suction pad and peeled off from the top surface of the chuck mechanism. Semiconductor wafers are frequently damaged due to the surface tension of the liquid adhering to the top surface of the chuck mechanism, and since grinding is performed at high speeds, damage to semiconductor wafers is caused by frictional heat. Various problems have arisen, such as:

その為に研削加工後にその都度別の洗浄装置で
洗浄する方法も取られているが時間的なロスが大
きいものであつた。
For this reason, a method has been adopted in which a separate cleaning device is used for cleaning each time after each grinding process, but this involves a large loss of time.

〔発明の目的〕[Purpose of the invention]

本発明は上記の事由に鑑みて鋭意研鑚の結果、
これらのチヤツク機構の間〓部へ一時的に噴流す
る水を滞溜させ、静止状態の水の表面張力を破壊
する水量の水を有孔物質から成る乗載台を浸透さ
せ上面に噴流させて、半導体ウエハの下面全体を
均等に浮上させながら、移送アームの先端部に備
えた吸着パツトで吸着させ移送アームを水平方向
へ若干ずらせて上昇させ取外す方法を提供する目
的である。
The present invention was developed as a result of intensive research in view of the above reasons.
The jetting water is temporarily accumulated between these chuck mechanisms, and the amount of water that destroys the surface tension of the static water penetrates the platform made of porous material and is jetted onto the top surface. The object of the present invention is to provide a method for removing a semiconductor wafer by causing the entire lower surface of the semiconductor wafer to float evenly, attracting the semiconductor wafer with a suction pad provided at the tip of the transfer arm, and raising the transfer arm by slightly shifting the transfer arm in the horizontal direction.

〔発明の実施例〕[Embodiments of the invention]

斯る目的を達成した本発明の研削盤等のチヤツ
ク機構における半導体ウエハの取外し方法の実施
例を以下図面を用いて説明する。
An embodiment of the method for removing a semiconductor wafer in a chuck mechanism of a grinding machine or the like according to the present invention, which achieves the above object, will be described below with reference to the drawings.

第1図は本発明の実施による研削盤等のチヤツ
ク機構本体の一部分を構成要部を現した概要説明
図であつて、第2図は水流によつて半導体ウエハ
の浮上させた状態を現した概要説明図であり、第
3図は移送アームの吸着パツトで吸着させた状態
の説明図であり、第4図は移送アームによつて水
平方向へ若干ずらした説明図である。
FIG. 1 is a schematic explanatory diagram showing the main components of a part of the main body of a chuck mechanism of a grinding machine or the like according to the present invention, and FIG. 2 shows a state in which a semiconductor wafer is levitated by a water flow. FIG. 3 is an explanatory diagram showing a state in which the suction pad of the transfer arm is used to adsorb the product, and FIG. 4 is an explanatory diagram showing the product being slightly shifted in the horizontal direction by the transfer arm.

本発明は研削盤等のチヤツク機構1において、
該チヤツク機構1から脆性で極薄の半導体ウエハ
Aを取外す方法に関して、チヤツク機構1の上方
辺へ先端部7に吸着パツト8を備え水平方向へ回
動且つ進退可能な移送アーム6を昇降自在に設け
ると共に、該チヤツク機構1へは円筒状の陥部2
を形設し、該陥部2の底面に間〓部5を設けて有
孔物質から成る円盤状の乗載台4を回転自在に軸
承固定し、該軸の中心部を貫通する排気口兼注水
口3を設けた極薄の半導体ウエハAを研削加工す
るためにバキユーム吸着機能を有するチヤツク機
構1を用いて、前記乗載台4へ載置された研削加
工後の極薄の半導体ウエハAのバキユーム吸着を
解除すると同時に前記注水口4より水を噴流させ
て間〓部5へ一時的に滞溜させ、該乗載台4の上
面へ静止状態でできる水層の表面張力を破壊する
水量の水を有孔物質から成る乗載台4を浸透さ
せ、該乗載台4の上面に噴流して半導体ウエハA
の下面全体を均等に浮上させながら、移送アーム
6の先端部7に備えた吸着パツト8で吸着させ移
送アーム6を水平方向に若干ずらせて上昇させて
半導体ウエハAを取外す方法である。
The present invention provides a chuck mechanism 1 of a grinding machine etc.
Regarding the method of removing the brittle and ultra-thin semiconductor wafer A from the chuck mechanism 1, a transfer arm 6 having a suction pad 8 at the tip 7 and capable of rotating horizontally and moving back and forth is moved up and down on the upper side of the chuck mechanism 1. At the same time, the chuck mechanism 1 is provided with a cylindrical recess 2.
A spacer 5 is provided at the bottom of the recess 2, and a disk-shaped platform 4 made of a porous material is rotatably fixed to the shaft, and an exhaust port passing through the center of the shaft is provided. The chuck mechanism 1 having a vacuum suction function is used to grind the ultra-thin semiconductor wafer A provided with the water inlet 3, and the ultra-thin semiconductor wafer A after the grinding process is placed on the mounting table 4. At the same time as the vacuum adsorption of the water is released, water is jetted from the water inlet 4 to temporarily accumulate in the spacer 5, and the amount of water is enough to destroy the surface tension of the water layer that forms on the top surface of the platform 4 in a static state. The water permeates the mounting table 4 made of a porous material and is jetted onto the upper surface of the mounting table 4 to remove the semiconductor wafer A.
In this method, the semiconductor wafer A is removed by causing the entire lower surface of the semiconductor wafer A to float evenly and attracting it with a suction pad 8 provided at the tip 7 of the transfer arm 6, and then raising the transfer arm 6 while slightly shifting it in the horizontal direction.

即ち、本発明を実施する装置は、第1図に図示
の如く、研削盤等のチヤツク機構本体1へは円筒
状で平坦な底面を有する陥部2を形設し、該陥部
2の底面とポーラス状セラミツク等の有孔物質か
ら成る円盤状の乗載台4の下面との間に適宜な容
積を有する間〓部5を設けて乗載台4を段部を形
成する手段等によつて回転自在に軸承固定し、該
軸の中心部を貫通する排気口兼注水口3を設け、
該排気口兼注水口3はチヤツク機構1を貫いて真
空ポンプ及び送水ポンプと接続されているもの
で、真空ポンプを可動させて負荷をかけ極薄の半
導体ウエハAをバキユーム吸着機能を有するチヤ
ツク機構1と、該チヤツク機構1の上方辺へ先端
部7に吸着パツト8を備えた水平方向へ回動且つ
進退可能な移送アーム6を昇降自在に設けた装置
を用いて実施するものである。
That is, as shown in FIG. 1, the apparatus for carrying out the present invention has a chuck mechanism main body 1 of a grinding machine or the like formed with a recess 2 having a cylindrical shape and a flat bottom. A gap portion 5 having an appropriate volume is provided between the lower surface of the disk-shaped platform 4 made of a porous material such as porous ceramic, and the platform 4 is formed by means of forming a step. The shaft is rotatably fixed on a shaft, and an exhaust port and water inlet 3 is provided passing through the center of the shaft.
The exhaust port/water inlet 3 is connected to a vacuum pump and a water pump through the chuck mechanism 1, and the chuck mechanism has the function of vacuum suctioning the ultra-thin semiconductor wafer A by moving the vacuum pump and applying a load. 1, and a transfer arm 6 provided on the upper side of the chuck mechanism 1 with a suction pad 8 at its tip 7 and capable of rotating in the horizontal direction and moving back and forth in the horizontal direction.

前記乗載台4へ載置された研削加工後の極薄の
半導体ウエハAのバキユーム吸着を解除すると同
時に、前記排気口兼注水口3より送水ポンプを可
動させて水を噴流させると、水は容積を有する間
〓部5へ一時的に滞溜するものであり、更に送水
を続けると水は該間〓部5を満たし一気に多量の
水がポーラス状セラミツク等の有孔物質から成る
乗載台4を浸透させ上面に噴流させるもので、該
乗載台4の上面へ静止状態でできる水層の表面張
力を破壊させるに充分な水量を噴流させるもので
あり、半導体ウエハAの下面全体を該水量によつ
て均等に浮上させながら、加えて、移送アーム6
の先端部7に備えた吸着パツト8で吸着させ水平
方向に若干ずらせて移送アーム6を上昇させるこ
とによつて、更に、表面張力による吸着作用を弱
めて取外すもので、該極薄の半導体ウエハAの破
損を無く取外せると共に、半導体ウエハAの下面
と乗載台4等のチヤツク機構1の上面とを水量に
よつて洗い流し洗浄すると同時に研削による摩擦
熱を冷却させるものである。
When the vacuum suction of the ultra-thin semiconductor wafer A placed on the mounting table 4 after grinding is released, and at the same time, the water pump is operated to jet water from the exhaust port/water inlet 3, the water is discharged. While the water has a certain volume, it temporarily accumulates in the bottom part 5, and when water continues to be fed, the water fills the bottom part 5, and a large amount of water suddenly accumulates on the platform made of a porous material such as porous ceramic. 4 is permeated into the upper surface of the mounting table 4, and a sufficient amount of water is jetted to break the surface tension of the water layer formed in a stationary state on the upper surface of the mounting table 4, and the entire lower surface of the semiconductor wafer A is jetted. While floating evenly depending on the amount of water, in addition, the transfer arm 6
The ultra-thin semiconductor wafer is removed by adsorbing it with a suction pad 8 provided at the tip 7 of the semiconductor wafer, and then moving it slightly horizontally and raising the transfer arm 6 to further weaken the suction effect caused by surface tension. The semiconductor wafer A can be removed without damage, and the lower surface of the semiconductor wafer A and the upper surface of the chuck mechanism 1, such as the mounting table 4, are washed and cleaned with a large amount of water, and at the same time, the frictional heat caused by the grinding is cooled down.

この様にして静止状態でできる水層の表面張力
を破壊させるに充分な水量を噴流させることと、
移送アーム6によつて水平方向へ若干ずらせて取
外すのことにより液体による吸着作用の影響を殆
ど受けず、安全確実に半導体ウエハAを取外すこ
とができ、且つ、時間的なロスをすることがな
く、加えて、水流によつて洗浄され、更に、研削
することにより引き起こされる摩擦熱を蓄えるこ
となく冷却させる取外し方法であつて、取外した
半導体ウエハAを別のシステム装置へ移送した
後、次の未研削の半導体ウエハAは効率よく充分
に洗浄され、摩擦熱も解除されたチヤツク機構1
の上面へバキユーム吸着され、順次研削すること
ができるものである。
In this way, a sufficient amount of water is jetted to destroy the surface tension of the water layer formed in a stationary state,
By slightly shifting the wafer A in the horizontal direction and removing it using the transfer arm 6, the semiconductor wafer A can be removed safely and reliably without being affected by the adsorption effect of the liquid, and without wasting time. In addition, this is a removal method in which the removed semiconductor wafer A is cleaned by a water stream and further cooled without storing frictional heat caused by grinding, and after the removed semiconductor wafer A is transferred to another system device, the following steps are performed. The unground semiconductor wafer A is efficiently and thoroughly cleaned, and the frictional heat is removed from the chuck mechanism 1.
The vacuum suction is applied to the upper surface of the material, and the material can be sequentially ground.

〔発明の効果〕〔Effect of the invention〕

以上の如く、本発明は時間的ロスをすることな
く研削後の半導体ウエハ鏡面に何等障害を及ぼさ
ずに取外しができるだけでなく、半導体ウエハの
下面及びチヤツク機構の上面の洗浄を行い、合わ
せて研削による摩擦熱を冷却できるものであつ
て、其の貢献性は計り知れないものがあり、極め
て有意義な効果を奏するものである。
As described above, the present invention not only enables removal of the semiconductor wafer after grinding without wasting time and without causing any damage to the mirror surface of the semiconductor wafer, but also cleans the bottom surface of the semiconductor wafer and the top surface of the chuck mechanism, and then grinds the semiconductor wafer at the same time. Its contribution is immeasurable, and it has extremely significant effects.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明の実施による研削盤等のチヤツ
ク機構本体の一部分の構成要部を現した概要説明
図である。第2図は水流によつて半導体ウエハの
浮上させた状態を現した概要説明図である。第3
図は移送アームの吸着パツトで吸着させた状態の
説明図である。第4図は移送アームによつて若干
水平方向へずらした説明図である。 A…半導体ウエハ。1…チヤツク機構、2…陥
部、3…排気口兼注水口、4…乗載台、5…間〓
部、6…移送アーム、7…先端部、8…吸着パツ
ト。
FIG. 1 is a schematic explanatory diagram showing the main components of a part of a chuck mechanism main body of a grinding machine or the like according to the present invention. FIG. 2 is a schematic explanatory diagram showing a state in which a semiconductor wafer is levitated by a water flow. Third
The figure is an explanatory diagram of a state in which the suction pad of the transfer arm is suctioned. FIG. 4 is an explanatory view of the device slightly shifted horizontally by the transfer arm. A...Semiconductor wafer. 1...chuck mechanism, 2...recess, 3...exhaust port and water inlet, 4...mounting platform, 5...space〓
Part, 6... Transfer arm, 7... Tip part, 8... Suction part.

Claims (1)

【特許請求の範囲】 1 チヤツク機構の上方辺へ先端部に吸着パツト
を備え水平方向へ回動且つ進退可能な移送アーム
を昇降自在に設けると共に、該チヤツク機構へは
円筒状の陥部を形設し、該陥部の底面に間〓部を
設けて有孔物質から成る円盤状の乗載台を回転自
在に軸承固定し、該軸の中心部を貫通する排気口
兼注水口を設けた極薄の半導体ウエハを研削加工
するためにバキユーム吸着機能を有するチヤツク
機構を用いて、 前記乗載台へ載置された研削加工後の極薄の半
導体ウエハのバキユーム吸着を解除すると同時に
前記注水口より水を噴流させて間〓部へ一時的に
滞溜させ、該乗載台の上面へ静止状態でできる水
層の表面張力を破壊する水量の水を有孔物質から
成る乗載台を浸透させ、該乗載台の上面に噴流し
て半導体ウエハの下面全体を均等に浮上させなが
ら、前記移送アームの先端部に備えた吸着パツト
で吸着させ移送アームを水平方向に若干ずらせて
上昇させ取外すことを特徴とするチヤツク機構に
おける半導体ウエハの取外し方法。
[Scope of Claims] 1. A transfer arm is provided on the upper side of the chuck mechanism that has a suction pad at its tip and can rotate horizontally and move forward and backward, and is movable up and down, and the chuck mechanism is provided with a cylindrical recess. A space was provided at the bottom of the recess to rotatably fix a disc-shaped platform made of a perforated material on a shaft, and an exhaust port and water inlet was provided passing through the center of the shaft. In order to grind an ultra-thin semiconductor wafer, a chuck mechanism having a vacuum suction function is used to release the vacuum suction of the ultra-thin semiconductor wafer placed on the mounting table after grinding, and at the same time open the water inlet. A jet of water is made to temporarily accumulate in the gap, and an amount of water that breaks the surface tension of the water layer that forms on the top surface of the platform in a static state penetrates the platform made of porous material. Then, the entire lower surface of the semiconductor wafer is evenly floated by a jet on the top surface of the mounting table, and the semiconductor wafer is adsorbed by the suction pad provided at the tip of the transfer arm, and the transfer arm is slightly shifted horizontally and raised to remove it. A method for removing a semiconductor wafer from a chuck mechanism, characterized in that:
JP60005787A 1985-01-18 1985-01-18 Method for removing semiconductor wafer in chuck mechanism Granted JPS61168438A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP60005787A JPS61168438A (en) 1985-01-18 1985-01-18 Method for removing semiconductor wafer in chuck mechanism

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP60005787A JPS61168438A (en) 1985-01-18 1985-01-18 Method for removing semiconductor wafer in chuck mechanism

Publications (2)

Publication Number Publication Date
JPS61168438A JPS61168438A (en) 1986-07-30
JPH0217300B2 true JPH0217300B2 (en) 1990-04-20

Family

ID=11620809

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60005787A Granted JPS61168438A (en) 1985-01-18 1985-01-18 Method for removing semiconductor wafer in chuck mechanism

Country Status (1)

Country Link
JP (1) JPS61168438A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005059173A (en) * 2003-08-18 2005-03-10 Yoshioka Seiko:Kk Suction device and chuck table

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
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Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5840338U (en) * 1981-09-11 1983-03-16 日立精工株式会社 Vacuum suction device for wafer grinder

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005059173A (en) * 2003-08-18 2005-03-10 Yoshioka Seiko:Kk Suction device and chuck table

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Publication number Publication date
JPS61168438A (en) 1986-07-30

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