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JPH0222145B2 - - Google Patents
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JPH0222145B2 - - Google Patents

Info

Publication number
JPH0222145B2
JPH0222145B2 JP9617883A JP9617883A JPH0222145B2 JP H0222145 B2 JPH0222145 B2 JP H0222145B2 JP 9617883 A JP9617883 A JP 9617883A JP 9617883 A JP9617883 A JP 9617883A JP H0222145 B2 JPH0222145 B2 JP H0222145B2
Authority
JP
Japan
Prior art keywords
discharge
electrode
power source
voltage
power supply
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP9617883A
Other languages
Japanese (ja)
Other versions
JPS59222580A (en
Inventor
Kazuhiko Mashiro
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Anelva Corp
Original Assignee
Anelva Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Anelva Corp filed Critical Anelva Corp
Priority to JP9617883A priority Critical patent/JPS59222580A/en
Publication of JPS59222580A publication Critical patent/JPS59222580A/en
Publication of JPH0222145B2 publication Critical patent/JPH0222145B2/ja
Granted legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34Sputtering

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)

Description

【発明の詳細な説明】 従来、薄膜形成用のスパツタ装置においては、
その成膜条件から高真空雰囲気又は、コンベンシ
ヨナル型電極の使用等が要求される場合があり、
このため電極と真空容器壁(アース電位)間の高
い放電インピーダンスに起因して放電が因難とな
つたり、又は電流密度の低いことに起因してとか
く放電が不安定となりしばしば停止するなどの問
題を生じていた。
[Detailed Description of the Invention] Conventionally, in a sputtering device for forming a thin film,
Depending on the film formation conditions, a high vacuum atmosphere or the use of conventional electrodes may be required.
For this reason, problems such as high discharge impedance between the electrode and the wall of the vacuum vessel (earth potential) can cause problems with discharge, or low current density can cause the discharge to become unstable and often stop. was occurring.

この問題の解決策として従来は次の(1)、(2)、(3)
等の方法が採られている。
Conventionally, the following solutions (1), (2), and (3) have been used to solve this problem.
The following methods have been adopted.

即ち、(1)スパツタ電極とは別に放電トリガ電極
を設けこれに放電トリガー用電圧を印加する。(2)
熱フイラメントを真空質内に設けて熱電子を発生
させ、この熱電子で放電トリガをかける。(3)真空
容器内に一時的にアルゴンガス等を供給して容器
内のガス圧力を一時的に高め放電を容易に開始せ
しめ、放電後に本来の成膜条件の真空圧力に除々
に戻す。
That is, (1) a discharge trigger electrode is provided separately from the sputter electrode, and a discharge trigger voltage is applied to this electrode. (2)
A thermal filament is placed in a vacuum to generate thermoelectrons, which trigger a discharge. (3) Temporarily supply argon gas or the like into the vacuum container to temporarily increase the gas pressure inside the container to facilitate the initiation of discharge, and after discharge, gradually return the vacuum pressure to the original film forming conditions.

これらは併用されることもある。 These may be used in combination.

しかるにこれら従来の方法には次記する欠点が
ある。
However, these conventional methods have the following drawbacks.

即ち、(1)、(2)の方法においてはスパツタ電極と
は別にトリガ電極用のポートを真空質内に設置す
る必要があり、また放電停止時には放電電流の停
止を検知し、自動的にトリガをかけることができ
るような複雑な装置の併設が必要となる。(3)は真
空圧力を一時的に悪化させるものであるため、放
電開始後必要な成膜条件圧力に復帰するまでの間
にロスタイムを生じ、また放電停止が頻繁になる
ときは成膜の諸条件に変化を来すという欠点があ
る。
That is, in methods (1) and (2), it is necessary to install a port for the trigger electrode in the vacuum separately from the sputter electrode, and when the discharge stops, the stop of the discharge current is detected and the trigger is automatically triggered. It is necessary to install complex equipment that can apply Since (3) temporarily worsens the vacuum pressure, there is a loss time between the start of discharge and the time when the pressure returns to the required film-forming conditions, and if the discharge stops frequently, the film-forming conditions may be affected. It has the disadvantage of causing changes in conditions.

本発明の方式はこれらの欠点を解消するもので
ある。
The scheme of the present invention overcomes these drawbacks.

以下、この発明を実施例によつて説明する。 The present invention will be explained below with reference to Examples.

第1図において、電極7にはダイオード4を通
して主たるスパツタ専用電源2から電力が供給さ
れるがこの電極7には上記と並列に高抵抗5とダ
イオード3を通してこのスパツタ専用電源2より
も高い電圧でかつ電極7の放電開始電圧よりも若
干高い電圧を有する、トリガ用電源1が設備され
ている。このように設備した場合は、正常なスパ
ツタ放電時には電極7にはほぼ電源2の電圧に等
しい電圧が印加されるが、トリガ用電圧源1と電
極7の間には低抗5によつて大きい電圧降下を生
じ、その状態で平衡状態にある。
In FIG. 1, power is supplied to the electrode 7 from the main power source 2 exclusively for sputtering through a diode 4, but this electrode 7 is supplied with a voltage higher than the power source 2 exclusively for sputtering through a high resistance 5 and a diode 3 in parallel with the above. A trigger power source 1 having a voltage slightly higher than the discharge starting voltage of the electrode 7 is provided. When installed in this way, a voltage approximately equal to the voltage of the power supply 2 is applied to the electrode 7 during normal sputter discharge, but a large voltage is applied between the trigger voltage source 1 and the electrode 7 due to the resistor 5. It causes a voltage drop and is in equilibrium in that state.

さて何かの原因で、この正常なスパツタ放電が
停止すると、電極7の電位は瞬時にして電源1の
電位まで上昇する。従つてその高電圧にトリガさ
れて直ちに放電が開始される。その放電はひき続
いてもとの平衡状態に復する。従つて、正常かつ
安定な放電は支障なく持続されることになる。
Now, when this normal sputter discharge stops for some reason, the potential of the electrode 7 instantly rises to the potential of the power source 1. Therefore, the discharge is immediately triggered by the high voltage. The discharge subsequently returns to its original equilibrium state. Therefore, normal and stable discharge can be continued without any problem.

上記は正常放電時の放電停止の場合を述べたも
のであるが、放電開始のときも同様であつて、上
記プロセスは正常な放電の状態に達するまで自動
的に行われる。
The above describes the case of stopping the discharge during normal discharge, but the same applies when starting the discharge, and the above process is automatically carried out until a normal discharge state is reached.

第2図は本発明の別の実施例であつて、スパツ
タ装置の主たる専用スパツタ電源2に高周波電源
を用いた例である。第1図と異なるのは、この高
周波電源2より送られる電力が本発明で設備した
トリガ用電源に流入するのを防ぐためと、この電
力がトリガ電源を経由して他の装置に洩れ悪影響
を及ぼすのを防止するために、フイルタ9、8が
挿入されていることである。なお40は整合回路
である。この第2図の実施例も、その動作原理は
スパツタ電源が直流である第1図の実施例と同じ
であり、放電中に生ずる電極7のセルフバイアス
電圧と、トリガ用電圧源1の間には高抵抗5によ
る大きい電圧降下が存在し、正常スパツタ時には
この系は平衡状態にある。
FIG. 2 shows another embodiment of the present invention, in which a high frequency power source is used as the main dedicated sputtering power source 2 of the sputtering device. The difference from Fig. 1 is to prevent the power sent from this high frequency power supply 2 from flowing into the trigger power supply installed in the present invention, and also to prevent this power from leaking through the trigger power supply to other devices and having an adverse effect. In order to prevent this, filters 9 and 8 are inserted. Note that 40 is a matching circuit. The operating principle of the embodiment shown in FIG. 2 is the same as that of the embodiment shown in FIG. There is a large voltage drop due to the high resistance 5, and this system is in an equilibrium state during normal sputtering.

もし何かの原因で放電が停止する時は、電極7
のセルフバイアスが消えて電極6には直ちにトリ
ガ電源1の高電圧がそのまま印加され、再放電は
容易に開始される。
If the discharge stops for some reason, please contact electrode 7.
As soon as the self-bias disappears, the high voltage of the trigger power source 1 is directly applied to the electrode 6, and re-discharge is easily started.

この第2図の実施例の場合には、従来から問題
とされている、高周波電源スパツタ電源に使用す
る場合の放電前後における整合状態の変化が少な
くなり、整合の調整が容易になるという見逃し難
い効果も存在する。
In the case of the embodiment shown in Fig. 2, it is difficult to overlook that the change in the matching state before and after discharge when used in a high-frequency power source spatter power source, which has been a problem in the past, is reduced, and matching adjustment becomes easier. There are also effects.

本発明の方式は以上の通りであるため、上述の
説明で明らかなように、通常のスパツタ装置に簡
単にトリガー用電源と若干の回路を追加するのみ
で足り、しかもその効果は抜群である。
Since the method of the present invention is as described above, as is clear from the above explanation, it is sufficient to simply add a trigger power source and some circuits to a normal sputtering device, and the effect is outstanding.

極めて安定な放電を継続的に維持することが可
能となる。従つて本発明の方式で製造した薄膜製
品は、その品質が安定し、かつ歩留が向上する
等々多くの利点を生むものである。
It becomes possible to continuously maintain extremely stable discharge. Therefore, the thin film products manufactured by the method of the present invention have many advantages such as stable quality and improved yield.

本発明の工業的価値は極めて高い。 The industrial value of the present invention is extremely high.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は、本発明の方式の実施例であつて専用
スパツタ電源として直流電源を採用した場合の模
式図。第2図は他の実施例であつてスパツタ電源
として高周波電源を用いた場合の模式図である。 1……トリガ電源、2……専用スパツタ電源、
3,4……ダイオード、5……高抵抗、6……電
極用シールド板、7……スパツタ電極、8と9…
…低域フイルタ、10……真空容器、11……サ
ブストレートホルダ、40……インピーダンスの
整合回路。
FIG. 1 is a schematic diagram of an embodiment of the method of the present invention in which a DC power source is used as a dedicated sputter power source. FIG. 2 is a schematic diagram of another embodiment in which a high frequency power source is used as the sputter power source. 1...Trigger power supply, 2...Dedicated spatsuta power supply,
3, 4... Diode, 5... High resistance, 6... Electrode shield plate, 7... Sputter electrode, 8 and 9...
...Low-pass filter, 10...Vacuum container, 11...Substrate holder, 40...Impedance matching circuit.

Claims (1)

【特許請求の範囲】[Claims] 1 薄膜を形成するに用いるスパツタ装置におい
て、その主となるスパツタ専用電源のほかにこれ
に並列に該専用電源の出力インピーダンスよりも
高い出力インピーダンス及び高い電圧を有する放
電トリガ用高圧電源を配置したことを特徴とする
スパツタ装置の放電トリガ方式。
1. In a sputtering device used to form a thin film, in addition to the main power supply exclusively for sputtering, a high-voltage power supply for a discharge trigger having an output impedance and voltage higher than the output impedance of the dedicated power supply is arranged in parallel. A discharge trigger method for sputtering equipment featuring:
JP9617883A 1983-05-31 1983-05-31 Discharge triggering method of sputtering device Granted JPS59222580A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9617883A JPS59222580A (en) 1983-05-31 1983-05-31 Discharge triggering method of sputtering device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9617883A JPS59222580A (en) 1983-05-31 1983-05-31 Discharge triggering method of sputtering device

Publications (2)

Publication Number Publication Date
JPS59222580A JPS59222580A (en) 1984-12-14
JPH0222145B2 true JPH0222145B2 (en) 1990-05-17

Family

ID=14158068

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9617883A Granted JPS59222580A (en) 1983-05-31 1983-05-31 Discharge triggering method of sputtering device

Country Status (1)

Country Link
JP (1) JPS59222580A (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62142763A (en) * 1985-12-18 1987-06-26 Hitachi Ltd sputtering device
US6190512B1 (en) * 1993-09-07 2001-02-20 Tokyo Electron Arizona Inc. Soft plasma ignition in plasma processing chambers

Also Published As

Publication number Publication date
JPS59222580A (en) 1984-12-14

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