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JPH0582053B2 - - Google Patents
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JPH0582053B2 - - Google Patents

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Publication number
JPH0582053B2
JPH0582053B2 JP25713989A JP25713989A JPH0582053B2 JP H0582053 B2 JPH0582053 B2 JP H0582053B2 JP 25713989 A JP25713989 A JP 25713989A JP 25713989 A JP25713989 A JP 25713989A JP H0582053 B2 JPH0582053 B2 JP H0582053B2
Authority
JP
Japan
Prior art keywords
semiconductor wafer
chuck mechanism
water
transfer arm
porous material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP25713989A
Other languages
Japanese (ja)
Other versions
JPH03120718A (en
Inventor
Kazuo Kobayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shibayama Kikai Co Ltd
Original Assignee
Shibayama Kikai Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shibayama Kikai Co Ltd filed Critical Shibayama Kikai Co Ltd
Priority to JP25713989A priority Critical patent/JPH03120718A/en
Publication of JPH03120718A publication Critical patent/JPH03120718A/en
Publication of JPH0582053B2 publication Critical patent/JPH0582053B2/ja
Granted legal-status Critical Current

Links

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  • Mechanical Treatment Of Semiconductor (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Description

【発明の詳細な説明】 〔技術分野〕 本発明は研削盤等のチヤツク機構において、該
チヤツク機構から脆性で極薄の半導体ウエハを取
外す方法に関するものである。
DETAILED DESCRIPTION OF THE INVENTION [Technical Field] The present invention relates to a method for removing a brittle and extremely thin semiconductor wafer from a chuck mechanism such as a grinding machine.

〔発明の背景〕[Background of the invention]

本発明に係るこの種の半導体ウエハにおいて
は、コンピユータ等の電子関連機器、所謂OA機
器等の集積回路に使用されており、その開発は
日々進歩しており機器そのものの小型化に伴う、
より極薄で、より超高精度の質性と、作業性の観
点からより一層の拡径化が要求されてきている。
This type of semiconductor wafer according to the present invention is used in integrated circuits of electronic related equipment such as computers, so-called OA equipment, etc., and the development thereof is progressing day by day, and as the equipment itself becomes smaller,
From the viewpoint of ultra-thinness, ultra-high precision quality, and workability, there is a demand for further diameter expansion.

〔従来技術とその問題点〕[Prior art and its problems]

従来の研削盤等のバキユーム吸着機能を有する
チヤツク機構の有孔物質から成る乗載台において
は、先ず、半導体ウエハをバキユーム吸着して研
削加工を施し、研削加工後にバキユーム吸着を開
放し、エアーを逆送して半導体ウエハを浮上させ
るようにして吸着パツトで吸着し移送アームを上
昇させることによつて剥がしているが、エアーの
噴流のみでは乗載台の上面等に付着する研削屑等
の微粒異物は充分に除去できず、乗載台等の上面
に残留したままであり、通常の厚みの半導体ウエ
ハであれば多少の微粒異物が残留したままバキユ
ーム吸着させても半導体ウエハの上面が歪んだり
破損したりする等の問題点は発生しなかつた。
In a conventional mounting platform made of a perforated material with a chuck mechanism that has a vacuum suction function, such as a conventional grinder, the semiconductor wafer is first vacuum suctioned and ground, and after the grinding process, the vacuum suction is released and air is released. The semiconductor wafer is transported backwards and floated, and the suction pad adsorbs it, lifting the transfer arm to peel it off. Foreign matter cannot be removed sufficiently and remains on the top surface of the mounting table, etc. If the semiconductor wafer is of normal thickness, some fine foreign matter remains and the top surface of the semiconductor wafer may be distorted even if vacuum suction is applied. No problems such as damage occurred.

然し乍ら、昨今要求されている極薄の半導体ウ
エハではチヤツク機構の乗載台の上面に研削屑等
の微粒異物が僅かに残留していてもバキユーム吸
着すると脆性で極薄の半導体ウエハは折損した
り、半導体ウエハそのものが微粒異物によつて歪
んで研削加工する上面の平坦精度がでなかつた
り、又、研削後の鏡面仕上された半導体ウエハの
上面を吸着パツトで吸着しチヤツク機構の上面か
ら剥がす場合もチヤツク機構の上面に着している
液体の表面張力による吸着作用によつて、半導体
ウエハの損傷が頻繁に発生し、しかも高速度回転
で研削加工するので摩擦熱による半導体ウエハへ
のダメージが引き起こされる等の諸問題が出てき
ている。
However, with the ultra-thin semiconductor wafers that are in demand these days, even if there is a slight amount of grinding debris or other fine particles remaining on the top surface of the chuck mechanism's mounting table, the ultra-thin semiconductor wafers are brittle and may break if vacuum suction is applied. When the semiconductor wafer itself is distorted by fine particles and the top surface to be ground cannot be flat, or when the mirror-finished top surface of the semiconductor wafer after grinding is picked up by a suction pad and peeled off from the top surface of the chuck mechanism. Semiconductor wafers are frequently damaged due to the suction effect caused by the surface tension of the liquid that adheres to the top surface of the chuck mechanism.Furthermore, since grinding is performed at high speed rotation, damage to semiconductor wafers is caused by frictional heat. Various problems have arisen, such as:

その為に研削加工後にその都度別の洗浄装置で
洗浄する方法も取られているが時間的なロスが大
きいものであつた。
For this reason, a method has been adopted in which a separate cleaning device is used for cleaning each time after each grinding process, but this involves a large loss of time.

〔発明の目的〕[Purpose of the invention]

本発明は上記の事由に鑑みて鋭意研鑽の結果、
これらのチヤツク機構の間〓部へ一時的に多量の
微粒気泡を含有する水を滞溜させ、静止状態の水
の表面張力を破壊する多量の微粒気泡を含有する
水を有孔物質から成る乗載台を浸透させ上面に噴
流させて、半導体ウエハの下面全体を均等に浮上
させながら、移送アームに備えた吸着パツト吸着
させ移送アームを上昇させて取外す方法を提供す
る目的である。
The present invention was developed as a result of intensive research in view of the above reasons.
Water containing a large amount of microbubbles is temporarily accumulated in the space between these chuck mechanisms, and the water containing a large amount of microbubbles is transferred to a tube made of a porous material that destroys the surface tension of water in a stationary state. It is an object of the present invention to provide a method for removing a semiconductor wafer by causing a suction pad provided on a transfer arm to attract the semiconductor wafer while uniformly floating the entire lower surface of the semiconductor wafer by permeating the mounting table and causing a jet to flow onto the upper surface of the wafer, thereby raising the transfer arm.

〔発明の実施例〕[Embodiments of the invention]

斯る目的を達成した本発明の研削盤等のチヤツ
ク機構における半導体ウエハの取外し方法の実施
例を以下図面を用いて説明する。
An embodiment of the method for removing a semiconductor wafer in a chuck mechanism of a grinding machine or the like according to the present invention, which achieves the above object, will be described below with reference to the drawings.

第1図は本発明の実施による研削盤等のチヤツ
ク機構本体の一部分の構成要部を現した概要説明
図であつて、第2図は多量の微粒気泡を含有する
水の水洗によつて半導体ウエハの浮上した状態を
現した概要説明図である。
FIG. 1 is a schematic explanatory diagram showing the main components of a part of the main body of a chuck mechanism of a grinding machine or the like according to the present invention, and FIG. FIG. 2 is a schematic explanatory diagram showing a floating state of a wafer.

本発明は研削盤等のチヤツク機構1において、
該チヤツク機構1から脆性で極薄の半導体ウエハ
Aを取外す方法に関して、チヤツク機構1の上方
辺へ先端に吸着パツト備えた移送アームを昇降自
在に設けると共に、該チヤツク機構1へは円筒状
の陥部2を形設し、該陥部2の底面に間〓部5を
設けて有孔物質から成る円盤状の状載台4を回転
自在に軸承固定し、該軸の中心部を貫通する排気
口兼注水口3を設けた極薄の半導体ウエハAを研
削加工するためにバキユーム吸着機能を有するチ
ヤツク機構1を用いて、前記乗載台4へ載置され
た研削加工後の極薄の半導体ウエハAのバキユー
ム吸着を解除すると同時に前記排気口兼注水口3
より多量の微粒気泡を含有する水を噴流させて間
〓部5へ一時的に滞溜させ、該乗載台4の上面へ
静止状態でできる水層の表面張力を破壊する多量
の微粒気泡を含有する水を有孔物質から成る乗載
台4を浸透させ、該乗載台4の上面に噴流して半
導体ウエハAの下面全体を均等に浮上させなが
ら、移送アームに備えた吸着パツトで吸着させ移
送アームを上昇させて取外す方法である。
The present invention provides a chuck mechanism 1 of a grinding machine etc.
Regarding the method for removing the brittle and ultra-thin semiconductor wafer A from the chuck mechanism 1, a transfer arm equipped with a suction pad at the tip is provided on the upper side of the chuck mechanism 1 so as to be able to move up and down, and a cylindrical recess is attached to the chuck mechanism 1. A spacer 5 is provided on the bottom surface of the recessed part 2, and a disc-shaped platform 4 made of a porous material is rotatably fixed on the shaft, and an exhaust gas is provided through the center of the shaft. In order to grind an ultra-thin semiconductor wafer A provided with a spout/water inlet 3, the chuck mechanism 1 having a vacuum suction function is used to place the ultra-thin semiconductor wafer A after grinding on the mounting table 4. At the same time as releasing the vacuum adsorption of wafer A, the exhaust port/water inlet 3
A jet of water containing a larger amount of fine air bubbles is caused to temporarily accumulate in the intermediate portion 5, and a large amount of fine air bubbles are generated on the upper surface of the platform 4, destroying the surface tension of the water layer formed in a static state. The contained water permeates the mounting table 4 made of a porous material, and is jetted onto the upper surface of the mounting table 4 to evenly levitate the entire lower surface of the semiconductor wafer A, while being sucked by a suction pad provided on the transfer arm. In this method, the transfer arm is removed by lifting the transfer arm.

即ち、本発明を実施する装置は、第1図に図示
の如く、研削盤等のチヤツク機構本体1へは円筒
状で平坦な底面を有する陥部2を形設し、該陥部
2の底面とポーラス状セラミツク等の有孔物質か
ら成る乗載台4の下面との間に適宜な容積を有す
る間〓部5を設けて円盤状の該乗載台4を段部を
形成する手段等によつて回転自在に軸承固定し、
該軸の中心部を貫通する排気口兼注水口3を設
け、該排気口兼注水口3はチヤツク機構1を貫い
て真空ポンプ及び送水ポンプと接続されているも
ので、真空ポンプを可動させて負荷をかけ極薄の
半導体ウエハAをバキユーム吸着機能を有するチ
ヤツク機構1と、該チヤツク機構1の上方辺へ先
端に吸着パツトを備えた移送アーム(図示しな
い)を昇降自在に設けた装置を用いて実施するも
のである。
That is, as shown in FIG. 1, the apparatus for carrying out the present invention has a chuck mechanism main body 1 of a grinding machine or the like formed with a recess 2 having a cylindrical shape and a flat bottom. A spacer portion 5 having an appropriate volume is provided between the lower surface of the platform 4 made of a porous material such as porous ceramic, and the disk-shaped platform 4 is used as a means for forming a stepped portion. Therefore, the bearing is fixed so that it can rotate freely,
An exhaust port/water inlet 3 is provided that passes through the center of the shaft, and the exhaust port/water inlet 3 passes through the chuck mechanism 1 and is connected to a vacuum pump and a water pump. A chuck mechanism 1 having a vacuum suction function for vacuum-chucking an ultra-thin semiconductor wafer A under a load, and a transfer arm (not shown) equipped with a suction pad at the tip on the upper side of the chuck mechanism 1 are used. This will be carried out in accordance with the above.

前記有孔物質から成る乗載台4へ載置された研
削加工後の極薄の半導体ウエハAのバキユーム吸
着を解除すると同時に、前記排気口兼注水口3よ
り送水ポンプを稼動させて多量の微粒気泡を含有
する水を噴流させると、該微粒気泡を含有する水
は容積を有する間〓部5へ一時的に滞溜するもの
であり、更に送水を続けると多量の微粒気泡を含
有する水は該間〓部5を満たし一気に多量の微粒
気泡を含有する水は有孔物質から成る乗載台4を
浸透させ上面に噴流させるもので、該乗載台4の
上面へ静止状態でできる水層の表面張力を破壊さ
せるに充分な多量の微粒気泡を含有するの水を噴
流させるものであり、該有孔物質から成る乗載台
4を浸透した多量の微粒気泡と噴流する充分な水
量の水とによつて表面張力を容易に破壊させるこ
とができ、加えて、半導体ウエハAの下面全体を
該微粒気泡と水によつて均等に浮上させながら、
移送アームに備た吸着パツトで吸着させ移送アー
ムを上昇させて取外すことによつて、該極薄の半
導体ウエハAの破損を無く取外せると共に、半導
体ウエハAの下面とチヤツク機構1の上面とを水
によつて洗い流し洗浄すると同時に研削による摩
擦熱を冷却させるものである。
At the same time, the vacuum suction of the ultra-thin semiconductor wafer A placed on the mounting table 4 made of a porous material after grinding is released, and at the same time, a water pump is operated from the exhaust port/water inlet 3 to remove a large amount of fine particles. When water containing air bubbles is jetted, the water containing fine air bubbles temporarily accumulates in the bottom part 5 while it has a volume, and when the water continues to be fed, the water containing a large amount of air bubbles remains. The water that fills the intermediate part 5 and contains a large amount of fine air bubbles at once permeates the platform 4 made of a porous material and is jetted onto the top surface of the platform 4, forming a static water layer on the top surface of the platform 4. This is a jet of water containing a sufficient amount of fine air bubbles to break the surface tension of the material, and the large amount of fine air bubbles that have permeated the platform 4 made of the porous material and a sufficient amount of water to jet out. The surface tension can be easily broken by this, and in addition, while the entire lower surface of the semiconductor wafer A is evenly floated by the fine bubbles and water,
By adsorbing it with a suction pad provided on the transfer arm and lifting the transfer arm to remove it, the ultra-thin semiconductor wafer A can be removed without damage, and the bottom surface of the semiconductor wafer A and the top surface of the chuck mechanism 1 can be removed. The water washes away the material and at the same time cools down the frictional heat caused by grinding.

この様にして静止状態でできる水層の表面張力
を容易に破壊させる多量の微粒気泡と充分な水量
の水を噴流させて取外すので、時間的なロスをす
ることなく安全確実に半導体ウエハAを取外すこ
とができ、且つ、チヤツク機構1及び乗載台4の
上面は水流によつて洗浄され、更に、研削するこ
とにより引き起こされる摩擦熱を蓄えることなく
冷却させる取外し方法であつて、取外した半導体
ウエハAを別のシステム装置へ移送した後、次の
未研削の半導体ウエハAは効率よく充分に洗浄さ
れ、摩擦熱も解消されたチヤツク機構1の上面へ
バキユーム吸着され、順次研削することができる
ものである。
In this way, the semiconductor wafer A is removed by jetting a large amount of fine bubbles and a sufficient amount of water to easily destroy the surface tension of the water layer that is formed in a static state, so the semiconductor wafer A is safely and reliably removed without any loss of time. This is a removal method in which the top surfaces of the chuck mechanism 1 and the mounting platform 4 are cleaned by a stream of water, and are cooled without accumulating frictional heat caused by grinding. After the wafer A is transferred to another system device, the next unground semiconductor wafer A is vacuum-adsorbed onto the upper surface of the chuck mechanism 1, which has been efficiently and sufficiently cleaned and freed from frictional heat, and can be sequentially ground. It is something.

〔発明の効果〕〔Effect of the invention〕

以上の如く、本発明は時間的ロスをすることな
く研削後の半導体ウエハ鏡面に何等障害を及ぼさ
ずに取外しができるだけでなく、半導体ウエハの
下面及びチヤツク機構の上面の洗浄を行い、合わ
せて研削による摩擦熱を冷却できるものであつ
て、其の貢献性は計り知れないものがあり、極め
て有意義な効果を奏するものである。
As described above, the present invention not only enables removal of the semiconductor wafer after grinding without wasting time and without causing any damage to the mirror surface of the semiconductor wafer, but also cleans the bottom surface of the semiconductor wafer and the top surface of the chuck mechanism, and then grinds the semiconductor wafer at the same time. Its contribution is immeasurable, and it has extremely significant effects.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明の実施による研削盤等のチヤツ
ク機構本体の一部分の構成要部を現した概要説明
図である。第2図は水流によつて半導体ウエハの
浮上した状態を現した概要説明図である。 A……半導体ウエハ。1……チヤツク機構、2
……陥部、3……排気口兼注水口、4……乗載
台、5……間〓部。
FIG. 1 is a schematic explanatory diagram showing the main components of a part of a chuck mechanism main body of a grinding machine or the like according to the present invention. FIG. 2 is a schematic explanatory diagram showing a state in which a semiconductor wafer is floated by a water flow. A...Semiconductor wafer. 1...Chuck mechanism, 2
... Recessed part, 3... Exhaust port/water inlet, 4... Mounting platform, 5... Interval part.

Claims (1)

【特許請求の範囲】 1 チヤツク機構の上方辺へ先端に吸着パツトを
備えた移送アームを昇降自在に設けると共に、該
チヤツク機構へは円筒状の陥部を形設し、該陥部
の底面に間〓部を設けて有孔物質から成る円盤状
の乗載台を回転自在に軸承固定し、該軸の中心部
を貫通する排気口兼注水口を設けた極薄の半導体
ウエハを研削加工するためにバキユーム吸着機能
を有するチヤツク機構を用いて、 前記乗載台へ載置された研削加工後の極薄の半
導体ウエハのバキユーム吸着を解除すると同時に
前記排気口兼注水口より多量の微粒気泡を含有す
る水を噴流させて間〓部へ一時的に滞溜させ、該
乗載台の上面へ静止状態でできる水層の表面張力
を破壊する多量の微粒気泡を含有する水を有孔物
質から成る乗載台を浸透させ、該乗載台の上面に
噴流して半導体ウエハの下面全体を均等に浮上さ
せながら、移送アームに備えた吸着パツトで吸着
させ移送アームを上昇させて取外すことを特徴と
するチヤツク機構における半導体ウエハの取外し
方法。
[Scope of Claims] 1. A transfer arm equipped with a suction pad at the tip is provided on the upper side of the chuck mechanism so as to be able to move up and down, and a cylindrical recess is formed in the chuck mechanism, and a cylindrical recess is formed on the bottom surface of the recess. A disk-shaped platform made of a porous material is rotatably fixed on a shaft with a space between the two, and an ultra-thin semiconductor wafer is ground with an exhaust port and water inlet passing through the center of the shaft. In order to do this, a chuck mechanism with a vacuum suction function is used to release the vacuum suction of the ultra-thin semiconductor wafer placed on the mounting table after grinding, and at the same time, a large amount of fine air bubbles are removed from the exhaust port/water inlet. Water contained in the porous material is jetted to temporarily accumulate in the space, and the water containing a large amount of microbubbles that destroys the surface tension of the water layer formed in a static state on the top surface of the platform is removed from the porous material. The semiconductor wafer is penetrated through the loading platform, and is jetted onto the upper surface of the loading platform to evenly levitate the entire lower surface of the semiconductor wafer, and the semiconductor wafer is adsorbed by a suction pad provided on the transfer arm, and the transfer arm is raised to remove the semiconductor wafer. A method for removing a semiconductor wafer from a chuck mechanism.
JP25713989A 1989-10-03 1989-10-03 Method for removing semiconductor wafer in chucking mechanism Granted JPH03120718A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP25713989A JPH03120718A (en) 1989-10-03 1989-10-03 Method for removing semiconductor wafer in chucking mechanism

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP25713989A JPH03120718A (en) 1989-10-03 1989-10-03 Method for removing semiconductor wafer in chucking mechanism

Publications (2)

Publication Number Publication Date
JPH03120718A JPH03120718A (en) 1991-05-22
JPH0582053B2 true JPH0582053B2 (en) 1993-11-17

Family

ID=17302260

Family Applications (1)

Application Number Title Priority Date Filing Date
JP25713989A Granted JPH03120718A (en) 1989-10-03 1989-10-03 Method for removing semiconductor wafer in chucking mechanism

Country Status (1)

Country Link
JP (1) JPH03120718A (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3891675B2 (en) * 1998-02-13 2007-03-14 昭和電工株式会社 Work polishing apparatus and polishing method
JP2013145776A (en) * 2012-01-13 2013-07-25 Disco Abrasive Syst Ltd Transferring method
JP6181428B2 (en) * 2013-05-24 2017-08-16 株式会社東京精密 Wafer polishing equipment
JP2016127195A (en) * 2015-01-07 2016-07-11 株式会社ディスコ Wafer grinding method
CN105179443A (en) * 2015-08-31 2015-12-23 平凉市老兵科技研发有限公司 Open type sucking disc used for thinning machine

Also Published As

Publication number Publication date
JPH03120718A (en) 1991-05-22

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